CN106098673B - One kind is used for IC chip self-distruction structure - Google Patents
One kind is used for IC chip self-distruction structure Download PDFInfo
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- CN106098673B CN106098673B CN201610427727.7A CN201610427727A CN106098673B CN 106098673 B CN106098673 B CN 106098673B CN 201610427727 A CN201610427727 A CN 201610427727A CN 106098673 B CN106098673 B CN 106098673B
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Abstract
The disclosure of the invention is a kind of for IC chip self-distruction structure, and structure includes：Chip, be set to chip back or the positive straight slot of detour, the metal being arranged in straight slot, straight slot head and the tail both ends metal on be provided with electrode, the straight slot spreads all over the entire non-active area of chip front side or the back side, the total metal Young's modulus of the straight slot is more than 70GPa, coefficient of thermal expansion is 5 times of silicon or more, it is characterised in that straight slot both sides are periodically provided with the V-type wedge angle of outwardly convex；The V-type wedge angle of adjacent two sections of slot outwardly convexs in straight slot back haul, the top of the horn are opposite and misaligned.It is simple with structure and technique, the advantages of safety, stability higher, stress concentration.
Description
Technical field
The invention belongs to information security fields, refer to a kind of self-destructed method and structure of IC chip.
Background technology
The continuous development of microelectric technique allows to enrich, the information of magnanimity is cured in one piece of small chip, and
The value of information is often much larger than the value of chip piece.The miniaturization of electronic product, portability also tend to be easier them
It loses.The equipment such as personal mobile phone, USB flash disk are often stored with privacy information, once shadow may be caused to the life of oneself by losing
It rings；One piece of chip for possessing core technology is once fallen into competitor's hand in enterprise, and competitor is by the way that be reversely easy for can be with
The core technology of related chip is stolen, enterprise may be allowed to get into trouble；The classified information of the departments such as government, enterprise is generally all
It is stored in hard disk, FLASH memory, once immeasurable loss will be caused by losing；On battlefield, our electronic equipment
It falls into enemy's hand and is likely to cause the relevant information of battle plan to reveal, cause the harm that can not be made up.In order to avoid core
Related confidential information in piece is fallen into his human hand, needs to introduce self-destruction technology in the chips.
In order to which chip is allowed thoroughly to destroy to impede a future disaster, current self-destruction method has chemical attack, the agent containing energy to cause explosion
Make chip fragmentation etc..Chemical corrosion method needs specific container storage chemical reagent, this can increase the volume of self-desttruction equipment,
The difficulty for manufacturing the device is increased, on the other hand these chemical reagent do not ensure that the stabilization in for a long time chemically, and
And once leakage may do harm to huamn body for chemical reagent.Containing can agent be generally adopted by thermite, porous silicon (and oxidation
Agent mixes) etc..Preparing thermite needs, by nano oxygen agent and nanometer aluminium powder long agitation, to be sufficiently mixed them.Meanwhile
In order to reduce triggering temperature, generally also need to add in the inflammable and explosive substances such as solid-state gasoline, sulphur powder in thermite.Later by aluminothermy
Agent titration is spun on the specified region of chip.Make the agent containing energy with porous silicon and equally exist problems, it is appropriate in order to obtain
Temperature is triggered, needs the porous silicon for preparing pore size, porosity is met the requirements.In addition oxidant is penetrated into porous silicon,
It needs after multiple titration oxidant, air-dry, then titrate, air-dry such step.Compare labor intensive in manufacturing process, imitate
Rate is also very low.In addition, above-mentioned thermite, oxidant belong to inflammable and explosive substances, explosion can be caused at high temperature, and oxidant is such as
NaClO4、CdClO4It is also possible to explode when being clashed.
The premise of chip self-destroying is the normal work that self-desttruction equipment does not influence chip, does not influence the manufacturing process of chip,
When being not received by self-destruction signal can never self-destruction more will not there are security risks to the person.And self-destruction method mentioned above
Be difficult to avoid that there are security risk, in manufacture and traditional silicon technology there is also relatively large deviations.In addition it is very easy to by the external world
The influence of environmental change, for example, temperature, humidity variation be easy to cause chemical reagent and containing can agent chemical property change, in core
Piece, which falls or has, may also can cause the self-destruction of the agent containing energy when very high acceleration.Therefore it needs a kind of simultaneous with silicon technology
Hold, do not influence chip normal work, be affected by the external environment smaller chip self-destroying method.
The theoretical critical fire area fracture strength of body silicon is about 4-7GPa, but Si is being a kind of fragile material less than 700 DEG C, Poisson
Than for v=0.27, having risk of breakage under 4% strain.Moreover, usually there are various defects or micro-crack in material, this
It can substantially reduce the failure condition of body silicon, small bending (200-700MPa) can cause silicon chip to be broken.Because monocrystalline silicon
{ 111 } face interplanar distance it is maximum, atom key density is minimum, is its cleavage surface, body silicon along cleavage surface its crackle extension than
It is much easier along other faces.For the These characteristics of monocrystalline silicon, region of stress concentration can be artificially introduced on chip, rationally
Using cleavage surface, make the fragmentation region of chip controllable while silicon chip fracture difficulty is reduced.
Invention content
The present invention is difficult for manufacturing present in background technology chips destruction technology, and reliability, safety are low etc. asks
Topic, using silicon chip in brittleness, easy fracture the characteristics of, it is proposed that deep trouth is etched on silicon chip, in slot fill special metal or
Thermal expansion agent is filled after first filling metal, using the coefficient of thermal expansion of silicon significantly less than this of the special metal and thermal expansion agent
Feature, metal and swelling agent thermal expansion immediately while so that the metal electrification is generated Joule heat rapidly, and the thermal expansion of silicon chip can be with
It ignores, thus larger stress and displacement is introduced into silicon chip, be broken silicon chip.Otherwise for monocrystalline silicon along cleavage
The characteristics of face is more easily broken off introduces region of stress concentration in cleavage surface direction, can reduce the difficulty of silicon chip fracture.
The technical scheme is that a kind of for IC chip self-distruction structure, which includes：Chip is set to
Chip back or the positive straight slot of detour, the metal being arranged in straight slot, straight slot head and the tail both ends metal on be provided with electrode, institute
It states straight slot and spreads all over the entire non-active area of chip front side or the back side, the total metal Young's modulus of the straight slot is more than 70GPa, and heat is swollen
Swollen coefficient is 5 times of silicon or more, it is characterised in that straight slot both sides are periodically provided with the V-type wedge angle of outwardly convex；Straight slot detour
The V-type wedge angle of adjacent two sections of slot outwardly convexs in the process, the top of the horn are opposite and misaligned.
Further, in the straight slot back haul narrow depth is provided between the V-type wedge angle of adjacent two sections of slot outwardly convexs
Slot, the side wall of the narrow deep trouth are parallel with the cleavage surface of chip.
Further, the straight slot bottom of the detour sets thermal expansion agent first, is further filled with metal.
Further, the V-type wedge angle angle is 90 °~120 °, adjacent two sections of slot outwardly convexs in straight slot back haul
V-type wedge angle distance be less than or equal to 25 μm.
Further, it is described to be used for IC chip self-distruction structure metal electrode load pulses in both ends during self-destruction
Formula voltage.
Beneficial effects of the present invention are：
1st, the present invention can make filling metal be warming up to 200 to 300 degrees Celsius in a short time, in the temperature range,
Metal still has higher Young's modulus, and volume expansion amount is also larger, and silicon chip is made to produce larger amount of bow, to silicon
Considerable stress is introduced in piece.
2nd, equally it is to be broken chip makes physical, the present invention is compared with the chip containing energy, and structure and technique are simple, safety
Property, stability higher.
3rd, sharp corner can generate stress concentration in chip, and the shape of wedge angle can generate stress concentration effect significantly
It influences.
4th, wedge angle can make the structure of wedge angle stress to be further superimposed on the basis of stress concentration, make to take the lead in producing at this
Raw crackle, is conducive to chip fracture.
5th, stress raiser is made to be located in the cleavage surface of monocrystalline silicon, is conducive to fracture and the crack propagation of silicon chip.
6th, diagonally processing can essentially control local location stress at the angle of the introducing of V-arrangement wedge angle and wedge angle and wedge angle
The position that size and maximum stress occur can further control chip destroyed area so that destroying number of tiles.
Description of the drawings
Fig. 1 is that substrate is<110>During crystal orientation, the angle situation of cleavage surface and silicon chip surface.
Fig. 2 is that substrate is<100>During crystal orientation, the angle situation of cleavage surface and silicon chip surface.
Fig. 3 is the front view of example IV, it is characterized in that on the basis of embodiment one, increases V-arrangement point in deep trouth both sides
Angle.
Fig. 4 is the sectional view of embodiment one, example IV, embodiment five, and packing material is metallic zinc.
Fig. 5 is the front view of embodiment one, embodiment two.
Fig. 6 is the sectional view of embodiment two, and packing material is metallic zinc and microspheres.
Fig. 7 is the sectional view of embodiment three, and the side of bracket groove 5 is { 111 } crystal orientation.The structure is on the basis of embodiment one
On etched narrow deep trouth, the purpose is to crackle is made to be extended along cleavage surface.It is using this kind of structural requirement silicon chip<110>Crystal orientation.
Fig. 8 is the rear elevation view of embodiment three, it is characterized in that on the basis of embodiment one, narrow depth is etched on silicon chip
Slot, the side for making narrow deep trouth are the cleavage surface of silicon chip.
Stress envelopes of the Fig. 9 for a points in Fig. 3 to b points.
Figure 10 is the rear elevation view of embodiment five, it is characterized in that in the figure for changing filling metal, makes silicon chip in deep trouth
Corner generate stress concentration point.
Figure 11 is the sectional view of embodiment six, and packing material is metallic zinc, and self-distruction structure is with chip operation region same
On one side.
Wherein, metal 1, chip 2, electrode 3, thermal expansion agent 4, narrow deep trouth 5, chip operation area 6 are filled, V-arrangement wedge angle 7 turns
Angle 8.
Specific embodiment
As optional technical solution, metal is further filled with after can first inserting thermal expansion agent before metal is filled.It is certain
Material phase transformation (solid-state, liquid, gaseous state mutually convert or solid-state first order phase change), these material phase transformations after certain temperature is reached
The variation of volume can be generated afterwards.Microspheres (Thermally Expandable Microspheres) are that a clock is extremely micro-
Small spheric granules, the external thermoplasticity sphere good for air-tightness, enclosed inside low boiling point hydrocarbon, with magnesium hydroxide
(Mg (OH) 2) is dispersant, and acrylonitrile (AN) and methyl methacrylate (MMA) are main polymerized monomer, azo-bis-isobutyl cyanide
(AIBN) it is initiator, trimethylolpropane trimethacrylate (TMPTA) is crosslinking agent, is prepared using suspension polymerization.Heat is swollen
Swollen microballoon is held essentially constant in the front volume for reaching its critical-temperature, mutually becomes gas higher than the hydro carbons in sphere after critical-temperature
State, volume tens times of instantaneous expansion of meeting, the plastic material outside sphere can maintain the form after volume change.In addition it is hot
The critical-temperature of expandable microspheres can well be controlled by preparation process.The metal of filling makes thermal expansion micro- for the heating that is powered
Ball reaches its critical-temperature.
As optional technical solution, added voltage can be impulse type voltage on metal, and this aspect can be to avoid
Metal because local location temperature it is excessively high fusing lead to open circuit, another aspect impulse type voltage can introduce pulsating stress, because
And crack Propagation can be generated.
Embodiment one
The section of the present embodiment is as shown in figure 4, rear elevation view is as shown in Figure 5.Including metallic zinc 1, silicon chip 2, electrode 3,
Chip operation area 6.In the present embodiment, front side of silicon wafer is the working region of chip, and the back side is the apparatus for destroying of chip.Overleaf carve
It loses deep trouth, fills metallic zinc in slot, finally electrode is drawn out in the control circuit of chip.Die size is in the present embodiment
1cm × 1cm × 350 μm (350 μm be thinned for conventional die after thickness, similarly hereinafter), the width of slot is 100 μm, and thickness is 75 μm,
The distance between slot and slot are 100 μm.When reaching trigger condition, control circuit adds voltage to electrode.In order to avoid filling
Metal local location because high temperature fuse, added voltage can be impulse type voltage.When electrode voltage is 3V, metal
Zinc generates Joule heat and thermal expansion, which was warming up to 300 degrees Celsius within 15 second time, at this time the maximum deflection of silicon chip
It is 240 μm to measure, and the stress of silicon is 400MPa below metal, and the edge of the local location such as metal of silicon and the stress of sharp corner silicon are about
For 1GPa.
Embodiment two
The sectional view of the present embodiment is as shown in fig. 6, rear elevation view is as shown in Figure 5.Including metallic copper 1, silicon chip 2, electrode
3rd, microspheres 4, chip operation area 6.Deep trouth equally is etched in chip back, microspheres is then first filled, refills
Electrode is finally drawn out in control circuit by metallic copper.In the present embodiment die size be 1cm × 1cm × 350 μm, groove depth 100
μm, 100 μm wide, 100 μm of separation, 50 μm of microspheres thickness, 50 μm of metal copper thickness.After meeting trigger condition, metal
Copper, which is powered, generates Joule heat, and when electrode institute making alive is 3V, temperature can reach the stagnation temperature of microspheres in 10 seconds
Degree, microspheres volume can expand rapidly tens times at this time, can destroy chip makes physical.
Embodiment three
The sectional view of the present embodiment is as shown in fig. 7, rear elevation view is as shown in Figure 8.Including metallic aluminium 1, silicon chip 2, electrode
3rd, narrow deep trouth 5, chip operation area 6.The present embodiment equally first etches deep trouth, and metallic aluminium is filled in slot, then etches narrow deep trouth
5, extraction electrode.Die size is 1cm × 1cm × 350 μm in the present embodiment, and the width of metal strip is 100 μm, and thickness is 75 μ
The distance between m, metal strip is 100 μm.When silicon chip crystal orientation is<110>When, adjustment etching direction can make the section of narrow deep trouth 5
For { 111 } face.When electrode voltage is 3V, temperature can rise to 300 DEG C in 10 seconds, and silicon chip is curved because of metallic aluminium thermal expansion stress
Song, amount of bow is up to 240um, and stress reaches 400MPa in silicon chip.Stress concentration at deep trouth, and groove depth direction and the side of cleavage surface
To identical, crackle can in this way along cleavage surface extended, greatly reduce the difficulty of silicon chip fracture.
Example IV
The sectional view of the present embodiment is as shown in figure 4, rear elevation view is as shown in Figure 3.Including metallic zinc 1, silicon chip 2, electrode
3rd, chip operation area 6.The present embodiment increases V-arrangement wedge angle on the basis of embodiment one on the both sides of the slot of etching.This implementation
The size of silicon chip is 1cm × 1cm × 350 μm in example, and the width of slot is 100 μm, and thickness is 75 μm, and the distance between slot and slot are
100 μm, the angle of the V-arrangement wedge angle at groove edge is 90 °, and the distance of wedge angle and wedge angle is 20um.Receive self-destruction signal, electrode
The rapid thermal expansion of metallic zinc, stress is introduced into chip after energization, and stress concentration, wedge angle and wedge angle can be generated in V-arrangement sharp corner
It is opposite to make Stress superposition, thus the stress of pointed tips is much larger than the stress of other positions in chip, it can take the lead in generating at this
Crackle.When electrode institute making alive is 3V, self-desttruction equipment was warming up to 300 DEG C in 15 seconds, and metallic zinc is because thermal expansion is into chip
Introduce stress.Fig. 9 is the stress envelope that a points arrive b points in Fig. 3, and the stress of V-arrangement sharp corner is 2.8GPa in silicon chip, and in silicon
The stress in other regions is less than 500MPa.Therefore on the one hand can significantly increase in this way the stress of local location so as to
Silicon chip fracture difficulty is reduced, on the other hand can control the region of fracture of silicon chip.
Embodiment five
The sectional view of the present embodiment is as shown in figure 4, the figure of filling metal is as shown in Figure 10.Including metallic zinc 1, silicon chip 2,
Electrode 3, chip operation area 6.The present embodiment changes the shape of the slot of etching on the basis of embodiment one.In the present embodiment,
The size of silicon chip is 1cm × 1cm × 350 μm, and the width of metal strip is 100 μm, and thickness is 75 μm, and the distance between metal strip is
100μm.Metallic zinc can be made identical with the swell increment in y directions in x directions using this figure, thus make metallic zinc around the corner
The stress in the x directions of (in Figure 10 shown in 8) is equal to the stress in y directions, and the combined stress of the point is maximum in this case.Electrode connects
Larger electric current can be generated behind energization source in metallic zinc, metal is caused to be brought rapidly up thermal expansion.When electrode voltage is 3V, at 15 seconds
300 DEG C are inside warming up to, and the stress of corner's silicon chip is apparently higher than other positions in silicon chip, crackle can germinate at this.
Embodiment six
The sectional view of the present embodiment is as shown in figure 11, and self-desttruction equipment region front view is as shown in Figure 3.Including metallic zinc, silicon
Piece 2, electrode 3, chip operation area 6, V-arrangement wedge angle 7.Self-distruction structure is in the back of the body in chip operation area in embodiment discussed above
Face, in the present embodiment, self-distruction structure and chip operation region need self-destructed region phase in the same face, self-distruction structure and chip
It is adjacent.Deep trouth is etched beside the region, deposits metallic zinc, extraction electrode is completed to interconnect with control circuit.The present embodiment bracket groove
Width and depth can adjust according to the size of silicon chip.For the silicon chip of 1cm × 1cm × 350 μm, depth is 100 μm, thick
It is 75 μm to spend, and the distance between slot and slot are 100 μm.After triggering, metal electrification generates Joule heat and thermal expansion.Electrode voltage is
During 3V, self-distruction structure was warming up to 300 degrees Celsius in 15 seconds.Because there are many grooves above self-destruction region, much should introduce
Power centrostigma, silicon chip is in brittleness at such a temperature, and the amount of bow of very little can make chip fracture.Crack propagation is to chip operation area
Domain, chip will can not work, and complete self-destruction.
The present invention introduces stress by certain thermal expansion metals, by etching narrow deep trouth, the V using metal along cleavage surface
Shape wedge angle generates the fracture difficulty of the methods of stress concentration reduction silicon chip, and chip can be made to be cracked first in stress raiser
And then make chip fracture.The present invention reaches the methods of chip cutting, filling swelling agent pair using the metal of different graphic is filled
The controllable destruction of chip has and destroys the features such as earthquake intensity is low, and stability is high.
Claims (5)
1. one kind includes for IC chip self-distruction structure, the structure：Chip is set to chip back or positive detour
Straight slot, the metal being arranged in straight slot, straight slot head and the tail both ends metal on be provided with electrode, the straight slot spread all over chip front side or
The entire non-active area in the back side, the metal Young's modulus of the straight slot are more than 70GPa, and coefficient of thermal expansion is 5 times of silicon or more,
It is characterized in that straight slot both sides are periodically provided with the V-type wedge angle of outwardly convex；Adjacent two sections of slot convexes in straight slot back haul
The V-type wedge angle risen, the top of the horn are opposite and misaligned.
2. one kind as described in claim says 1 is used for IC chip self-distruction structure, it is characterised in that the straight slot detour
Narrow deep trouth is provided between the V-type wedge angle of adjacent two sections of slot outwardly convexs in the process, the side wall of the narrow deep trouth and the cleavage of chip
Face is parallel.
3. one kind as described in claim says 1 is used for IC chip self-distruction structure, it is characterised in that the detour is led to
Trench bottom sets thermal expansion agent first, is further filled with metal.
4. one kind as described in claim says 1 is used for IC chip self-distruction structure, it is characterised in that the V-type wedge angle folder
Angle is 90 °~120 °, and the V-type wedge angle distance of adjacent two sections of slot outwardly convexs is less than or equal to 25 μm in straight slot back haul.
5. one kind as described in claim says 1 is used for IC chip self-distruction structure, it is characterised in that described to be used to integrate
Circuit chip self-distruction structure both ends metal electrode load pulses formula voltage during self-destruction.
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| CN108213036A (en) * | 2017-12-04 | 2018-06-29 | 中国电子科技集团公司第三十研究所 | A kind of circuit board emergent physical apparatus for destroying and implementation method |
| WO2020146994A1 (en) * | 2019-01-15 | 2020-07-23 | 深圳市汇顶科技股份有限公司 | Chip and manufacturing method therefor |
| CN110010554B (en) * | 2019-03-26 | 2020-10-20 | 电子科技大学 | Physical self-destruction device packaging structure based on water-absorbent resin |
| EP3795855A1 (en) * | 2019-09-20 | 2021-03-24 | Patek Philippe SA Genève | Method for producing a timepiece spring from monocrystalline material and timepiece spring obtained by said method |
| GB2589131A (en) * | 2019-11-22 | 2021-05-26 | Continental Automotive Systems Srl | Circuit board with self-destruction mechanism |
| CN111143901B (en) * | 2019-12-31 | 2022-02-15 | 湖南博远翔电子科技有限公司 | Dual self-destruction device of chip |
| CN112213969B (en) * | 2020-06-01 | 2024-05-31 | 广州云利数码科技有限公司 | Intelligent auxiliary law enforcement management auxiliary system based on military Internet of things |
| CN112786539B (en) * | 2020-11-19 | 2023-05-09 | 四川大学 | Two-stage excitation self-destruction chip based on array pore canal and preparation method thereof |
| CN114347282A (en) * | 2022-01-18 | 2022-04-15 | 常州时创能源股份有限公司 | Silicon wafer preparation method |
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| US7884625B2 (en) * | 2008-07-29 | 2011-02-08 | International Business Machines Corporation | Capacitance structures for defeating microchip tampering |
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| CN103378056A (en) * | 2012-04-12 | 2013-10-30 | 北京理工大学 | Integrated circuit chip-level self-destructive method based on MEMS metal bridge transducer element structure and structure thereof |
| CN104867885A (en) * | 2015-04-17 | 2015-08-26 | 丁旭冉 | Self-destruct nonvolatile memory chip and preparation method thereof |
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