CN114347282A - Silicon wafer preparation method - Google Patents
Silicon wafer preparation method Download PDFInfo
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- CN114347282A CN114347282A CN202210055421.9A CN202210055421A CN114347282A CN 114347282 A CN114347282 A CN 114347282A CN 202210055421 A CN202210055421 A CN 202210055421A CN 114347282 A CN114347282 A CN 114347282A
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- cutting
- silicon wafer
- silicon
- groove
- reference groove
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 67
- 239000010703 silicon Substances 0.000 title claims abstract description 66
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 238000005520 cutting process Methods 0.000 claims abstract description 67
- 239000002210 silicon-based material Substances 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000003486 chemical etching Methods 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims 1
- 239000000428 dust Substances 0.000 abstract description 3
- 239000002351 wastewater Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 30
- 238000005516 engineering process Methods 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a preparation method of a silicon wafer, which comprises the steps of taking a silicon material with an end face crystal orientation of +/-3 degrees of a target crystal orientation, cutting one side face of the silicon material by adopting a cutter, and cutting the silicon material into the silicon wafer; taking the end face as a datum plane and the side face as a cutting plane; each cutting comprises the following steps: slotting on the cutting surface, and taking the slot as a reference slot which is parallel to the reference surface; and embedding the cutting edge of the cutter into the reference groove, wherein the cutting edge is parallel to the reference surface, and applying certain pressure to the reference groove through the cutting edge to naturally cleave and break the silicon material at the reference groove. The invention can realize the preparation of the silicon chip under the condition that the silicon material is nearly lossless; the silicon wafer yield can be improved, and the silicon material cost of a single silicon wafer can be reduced. The invention solves the problems of large silicon loss, large noise, much dust, much waste water and the like in the current silicon wafer cutting process, and realizes the low-cost green processing of the silicon wafer.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to a silicon wafer preparation method.
Background
In the processing of a monocrystalline silicon wafer for photovoltaic use, the silicon wafer is obtained by cutting a monocrystalline silicon rod. With the continuous progress of the slicing technology, the multi-line cutting gradually replaces the early inner circle and outer circle slicing technology to become the mainstream of the silicon wafer cutting field, and the silicon at the position of a knife gap is cut into silicon powder or silicon scraps in the cutting process. The same point of the cutting methods is that a silicon block is cut and separated into silicon wafers through a cutter with certain thickness, and the thickness of the cutter is large in the process, and the thickness of silicon material loss is large in the cutting process. In the multi-wire cutting technology, in order to further reduce cutting loss and improve cutting efficiency, the cutting mode and the steel wire type are changed greatly, the mortar wire cutting is used initially, the cutting speed is low, the steel wire diameter is large (such as more than 110 um), and the loss of silicon materials in the cutting process is large. Later, the technology was gradually upgraded to diamond wire cutting technology with faster cutting speed and less silicon loss. Nevertheless, the silicon material loss accounts for a large proportion of the silicon wafer cost, and taking the typical 180um silicon wafer cut by a diamond wire with the diameter of 40-50 um in the current mass production as an example, the silicon material loss of about 1 silicon wafer is about for every 3 silicon wafers. In addition, in the cutting process, besides silicon material loss caused by abrasion, a large amount of cutting waste water, dust, noise and other non-environment-friendly factors are generated.
Disclosure of Invention
The invention aims to provide a preparation method of a silicon wafer, which comprises the steps of taking a silicon material with an end face crystal orientation of +/-3 degrees of a target crystal orientation, cutting one side face of the silicon material by adopting a cutter, and cutting the silicon material into the silicon wafer; taking the end face as a datum plane, taking the side face as a cutting plane, and enabling the cutting plane to be vertical to the datum plane;
each cutting comprises the following steps: slotting on the cutting surface, and taking the slot as a reference slot which is parallel to the reference surface; and embedding the cutting edge of the cutter into the reference groove, wherein the cutting edge is parallel to the reference surface, and applying certain pressure to the reference groove through the cutting edge to naturally cleave and break the silicon material at the reference groove.
Preferably, the target crystal orientation is <100>, <110>, or <111 >.
Preferably, the thickness of the cut silicon wafer is controlled by adjusting the slotting distance of two times of cutting.
Preferably, the cutting surface is grooved by mechanical grinding, spark cutting, laser cutting, chemical etching, gas phase etching or plasma etching.
Preferably, the reference groove is a through groove; or the reference groove is formed at the side line of the cutting surface.
Preferably, the reference groove is a V-shaped groove.
Preferably, the bottom of the groove body of the reference groove is a sharp angle or an R angle.
Preferably, the depth of the groove of the reference groove is 0.1-10 mm.
More preferably, the depth of the reference groove is 0.1-1.5 mm.
Preferably, the groove angle of the reference groove is 5 ° to 50 °.
Preferably, the edge angle of the edge is not greater than the groove angle of the reference groove.
Preferably, the thickness of the blade is not less than the opening width at the height of the reference groove depth 1/4-3/4.
Preferably, the length of the blade is not less than the length of the reference groove.
The invention has the advantages and beneficial effects that: the silicon wafer preparation method is provided, slicing is completed by naturally cleaving and breaking silicon materials, and the preparation of the silicon wafer can be realized under the condition that the silicon materials are almost lossless; the silicon wafer yield can be improved, and the silicon material cost of a single silicon wafer can be reduced.
The invention is a method for forming silicon wafer by cracking silicon atom surface, which can complete the nondestructive cutting of silicon wafer with (111), (110), (100) and other crystal surface directions.
The crystallographic directions <111>, <110>, <100> and so on, which have interplanar spacings of 2.35 a, 1.92 a, 1.36 a, respectively, are the most important crystal directions in silicon crystal applications, the larger the interplanar spacings the smaller their interplanar bonding forces the easier it is to break atomic bonds from the surface, from which it follows that the energy required to break the "silicon-silicon" bonds between (111) surfaces is the lowest, the (100) highest.
Therefore, silicon wafers with the crystal face directions of (111), (110) and (100) can be respectively formed by breaking silicon-silicon bonds among silicon crystal faces, and the silicon wafers formed by breaking the silicon-silicon bonds have bright and flat surfaces, almost no silicon material is lost in the processing process, and lossless cutting can be really realized.
The invention solves the problems of large silicon loss, large noise, much dust, much waste water and the like in the current silicon wafer cutting process, and realizes the low-cost green processing of the silicon wafer. By adopting the method for cutting the silicon wafer, the number of the silicon materials (such as silicon rods, silicon blocks and the like) in unit weight is increased by more than 30%, the single cost of the silicon wafer is greatly reduced, the average carbon footprint of the single silicon wafer is also greatly reduced, and the environmental pollution factors in the silicon wafer cutting process are also greatly reduced.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The invention provides a silicon wafer preparation method, which comprises the steps of taking a silicon material (such as a cuboid silicon rod, a cuboid silicon block and the like) with one end face crystal orientation being +/-3 degrees of a target crystal orientation, cutting one side face of the silicon material by adopting a cutter, and cutting the silicon material into a silicon wafer;
the target crystal orientation may be <100>, <110>, or <111>, or may be other crystal orientations, which are not necessarily listed herein;
taking the end face as a datum plane, taking the side face as a cutting plane, and enabling the cutting plane to be vertical to the datum plane;
each cutting comprises the following steps:
1) slotting on a cutting surface by adopting processes of mechanical grinding, electric spark cutting, laser cutting, chemical corrosion, gas phase etching or plasma etching and the like, and taking the slot as a reference slot which is parallel to a reference surface;
specifically, the method comprises the following steps:
the reference groove is a through groove; or the reference groove is formed at the side line of the cutting surface;
the reference groove is a V-shaped groove,
the bottom of the reference groove is a sharp angle or an R angle,
the depth of the reference groove is 0.1-1.5 mm,
the groove angle of the reference groove is 5-50 degrees;
and the cutting edge is matched with the reference groove:
the edge angle of the blade is not more than the groove angle of the reference groove (the edge angle is less than or equal to the groove angle),
the thickness of the blade is not less than the opening width at the height of the reference groove depth 1/4-3/4 (the thickness of the blade is equivalent to the opening width at the height of the reference groove depth 1/4-3/4),
the length of the blade is not less than that of the reference groove;
2) the cutting edge of the cutter is embedded into the reference groove, the cutting edge is parallel to the reference surface, and a certain pressure (applied perpendicular to the reference surface) is applied to the bottom of the groove body of the reference groove through the cutting edge, so that the silicon material is naturally cleaved and disconnected at the reference groove (the silicon material can crack along the bottom of the groove body of the reference groove and naturally extend to form a flat and bright fracture surface).
The silicon material can be a rectangular silicon rod, a rectangular silicon block and the like, the reference surface of the silicon material can be the end surface of one end of the silicon material in the length direction, the silicon material is cut for multiple times in the length direction of the silicon material (after single cutting is completed, the next slotting is performed at a certain distance in the length direction of the silicon material), and the thickness of the cut silicon wafer can be controlled by adjusting the slotting interval of the two successive times of cutting.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (12)
1. The preparation method of the silicon chip is characterized in that a silicon material with one end face crystal orientation as a target crystal orientation +/-3 degrees is taken, a cutter is adopted to cut one side face of the silicon material, and the silicon material is cut into the silicon chip; taking the end face as a datum plane, taking the side face as a cutting plane, and enabling the cutting plane to be vertical to the datum plane;
each cutting comprises the following steps: slotting on the cutting surface, and taking the slot as a reference slot which is parallel to the reference surface; and embedding the cutting edge of the cutter into the reference groove, wherein the cutting edge is parallel to the reference surface, and applying certain pressure to the reference groove through the cutting edge to naturally cleave and break the silicon material at the reference groove.
2. The method for preparing a silicon wafer according to claim 1, wherein the target crystal orientation is <100>, <110>, or <111 >.
3. The method for preparing a silicon wafer according to claim 1, wherein the thickness of the cut silicon wafer is controlled by adjusting the pitch of the grooves cut twice in succession.
4. The method for preparing a silicon wafer according to claim 1, wherein a groove is formed on the cut surface by a mechanical grinding, spark cutting, laser cutting, chemical etching, vapor phase etching or plasma etching process.
5. The method for producing a silicon wafer according to claim 1, wherein the reference grooves are through grooves; or the reference groove is formed at the side line of the cutting surface.
6. The method for preparing a silicon wafer according to claim 5, wherein the reference groove is a V-shaped groove.
7. The silicon wafer preparation method according to claim 6, wherein the bottom of the reference groove is a sharp angle or an R angle.
8. The method for preparing a silicon wafer according to claim 7, wherein the reference groove has a groove depth of 0.1 to 10 mm.
9. The method for producing a silicon wafer according to claim 8, wherein the reference groove has a groove angle of 5 ° to 50 °.
10. The silicon wafer production method according to claim 9, wherein the edge angle of the blade is not greater than the groove angle of the reference groove.
11. The method for producing a silicon wafer according to claim 10, wherein the thickness of the blade is not less than the width of the opening at the height of the reference groove depth 1/4 to 3/4.
12. The silicon wafer production method according to claim 11, wherein the length of the blade is not less than the length of the reference groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210055421.9A CN114347282A (en) | 2022-01-18 | 2022-01-18 | Silicon wafer preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210055421.9A CN114347282A (en) | 2022-01-18 | 2022-01-18 | Silicon wafer preparation method |
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| CN114347282A true CN114347282A (en) | 2022-04-15 |
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| CN202210055421.9A Pending CN114347282A (en) | 2022-01-18 | 2022-01-18 | Silicon wafer preparation method |
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| CN109968136A (en) * | 2019-04-25 | 2019-07-05 | 内蒙古中环协鑫光伏材料有限公司 | A kind of polygon silicon single crystal rod and its processing method |
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