CN106094445B - Method for manufacturing nano-scale metal structure with large height-width ratio - Google Patents
Method for manufacturing nano-scale metal structure with large height-width ratio Download PDFInfo
- Publication number
- CN106094445B CN106094445B CN201610407163.0A CN201610407163A CN106094445B CN 106094445 B CN106094445 B CN 106094445B CN 201610407163 A CN201610407163 A CN 201610407163A CN 106094445 B CN106094445 B CN 106094445B
- Authority
- CN
- China
- Prior art keywords
- metal
- photoresist
- monocrystalline
- metal structure
- monocrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 48
- 239000002184 metal Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 18
- 239000007769 metal material Substances 0.000 claims abstract description 6
- 238000005260 corrosion Methods 0.000 claims abstract description 5
- 230000007797 corrosion Effects 0.000 claims abstract description 5
- 238000010894 electron beam technology Methods 0.000 claims abstract description 5
- 238000001039 wet etching Methods 0.000 claims abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 25
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 8
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000009713 electroplating Methods 0.000 abstract 3
- 239000011259 mixed solution Substances 0.000 abstract 2
- 230000003197 catalytic effect Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000002791 soaking Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2035—Exposure; Apparatus therefor simultaneous coating and exposure; using a belt mask, e.g. endless
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
The invention provides a method for manufacturing a nano metal structure with a large height-width ratio, which comprises the following steps: evaporating a metal material using an electron beam to form a metal thin film pattern on a single crystal silicon substrate having specific parameters; soaking the monocrystalline silicon substrate with the metal film pattern on the surface in the mixed solution for catalytic corrosion for a period of time to form a deep silicon groove with a large height-to-width ratio on the monocrystalline silicon substrate; taking the metal film at the bottom of the deep silicon groove as a conductive electroplating seed layer, and immersing the monocrystalline silicon substrate with the deep silicon groove in electroplating solution for electroplating to increase the thickness of the metal film to a specified height so as to form a metal structure with a specified aspect ratio; and immersing the monocrystalline silicon substrate formed with the metal structures with the specified aspect ratio in the mixed solution for isotropic wet etching for a period of time to remove monocrystalline silicon between the metal structures. The nano-scale metal structure manufactured by the manufacturing method has a large aspect ratio.
Description
Technical field
The present invention relates to technical field of nano-processing more particularly to a kind of production sides of large ratio of height to width nano level metal structure
Method.
Background technique
For the phase-type diffraction optical element of high accuracy X-ray wave band, in order to obtain required position phase, it is necessary to make
Large ratio of height to width nano level metal structure.Currently, being mainly to utilize multilayer adhesive process and dry etching in nanofabrication technique
Technique makes large ratio of height to width nano level metal structure, i.e., using thicker photoresist as mask, passes through dry etching work
Skill carries out deep silicon etching.
In the implementation of the present invention, inventor's discovery at least has the following technical problems in the prior art：
Due to the isotropic etching of photoresist, lateral etching precision is difficult to control, so that thicker photoresist exists
The figure due to caused by developer solution tension is easy to appear when development to collapse problem；Metal is formed by when subsequent dry etching simultaneously
There is also the problems of line width steepness difference for structure.Making the depth-width ratio of the nano level metal structure of production for these reasons has
Limit, i.e. its depth-width ratio are difficult to be greater than 10.
Summary of the invention
In order to solve the above technical problem, the present invention provides a kind of production method of large ratio of height to width nano level metal structure,
The figure that can occur when avoiding photoresist developing collapse problem and dry etching depth silicon when the line width steepness that occurs it is poor
The problem of, and the depth-width ratio of the nano level metal structure of its production is big.
The present invention provides a kind of production method of large ratio of height to width nano level metal structure, including：
The spin coating photoresist in the monocrystalline substrate of special parameter, and electron beam exposure is carried out to the photoresist and is shown
Shadow, to form grating mask slot in the photoresist；
Using electron beam evaporation metal material, to form metallic film in the grating mask slot；
Remaining photoresist in the monocrystalline substrate is removed, to form metallic film figure on the monocrystalline substrate surface
Case；
Using the metallic film as catalyst, the monocrystalline substrate that surface is formed with metal thin film patterns is immersed in by hydrogen
Catalyzed corrosion is carried out for a period of time in the mixed liquor of fluoric acid, hydrogen peroxide and deionized water composition, in the monocrystalline substrate
The deep silicon slot of large ratio of height to width is formed,；
Using the metallic film of the deep silicon trench bottom as conductive plated seed layer, will there is the monocrystalline silicon of deep silicon slot to serve as a contrast
Bottom is immersed in electroplate liquid and is electroplated, and the thickness to increase the metallic film specifies depth-width ratio to specified altitude assignment to be formed
Metal structure；
The monocrystalline substrate for being formed with the metal structure of specified depth-width ratio is immersed in and is made of hydrofluoric acid, nitric acid and acetic acid
Isotropism wet etching is carried out for a period of time in mixed liquor, to remove the monocrystalline silicon between the metal structure；
The special parameter includes crystal orientation, doping type and the resistivity of monocrystalline silicon.
The production method of large ratio of height to width nano level metal structure provided in an embodiment of the present invention, compared with prior art,
The metal structure for only needing to form very thin metal thin film patternsization on the monosilicon large ratio of height to width, from may be not present
The figure due to caused by developer solution tension occurred when photoresist is very thick collapse problem and dry etching depth silicon when the line that occurs
The problem of wide steepness difference；And it is big using the depth-width ratio of the nano level metal structure of production method production of the invention.
Detailed description of the invention
Fig. 1 is the flow chart of the production method of large ratio of height to width nano level metal structure of the present invention；
Fig. 2 is the schematic diagram of the metal thin film patterns in above-described embodiment.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
It is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
As shown in Figure 1, the present invention provides a kind of production method of large ratio of height to width nano level metal structure, the method packet
It includes：
Step 1) spin coating photoresist in the monocrystalline substrate of special parameter, and electron beam exposure is carried out to the photoresist
With development, in the photoresist formed grating mask slot.
Wherein, the special parameter includes crystal orientation, doping type and the resistivity of monocrystalline silicon, specifically, the monocrystalline silicon
Crystal orientation be<100>, the monocrystalline silicon is p-type doping, and the resistivity of the monocrystalline silicon is greater than 10cm.
Wherein, the photoresist be PMMA photoresist, the PMMA photoresist with a thickness of 200nm.
Step 2) utilizes electron beam evaporation metal material, to form metallic film in the grating mask slot.
Wherein, the metal material is gold, platinum or silver, the metallic film with a thickness of 10nm~50nm.
Step 3) removes remaining photoresist in the monocrystalline substrate, to form metal on the monocrystalline substrate surface
Thinfilm pattern.
Wherein, the characteristic size of the metal thin film patterns is 10nm~3 μm.
Step 4) is soaked the monocrystalline substrate that surface is formed with metal thin film patterns using the metallic film as catalyst
Catalyzed corrosion is carried out for a period of time in the mixed liquor being made of hydrofluoric acid, hydrogen peroxide and deionized water, in the monocrystalline silicon
The deep silicon slot of large ratio of height to width is formed on substrate.
Wherein, the molar ratio of the hydrofluoric acid, hydrogen peroxide and deionized water mixing is 5.9：0.3：48.
Step 5) will have the list of deep silicon slot using the metallic film of the deep silicon trench bottom as conductive plated seed layer
Crystalline silicon substrate is immersed in electroplate liquid and is electroplated, and the thickness to increase the metallic film specifies height to specified altitude assignment to be formed
The metal structure of wide ratio.
Wherein, the molar ratio of the hydrofluoric acid, nitric acid and acetic acid mixing is 23：4：1.
The monocrystalline substrate for being formed with the metal structure of specified depth-width ratio is immersed in by hydrofluoric acid, nitric acid and acetic acid by step 6)
Isotropism wet etching is carried out for a period of time in the mixed liquor of composition, to remove the monocrystalline silicon between the metal structure.
The production method of large ratio of height to width nano level metal structure provided in an embodiment of the present invention, compared with prior art,
The metal structure for only needing to form very thin metal thin film patternsization on the monosilicon large ratio of height to width, from may be not present
The figure due to caused by developer solution tension occurred when photoresist is very thick collapse problem and dry etching depth silicon when the line that occurs
The problem of wide steepness difference；And it is big using the depth-width ratio of the nano level metal structure of production method production of the invention.
The present invention is described in further details below by a specific example.
Step 1) the PMMA photoresist that spin coating a layer thickness is 200nm on a monocrystaline silicon substrate, and to the PMMA photoetching
Glue carries out electron beam exposure and development, to form grating mask slot in the PMMA photoresist.
Wherein, the crystal orientation of the monocrystalline silicon is<100>, the monocrystalline silicon is p-type doping, and the resistivity of the monocrystalline silicon is big
In 10cm.
Step 2) utilizes electron beam evaporation gold material, to be formed in the grating mask slot with a thickness of 20nm gold thin film.
Step 3) removes remaining PMMA photoresist in the monocrystalline substrate, to be formed on the monocrystalline substrate surface
Gold thin film pattern, as shown in Fig. 2, the gold thin film pattern is made of multiple squares of periodic arrangement.
Wherein, the characteristic size of the gold thin film pattern is 200nm, i.e., the side length of each square is 200nm.
Step 4) using the gold thin film as catalyst, by surface be formed with belong to Thinfilm pattern monocrystalline substrate be immersed in by
It is carried out catalyzed corrosion 10 minutes in the mixed liquor of hydrofluoric acid, hydrogen peroxide and deionized water composition, in the monocrystalline substrate
Forming depth-width ratio is 100:1 deep silicon slot.
Wherein, the molar ratio of the hydrofluoric acid, hydrogen peroxide and deionized water mixing is 5.9：0.3：48.
Step 5) will have the monocrystalline of deep silicon slot using the gold thin film of the deep silicon trench bottom as conductive plated seed layer
Silicon substrate is immersed in gold plating bath and is electroplated, and the thickness to increase the gold thin film is to form depth-width ratio to specified altitude assignment
100:1 golden structure.
Wherein, the molar ratio of the hydrofluoric acid, nitric acid and acetic acid mixing is 23：4：1.
It is 100 that step 6), which will be formed with depth-width ratio,:The monocrystalline substrate of 1 golden structure is immersed in by hydrofluoric acid, nitric acid and vinegar
It is carried out isotropism wet etching 3 minutes in the mixed liquor of acid composition, to remove the monocrystalline silicon between the golden structure.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by those familiar with the art, all answers
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (6)
1. a kind of production method of large ratio of height to width nano level metal structure, which is characterized in that including：
The spin coating photoresist in the monocrystalline substrate of special parameter, and electron beam exposure and development are carried out to the photoresist, with
Grating mask slot is formed in the photoresist；
Using electron beam evaporation metal material, to form metallic film in the grating mask slot；
Remaining photoresist in the monocrystalline substrate is removed, to form metal thin film patterns on the monocrystalline substrate surface；
Using the metallic film as catalyst, the monocrystalline substrate that surface is formed with metal thin film patterns is immersed in by hydrogen fluorine
Catalyzed corrosion is carried out for a period of time in the mixed liquor of acid, hydrogen peroxide and deionized water composition, with the shape in the monocrystalline substrate
At the deep silicon slot of large ratio of height to width；
Using the metallic film of the deep silicon trench bottom as conductive plated seed layer, will there is the monocrystalline substrate of deep silicon slot to soak
It is electroplated in electroplate liquid, the thickness to increase the metallic film specifies the metal of depth-width ratio with formation to specified altitude assignment
Structure；
The monocrystalline substrate for being formed with the metal structure of specified depth-width ratio is immersed in the mixing being made of hydrofluoric acid, nitric acid and acetic acid
Isotropism wet etching is carried out for a period of time in liquid, to remove the monocrystalline silicon between the metal structure；
The special parameter includes crystal orientation, doping type and the resistivity of monocrystalline silicon；
The photoresist be PMMA photoresist, the PMMA photoresist with a thickness of 200nm.
2. the method according to claim 1, wherein the crystal orientation of the monocrystalline silicon is<100>, the monocrystalline silicon is
The resistivity of p-type doping, the monocrystalline silicon is greater than 10 Ω cm.
3. the method according to claim 1, wherein the metal material is gold, platinum or silver, the metal
Film with a thickness of 10nm~50nm.
4. the method according to claim 1, wherein the hydrofluoric acid, hydrogen peroxide and deionized water mixing rub
Your ratio is 5.9：0.3：48.
5. the method according to claim 1, wherein the molar ratio of the hydrofluoric acid, nitric acid and acetic acid mixing
It is 23：4：1.
6. the method according to claim 1, wherein the characteristic size of the metal thin film patterns is the μ of 10nm~3
m。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610407163.0A CN106094445B (en) | 2016-06-12 | 2016-06-12 | Method for manufacturing nano-scale metal structure with large height-width ratio |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610407163.0A CN106094445B (en) | 2016-06-12 | 2016-06-12 | Method for manufacturing nano-scale metal structure with large height-width ratio |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106094445A CN106094445A (en) | 2016-11-09 |
| CN106094445B true CN106094445B (en) | 2018-11-20 |
Family
ID=57227745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610407163.0A Active CN106094445B (en) | 2016-06-12 | 2016-06-12 | Method for manufacturing nano-scale metal structure with large height-width ratio |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106094445B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108018587A (en) * | 2017-12-07 | 2018-05-11 | 天津大学 | A kind of method that graphical cobalt nanowire array is prepared based on polycarbonate template method |
| CN108048882A (en) * | 2017-12-07 | 2018-05-18 | 天津大学 | A kind of method that graphical cobalt nanowire array is prepared based on anodic oxidation aluminium formwork method |
| CN109827981B (en) * | 2019-02-28 | 2020-07-31 | 中国科学院西安光学精密机械研究所 | Preparation method of X-ray all-optical solid ultrafast detection chip modulation grating and grating |
| CN110286432B (en) * | 2019-06-25 | 2021-08-10 | 安徽工程大学 | Preparation method of X-ray gold transmission grating |
| CN111776252B (en) * | 2020-07-06 | 2021-10-01 | 南京航空航天大学 | Laval nozzle structure-imitated guide plate functional surface and manufacturing method thereof |
| CN113582129B (en) * | 2021-07-27 | 2024-02-02 | 浙江大学 | High-aspect-ratio probe based on metal-assisted chemical etching and manufacturing method thereof |
| CN116288374B (en) * | 2022-12-30 | 2023-10-13 | 东莞赛诺高德蚀刻科技有限公司 | Metal surface secondary processing method based on etching and electrodeposition |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7018548B2 (en) * | 2002-07-19 | 2006-03-28 | Tdk Corporation | Conductive thin film pattern and method of forming the same, method of manufacturing thin film magnetic head, method of manufacturing thin film inductor, and method of manufacturing micro device |
| CN1799986A (en) * | 2004-12-30 | 2006-07-12 | 中国科学院微电子研究所 | Three-layer manufacturing process of high-aspect-ratio deep submicron and nanometer metal structure |
| CN103713392A (en) * | 2012-09-28 | 2014-04-09 | Nlt科技股份有限公司 | Space image forming element, method of manufacturing the same, display device, and terminal |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004093634A (en) * | 2002-08-29 | 2004-03-25 | Nippon Sheet Glass Co Ltd | Method of forming structure |
| TWI220267B (en) * | 2003-07-31 | 2004-08-11 | Univ Nat Cheng Kung | Manufacturing method of transferring pattern with high aspect ratio |
| CN100466171C (en) * | 2004-12-30 | 2009-03-04 | 中国科学院微电子研究所 | Self-supporting film-based high aspect ratio deep submicron and nano metal structure manufacturing process |
-
2016
- 2016-06-12 CN CN201610407163.0A patent/CN106094445B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7018548B2 (en) * | 2002-07-19 | 2006-03-28 | Tdk Corporation | Conductive thin film pattern and method of forming the same, method of manufacturing thin film magnetic head, method of manufacturing thin film inductor, and method of manufacturing micro device |
| CN1799986A (en) * | 2004-12-30 | 2006-07-12 | 中国科学院微电子研究所 | Three-layer manufacturing process of high-aspect-ratio deep submicron and nanometer metal structure |
| CN103713392A (en) * | 2012-09-28 | 2014-04-09 | Nlt科技股份有限公司 | Space image forming element, method of manufacturing the same, display device, and terminal |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106094445A (en) | 2016-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106094445B (en) | Method for manufacturing nano-scale metal structure with large height-width ratio | |
| WO2016129534A1 (en) | Method for manufacturing deposition mask, and deposition mask | |
| US20130025663A1 (en) | Inverted pyramid texture formation on single-crystalline silicon | |
| JPH07504785A (en) | Solar cell with combined metal coating and method for manufacturing the same | |
| US9343363B2 (en) | Through-silicon vias and interposers formed by metal-catalyzed wet etching | |
| KR101906375B1 (en) | Method for metallizing textured surfaces | |
| CN106024702A (en) | Manufacturing method of air bridge with inverted trapezoidal pier | |
| JP2009223010A (en) | Metal plate for wire grid, self-supported wire grid, and method of manufacturing metal plate for wire grid | |
| KR102468093B1 (en) | Method of enhancing copper electroplating | |
| JP2016148113A (en) | Method of manufacturing vapor deposition mask, and vapor deposition mask | |
| Leng et al. | Progress in metal-assisted chemical etching of silicon nanostructures | |
| CN110361801B (en) | Unequal-height metal grating and manufacturing method thereof | |
| CN102466967A (en) | Method for manufacturing diffraction optical element with large height-width ratio | |
| Asano et al. | A novel wafer dicing method using metal-assisted chemical etching | |
| KR101843035B1 (en) | Producing methods of the mother plate and mask | |
| EP2102900B1 (en) | Self-constrained anisotropic germanium nanostructure from electroplating | |
| KR101274155B1 (en) | Method of fabricating metal mask | |
| CN110429030A (en) | The preparation method of nanometer grid and nanometer gate device | |
| CN103474339A (en) | Method for manufacturing high-evenness grid electrode lines | |
| CN114016127A (en) | Method for constructing diamond structure pattern | |
| JP2017057494A (en) | Vapor deposition mask, method for manufacturing vapor deposition mask and method for manufacturing organic semiconductor element | |
| CN106629579A (en) | Preparation method of micro-electromechanical device | |
| TW201629622A (en) | A method of patterning a layer | |
| US20050233560A1 (en) | Silicon substrates with multi-grooved surface and production methods thereof | |
| CN110520392B (en) | Method for producing a metal film supported by a glass support |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |