CN1799986A - Three-layer production process for high aspect ratio, deep submicro nanometer metal structure - Google Patents
Three-layer production process for high aspect ratio, deep submicro nanometer metal structure Download PDFInfo
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- CN1799986A CN1799986A CN 200410101872 CN200410101872A CN1799986A CN 1799986 A CN1799986 A CN 1799986A CN 200410101872 CN200410101872 CN 200410101872 CN 200410101872 A CN200410101872 A CN 200410101872A CN 1799986 A CN1799986 A CN 1799986A
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Abstract
The invention relates to a method for producing high height-width rate deep sub-micron nanometer metallic structure, which comprises: 1, depositing thin chrome-gold layer on the silicon plate; 2, laying bottom photo resist on the surface of thin chrome-gold layer to be dried and solidified; 3, depositing intermediate insulated layer; 4, plating top electric-beam photo resist to process electric-beam photo-etching; 5, anisotropic etching the central insulated patter; 6, anisotropic etching bottom photo resist pattern; 7, putting the plate in plating solution to plate the high height-width rate deep sub-micron nanometer metallic structure; 8, removing the pattern of intermediate insulated layer; 9, removing the pattern of bottom photo-etching resist; 10, removing thin chrome-gold layer to complete the high height-width rate deep sub-micron nanometer metallic structure. The inventive process utilizes three-layer pattern transmission technique, one time of front face electric beam photo etching, and two times of anisotropic etching to process pattern transmission to attain high height-width rate deep sub-micron nanometer metallic structure, which can meet the demand of nanometer micro mechanical system, and apply mass production.
Description
Technical field
Three layers of manufacture craft of a kind of high depth-width ratio deep sub-micrometer of the present invention, nanometer metal structure relate to the micro processing field in the semiconductor technology, its feature is to adopt three layers of glue pattern transfer techniques, adopt once front beamwriter lithography, the secondary anisotropic etching carries out the figure transfer and once electroplates obtaining high depth-width ratio deep sub-micrometer, nanometer metal structure, has very strong practical value.
Background technology
Micro mechanical system element for nanoscale, must make high depth-width ratio deep sub-micrometer, nanometer metal structure, as everyone knows, be subjected to resolution ratio and electronic energy quantitative limitation, conventional beamwriter lithography technology can't be made high depth-width ratio deep sub-micrometer, nanometer metal structure, if adopt beamwriter lithography technology, not only cost height, complex process twice, and the overlay alignment ability of beamwriter lithography machine proposed very high requirement, be difficult in actual use realize.
Summary of the invention
Three layers of manufacture craft that the purpose of this invention is to provide a kind of high depth-width ratio deep sub-micrometer, nanometer metal structure, it adopts three layers of glue pattern transfer techniques, adopt once front beamwriter lithography, the secondary anisotropic etching is carried out figure and is shifted acquisition high depth-width ratio deep sub-micrometer, nanometer metal structure, can satisfy the micro mechanical system element requirement of nanoscale.
For achieving the above object, technical solution of the present invention provides a kind of high depth-width ratio deep sub-micrometer, three layers of manufacture craft of nanometer metal structure, its high depth-width ratio deep sub-micrometer, the formation of nanometer metal structure is: the lining base is electroplated in deposit on the silicon chip front earlier, get rid of bottom photoresist and deposition insulating layer, use the beamwriter lithography deep-submicron again, the nanometer metal structure figure, and form to electroplate mould for sheltering anisotropic etching insulating barrier and bottom photoresist with it, electroplate out high depth-width ratio deep sub-micrometer, nanometer metal structure, remove intermediate insulating layer again, remove the bottom photoresist, remove the plating lining base under the bottom photoresist at last, thereby make high depth-width ratio deep sub-micrometer, nanometer metal structure.
Three layers of manufacture craft of described a kind of high depth-width ratio deep sub-micrometer, nanometer metal structure comprise the steps:
Step 1, on the silicon chip front the thin gold layer of deposit thin chromium, as electroplating the lining base;
Step 2, on the thin golden laminar surface of Bao Ge, get rid of the bottom photoresist, and preceding baking is solidified;
Step 3, electroplating deposit intermediate insulating layer on the lining primary surface;
Step 4, on the intermediate insulation laminar surface, be coated with the top layer electron beam resist, and carry out beamwriter lithography, top layer photoresist figure;
Step 5, anisotropic etching intermediate insulating layer get the intermediate insulation layer pattern;
Step 6, anisotropic etching bottom photoresist get bottom photoresist figure;
Step 7, step 6 gained slice, thin piece is placed on electroplates high depth-width ratio deep sub-micrometer, nanometer metal structure in the electroplate liquid;
Step 8, step 7 gained slice, thin piece is removed top layer photoresist figure and intermediate insulation layer pattern;
Step 9, step 8 gained slice, thin piece is removed bottom photoresist figure;
Step 10, the thin chromium of removing under the bottom photoresist figure again approach the gold layer, finish high depth-width ratio deep sub-micrometer, nanometer metal structure.
Three layers of manufacture craft of described a kind of high depth-width ratio deep sub-micrometer, nanometer metal structure, in its described step 1, the thin gold layer of Bao Ge is that the deposited by electron beam evaporation method obtains, gross thickness is 10～30nm.
Three layers of manufacture craft of described a kind of high depth-width ratio deep sub-micrometer, nanometer metal structure, in its described step 2, the bottom photoresist is the photoresist or the polyimides of AZ series, preceding baking solidification temperature is 120 ℃～250 ℃.
Three layers of manufacture craft of described a kind of high depth-width ratio deep sub-micrometer, nanometer metal structure, in its described step 3, intermediate insulating layer is the laminated film of silica or silicon nitride or silica and silicon nitride, this insulating barrier is to obtain with plasma enhanced CVD or sputtering method, and thickness of insulating layer is 100～300nm.
Three layers of manufacture craft of described a kind of high depth-width ratio deep sub-micrometer, nanometer metal structure, in its described step 4, the thickness of top layer electron beam resist is 150～350nm, before carrying out beamwriter lithography, slice, thin piece is placed on 100 ℃～110 ℃ hot plates goes forward to dry by the fire≤2 minutes.
Three layers of manufacture craft of described a kind of high depth-width ratio deep sub-micrometer, nanometer metal structure, in its described step 5, the anisotropic etching intermediate insulating layer is to adopt fluorine base gas; In the step 6, anisotropic etching bottom photoresist is to adopt oxygen gas.
Three layers of manufacture craft of described a kind of high depth-width ratio deep sub-micrometer, nanometer metal structure, in its described step 8, removing the intermediate insulation layer pattern is to adopt hydrofluoric acid and amine fluoride volume ratio to finish less than 1: 4 hydrofluoric acid and amine fluoride mixed liquor, and top layer photoresist figure also is removed automatically when removing the intermediate insulation layer pattern.
Three layers of manufacture craft of described a kind of high depth-width ratio deep sub-micrometer, nanometer metal structure in its described step 9, are removed the bottom photoresist and are adopted the oxygen gas plasma isotropic etching to finish.
Three layers of manufacture craft of described a kind of high depth-width ratio deep sub-micrometer, nanometer metal structure, in its described step 10, remove the thin gold layer of thin chromium under the bottom photoresist figure, be at first to adopt ion beam etching gold layer, use cerous ammonium nitrate again: perchloric acid: deionized water=240 grams: 50 milliliters: 1000 milliliters the liquid wet etching chromium layer that dechromises is finished.
Three layers of manufacture craft of described a kind of high depth-width ratio deep sub-micrometer, nanometer metal structure in its described step 10, behind the thin gold layer of thin chromium under the removal bottom photoresist figure, are used deionized water rinsing again, and nitrogen dries up.
High depth-width ratio deep sub-micrometer, the nanometer metal structure of process preparation of the present invention are suitable for big production.
Description of drawings
Fig. 1-1 is to Fig. 1-the 10th, the flow chart of technology of the present invention;
Fig. 2-1 is to Fig. 2-the 11st, the flow chart of the embodiment of the invention.
The specific embodiment
Seeing Fig. 1, is the flow chart of three layers of manufacture craft of a kind of high depth-width ratio deep sub-micrometer of the present invention, nanometer metal structure, and its flow process is as follows:
1, as Figure 1-1, at first deposit thin chromium approaches gold 102 on silicon chip 101 fronts, and the thin gold 102 of this thin chromium can use electron beam evaporation method to obtain, and gross thickness is 10～30nm.
2, shown in Fig. 1-2, on thin golden 102 surfaces of Bao Ge, get rid of bottom photoresist 103, bottom photoresist 103 is the photoresist or the polyimides of AZ series, and baking was solidified before bottom photoresist 103 was carried out, and preceding baking solidification temperature is 120 ℃～250 ℃.
3, as Figure 1-3, deposit intermediate insulating layer 104 on bottom photoresist 103 surfaces, intermediate insulating layer 104 is the laminated film of silica or silicon nitride or silica and silicon nitride, insulating barrier 104 can use plasma enhanced CVD or sputtering method to obtain, and insulating barrier 104 thickness are 100～300nm.
4, shown in Fig. 1-4, be coated with the top layer electron beam resist in the slice, thin piece front, carry out beamwriter lithography and obtain photoresist figure 105.
5, shown in Fig. 1-5, adopt fluorine base gas, be that masking layer carries out anisotropic plasma etch to middle insulating barrier 104 with photoresist figure 105, obtain insulating barrier figure 106.
6, shown in Fig. 1-6, adopt oxygen gas, be that masking layer carries out anisotropic plasma etch to bottom photoresist 103 with photoresist figure 105 and intermediate insulation layer pattern 106, obtain bottom photoresist figure 107.
7, shown in Fig. 1-7,, slice, thin piece is placed in the electroplate liquid electroplates as electroplating mould with bottom photoresist figure 107, obtain high depth-width ratio deep sub-micrometer, nanometer metal structure 108.
8, shown in Fig. 1-8, slice, thin piece is put into hydrofluoric acid and amine fluoride volume ratio less than 1: 4 hydrofluoric acid and amine fluoride mixed liquor, remove top layer photoresist figure 105 and intermediate insulation layer pattern 106.
9, shown in Fig. 1-9, adopt oxygen gas plasma isotropic etching method, remove bottom photoresist figure 107.
10, shown in Fig. 1-10, at first adopt the ion beam etching down payment, use cerous ammonium nitrate again: perchloric acid: deionized water=240 grams: 50 milliliters: the method for 1000 milliliters the liquid wet etching that dechromises is removed end chromium, finally obtains high depth-width ratio deep sub-micrometer, nanometer metal structure.
Embodiment
1, shown in Fig. 2-1, at first deposit thin chromium approaches gold 202 on silicon chip 201 fronts, and the thin gold 202 of this thin chromium can use electron beam evaporation method to obtain, and gross thickness is 10～30nm.
2, shown in Fig. 2-2, get rid of bottom photoresist 203 on thin golden 202 surfaces of Bao Ge, bottom photoresist 203 is the photoresist or the polyimides of AZ series, bottom photoresist 203 is put into baking oven carry out preceding baking curing, before the baking solidification temperature be 120 ℃～250 ℃, the time is half an hour～one hour.
3, shown in Fig. 2-3, deposit intermediate insulating layer 204 on bottom photoresist 203 surfaces, intermediate insulating layer 204 is the laminated film of silica or silicon nitride or silica and silicon nitride, insulating barrier 204 can use plasma enhanced CVD or sputtering method to obtain, and insulating barrier 204 thickness are 100～300nm.
4, shown in Fig. 2-4, on intermediate insulating layer 204, be coated with top layer electron beam resist 205, slice, thin piece is placed on 105 ℃ of hot plates went forward to dry by the fire 2 minutes, the thickness of top layer electron beam resist 205 is 150～350nm.
5, shown in Fig. 2-5, beamwriter lithography obtains top layer photoresist figure 206.
6, shown in Fig. 2-6, adopt fluorine base gas, be that masking layer carries out anisotropic plasma etch to middle insulating barrier 204 with top layer photoresist figure 206, obtain intermediate insulation layer pattern 207.
7, shown in Fig. 2-7, adopt oxygen gas, be that masking layer carries out anisotropic plasma etch to bottom photoresist 203 with top layer photoresist figure 206 and intermediate insulation layer pattern 207, obtain bottom photoresist figure 208.
8, shown in Fig. 2-8,, slice, thin piece is placed in the electroplate liquid electroplates as electroplating mould with bottom photoresist figure 208, obtain high depth-width ratio deep sub-micrometer, nanometer metal structure 209.
9, shown in Fig. 2-9, slice, thin piece is put into hydrofluoric acid and amine fluoride volume ratio less than 1: 4 mixed liquor, remove top layer photoresist figure 206 and intermediate insulation layer pattern 207.
10, shown in Fig. 2-10, adopt oxygen gas plasma isotropic etching method, remove bottom photoresist figure 208.
11, shown in Fig. 2-11, at first that slice, thin piece is golden with the ion beam etching bottoming, use cerous ammonium nitrate again: perchloric acid: deionized water=240 grams: 50 milliliters: 1000 milliliters the liquid that dechromises removes end chromium, deionized water rinsing, nitrogen dries up, and finishes final high depth-width ratio deep sub-micrometer, nanometer metal structure making.
Claims (11)
1, a kind of high depth-width ratio deep sub-micrometer, three layers of manufacture craft of nanometer metal structure, it is characterized in that, high depth-width ratio deep sub-micrometer, the formation of nanometer metal structure is: the lining base is electroplated in deposit on the silicon chip front earlier, get rid of bottom photoresist and deposition insulating layer, use the beamwriter lithography deep-submicron again, the nanometer metal structure figure, and form to electroplate mould for sheltering anisotropic etching insulating barrier and bottom photoresist with it, electroplate out high depth-width ratio deep sub-micrometer, nanometer metal structure, remove intermediate insulating layer again, remove the bottom photoresist, remove the plating lining base under the bottom photoresist at last, thereby make high depth-width ratio deep sub-micrometer, nanometer metal structure.
2, three layers of manufacture craft of a kind of high depth-width ratio deep sub-micrometer according to claim 1, nanometer metal structure is characterized in that, comprise the steps:
Step 1, on the silicon chip front the thin gold layer of deposit thin chromium, as electroplating the lining base;
Step 2, on the thin golden laminar surface of Bao Ge, get rid of the bottom photoresist, and preceding baking is solidified;
Step 3, electroplating deposit intermediate insulating layer on the lining primary surface;
Step 4, on the intermediate insulation laminar surface, be coated with the top layer electron beam resist, and carry out beamwriter lithography, top layer photoresist figure;
Step 5, anisotropic etching intermediate insulating layer get the intermediate insulation layer pattern;
Step 6, anisotropic etching bottom photoresist get bottom photoresist figure;
Step 7, step 6 gained slice, thin piece is placed on electroplates high depth-width ratio deep sub-micrometer, nanometer metal structure in the electroplate liquid;
Step 8, step 7 gained slice, thin piece is removed top layer photoresist figure and intermediate insulation layer pattern;
Step 9, step 8 gained slice, thin piece is removed bottom photoresist figure;
Step 10, the thin chromium of removing under the bottom photoresist figure again approach the gold layer, finish high depth-width ratio deep sub-micrometer, nanometer metal structure.
3, three layers of manufacture craft of a kind of high depth-width ratio deep sub-micrometer according to claim 2, nanometer metal structure is characterized in that, in the described step 1, the thin gold layer of Bao Ge is that the deposited by electron beam evaporation method obtains, and gross thickness is 10～30nm.
4, three layers of manufacture craft of a kind of high depth-width ratio deep sub-micrometer according to claim 2, nanometer metal structure, it is characterized in that, in the described step 2, the bottom photoresist is the photoresist or the polyimides of AZ series, and preceding baking solidification temperature is 120 ℃～250 ℃.
5, three layers of manufacture craft of a kind of high depth-width ratio deep sub-micrometer according to claim 2, nanometer metal structure, it is characterized in that, in the described step 3, intermediate insulating layer is the laminated film of silica or silicon nitride or silica and silicon nitride, this insulating barrier is to obtain with plasma enhanced CVD or sputtering method, and thickness of insulating layer is 100～300nm.
6, three layers of manufacture craft of a kind of high depth-width ratio deep sub-micrometer according to claim 2, nanometer metal structure, it is characterized in that, in the described step 4, the thickness of top layer electron beam resist is 150～350nm, before carrying out beamwriter lithography, slice, thin piece is placed on 100 ℃～110 ℃ hot plates goes forward to dry by the fire≤2 minutes.
7, three layers of manufacture craft of a kind of high depth-width ratio deep sub-micrometer according to claim 2, nanometer metal structure is characterized in that, in the described step 5, the anisotropic etching intermediate insulating layer is to adopt fluorine base gas; In the step 6, anisotropic etching bottom photoresist is to adopt oxygen gas.
8, three layers of manufacture craft of a kind of high depth-width ratio deep sub-micrometer according to claim 2, nanometer metal structure, it is characterized in that, in the described step 8, removing the intermediate insulation layer pattern is to adopt hydrofluoric acid and amine fluoride volume ratio to finish less than 1: 4 hydrofluoric acid and amine fluoride mixed liquor, and top layer photoresist figure also is removed automatically when removing the intermediate insulation layer pattern.
9, three layers of manufacture craft of a kind of high depth-width ratio deep sub-micrometer according to claim 2, nanometer metal structure is characterized in that, in the described step 9, remove the bottom photoresist and adopt the oxygen gas plasma isotropic etching to finish.
10, three layers of manufacture craft of a kind of high depth-width ratio deep sub-micrometer according to claim 2, nanometer metal structure, it is characterized in that, in the described step 10, remove the thin gold layer of thin chromium under the bottom photoresist figure, be at first to adopt ion beam etching gold layer, use cerous ammonium nitrate again: perchloric acid: deionized water=240 grams: 50 milliliters: 1000 milliliters the liquid wet etching chromium layer that dechromises is finished.
11, three layers of manufacture craft of a kind of high depth-width ratio deep sub-micrometer according to claim 2, nanometer metal structure is characterized in that, in the described step 10, behind the thin gold layer of thin chromium under the removal bottom photoresist figure, use deionized water rinsing again, and nitrogen dries up.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608864A (en) * | 2012-02-10 | 2012-07-25 | 中国科学院微电子研究所 | Method for manufacturing nanoscale component with large height-width ratio |
| CN102608862A (en) * | 2011-01-19 | 2012-07-25 | 中国科学院微电子研究所 | Method for producing device in structure with large height-to-width ratio |
| TWI411570B (en) * | 2009-08-05 | 2013-10-11 | ||
| CN106094445A (en) * | 2016-06-12 | 2016-11-09 | 中国科学院微电子研究所 | The manufacture method of large ratio of height to width nano level metal structure |
| CN106290516A (en) * | 2015-06-10 | 2017-01-04 | 深圳市容大感光科技股份有限公司 | Preparing and as the application without enzyme sensor of a kind of hydrotalcite nano piece/carbon array/Metal And Silicon combination electrode |
| CN111487845A (en) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | Method for manufacturing L ED die electrode mask pattern capable of being directly stripped |
-
2004
- 2004-12-30 CN CN 200410101872 patent/CN1799986A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI411570B (en) * | 2009-08-05 | 2013-10-11 | ||
| CN102608862A (en) * | 2011-01-19 | 2012-07-25 | 中国科学院微电子研究所 | Method for producing device in structure with large height-to-width ratio |
| CN102608864A (en) * | 2012-02-10 | 2012-07-25 | 中国科学院微电子研究所 | Method for manufacturing nanoscale component with large height-width ratio |
| CN106290516A (en) * | 2015-06-10 | 2017-01-04 | 深圳市容大感光科技股份有限公司 | Preparing and as the application without enzyme sensor of a kind of hydrotalcite nano piece/carbon array/Metal And Silicon combination electrode |
| CN106290516B (en) * | 2015-06-10 | 2019-06-28 | 深圳市容大感光科技股份有限公司 | A kind of hydrotalcite nano piece/carbon array/Metal And Silicon combination electrode preparation and its application as no enzyme sensor |
| CN106094445A (en) * | 2016-06-12 | 2016-11-09 | 中国科学院微电子研究所 | The manufacture method of large ratio of height to width nano level metal structure |
| CN106094445B (en) * | 2016-06-12 | 2018-11-20 | 中国科学院微电子研究所 | The production method of large ratio of height to width nano level metal structure |
| CN111487845A (en) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | Method for manufacturing L ED die electrode mask pattern capable of being directly stripped |
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