CN110361801B - Unequal-height metal grating and manufacturing method thereof - Google Patents
Unequal-height metal grating and manufacturing method thereof Download PDFInfo
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- CN110361801B CN110361801B CN201910536717.0A CN201910536717A CN110361801B CN 110361801 B CN110361801 B CN 110361801B CN 201910536717 A CN201910536717 A CN 201910536717A CN 110361801 B CN110361801 B CN 110361801B
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- 239000002184 metal Substances 0.000 title claims abstract description 98
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 98
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000009713 electroplating Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 239000010931 gold Substances 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
The invention discloses a method for manufacturing a non-equal-height metal grating, which comprises the following steps: manufacturing a seed layer on a substrate; coating photoresist on the seed layer, and manufacturing first grating patterns which are arranged at equal intervals; forming a first metal grid line by electroplating; coating photoresist on the first grating pattern, and manufacturing a second grating pattern which is arranged at equal intervals, wherein the grating constant of the second grating pattern is larger than that of the first grating pattern; electroplating again to form a second metal grid line; the photoresist is removed and the seed layer that is not masked is etched away. The metal grating structure with double periods is formed, and has more optimized parameters, so that the adjustment is more flexible, and better optical performance is achieved.
Description
Technical Field
The invention relates to the technical field of integrated optics, in particular to a non-uniform height metal grating and a manufacturing method thereof.
Background
With the development of micro-nano processing technology, various optoelectronic devices are more miniaturized and integrated, various microstructures such as photonic crystals, gratings and the like are more widely applied in various fields, wherein the gratings have great application value in the fields of X-ray, space application, biomedicine, beam shaping and the like, and various optical elements manufactured by utilizing various diffraction, polarization and other characteristics of the gratings become mainstream of the market.
The conventional grating is an optical writing element composed of a large number of structures which are equally spaced and parallel, and the material of the grating is generally transparent glass or non-metallic material. Compared with common materials, the grating manufactured by using metal can realize exceeding diffraction limit and stronger focusing effect by exciting surface plasma, but the height or grating constant of the metal grating manufactured in the prior art is fixed, and generally one grating can only adjust one optical parameter, namely phase or amplitude, so that the use is single, and diversified requirements in practical application cannot be met.
Disclosure of Invention
In order to overcome the problems of the prior art that the metal gratings have the same height and the performance parameters are relatively single, the invention provides a method for manufacturing a metal grating with unequal heights, which comprises the following steps:
manufacturing a seed layer on a substrate;
coating photoresist on the seed layer, and carrying out grating exposure and grating development on the photoresist coated on the seed layer to form a first grating pattern so as to expose the seed layer;
forming a first metal grid line by electroplating;
coating photoresist on the first grating pattern, and manufacturing a second grating pattern which is arranged at equal intervals, wherein the grating constant of the second grating pattern is larger than that of the first grating pattern;
electroplating again to form a second metal grid line;
the photoresist is removed and the seed layer that is not masked is etched away.
Further, the substrate is a semiconductor substrate.
Further, the step of forming a seed layer on the substrate specifically includes: through an electron beam evaporation technology, a 1-5 nanometer Ti metal layer is firstly deposited on a substrate, and then a 3-15 nanometer Au metal layer is deposited on the Ti metal layer.
Further, the forming of the first metal gate line by electroplating specifically includes: the electroplated metal is gold, and the thickness of the first metal grid line is 0.8-2 microns.
Further, the grating constant of the first grating pattern is 1 micron to 5 microns, and the grating constant of the second grating pattern is 2 microns to 10 microns.
Further, the forming of the second metal gate line by electroplating specifically includes: the electroplated metal is gold, and the thickness of the second metal grid line is 2-5 microns.
Further, acetone is used for removing the photoresist.
Further, the etching to remove the unmasked seed layer uses reactive ion etching.
The invention also provides a non-uniform height metal grating, comprising:
a substrate;
a seed layer disposed on the substrate;
the first metal grid lines are arranged on the seed layer and distributed at equal intervals;
and the second metal grid lines are arranged on the seed layer at equal intervals, the grating constant of the second metal grid lines is greater than or equal to that of the first metal grid lines, and the thickness of the second metal grid lines is greater than that of the first metal grid lines.
Further, the grating constant of the first metal grating is 1 micron to 5 microns, and the grating constant of the second metal grating is 2 microns to 10 microns.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a double-period metal grating with unequal heights, which is not only periodically arranged in the horizontal direction and is divided into a first grid line and a second grid line with different heights in the vertical direction, but also periodically arranged, so that the amplitude and the phase of light are simultaneously regulated and controlled in the process of passing through the grating, and the focusing effect of the grating is stronger. And more optimized parameters can be adjusted more flexibly according to practical application, so that better optical performance is achieved.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a non-uniform height metal grating according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a seed layer manufactured in step 1 of the manufacturing method according to the embodiment of the invention;
FIG. 3 is a schematic illustration of step 2 of the fabrication method of the present invention with photoresist applied;
fig. 4 is a schematic diagram of step 2 of the manufacturing method of the embodiment of the invention for manufacturing the first grating pattern;
fig. 5 is a schematic diagram of forming a first metal gate line in step 3 of the method of manufacturing according to the embodiment of the invention;
FIG. 6 is a schematic illustration of step 4 of the method of fabricating an embodiment of the present invention with photoresist applied;
fig. 7 is a schematic diagram of step 4 of the manufacturing method of the embodiment of the invention for manufacturing a second grating pattern;
fig. 8 is a schematic view of a second metal gate line formed in step 5 of the fabrication method of the present invention;
FIG. 9 is a schematic diagram of method step 6 of removing photoresist according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of the method of step 6 of removing the seed layer by etching;
FIG. 11 is a plan view of a non-uniform metal grating according to an embodiment of the present invention after fabrication;
fig. 12 is a 30 ° angle of inclination view of a non-uniform metal grating according to an embodiment of the present invention after fabrication.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 to 12, a method for manufacturing a non-uniform metal grating in this embodiment includes:
manufacturing a seed layer 200 on the substrate 100;
coating a photoresist 310 on the seed layer 200, and performing grating exposure and grating development on the photoresist 310 coated on the seed layer 200 to form the first grating pattern so as to expose the seed layer 200;
forming a first metal gate line 410 by electroplating;
electroplating again to form a second metal gate line 420;
the photoresists 310, 320 are removed and the unmasked seed layer 200 is etched away.
In this embodiment, the height of the photoresist 310 and the pitch of the first grating pattern may be selected according to actual needs.
Further, on the basis of the above technical solution, the substrate 100 is a semiconductor substrate. In this embodiment mode, the semiconductor substrate material may be silicon, quartz, or multi-component glass.
Further on the basis of the above technical solution, the manufacturing of the seed layer 200 on the substrate 100 specifically includes: by the electron beam evaporation technology, a 1-5 nm Ti metal layer is deposited on a substrate 100, and then a 3-15 nm Au metal layer is deposited on the Ti metal layer.
Further on the basis of the above technical solution, the forming of the first metal gate line 410 by electroplating specifically includes: the electroplated metal is gold, and the thickness of the first metal grid line 410 is 0.8 to 2 micrometers. In this embodiment, the height of the first metal gate line 410 can be adjusted as required under the condition that the height of the first metal gate line 410 is less than the height of the photoresist 310.
On the basis of the technical scheme, the grating constant of the first grating pattern is 1-5 microns, and the grating constant of the second grating pattern is 2-10 microns. In the present embodiment, the duty ratios of the first and second grating patterns may be arbitrarily adjusted according to design.
Further on the basis of the above technical solution, the forming of the second metal gate line 420 by electroplating specifically includes: the electroplated metal is gold, and the thickness of the second metal grid line 420 is 2 to 5 micrometers. In this embodiment, the height of the first metal gate line 410 is less than that of the second metal gate line 420, and the height of the second metal gate line 420 is less than or equal to that of the photoresist 310.
On the basis of the above technical solution, acetone is used for removing the photoresists 310 and 320.
On the basis of the above technical scheme, further, the seed layer 200 is removed by etching by using reactive ion etching.
As shown in fig. 10 to 12, a non-uniform metal grating according to this embodiment includes:
a substrate 100;
a seed layer 200 disposed on the substrate;
first metal gate lines 410 disposed on the seed layer 200 at equal intervals;
and second metal gate lines 420 arranged on the seed layer 200 at equal intervals, wherein a grating constant of the second metal gate lines 420 is greater than or equal to a grating constant of the first metal gate lines 410, and a thickness of the second metal gate lines 420 is greater than a thickness of the first metal gate lines 410.
On the basis of the above technical solution, further, the grating constant of the first metal grating is 1 to 5 microns, and the grating constant of the second metal grating is 2 to 10 microns.
Example 1:
a method for manufacturing a non-uniform height metal grating, a flow chart is shown in fig. 1.
S1, a seed layer 200 is formed on the substrate 100.
As shown in fig. 2, a 5 nm Ti metal layer is deposited on a substrate 100 first, and then a 10 nm Au metal layer is deposited on the titanium metal layer by an electron beam evaporation technique.
S2, coating the photoresist 310 on the seed layer 200, and performing grating exposure and grating development on the photoresist 310 coated on the seed layer 200 to form the first grating pattern, so as to expose the seed layer 200.
As shown in fig. 3, a photoresist 310 is coated on the seed layer 200, and the seed layer 200 is exposed by exposing the photoresist 310 to light using AZ6130 photoresist with a thickness of 3 μm for 3 seconds to form a first grating pattern with an equal pitch of 2 μm as shown in fig. 4.
S3, forming a first metal gate line 410 by electroplating.
And putting the substrate into a gold electroplating solution for electroplating.
The electroplating parameters are as follows: the current is 10 milliamperes, the temperature is 40 ℃, and the electroplating speed is 50 nanometers per minute. Electroplating is carried out for 30 minutes to form a first metal grid line 410 with the thickness of 1.5 microns, as shown in figure 5.
And S4, coating photoresist 320 on the first grating pattern, and manufacturing a second grating pattern which is arranged at equal intervals, wherein the grating constant of the second grating pattern is larger than that of the first grating pattern.
And taking out the substrate and drying the substrate by blowing, as shown in fig. 6, coating the photoresist 320 on the first grating pattern, wherein the photoresist 320 is AZ6130 photoresist.
And exposing for 3.5s, overlaying the grating, periodically shielding the first grating pattern, and making a second grating pattern with 3 microns equal spacing, as shown in fig. 7.
And S5, electroplating again to form a second metal grid line 420.
The substrate is again placed in a gold plating solution for plating.
The electroplating parameters are as follows: the current is 10 milliamperes, the temperature is 40 ℃, and the electroplating speed is 100 nanometers per minute. Electroplating is carried out for 15 minutes to form a second metal grid line 420 with the thickness of 1.5 microns, as shown in figure 8.
S6, removing the photoresist 310 and 320, and etching to remove the seed layer 200.
After the photoresist 310, 320 is removed, the seed layer 200 that is not masked is etched clean by using an ion beam etching beam with an energy of 500 ev for 2 minutes, as shown in fig. 10. Fig. 11 is a plan view of the unequal-height metal grating manufactured in the present embodiment. Fig. 12 is a 30 ° inclination angle observation diagram of the unequal height metal grating manufactured by the present embodiment.
The above-described embodiments are merely illustrative of the preferred embodiments of the present invention and do not limit the spirit and scope of the present invention. Various modifications and improvements of the technical solutions of the present invention may be made by those skilled in the art without departing from the design concept of the present invention, and the technical contents of the present invention are all described in the claims.
Claims (10)
1. A method for manufacturing unequal height metal gratings is characterized by comprising the following steps:
manufacturing a seed layer on a substrate;
coating photoresist on the seed layer, and carrying out grating exposure and grating development on the photoresist coated on the seed layer to form a first grating pattern so as to expose the seed layer;
forming a first metal grid line by electroplating;
coating photoresist on the first grating pattern, and manufacturing a second grating pattern which is arranged at equal intervals, wherein the grating constant of the second grating pattern is larger than that of the first grating pattern;
electroplating again to form a second metal grid line;
the photoresist is removed and the seed layer that is not masked is etched away.
2. The method of manufacturing of claim 1, wherein the substrate is a semiconductor substrate.
3. The method of claim 1, wherein the step of forming a seed layer on the substrate comprises: through an electron beam evaporation technology, a 1-5 nanometer Ti metal layer is firstly deposited on a substrate, and then a 3-15 nanometer Au metal layer is deposited on the Ti metal layer.
4. The method of claim 1, wherein the forming of the first metal gate line by electroplating specifically comprises: the electroplated metal is gold, and the thickness of the first metal grid line is 0.8-2 microns.
5. The method of claim 1, wherein the first grating pattern has a grating constant of 1 to 5 microns and the second grating pattern has a grating constant of 2 to 10 microns.
6. The method of claim 1, wherein the forming of the second metal gate line by electroplating comprises: the electroplated metal is gold, and the thickness of the second metal grid line is 2-5 microns.
7. The method of claim 1, wherein the removing the photoresist comprises acetone.
8. The method of claim 1, wherein etching away the seed layer is by reactive ion etching.
9. An unequal height metal grating, characterized in that the unequal height metal grating is manufactured by the method for manufacturing the unequal height metal grating according to any one of claims 1-8;
the unequal height metal grating comprises:
a substrate;
a seed layer disposed on the substrate;
the first metal grid lines are arranged on the seed layer and distributed at equal intervals;
and the second metal grid lines are arranged on the seed layer at equal intervals, the grating constant of the second metal grid lines is greater than or equal to that of the first metal grid lines, and the thickness of the second metal grid lines is greater than that of the first metal grid lines.
10. The unequal-height metal grating of claim 9, wherein the grating constant of the first metal gridlines is 1 micron to 5 microns and the grating constant of the second metal gridlines is 2 microns to 10 microns.
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| CN111090176B (en) * | 2020-01-08 | 2021-11-30 | 上海交通大学 | Metal grating polarization beam splitter with asymmetric reflection |
| CN111766654A (en) * | 2020-06-16 | 2020-10-13 | 复旦大学 | Gold grating for realizing ultrahigh extinction ratio coefficient and preparation method thereof |
| CN116609871B (en) * | 2023-07-19 | 2023-10-03 | 上海鲲游科技有限公司 | Manufacturing method of unequal-height straight tooth grating |
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| JP2007033746A (en) * | 2005-07-26 | 2007-02-08 | Seiko Epson Corp | Method for manufacturing optical element, optical element, and projection type display device |
| CN105785493A (en) * | 2016-05-09 | 2016-07-20 | 深圳市华星光电技术有限公司 | Metal grating polaroid and manufacturing method therefor |
| CN105938214A (en) * | 2016-07-04 | 2016-09-14 | 深圳市华星光电技术有限公司 | Subwavelength grating polarizer and manufacturing method thereof |
| CN107290813A (en) * | 2017-07-07 | 2017-10-24 | 大连理工大学 | Infrared double-layer nanometer metal grating and preparation method thereof in one kind |
| CN108873133A (en) * | 2018-05-23 | 2018-11-23 | 中山大学 | A kind of one-dimensional double-level-metal grating and preparation method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007033746A (en) * | 2005-07-26 | 2007-02-08 | Seiko Epson Corp | Method for manufacturing optical element, optical element, and projection type display device |
| CN105785493A (en) * | 2016-05-09 | 2016-07-20 | 深圳市华星光电技术有限公司 | Metal grating polaroid and manufacturing method therefor |
| CN105938214A (en) * | 2016-07-04 | 2016-09-14 | 深圳市华星光电技术有限公司 | Subwavelength grating polarizer and manufacturing method thereof |
| CN107290813A (en) * | 2017-07-07 | 2017-10-24 | 大连理工大学 | Infrared double-layer nanometer metal grating and preparation method thereof in one kind |
| CN108873133A (en) * | 2018-05-23 | 2018-11-23 | 中山大学 | A kind of one-dimensional double-level-metal grating and preparation method thereof |
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