CN106629579A - Preparation method of micro-electromechanical device - Google Patents
Preparation method of micro-electromechanical device Download PDFInfo
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- CN106629579A CN106629579A CN201510740434.XA CN201510740434A CN106629579A CN 106629579 A CN106629579 A CN 106629579A CN 201510740434 A CN201510740434 A CN 201510740434A CN 106629579 A CN106629579 A CN 106629579A
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- silicon chip
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
Abstract
The invention discloses a preparation method of a micro-electromechanical device. The preparation method comprises the steps of graphing silicon wafers, and forming a plurality of photoresist masks on surfaces of the silicon wafers, wherein exposure areas for the silicon wafers are formed among the plurality of the photoresist masks, metal layers are deposited at certain sides, having the photoresist masks, of the silicon wafers, and each of the metal layers includes a 3nm-8nm thick Ag layer and a 8nm-12nm thick Au layer which are arranged in a laminated manner; and immersing the silicon wafers having the metal layers and the photoresist masks into an etching solution, so that the exposure areas are etched, thereby forming the micro-electromechanical device. According to the preparation method of the micro-electromechanical device, by adjusting components and thicknesses of the metal layers as well as a content of each component in the etching solution, the micro-electromechanical device having a millimeter size is prepared and is obtained, and the obtained micro-electromechanical device further has the characteristics of a high depth-to-width ratio and a vertical sidewall; and according to the preparation method of the micro-electromechanical device disclosed by the invention, the shortage of non-uniform heat conduction or failure to obtain the vertical sidewall of the preparation method of the micro-electromechanical device in the prior art is overcome.
Description
Technical field
The invention belongs to micro electro mechanical device manufacturing technology field, specifically, is related to a kind of micro electro mechanical device
Preparation method.
Background technology
Silicon-based microelectromechanical system has been widely applied in military affairs, biomedicine and optical field at present.
In the body silicon processing technology of micro electro mechanical device, deep silicon etching technique is high by its high-aspect-ratio, perpendicularity
Advantage still occupies leading position；But the higher Heat Conduction Problems one in etching process of equipment use cost
It is directly the biggest factor for affecting deep silicon etching effect, especially at thermal conductive surface, has higher step height；Work as etching
Area is larger, and for preparing during large-sized micro electro mechanical device, Heat Conduction Problems are just more highlighted, and often result in table
The protecting colloid rupture in face is even etched totally in advance, and common wet corrosion technique is due to material itself
Crystal orientation reason makes which obtain vertical side wall.Therefore, find a kind of suitable large-sized micro electro mechanical device
Prepare, and can realize that the method for the high performance of high-aspect-ratio and perpendicularity is problem demanding prompt solution.
The content of the invention
To solve the problems, such as above-mentioned prior art, the invention provides a kind of preparation side of micro electro mechanical device
Method, the content of each component in component and thickness and etching liquid of the preparation method by adjustment metal level,
The micro electro mechanical device with mm size is prepared.
In order to reach foregoing invention purpose, following technical scheme is present invention employs：
A kind of preparation method of micro electro mechanical device, including：Graphical silicon chip, forms on the surface of the silicon chip
Some photoresist masks；Wherein, the exposed region of the silicon chip is formed between some photoresist masks；
The side deposited metal layer with photoresist mask of the silicon chip；Wherein, the metal level includes that lamination sets
The Au layers of the Ag layers and 8nm～12nm thickness of the 3nm～8nm thickness put；By described with metal level and light
In the silicon chip immersion etching liquid of photoresist mask, the exposed region is etched, and forms micro electro mechanical device.
Further, the metal level includes that lamination successively is arranged on the photoresist mask and the silicon chip
The Au layers of the Ag layers and 10nm thickness of the 5nm thickness on the surface of exposed region.
Further, the etching liquid includes Fluohydric acid. and hydrogen peroxide；Wherein, in the etching liquid,
The mass fraction of the Fluohydric acid. is 20%～23%, and the mass fraction of the hydrogen peroxide is 10%～12%.
Further, in the etching liquid, the mass fraction of the Fluohydric acid. is 22%, the peroxidating
The mass fraction of hydrogen is 11%.
Further, the graphical silicon chip step is specifically included：The coating photoresist layer on the silicon chip；
Photolithographic exposure is carried out to the photoresist layer, some photoresist masks is formed on the surface of the silicon chip.
Further, the thickness of the photoresist layer is 1 μm～2 μm.
Further, the photolithographic exposure time of the photoresist layer is 5.5s～7.5s.
Further, before coating photoresist layer on the silicon chip, process is cleaned to the silicon chip；
Wherein, the method for cleaning treatment is specifically included：The silicon chip is sequentially placed into into acetone, ethanol and deionized water
It is middle to be cleaned by ultrasonic 5min～10min respectively；The silicon chip is placed in the mixed solution of concentrated sulphuric acid and hydrogen peroxide
Carry out inorganic cleaning 15min～20min；Wherein, the ratio of the volume of the concentrated sulphuric acid and the hydrogen peroxide is
3:1；Use N2Dry up the silicon chip.
Further, the silicon chip with metal level and photoresist mask is being immersed in the etching liquid it
Before, 30s～60s in the immersion of the silicon chip with the metal level and photoresist mask buffering etching liquid spends
N is used after ionized water cleaning2Dry up.
Further, the buffering etching liquid includes Fluohydric acid. and ammonium fluoride；Wherein, in the buffering etching
In liquid, the ratio of the mass fraction of the Fluohydric acid. and the ammonium fluoride is 1:5.
In component and thickness and etching liquid of the present invention by adjustment metal level, the content of each component, prepares
The micro electro mechanical device with mm size is obtained；At the same time, preparation in accordance with the present invention is obtained
The characteristics of micro electro mechanical device etched hole therein has high-aspect-ratio and vertical sidewall.With it is of the prior art
Dry method deep silicon etching is compared, and is overcome and is caused the destroyed unfavorable condition of protecting colloid due to heat conduction inequality；Together
When compared to wet corrosion technique of the prior art, it is thus also avoided that as silicon chip crystal orientation leads to not be hung down
The problem of straight sidewall.
Description of the drawings
By combining the following description that accompanying drawing is carried out, above and other aspect of embodiments of the invention, feature
Will become clearer from advantage, in accompanying drawing：
Fig. 1 is the structural representation of the silicon chip for being coated with photoresist layer according to an embodiment of the invention；
Fig. 2 is the structural representation of the silicon chip for being coated with photoresist mask according to an embodiment of the invention；
Fig. 3 is that the structure of the silicon chip for being coated with metal film and photoresist mask according to an embodiment of the invention is shown
It is intended to；
Fig. 4 is the micro electro mechanical device for being coated with metal film and photoresist mask according to an embodiment of the invention
Structural representation；
Fig. 5 is the structural representation of micro electro mechanical device according to an embodiment of the invention；
Fig. 6 is the scanning electron microscope (SEM) photograph of micro electro mechanical device according to an embodiment of the invention；
Fig. 7 is the scanning electron microscope (SEM) photograph of the partial enlargement of the a-quadrant of Fig. 6.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to describing embodiments of the invention in detail.However, it is possible to many different
Form is implementing the present invention, and the present invention should not be construed as limited to the specific embodiment that illustrates here.
On the contrary, there is provided these embodiments are for the principle and its practical application of explaining the present invention, so that this area
Others skilled in the art it will be appreciated that various embodiments of the present invention and being suitable for the various of specific intended application and repairing
Change.In the accompanying drawings, for the sake of clarity, the shape and size of element, and identical label can be exaggerated
Same or analogous element will be used to indicate all the time will.
Embodiment of the invention discloses that a kind of preparation method of the micro electro mechanical device of large scale (mm size),
At the same time, in preparation process, overcome the preparation process of large-sized micro electro mechanical device in prior art
Present in Heat Conduction Problems, while the etched hole in making the micro electro mechanical device for preparing there is vertical sidewall with
And the characteristics of high-aspect-ratio.The preparation method of the micro electro mechanical device to the present embodiment is carried out into detailed retouching below
State, comprised the steps according to the preparation method of the micro electro mechanical device of the present embodiment.
Step one：Process is cleaned to silicon chip 1a.Specifically, using acetone, ethanol and go successively first
Ionized water is cleaned by ultrasonic to silicon chip 1a, and scavenging period is 5min；Then volume ratio is utilized to be 3:1
The mixed solution of concentrated sulphuric acid and hydrogen peroxide carries out inorganic cleaning 15min to the silicon chip 1a；To finally pass through
Silicon chip 1a N after cleaning2Dry up.
Cleaning treatment described in step one to silicon chip 1a, acetone, ethanol and deionized water to silicon chip 1a successively
The time being cleaned by ultrasonic generally individually is controlled in 5min～10min, and utilizes the concentrated sulphuric acid and mistake
The mixed solution of hydrogen oxide silicon chip 1a is carried out inorganic cleaning time general control be 15min～20min i.e.
Can, impurity is waited to remove the organic and inorganic of the silicon chip 1a surfaces.
Step 2：The light of 1 μm～2 μ m-thick of spin coating on a wherein surface of the silicon chip 1a through cleaning treatment
Photoresist, forms photoresist layer 2a, as shown in Figure 1 on the surface of silicon chip 1a.
In the present embodiment, the photoresist is AZ5214 type photoresists；Preferably, in order that follow-up photoetching
The effect of exposure more preferably, will be covered with the silicon chip 1a of the photoresist layer 2a front baking at 95 DEG C and process 90s～100s.
Step 3：Photolithographic exposure is carried out to the photoresist layer 2a using litho machine, pre-prepared microcomputer is obtained
The figure of electrical part 1；That is, part photoresist layer 2a is removed to form pre-prepared micro electro mechanical device
1 figure, and remaining photoresist layer 2a then retains to form photoresist mask 2.Thus, by the photoetching
The area of coverage of the part formation silicon chip 1a that glue mask 2 is covered, and do not covered by the photoresist mask 2,
Part between the photoresist mask 2 then forms the exposed region of the silicon chip 1a, as shown in Figure 2.
In the present embodiment, the photolithographic exposure time is 6s, but the present invention is not restricted to this, usually, control
The photolithographic exposure time processed is that 5.5s～7.5s can meet requirement.
Certainly, after photolithographic exposure is carried out to the photoresist layer 2a, also need for the silicon chip 1a to be placed in development
Developed in liquid, just can be formed the figure of pre-prepared micro electro mechanical device 1 completely.In the present embodiment,
The time that the silicon chip 1a develops in the developer solution is 30s～50s.Then, the silicon chip of development will be passed through
1a is rinsed with substantial amounts of deionized water, and uses N2Carry out drying up process.
Step 4：Will be covered with photoresist mask 2 silicon chip 1a be placed in buffering etching liquid (abbreviation BOE is molten
Liquid) middle immersion 30s or so, to remove the natural oxidizing layer on the silicon chip 1a surfaces.
In the present embodiment, the BOE solution is 5:1BOE solution, that is to say, that in the BOE
In solution, the mass fraction of Fluohydric acid. and ammonium fluoride is respectively 6% and 30%, and the ratio of mass fraction is 1:5；
At the same time, it is coated with the time general control that the silicon chip 1a of photoresist mask 2 is soaked in BOE solution
For 30s～60s.
Step 5：The side deposition that be coated with photoresist mask 2 of the deposited by electron beam evaporation method in the silicon chip 1a
Equal formation of deposits metal level 3 on the surface of the exposed region of metal level 3, the photoresist mask 2 and silicon chip 1,
As shown in Figure 3.
What deserves to be explained is, metal level 3 includes that lamination is arranged on the exposed region of photoresist mask 2 and silicon chip 1a
Surface on the thick Ag layers 31 of 3nm～8nm and the thick Au layers 32 of 8nm～12nm；Preferably,
The thickness of Ag layers 31 is 5nm, and the thickness of Au layers 32 is 10nm, and Ag layers 21 and Au layers 32
Lamination is arranged on the surface of the exposed region of the photoresist mask 2 and silicon chip 1a successively.
Step 6：The silicon chip 1a that will be covered with photoresist mask 2 and metal level 3 is placed in etching liquid and soaks 14
The exposed region of h, silicon chip 1a is etched removal, obtains micro electro mechanical device 1, as shown in Figure 4.
In the present embodiment, etching liquid is by 40% (wt%) hydrofluoric acid aqueous solution, 30% (wt%) peroxidating
Aqueous solution of hydrogen and deionized water are mixed, 40% (wt%) hydrofluoric acid aqueous solution, 30% (wt%)
The volume ratio of aqueous hydrogen peroxide solution and deionized water is 41:20:139；That is, in the etching liquid
In, the mass fraction of Fluohydric acid. is 22.2%, and the mass fraction of hydrogen peroxide is 10.8%；Usually, control
In etching liquid, the mass fraction of Fluohydric acid. is 20%～23%, and the mass fraction of hydrogen peroxide for 10%～12% is
Can.
One electrochemical reaction, the electrochemical reaction its essence is with the process of above-mentioned etching liquid etching silicon wafer 1a
Net reaction such as formula (1) shown in：
Si+HF+H2O2→H2SiF6+H2O+H2 (1)
In etching process, equivalent to micro cathode, which can promote the decomposition of oxidants hydrogen peroxide to metal level 3,
The H that hydrogen peroxide is produced after decomposing+In the silicon chip 1a that can be injected under metal level 3 and stimulate the silicon chip 1a
Hole is produced, so that the exposed region of silicon chip 1a is oxidized, and the Fluohydric acid. in etching liquid then may proceed to corruption
Silicon chip 1a after erosion is oxidized, so as to reach the purpose of etching exposed region；That is, in above-mentioned exposed region
Corrosion during, the metal in metal level 3 serves the effect of metal catalytic to above-mentioned electrochemical reaction,
And other silicon chip 1a for being not covered with metal level 3 then will not be etched away by the etching liquid.
In the present embodiment, the micro electro mechanical device 1 for preparing has etched hole 11；Wherein, etched hole 11
Depth by controlling etch period (soak time i.e. in etching liquid) and etch rate controlling,
And its width is then by the width of the metal level 3 positioned at exposed region determining.As exposed region is gradually etched
Remove, etched hole 11 is gradually deepened, and the metal level 3 being located on exposed region surface is gradually moved down, and all the time
It is maintained at the bottom of etched hole 11 and contacts with silicon chip 1a.
Step 7：Photoresist mask 2 and metal level 3 are peeled off, is obtained micro- as shown in Figure 5
The structure of electromechanical device 1.
The micro electro mechanical device 1 prepared to the present embodiment has carried out sem test, test result difference
As shown in Figure 6 and Figure 7.In figure 6 and figure 7, can be clearly seen that the micro electro mechanical device 1 is in
Mm size, belongs to large-sized micro electro mechanical device 1；At the same time, it can be seen that the micro electro mechanical device 1
In etched hole 11 have high-aspect-ratio the characteristics of, be conducive to improve the micro electro mechanical device 1 surface area, together
When the etched hole 11 also have vertical side wall.
What deserves to be explained is, the preparation method of the micro electro mechanical device of large scale (mm size) (is received with small size
Rice or micron-scale) the preparation method of micro electro mechanical device compare, be primarily present etching directivity and etched
Spreading effect in journey is difficult to the problem held.So-called etching directivity refers to etching perpendicularity problem, is carving
During erosion, the verticality of side wall of the etched hole 11 in micro electro mechanical device 1 occurs deviation；It is so-called etched
Spreading effect in journey is referred in etching process as the hole of catalytic effect generation is excessive, is diffused into around
Silicon chip 1a among, so as to cause the silicon chip 1a (i.e. the area of coverage of silicon chip 1a) of nontarget area still by
The phenomenon of etching.In the present embodiment, the Ag layers 31 of the 3nm～8nm thickness for being arranged with lamination and 8nm～12
Material of the nm thick Au layers 32 as metal level 3, meanwhile, by the content for adjusting each component in etching liquid
For 20%～23% (wt%) Fluohydric acid. and 10%～12% (wt%) hydrogen peroxide, preparation has been reached with height
The micro electro mechanical device 1 of the etched hole 11 of depth-to-width ratio and vertical sidewall, the preparation method of the micro electro mechanical device 1
Not only overcome present in dry method deep silicon etching as heat conduction inequality causes the destroyed bad feelings of protecting colloid
Condition, while also avoid wet corrosion technique as silicon chip crystal orientation leads to not the problem of acquisition vertical sidewall.
To verify the thickness of Ag layers 31 and Au layers 32 in the metal level 3 of the present embodiment, and in etching liquid
Impact of the content of each component to preparation result, being respectively directed to above-described embodiment has carried out comparative example 1 and contrast
Example 2.
Comparative example 1
In the description of comparative example 1, will not be described here with the something in common of above-described embodiment, only description with
The difference of above-described embodiment.Comparative example 1 with the difference of above-described embodiment is, in step 5,
Metal level 3 includes the thick Ag of the 5nm that lamination is arranged on the surface of photoresist mask 2 and exposed region successively
31 and 5nm thick Au layers 32 of layer；Remaining step with reference to described in above-described embodiment, is prepared
Micro electro mechanical device 1.
By testing to the micro electro mechanical device 1 in the comparative example 1, find micro- in this comparative example 1
During etching, spreading effect is reduced electromechanical device 1, and the etch rate of silicon chip 1a declines, micro electronmechanical
In device 1, the side perpendicularity of etched hole 11 is poor.Therefore say, 31 He of Ag layers as metal level 3
The thickness of Au layers 32 is played to the side wall that it is good that the micro electro mechanical device 1 for finally preparing is obtained in that perpendicularity
Crucial effect.
Comparative example 2
In the description of comparative example 2, will not be described here with the something in common of above-described embodiment, only description with
The difference of above-described embodiment.Comparative example 2 with the difference of above-described embodiment is, in step 6,
In the etching liquid, the mass fraction of Fluohydric acid. is 8.6%, and the mass fraction of hydrogen peroxide is 33.1%,
Etching liquid described in this comparative example 2 is by 40% (wt%) hydrofluoric acid aqueous solution and 30% (wt%) aquae hydrogenii dioxidi
Solution and deionized water are mixed, (wt%) hydrofluoric acid aqueous solution, 30% (wt%) 40% during mixing
The volume ratio of aqueous hydrogen peroxide solution and deionized water is 16:62:122；Remaining step is with reference to above-mentioned enforcement
Described in example, micro electro mechanical device 1 has been prepared.
By testing to the micro electro mechanical device 1 in the comparative example 2, find micro- in this comparative example 2
During etching, substantially, the surface of micro electro mechanical device 1 is destroyed spreading effect electromechanical device 1, micro-
The perpendicularity of the side wall of the etched hole 11 in electromechanical device 1 is poor.Therefore say, in etching liquid, each component contains
Measure the micro electro mechanical device 1 to finally preparing and be obtained in that good pattern plays the effect of key.
In component and thickness and etching liquid of the present invention by adjustment metal level, the content of each component, prepares
The micro electro mechanical device with mm size is obtained；At the same time, preparation in accordance with the present invention is obtained
The characteristics of micro electro mechanical device etched hole therein has high-aspect-ratio and vertical sidewall.With it is of the prior art
Dry method deep silicon etching is compared, and is overcome when preparing large scale micro electro mechanical device as heat conduction inequality causes Protection glue
The destroyed unfavorable condition of body；Simultaneously compared with wet corrosion technique of the prior art, it is thus also avoided that due to
Silicon chip crystal orientation leads to not the problem for obtaining vertical sidewall.In addition, the system of micro electro mechanical device of the invention
Preparation Method, process is simple, cost are relatively low.
Although illustrating and describing the present invention with reference to specific embodiment, those skilled in the art will
Understand：In the case of without departing from the spirit and scope of the present invention limited by claim and its equivalent,
Can here carry out the various change in form and details.
Claims (10)
1. a kind of preparation method of micro electro mechanical device, it is characterised in that include：
Graphical silicon chip, forms some photoresist masks on the surface of the silicon chip；Wherein, some light
The exposed region of the silicon chip is formed between photoresist mask；
In the side deposited metal layer with photoresist mask of the silicon chip；Wherein, the metal level includes
The Au layers of the Ag layers and 8nm～12nm thickness of 3nm～8nm thickness that lamination is arranged；
By in the immersion of the silicon chip with the metal level and photoresist mask etching liquid, the exposed region is etched,
Form micro electro mechanical device.
2. preparation method according to claim 1, it is characterised in that the metal level includes folding successively
The Ag layers and 10 of the 5nm thickness on the surface of the exposed region that layer is arranged on the photoresist mask and the silicon chip
Nm thick Au layers.
3. preparation method according to claim 1, it is characterised in that the etching liquid includes Fluohydric acid.
And hydrogen peroxide；Wherein, in the etching liquid, the mass fraction of the Fluohydric acid. is 20%～23%, institute
The mass fraction for stating hydrogen peroxide is 10%～12%.
4. preparation method according to claim 3, it is characterised in that in the etching liquid, described
The mass fraction of Fluohydric acid. is 22%, and the mass fraction of the hydrogen peroxide is 11%.
5. according to the arbitrary described preparation method of Claims 1-4, it is characterised in that the patterned silicon
Piece step is specifically included：
The coating photoresist layer on the silicon chip；
Photolithographic exposure is carried out to the photoresist layer, some photoresist masks is formed on the surface of the silicon chip.
6. preparation method according to claim 5, it is characterised in that the thickness of the photoresist layer is
1 μm～2 μm.
7. preparation method according to claim 5, it is characterised in that the photoetching of the photoresist layer exposes
The light time is 5.5s～7.5s.
8. preparation method according to claim 5, it is characterised in that be coated with photoetching on the silicon chip
Before glue-line, process is cleaned to the silicon chip；Wherein, the method for cleaning treatment is specifically included：
The silicon chip is sequentially placed in acetone, ethanol and deionized water and is cleaned by ultrasonic 5min～10min respectively；
The silicon chip is placed in the mixed solution of concentrated sulphuric acid and hydrogen peroxide carries out inorganic cleaning 15min～20
min；Wherein, the ratio of the volume of the concentrated sulphuric acid and the hydrogen peroxide is 3:1；
Use N2Dry up the silicon chip.
9. preparation method according to claim 8, it is characterised in that by it is described with metal level and
Before the silicon chip of photoresist mask is immersed in the etching liquid, by described with metal level and photoresist mask
30s～60s in silicon chip immersion buffering etching liquid, uses N after deionized water cleaning2Dry up.
10. preparation method according to claim 9, it is characterised in that the buffering etching liquid includes
Fluohydric acid. and ammonium fluoride；Wherein, in the buffering etching liquid, the matter of the Fluohydric acid. and the ammonium fluoride
The ratio of amount fraction is 1:5.
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| CN201510740434.XA CN106629579A (en) | 2015-11-03 | 2015-11-03 | Preparation method of micro-electromechanical device |
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| CN201510740434.XA CN106629579A (en) | 2015-11-03 | 2015-11-03 | Preparation method of micro-electromechanical device |
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Family
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109103129A (en) * | 2018-08-21 | 2018-12-28 | 中国科学院微电子研究所 | Patterning device and its application method |
| CN112563124A (en) * | 2020-12-10 | 2021-03-26 | 西安电子科技大学 | Preparation method of large-area ultrathin hollowed-out hard mask |
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| CN112563124A (en) * | 2020-12-10 | 2021-03-26 | 西安电子科技大学 | Preparation method of large-area ultrathin hollowed-out hard mask |
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