CN108493104A - Method for etching plasma and plasma etching post-processing approach - Google Patents
Method for etching plasma and plasma etching post-processing approach Download PDFInfo
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- CN108493104A CN108493104A CN201810317249.3A CN201810317249A CN108493104A CN 108493104 A CN108493104 A CN 108493104A CN 201810317249 A CN201810317249 A CN 201810317249A CN 108493104 A CN108493104 A CN 108493104A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Abstract
The present invention provides method for etching plasma and plasma etching post-processing approach, includes the following steps：1）One target material layer to be etched is provided；2）Patterned masking layer is formed in the surface of target material layer to be etched；3）Dry etching is carried out to target material layer to be etched according to Patterned masking layer, to form groove in target material layer to be etched, the inner surface of groove is formed with the first damaging layer；4）Etching post-processing for the first time is carried out using first the first damaging layer of processing gas pair, the inner surface of the rearward recess of etching post-processing for the first time is formed with the second damaging layer；5）Second of etching post-processing is carried out using the second damaging layer of second processing gas pair, the inner surface of second of etching post-processing rearward recess remains the second damaging layer residual layer.The present invention can prevent that the electric property for the semiconductor components and devices to be formed is bad and physical property is bad, and then ensure the reliability of semiconductor components and devices.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, more particularly to a kind of method for etching plasma and plasma
Etch post-processing approach.
Background technology
Because miniaturization, multi-functional and manufacture unit price characteristics, the semiconductor components and devices such as cheap have obtained extensively in electronics industry
General application.But with the method battle array of electronics industry, semiconductor components and devices integrated level increasingly improves, and consequently also causes problems：
For example, plasma damage layer can be formed in the thin-film surface of deposition using after thin film deposition processes and dry etch process
And reaction residual contaminants, and the integrated level of semiconductor components and devices improves, the line width and spacing of the figure in semiconductor components and devices
Reduce, and the height Yu depth-to-width ratio of figure increase in contrast, if in film layer in semiconductor components and devices in the presence of etc. from
Daughter damaging layer and reaction residual contaminants, this will cause the electric property and physical property of semiconductor components and devices prodigious
Harmful effect, and then lead to the reliability decrease of semiconductor components and devices.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of method for etching plasma and
Plasma etching post-processing approach, for solving in semiconductor components and devices in the prior art, there are form after dry etching
Semiconductor components and devices electric property and physical property cause very big caused by plasma damage layer and reaction residual contaminants
Harmful effect, and then the problem of lead to the reliability decrease of semiconductor components and devices.
To achieve the above object and other related purposes, the present invention provide a kind of lithographic method, and the method includes as follows
Step：
1) target material layer to be etched is provided；
2) Patterned masking layer is formed in the surface of the target material layer to be etched, if the Patterned masking layer includes
The dry opening for exposing the target material layer to be etched；
3) dry etching is carried out to the target material layer to be etched according to the Patterned masking layer, with described to be etched
It loses and forms groove in target material layer, the inner surface of the groove is formed with the first damaging layer；
4) it uses the first processing gas to carry out etching for the first time to first damaging layer to post-process, to remove described first
Damaging layer, and the inner surface of the groove is formed with the second damaging layer, second damaging layer after etching post-processing for the first time
Component be different from first damaging layer；
5) it uses second processing gas to carry out second of etching to second damaging layer to post-process, to remove described second
Damaging layer, the inner surface of the groove remains the second damaging layer residual layer after the second etching post-processing, and described the
The component of two damaging layer residual layers is identical to second damaging layer.
Further include following steps after step 5) as a preferred embodiment of the present invention：
6) structure that step 5) obtains is cleaned, the second damaging layer residual layer is completely removed.
As a preferred embodiment of the present invention, step 3) includes that the structure that step 2) obtains is placed in dry etching chamber
Workbench on first stage, according to the Patterned masking layer dry etching is carried out to the target material layer to be etched
Groove inner surface during second stage and dry etching after etching forms the phase III of the first-loss layer；Step
4) include the fourth stage and right for carrying out etching post-processing for the first time to first damaging layer using first processing gas
First damaging layer carries out the interior table of the groove after etching for the first time post-processes during first time etching post-processes
Face forms the 5th stage of second damaging layer, and step 5) includes being carried out to second damaging layer using second processing gas
In 6th stage of second of etching post-processing, step 6) includes the 7th stage for cleaning the structure that step 5) obtains；Its
In, the first stage to the 6th stage executes in the same chamber, and the 7th stage is independently of the first stage
It is individually performed except to the 6th stage.
As a preferred embodiment of the present invention, in step 6), it includes as follows that the structure that step 5) obtains, which is carried out cleaning,
Step：
The second damaging layer residual layer 6-1) is subjected to ashing processing；
6-2) to ashing treated it is described second damage residual layer carry out wet-cleaning, the groove will be remained on
The second damage residual layer stripping of inner surface.
Further include following steps after step 6) as a preferred embodiment of the present invention：
7) Patterned masking layer is removed.
As a preferred embodiment of the present invention, the target material layer to be etched includes insulation material layer and conductive material
One of the group that layer is constituted；In step 2), the opening is bore openings or linear opening.
As a preferred embodiment of the present invention, first damaging layer formed in step 3) includes the first plasma
Damaging layer and the first reaction residue positioned at the first plasma damage layer surface.
As a preferred embodiment of the present invention, second damaging layer formed in step 4) includes the second plasma
Damaging layer and the second reaction residue positioned at the second plasma damage layer surface, the second plasma damage layer
Thickness be less than the first plasma damage layer thickness.
As a preferred embodiment of the present invention, first reaction gas used in step 4) includes carbon-free gas.
As a preferred embodiment of the present invention, first reaction gas further includes chlorine.
Etching for the first time is carried out as a preferred embodiment of the present invention, in step 4) to first damaging layer to post-process
The energy of plasma be less than the energy of the plasma for carrying out dry etching in step 3) to the target material layer to be etched
Amount.
Etching for the first time is carried out as a preferred embodiment of the present invention, in step 4) to first damaging layer to post-process
Plasma charge it is identical as the charge of electrostatic chuck of target material layer to be etched is supported.
As a preferred embodiment of the present invention, the second processing gas used in step 5) is not damaged with described second
Hinder layer to chemically react, the second processing gas removes second damaging layer by way of physical bombardment.
As a preferred embodiment of the present invention, second damaging layer is carried out using second processing gas in step 5)
The energy of the plasma of second of etching post-processing is less than in step 4) to after first damaging layer progress first time etching
The energy of the plasma of processing.
As a preferred embodiment of the present invention, the second processing gas used in step 5) includes halide gas
Body.
The present invention also provides a kind of etching post-processing approach, and described method includes following steps：
1) target material layer to be etched is provided, the surface of the target material layer to be etched is formed with pattern mask
Layer, etching is formed fluted in the target material layer to be etched, and the inner surface of the groove is formed with the first damaging layer；
2) it uses the first processing gas to carry out etching for the first time to first damaging layer to post-process, to remove described first
Damaging layer, and the inner surface of the groove is formed with the second damaging layer after etching post-processing for the first time；
3) second processing gas is used to post-process second damaging layer progress, second of etching, described in the removal of part
Second damaging layer, the inner surface of the groove remains the second damaging layer residual layer after second of etching post-processing.
Further include following steps after step 3) as a preferred embodiment of the present invention：
4) structure that step 3) obtains is cleaned, the second damaging layer residual layer is completely removed.
As a preferred embodiment of the present invention, in step 4), it includes as follows that the structure that step 3) obtains, which is carried out cleaning,
Step：
The second damaging layer residual layer 4-1) is subjected to ashing processing；
4-2) to ashing treated it is described second damage residual layer carry out wet-cleaning, the groove will be remained on
The second damage residual layer stripping of inner surface.
Further include following steps after step 4) as a preferred embodiment of the present invention：
5) Patterned masking layer is removed.
As a preferred embodiment of the present invention, the target material layer to be etched includes insulation material layer and conductive material
One of the group that layer is constituted；First damaging layer includes the first plasma damage layer and is damaged positioned at first plasma
Hinder the first reaction residue of layer surface.
As a preferred embodiment of the present invention, second damaging layer formed in step 2) includes the second plasma
Damaging layer and the second reaction residue positioned at the second plasma damage layer surface, the second plasma damage layer
Thickness be less than the first plasma damage layer thickness.
As a preferred embodiment of the present invention, first reaction gas that is used in step 2) include carbon-free gas and
Chlorine, the second processing gas includes halide gas.
Etching for the first time is carried out as a preferred embodiment of the present invention, in step 2) to first damaging layer to post-process
The energy of plasma be less than in step 1) that etching forms the plasma of the groove in the target material layer to be etched
The energy of body carries out first damaging layer in step 2) charge and the support institute of the plasma of etching post-processing for the first time
The charge for stating the electrostatic chuck of target material layer to be etched is identical.
As a preferred embodiment of the present invention, the second processing gas used in step 3) is not damaged with described second
Hinder layer to chemically react, the second processing gas removes second damaging layer by way of physical bombardment.
As a preferred embodiment of the present invention, second damaging layer is carried out using second processing gas in step 3)
The energy of the plasma of second of etching post-processing is less than in step 2) to after first damaging layer progress first time etching
The energy of the plasma of processing.
As described above, method for etching plasma provided by the invention and plasma etching post-processing approach, have with
Lower advantageous effect：
The present invention by target material layer to be etched carry out dry etching after post-process the step of, can be complete
Full removal is dry-etched in plasma damage layer and reaction residue that target material layer surface to be etched is formed, so as to
It prevents that the electric property for the semiconductor components and devices to be formed is bad and physical property is bad, and then ensures the reliable of semiconductor components and devices
Property.
Description of the drawings
Fig. 1 is shown as the flow chart of the lithographic method provided in the embodiment of the present invention one.
Fig. 2 is shown as the cross section structure of the structure obtained after the step 1) of the lithographic method provided in the embodiment of the present invention one
Schematic diagram.
The cross section structure that Fig. 3 is shown as obtaining after the step 2) of the lithographic method provided structure in the embodiment of the present invention one shows
It is intended to.
The cross section structure that Fig. 4 is shown as obtaining after the step 3) of the lithographic method provided structure in the embodiment of the present invention one shows
It is intended to.
The cross section structure that Fig. 5 is shown as obtaining after the step 4) of the lithographic method provided structure in the embodiment of the present invention one shows
It is intended to.
The cross section structure that Fig. 6 is shown as obtaining after the step 5) of the lithographic method provided structure in the embodiment of the present invention one shows
It is intended to.
The cross section structure that Fig. 7 is shown as obtaining after the step 6) of the lithographic method provided structure in the embodiment of the present invention one shows
It is intended to.
The cross section structure that Fig. 8 is shown as obtaining after the step 7) of the lithographic method provided structure in the embodiment of the present invention one shows
It is intended to.
Fig. 9 is shown as the flow chart of the etching post-processing approach provided in the embodiment of the present invention two.
Figure 10 is shown as the structure obtained after the step 1) of the etching post-processing approach provided in the embodiment of the present invention two
Cross section structure schematic diagram.
Figure 11 obtains cutting for structure after being shown as the step 2) of the etching post-processing approach provided in the embodiment of the present invention two
Face structural schematic diagram.
Figure 12 obtains cutting for structure after being shown as the step 3) of the etching post-processing approach provided in the embodiment of the present invention two
Face structural schematic diagram.
Figure 13 obtains cutting for structure after being shown as the step 4) of the etching post-processing approach provided in the embodiment of the present invention two
Face structural schematic diagram.
Figure 14 obtains cutting for structure after being shown as the step 5) of the etching post-processing approach provided in the embodiment of the present invention two
Face structural schematic diagram.
Reference numerals explanation
10 semiconductor substrates
11 target material layers to be etched
111 grooves
12 Patterned masking layers
121 openings
13 first damaging layers
131 first plasma damage layers
132 first reaction residues
14 second damaging layers
141 second plasma damage layers
142 second reaction residues
143 second damaging layer residual layers
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands the further advantage and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
It please refers to Fig.1 to Figure 14.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram
Mesh, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can be a kind of random change, and its
Assembly layout form may also be increasingly complex.
Embodiment one
Referring to Fig. 1, the present invention provides a kind of lithographic method, the lithographic method includes the following steps：
1) target material layer 11 to be etched is provided；
2) Patterned masking layer 12, the Patterned masking layer 12 are formed in the surface of the target material layer 11 to be etched
Including several, the opening 121 of the target material layer to be etched is exposed；
3) dry etching is carried out to the target material layer 11 to be etched according to the Patterned masking layer 12, with described
Groove 111 is formed in target material layer 11 to be etched, the inner surface of the groove 111 is formed with the first damaging layer 13；
4) it uses the first processing gas to carry out etching for the first time to first damaging layer 13 to post-process, to remove described the
One damaging layer 13, and the inner surface for etching the groove 111 after post-processing for the first time is formed with the second damaging layer 14, described the
The component of two damaging layers 14 is different from first damaging layer 13；
5) it uses second processing gas to carry out second etching to second damaging layer 14 to post-process, to remove described the
Two damaging layers 14, the inner surface of the groove 111 remains the second damaging layer residual layer after second of etching post-processing
143, the component of the second damaging layer residual layer 143 is identical to second damaging layer 14.
In step 1), the S11 steps in please referring to Fig.1 and Fig. 2 provide a target material layer 11 to be etched.
As an example, the target material layer to be etched 11 can be any one insulation material layer and conductive material layer structure
At one of group, for example, the material layer 11 to be etched can be oxide skin(coating), nitride layer, polysilicon layer or metal layer
Etc..
As an example, the target material layer to be etched 11 can be formed in semi-conductive substrate 10 for as shown in Figure 2
The film material plies on surface, at this point, the semiconductor substrate 10 can be wafer etc.；Certainly, in other examples, described to wait for
It can also be directly a substrate to be etched, for example, wafer to be etched to etch target material layer 11.
In step 2), the S12 steps in please referring to Fig.1 and Fig. 3, in the surface shape of the target material layer 11 to be etched
At Patterned masking layer 12, the Patterned masking layer 12 exposes opening for the target material layer to be etched 11 including several
Mouth 121.
(do not show as an example, can one layer of mask layer be formed in the surface of the target material layer 11 to be etched first
Go out), then use photoetching, etching technics that the mask layer is patterned processing to obtain the Patterned masking layer again
12。
As an example, the Patterned masking layer 12 can be graphical photoresist layer or graphical hard mask layer (for example,
Graphical silicon nitride hard mask layer etc.).
As an example, according to actual needs, the opening 121 can be bore openings, or linear opening.
In step 3), the S13 steps in please referring to Fig.1 and Fig. 4, according to the Patterned masking layer 12 to described to be etched
It loses target material layer 11 and carries out dry etching, to form groove 111, the groove in the target material layer 11 to be etched
111 inner surface is formed with the first damaging layer 13.
As an example, the structure that can obtain step 2) is placed in a plasma etching apparatus to the mesh to be etched
It marks material layer 11 and carries out dry etching.Specifically, being formed by being passed through etching gas in the plasma etching apparatus
Gas ions to the target material layer 11 to be etched to carry out dry method.The used etching gas can be according to described to be etched
The specific material composition of erosion target material layer 11 is selected, the specific material composition according to the target material layer 11 to be etched
How selective etching gas dawn known to those skilled in the art, be not repeated herein.
During dry etching, since the plasma that etching gas is formed has higher energy, etching gas meeting
React removal with the larger speed bombardment target material layer 11 to be etched and with the target material layer 11 to be etched
The part target material layer 11 to be etched forms the groove 111, should during can formation 111 side wall of the groove and
11 inside of target material layer to be etched of bottom and inner surface, which are formed, has certain thickness first damaging layer 13, such as Fig. 4
It is shown, first damaging layer 13 may include due to the effect for the plasma that etching gas is formed and formed have lattice
It is being formed in the first plasma damage layer 131 and reaction process of the defects of damage, remain on the groove 111 to be formed
First reaction residue 132 of inner surface.
In step 4), the S14 steps in please referring to Fig.1 and Fig. 5, using the first processing gas to first damaging layer
13 carry out etching post-processing for the first time, to remove first damaging layer 13；And the groove after post-processing is etched for the first time
11 inner surface is formed with the second damaging layer 14, and the component of second damaging layer 14 is different from first damaging layer 13.
As an example, the structure that can obtain step 3) continues to be placed in above-mentioned plasma etching apparatus, to described
First processing gas being passed through in plasma etching apparatus can be that can remove first damaging layer 13 again almost
The gas not reacted with the target material layer 13 to be etched；Preferably, first reaction gas includes carbon-free gas；
Certainly, in other examples, first reaction gas can also include chlorine (Cl2)。
As an example, during carrying out etching post-processing for the first time to first damaging layer 13, at described first
The energy for the plasma that process gases is formed is less than in step 3) carries out dry etching mistake to the target material layer 11 to be etched
The energy for the plasma that etching gas is formed in journey, what the first processing gas described in this step for being thus was formed etc.
Ion can remove first damaging layer 13, and will not cause larger damage to the target material layer 11 to be etched,
Although making the groove 11 after etching post-processing for the first time due to the effect of the plasma of the first processing gas formation
Surface is formed with the second damaging layer 14, but the thickness of second damaging layer 14 and degree of injury can be significantly less than first damage
Hinder the thickness and degree of injury of layer 13.
As an example, being equipped with electrostatic chuck in the plasma etching apparatus with target material to be etched described in adsorbent support
The bed of material 11, it is preferable that in the present embodiment, the charge of the plasma of the first processing gas formation and support are described to be etched
The charge of the electrostatic chuck of target material layer 11 is identical, according to the charge principle that identical charges repel each other, in the identical situation of the two charge
Under, the charge on the electrostatic chuck can apply a repulsive force to the plasma that first processing gas is formed, so as to
To be substantially reduced bombardment power of the plasma to the target material layer 11 to be etched of the first processing gas formation, in turn
Effectively avoid causing too big damage to the target material layer 11 to be etched.
As an example, as shown in figure 5, second damaging layer 14 include due to first processing gas formed it is equal from
The effect of daughter and formed with lattice damage the defects of the second plasma damage layer 141 and processing procedure in formed
, the second reaction residue 142 of inner surface that remain on the groove 111 to be formed.
In step 5), the S15 steps in please referring to Fig.1 and Fig. 6, using second processing gas to second damaging layer
14 carry out second of etching post-processing, described recessed after second of etching post-processing to remove second damaging layer 14
The inner surface of slot 111 remains the second damaging layer residual layer 143, and the component of the second damaging layer residual layer 143 is identical to institute
State the second damaging layer 14.
As an example, the structure that can obtain step 4) continues to be placed in above-mentioned plasma etching apparatus, to described
The second processing gas being passed through in plasma etching apparatus can be non-active gas to ensure the second processing gas
The plasma that body is formed will not be chemically reacted with the target material layer 11 to be etched, and only pass through the side of physical bombardment
Formula removes second damaging layer 14；Preferably, in the present embodiment, the second processing gas may include but be not limited only to halogen
Compound gas.Using non-active gas as the second processing gas, the second processing can be reduced in processing procedure
The plasma that gas is formed forms damage caused by the target material layer 11 to be etched, i.e. the second processing gas
Plasma to damage caused by the target material layer 11 to be etched be significantly less than that first processing gas formed it is equal from
Daughter is to damage caused by the target material layer 11 to be etched.
As an example, during carrying out etching post-processing for the first time to second damaging layer 14, at described second
The energy for the plasma that process gases is formed, which is less than in step 4) to first damaging layer 13 etch for the first time, to be post-processed
The energy for the plasma that first processing gas is formed in the process, the second processing gas described in this step for being thus
Body formed plasma can remove second damaging layer 14, and the target material layer 11 to be etched will not be caused compared with
The plasma that big damage, i.e. second processing gas are formed hardly causes to damage to the target material layer 11 to be etched
It loses.
It should be noted that since second processing gas described in the step forms plasma with to second damage
Layer 14 is removed, in order to avoid the plasma that the second processing gas is formed makes the target material layer 11 to be etched
At loss, only removed during carrying out second of etching processing to second damaging layer 14 using the second processing gas
Most of second damaging layer 14, i.e. 11 remained on surface of the groove has the second damaging layer residual after second of etching post-processing
Layer 143.
As an example, referring to Fig. 7, further including following steps after step 5)：
6) structure that step 5) obtains is cleaned, the second damaging layer residual layer 143 is completely removed.
As an example, in step 6), the structure that step 5) obtains is subjected to cleaning and is included the following steps：
The second damaging layer residual layer 143 6-1) is subjected to ashing processing；
6-2) to ashing, treated that the second damaging layer residual layer 143 carries out wet-cleaning, and described second is damaged
Hinder layer residual layer 143 to completely remove.
As an example, step 6-1) in, the second damaging layer residual layer 143 is subjected to plasma ashing processing, by
In plasma will not being biased as dry etching during plasma ashing is handled, plasma ashing
Plasma in processing procedure will not generate any percussion to the target material layer 11 to be etched, only can with it is described to be etched
The second damaging layer residual layer 143 in erosion target material layer 11 reacts with by the second damaging layer residual layer 143
Ashing.
As an example, step 6-2) in, using wet clean process, to ashing, treated that second damaging layer remains
Layer 143 carries out wet-cleaning, and the second damaging layer residual layer 143 is completely removed.
As an example, step 3) includes first be placed in the structure that step 2) obtains on the workbench of dry etching chamber
Stage carries out the second stage of dry etching to the target material layer 11 to be etched according to the Patterned masking layer 12 and does
111 inner surface of groove in method etching process after etching forms the phase III of the first-loss layer 13, and step 4) includes
The fourth stage of etching post-processing for the first time is carried out to first damaging layer 13 using first processing gas and to described
First damaging layer 13 carries out the interior table of the groove 111 after etching for the first time post-processes during first time etching post-processes
Face forms the 5th stage of second damaging layer 14, and step 5) includes using second processing gas to second damaging layer 14
The 6th stage of second of etching post-processing is carried out, step 6) includes the 7th rank for cleaning the structure that step 5) obtains
Section；Wherein, the first stage to the 6th stage executes in the same chamber, and the 7th stage is independently of described first
It is individually performed except stage to the 6th stage.
It is finally by comparatively gentle plasma ashing and wet-cleaning that second damaging layer 14 is complete in the present invention
Full removal, will not be to waiting for while completely removing second damaging layer 14 described in 111 side wall of the groove and bottom
Etching target material layer 11 causes any loss, so as to prevent the electric property of finally formed semiconductor components and devices bad
And physical property is bad, and then ensure the reliability of finally obtained semiconductor components and devices.
As an example, referring to Fig. 8, it is rapid 6) after further include following steps：
7) Patterned masking layer 12 is removed, it is as shown in Figure 8 to remove the structure obtained after the Patterned masking layer 12.
Specifically, the method for removing the Patterned masking layer 12 is known by those skilled in the art, it is not repeated herein.
Embodiment two
Referring to Fig. 9, the present invention also provides a kind of etching post-processing approach, the etching post-processing approach includes following step
Suddenly：
1) target material layer 11 to be etched is provided, the surface of the target material layer 11 to be etched, which is formed with, graphically to be covered
Film layer 12, etching forms fluted 111 in the target material layer to be etched 11, and the inner surface of the groove 111 is formed with the
One damaging layer 13；
2) it uses the first processing gas to carry out etching for the first time to first damaging layer 13 to post-process, to remove described the
One damaging layer 13, and the inner surface of the groove 111 is formed with the second damaging layer 14 after etching post-processing for the first time；
3) it uses second processing gas to carry out second of etching to second damaging layer 14 to post-process, institute is removed with part
The second damaging layer 14 is stated, the inner surface of the groove 111 remains the second damaging layer residual layer after second of etching post-processing
143。
In step 1), the S21 steps in Fig. 9 are please referred to, a target material layer 11 to be etched, the mesh to be etched are provided
The surface of mark material layer 11 is formed with Patterned masking layer 12, and the 11 interior etching of target material layer to be etched forms fluted
111, the inner surface of the groove 111 is formed with the first damaging layer 13.
As an example, the target material layer to be etched 11 can be any one insulation material layer and conductive material layer structure
At one of group, for example, the material layer 11 to be etched can be oxide skin(coating), nitride layer, polysilicon layer or metal layer
Etc..
As an example, the target material layer to be etched 11 can be formed in semi-conductive substrate 10 for as shown in Figure 10
The film material plies on surface, at this point, the semiconductor substrate 10 can be wafer etc.；Certainly, in other examples, described to wait for
It can also be directly a substrate to be etched, for example, wafer to be etched to etch target material layer 11.
As an example, being formed with several in the Patterned masking layer 12 exposes the target material layer to be etched 11
Opening 121, according to actual needs, the opening 121 can be bore openings, or linearly be open.
As an example, as shown in Figure 10, first damaging layer 13 may include the plasma formed due to etching gas
The effect of body and formed with lattice damage the defects of the first plasma damage layer 131 and reaction process in formed,
Remain on the first reaction residue 132 of the inner surface for the groove 111 to be formed.
In step 2), S2 steps and Figure 11 in Fig. 9 are please referred to, using the first processing gas to first damaging layer
13 carry out etching post-processing for the first time, to remove first damaging layer 13, and etch the groove after post-processing for the first time
111 inner surface is formed with the second damaging layer 14.
As an example, the component of second damaging layer 14 is different from first damaging layer 13.
As an example, the structure that can obtain step 1) continues to be placed in above-mentioned plasma etching apparatus, to described
First processing gas being passed through in plasma etching apparatus can be that can remove first damaging layer 13 again almost
The gas not reacted with the target material layer 13 to be etched；Preferably, first reaction gas includes carbon-free gas；
Certainly, in other examples, first reaction gas can also include chlorine (Cl2)。
As an example, during carrying out etching post-processing for the first time to first damaging layer 13, at described first
The energy for the plasma that process gases is formed is less than in step 1) carries out dry etching mistake to the target material layer 11 to be etched
The energy for the plasma that etching gas is formed in journey, what the first processing gas described in this step for being thus was formed etc.
Ion can remove first damaging layer 13, and will not cause larger damage to the target material layer 11 to be etched,
Although making the groove 11 after etching post-processing for the first time due to the effect of the plasma of the first processing gas formation
Surface is formed with the second damaging layer 14, but the thickness of second damaging layer 14 and degree of injury can be significantly less than first damage
Hinder the thickness and degree of injury of layer 13.
As an example, being equipped with electrostatic chuck in the plasma etching apparatus with target material to be etched described in adsorbent support
The bed of material 11, it is preferable that in the present embodiment, the charge of the plasma of the first processing gas formation and support are described to be etched
The charge of the electrostatic chuck of target material layer 11 is identical, according to the charge principle that identical charges repel each other, in the identical situation of the two charge
Under, the charge on the electrostatic chuck can apply a repulsive force to the plasma that first processing gas is formed, so as to
To be substantially reduced bombardment power of the plasma to the target material layer 11 to be etched of the first processing gas formation, in turn
Effectively avoid causing too big damage to the target material layer 11 to be etched.
As an example, as shown in figure 11, second damaging layer 14 include due to first processing gas formed etc.
The effect of gas ions and formed with lattice damage the defects of the second plasma damage layer 141 and processing procedure in formed
, the second reaction residue 142 of inner surface that remain on the groove 111 to be formed.
In step 3), S3 steps and Figure 12 in Fig. 9 are please referred to, using second processing gas to second damaging layer
14 carry out second of etching post-processing, and second damaging layer 14, the groove after second of etching post-processing are removed with part
111 inner surface remains the second damaging layer residual layer 143.
As an example, the component of the second damaging layer residual layer 143 is identical to second damaging layer 14.
As an example, the structure that can obtain step 2) continues to be placed in above-mentioned plasma etching apparatus, to described
The second processing gas being passed through in plasma etching apparatus can be non-active gas to ensure the second processing gas
The plasma that body is formed will not be chemically reacted with the target material layer 11 to be etched, and only pass through the side of physical bombardment
Formula removes second damaging layer 14；Preferably, in the present embodiment, the second processing gas may include but be not limited only to halogen
Compound gas.Using non-active gas as the second processing gas, the second processing can be reduced in processing procedure
The plasma that gas is formed forms damage caused by the target material layer 11 to be etched, i.e. the second processing gas
Plasma to damage caused by the target material layer 11 to be etched be significantly less than that first processing gas formed it is equal from
Daughter is to damage caused by the target material layer 11 to be etched.
As an example, during carrying out etching post-processing for the first time to second damaging layer 14, at described second
The energy for the plasma that process gases is formed, which is less than in step 3) to first damaging layer 13 etch for the first time, to be post-processed
The energy for the plasma that first processing gas is formed in the process, the second processing gas described in this step for being thus
Body formed plasma can remove second damaging layer 14, and the target material layer 11 to be etched will not be caused compared with
The plasma that big damage, i.e. second processing gas are formed hardly causes to damage to the target material layer 11 to be etched
It loses.
It should be noted that since second processing gas described in the step forms plasma with to second damage
Layer 14 is removed, in order to avoid the plasma that the second processing gas is formed makes the target material layer 11 to be etched
At loss, only removed during carrying out second of etching processing to second damaging layer 14 using the second processing gas
Most of second damaging layer 14, i.e. 11 remained on surface of the groove has the second damaging layer residual after second of etching post-processing
Layer 143.
As an example, please referring to Fig.1 3, include the following steps after step 3)：
4) structure that step 3) obtains is cleaned, the second damaging layer residual layer 143 is completely removed.
As an example, in step 4), the structure that step 3) obtains is subjected to cleaning and is included the following steps：
The second damaging layer residual layer 143 4-1) is subjected to ashing processing；
4-2) to ashing, treated that the second damaging layer residual layer 143 carries out wet-cleaning, and described second is damaged
Hinder layer residual layer 143 to completely remove.
As an example, step 4-1) in, the second damaging layer residual layer 143 is subjected to plasma ashing processing, by
In plasma will not being biased as dry etching during plasma ashing is handled, plasma ashing
Plasma in processing procedure will not generate any percussion to the target material layer 11 to be etched, only can with it is described to be etched
The second damaging layer residual layer 143 in erosion target material layer 11 reacts with by the second damaging layer residual layer 143
Ashing.
As an example, step 4-2) in, using wet clean process, to ashing, treated that second damaging layer remains
Layer 143 carries out wet-cleaning, and the second damaging layer residual layer 143 is completely removed.
It is finally by comparatively gentle plasma ashing and wet-cleaning that second damaging layer 14 is complete in the present invention
Full removal, will not be to waiting for while completely removing second damaging layer 14 described in 111 side wall of the groove and bottom
Etching target material layer 11 causes any loss, so as to prevent the electric property of finally formed semiconductor components and devices bad
And physical property is bad, and then ensure the reliability of finally obtained semiconductor components and devices.
As an example, please refer to Fig.1 4, it is rapid 4) after further include following steps：
5) Patterned masking layer 12 is removed, the structure obtained after the Patterned masking layer 12 such as Figure 14 institutes are removed
Show.Specifically, the method for removing the Patterned masking layer 12 is known by those skilled in the art, it is not repeated herein.
In conclusion a kind of method for etching plasma of present invention offer and plasma etching post-processing approach, described
Method includes the following steps：1) target material layer to be etched is provided；2) it is formed in the surface of the target material layer to be etched
Patterned masking layer, the Patterned masking layer include the opening that several expose the target material layer to be etched；3) according to
Dry etching is carried out to the target material layer to be etched according to the Patterned masking layer, in the target material layer to be etched
The inner surface of interior formation groove, the groove is formed with the first damaging layer；4) use the first processing gas to first damage
Layer progress etching post-processing for the first time, to remove first damaging layer, and the groove after etching post-processing for the first time
Inner surface is formed with the second damaging layer, and the component of second damaging layer is different from first damaging layer；5) it uses at second
Process gases carries out second of etching to second damaging layer and post-processes, to remove second damaging layer, when described second
The inner surface of the groove remains the second damaging layer residual layer, the component of the second damaging layer residual layer after etching post-processing
It is identical to second damaging layer.The present invention is by target material layer to be etched post-process after dry etching
The step of, the plasma damage layer and react residual for being dry-etched in that target material layer surface to be etched is formed can be completely removed
Object is stayed, the electric property for the semiconductor components and devices to be formed is bad and physical property is bad so as to preventing, and then ensures partly to lead
The reliability of volume elements device.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (25)
1. a kind of plasma etching method, which is characterized in that described method includes following steps：
1) target material layer to be etched is provided；
2) Patterned masking layer is formed in the surface of the target material layer to be etched, the Patterned masking layer includes several
Expose the opening of the target material layer to be etched；
3) dry etching is carried out to the target material layer to be etched according to the Patterned masking layer, in the mesh to be etched
It marks and forms groove in material layer, the inner surface of the groove is formed with the first damaging layer；
4) it uses the first processing gas to carry out etching for the first time to first damaging layer to post-process, to remove first damage
Layer, and the inner surface of the groove is formed with the second damaging layer, second damaging layer after first time etching post-processing
Component be different from first damaging layer；
5) it uses second processing gas to carry out second of etching to second damaging layer to post-process, to remove second damage
Layer, the inner surface of the groove remains the second damaging layer residual layer, second damage after second of etching post-processing
The component for hindering layer residual layer is identical to second damaging layer.
2. plasma etching method according to claim 1, which is characterized in that further include following steps after step 5)：
6) structure that step 5) obtains is cleaned, the second damaging layer residual layer is completely removed.
3. plasma etching method according to claim 2, which is characterized in that step 3) includes the knot for obtaining step 2)
Set up on the workbench of dry etching chamber first stage, according to the Patterned masking layer to the target material to be etched
The bed of material carries out the groove inner surface of the second stage and dry etching of dry etching in the process after etching and forms first damage
Lose the phase III of layer；Step 4) includes after carrying out first time etching to first damaging layer using first processing gas
The fourth stage of processing and to first damaging layer carry out for the first time etching post-processing during first time etch after
The inner surface of the groove forms the 5th stage of second damaging layer after reason；Step 5) includes using second processing gas pair
Second damaging layer carries out the 6th stage of second of etching post-processing；Step 6) includes that the structure for obtaining step 5) carries out
7th stage of cleaning；Wherein, the first stage to the 6th stage executes in the same chamber, and the 7th stage is only
It stands on except the first stage to the 6th stage and is individually performed.
4. plasma etching method according to claim 2, which is characterized in that in step 6), knot that step 5) is obtained
Structure carries out cleaning and includes the following steps：
The second damaging layer residual layer 6-1) is subjected to ashing processing；
6-2) to ashing treated it is described second damage residual layer carry out wet-cleaning, the interior table of the groove will be remained on
The second damage residual layer stripping in face.
5. plasma etching method according to claim 4, which is characterized in that further include following steps after step 6)：7)
Remove the Patterned masking layer.
6. plasma etching method according to claim 1, which is characterized in that the target material layer to be etched includes exhausted
One of the group that edge material layer and conductive material layer are constituted；In step 2), the opening is bore openings or linear opening.
7. plasma etching method according to claim 1, which is characterized in that first damage formed in step 3)
Layer includes the first plasma damage layer and the first reaction residue positioned at the first plasma damage layer surface.
8. plasma etching method according to claim 7, which is characterized in that second damage formed in step 4)
Layer includes the second plasma damage layer and the second reaction residue positioned at the second plasma damage layer surface, described
The thickness of second plasma damage layer is less than the thickness of the first plasma damage layer.
9. plasma etching method according to claim 1, which is characterized in that first reaction used in step 4)
Gas includes carbon-free gas.
10. plasma etching method according to claim 9, which is characterized in that first reaction gas further includes chlorine
Gas.
11. plasma etching method according to claim 1, which is characterized in that first damaging layer in step 4)
The energy of the plasma of progress etching post-processing for the first time, which is less than in step 3), does the target material layer to be etched
The energy of the plasma of method etching.
12. plasma etching method according to claim 1, which is characterized in that first damaging layer in step 4)
Carry out the electricity of the charge and the electrostatic chuck for supporting the target material layer to be etched of the plasma of etching post-processing for the first time
Lotus is identical.
13. plasma etching method according to claim 1, which is characterized in that at described second used in step 5)
Process gases is not chemically reacted with second damaging layer, and the second processing gas removes institute by way of physical bombardment
State the second damaging layer.
14. plasma etching method according to claim 13, which is characterized in that use second processing gas in step 5)
The energy that the plasma of second of etching post-processing is carried out to second damaging layer is less than in step 4) to first damage
Hinder the energy that layer carries out the plasma of etching post-processing for the first time.
15. plasma etching method according to claim 13, which is characterized in that at described second used in step 5)
Process gases includes halide gas.
16. a kind of plasma etching post-processing approach, which is characterized in that described method includes following steps：
1) target material layer to be etched is provided, the surface of the target material layer to be etched is formed with Patterned masking layer, institute
It states etching in target material layer to be etched and is formed fluted, the inner surface of the groove is formed with the first damaging layer；
2) it uses the first processing gas to carry out etching for the first time to first damaging layer to post-process, to remove first damage
Layer, and the inner surface of the groove is formed with the second damaging layer after etching post-processing for the first time；
3) it uses second processing gas to carry out second of etching to second damaging layer to post-process, described second is removed with part
Damaging layer, the inner surface of the groove remains the second damaging layer residual layer after second of etching post-processing.
17. plasma etching post-processing approach according to claim 16, which is characterized in that further include after step 3) as
Lower step：
4) structure that step 3) obtains is cleaned, the second damaging layer residual layer is completely removed.
18. plasma etching post-processing approach according to claim 17, which is characterized in that in step 4), by step 3)
Obtained structure carries out cleaning and includes the following steps：
The second damaging layer residual layer 4-1) is subjected to ashing processing；
4-2) to ashing treated it is described second damage residual layer carry out wet-cleaning, the interior table of the groove will be remained on
The second damage residual layer stripping in face.
19. plasma etching post-processing approach according to claim 18, which is characterized in that further include as follows after step 4)
Step：
5) Patterned masking layer is removed.
20. plasma etching post-processing approach according to claim 16, which is characterized in that the target material to be etched
Layer includes one of the group that insulation material layer and conductive material layer are constituted；First damaging layer includes the first plasma damage
Layer and positioned at the first plasma damage layer surface the first reaction residue.
21. plasma etching post-processing approach according to claim 20, which is characterized in that is formed in step 2) is described
Second damaging layer includes the second plasma damage layer and reacts residual positioned at the second of the second plasma damage layer surface
Object, the thickness of the second plasma damage layer is stayed to be less than the thickness of the first plasma damage layer.
22. plasma etching post-processing approach according to claim 16, which is characterized in that is used in step 2) is described
First reaction gas includes carbon-free gas and chlorine, and the second processing gas includes halide gas.
23. plasma etching post-processing approach according to claim 16, which is characterized in that described first in step 2)
The energy that damaging layer carries out the plasma of etching post-processing for the first time is less than in step 1) in the target material layer to be etched
Middle etching forms the energy of the plasma of the groove, after carrying out first time etching to first damaging layer in step 2)
The charge of the plasma of reason is identical as the charge of electrostatic chuck of target material layer to be etched is supported.
24. plasma etching post-processing approach according to claim 16, which is characterized in that is used in step 3) is described
Second processing gas is not chemically reacted with second damaging layer, and the second processing gas is by way of physical bombardment
Remove second damaging layer.
25. plasma etching post-processing approach according to claim 24, which is characterized in that used at second in step 3)
The energy that process gases carries out second damaging layer plasma of second of etching post-processing is less than in step 2) to described
First damaging layer carries out the energy of the plasma of etching post-processing for the first time.
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| CN111697113A (en) * | 2020-06-15 | 2020-09-22 | 南方科技大学 | Preparation method of Micro-LED device and Micro-LED device |
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