CN106030788B - 具有具堆叠芯片的经部分薄化引线框架及内插件的转换器 - Google Patents

具有具堆叠芯片的经部分薄化引线框架及内插件的转换器 Download PDF

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Publication number
CN106030788B
CN106030788B CN201580008988.9A CN201580008988A CN106030788B CN 106030788 B CN106030788 B CN 106030788B CN 201580008988 A CN201580008988 A CN 201580008988A CN 106030788 B CN106030788 B CN 106030788B
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chip
fet
pad
height
traces
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CN106030788A (zh
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拉吉夫·丁卡尔·乔希
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49531—Additional leads the additional leads being a wiring board
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for individual devices of subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
CN201580008988.9A 2014-02-20 2015-02-20 具有具堆叠芯片的经部分薄化引线框架及内插件的转换器 Active CN106030788B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/185,502 US9136256B2 (en) 2014-02-20 2014-02-20 Converter having partially thinned leadframe with stacked chips and interposer, free of wires and clips
US14/185,502 2014-02-20
PCT/US2015/016739 WO2015127159A1 (en) 2014-02-20 2015-02-20 Converter having partially thinned leadframe with stacked chips and interposer

Publications (2)

Publication Number Publication Date
CN106030788A CN106030788A (zh) 2016-10-12
CN106030788B true CN106030788B (zh) 2019-03-08

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CN201580008988.9A Active CN106030788B (zh) 2014-02-20 2015-02-20 具有具堆叠芯片的经部分薄化引线框架及内插件的转换器

Country Status (5)

Country Link
US (2) US9136256B2 (enExample)
EP (1) EP3108503B1 (enExample)
JP (1) JP6534677B2 (enExample)
CN (1) CN106030788B (enExample)
WO (1) WO2015127159A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8587099B1 (en) * 2012-05-02 2013-11-19 Texas Instruments Incorporated Leadframe having selective planishing
US10312184B2 (en) * 2015-11-04 2019-06-04 Texas Instruments Incorporated Semiconductor systems having premolded dual leadframes
US20200135632A1 (en) * 2018-10-24 2020-04-30 Texas Instruments Incorporated Die isolation on a substrate
CN109545697B (zh) * 2018-12-26 2024-06-18 桂林电子科技大学 半导体封装方法及半导体封装结构
US10964629B2 (en) 2019-01-18 2021-03-30 Texas Instruments Incorporated Siderail with mold compound relief

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070132079A1 (en) * 2005-11-21 2007-06-14 Ralf Otremba Power Semiconductor Component With Semiconductor Chip Stack In A Bridge Circuit And Method For Producing The Same
US20120228696A1 (en) * 2011-03-07 2012-09-13 Texas Instruments Incorporated Stacked die power converter
US20120248539A1 (en) * 2011-03-31 2012-10-04 Xiaotian Zhang Flip chip semiconductor device
US20120326287A1 (en) * 2011-06-27 2012-12-27 National Semiconductor Corporation Dc/dc convertor power module package incorporating a stacked controller and construction methodology
US20130328216A1 (en) * 2012-06-06 2013-12-12 Wei Qiang Jin Integrated circuit packaging system with interposer and method of manufacture thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3609684B2 (ja) * 2000-03-28 2005-01-12 三洋電機株式会社 半導体装置およびその製造方法
US7335972B2 (en) 2003-11-13 2008-02-26 Sandia Corporation Heterogeneously integrated microsystem-on-a-chip
US20080036078A1 (en) 2006-08-14 2008-02-14 Ciclon Semiconductor Device Corp. Wirebond-less semiconductor package
US8263434B2 (en) 2009-07-31 2012-09-11 Stats Chippac, Ltd. Semiconductor device and method of mounting die with TSV in cavity of substrate for electrical interconnect of Fi-PoP
US20120200281A1 (en) * 2011-02-07 2012-08-09 Texas Instruments Incorporated Three-Dimensional Power Supply Module Having Reduced Switch Node Ringing
US9508633B2 (en) 2011-08-22 2016-11-29 Texas Instruments Incorporated High performance power transistor having ultra-thin package
US20130082383A1 (en) 2011-10-03 2013-04-04 Texas Instruments Incorporated Electronic assembly having mixed interface including tsv die

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070132079A1 (en) * 2005-11-21 2007-06-14 Ralf Otremba Power Semiconductor Component With Semiconductor Chip Stack In A Bridge Circuit And Method For Producing The Same
US20120228696A1 (en) * 2011-03-07 2012-09-13 Texas Instruments Incorporated Stacked die power converter
US20120248539A1 (en) * 2011-03-31 2012-10-04 Xiaotian Zhang Flip chip semiconductor device
US20120326287A1 (en) * 2011-06-27 2012-12-27 National Semiconductor Corporation Dc/dc convertor power module package incorporating a stacked controller and construction methodology
US20130328216A1 (en) * 2012-06-06 2013-12-12 Wei Qiang Jin Integrated circuit packaging system with interposer and method of manufacture thereof

Also Published As

Publication number Publication date
WO2015127159A1 (en) 2015-08-27
JP2017511976A (ja) 2017-04-27
US9136256B2 (en) 2015-09-15
JP6534677B2 (ja) 2019-06-26
EP3108503A1 (en) 2016-12-28
US9355946B2 (en) 2016-05-31
US20150235999A1 (en) 2015-08-20
US20150348890A1 (en) 2015-12-03
EP3108503B1 (en) 2019-04-10
CN106030788A (zh) 2016-10-12
EP3108503A4 (en) 2017-11-22

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