CN106024962A - 一种多结层状薄膜太阳能电池 - Google Patents
一种多结层状薄膜太阳能电池 Download PDFInfo
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- CN106024962A CN106024962A CN201610533532.0A CN201610533532A CN106024962A CN 106024962 A CN106024962 A CN 106024962A CN 201610533532 A CN201610533532 A CN 201610533532A CN 106024962 A CN106024962 A CN 106024962A
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- 239000010409 thin film Substances 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Abstract
一种多结层状薄膜太阳能电池，包括顶层和末层的正、负电极层，在顶层电极层与末层电极层之间设有多个PN结薄膜层，各PN结薄膜层之间设有连接层。本发明是基于碳、硅等普通绿色材料的、高光电转换效率的太阳能薄膜叠层电池，应用前景无限。
Description
技术领域
本发明涉及太阳能电池，尤其涉及一种多结层状薄膜太阳能电池。
背景技术
开发利用太阳能是人类解决能源危机、环境危机的最主要途径之一，而绿色高效太阳能电池开发是广泛应用太阳能的关键技术与环节。当前硅基电池包括薄膜电池与硅片电池的光电转换效率不高，使用价值有限，而稳定效率达到23％以上的太阳能电池，如叠层砷化镓或铜铟镓硒或锗基等薄膜电池，都存在材料稀缺或有毒等问题，而且工艺复杂，没有社会广泛应用潜力。
发明内容
本发明的目的，就是为了解决上述问题，提供一种多结层状薄膜太阳能电池。
为了达到上述目的，本发明采用了以下技术方案：一种多结层状薄膜太阳能电池，
包括顶层正电极层和末层负电极层，在顶层电极层与末层电极层之间设有多个PN 结薄膜层，各PN 结薄膜层之间设有连接层。
所述多个PN 结薄膜层各PN 结的P 区与N 区次序相同，即所有PN 结的方向一致。
所述各PN 结薄膜层是硅基掺杂的非晶或微晶P 型半导体和N 型半导体的同质结，
或是由硅基P 型或N 型掺杂的非晶或微晶半导体和碳化硅N 型或P 型掺杂的非晶或微晶半导体组成的异质结。
所述多个PN 结薄膜层中每个PN
结薄膜层的厚度在3 ～ 2000 纳米之间，并且前一层PN 结薄膜层的厚度为后一层PN 结薄膜层的厚度的1/3-1/20。
所述连接层为半导体材料、透明导电材料、氧化物或金属，厚度为0 ～
2000 纳米但不为零。
所述半导体材料包括本征硅或碳化硅；所述透明导电材料包括TCO、ITO 等；所述
氧化物包括氧化铝、氧化硅等；所述金属包括铜、铝、银、镁、钨、镍等纯金属或其合金等。
本发明是基于碳、硅等普通绿色材料的、高光电转换效率的太阳能薄膜叠层电池，应用前景无限。
附图说明
图1 是本发明多结层状薄膜太阳能电池的基本结构示意图。
具体实施方式
参见图1，本发明多结层状薄膜太阳能电池，包括顶层电极层1 和末层电极层2，在顶层电极层1 与末层电极层2 之间设有多个PN 结薄膜层3，各PN 结薄膜层之本发明中的多个PN 结薄膜层各PN 结的P 区与N 区次序相同，即所有PN 结的方向一致；各PN 结薄膜层是硅基掺杂的非晶或微晶P 型半导体和N 型半导体的同质结，或是由硅基P 型或N 型掺杂的非晶或微晶半导体和碳化硅N 型或P 型掺杂的非晶或微晶半导体组成的异质结。
本发明中的多个PN 结薄膜层中每个PN 结薄膜层的厚度在3 ～ 2000 纳米之间，并且前一层PN 结薄膜层的厚度为后一层PN 结薄膜层的厚度的1/3-1/20。
本发明中的连接层为半导体材料、透明导电材料、氧化物或金属，厚度为0 ～
2000
纳米但不为零；半导体材料包括本征硅或碳化硅；透明导电材料包括TCO 或ITO ；氧化物包括氧化铝、氧化硅等；金属包括铜、铝、银、镁、钨、镍等纯金属或其合金等。
本发明中的多个PN 结薄膜层主要由高真空条件下的电磁控物理蒸镀、溅射及化气相沉积工艺制成。
Claims (6)
1. 一种多结层状薄膜太阳能电池，包括顶层电极层和末层电极层，其特征在于，在顶层电极层与末层电极层之间设有多个PN 结薄膜层，各PN 结薄膜层之间设有连接层。
2. 如权利要求1 所述的多结层状薄膜太阳能电池，其特征在于：所述多个PN 结薄膜层各PN 结的P 区与N 区次序相同，即所有PN 结的方向一致。
3. 如权利要求1 所述的多结层状薄膜太阳能电池，其特征在于：所述各PN 结薄膜层是硅基掺杂的非晶或微晶P 型半导体和N 型半导体的同质结，或是由硅基P 型或N
型掺杂的非晶或微晶半导体和碳化硅N 型或P 型掺杂的非晶或微晶半导体组成的异质结。
4. 如权利要求1 所述的多结层状薄膜太阳能电池，其特征在于：所述多个PN 结薄膜层中每个PN 结薄膜层的厚度在3 ～ 2000 纳米之间，并且前一层PN
结薄膜层的厚度为后一层PN 结薄膜层的厚度的1/3-1/20。
5. 如权利要求1 所述的多结层状薄膜太阳能电池，其特征在于：所述连接层为半导体材料、透明导电材料、氧化物或金属，厚度为0 ～ 2000 纳米但不为零。
6. 如权利要求1 所述的多结层状薄膜太阳能电池，其特征在于：所述半导体材料包括本征硅或碳化硅；所述透明导电材料包括TCO 或ITO ；所述氧化物包括氧化铝或氧化硅；所述金属包括铜、铝、银、镁、钨、镍或其合金。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107180887A (zh) * | 2017-06-20 | 2017-09-19 | 上海日岳新能源有限公司 | 一种多结叠层薄膜太阳能电池内部结之间耦合连接工艺 |
| CN110534607A (zh) * | 2018-05-25 | 2019-12-03 | 中国电子科技集团公司第十八研究所 | 一种GaInP/GaAs/μc-Si：H三结叠层太阳电池 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060162767A1 (en) * | 2002-08-16 | 2006-07-27 | Angelo Mascarenhas | Multi-junction, monolithic solar cell with active silicon substrate |
| CN104681651A (zh) * | 2013-11-27 | 2015-06-03 | 宋太伟 | 硅基多结太阳能电池 |
| CN104681653A (zh) * | 2013-11-27 | 2015-06-03 | 上海建冶科技工程股份有限公司 | 多结层状薄膜太阳能电池 |
| CN104733559A (zh) * | 2013-12-18 | 2015-06-24 | 宋太伟 | 多层扩展pn结薄膜太阳能电池 |
-
2016
- 2016-07-08 CN CN201610533532.0A patent/CN106024962A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060162767A1 (en) * | 2002-08-16 | 2006-07-27 | Angelo Mascarenhas | Multi-junction, monolithic solar cell with active silicon substrate |
| CN104681651A (zh) * | 2013-11-27 | 2015-06-03 | 宋太伟 | 硅基多结太阳能电池 |
| CN104681653A (zh) * | 2013-11-27 | 2015-06-03 | 上海建冶科技工程股份有限公司 | 多结层状薄膜太阳能电池 |
| CN104733559A (zh) * | 2013-12-18 | 2015-06-24 | 宋太伟 | 多层扩展pn结薄膜太阳能电池 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107180887A (zh) * | 2017-06-20 | 2017-09-19 | 上海日岳新能源有限公司 | 一种多结叠层薄膜太阳能电池内部结之间耦合连接工艺 |
| CN110534607A (zh) * | 2018-05-25 | 2019-12-03 | 中国电子科技集团公司第十八研究所 | 一种GaInP/GaAs/μc-Si：H三结叠层太阳电池 |
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