CN105449026A - 一种二硫化钼叠层太阳能电池及其制备方法 - Google Patents

一种二硫化钼叠层太阳能电池及其制备方法 Download PDF

Info

Publication number
CN105449026A
CN105449026A CN201610010432.XA CN201610010432A CN105449026A CN 105449026 A CN105449026 A CN 105449026A CN 201610010432 A CN201610010432 A CN 201610010432A CN 105449026 A CN105449026 A CN 105449026A
Authority
CN
China
Prior art keywords
solar cell
molybdenum disulfide
molybdenum bisuphide
lamination
molybdenum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610010432.XA
Other languages
English (en)
Inventor
罗云荣
陈春玲
陈慧敏
周如意
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hunan Normal University
Original Assignee
Hunan Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hunan Normal University filed Critical Hunan Normal University
Priority to CN201610010432.XA priority Critical patent/CN105449026A/zh
Publication of CN105449026A publication Critical patent/CN105449026A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种二硫化钼叠层太阳能电池及其制备方法，其特征在于，所述太阳能电池的结构从上到下依次为：金属电极1、二硫化钼叠层2、透明导电衬底3。本发明的优点在于，一是利用不同厚度的二硫化钼禁带宽度不同，对太阳光谱的响应范围不同，通过将不同厚度的二硫化钼薄膜堆叠构成叠层太阳能电池，从而实现对太阳光全波段的充分吸收，以达到提高太阳能电池光电转换效率的目的；二是利用二硫化钼同种材料构成同质PN结，减少PN结材料的晶格失配，减少缺陷态密度，从而减少载流子的复合，提高光电流，进而提高太阳能电池的光电转换效率；三是制备工艺简单，大大降低生产成本。

Description

一种二硫化钼叠层太阳能电池及其制备方法
技术领域
本发明属于新能源领域，具体涉及一种二硫化钼叠层太阳能电池及其制备方法。
背景技术
随着社会的发展，环境污染和能源危机问题逐渐成为全人类共同面临的重大挑战，开发新能源已成为世界各国学者研究的一个重要方向，而太阳能来源广泛、对环境污染小，具有巨大的发展潜力。以晶体硅为原料的传统太阳能电池一直占据着太阳能电池市场的主要地位，但其生产成本高，对环境污染大，且技术已很成熟，很难有大的突破。在这种情况下，研发低成本且高效的薄膜太阳能电池迫在眉睫，因此以铜铟镓锡、碲化镉等为材料制备的薄膜太阳能电池逐渐发展起来，并且技术也已比较成熟，但此类太阳能电池伴随着重金属及稀有元素的大量使用，不利于环境保护并且生产成本高，制约了其大规模的开发利用。因此研发性价比高且对环境污染小的太阳能电池，成为科研工作者的追求目标。
二硫化钼作为直接带隙半导体材料，具有良好的光学和电学特性，研究表明，单层二硫化钼中的价带电子能够在不借助额外声子的情况下，通过吸收能量大于带隙宽度的光子直接从价带跃迁到导带，这种垂直跃迁方式有效地提高了光子的利用率。并且，二硫化钼的能带结构可以通过控制其厚度来实现连续性调节，不同厚度的二硫化钼具有不同的带隙宽度，因而能够吸收不同波段的太阳光。利用二硫化钼的这种特性，我们可以设计不同厚度的二硫化钼薄膜构成叠层太阳能电池，实现对太阳光谱的充分吸收，从而提高太阳能电池的光电转换效率。
发明内容
为了能够实现对太阳光谱全波段的充分吸收利用，以提高太阳能电池的光电转换效率，本发明提供一种二硫化钼叠层太阳能电池及其制备方法，其结构从上到下依次为：金属电极、二硫化钼叠层、透明导电衬底。所述金属电极是金属银电极或铝电极；所述二硫化钼叠层是由多个厚度不同的二硫化钼子电池组成；所述二硫化钼子电池是由P型二硫化钼薄膜和N型二硫化钼薄膜组成，且P型二硫化钼薄膜和N型二硫化钼薄膜的厚度是相同的；所述透明导电衬底是FTO透明导电玻璃或ITO透明导电玻璃或AZO透明导电玻璃或石墨烯；所述太阳能电池的制备过程包括以下步骤：首先，利用磁控溅射法或化学气相沉积法在透明导电衬底上依次沉积厚度逐渐减少的二硫化钼子电池以构成二硫化钼叠层，再利用丝网印刷法在二硫化钼叠层上丝网印刷金属电极以制得所述的二硫化钼叠层太阳能电池。本发明的优点在于，一是利用不同厚度的二硫化钼禁带宽度不同，对太阳光谱的响应范围不同，通过将不同厚度的二硫化钼薄膜堆叠构成多结叠层太阳能电池，从而实现对太阳光全波段的充分吸收，以达到提高太阳能电池光电转换效率的目的；二是利用二硫化钼同种材料构成同质PN结，减少PN结材料的晶格失配，减少缺陷态密度，从而减少载流子的复合，提高光电流，进而提高太阳能电池的光电转换效率；三是制备工艺简单，大大降低生产成本。
附图说明
附图1为本发明太阳能电池结构示意图。
附图2为实施例的结构示意图。
附图1标号说明如下：
1—金属电极；
2—二硫化钼叠层；
3—透明导电衬底。
以下结合实施例对本发明作进一步说明，但本发明不局限于实施例中涉及的内容。
实施例一
如附图2所示，本实施例中的叠层太阳能电池结构从上到下依次包括：金属电极1、二硫化钼叠层2、透明导电衬底3。所述的二硫化钼叠层按图2所示其包括：第一个二硫化钼子电池4、第二个二硫化钼子电池5。其中第一个二硫化钼子电池4包括从上到下依次分布的厚度均为双层的P型二硫化钼薄膜和N型二硫化钼薄膜，带隙宽度约为1.65eV；第二个二硫化钼子电池5包括从上到下依次分布的厚度均为单层的P型二硫化钼薄膜和N型二硫化钼薄膜，带隙宽度约为1.8eV。
本实施例中所述二硫化钼叠层太阳能电池具体制备方法如下：在FTO透明导电玻璃衬底3上，利用化学气相沉积法依次沉积厚度均为双层的N型二硫化钼薄膜和P型二硫化钼薄膜，得到第一个二硫化钼子电池4，在第一个二硫化钼子电池4上再次利用化学气相沉积法依次沉积厚度均为单层的N型二硫化钼薄膜和P型二硫化钼薄膜，得到第二个二硫化钼子电池5，最后在第二个二硫化钼子电池5上丝网印刷金属银电极1，制得所述的二硫化钼叠层太阳能电池。
实施例二
本实施例制备一种二硫化钼叠层太阳能电池，与实施例一相似，不同点是所述二硫化钼叠层太阳能电池的二硫化钼叠层包括3个二硫化钼子电池，所增加的二硫化钼子电池包括从上到下依次分布的厚度均为三层的P型二硫化钼薄膜和N型二硫化钼薄膜，带隙宽度约为1.35eV，且所述3个二硫化钼子电池的厚度从上到下依次增加。
实施例三
本实施例制备一种二硫化钼叠层太阳能电池，与实施例一相似，不同点是所述二硫化钼叠层的制备方法采用磁控溅射法。
实施例四
本实施例制备一种二硫化钼叠层太阳能电池，与实施例一相似，不同点是选用石墨烯作为透明导电衬底。
实施例五
本实施例制备一种二硫化钼叠层太阳能电池，与实施例一相似，不同点是选用ITO透明导电玻璃作为透明导电衬底。
实施例六
本实施例制备一种二硫化钼叠层太阳能电池，与实施例一相似，不同点是选用AZO透明导电玻璃作为透明导电衬底。
实施例七
本实施例制备一种二硫化钼叠层太阳能电池，与实施例一相似，不同点是最后丝网印刷金属铝电极。

Claims (2)

1.一种二硫化钼叠层太阳能电池，其特征在于，所述太阳能电池是由多结禁带宽度不同的二硫化钼子电池组成。
2.一种如权利要求1所述的二硫化钼叠层太阳能电池的制备方法，其特征在于：首先，利用磁控溅射法或化学气相沉积法在透明导电衬底上依次沉积厚度逐渐减少的二硫化钼子电池以构成二硫化钼叠层，再利用丝网印刷法在二硫化钼叠层上丝网印刷金属电极，以制得所述的二硫化钼叠层太阳能电池。
CN201610010432.XA 2016-01-08 2016-01-08 一种二硫化钼叠层太阳能电池及其制备方法 Pending CN105449026A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610010432.XA CN105449026A (zh) 2016-01-08 2016-01-08 一种二硫化钼叠层太阳能电池及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610010432.XA CN105449026A (zh) 2016-01-08 2016-01-08 一种二硫化钼叠层太阳能电池及其制备方法

Publications (1)

Publication Number Publication Date
CN105449026A true CN105449026A (zh) 2016-03-30

Family

ID=55559007

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610010432.XA Pending CN105449026A (zh) 2016-01-08 2016-01-08 一种二硫化钼叠层太阳能电池及其制备方法

Country Status (1)

Country Link
CN (1) CN105449026A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107895745A (zh) * 2017-11-14 2018-04-10 天津理工大学 一种二硫化钼/硅双结太阳能电池及其制备方法
CN109473490A (zh) * 2018-11-08 2019-03-15 天津理工大学 一种垂直多结结构二硫化钼太阳能电池及其制备方法
CN110581197A (zh) * 2019-08-02 2019-12-17 复旦大学 一种可见光与近红外光的双波段光电探测器及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150116906A1 (en) * 2013-10-24 2015-04-30 Empire Technology Development Llc Two-dimensional transition metal dichalcogenide sheets and methods of preparation and use
CN105161576A (zh) * 2015-10-20 2015-12-16 华中科技大学 一种基于二硫化钼的肖特基异质结太阳能电池及其制备方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150116906A1 (en) * 2013-10-24 2015-04-30 Empire Technology Development Llc Two-dimensional transition metal dichalcogenide sheets and methods of preparation and use
CN105161576A (zh) * 2015-10-20 2015-12-16 华中科技大学 一种基于二硫化钼的肖特基异质结太阳能电池及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
邱　浩，王欣然: "二硫化钼的电子输运与器件", 《南京大学学报（自然科学）》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107895745A (zh) * 2017-11-14 2018-04-10 天津理工大学 一种二硫化钼/硅双结太阳能电池及其制备方法
CN109473490A (zh) * 2018-11-08 2019-03-15 天津理工大学 一种垂直多结结构二硫化钼太阳能电池及其制备方法
CN110581197A (zh) * 2019-08-02 2019-12-17 复旦大学 一种可见光与近红外光的双波段光电探测器及其制备方法

Similar Documents

Publication Publication Date Title
US20190237607A1 (en) Thin-film solar cell
CN207320169U (zh) 一种渐变带隙的钙钛矿电池
CN106653898B (zh) 一种czts太阳能电池
CN101097968A (zh) 一种高效叠层太阳能电池及其制备方法
CN106129146B (zh) 一种以黑磷烯作为导电材料的硒化锑薄膜太阳能电池及其制备方法
CN102054897A (zh) 多元素合金单一靶材制备薄膜太阳能电池的方法
EP3748697A1 (en) Solar cell, multi-junction solar cell, solar cell module and solar power system
CN106098820B (zh) 一种新型硒化锑薄膜太阳能电池及其制备方法
CN102931275A (zh) 一种具有超晶格结构的新型薄膜太阳电池
CN105449026A (zh) 一种二硫化钼叠层太阳能电池及其制备方法
CN100580959C (zh) 可见-红外波段吸收的非晶薄膜太阳能电池
KR101219835B1 (ko) 태양전지 및 이의 제조방법
CN101393942B (zh) 多晶硅-碳化硅叠层薄膜太阳能电池
CN104681651B (zh) 硅基多结太阳能电池
CN102867889A (zh) 一种薄膜太阳能电池的制作工艺
KR20120113130A (ko) 태양전지 및 이의 제조방법
CN101556973B (zh) 薄膜光伏器件及复合电极
Zhou et al. Research on copper indium gallium selenide (CIGS) thin-film solar cells
CN106409961B (zh) 一种n-Si/CdSSe叠层太阳电池及其制备方法
CN205319168U (zh) 一种硫化亚锡和硫化铟薄膜太阳能电池
CN104681653A (zh) 多结层状薄膜太阳能电池
CN106024962A (zh) 一种多结层状薄膜太阳能电池
KR101455832B1 (ko) 박막 태양전지 및 그 제조 방법
KR20140058794A (ko) 박막형 태양전지 및 그 제조방법
CN102856421A (zh) 一种新型三结薄膜太阳能电池及其生产方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20160330

WD01 Invention patent application deemed withdrawn after publication