CN106129146B - 一种以黑磷烯作为导电材料的硒化锑薄膜太阳能电池及其制备方法 - Google Patents
一种以黑磷烯作为导电材料的硒化锑薄膜太阳能电池及其制备方法 Download PDFInfo
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- -1 black phosphorus alkene Chemical class 0.000 title claims abstract description 58
- 239000010409 thin film Substances 0.000 title claims abstract description 45
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 239000004020 conductor Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 17
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 35
- 238000000151 deposition Methods 0.000 claims description 24
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 8
- 239000011733 molybdenum Substances 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 7
- 230000009466 transformation Effects 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 4
- 239000002159 nanocrystal Substances 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 238000002161 passivation Methods 0.000 abstract description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002305 electric material Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XLVKXZZJSTWDJY-UHFFFAOYSA-N [SiH4].[Si] Chemical compound [SiH4].[Si] XLVKXZZJSTWDJY-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 231100000004 severe toxicity Toxicity 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
本发明公开了一种以黑磷烯作为导电材料的硒化锑薄膜太阳能电池及其制备方法，其特征在于，所述太阳能电池的结构从上至下依次为：金属正面电极1、n型重掺杂黑磷烯薄膜2、n型二硫化钼薄膜3、本征氢化纳米晶硅薄膜4、p型硒化锑薄膜5、p型重掺杂黑磷烯衬底6、金属背面电极7。本发明的优点在于以直接带隙半导体材料二硫化钼作为缓冲层，以具有高吸光系数的硒化锑作为吸收层，利用本征氢化纳米晶硅钝化pn结界面，降低界面的缺陷态密度，同时利用黑磷烯作为导电材料，减少电池的串联电阻，极大地增加了光电流，提高了硒化锑薄膜太阳能电池的光电转换效率。
Description
技术领域
本发明属于新能源领域，具体涉及一种以黑磷烯作为导电材料的硒化锑薄膜太阳能电池及其制备方法。
背景技术
近年来，薄膜太阳能电池因其原料用量少、制备能耗低、产品柔性好等优势，已日益成为太阳能电池领域的研究热点。就目前而言，薄膜太阳能电池领域技术比较成熟，光电转换效率比较高的主要有铜铟镓硒薄膜太阳能电池和碲化镉薄膜太阳能电池。对于铜铟镓硒薄膜太阳能电池，其光电转换效率已达到21.7%，但其生产工艺复杂，并且铟和镓价格昂贵，生产成本高，制约了其发展；对于碲化镉薄膜太阳能电池，其实验室光电转换效率已达到21%，但镉有剧毒并且碲资源稀缺，很难大范围推广使用。日前，科研工作者把目光投向了硒化锑这种新型的半导体材料。硒化锑具有低毒、廉价、原材料储量丰富等特点，其禁带宽度为1.0 eV ~1.2eV，属于直接带隙材料，对短波可见光的吸收系数较大（>105cm-1），只需要500nm薄膜就能够充分吸收入射太阳光，非常适合制作薄膜太阳能电池。不仅如此，硒化锑还是一种二元单相化合物，在制备和生产过程中可以避免复杂的组分和杂相等控制难题，其次，硒化锑的相对介电常数较大，对自由电子或空穴的俘获能力较低，这有效降低了缺陷所引起的载流子复合损失。尽管如此，目前文献报道硒化锑薄膜太阳能电池的光电转换效率为3.7%，而理论上硒化锑薄膜太阳能电池的光电转换效率可以达到30%以上，因而，硒化锑材料在薄膜太阳能电池应用领域还有巨大的发展潜力，人们急需寻找一种新型的、效率较高的硒化锑薄膜太阳能电池以推动太阳能电池领域的发展。
发明内容
为了进一步提高硒化锑薄膜太阳能电池的光电转换效率，本发明提供了一种以黑磷烯作为导电材料的硒化锑薄膜太阳能电池及其制备方法，其特征在于，所述太阳能电池的结构从上至下依次为：金属正面电极、n型重掺杂黑磷烯薄膜、n型二硫化钼薄膜、本征氢化纳米晶硅薄膜、p型硒化锑薄膜、p型重掺杂黑磷烯衬底、金属背面电极。所述金属正面和背面电极为金属银电极或铝电极；所述氢化纳米晶硅薄膜是由嵌于氢化非晶硅的纳米晶体硅组成，其具有高电导率、高迁移率和低的光吸收系数等特点；所述二硫化钼为直接带隙半导体材料，其禁带宽度为1.2eV~1.8eV，并且其带隙宽度可以通过调控二硫化钼的厚度来实现连续性调节；所述黑磷烯具有高电导率、高透光率以及高漏电流调制率等特点，能够极大地减少太阳能电池的整体串联电阻；所述太阳能电池的制备过程包括以下步骤：首先在p型重掺杂黑磷烯衬底上利用肼溶液法或磁控溅射法或超声喷雾法沉积p型硒化锑薄膜，然后在p型硒化锑薄膜上利用等离子体增强化学气相沉积法或磁控溅射法制备本征氢化纳米晶硅薄膜，再在本征氢化纳米晶硅薄膜上利用化学气相沉积法或磁控溅射法沉积n型二硫化钼薄膜，接着在n型二硫化钼薄膜上利用化学气相沉积法或机械剥离法沉积n型重掺杂黑磷烯薄膜，最后在n型重掺杂黑磷烯薄膜表面以及p型重掺杂黑磷烯衬底上利用丝网印刷法或蒸镀法分别沉积金属正面和背面电极，即制得所需要的以黑磷烯作为导电材料的硒化锑薄膜太阳能电池。本发明的优点在于以直接带隙半导体材料二硫化钼作为缓冲层，通过调控二硫化钼的厚度以达到太阳能电池的最佳禁带宽度，以具有高吸光系数的硒化锑作为吸收层，利用本征氢化纳米晶硅钝化pn结界面，降低界面的缺陷态密度，同时利用黑磷烯作为导电材料，充分利用其高电导率，高透光率以及非常高的漏电流调制率等特点，减少太阳能电池的整体串联电阻，极大地增加了光电流，提高了硒化锑薄膜太阳能电池的光电转换效率。这种通过利用黑磷烯作为导电材料克服了传统导电材料的不足，为制备高效率的硒化锑薄膜太阳能电池提供了新思路。
附图说明：
附图是本发明提供的一种以黑磷烯作为导电材料的硒化锑薄膜太阳能电池的层结构示意图。
附图标号说明：
1—金属正面电极；
2—n型重掺杂黑磷烯薄膜；
3—n型二硫化钼薄膜；
4—本征氢化纳米晶硅薄膜；
5—p型硒化锑薄膜；
6—p型重掺杂黑磷烯衬底；
7—金属背面电极。
具体实施方式
下面结合附图和具体实施例对本发明作进一步说明，但本发明内容不仅限于实施例中涉及的内容。
本发明按附图所示结构，它包括从上至下依次分布的金属正面电极1、n型重掺杂黑磷烯薄膜2、n型二硫化钼薄膜3、本征氢化纳米晶硅薄膜4、p型硒化锑薄膜5、p型重掺杂黑磷烯衬底6、金属背面电极7。
实施例1：一种以黑磷烯作为导电材料的硒化锑薄膜太阳能电池的制备方法，按照以下步骤操作：
首先在p型重掺杂黑磷烯衬底上利用肼溶液法沉积p型硒化锑薄膜，然后在p型硒化锑薄膜上利用等离子体增强化学气相沉积法制备本征氢化纳米晶硅薄膜，再在本征氢化纳米晶硅薄膜上利用化学气相沉积法沉积n型二硫化钼薄膜，接着在n型二硫化钼薄膜上利用化学气相沉积法沉积n型重掺杂黑磷烯薄膜，最后在n型重掺杂黑磷烯薄膜表面以及p型重掺杂黑磷烯衬底上利用丝网印刷法分别沉积金属银电极，即制得所需要的以黑磷烯作为导电材料的硒化锑薄膜太阳能电池。
实施例2：首先在p型重掺杂黑磷烯衬底上利用磁控溅射法沉积p型硒化锑薄膜，然后在p型硒化锑薄膜上利用等离子体增强化学气相沉积法制备本征氢化纳米晶硅薄膜，再在本征氢化纳米晶硅薄膜上利用磁控溅射法沉积n型二硫化钼薄膜，接着在n型二硫化钼薄膜上利用机械剥离法沉积n型重掺杂黑磷烯薄膜，最后在n型重掺杂黑磷烯薄膜表面以及p型重掺杂黑磷烯衬底上利用蒸镀法分别沉积金属铝电极，即制得所需要的以黑磷烯作为导电材料的硒化锑薄膜太阳能电池。
实施例3：首先在p型重掺杂黑磷烯衬底上利用超声喷雾法沉积p型硒化锑薄膜，然后在p型硒化锑薄膜上利用等离子体增强化学气相沉积法制备本征氢化纳米晶硅薄膜，再在本征氢化纳米晶硅薄膜上利用磁控溅射法沉积n型二硫化钼薄膜，接着在n型二硫化钼薄膜上利用化学气相沉积法沉积n型重掺杂黑磷烯薄膜，最后在n型重掺杂黑磷烯薄膜表面以及p型重掺杂黑磷烯衬底上利用蒸镀法分别沉积金属银电极，即制得所需要的以黑磷烯作为导电材料的硒化锑薄膜太阳能电池。
实施例4：首先在p型重掺杂黑磷烯衬底上利用肼溶液法沉积p型硒化锑薄膜，然后在p型硒化锑薄膜上利用磁控溅射法制备本征氢化纳米晶硅薄膜，再在本征氢化纳米晶硅薄膜上利用化学气相沉积法沉积n型二硫化钼薄膜，接着在n型二硫化钼薄膜上利用机械剥离法沉积n型重掺杂黑磷烯薄膜，最后在n型重掺杂黑磷烯薄膜表面以及p型重掺杂黑磷烯衬底上利用蒸镀法分别沉积金属铝电极，即制得所需要的以黑磷烯作为导电材料的硒化锑薄膜太阳能电池。
实施例5：首先在p型重掺杂黑磷烯衬底上利用磁控溅射法沉积p型硒化锑薄膜，然后在p型硒化锑薄膜上利用磁控溅射法制备本征氢化纳米晶硅薄膜，再在本征氢化纳米晶硅薄膜上利用化学气相沉积法沉积n型二硫化钼薄膜，接着在n型二硫化钼薄膜上利用化学气相沉积法沉积n型重掺杂黑磷烯薄膜，最后在n型重掺杂黑磷烯薄膜表面以及p型重掺杂黑磷烯衬底上利用丝网印刷法分别沉积金属铝电极，即制得所需要的以黑磷烯作为导电材料的硒化锑薄膜太阳能电池。
实施例6：首先在p型重掺杂黑磷烯衬底上利用超声喷雾法沉积p型硒化锑薄膜，然后在p型硒化锑薄膜上利用磁控溅射法制备本征氢化纳米晶硅薄膜，再在本征氢化纳米晶硅薄膜上利用化学气相沉积法沉积n型二硫化钼薄膜，接着在n型二硫化钼薄膜上利用机械剥离法沉积n型重掺杂黑磷烯薄膜，最后在n型重掺杂黑磷烯薄膜表面以及p型重掺杂黑磷烯衬底上利用蒸镀法分别沉积金属银电极，即制得所需要的以黑磷烯作为导电材料的硒化锑薄膜太阳能电池。
Claims (1)
1.一种以黑磷烯作为导电材料的硒化锑薄膜太阳能电池的制备方法，其特征在于，首先在p型重掺杂黑磷烯衬底上利用肼溶液法或磁控溅射法或超声喷雾法沉积p型硒化锑薄膜，然后在p型硒化锑薄膜上利用等离子体增强化学气相沉积法或磁控溅射法制备本征氢化纳米晶硅薄膜，再在本征氢化纳米晶硅薄膜上利用化学气相沉积法或磁控溅射法沉积n型二硫化钼薄膜，接着在n型二硫化钼薄膜上利用化学气相沉积法或机械剥离法沉积n型重掺杂黑磷烯薄膜，最后在n型重掺杂黑磷烯薄膜表面以及p型重掺杂黑磷烯衬底上利用丝网印刷法或蒸镀法分别沉积金属正面和背面电极，即制得所需要的以黑磷烯作为导电材料的硒化锑薄膜太阳能电池。
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