CN104681653A - 多结层状薄膜太阳能电池 - Google Patents

多结层状薄膜太阳能电池 Download PDF

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CN104681653A
CN104681653A CN201310613326.7A CN201310613326A CN104681653A CN 104681653 A CN104681653 A CN 104681653A CN 201310613326 A CN201310613326 A CN 201310613326A CN 104681653 A CN104681653 A CN 104681653A
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宋太伟
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Shanghai Jianye Technology Engineering Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

一种多结层状薄膜太阳能电池，包括顶层和末层的正、负电极层，在顶层电极层与末层电极层之间设有多个PN结薄膜层，各PN结薄膜层之间设有连接层。本发明是基于碳、硅等普通绿色材料的、高光电转换效率的太阳能薄膜叠层电池，应用前景无限。

Description

多结层状薄膜太阳能电池
技术领域
本发明涉及太阳能电池，尤其涉及一种多结层状薄膜太阳能电池。
背景技术
开发利用太阳能是人类解决能源危机、环境危机的最主要途径之一，而绿色高效太阳能电池开发是广泛应用太阳能的关键技术与环节。当前硅基电池包括薄膜电池与硅片电池的光电转换效率不高，使用价值有限，而稳定效率达到23％以上的太阳能电池，如叠层砷化镓或铜铟镓硒或锗基等薄膜电池，都存在材料稀缺或有毒等问题，而且工艺复杂，没有社会广泛应用潜力。
发明内容
本发明的目的，就是为了解决上述问题，提供一种多结层状薄膜太阳能电池。
为了达到上述目的，本发明采用了以下技术方案：一种多结层状薄膜太阳能电池，包括顶层正电极层和末层负电极层，在顶层电极层与末层电极层之间设有多个PN结薄膜层，各PN结薄膜层之间设有连接层。
所述多个PN结薄膜层各PN结的P区与N区次序相同，即所有PN结的方向一致。
所述各PN结薄膜层是硅基掺杂的非晶或微晶P型半导体和N型半导体的同质结，或是由硅基P型或N型掺杂的非晶或微晶半导体和碳化硅N型或P型掺杂的非晶或微晶半导体组成的异质结。
所述多个PN结薄膜层中每个PN结薄膜层的厚度在3～2000纳米之间，并且前一层PN结薄膜层的厚度为后一层PN结薄膜层的厚度的1/3-1/20。
所述连接层为半导体材料、透明导电材料、氧化物或金属，厚度为0～2000纳米但不为零。
所述半导体材料包括本征硅或碳化硅；所述透明导电材料包括TCO、ITO等；所述氧化物包括氧化铝、氧化硅等；所述金属包括铜、铝、银、镁、钨、镍等纯金属或其合金等。
本发明是基于碳、硅等普通绿色材料的、高光电转换效率的太阳能薄膜叠层电池，应用前景无限。
附图说明
图1是本发明多结层状薄膜太阳能电池的基本结构示意图。
具体实施方式
参见图1，本发明多结层状薄膜太阳能电池，包括顶层电极层1和末层电极层2，在顶层电极层1与末层电极层2之间设有多个PN结薄膜层3，各PN结薄膜层之间设有连接层4。
本发明中的多个PN结薄膜层各PN结的P区与N区次序相同，即所有PN结的方向一致；各PN结薄膜层是硅基掺杂的非晶或微晶P型半导体和N型半导体的同质结，或是由硅基P型或N型掺杂的非晶或微晶半导体和碳化硅N型或P型掺杂的非晶或微晶半导体组成的异质结。
本发明中的多个PN结薄膜层中每个PN结薄膜层的厚度在3～2000纳米之间，并且前一层PN结薄膜层的厚度为后一层PN结薄膜层的厚度的1/3-1/20。
本发明中的连接层为半导体材料、透明导电材料、氧化物或金属，厚度为0～2000纳米但不为零；半导体材料包括本征硅或碳化硅；透明导电材料包括TCO或ITO；氧化物包括氧化铝、氧化硅等；金属包括铜、铝、银、镁、钨、镍等纯金属或其合金等。
本发明中的多个PN结薄膜层主要由高真空条件下的电磁控物理蒸镀、溅射及化学气相沉积工艺制成。

Claims (6)

1.一种多结层状薄膜太阳能电池，包括顶层电极层和末层电极层，其特征在于，在顶层电极层与末层电极层之间设有多个PN结薄膜层，各PN结薄膜层之间设有连接层。
2.如权利要求1所述的多结层状薄膜太阳能电池，其特征在于：所述多个PN结薄膜层各PN结的P区与N区次序相同，即所有PN结的方向一致。
3.如权利要求1所述的多结层状薄膜太阳能电池，其特征在于：所述各PN结薄膜层是硅基掺杂的非晶或微晶P型半导体和N型半导体的同质结，或是由硅基P型或N型掺杂的非晶或微晶半导体和碳化硅N型或P型掺杂的非晶或微晶半导体组成的异质结。
4.如权利要求1所述的多结层状薄膜太阳能电池，其特征在于：所述多个PN结薄膜层中每个PN结薄膜层的厚度在3～2000纳米之间，并且前一层PN结薄膜层的厚度为后一层PN结薄膜层的厚度的1/3-1/20。
5.如权利要求1所述的多结层状薄膜太阳能电池，其特征在于：所述连接层为半导体材料、透明导电材料、氧化物或金属，厚度为0～2000纳米但不为零。
6.如权利要求1所述的多结层状薄膜太阳能电池，其特征在于：所述半导体材料包括本征硅或碳化硅；所述透明导电材料包括TCO或ITO；所述氧化物包括氧化铝或氧化硅；所述金属包括铜、铝、银、镁、钨、镍或其合金。
CN201310613326.7A 2013-11-27 2013-11-27 多结层状薄膜太阳能电池 Pending CN104681653A (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024962A (zh) * 2016-07-08 2016-10-12 无锡市宝来电池有限公司 一种多结层状薄膜太阳能电池
CN107180887A (zh) * 2017-06-20 2017-09-19 上海日岳新能源有限公司 一种多结叠层薄膜太阳能电池内部结之间耦合连接工艺
CN114337520A (zh) * 2021-11-29 2022-04-12 江苏澄擎新能源有限公司 一种半柔性高质量太阳能面板结构

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024962A (zh) * 2016-07-08 2016-10-12 无锡市宝来电池有限公司 一种多结层状薄膜太阳能电池
CN107180887A (zh) * 2017-06-20 2017-09-19 上海日岳新能源有限公司 一种多结叠层薄膜太阳能电池内部结之间耦合连接工艺
CN114337520A (zh) * 2021-11-29 2022-04-12 江苏澄擎新能源有限公司 一种半柔性高质量太阳能面板结构

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