CN104733559A - 多层扩展pn结薄膜太阳能电池 - Google Patents
多层扩展pn结薄膜太阳能电池 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 239000002131 composite material Substances 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
一种多层扩展PN结薄膜太阳能电池，包括正电极层和负电极层，在正电极层与负电极层之间设有多个P-I-N结复合层，各P-I-N结复合层之间设有连接层。其中的P-I-N结复合层由P型薄膜层、I本征层和N型薄膜层顺序层叠构成。本发明是基于硅等普通绿色材料的、高光电转换效率的太阳能薄膜叠层电池，应用前景无限。
Description
技术领域
本发明涉及太阳能电池，尤其涉及一种多层扩展PN结薄膜太阳能电池。
背景技术
开发利用太阳能是人类解决能源危机、环境危机的最主要途径之一，而绿色高效太阳能电池开发是广泛应用太阳能的关键技术与环节。当前硅基电池包括薄膜电池与硅片电池的光电转换效率不高，使用价值有限，而稳定效率达到23％以上的太阳能电池，如叠层砷化镓或铜铟镓硒或锗基等薄膜电池，都存在材料稀缺或有毒等问题，而且工艺复杂，没有社会广泛应用潜力。
发明内容
本发明的目的，就是为了解决上述问题，提供一种多层扩展PN结薄膜太阳能电池。
为了达到上述目的，本发明采用了以下技术方案：一种多层扩展PN结薄膜太阳能电池，包括正电极层和负电极层，在正电极层与负电极层之间设有多个P-I-N结复合层，各P-I-N结复合层之间设有连接层。
所述多个P-I-N结复合层各P-I-N结的P区与N区次序相同，即所有P-I-N结的方向一致。
所述P-I-N结复合层由P型薄膜层、I本征层和N型薄膜层顺序层叠构成，每个P-I-N结复合层中的P型薄膜层和N型薄膜层为硅基掺杂的非晶或微晶P型半导体或N半导体的I本征层同质材料，或是由与I本征层不同质的N型或P型掺杂的非晶或微晶半导体构成；其中的I本征层的厚度为1-1200纳米，P型薄膜层和N型薄膜层的厚度小于I本征层的厚度。
所述P-I-N结复合层的厚度在5～2000纳米之间。
所述连接层为半导体材料、透明导电材料、氧化物或金属，厚度为0～1000纳米但不为零。
所述半导体材料包括本征硅或碳化硅；所述透明导电材料包括TCO或ITO；所述氧化物包括氧化铝或氧化硅；所述金属包括铜或铝。
本发明是基于硅等普通绿色材料的、高光电转换效率的太阳能薄膜叠层电池，应用前景无限。
附图说明
图1是本发明多层扩展PN结薄膜太阳能电池的基本结构示意图；
图2是本发明中的P-I-N结复合层的结构示意图。
具体实施方式
参见图1，本发明多层扩展PN结薄膜太阳能电池，包括正电极层1和负电极层2，在正电极层1与负电极层2之间设有多个P-I-N结复合层3，各P-I-N结复合层之间设有连接层4。
多个P-I-N结复合层各P-I-N结的P区与N区次序相同，即所有P-I-N结的方向一致。
参见图2，本发明中的P-I-N结复合层3由P型薄膜层31、I本征层32和N型薄膜层33顺序层叠构成，厚度在5～2000纳米之间。每个P-I-N结复合层中的P型薄膜层和N型薄膜层为硅基掺杂的非晶或微晶P型半导体或N半导体的I本征层同质材料，或是由与I本征层不同质的N型或P型掺杂的非晶或微晶半导体构成；其中的I本征层的厚度为1-1200纳米，P型薄膜层和N型薄膜层的厚度小于I本征层的厚度。
本发明中的连接层4为半导体材料、透明导电材料、氧化物或金属，厚度为0～1000纳米但不为零。半导体材料包括本征硅或碳化硅；所述透明导电材料包括TCO或ITO；所述氧化物包括氧化铝或氧化硅；所述金属包括铜或铝。
本发明中的多个P-I-N结薄膜层主要由高真空条件下的电磁控物理蒸镀、溅射及化学气相沉积工艺制成。
Claims (6)
1.一种多层扩展PN结薄膜太阳能电池，包括正电极层和负电极层，其特征在于，在正电极层与负电极层之间设有多个P-I-N结复合层，各P-I-N结复合层之间设有连接层。
2.如权利要求1所述的多层扩展PN结薄膜太阳能电池，其特征在于：所述多个P-I-N结复合层各P-I-N结的P区与N区次序相同，即所有P-I-N结的方向一致。
3.如权利要求1所述的多层扩展PN结薄膜太阳能电池，其特征在于：所述P-I-N结复合层由P型薄膜层、I本征层和N型薄膜层顺序层叠构成，每个P-I-N结复合层中的P型薄膜层和N型薄膜层为硅基掺杂的非晶或微晶P型半导体或N半导体的I本征层同质材料，或是由与I本征层不同质的N型或P型掺杂的非晶或微晶半导体构成；其中的I本征层的厚度为1～1200纳米，P型薄膜层和N型薄膜层的厚度小于I本征层的厚度。
4.如权利要求1所述的多层扩展PN结薄膜太阳能电池，其特征在于：所述P-I-N结复合层的厚度在5～2000纳米之间。
5.如权利要求1所述的多层扩展PN结薄膜太阳能电池，其特征在于：所述连接层为半导体材料、透明导电材料、氧化物或金属，厚度为0～1000纳米但不为零。
6.如权利要求1所述的多层扩展PN结薄膜太阳能电池，其特征在于：所述半导体材料包括本征硅或碳化硅；所述透明导电材料包括TCO或ITO；所述氧化物包括氧化铝或氧化硅；所述金属包括铜或铝。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024962A (zh) * | 2016-07-08 | 2016-10-12 | 无锡市宝来电池有限公司 | 一种多结层状薄膜太阳能电池 |
Citations (4)
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| CN102569478A (zh) * | 2012-02-23 | 2012-07-11 | 常州天合光能有限公司 | 薄膜非晶硅-n型晶体硅异质结叠层太阳能电池 |
| CN202423352U (zh) * | 2011-12-08 | 2012-09-05 | 嘉兴学院 | 一种硅基双结叠层太阳电池 |
| CN103022209A (zh) * | 2011-09-22 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | 新型中间层金属氧化物制作高效率双结硅薄膜太阳能电池 |
| CN103219429A (zh) * | 2013-04-22 | 2013-07-24 | 浙江正泰太阳能科技有限公司 | 叠层太阳能电池及其制备方法 |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022209A (zh) * | 2011-09-22 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | 新型中间层金属氧化物制作高效率双结硅薄膜太阳能电池 |
| CN202423352U (zh) * | 2011-12-08 | 2012-09-05 | 嘉兴学院 | 一种硅基双结叠层太阳电池 |
| CN102569478A (zh) * | 2012-02-23 | 2012-07-11 | 常州天合光能有限公司 | 薄膜非晶硅-n型晶体硅异质结叠层太阳能电池 |
| CN103219429A (zh) * | 2013-04-22 | 2013-07-24 | 浙江正泰太阳能科技有限公司 | 叠层太阳能电池及其制备方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024962A (zh) * | 2016-07-08 | 2016-10-12 | 无锡市宝来电池有限公司 | 一种多结层状薄膜太阳能电池 |
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