CN106020767B - 基于一阶广义忆阻器的加法器运算电路 - Google Patents

基于一阶广义忆阻器的加法器运算电路 Download PDF

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CN106020767B
CN106020767B CN201610348685.8A CN201610348685A CN106020767B CN 106020767 B CN106020767 B CN 106020767B CN 201610348685 A CN201610348685 A CN 201610348685A CN 106020767 B CN106020767 B CN 106020767B
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杜玮嘉
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Abstract

一阶广义忆阻器的二极管文氏电桥电路，其特征在于：该电路由二极管(1N4148)、电容和电阻组成，二极管(1N4148)实现文氏电桥功能，电容和电阻组成RC振荡电路。本发明提出了以一阶广义忆阻器的二极管文氏电桥电路为基础，实现模拟电路中的反相、加法、积分、微分、指数和对数运算，为应用非常广泛的正弦波RC振荡电路,具有振荡较稳定、波形良好、振荡频率在较宽的范围内能方便地连续调节等优点的文氏桥振荡器提供了一种平台。

Description

基于一阶广义忆阻器的加法器运算电路
技术领域
发明涉及一系列的模拟运算电路，特别是基于一阶广义忆阻器的加法器运算电路。
背景技术
自纳米级忆阻器的物理可实现性报道以来，基于忆阻器的各种应用电路中，忆阻混沌电路得到了较为广泛的研究，并有大量的成果报道，忆阻器是一种非线性电路元件，与其他三种基本电路元件进行有机连接，很容易构建出各种基于忆阻器，忆阻器被用于混沌学的研究已经产生了比较深远的影响，但是将忆阻器单独的运用到模拟电路中，实现数学中的基本运算在国内外还比较少，为此，本发明提出了以一阶广义忆阻器的二极管文氏电桥电路为基础，实现模拟电路中的反相、加法、积分、微分、指数和对数运算，为应用非常广泛的正弦波RC振荡电路，具有振荡较稳定、波形良好、振荡频率在较宽的范围内能方便地连续调节等优点的文氏桥振荡器提供了一种平台。
发明内容
基于一阶广义忆阻器的加法器运算电路，其特征在于：所述基于一阶广义忆阻器的加法器运算电路由电阻，一阶广义忆阻器和运算放大器LF347BN组成，所述一阶广义忆阻器由二极管1N4148、电容和电阻组成，二极管1N4148实现文氏电桥功能，电容和电阻组成RC振荡电路；二极管D1的正极接二极管D4的负极，接一阶广义忆阻器的输入端，所述二极管D1的负极接电容C0的一端，接二极管D2的负极，所述二极管D2的正极接二极管D3的负极，接一阶广义忆阻器的输出端，所述二极管D2的负极接电容的一端，所述二极管D3的负极接二极管D2的正极，接一阶广义忆阻器的输出端，所述二极管D3的正极接二极管D4的正极，接电容C0的另一端，接地，所述二极管D4的正极接二极管D3的正极，接电容C0的另一端，接地，所述二极管D4的负极接二极管D1的正极，接忆阻器的输入端，所述电容C0的一端接电阻R0的一端，所述电容C0的另一端接电阻R0的另一端，接地；根据二极管文氏电桥的电路得出以下关系式：
设定一阶广义忆阻器两端输入电压和电流分别为Vm和Im，电容C0两端电压为V0，其数学模型为：
其中，ρ＝1/(2nVT)；Is，n和VT分别表示二极管反向饱和电流、发射系数和热电压，C0为电容C0的电容值，R0为电阻R0的电阻值，由此，可以推导出广义忆阻器的忆导表达式为
所述运算放大器LF347BN的负输入端通过电阻Ri2接加法器的第一路输入，通过电阻Ri3接加法器的第二路输入，通过电阻Ri4接加法器的第三路输入，通过忆阻器Rm2接运算放大器LF347BN的输出端，运算放大器LF347BN的正输入端接地，运算放大器LF347BN的正电源端接VCC，负电源端接VEE；设加法器的输入电压分别为Ui2、Ui3和Ui4，对应输入电阻Ri2、Ri3和Ri4上的电流为IRi2、IRi3和IRi4，忆阻器上的电压为Vm2，电流为IRm2，加法器的输出电压为Uo2，其中，Ri2、Ri3和Ri4表示电阻Ri2、Ri3和Ri4的阻值，
根据加法器电路结构和运算电路“虚短”和“虚断”原则得出：IRm2＝IRi2+IRi3+IRi4，Vm2＝Uo2，
有益效果：本发明提出了以一阶广义忆阻器的二极管文氏电桥电路为基础，实现模拟电路中的反相、加法、积分、微分、指数和对数运算，为应用非常广泛的正弦波RC振荡电路，具有振荡较稳定、波形良好、振荡频率在较宽的范围内能方便地连续调节等优点的文氏桥振荡器提供了一种平台。
附图说明
图1为实现一阶广义忆阻器的二极管文氏电桥电路。
图2为实现基于忆阻器的加法运算电路。
具体实施方式
下面结合附图和优选实施例对本发明作更进一步的详细描述，参见图1-图2。
1.基于一阶广义忆阻器的加法器运算电路，其特征在于：所述基于一阶广义忆阻器的加法器运算电路由电阻，一阶广义忆阻器和运算放大器LF347BN组成，所述一阶广义忆阻器由二极管1N4148、电容和电阻组成，二极管1N4148实现文氏电桥功能，电容和电阻组成RC振荡电路；二极管D1的正极接二极管D4的负极，接一阶广义忆阻器的输入端，所述二极管D1的负极接电容C0的一端，接二极管D2的负极，所述二极管D2的正极接二极管D3的负极，接一阶广义忆阻器的输出端，所述二极管D2的负极接电容的一端，所述二极管D3的负极接二极管D2的正极，接一阶广义忆阻器的输出端，所述二极管D3的正极接二极管D4的正极，接电容C0的另一端，接地，所述二极管D4的正极接二极管D3的正极，接电容C0的另一端，接地，所述二极管D4的负极接二极管D1的正极，接忆阻器的输入端，所述电容C0的一端接电阻R0的一端，所述电容C0的另一端接电阻R0的另一端，接地；根据二极管文氏电桥的电路得出以下关系式：
设定一阶广义忆阻器两端输入电压和电流分别为Vm和Im，电容C0两端电压为V0，其数学模型为：
其中，ρ＝1/(2nVT)；Is，n和VT分别表示二极管反向饱和电流、发射系数和热电压，C0为电容C0的电容值，R0为电阻R0的电阻值，由此，可以推导出广义忆阻器的忆导表达式为
所述运算放大器LF347BN的负输入端通过电阻Ri2接加法器的第一路输入，通过电阻Ri3接加法器的第二路输入，通过电阻Ri4接加法器的第三路输入，通过忆阻器Rm2接运算放大器LF347BN的输出端，运算放大器LF347BN的正输入端接地，运算放大器LF347BN的正电源端接VCC，负电源端接VEE；设加法器的输入电压分别为Ui2、Ui3和Ui4，对应输入电阻Ri2、Ri3和Ri4上的电流为IRi2、IRi3和IRi4，忆阻器上的电压为Vm2，电流为IRm2，加法器的输出电压为Uo2，其中，Ri2、Ri3和Ri4表示电阻Ri2、Ri3和Ri4的阻值，
根据加法器电路结构和运算电路“虚短”和“虚断”原则得出：IRm2＝IRi2+IRi3+IRi4，Vm2＝Uo2，
当然，上述说明并非对发明的限制，本发明也不仅限于上述举例，本技术领域的普通技术人员在本发明的实质范围内所做出的变化、改型、添加或替换，也属于本发明的保护范围。

Claims (1)

1.基于一阶广义忆阻器的加法器运算电路，其特征在于：所述基于一阶广义忆阻器的加法器运算电路由电阻，一阶广义忆阻器和运算放大器LF347BN组成，所述一阶广义忆阻器由二极管1N4148、电容和电阻组成，二极管1N4148实现文氏电桥功能，电容和电阻组成RC振荡电路；二极管D1的正极接二极管D4的负极，接一阶广义忆阻器的输入端，所述二极管D1的负极接电容C0的一端，接二极管D2的负极，所述二极管D2的正极接二极管D3的负极，接一阶广义忆阻器的输出端，所述二极管D2的负极接电容的一端，所述二极管D3的负极接二极管D2的正极，接一阶广义忆阻器的输出端，所述二极管D3的正极接二极管D4的正极，接电容C0的另一端，接地，所述二极管D4的正极接二极管D3的正极，接电容C0的另一端，接地，所述二极管D4的负极接二极管D1的正极，接忆阻器的输入端，所述电容C0的一端接电阻R0的一端，所述电容C0的另一端接电阻R0的另一端，接地；根据二极管文氏电桥的电路得出以下关系式：
设定一阶广义忆阻器两端输入电压和电流分别为Vm和Im，电容C0两端电压为V0，其数学模型为：
其中，ρ＝1/(2nVT)；Is，n和VT分别表示二极管反向饱和电流、发射系数和热电压，C0为电容C0的电容值，R0为电阻R0的电阻值，由此，可以推导出广义忆阻器的忆导表达式为
所述运算放大器LF347BN的负输入端通过电阻Ri2接加法器的第一路输入，通过电阻Ri3接加法器的第二路输入，通过电阻Ri4接加法器的第三路输入，通过忆阻器Rm2接运算放大器LF347BN的输出端，运算放大器LF347BN的正输入端接地，运算放大器LF347BN的正电源端接VCC，负电源端接VEE；设加法器的输入电压分别为Ui2、Ui3和Ui4，对应输入电阻Ri2、Ri3和Ri4上的电流为IRi2、IRi3和IRi4，忆阻器上的电压为Vm2，电流为IRm2，加法器的输出电压为Uo2，其中，Ri2、Ri3和Ri4表示电阻Ri2、Ri3和Ri4的阻值，根据加法器电路结构和运算电路“虚短”和“虚断”原则得出：IRm2＝IRi2+IRi3+IRi4，Vm2＝Uo2，
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