CN105990494A - Flip-chip type light emitting diode and fabrication method thereof - Google Patents
Flip-chip type light emitting diode and fabrication method thereof Download PDFInfo
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- CN105990494A CN105990494A CN201510085454.8A CN201510085454A CN105990494A CN 105990494 A CN105990494 A CN 105990494A CN 201510085454 A CN201510085454 A CN 201510085454A CN 105990494 A CN105990494 A CN 105990494A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Abstract
The present invention relates to a flip-chip type light emitting diode and a fabrication method thereof. The flip-chip type light emitting diode includes a first metal sheet, a second metal sheet, a bonding material and a light emitting diode chip; a gap is left between the first metal sheet and the second metal sheet; the bonding material is injected into the gap and is solidified, so that the first metal sheet and the second metal sheet can be bonded together; the solidified bonding material has a top surface which is flush with the top surfaces of the first metal sheet and the second metal sheet; the light emitting diode chip is bonded with the top surface of the first metal sheet and the top surface of the second metal sheet through solder; the light emitting diode chip is provided with a positive pole and a negative pole which are electrically connected with circuit patterns on the first metal sheet and the second metal sheet respectively.
Description
Technical field
The present invention is related to a kind of crystal-coated light-emitting diodes and manufacture method thereof, can reduce into especially with regard to one
The crystal-coated light-emitting diodes of basis also improving heat radiation efficiency and manufacture method thereof.
Background technology
Compared with conventional light source, owing to light emitting diode (LED) has high luminous efficiency and low energy loss,
It has been widely used and has been used as light source.In actual application, light-emitting diode assembly is by multiple light-emitting diodes
Pipe is assembled in series or in parallel on same substrate and is formed, to reach the effect of luminescence.But,
While multiple light emitting diodes produce light, also create substantial amounts of heat, particularly when multiple light emitting diodes are with height
Density assembled on the same substrate time, cannot effectively be exhaled, by right on substrate if heat accumulates in
Light-emitting diode assembly causes bad impact.
As the packaged type of light emitting diode, it is currently known the packaged type being referred to as flip (flip-chip).
Positive pole and the negative pole of light-emitting diode chip for backlight unit are mainly arranged on it towards circuit base by the packaged type of this kind of flip
The surface of plate, and the mode through welding makes the positive pole of light-emitting diode chip for backlight unit and negative pole is the most direct and circuit substrate
Contact, now, produced by light-emitting diode chip for backlight unit luminescence, heat will transmit through the straight of its positive pole and negative pole and circuit substrate
Contact and be delivered to circuit substrate.In order to avoid the bad impact that light emitting diode is caused of above-mentioned heat radiation, arrange
The circuit substrate having light-emitting diode chip for backlight unit generally comprises the substrate of wire Copper Foil, dielectric ink, metal or pottery magnetic originally
Body and radiator structure, to go out the thermal transpiration transmitted from light-emitting diode chip for backlight unit.But, in the middle of this,
Owing to the heat dissipation path of light-emitting diode chip for backlight unit need to be via the solder contacted with circuit substrate, wire Copper Foil, insulating oil
Ink, metal or the substrate body of pottery magnetic and radiator structure just can exhale, and the thermal resistance of its entirety is higher,
It is unable to reach optimal radiating effect.Additionally, due to the structure of above-mentioned this circuit substrate comprises many assemblies, its
The process manufactured is complex, and cost is also difficult to reduce.
Summary of the invention
In order to solve above-mentioned problem, it is an object of the invention to provide one and can reduce cost improving heat radiation efficiency
Crystal-coated light-emitting diodes and manufacture method.
Be to provide a kind of crystal-coated light-emitting diodes according to one embodiment of the invention, it include the first sheet metal, the
Two sheet metals, grafting material and light-emitting diode chip for backlight unit.Have between one between first sheet metal and the second sheet metal
Gap, grafting material is injected in the middle of this gap and is cured, so that the first sheet metal and the second sheet metal are bonded on one
Rise.Grafting material after solidification has an end face, and it flushes with the end face of the first sheet metal and the second sheet metal.Send out
Luminous diode chip engages through the end face of solder the first sheet metal respectively and the end face of the second sheet metal, wherein, sends out
Luminous diode chip has a positive pole and a negative pole, its respectively with the circuit diagram on the first sheet metal and the second sheet metal
Case electrically connects.
It is to provide a kind of method manufacturing crystal-coated light-emitting diodes, the method bag according to another embodiment of the present invention
Include: provide on short side direction multiple long-bar metal sheets of spaced-apart relation, any two neighboring strips sheet metals it
Between there is a gap；Grafting material is injected separately in the gap between multiple long-bar metal sheet；Solidification engages material
Material is with by multiple long-bar metal chip bondings together；Circuit pattern is printed onto on engaged multiple long-bar metal sheets；
Thering is provided multiple light-emitting diode chip for backlight unit, each light-emitting diode chip for backlight unit is fixed on these engaged length through solder
On the end face of any two neighboring strips sheet metals of bar sheet metal, wherein, the positive pole of each light-emitting diode chip for backlight unit and
Negative pole electrically connects with the circuit pattern on these two neighboring strips sheet metals respectively；And short along long-bar metal sheet
Edge direction, multiple long-bar metal sheets that cutting is engaged.
According to above-mentioned the provided crystal-coated light-emitting diodes of the present invention and manufacture method thereof, due to the flip of the present invention
Adjacent sheet metal joint only need to be fixed together by formula light emitting diode by the grafting material of solidification, and circuit diagram
Case is directly printed on sheet metal and is connected with the positive pole and negative electricity with light-emitting diode chip for backlight unit, and therefore, the present invention is not
Need to provide stability by other board unit, it is possible to reach the crystal-coated light-emitting diodes that can operate,
And this crystal-coated light-emitting diodes possesses and has reduction manufacturing cost and promote scattered because of the minimizing of the thermal resistance of its entirety
The advantage of the thermal efficiency.
About more detailed description of the present invention and advantage, refer to following embodiment and accompanying drawing.
Accompanying drawing explanation
Fig. 1 is the schematic perspective view of the crystal-coated light-emitting diodes according to the first embodiment of the present invention；
Fig. 2 is the schematic side view of Fig. 1；
Fig. 3 A to 3E display is according to the schematic diagram of the method manufacturing crystal-coated light-emitting diodes of the present invention；
Fig. 4 A is the three-dimensional signal of the one-dimension array of the crystal-coated light-emitting diodes according to the first embodiment of the present invention
Figure；
Fig. 4 B is the schematic side view of Fig. 4 A；
Fig. 5 is the crystal-coated light-emitting diodes according to the second embodiment of the present invention and the one-dimension array that formed thereof
Schematic perspective view；
Fig. 6 is the schematic diagram of the light-emitting diode assembly according to the present invention；And
Fig. 7 is the schematic diagram of the another kind of light-emitting diode assembly according to the present invention.
Symbol description
3: grafting material
4: light-emitting diode chip for backlight unit
5: long-bar metal sheet
51, the 51A: the first sheet metal
52, the 52A: the second sheet metal
510,520,30: end face
511A, 521A: bottom surface
512A, 522A: radiator structure
15,50: gap
40: solder
100,100A: crystal-coated light-emitting diodes
The one-dimension array of 200,200A: light emitting diode
201: positive pole
202: negative pole
205: cathode metal sheet
206: negative metal sheet
207: sheet metal
300,400: light-emitting diode assembly
Detailed description of the invention
Fig. 1 and Fig. 2 shows the crystal-coated light-emitting diodes according to the first embodiment of the present invention.
Refering to Fig. 1 and Fig. 2, according to the crystal-coated light-emitting diodes 100 of the present invention include the first sheet metal 51,
Two sheet metals 52, grafting material 3 and light-emitting diode chip for backlight unit 4.First sheet metal 51 and the second sheet metal 52
Being joined together through grafting material 3, wherein, grafting material 3 is injected into the first sheet metal 51 and second
It is cured in 15 in gap 15 between sheet metal 52 and in this gap.The end face of the grafting material 3 after solidification
30 flush with the end face 520 of the second sheet metal 52 with the end face 510 of the first sheet metal 51.By solder 40,
The end face 510 of light-emitting diode chip for backlight unit 4 first sheet metal 51 respectively and the end face 520 of the second sheet metal 52 engage,
And its positive pole (not shown) and negative pole (not shown) respectively with the circuit on the first sheet metal 51 and the second sheet metal 52
Pattern (not shown) electrically connects.
Additionally, the grafting material in the gap 15 for being injected between the first sheet metal 51 and the second sheet metal 52
3 preferably can use epoxy resin or other materials being suitable for, and these materials can be by light (such as, ultraviolet light etc.)
Irradiate or other mode and be cured.
Additionally, as in figure 2 it is shown, owing to light-emitting diode chip for backlight unit 4 is to be joined to the first sheet metal through solder 40
51 and second sheet metal 52, light-emitting diode chip for backlight unit 4 and first, second sheet metal 51,52 and grafting material 3
Between be formed with a space.It is preferred that in order to reach to avoid heat produced by luminous diode chip 4 to accumulate in this sky
In the middle of between, pointing (not shown) can be used to be filled up in this space.
Fig. 3 A to Fig. 3 D display is according to the schematic diagram of the method manufacturing crystal-coated light-emitting diodes of the present invention.
First, as shown in Figure 3A, providing multiple long-bar metal sheet 5 in support structure (not shown), it is being grown
On the short side direction of bar sheet metal 5 (as shown in the arrow A in Fig. 3 A) spaced-apart relation so that any two
There is between neighboring strips sheet metal 5 gap 50.The width of this gap 50 corresponds to light-emitting diode chip for backlight unit
Distance required between positive pole and negative pole.In this step, it should be noted that, multiple long-bar metal sheets 5 can be by it
On be formed with multiple gap the sheet metal of whole piece replace, also can reach identical effect.
Then, as shown in Figure 3 B, grafting material 3 (such as: epoxy resin) is injected separately into multiple strip
In gap 50 between sheet metal 5, and solidify grafting material 3 in the way of heat cure or UV solidification, with
Multiple long-bar metal sheets 5 are bonded together.Additionally, in the situation using epoxy resin to be used as grafting material 3
Under, multiple long-bar metal sheets 5 are arranged on surface to be had on the support structure of epoxy resin release sheet, so that being consolidated
Multiple long-bar metal sheets 5 that the epoxy resin changed is bonded together can depart from from support structure.
It follows that form circuit pattern (not shown) on engaged multiple long-bar metal sheets 5.This step
Use connect by the position of positive and negative electrode and the paste solder printing steel plate set of size that would correspond to light-emitting diode chip for backlight unit
The long-bar metal sheet 5 closed, by solder paste coating to engaged multiple long-bar metal sheets 5, and removes paste solder printing
Steel plate is reached.
Subsequently, as shown in Figure 3 C, multiple light-emitting diode chip for backlight unit 4 are arranged these engaged long-bar metals
On sheet 5.In details of the words, each light-emitting diode chip for backlight unit 4 is to be placed on the tin cream position of correspondence, and mat
The top of any two neighboring strips sheet metals 5 of these engaged long-bar metal sheets 5 it is fixed in by the mode of reflow
On face, and wherein, the positive pole of each light-emitting diode chip for backlight unit 4 and negative pole (not shown) respectively with these two adjacent length
Circuit pattern (not shown) electrical connection on bar sheet metal 5.
It follows that as shown in Figure 3 D, along the short side direction being parallel to long-bar metal sheet 5 cut direction (as
Shown in arrow B in Fig. 3 D), engaged multiple long-bar metal sheets 5 are cut, to form multiple crystal covering type
The one-dimension array 200 of light emitting diode.This step can be reached by the equipment of laser cutting or high pressure waterjet etc.,
But it is not limited thereto.
Finally, as shown in FIGURE 3 E, via cutting the one-dimension array 200 of this crystal-coated light-emitting diodes further,
Crystal-coated light-emitting diodes 100 by the available first embodiment of the present invention as shown in Figures 1 and 2.
It is preferred that according to the present invention above-mentioned manufacture crystal-coated light-emitting diodes method, by grafting material 3
When being injected separately in the gap 50 between multiple long-bar metal sheet 5, the amount of grafting material 3 is controlled as substantially
Volume corresponding to gap 50 so that the grafting material 3 after solidification can fill up multiple long-bar metal sheet 5 just
Gap 50.
Should be noted, although the above-mentioned manufacture method of the present invention mainly for the manufacture of crystal-coated light-emitting diodes, but
As long as in the step of the multiple long-bar metal sheets being connected to be engaged by light-emitting diode chip for backlight unit, add by routing
Gold thread is connected to the step of the correspondence position on multiple long-bar metal sheets of being engaged, the system that the present invention is above-mentioned by equipment
The method of making is equally applicable for manufacturing the most rectilinear or light emitting diode of horizontal.
Fig. 4 A and one-dimension array that Fig. 4 B is the crystal-coated light-emitting diodes according to the first embodiment of the present invention
Schematic diagram.
As shown in fig. 4 a and fig. 4b, one-dimensional according to the crystal-coated light-emitting diodes of the first embodiment of the present invention
Array 200 includes the interconnective multiple crystal-coated light-emitting diodes 100 arranged in the way of one-dimension array.Its
In, the first sheet metal 51 of any one crystal-coated light-emitting diodes 100 is connected to another adjacent crystal covering type and sends out
Second sheet metal 52 of optical diode 100.
According to above-mentioned disclosed content, know art technology personage it is understood that the crystal covering type of the present invention
The one-dimension array 200 of light emitting diode is not only able to be to be connected with each other by multiple crystal-coated light-emitting diodes 100 to form,
And also can directly use the one-dimension array 200 of crystal-coated light-emitting diodes as shown in Figure 3 D.Feelings the latter
In condition, the first sheet metal 51 of any one crystal-coated light-emitting diodes 100 and another adjacent crystal-coated light-emitting
Second sheet metal 52 of diode 100 be formed in one (that is, by the same length shown in Fig. 3 A to 3D
Bar sheet metal 5 is formed).
Thereby, user directly can use according to demand by manufacture crystal-coated light-emitting two pole above-mentioned according to the present invention
The one-dimension array 200 (as shown in Figure 3 D) of the crystal-coated light-emitting diodes made by the method for pipe or use this
The crystal-coated light-emitting diodes 100 that the one-dimension array 200 of crystal-coated light-emitting diodes is cut is (such as Fig. 3 E
Shown in) or use multiple crystal-coated light-emitting diodes 100 to be interconnected to the one-dimensional of crystal-coated light-emitting diodes
Array 200 (as shown in fig. 4 a and 4b) or further by a dimension of multiple crystal-coated light-emitting diodes
Group 200 is combined into a light-emitting diode assembly (as shown in FIG. 6 and 7) use and (sees subsequent figures 6 and Fig. 7
Detailed description).
In sum, the crystal-coated light-emitting diodes provided according to the first embodiment of the present invention and manufacture method thereof,
Owing to adjacent sheet metal only need to be engaged by the crystal-coated light-emitting diodes of the present invention by the grafting material of solidification
It is fixed together, connects without through substrate or other assembly, and light-emitting diode chip for backlight unit is directly with direct
The circuit pattern electrical connection being printed on sheet metal, therefore, has wire Copper Foil, insulating oil compared to known including
The crystal-coated light-emitting diodes of the circuit substrate of the substrate body of ink, metal or pottery magnetic, the present invention only passes through solder
The crystal-coated light-emitting diodes heat that light-emitting diode chip for backlight unit produces distributed with sheet metal can have really
Effect ground reduces the thermal resistance of its entirety, reaches more preferably radiating effect.Additionally, due to the crystal-coated light-emitting two of the present invention
The structure of pole pipe is very simple, and it also has the advantage of the manufacturing cost that light emitting diode can be greatly reduced.
Fig. 5 is the crystal-coated light-emitting diodes according to the second embodiment of the present invention and the one-dimension array that formed thereof
Schematic perspective view.
As it is shown in figure 5, the crystal-coated light-emitting diodes 100A of the second embodiment of the present invention possesses with the present invention's
The structure that the crystal-coated light-emitting diodes 100 of first embodiment is roughly the same, its difference is, the present invention's
The first sheet metal 51A and the second sheet metal 52A of the crystal-coated light-emitting diodes 100A of the second embodiment is respectively
Have from its bottom surface 511A, 521A outward extending radiator structure 512A, 522A.This radiator structure 512A,
522A is preferably a kind of bottom surface 511A, 521A from the first sheet metal 51A and the second sheet metal 52A vertically
Outward extending radiating fin, and it is formed in one with the first sheet metal 51A and the second sheet metal 52A respectively
's.Therefore, it is similar to the one-dimension array 200 of the crystal-coated light-emitting diodes of the first embodiment of the present invention, this
The crystal-coated light-emitting diodes 100A of the second bright embodiment also can be joined together to form another kind of crystal covering type
One-dimension array 200A of light emitting diode.
Additionally, be related to this crystal-coated light-emitting diodes 100A and the manufacture of one-dimension array 200A formed thereof
Method, can use the manufacture method being similar to above-mentioned first embodiment, and it the difference is that only that use has heat radiation
The long-bar metal sheet of structure replaces the long-bar metal sheet 5 without radiator structure as shown in Fig. 3 A to Fig. 3 D.
Accordingly, the crystal-coated light-emitting diodes provided according to the second embodiment of the present invention and one-dimension array thereof, remove
Outside possessing such as the advantage of the crystal-coated light-emitting diodes of the above-mentioned first embodiment of the present invention, also can be by wherein
Radiator structure increase the area of heat radiation, reach more preferably radiating effect, to avoid produced heat to luminous two
Pole pipe causes bad impact.Although it is noted that the crystal-coated light-emitting that the second embodiment of the present invention is provided
Diode be the radiator structure using fin type to make area of dissipation increase, but the invention is not limited in this.True
On, art technology personage, also can be directly by first it is understood that in the case of not considering space problem
The area of sheet metal and the second sheet metal strengthens and makes area of dissipation increase, to reach same radiating effect.
Fig. 6 and Fig. 7 is the schematic diagram of two kinds of different light-emitting diode assemblies according to the present invention.
As shown in Figure 6, include substantially in arranged in parallel many according to a kind of light-emitting diode assembly 300 of the present invention
The one-dimension array 200 of individual crystal-coated light-emitting diodes, wherein, the one-dimension array of each crystal-coated light-emitting diodes
The positive pole 201 of 200 is positioned at the side of light-emitting diode assembly 300 and is connected with each other through cathode metal sheet 205,
Further, the negative pole 202 of the one-dimension array 200 of each crystal-coated light-emitting diodes is positioned at light-emitting diode assembly
The opposite side of 300 and being connected with each other through negative metal sheet 206.In other words, according to the light emitting diode of the present invention
Device 300 has large-area for a kind of one-dimension array 200 of multiple crystal-coated light-emitting diodes being connected in parallel
Light-emitting diode assembly.
As it is shown in fig. 7, include substantially in arranged in parallel according to the another kind of light-emitting diode assembly 400 of the present invention
The one-dimension array 200 of multiple crystal-coated light-emitting diodes, the one-dimension array 200 of any one crystal-coated light-emitting diodes
Positive pole 201 and the negative pole 202 of one-dimension array 200 of another adjacent crystal-coated light-emitting diodes be positioned at same
Side, and be connected with each other through sheet metal 207.In other words, the light-emitting diode assembly 400 according to the present invention is one
Plant and the one-dimension array 200 of multiple crystal-coated light-emitting diodes arranged in parallel is connected in series and has large-area
Light-emitting diode assembly.
It is noted that only pipe shows the crystal-coated light-emitting diodes in the light-emitting diode assembly of Fig. 6 and Fig. 7
The quantity of one-dimension array 200 be respectively three, but its quantity is in fact not limited thereto, but can be according to making
The increase in demand used or design or minimizing.Although additionally, at the light-emitting diodes being connected in series shown by Fig. 7
In pipe device, due to three crystal-coated light-emitting diodes one-dimension array 200 for substantially in arranged in parallel and make send out
Optical diode device 400 presents rectangular shape, but it practice, the one-dimension array of crystal-coated light-emitting diodes
200 not necessarily to arrange in the way of this is parallel, its also can, such as, arrange the most in order
And link together, to form the another kind of light-emitting diode assembly presenting elongate in shape.
The presently preferred embodiments of the present invention that is merely to illustrate described above, but, within the spirit of the present invention, know
Those skilled in the art scholar will be it is contemplated that various other changes and modifications, and this changing and modifications also is wrapped
It is contained in scope of the invention.
Claims (10)
1. a crystal-coated light-emitting diodes, including:
First sheet metal；
Between second sheet metal, and this first sheet metal, there is a gap；
Grafting material, this grafting material is injected in this gap between this first sheet metal and this second sheet metal
And solidify, to be bonded together with this second sheet metal by this first sheet metal, and this grafting material of solidification has
One end face, this end face flushes with the end face of this second sheet metal with this first sheet metal；And
Light-emitting diode chip for backlight unit, its through solder respectively with this end face of this first sheet metal and this second sheet metal
This end face engages, and this light-emitting diode chip for backlight unit has on a positive pole and a negative pole, this positive pole and this first sheet metal
Circuit pattern electrically connects, and this negative pole system electrically connects with the circuit pattern on this second sheet metal.
2. crystal-coated light-emitting diodes as claimed in claim 1, it is characterised in that this grafting material is asphalt mixtures modified by epoxy resin
Fat.
3. crystal-coated light-emitting diodes as claimed in claim 1, it is characterised in that this first sheet metal with this
Two sheet metals also have the bottom surface relative to this end face, and each tool of this first sheet metal and this second sheet metal
There is the outward extending radiator structure from this bottom surface.
4. an one-dimension array for crystal-coated light-emitting diodes, it includes multiple arbitrary such as claims 1 to 3
Crystal-coated light-emitting diodes, the plurality of crystal-coated light-emitting diodes arranges in the way of one-dimension array, and any one covers
This first sheet metal system of brilliant formula light emitting diode and this second gold medal of another adjacent crystal-coated light-emitting diodes
Belong to sheet to connect.
5. a light-emitting diode assembly, it includes the one-dimensional of multiple crystal-coated light-emitting diodes as claimed in claim 4
Array, wherein, the positive pole of the one-dimension array of these crystal-coated light-emitting diodes is positioned at the one of this light-emitting diode assembly
Side and being connected with each other through cathode metal sheet, and the negative pole system of the one-dimension array of these crystal-coated light-emitting diodes is positioned at
The opposite side of this light-emitting diode assembly and being connected with each other through negative metal sheet.
6. a light-emitting diode assembly, it includes the one-dimensional of multiple crystal-coated light-emitting diodes as claimed in claim 4
Array, wherein, the positive polar system of the one-dimension array of any one crystal-coated light-emitting diodes is connected to another through sheet metal
The negative pole of the one-dimension array of individual crystal-coated light-emitting diodes.
7. the method manufacturing crystal-coated light-emitting diodes, the method includes:
Multiple long-bar metal sheets of spaced-apart relation, wantonly two in these long-bar metal sheets on short side direction are provided
Between individual neighboring strips sheet metal, there is a gap；
Be injected into by grafting material respectively between any two neighboring strips sheet metals in these long-bar metal sheets should
In gap；
Solidify this grafting material with by these long-bar metal chip bondings together；
Circuit pattern is printed onto the predetermined position on these engaged long-bar metal sheets；
Thering is provided multiple light-emitting diode chip for backlight unit, each light-emitting diode chip for backlight unit is fixed on engaged this through solder
On the end face of any two neighboring strips sheet metals of a little long-bar metal sheets, wherein, each light-emitting diode chip for backlight unit is just
Pole electrically connects with the corresponding circuit pattern on these two neighboring strips sheet metals respectively with negative pole；And
Along the short side direction of these long-bar metal sheets, these long-bar metal sheets that cutting is engaged.
8. the method manufacturing crystal-coated light-emitting diodes as claimed in claim 7, it is characterised in that this joint material
Material is epoxy resin.
9. the method manufacturing crystal-coated light-emitting diodes as claimed in claim 7, it is characterised in that each strip
Sheet metal has the bottom surface relative to this end face, and each long-bar metal sheet has the outward extending heat radiation from this bottom surface
Structure.
10. the as claimed in claim 7 method manufacturing crystal-coated light-emitting diodes, it is characterised in that should
Grafting material is injected into the mistake in this gap between any two neighboring strips sheet metals in these long-bar metal sheets
Cheng Zhong, the amount of this grafting material is controlled so as to make it correspond roughly to the volume in this gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510085454.8A CN105990494A (en) | 2015-02-17 | 2015-02-17 | Flip-chip type light emitting diode and fabrication method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510085454.8A CN105990494A (en) | 2015-02-17 | 2015-02-17 | Flip-chip type light emitting diode and fabrication method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105990494A true CN105990494A (en) | 2016-10-05 |
Family
ID=57038855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510085454.8A Pending CN105990494A (en) | 2015-02-17 | 2015-02-17 | Flip-chip type light emitting diode and fabrication method thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN105990494A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006086172A (en) * | 2004-09-14 | 2006-03-30 | Seiko Epson Corp | Light source device, its cooling method and image display device |
| US20070126016A1 (en) * | 2005-05-12 | 2007-06-07 | Epistar Corporation | Light emitting device and manufacture method thereof |
| CN102522478A (en) * | 2011-12-23 | 2012-06-27 | 深圳市瑞丰光电子股份有限公司 | Light-emitting diode module and support thereof |
-
2015
- 2015-02-17 CN CN201510085454.8A patent/CN105990494A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006086172A (en) * | 2004-09-14 | 2006-03-30 | Seiko Epson Corp | Light source device, its cooling method and image display device |
| US20070126016A1 (en) * | 2005-05-12 | 2007-06-07 | Epistar Corporation | Light emitting device and manufacture method thereof |
| CN102522478A (en) * | 2011-12-23 | 2012-06-27 | 深圳市瑞丰光电子股份有限公司 | Light-emitting diode module and support thereof |
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Application publication date: 20161005 |