CN105957853B - 一种整流桥焊装结构及其制作工艺 - Google Patents
一种整流桥焊装结构及其制作工艺 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13139—Silver [Ag] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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Abstract
本发明公开了一种整流桥焊装结构及其制作工艺,整流桥焊装结构包括料片、跳线和晶粒,所述晶粒通过焊膏固定在料片上,所述跳线的一端连接在晶粒的P面上,跳线的另一端连接在料片上。本发明的有益效果:改变传统的双料片制程,采用单料片和跳线焊接,可缩短生产周期,利用单料片生产降低料片成本。
Description
技术领域
本发明涉及电子配件技术领域,尤其涉及一种整流桥焊装结构及其制作工艺。
背景技术
目前,整流桥制作结构均采用双料片焊接工艺,其工艺流程为:1、先取上、下料片各一片摆放在焊接板上;2、在焊接板料片的需要焊接的位置点上锡膏;3、将晶粒用吸笔吸附,放置在料片已点锡膏的位置上;4、将上料片取出180翻转覆盖在下料片上;5、将已完成组装的材料进高温焊接炉焊接;6、将已完成焊接的材料塑料成型;采用此工艺生产出来的结构成本高、生产周期长。
发明内容
本发明的目的是提供一种整流桥焊装结构及其制作工艺,以克服目前现有技术中的不足。
为实现上述技术目的,本发明的技术方案是这样实现的:
一种整流桥焊装结构,包括料片、跳线和晶粒,所述晶粒通过焊膏固定在料片上,所述跳线的一端连接在晶粒的P面上,跳线的另一端连接在料片上。
进一步的,所述跳线为金线或铝线。
进一步的,所述晶粒为蓝膜晶粒。
进一步的,所述焊膏为银膏。
一种整流桥焊装结构的制作工艺,包括如下步骤:
S1、装料片:自动装框架机将料片装入料片盘,并传送到固定位置;
S2、点焊膏:点膏机将焊膏点在料片上的指定位置;
S3、装晶粒:固晶机将晶粒从蓝膜中取出,放置在料片有焊膏的上面,晶粒的P面朝上;
S4、固晶:送入固晶加热炉,焊膏熔化,晶粒即固定在料片的指定位置;
S5、打线:打线机将四条跳线的两端分别打在晶粒的P面和料片上,完成焊接;
S6、塑封:完成焊接的料片送模压机塑封;
S7、固化:将已塑封的料片送烤箱固化;
S8、冲胶:在冲胶机上将料片上的残胶冲净;
S9、电镀:将料片的引脚镀锡;
S10、切粒成型:将已电镀的料片切粒成型,得到制作完成的整流桥结构。
进一步的,整流桥焊装结构制作工艺进一步包括:
S11、TMTT:将已切粒成型的材料送TMTT测试电性、打印、包装;
S12、外检:将已测试、打印、包装的材料进行外观检验;
S13、出产检验:将已外观检验的材料抽检;
S14、出货:将出产检验检验合格的成品装箱入库出货。
进一步的,在步骤S5中,所述跳线为过1A电流的金线或铝线。
本发明的有益效果:改变传统的双料片制程,采用单料片和跳线焊接,可缩短生产周期,利用单料片生产降低料片成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其它的附图。
图1是根据本发明实施例所述的整流桥焊装结构的结构示意图;
图2是根据本发明实施例所述的料片的整体结构示意图。
图中:
1、料片;2、跳线;3、晶粒。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员所获得的所有其它实施例,都属于本发明保护的范围。
如图1-2所示,根据本发明实施例所述的一种整流桥焊装结构,包括料片1、跳线2和晶粒3,所述晶粒3通过焊膏固定在料片1上,所述跳线2的一端连接在晶粒3的P面上,跳线2的另一端连接在料片1上。
在一个具体的实施例中,所述跳线2为金线或铝线。
在一个具体的实施例中,所述晶粒3为蓝膜晶粒。
在一个具体的实施例中,所述焊膏为银膏。
本发明还提供了上述结构的制作工艺,具体包括如下步骤:
S1、装料片:自动装框架机将料片1装入料片盘,并传送到固定位置;
S2、点焊膏:点膏机将焊膏点在料片1上的指定位置;
S3、装晶粒:固晶机将晶粒3从蓝膜中取出,放置在料片1有焊膏的上面,晶粒3的P面朝上;
S4、固晶:送入固晶加热炉,焊膏熔化,晶粒3即固定在料片1的指定位置;
S5、打线:打线机将四条跳线2的两端分别打在晶粒3的P面和料片1上,完成焊接;
S6、塑封:完成焊接的料片送模压机塑封;
S7、固化:将已塑封的料片送烤箱固化;
S8、冲胶:在冲胶机上将料片上的残胶冲净;
S9、电镀:将料片的引脚镀锡;
S10、切粒成型:将已电镀的料片切粒成型,得到制作完成的整流桥结构;
S11、TMTT(一贯机):将已切粒成型的材料送TMTT(一贯机)测试电性、打印、包装;
S12、外检:将已测试、打印、包装的材料进行外观检验;
S13、出产检验:将已外观检验的材料抽检;
S14、出货:将出产检验检验合格的成品装箱入库出货。
在步骤S5中,所述跳线2为能过1A电流的金线或铝线。
本发明单料片焊接结构,相比于两片式焊接结构的具有如下优点:
1、再减少1个料片(铜材)的成本,由4条矮小焊线代替上料片,4条焊线的成本远低于一个上料片的成本;
2、采用固晶机直接从蓝膜上直接取晶粒避免晶粒在晶粒吸盘摇动的过程中产生碰撞引起损伤,提高产品的电性功能保证性;
3、与两片式焊接相比,单片式焊接固晶机将晶粒装填后,晶粒摆放的精准,避免了两片式组装将上料翻转覆盖在下料上的时晶粒产生移动、产生偏位,出现成品电性不稳的现象;
4、与两片焊接相比,单片式焊接避免上、下料片固定精度不准而引起的上、下料片错位现象;
5、与两片式焊接相比,单片焊接的中心部位,减少一个料片厚度,塑料本体的厚度在两片焊接的本体基上仍可减小,更省黑胶的消耗,其内部晶粒道电使用时散热的效果更可提高;
6、单片式焊接免去摇晶粒,覆盖上料片,进烧结炉高温焊接,降低电能的消耗和氮气消耗的人工成本。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (3)
1.一种整流桥焊装结构的制作工艺,其特征在于:包括如下步骤:
S1、装料片:自动装框架机将料片装入料片盘,并传送到固定位置;
S2、点焊膏:点膏机将焊膏点在料片上的指定位置;
S3、装晶粒:固晶机将晶粒从蓝膜中取出,放置在料片有焊膏的上面,晶粒的P面朝上;
S4、固晶:送入固晶加热炉,焊膏熔化,晶粒即固定在料片的指定位置;
S5、打线:打线机将四条跳线的两端分别打在晶粒的P面和料片上,完成焊接;
S6、塑封:完成焊接的料片送模压机塑封;
S7、固化:将已塑封的料片送烤箱固化;
S8、冲胶:在冲胶机上将料片上的残胶冲净;
S9、电镀:将料片的引脚镀锡;
S10、切粒成型:将已电镀的料片切粒成型,得到制作完成的整流桥结构。
2.根据权利要求1所述的整流桥焊装结构的制作工艺,其特征在于:进一步包括:
S11、TMTT:将已切粒成型的材料送TMTT测试电性、打印、包装;
S12、外检:将已测试、打印、包装的材料进行外观检验;
S13、出产检验:将已外观检验的材料抽检;
S14、出货:将出产检验检验合格的成品装箱入库出货。
3.根据权利要求2所述的整流桥焊装结构的制作工艺,其特征在于:在步骤S5中,所述跳线为过1A电流的金线或铝线。
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CN102157480A (zh) * | 2011-01-30 | 2011-08-17 | 常州银河世纪微电子有限公司 | 桥式整流器 |
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