CN105826458A - 一种带金属围坝的dpc陶瓷基板制备方法 - Google Patents
一种带金属围坝的dpc陶瓷基板制备方法 Download PDFInfo
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- CN105826458A CN105826458A CN201610262791.4A CN201610262791A CN105826458A CN 105826458 A CN105826458 A CN 105826458A CN 201610262791 A CN201610262791 A CN 201610262791A CN 105826458 A CN105826458 A CN 105826458A
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- ceramic substrate
- weld layer
- copper plate
- layer
- box dam
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- 239000000919 ceramic Substances 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 239000002184 metal Substances 0.000 title claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 10
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 239000000047 product Substances 0.000 claims abstract description 9
- 229910000679 solder Inorganic materials 0.000 claims abstract description 9
- 239000011265 semifinished product Substances 0.000 claims abstract description 8
- 239000000843 powder Substances 0.000 claims abstract description 7
- 238000005476 soldering Methods 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 229910052756 noble gas Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 10
- 238000003466 welding Methods 0.000 abstract description 7
- 238000002844 melting Methods 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 238000010923 batch production Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Casings For Electric Apparatus (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610262791.4A CN105826458B (zh) | 2016-04-26 | 2016-04-26 | 一种带金属围坝的dpc陶瓷基板制备方法 |
Applications Claiming Priority (1)
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CN201610262791.4A CN105826458B (zh) | 2016-04-26 | 2016-04-26 | 一种带金属围坝的dpc陶瓷基板制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN105826458A true CN105826458A (zh) | 2016-08-03 |
CN105826458B CN105826458B (zh) | 2018-02-16 |
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CN201610262791.4A Active CN105826458B (zh) | 2016-04-26 | 2016-04-26 | 一种带金属围坝的dpc陶瓷基板制备方法 |
Country Status (1)
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CN (1) | CN105826458B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107863436A (zh) * | 2017-10-13 | 2018-03-30 | 武汉利之达科技股份有限公司 | 一种含金属腔体的三维陶瓷基板及其制备方法 |
WO2018102998A1 (zh) * | 2016-12-07 | 2018-06-14 | 东莞市国瓷新材料科技有限公司 | 一种带镀铜围坝的陶瓷封装基板制备方法 |
CN111182728A (zh) * | 2020-01-22 | 2020-05-19 | 惠州中京电子科技有限公司 | 一种铝围坝金属基板印制电路板的制作方法 |
CN111613710A (zh) * | 2020-06-29 | 2020-09-01 | 松山湖材料实验室 | 一种电子设备、半导体器件、封装结构、支架及其制作方法 |
CN111792942A (zh) * | 2020-05-14 | 2020-10-20 | 山西华微紫外半导体科技有限公司 | 氮化铝陶瓷基板上围坝的烧结焊接方法 |
CN111792941A (zh) * | 2020-05-14 | 2020-10-20 | 山西华微紫外半导体科技有限公司 | 氮化硅陶瓷基板上围坝的烧结焊接方法 |
CN111908952A (zh) * | 2020-05-14 | 2020-11-10 | 山西华微紫外半导体科技有限公司 | 氧化铝陶瓷基板上围坝的烧结焊接方法 |
CN112289753A (zh) * | 2019-07-25 | 2021-01-29 | 松山湖材料实验室 | 用于紫外led封装的围坝陶瓷基板制作方法及其制品 |
CN112670250A (zh) * | 2020-12-25 | 2021-04-16 | 广东先导稀材股份有限公司 | 红外探测器模组的制造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111162154B (zh) * | 2020-03-05 | 2020-12-04 | 华引芯(武汉)科技有限公司 | 紫外发光元件及全无机封装方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201307606Y (zh) * | 2008-12-10 | 2009-09-09 | 潮州三环(集团)股份有限公司 | 一种新型陶瓷封装基座 |
CN101267011B (zh) * | 2007-03-13 | 2010-09-08 | 夏普株式会社 | 半导体发光装置、半导体发光装置用多引线框架 |
US20110278617A1 (en) * | 2010-05-12 | 2011-11-17 | Lee Gun Kyo | Light emitting device package |
CN203225276U (zh) * | 2013-02-01 | 2013-10-02 | 河北星火灯饰股份有限公司 | Led集成光源模块 |
-
2016
- 2016-04-26 CN CN201610262791.4A patent/CN105826458B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101267011B (zh) * | 2007-03-13 | 2010-09-08 | 夏普株式会社 | 半导体发光装置、半导体发光装置用多引线框架 |
CN201307606Y (zh) * | 2008-12-10 | 2009-09-09 | 潮州三环(集团)股份有限公司 | 一种新型陶瓷封装基座 |
US20110278617A1 (en) * | 2010-05-12 | 2011-11-17 | Lee Gun Kyo | Light emitting device package |
CN203225276U (zh) * | 2013-02-01 | 2013-10-02 | 河北星火灯饰股份有限公司 | Led集成光源模块 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018102998A1 (zh) * | 2016-12-07 | 2018-06-14 | 东莞市国瓷新材料科技有限公司 | 一种带镀铜围坝的陶瓷封装基板制备方法 |
CN107863436A (zh) * | 2017-10-13 | 2018-03-30 | 武汉利之达科技股份有限公司 | 一种含金属腔体的三维陶瓷基板及其制备方法 |
CN112289753A (zh) * | 2019-07-25 | 2021-01-29 | 松山湖材料实验室 | 用于紫外led封装的围坝陶瓷基板制作方法及其制品 |
CN112289753B (zh) * | 2019-07-25 | 2023-12-22 | 松山湖材料实验室 | 用于紫外led封装的围坝陶瓷基板制作方法及其制品 |
CN111182728A (zh) * | 2020-01-22 | 2020-05-19 | 惠州中京电子科技有限公司 | 一种铝围坝金属基板印制电路板的制作方法 |
CN111792942A (zh) * | 2020-05-14 | 2020-10-20 | 山西华微紫外半导体科技有限公司 | 氮化铝陶瓷基板上围坝的烧结焊接方法 |
CN111792941A (zh) * | 2020-05-14 | 2020-10-20 | 山西华微紫外半导体科技有限公司 | 氮化硅陶瓷基板上围坝的烧结焊接方法 |
CN111908952A (zh) * | 2020-05-14 | 2020-11-10 | 山西华微紫外半导体科技有限公司 | 氧化铝陶瓷基板上围坝的烧结焊接方法 |
CN111613710A (zh) * | 2020-06-29 | 2020-09-01 | 松山湖材料实验室 | 一种电子设备、半导体器件、封装结构、支架及其制作方法 |
CN112670250A (zh) * | 2020-12-25 | 2021-04-16 | 广东先导稀材股份有限公司 | 红外探测器模组的制造方法 |
CN112670250B (zh) * | 2020-12-25 | 2022-04-08 | 东莞先导先进科技有限公司 | 红外探测器模组的制造方法 |
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CN105826458B (zh) | 2018-02-16 |
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Effective date of registration: 20200916 Address after: 710000 unit 1707, building 1, Wanke hi tech living Plaza, No.56 Xifeng Road, Yanta District, Xi'an, Shaanxi Province Patentee after: Xi'an Boxin Chuangda Electronic Technology Co.,Ltd. Address before: 523000 No. 12, ancient Liao Road, Tangxia Town, Dongguan, Guangdong Patentee before: DONGGUAN CHINA ADVANCED CERAMIC TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20240429 Address after: 321000 No. 828 Jinshi Road, Jiangdong Town, Jindong District, Jinhua City, Zhejiang Province (self declared) Patentee after: Jinhua Xinci Technology Co.,Ltd. Country or region after: China Address before: Unit 1707, unit 1, building 1, Vanke hi tech living Plaza, 56 Xifeng Road, Yanta District, Xi'an City, Shaanxi Province, 710000 Patentee before: Xi'an Boxin Chuangda Electronic Technology Co.,Ltd. Country or region before: China |
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