CN105914259A - Fast cleaning and texturing process for diamond wire cut mono-crystalline silicon pieces - Google Patents
Fast cleaning and texturing process for diamond wire cut mono-crystalline silicon pieces Download PDFInfo
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- CN105914259A CN105914259A CN201610375827.XA CN201610375827A CN105914259A CN 105914259 A CN105914259 A CN 105914259A CN 201610375827 A CN201610375827 A CN 201610375827A CN 105914259 A CN105914259 A CN 105914259A
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- silicon chip
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- making herbs
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- 238000004140 cleaning Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 16
- 239000010432 diamond Substances 0.000 title claims abstract description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 73
- 239000010703 silicon Substances 0.000 claims abstract description 73
- 238000005406 washing Methods 0.000 claims abstract description 15
- 238000005554 pickling Methods 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical class [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 30
- 210000002268 wool Anatomy 0.000 claims description 30
- 235000008216 herbs Nutrition 0.000 claims description 25
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 18
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 10
- 239000000654 additive Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000003643 water by type Substances 0.000 claims description 9
- 235000021110 pickles Nutrition 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 241000628997 Flos Species 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 4
- 206010025421 Macule Diseases 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a fast cleaning and texturing process for diamond wire cut mono-crystalline silicon pieces, which is characterized by comprising the following steps: (1) pre-cleaning solution preparation; (2) silicon piece pre-cleaning; (3) texturing solution preparation; (4) silicon piece texturing; (5) pickling solution preparation; (6) silicon piece pickling; and (7) silicon piece washing. Trails prove that by using the process technology of the invention, a good cleaning and texturing effect can be achieved for 8.2-inch diamond wire cut mono-crystalline silicon pieces, and the yield of cells and the cell appearance are improved. Moreover, a lot of waste of chemicals and silicon pieces is avoided, and the efficiency and yield of cells are improved effectively.
Description
Technical field
The present invention relates to a kind of diamond wire cutting monocrystalline silicon piece Rapid Cleaning process for etching.
Background technology
Existing 8.2 cun of silicon single crystal rods are after cutting through diamond wire, and silicon chip surface can produce damage layer
And residual cutting liquid, in the inspection of follow-up silicon chip, packaging, transportation, can be by finger-marks, dust
Being retained in silicon chip surface Deng impurity, the problems referred to above can occur greatly in the production process of solar battery sheet
Dirty of the greasy dirt of amount, white macula, finger-marks etc., have a strong impact on cell piece outward appearance and conversion efficiency.Mesh
When using cleaning and texturing in front conventional cleaning and texturing technique, silicon chip surface is entered by preparation sodium hydroxide solution
Row cleaning and texturing, but for 8.2 cun of diamond wire cutting monocrystalline silicon pieces, this process program cannot be complete
That all clear washes the greasy dirt of silicon chip surface, white macula, impression of the hand etc. off is dirty, thus causes silicon chip, chemicals
Waste, and due to cleaning and texturing overlong time, have a strong impact on production capacity.
Summary of the invention
It is an object of the invention to provide a kind of diamond wire cutting monocrystalline silicon piece Rapid Cleaning process for etching, energy
Enough obtain good cleaning and texturing effect, thus improve the qualification rate of cell piece, and reducing
Product usage amount.
A kind of diamond wire cuts monocrystalline silicon piece Rapid Cleaning process for etching, and it is particular in that, including
Following steps:
(1) prerinse dosing: prepare hydrogen peroxide solution with the precleaning spout of etching solar cells equipment,
In precleaning spout, specifically inject 120 liters of deionized waters, add the dioxygen of 8 mass per liter concentration 30%
Water, stirs after adding 250 grams of solid sodium hydroxides；
(2) silicon chip prerinse: silicon chip is put into precleaning spout, makes silicon chip be totally submerged in the solution,
Control pre-cleaning temperature 60 DEG C～63 DEG C, prerinse time 320～350 seconds, and often clean 1000
The hydrogen peroxide of 2 mass per liter concentration 30% is added after silicon chip；
(3) making herbs into wool dosing: molten with the texturing slot preparation sodium hydroxide making herbs into wool of etching solar cells equipment
Liquid, specifically injects 120 liters of deionized waters in texturing slot, adds 3500 grams of solid sodium hydroxides,
Add 1.5 liters of flocking additives, stir；
(4) silicon wafer wool making: put into step (3) by after the silicon chip extracting after step (2) prerinse
The making herbs into wool solution of preparation, makes silicon chip be totally submerged in the solution, control solution temperature 82～85 DEG C, system
Add after floss time 1150～1200 seconds, and every 200 silicon chips of making herbs into wool 250 grams of solid sodium hydroxides,
70 milliliters of flocking additives；
(5) pickling dosing: use the descaling bath preparating acid washing liquid of etching solar cells equipment, specifically
Injecting 120 liters of deionized waters in descaling bath, adding 16 mass per liter concentration is the Fluohydric acid. of 47%；
(6) silicon chip pickling: by putting into pickle after the silicon chip extracting of step (4) making herbs into wool, make
Silicon chip is totally submerged in the solution, controls time 180～200 seconds, pickle temperature 25 DEG C～28 DEG C；
(7) silicon chip washing: will be clear with deionized water after the silicon chip extracting after step (6) pickling
Wash, control washing time 180～200 seconds.
Step (3) uses TS45 flocking additive.
Test proves that, after using the Technology of the present invention, 8.2 cun of diamond wire cuttings can be made
Monocrystalline silicon piece obtains good cleaning and texturing effect, thus improves yield rate and the battery of cell piece
Sheet outward appearance.Avoid a large amount of wastes of chemicals and silicon chip.And be effectively improved cell piece efficiency and
Cell piece yield rate.
Accompanying drawing explanation
Accompanying drawing 1 is silicon chip surface state diagram before and after using embodiment 1 method to clean, and in figure, left side is clear
Washing front surface and have greasy dirt state, right side is state after cleaning；
Accompanying drawing 2 is silicon chip surface state diagram before and after using embodiment 1 method to clean, and in figure, left side is clear
Washing front surface and have albomaculatus status, right side is state after cleaning；
Accompanying drawing 3 is silicon chip surface state diagram before and after using embodiment 1 method to clean, and in figure, left side is clear
Washing front surface and have impression of the hand state, right side is state after cleaning；
Accompanying drawing 4 is silicon chip surface state diagram before and after using embodiment 1 method to clean, and in figure, left side is clear
Washing front surface and have dust, Oil stain mixture state, right side is state after cleaning.
Detailed description of the invention
The technical scheme is that the Rapid Cleaning making herbs into wool problem for solving diamond wire monocrystalline silicon piece, for
This provides a kind of silicon chip cleaning and texturing technique.Comprise the steps: silicon chip prerinse step；Enter
Row making herbs into wool step；Carry out acid pickling step；Carry out rinse step.
Below as a example by 8.2 cun of silicon wafer cut by diamond wire cleaning and texturings:
A kind of silicon chip cleaning and texturing technique, described prerinse step includes preparing hydrogen peroxide prerinse liquid
And silicon chip is put into cleaning in prerinse liquid.Preparation prerinse liquid includes injecting 120 to precleaning spout
Rise deionized water, add the hydrogen peroxide of 8 mass per liter concentration 30%, add 250 grams of solid sodium hydroxides.
Silicon chip prerinse step includes putting into silicon chip in cleanout fluid 320～350 seconds, arranges precleaning spout temperature
60 DEG C～63 DEG C, often clean 1000 silicon chips and add the hydrogen peroxide of 2 mass per liter concentration 30%.
Described making herbs into wool step includes preparing sodium hydroxide making herbs into wool solution and the silicon after prerinse
Sheet is put into and is carried out making herbs into wool step in making herbs into wool solution.Preparation making herbs into wool solution includes injecting 120 liters to texturing slot
Deionized water, adds 3500 grams of sodium hydroxide, adds 1.5 liters of Changzhou ShiChuang Energy Technology Co., Ltd.
Model TS45 flocking additive.Silicon wafer wool making step includes putting into making herbs into wool through prerinse silicon chip molten
Liquid, arranges time 1150～1200 seconds, temperature 82 DEG C～85 DEG C, adds 250 grams of solids for every 200
Sodium hydroxide, 70 milliliters of aforesaid TS45 flocking additives.
Described acid cleaning process includes preparating acid dilution and the silicon chip after making herbs into wool is put in solution
The step of row pickling.Preparating acid dilution includes injecting 120 liters of deionized waters to descaling bath, adds 16
Mass per liter concentration is the Fluohydric acid. of 47%.Silicon chip after acid pickling step includes making herbs into wool is put in pickle,
Time 180～200 seconds, temperature 25 DEG C～28 DEG C are set.
Silicon chip after described washing process includes pickling puts into rinsing bowl, arranges the rinsing bowl time
180～200 seconds, inject deionized water, injection flow 60 liters/min is set.
Above-mentioned technique can make silicon chip obtain good textured structure, and sunlight reflection is greatly reduced,
Promote solar cell piece efficiency.
Embodiment 1:
(1) prerinse dosing: with China Electronics science and technology group the 45th etching solar cells
Equipment precleaning spout preparation hydrogen peroxide pre-cleaning solution.Equipment precleaning spout injects 120 liters of deionized waters,
Add the hydrogen peroxide of 8 mass per liter concentration 30%, stir after adding 250 grams of solid sodium hydroxides；
(2) silicon chip prerinse: silicon chip is put into equipment precleaning spout, makes silicon chip be completely submerged in molten
In liquid, pre-cleaning temperature 60 DEG C, 320 seconds silicon chip prerinse time are set, often clean 1000 silicon
After sheet, solution adds the hydrogen peroxide of 2 mass per liter concentration 30%；
(3) making herbs into wool dosing: prepare sodium hydroxide making herbs into wool solution with equipment texturing slot.Texturing slot injects
120 liters of deionized waters, add 3500 grams of solid sodium hydroxides, add 1.5 liters of Changzhou Shi Chuan Energy Section
Skill company limited model TS45 flocking additive；
(4) silicon wafer wool making: the silicon chip after prerinse is put into making herbs into wool solution, makes silicon chip complete
Submergence in the solution, arranges solution temperature 82 DEG C, 1150 seconds silicon wafer wool making time；
(5) pickling dosing: by equipment descaling bath preparating acid washing liquid.Descaling bath inject 120 liters go from
Sub-water, adding 16 mass per liter concentration is the Fluohydric acid. of 47%；
(6) silicon chip pickling: the silicon chip through making herbs into wool is put into pickle, makes silicon chip be completely submerged in
In solution, it is set 180 seconds the time, pickle temperature 25 DEG C；
(7) silicon chip washing: by the silicon chip extracting after overpickling, the equipment rinsing bowl of putting into spend from
Sub-water cleans, and arranges washing time 180 seconds, arranges injection flow 60 liters/min.
Table 1:
In upper table 1,007S technique represents the general technology of diamond wire cutting cleaning monocrystalline silicon making herbs into wool,
007T technique represents technique used by the embodiment of the present invention 1, from above-mentioned table 1, through present invention process
After cleaning and texturing, yield rate adds 9.1%, and cell piece improved efficiency 0.08%, the time reduces
300s。
As Fig. 1,2,3 and the 4 silicon chip surface typical case's stain type that is silicon rod after diamond wire cuts and with
Correspondence silicon chip after the embodiment of the present invention 1 method cleaning and texturing contrast, it can be seen that the present invention
Technique has notable cleaning action to above-mentioned silicon chip is dirty.
Claims (2)
1. a diamond wire cutting monocrystalline silicon piece Rapid Cleaning process for etching, it is characterised in that include
Following steps:
(1) prerinse dosing: prepare hydrogen peroxide solution with the precleaning spout of etching solar cells equipment,
In precleaning spout, specifically inject 120 liters of deionized waters, add the dioxygen of 8 mass per liter concentration 30%
Water, stirs after adding 250 grams of solid sodium hydroxides；
(2) silicon chip prerinse: silicon chip is put into precleaning spout, makes silicon chip be totally submerged in the solution,
Control pre-cleaning temperature 60 DEG C～63 DEG C, prerinse time 320～350 seconds, and often clean 1000
The hydrogen peroxide of 2 mass per liter concentration 30% is added after silicon chip；
(3) making herbs into wool dosing: molten with the texturing slot preparation sodium hydroxide making herbs into wool of etching solar cells equipment
Liquid, specifically injects 120 liters of deionized waters in texturing slot, adds 3500 grams of solid sodium hydroxides,
Add 1.5 liters of flocking additives, stir；
(4) silicon wafer wool making: put into step (3) by after the silicon chip extracting after step (2) prerinse
The making herbs into wool solution of preparation, makes silicon chip be totally submerged in the solution, control solution temperature 82～85 DEG C, system
Add after floss time 1150～1200 seconds, and every 200 silicon chips of making herbs into wool 250 grams of solid sodium hydroxides,
70 milliliters of flocking additives；
(5) pickling dosing: use the descaling bath preparating acid washing liquid of etching solar cells equipment, specifically
Injecting 120 liters of deionized waters in descaling bath, adding 16 mass per liter concentration is the Fluohydric acid. of 47%；
(6) silicon chip pickling: by putting into pickle after the silicon chip extracting of step (4) making herbs into wool, make
Silicon chip is totally submerged in the solution, controls time 180～200 seconds, pickle temperature 25 DEG C～28 DEG C；
(7) silicon chip washing: will be clear with deionized water after the silicon chip extracting after step (6) pickling
Wash, control washing time 180～200 seconds.
2. diamond wire cutting monocrystalline silicon piece Rapid Cleaning process for etching as claimed in claim 1, its
It is characterised by: step (3) uses TS45 flocking additive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610375827.XA CN105914259B (en) | 2016-05-31 | 2016-05-31 | Buddha's warrior attendant wire cutting monocrystalline silicon piece Rapid Cleaning process for etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610375827.XA CN105914259B (en) | 2016-05-31 | 2016-05-31 | Buddha's warrior attendant wire cutting monocrystalline silicon piece Rapid Cleaning process for etching |
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| Publication Number | Publication Date |
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| CN105914259A true CN105914259A (en) | 2016-08-31 |
| CN105914259B CN105914259B (en) | 2017-12-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111554758A (en) * | 2020-04-24 | 2020-08-18 | 中威新能源(成都)有限公司 | Texturing pretreatment system and method suitable for different texturing additives |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104018229A (en) * | 2014-05-15 | 2014-09-03 | 宁夏银星能源股份有限公司 | Alcohol-free texturing process of monocrystalline silicon solar cell |
| CN104157735A (en) * | 2014-08-14 | 2014-11-19 | 山西潞安太阳能科技有限责任公司 | Solar cell texturing process |
| CN104630900A (en) * | 2013-11-14 | 2015-05-20 | 江苏天宇光伏科技有限公司 | Surface texturing processing method of monocrystalline silicon solar cell |
-
2016
- 2016-05-31 CN CN201610375827.XA patent/CN105914259B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104630900A (en) * | 2013-11-14 | 2015-05-20 | 江苏天宇光伏科技有限公司 | Surface texturing processing method of monocrystalline silicon solar cell |
| CN104018229A (en) * | 2014-05-15 | 2014-09-03 | 宁夏银星能源股份有限公司 | Alcohol-free texturing process of monocrystalline silicon solar cell |
| CN104157735A (en) * | 2014-08-14 | 2014-11-19 | 山西潞安太阳能科技有限责任公司 | Solar cell texturing process |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111554758A (en) * | 2020-04-24 | 2020-08-18 | 中威新能源(成都)有限公司 | Texturing pretreatment system and method suitable for different texturing additives |
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