CN105914259B - Buddha's warrior attendant wire cutting monocrystalline silicon piece Rapid Cleaning process for etching - Google Patents
Buddha's warrior attendant wire cutting monocrystalline silicon piece Rapid Cleaning process for etching Download PDFInfo
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- CN105914259B CN105914259B CN201610375827.XA CN201610375827A CN105914259B CN 105914259 B CN105914259 B CN 105914259B CN 201610375827 A CN201610375827 A CN 201610375827A CN 105914259 B CN105914259 B CN 105914259B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000005520 cutting process Methods 0.000 title claims abstract description 14
- 238000005530 etching Methods 0.000 title claims abstract description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 72
- 239000010703 silicon Substances 0.000 claims abstract description 72
- 210000002268 wool Anatomy 0.000 claims abstract description 32
- 235000008216 herbs Nutrition 0.000 claims abstract description 25
- 239000007788 liquid Substances 0.000 claims abstract description 17
- 238000005554 pickling Methods 0.000 claims abstract description 13
- 239000000243 solution Substances 0.000 claims description 29
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical class [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 26
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 17
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 14
- 239000003643 water by type Substances 0.000 claims description 12
- 235000021110 pickles Nutrition 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 239000002699 waste material Substances 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- -1 finger-marks Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of Buddha's warrior attendant wire cutting monocrystalline silicon piece Rapid Cleaning process for etching.It is characterized in, comprises the following steps：(1) liquid is matched somebody with somebody in prerinse；(2) silicon chip prerinse；(3) liquid is matched somebody with somebody in making herbs into wool；(4) silicon wafer wool making；(5) liquid is matched somebody with somebody in pickling；(6) silicon chip pickling；(7) silicon chip is washed.Test proves that after using technology of the invention, 8.2 cun of Buddha's warrior attendant wire cutting monocrystalline silicon pieces can be made to obtain good cleaning and texturing effect, so as to improve the yield rate of cell piece and cell piece outward appearance.Avoid a large amount of wastes of chemicals and silicon chip.And effectively improve cell piece efficiency and cell piece yield rate.
Description
Technical field
The present invention relates to a kind of Buddha's warrior attendant wire cutting monocrystalline silicon piece Rapid Cleaning process for etching.
Background technology
For existing 8.2 cun of silicon single crystal rods after Buddha's warrior attendant wire cutting, silicon chip surface can produce damaging layer and residual cutting
Liquid, examined, in packaging, transportation in follow-up silicon chip, the impurity such as finger-marks, dust can be retained in silicon chip surface, it is above-mentioned to ask
Dirty of substantial amounts of greasy dirt, hickie, finger-marks etc. can occur in the production process of solar battery sheet in topic, have a strong impact on battery
Piece outward appearance and conversion efficiency.Sodium hydroxide solution is prepared when cleaning and texturing is used in current conventional cleaning and texturing technique to silicon chip table
Face carries out cleaning and texturing, but can not wash silicon chip completely for 8.2 cun of Buddha's warrior attendant wire cutting monocrystalline silicon pieces, this process program
The greasy dirt on surface, hickie, impression of the hand etc. are dirty, so as to cause the waste of silicon chip, chemicals, and due to cleaning and texturing time mistake
It is long, have a strong impact on production capacity.
The content of the invention
It is an object of the invention to provide a kind of Buddha's warrior attendant wire cutting monocrystalline silicon piece Rapid Cleaning process for etching, can obtain good
Cleaning and texturing effect, so as to improve the qualification rate of cell piece, and reduce chemicals usage amount.
A kind of Buddha's warrior attendant wire cutting monocrystalline silicon piece Rapid Cleaning process for etching, it is particular in that, comprises the following steps：
(1) liquid is matched somebody with somebody in prerinse：Hydrogen peroxide solution is prepared with the precleaning spout of etching solar cells equipment, specifically pre- clear
120 liters of deionized waters are injected in washing trough, add the hydrogen peroxide of 8 mass per liter concentration 30%, are stirred after adding 250 grams of solid sodium hydroxides
Mix uniformly；
(2) silicon chip prerinse：Silicon chip is put into precleaning spout, silicon chip is totally submerged in the solution, controls prerinse temperature
60 DEG C~63 DEG C of degree, 320~350 seconds prerinse time, and add 2 mass per liter concentration 30% after often cleaning 1000 silicon chips
Hydrogen peroxide；
(3) liquid is matched somebody with somebody in making herbs into wool：Sodium hydroxide making herbs into wool solution is prepared with the texturing slot of etching solar cells equipment, is specifically being made
120 liters of deionized waters are injected in suede groove, add 3500 grams of solid sodium hydroxides, 1.5 liters of flocking additives is added, stirs；
(4) silicon wafer wool making：The making herbs into wool that step (3) preparation is put into after silicon chip extracting after step (2) prerinse is molten
Liquid, silicon chip is totally submerged in the solution, control 82~85 DEG C of solution temperature, 1150~1200 seconds making herbs into wool time, and often make
250 grams of solid sodium hydroxides, 70 milliliters of flocking additives are added after 200 silicon chips of suede；
(5) liquid is matched somebody with somebody in pickling：Pickle is prepared with the descaling bath of etching solar cells equipment, is specifically injected in descaling bath
120 liters of deionized waters, the hydrofluoric acid that 16 mass per liter concentration of addition are 47%；
(6) silicon chip pickling：Pickle will be put into after silicon chip extracting by step (4) making herbs into wool, be completely submerged in silicon chip
In solution, control time 180~200 seconds, 25 DEG C~28 DEG C of pickle temperature；
(7) silicon chip is washed：It will be cleaned after silicon chip extracting after step (6) pickling with deionized water, when control is washed
Between 180~200 seconds.
TS45 flocking additives are used in step (3).
It test proves that after using technology of the invention, can obtain 8.2 cun of Buddha's warrior attendant wire cutting monocrystalline silicon pieces
Good cleaning and texturing effect, so as to improve the yield rate of cell piece and cell piece outward appearance.Avoid chemicals and silicon chip
A large amount of wastes.And effectively improve cell piece efficiency and cell piece yield rate.
Brief description of the drawings
Accompanying drawing 1 is silicon chip surface state diagram before and after being cleaned using the method for embodiment 1, and there is oil in left side to clean preceding surface in figure
Dirty state, right side are state after cleaning；
Accompanying drawing 2 is silicon chip surface state diagram before and after being cleaned using the method for embodiment 1, in figure left side for clean preceding surface have it is white
Plaque-like state, right side are state after cleaning；
Accompanying drawing 3 is silicon chip surface state diagram before and after being cleaned using the method for embodiment 1, and there is hand in left side to clean preceding surface in figure
Print state, right side are state after cleaning；
Accompanying drawing 4 is silicon chip surface state diagram before and after being cleaned using the method for embodiment 1, and there is ash in left side to clean preceding surface in figure
Dirt, Oil stain mixture state, right side are state after cleaning.
Embodiment
The technical scheme is that to solve the problems, such as the Rapid Cleaning making herbs into wool of diamond wire monocrystalline silicon piece, one is provided for this
Kind silicon chip cleaning and texturing technique.Comprise the following steps：By silicon chip prerinse step；Carry out making herbs into wool step；Carry out acid pickling step；Enter
Row rinse step.
Below by taking 8.2 cun of silicon wafer cut by diamond wire cleaning and texturings as an example：
A kind of silicon chip cleaning and texturing technique, described prerinse step are included with producing hydrogen peroxide prerinse liquid and by silicon chip
It is put into prerinse liquid and cleans.Preparing prerinse liquid includes injecting 120 liters of deionized waters to precleaning spout, and 8 mass per liter of addition are dense
The hydrogen peroxide of degree 30%, add 250 grams of solid sodium hydroxides.Silicon chip prerinse step includes silicon chip being put into 320 in cleaning fluid
~350 seconds, precleaning spout temperature 60 C~63 DEG C were set, often clean the dioxygen that 1000 silicon chips add 2 mass per liter concentration 30%
Water.
Described making herbs into wool step includes preparing sodium hydroxide making herbs into wool solution and the silicon chip after prerinse is put into making herbs into wool
Making herbs into wool step is carried out in solution.Preparing making herbs into wool solution includes injecting 120 liters of deionized waters to texturing slot, adds 3500 grams of hydroxides
Sodium, add 1.5 liters of Changzhou ShiChuang Energy Technology Co., Ltd.'s model TS45 flocking additives.Silicon wafer wool making step includes passing through
Prerinse silicon chip is put into making herbs into wool solution, sets 1150~1200 seconds time, 82 DEG C~85 DEG C of temperature, every 200 are added 250 grams admittedly
Body sodium hydroxide, 70 milliliters of foregoing TS45 flocking additives.
Described acid cleaning process includes preparing Acidwash solution and the silicon chip after making herbs into wool is put into the step that pickling is carried out in solution
Suddenly.Preparing Acidwash solution includes injecting 120 liters of deionized waters, the hydrofluoric acid that 16 mass per liter concentration of addition are 47% to descaling bath.
Acid pickling step includes the silicon chip after making herbs into wool being put into pickle, sets 180~200 seconds time, 25 DEG C~28 DEG C of temperature.
The washing process includes the silicon chip after pickling being put into rinsing bowl, sets 180~200 seconds rinsing bowl time, note
Enter deionized water, 60 liters/min of flow of injection is set.
Above-mentioned technique can make silicon chip obtain good textured structure, and sunshine reflection, lifting sun electricity is greatly reduced
Pond piece efficiency.
Embodiment 1：
(1) liquid is matched somebody with somebody in prerinse：With science and technology group of China Electronics the 45th etching solar cells equipment precleaning spout
With producing hydrogen peroxide pre-cleaning solution.Equipment precleaning spout injects 120 liters of deionized waters, adds the dioxygen of 8 mass per liter concentration 30%
Water, stirred after adding 250 grams of solid sodium hydroxides；
(2) silicon chip prerinse：Silicon chip is put into equipment precleaning spout, silicon chip is totally submerged in the solution, is set pre- clear
Temperature 60 C is washed, 320 seconds silicon chip prerinse time, solution adds the double of 2 mass per liter concentration 30% after often cleaning 1000 silicon chips
Oxygen water；
(3) liquid is matched somebody with somebody in making herbs into wool：Sodium hydroxide making herbs into wool solution is prepared with equipment texturing slot.Texturing slot injects 120 liters of deionized waters,
3500 grams of solid sodium hydroxides are added, add 1.5 liters of Changzhou ShiChuang Energy Technology Co., Ltd.'s model TS45 flocking additives；
(4) silicon wafer wool making：Silicon chip after prerinse is put into making herbs into wool solution, silicon chip is totally submerged in the solution,
82 DEG C of solution temperature, 1150 seconds silicon wafer wool making time are set；
(5) liquid is matched somebody with somebody in pickling：Pickle is prepared with equipment descaling bath.Descaling bath injects 120 liters of deionized waters, adds 16 liters of matter
Measure the hydrofluoric acid that concentration is 47%；
(6) silicon chip pickling：Silicon chip Jing Guo making herbs into wool is put into pickle, silicon chip is totally submerged in the solution, during setting
Between 180 seconds, 25 DEG C of pickle temperature；
(7) silicon chip is washed：By the silicon chip extracting after overpickling, it is put into equipment rinsing bowl and is cleaned with deionized water, sets
Washing time 180 seconds, 60 liters/min of flow of injection is set.
Table 1：
In upper table 1,007S techniques represent the general technology of Buddha's warrior attendant wire cutting cleaning monocrystalline silicon making herbs into wool, and 007T techniques represent
Technique used in the embodiment of the present invention 1, from above-mentioned table 1, after present invention process cleaning and texturing, yield rate adds 9.1%,
Cell piece improved efficiency 0.08%, the time reduces 300s.
As Fig. 1,2,3 and 4 be silicon rod after Buddha's warrior attendant wire cutting silicon chip surface typical case stain type and it is corresponding through this
Silicon chip contrasts after the method cleaning and texturing of inventive embodiments 1, it can be seen that present invention process is dirty to above-mentioned silicon chip notable cleaning
Effect.
Claims (1)
1. a kind of Buddha's warrior attendant wire cutting monocrystalline silicon piece Rapid Cleaning process for etching, it is characterised in that comprise the following steps：
（1）Liquid is matched somebody with somebody in prerinse：Match somebody with somebody producing hydrogen peroxide pre-cleaning solution, equipment precleaning spout with etching solar cells equipment precleaning spout
120 liters of deionized waters are injected, add the hydrogen peroxide of 8 mass per liter concentration 30%, are stirred after adding 250 grams of solid sodium hydroxides；
（2）Silicon chip prerinse：Silicon chip is put into equipment precleaning spout, silicon chip is totally submerged in the solution, prerinse temperature is set
60 DEG C of degree, 320 seconds silicon chip prerinse time, often solution adds the hydrogen peroxide of 2 mass per liter concentration 30% after 1000 silicon chips of cleaning；
（3）Liquid is matched somebody with somebody in making herbs into wool：Sodium hydroxide making herbs into wool solution is prepared with equipment texturing slot, texturing slot injects 120 liters of deionized waters, addition
3500 grams of solid sodium hydroxides, add 1.5 liters of Changzhou ShiChuang Energy Technology Co., Ltd.'s model TS45 flocking additives；
（4）Silicon wafer wool making：Silicon chip after prerinse is put into making herbs into wool solution, silicon chip is totally submerged in the solution, sets
82 DEG C of solution temperature, 1150 seconds silicon wafer wool making time；
（5）Liquid is matched somebody with somebody in pickling：Pickle is prepared with equipment descaling bath, descaling bath injects 120 liters of deionized waters, and 16 mass per liter of addition are dense
Spend the hydrofluoric acid for 47%；
（6）Silicon chip pickling：Silicon chip Jing Guo making herbs into wool is put into pickle, silicon chip is totally submerged in the solution, the time 180 is set
Second, 25 DEG C of pickle temperature；
（7）Silicon chip is washed：By the silicon chip extracting after overpickling, it is put into equipment rinsing bowl and is cleaned with deionized water, washing is set
180 seconds time, 60 liters/min of flow of injection is set.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610375827.XA CN105914259B (en) | 2016-05-31 | 2016-05-31 | Buddha's warrior attendant wire cutting monocrystalline silicon piece Rapid Cleaning process for etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610375827.XA CN105914259B (en) | 2016-05-31 | 2016-05-31 | Buddha's warrior attendant wire cutting monocrystalline silicon piece Rapid Cleaning process for etching |
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| Publication Number | Publication Date |
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| CN105914259A CN105914259A (en) | 2016-08-31 |
| CN105914259B true CN105914259B (en) | 2017-12-15 |
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| CN111554758A (en) * | 2020-04-24 | 2020-08-18 | 中威新能源(成都)有限公司 | Texturing pretreatment system and method suitable for different texturing additives |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104018229A (en) * | 2014-05-15 | 2014-09-03 | 宁夏银星能源股份有限公司 | Alcohol-free texturing process of monocrystalline silicon solar cell |
| CN104157735A (en) * | 2014-08-14 | 2014-11-19 | 山西潞安太阳能科技有限责任公司 | Solar cell texturing process |
| CN104630900A (en) * | 2013-11-14 | 2015-05-20 | 江苏天宇光伏科技有限公司 | Surface texturing processing method of monocrystalline silicon solar cell |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104630900A (en) * | 2013-11-14 | 2015-05-20 | 江苏天宇光伏科技有限公司 | Surface texturing processing method of monocrystalline silicon solar cell |
| CN104018229A (en) * | 2014-05-15 | 2014-09-03 | 宁夏银星能源股份有限公司 | Alcohol-free texturing process of monocrystalline silicon solar cell |
| CN104157735A (en) * | 2014-08-14 | 2014-11-19 | 山西潞安太阳能科技有限责任公司 | Solar cell texturing process |
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