CN105908152A - 一种六方氮化硼薄膜的转移方法 - Google Patents
一种六方氮化硼薄膜的转移方法 Download PDFInfo
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- CN105908152A CN105908152A CN201610283359.3A CN201610283359A CN105908152A CN 105908152 A CN105908152 A CN 105908152A CN 201610283359 A CN201610283359 A CN 201610283359A CN 105908152 A CN105908152 A CN 105908152A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610283359.3A CN105908152B (zh) | 2016-04-29 | 2016-04-29 | 一种六方氮化硼薄膜的转移方法 |
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CN201610283359.3A CN105908152B (zh) | 2016-04-29 | 2016-04-29 | 一种六方氮化硼薄膜的转移方法 |
Publications (2)
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CN105908152A true CN105908152A (zh) | 2016-08-31 |
CN105908152B CN105908152B (zh) | 2018-09-25 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108660441A (zh) * | 2018-06-15 | 2018-10-16 | 厦门大学 | 一种氮化硼薄膜的转移方法 |
CN109722650A (zh) * | 2019-02-15 | 2019-05-07 | 清华-伯克利深圳学院筹备办公室 | 一种六方氮化硼材料及其制备方法和转移方法 |
GB2573812A (en) * | 2018-05-18 | 2019-11-20 | Cambridge Entpr Ltd | Synthesis And Transfer Methods |
CN110702702A (zh) * | 2019-09-06 | 2020-01-17 | 华东师范大学 | 一种定点转移二维材料到超薄低应力氮化硅悬空膜的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103031516A (zh) * | 2013-01-18 | 2013-04-10 | 浙江大学 | 一种六角相氮化硼薄膜的制备方法 |
US20140287244A1 (en) * | 2013-03-22 | 2014-09-25 | Sungkyunkwan University Foundation For Corporate Collaboration | Substrate assembly, method of forming the same, and electronic device including the same |
CN104532209A (zh) * | 2015-01-27 | 2015-04-22 | 厦门大学 | 一种在基底上制备晶片级大尺寸六方氮化硼的方法 |
CN105274491A (zh) * | 2015-11-12 | 2016-01-27 | 杭州电子科技大学 | 一种石墨烯-氮化硼异质相复合薄膜材料的制备方法 |
-
2016
- 2016-04-29 CN CN201610283359.3A patent/CN105908152B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103031516A (zh) * | 2013-01-18 | 2013-04-10 | 浙江大学 | 一种六角相氮化硼薄膜的制备方法 |
US20140287244A1 (en) * | 2013-03-22 | 2014-09-25 | Sungkyunkwan University Foundation For Corporate Collaboration | Substrate assembly, method of forming the same, and electronic device including the same |
CN104532209A (zh) * | 2015-01-27 | 2015-04-22 | 厦门大学 | 一种在基底上制备晶片级大尺寸六方氮化硼的方法 |
CN105274491A (zh) * | 2015-11-12 | 2016-01-27 | 杭州电子科技大学 | 一种石墨烯-氮化硼异质相复合薄膜材料的制备方法 |
Non-Patent Citations (4)
Title |
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C.R.DEAN等: "Boron nitride substrates for high quality graphene electronics", 《NATURE NANOTECHNOLOGY》 * |
P.J.ZOMER等: "A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride", 《APPLIED PHYSICS LETTERS》 * |
李玉伟等: "六方氮化硼原子层薄膜的制备研究", 《杭州电子科技大学学报(自然科学版)》 * |
陈辉等: "纳米SiO2包覆片状微米h-BN复合粉体的制备与表征", 《人工晶体学报》 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2573812A (en) * | 2018-05-18 | 2019-11-20 | Cambridge Entpr Ltd | Synthesis And Transfer Methods |
CN108660441A (zh) * | 2018-06-15 | 2018-10-16 | 厦门大学 | 一种氮化硼薄膜的转移方法 |
CN108660441B (zh) * | 2018-06-15 | 2019-09-20 | 厦门大学 | 一种氮化硼薄膜的转移方法 |
CN109722650A (zh) * | 2019-02-15 | 2019-05-07 | 清华-伯克利深圳学院筹备办公室 | 一种六方氮化硼材料及其制备方法和转移方法 |
CN110702702A (zh) * | 2019-09-06 | 2020-01-17 | 华东师范大学 | 一种定点转移二维材料到超薄低应力氮化硅悬空膜的方法 |
CN110702702B (zh) * | 2019-09-06 | 2021-11-19 | 华东师范大学 | 一种定点转移二维材料到超薄低应力氮化硅悬空膜的方法 |
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CN105908152B (zh) | 2018-09-25 |
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Effective date of registration: 20210105 Address after: 221600 Peixian Economic Development Zone, Xuzhou City, Jiangsu Province, North of Peihe Highway and East of Hanrun Road (Science and Technology Pioneer Park) Patentee after: JIANGSU ZHONGSHANG CARBON INSTITUTE Co.,Ltd. Address before: 310018 room 504, building 9, 20 kejiyuan Road, Baiyang street, Qiantang New District, Hangzhou City, Zhejiang Province Patentee before: Zhejiang Qibo Intellectual Property Operation Co.,Ltd. |