CN105874586A - 导电层路由 - Google Patents

导电层路由 Download PDF

Info

Publication number
CN105874586A
CN105874586A CN201480072114.5A CN201480072114A CN105874586A CN 105874586 A CN105874586 A CN 105874586A CN 201480072114 A CN201480072114 A CN 201480072114A CN 105874586 A CN105874586 A CN 105874586A
Authority
CN
China
Prior art keywords
contacts
active
active contacts
exposed
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480072114.5A
Other languages
English (en)
Chinese (zh)
Inventor
S·S·宋
K·利姆
Z·王
J·J·徐
X·陈
C·F·耶普
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN105874586A publication Critical patent/CN105874586A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0698—Local interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201480072114.5A 2014-01-03 2014-11-13 导电层路由 Pending CN105874586A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461923482P 2014-01-03 2014-01-03
US61/923,482 2014-01-03
US14/283,162 US9508589B2 (en) 2014-01-03 2014-05-20 Conductive layer routing
US14/283,162 2014-05-20
PCT/US2014/065529 WO2015102753A1 (en) 2014-01-03 2014-11-13 Conductive layer routing

Publications (1)

Publication Number Publication Date
CN105874586A true CN105874586A (zh) 2016-08-17

Family

ID=52102992

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480072114.5A Pending CN105874586A (zh) 2014-01-03 2014-11-13 导电层路由

Country Status (5)

Country Link
US (1) US9508589B2 (https=)
EP (1) EP3090444B1 (https=)
JP (1) JP6224844B2 (https=)
CN (1) CN105874586A (https=)
WO (1) WO2015102753A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9455226B2 (en) 2013-02-01 2016-09-27 Mediatek Inc. Semiconductor device allowing metal layer routing formed directly under metal pad
US9536833B2 (en) 2013-02-01 2017-01-03 Mediatek Inc. Semiconductor device allowing metal layer routing formed directly under metal pad
EP3131118B1 (en) * 2015-08-12 2019-04-17 MediaTek Inc. Semiconductor device allowing metal layer routing formed directly under metal pad

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120211837A1 (en) * 2011-02-17 2012-08-23 Globalfoundries Inc. Semiconductor device comprising self-aligned contact elements
CN103199063A (zh) * 2012-01-06 2013-07-10 格罗方德半导体公司 具电介质帽盖于接触件上的半导体设备及相关的制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01117342A (ja) * 1987-10-30 1989-05-10 Oki Electric Ind Co Ltd コンタクトホールの形成方法
JPH0982799A (ja) * 1995-09-13 1997-03-28 Hitachi Ltd 配線基板およびその製造方法
US6174803B1 (en) 1998-09-16 2001-01-16 Vsli Technology Integrated circuit device interconnection techniques
US20070196983A1 (en) * 2006-02-22 2007-08-23 Hynix Semiconductor Inc. Method of manufacturing non-volatile memory device
WO2007116515A1 (ja) * 2006-04-07 2007-10-18 Philtech Inc. 半導体装置及びその製造方法、ドライエッチング方法、並びに配線材料の作製方法
KR100811442B1 (ko) 2007-02-09 2008-03-07 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
US7791109B2 (en) 2007-03-29 2010-09-07 International Business Machines Corporation Metal silicide alloy local interconnect
JP2008270256A (ja) * 2007-04-16 2008-11-06 Denso Corp 半導体装置およびその製造方法
US8907316B2 (en) 2008-11-07 2014-12-09 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
US8124525B1 (en) 2010-10-27 2012-02-28 International Business Machines Corporation Method of forming self-aligned local interconnect and structure formed thereby

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120211837A1 (en) * 2011-02-17 2012-08-23 Globalfoundries Inc. Semiconductor device comprising self-aligned contact elements
CN103199063A (zh) * 2012-01-06 2013-07-10 格罗方德半导体公司 具电介质帽盖于接触件上的半导体设备及相关的制造方法

Also Published As

Publication number Publication date
JP2017501581A (ja) 2017-01-12
US20150194339A1 (en) 2015-07-09
US9508589B2 (en) 2016-11-29
EP3090444A1 (en) 2016-11-09
WO2015102753A1 (en) 2015-07-09
JP6224844B2 (ja) 2017-11-01
EP3090444B1 (en) 2021-06-30

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20160817