CN105874586A - 导电层路由 - Google Patents

导电层路由 Download PDF

Info

Publication number
CN105874586A
CN105874586A CN201480072114.5A CN201480072114A CN105874586A CN 105874586 A CN105874586 A CN 105874586A CN 201480072114 A CN201480072114 A CN 201480072114A CN 105874586 A CN105874586 A CN 105874586A
Authority
CN
China
Prior art keywords
contacts
active
active contacts
exposed
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480072114.5A
Other languages
English (en)
Chinese (zh)
Inventor
S·S·宋
K·利姆
Z·王
J·J·徐
X·陈
C·F·耶普
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN105874586A publication Critical patent/CN105874586A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201480072114.5A 2014-01-03 2014-11-13 导电层路由 Pending CN105874586A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461923482P 2014-01-03 2014-01-03
US61/923,482 2014-01-03
US14/283,162 2014-05-20
US14/283,162 US9508589B2 (en) 2014-01-03 2014-05-20 Conductive layer routing
PCT/US2014/065529 WO2015102753A1 (en) 2014-01-03 2014-11-13 Conductive layer routing

Publications (1)

Publication Number Publication Date
CN105874586A true CN105874586A (zh) 2016-08-17

Family

ID=52102992

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480072114.5A Pending CN105874586A (zh) 2014-01-03 2014-11-13 导电层路由

Country Status (5)

Country Link
US (1) US9508589B2 (enExample)
EP (1) EP3090444B1 (enExample)
JP (1) JP6224844B2 (enExample)
CN (1) CN105874586A (enExample)
WO (1) WO2015102753A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9536833B2 (en) 2013-02-01 2017-01-03 Mediatek Inc. Semiconductor device allowing metal layer routing formed directly under metal pad
US9455226B2 (en) 2013-02-01 2016-09-27 Mediatek Inc. Semiconductor device allowing metal layer routing formed directly under metal pad
EP3131118B1 (en) * 2015-08-12 2019-04-17 MediaTek Inc. Semiconductor device allowing metal layer routing formed directly under metal pad

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120211837A1 (en) * 2011-02-17 2012-08-23 Globalfoundries Inc. Semiconductor device comprising self-aligned contact elements
CN103199063A (zh) * 2012-01-06 2013-07-10 格罗方德半导体公司 具电介质帽盖于接触件上的半导体设备及相关的制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01117342A (ja) * 1987-10-30 1989-05-10 Oki Electric Ind Co Ltd コンタクトホールの形成方法
JPH0982799A (ja) * 1995-09-13 1997-03-28 Hitachi Ltd 配線基板およびその製造方法
US6174803B1 (en) 1998-09-16 2001-01-16 Vsli Technology Integrated circuit device interconnection techniques
US20070196983A1 (en) * 2006-02-22 2007-08-23 Hynix Semiconductor Inc. Method of manufacturing non-volatile memory device
JPWO2007116515A1 (ja) * 2006-04-07 2009-08-20 株式会社フィルテック 半導体装置及びその製造方法、ドライエッチング方法、配線材料の作製方法、並びにエッチング装置
KR100811442B1 (ko) 2007-02-09 2008-03-07 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
US7791109B2 (en) 2007-03-29 2010-09-07 International Business Machines Corporation Metal silicide alloy local interconnect
JP2008270256A (ja) * 2007-04-16 2008-11-06 Denso Corp 半導体装置およびその製造方法
US8907316B2 (en) 2008-11-07 2014-12-09 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
US8124525B1 (en) 2010-10-27 2012-02-28 International Business Machines Corporation Method of forming self-aligned local interconnect and structure formed thereby

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120211837A1 (en) * 2011-02-17 2012-08-23 Globalfoundries Inc. Semiconductor device comprising self-aligned contact elements
CN103199063A (zh) * 2012-01-06 2013-07-10 格罗方德半导体公司 具电介质帽盖于接触件上的半导体设备及相关的制造方法

Also Published As

Publication number Publication date
JP2017501581A (ja) 2017-01-12
US9508589B2 (en) 2016-11-29
WO2015102753A1 (en) 2015-07-09
EP3090444A1 (en) 2016-11-09
US20150194339A1 (en) 2015-07-09
JP6224844B2 (ja) 2017-11-01
EP3090444B1 (en) 2021-06-30

Similar Documents

Publication Publication Date Title
CN105981157B (zh) 缩放布局设计中将虚栅极接地
US10755969B2 (en) Multi-patterning techniques for fabricating an array of metal lines with different widths
KR102167351B1 (ko) 라인 백엔드(Back End of Line)(BEOL) 상호접속을 위한 삭감 자기 정렬 비아 및 플러그 패터닝
TWI742018B (zh) 用於半導體晶粒的互連結構的金屬化層、用於製造所述金屬化層的方法、包含所述金屬化層的積體電路結構及包含所述積體電路結構的計算裝置
TWI706442B (zh) 用於後段製程線路（ｂｅｏｌ）互連之柵格自行對準金屬穿孔處理方法及由其所生成的結構
CN105745745A (zh) 用于后段工艺(beol)互连件的借助光桶的自对准过孔和插塞图案化
US9401357B2 (en) Directional FinFET capacitor structures
CN104798219A (zh) 使用中部制程(mol)导电层的电容器
CN105874586A (zh) 导电层路由
US20150137201A1 (en) High density linear capacitor
KR101360134B1 (ko) 반도체 장치의 제조 방법
CN107004636B (zh) 通孔材料选择和处理
US10756085B2 (en) Integrated circuit with metal gate having dielectric portion over isolation area
CN107482010B (zh) 一种半导体器件及其制作方法、电子装置
US9478490B2 (en) Capacitor from second level middle-of-line layer in combination with decoupling capacitors

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20160817

RJ01 Rejection of invention patent application after publication