CN105849311A - 具有装载/卸载装置和反应器的用于外延生长的反应室 - Google Patents

具有装载/卸载装置和反应器的用于外延生长的反应室 Download PDF

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CN105849311A
CN105849311A CN201480067668.6A CN201480067668A CN105849311A CN 105849311 A CN105849311 A CN 105849311A CN 201480067668 A CN201480067668 A CN 201480067668A CN 105849311 A CN105849311 A CN 105849311A
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reative cell
hollow guide
guide member
support component
wall
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CN105849311B (zh
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弗朗西斯科·科里亚
D·克里帕
劳拉·戈博
M·毛切里
温森佐·奥格里阿里
弗兰科·佩雷蒂
马尔科·普利西
卡尔梅洛·韦基奥
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Abstract

一种用于外延生长的反应器的反应室，包括：‑具有凹部的壁(1)，‑衬托器(7)，其包括主体和凸起，其中所述主体相对于所述壁(1)以旋转方式放置在所述凹部中，‑圆盘状支撑元件(8)，其具有适合于稳定地放置在所述凸起上的形状，具有使得从所述凸起径向地突出的尺寸并且适合于支撑将经历外延生长的一个或更多个基底，和‑平坦覆盖物(91，92)，其位于所述壁(1)的上方并且具有在所述圆盘状支撑元件(8)处的孔(10)；其中所述孔(10)的形状对应于所述圆盘状支撑元件(8)的形状；其中所述覆盖物(92)具有用于装载/卸载所述圆盘状支撑元件(8)的装置(16)的通行的至少一个中空导引件(11，12)，其中所述中空导引件(11，12)从所述覆盖物(92)的边缘开始延伸至所述孔(10)。

Description

具有装载/卸载装置和反应器的用于外延生长的反应室
发明领域
本发明涉及一种用于外延生长的反应器的反应室，该反应室适合与其装载/卸载装置和反应器一起使用。
本发明涉及微电子学领域，更具体地涉及用于处理在生产微电子部件中使用的基底的设备的领域。
现有技术
反应室对用于具有良好特性的外延生长的反应器是重要的。
反应室的重要方面是基底的装载和卸载。
这样的方面还影响反应器的生产率；实际上，外延生长在非常高的温度下进行(例如，对于硅常用温度是1000-1200℃且对于碳化硅常用温度是1500-1700℃)，并且因此，如果装载和卸载在低温下进行(例如，50-200℃)，那么在卸载之后、在开始生长过程之前必须等待室变热，并且在卸载之前等待室冷却。
此外，值得注意的是，基底必须特别细心地操作以防止损坏(特别地，以防止损坏生长层的；在高温下处理基底(例如，800-1200℃)甚至是更困难的。
最后，值得注意的是，装载和卸载解决方案必须很好地与生长解决方案组合(两种解决方案在反应室构造中紧密联系)；实际上，获得基底上的良好生长甚至比很好地装载和卸载基底更重要。
本发明的主要目的是提供与用于在基底上生长的良好解决方案组合的用于装载和卸载基底的良好解决方案。
特别地，本发明集中于适合于碳化硅的外延生长的解决方案。
概述
这样的目的借助于具有在所附权利要求中示出的技术特征的反应室来实现，该所附权利要求形成了本描述的主要部分。
附图列表
本发明根据结合附图考虑的以下详细描述将变得更明显，在附图中：
图1示出了根据本发明的反应室的实施方案的示例的简化剖面图；
图2示出了图1中的反应室的第一简化的横截面图(沿着第一剖面截取)；
图3示出了图1中的反应室的第二简化的横截面图(沿着第二剖面截取)；
图4示出了图1中的反应室的第三简化的横截面图(沿着第三剖面截取)；
图5示出了图1中的反应室的简化俯视图；
图6示出了适合于图1中的反应室的装载/卸载装置的实施方案的示例的三幅不同的侧视图；以及
图7示出了在三种不同的情况下与图6中的装置组合的图1中的室的简化的横截面图(沿着图2中使用的剖面截取)。
这样的描述和这样的附图仅通过示例的方式提供并且因此是非限制性的。
这些图全部适用于实施方案的相同示例。
如无疑明显的是，其主要的有利的方面在所附权利要求中界定的本发明可以以各种实践方式来实现和应用。
详细描述
图中的反应室用于在基底上的外延生长，具体地用于在碳化硅上的外延生长。
反应室具有长形的形状(因此有可能界定纵向方向，其在全部附图中对应于水平方向并且考虑到室的大体上圆柱对称性甚至对应于纵向轴线)并且包括四个平坦的壁，该四个平坦的壁为平行六面体形的反应区和沉积区定界；该平行六面体的横截面是具有相对大的基部和相对小的高度的矩形；具有平坦的下部壁1、平坦的上壁2、平坦的左侧壁3和平坦的右侧壁4。室包括其他两个弯曲壁5和6；弯曲壁5通过它的端部连接至平坦的壁1的端部(例如，参见图2)；弯曲壁6通过它的端部连接至平坦的壁2的端部(例如，参见图2)。在图中，壁1、2、3、4、5、6被示出，犹如它们被整体式地制造，但是它们可以是并排地布置的且适当地连接的独立的部分。这样的一组壁是已知的，例如且特别地，在国际专利申请WO2004/053187和WO 2004/053188中，参考该两个专利申请以获得另外的技术细节。
图1中和图5中绘制的两个箭头代表反应气体的来流FI和废气的输出流FU；反应气体进入反应室和沉积室，由于该区域中的高温而化学地反应，产生固体材料的沉积，并且作为(或多或少排放的)废气从反应区和沉积区排出。值得注意的是，反应室的加热装置在任何图中均未示出；它们通常是电磁加热装置。
此外，反应室包括衬托器(susceptor)7和支撑元件8，该支撑元件8适合于支撑一个或更多个基底以同时地经历外延生长(每一个基底分别定位在支撑元件的浅的“凹部”中)；支撑元件8稳定地放置在衬托器7上。特别地，衬托器7包括在下方的主体(通常是圆柱形的)和在上部的凸起(relief)(通常是圆柱形的或棱形的)。特别地，支撑元件8是圆盘状的并且通常是圆形的；支撑元件8稳定地放置在衬托器7的凸起上并且被设定尺寸以从衬托器7的凸起径向地突出。
下部壁1具有衬托器7的主体放置在其中的凹部；通常，凹部和主体具有相同的形状；在图中的示例中，凹部和主体正好具有相同的圆柱形形状和具有几乎相同的尺寸(仅具有小的差异以允许主体在凹部中旋转)；衬托器7的主体放置在凹部中以相对于壁1是可旋转的；因此，当衬托器7旋转时，支撑元件8旋转。在图中，值得注意的是，在衬托器7的主体的下部面中具有中空部和中心盲孔；盲孔用于接纳壁1的导引衬托器7的旋转的销；中空部用于接纳用于引起衬托器的旋转的气体射流；这些气体射流来自气体流，该气体流源于反应室的外部并且在纵向的和中心的导管内部穿过下部壁1到达衬托器7，特别地到达壁1的衬托器7的主体放置在其中的凹部下方的区域。这样的系统，例如且特别地，根据国际专利申请WO 2005/121417是已知的，为获得另外的技术细节应参考该专利申请。
最后，反应室包括平坦覆盖物，该平坦覆盖物对应于由参考数字91和92指示的部件，特别地，该部件在图1、图3、图4和图5中是可见的。该两个部件91和92构成单一平坦覆盖物的两个概念上相邻的元件；这样的平坦覆盖物对于整个反应区和沉积区既纵向地又横向地延伸(特别地参见图5)，除孔10之外，如将在下面更详细地描述的；通常，平坦覆盖物可以由多个相邻元件组成；例如，部件91和部件92可以被分成两个，一个在第一侧上，例如在右部上(就室的纵向方向而言)，而一个在第二侧上，例如在室的左部上(就室的纵向方向而言)。
在图的示例中，这样的覆盖元件基本上由两个平板组成：第一板91位于室的入口区中且第二板92位于室的出口或排放区中；为了清楚起见，应参考箭头FI和箭头FU。值得注意的是，用于将覆盖元件固定至室的、特别地将它们固定至室的开口的装置在任何图中均未示出。术语“平坦覆盖物”源自其用于覆盖在下部的壁的事实，该在下部的壁是下部壁1，并且该下部壁1用于将平坦表面(在最大的可能程度上)制造成反应区和沉积区的下限—反应区和沉积区的横截面对于区域自身的整个长度而言应当是尽可能恒定的以获得基底上的良好生长，并且更确切地说，该部分是通常矩形的或至少下部侧是直的。
平坦覆盖物，两个元件91和92的整体，具有在支撑元件8处的孔10(参见图1、图2和图5)。孔10的形状对应于支撑元件8的形状；出于下面将解释的原因，孔10的形状与元件8的形状不完全相同(特别地，孔10稍微较大)。如图1中清楚地示出的，元件91和92的上表面以及元件8的上表面是对齐的(图1示出元件8的恰好填充有基底的凹部)。
此外，平坦覆盖物具有用于装载/卸载支撑元件的装置的通行的至少一个中空导引件(即，不在凸起中)。
在图中的示例中(特别地参见图5)，覆盖元件92具有用于装载/卸载支撑元件8的装置16(参见图6)的通行的两个中空导引件11(在图4中的左部)和12(在图4中的右部)；这两个导引件11和12从覆盖元件92的相同前边缘开始延伸至孔10；中空导引件11和12是平行的并且在覆盖元件92的两个侧边缘处；可选择地，这样的导引件可以例如制造成在元件92中的以距两个侧边缘的少量距离的平行切割部。
图2中的横截面平面正好在室的中心中；图3中的横截面平面在中心和入口之间的中途；图4中的横截面平面在中心和出口之间的中途。
在图5中，孔10是圆形的并且导引件11和12延伸至圆的关于其中心相对的两个周边区(由于该原因，孔的形状表现为部分圆形)。
如提到的，装置16用于装载/卸载支撑元件8并且室设置有用于传递它并且使它与支撑元件一起升高的适当间距。
因此，明显的是，解决方案允许在非常高的温度(1000℃或甚至更高)下卸载基底，因为它是待处理的支撑装置，并且不直接是基底。相似的考虑适用于基底的装载。
室的壁(图中的1、2、3、4、5和6)的整体，其具有大体上圆柱形(或可选择地大体上椭圆形)的外部形状，由热绝缘材料、特别是纤维的或多孔的或泡沫的石墨包围；在侧面，存在邻近壁3、4、5和6的热绝缘材料的层13；在前面，存在由放置在室的入口处的热绝缘材料制成的第一层14(特别地，圆形或椭圆形)；在前面，存在由放置在室的出口处的热绝缘材料制成的第二层15(特别地，圆形或椭圆形)；层14和15具有用于让反应气体进入的、用于让废气离开的且用于其它辅气流过室壁的开口。
有利地，反应室，如从图1至图5的图中示意性地示出的反应室，还可以具有结构性元件，例如，国际专利申请WO 2006/024572和WO2007/088420中描述的和示出的那些的全部或一部分。
图6示出了适合于附加于此的图的反应室的装载/卸载装置的实施方案的示例。
装置16设计成举升并且运输大体上平坦的圆盘状元件，特别是支撑元件8；装置16可以举升和运输各种形状的元件，即使元件8是圆形的。装置16的用于夹持元件8的部分大体上对应于两个翼部20和两个肩部19；装置16适合于通过在其下部边缘上借助于翼部20推动来举升元件8。更具体地，装置16包括：
-至少一个操纵杆18(适合于水平地布置)(仅在图6中部分地示出)，
-两个肩部19(适合于竖直地布置)，以两个小的矩形盘的形式，借助于杆18的“V”形枝部17连接至杆18，和
-两个翼部20(适合于水平地布置)，以两个小的矩形盘的形式分别连接至两个肩部19。
操纵杆的枝部的形状可以不同于“V”形，例如，它可以是半圆形的。
杆18的长度是这样的以致从反应区和沉积区、特别地从层15突出水平伸展部(例如，10-40cm)，以精确地允许被操纵；通常且有利地，杆18适合于由机器人操纵。
可以参考图7A、图7B和图7C以借助于装置16理解元件8的装载操作和卸载操作。
装置16从室的出口插入室中，使室保持水平和装置水平并且定向装置，使得肩部19和翼部20首先进入室并且然后是精确地用于操纵它的操纵杆18。插入发生，使得杆18及其枝部17略微地在覆盖物92的上方，两个翼部20略微地在覆盖物92的上方并且两个肩部19分别在两个导引件11和12的覆盖物92的侧部。装置16安排成水平地滑动直到翼部20到达元件8的侧部(参见图5)-翼部20的中心因此大体上在室的元件8的中心也位于该位置的中心横剖面中。在这种情况下(图7A)，支撑刚刚处理过的基底的元件8放置在衬托器7上，枝部17的下表面在元件8的上方并且更接近于此(在图7A中，它们似乎接触，但是存在给定距离)；翼部20位于元件8的边缘的下方并且从其略微地隔开。装置16(图7B)被略微地升高，元件8放置在衬托器7的上方，枝部17的下表面在元件8的上方并且略微地从其隔开；翼部20与元件8的边缘接触。装置16(图7C)被进一步升高，元件8不在放置在衬托器7的上方并且从其足够地隔开，枝部17的下表面在元件8的上方并且略微地从其隔开；翼部20与元件8的边缘接触。此时，装置16和元件8可以通过使它们朝向室的出口向后水平地滑动来从室抽出。
支撑待处理的基底的元件8如上面所描述地但是以相反的方向被插入。
依据上述，明显的是，除其它情况外，装置16的水平滑动必须被准确地控制，特别是当它被插入时(当承载具有一个或更多个待处理的基底的支撑元件时以及且当不支撑任何事物时)。为了该目的，例如，覆盖元件92可以设置有棒形突出物(在图中未示出)，该棒形突出物适合于从反应区和沉积区、特别是从层15突出水平伸展部(例如，10-40cm)。由于元件92的位置界定孔10的位置并且与衬托器7的位置密切相关，因此有可能在以良好准确度确定何时中断装置16从外部的滑动；换言之，棒形突出部的外部端可以用作装置16的运动的水平(和竖直)参考。
反应室的部件的材料的选择是重要的，以便获得对反应室的良好的操作，并且由此获得反应器的良好操作。下面描述了一系列可能的解决方案，它们自身良好并且在组合时是优异的。
室的壁、特别是下壁1，可以由石墨制成，由于覆盖物即元件91和92的存在而无需涂覆。衬托器7可以由石墨制成并且由于覆盖物即元件91和92的存在而不必涂覆。
支撑元件8可以由石墨制成，除了它支撑一个或更多个基底的地方外整体地涂覆有一层碳化硅；覆盖物用于避免或至少限制膨胀的问题(例如，与外延生长过程期间的假的沉积相关)。
平坦覆盖物，特别是元件91和92由石墨制成，整体地涂覆有一层碳化硅；覆盖物用于避免或至少限制膨胀的问题(例如，与在外延生长过程期间的假的沉积相关)。
装载/卸载装置16可以全部由石英制成以成为刚性的、坚固的并且防止与室的高温相关的问题。尽管装置由石英制成，适当的是，评估装置16的元件8的装载和卸载温度以适当地执行其举升和运输功能。根据本发明的反应室设备，特别是如上面描述的反应室的反应室，通常在反应器中用于外延生长。
作为使用将能量传递至室以用于加热室的特定解决方案的，具有反应区和沉积区的特定隔离的热壁室，它特别地适合于需要非常高的温度例如1500℃以更高温度的反应器；如此非常高的温度是用于碳化硅在基底(通常是碳化硅)上的外延沉积的温度。附带地，与上面描述的材料和涂层相关的指示特别是针对碳化硅的外延生长而被精确地界定。

Claims (10)

1.一种用于外延生长的反应器的反应室，包括：
-壁(1)，其具有凹部，
-衬托器(7)，其包括主体和凸起，其中所述主体相对于所述壁(1)以旋转方式放置在所述凹部中，
-圆盘状支撑元件(8)，其适合于稳定地放置在所述凸起上，所述支撑元件(8)具有带有使得从所述凸起径向地突出的尺寸的形状，并且适合于支撑将经历外延生长的一个或更多个基底，和
-平坦覆盖物(91，92)，其位于所述壁(1)的上方并且具有在所述圆盘状支撑元件(8)处的孔(10)；
其中所述孔(10)的形状对应于所述圆盘状支撑元件(8)的形状；
其中所述覆盖物(92)具有用于装载/卸载所述圆盘状支撑元件(8)的装置(16)的通行的至少一个中空导引件(11，12)，其中所述中空导引件(11，12)从所述覆盖物(92)的边缘开始延伸至所述孔(10)。
2.根据权利要求1所述的反应室，其中，所述覆盖物(92)具有第一中空导引件(11)和第二中空导引件(12)，其中所述第一中空导引件和第二中空导引件(11，12)从所述覆盖物(92)的边缘开始延伸至所述孔(10)。
3.根据权利要求2所述的反应室，其中，所述第一中空导引件和第二中空导引件(11，12)是平行的。
4.根据权利要求3所述的反应室，其中，所述第一中空导引件和第二中空导引件(11，12)在所述覆盖物的(92)的两个侧边缘处。
5.根据权利要求2或3或4所述的反应室，其中，所述孔(10)是圆形的，并且其中所述第一中空导引件和第二中空导引件(11，12)延伸至圆的、关于其中心相对的两个周边区。
6.根据前述权利要求中的任一项所述的反应室，
其中所述壁(1)由未涂覆的石墨制成；
其中所述衬托器(7)由未涂覆的石墨制成；
其中所述支撑元件(8)由石墨制成，除了所述支撑元件(8)支撑一个或更多个基底的地方外，所述支撑元件(8)整体地涂覆有一层碳化硅；
其中所述平坦覆盖物(91，92)由石墨制成，所述平坦覆盖物(91，92)整体地涂覆有一层碳化硅。
7.根据前述权利要求中的任一项所述的反应室，设置有用于装载/卸载所述支撑元件(8)的装置(16)，所述装置(16)适合于通过从底部推动其边缘来举升所述支撑元件(8)。
8.根据权利要求7所述的反应室，其中，所述装载/卸载装置(16)包括：
-至少一个操纵杆(18)，
-两个肩部(19)，其在所述至少一个操纵杆(18)处被连接(17)，并且适合于在所述中空导引件(11，12)中滑动，和
-两个翼部(20)，其分别连接至所述两个肩部(19)，并且适合于从底部推动所述支撑元件(8)的边缘。
9.根据权利要求7或8所述的反应室，其中，所述装载/卸载装置(16)全部由石英制成。
10.一种用于外延生长的反应器，包括根据前述权利要求中的任一项所述的反应室。
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