CN105837218A - 一种中间相炭微球增强的碳化硅基陶瓷电路板基板材料及其制备方法 - Google Patents
一种中间相炭微球增强的碳化硅基陶瓷电路板基板材料及其制备方法 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 title claims abstract description 24
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 22
- 239000002931 mesocarbon microbead Substances 0.000 title claims abstract description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims description 10
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- 239000000843 powder Substances 0.000 claims abstract description 10
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- 238000000498 ball milling Methods 0.000 claims description 9
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
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- RCMWGBKVFBTLCW-UHFFFAOYSA-N barium(2+);dioxido(dioxo)molybdenum Chemical compound [Ba+2].[O-][Mo]([O-])(=O)=O RCMWGBKVFBTLCW-UHFFFAOYSA-N 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
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- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
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- 229910021641 deionized water Inorganic materials 0.000 claims description 3
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- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
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- 239000002904 solvent Substances 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
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Abstract
本发明公开了一种中间相炭微球增强的碳化硅基陶瓷电路板基板材料，该碳化硅基陶瓷基板以微米级的碳化硅、氧化镁混合烧结，制备的坯体内部结构致密，烧结温度和烧结密度均获得提升，生产成本得到控制，而含有纳米陶瓷粉透明液体的聚乙二醇复合溶剂对粉体间的浸润性和粘结能力强，可使得各物料间均匀分散包覆，制成混合均匀紧致的坯体，加入的中间相炭微球有良好的粘结能力，可进一步提升坯体的烧结致密度，减少气孔率，同时提高材料的导热性，坯体在相对较低的烧结温度下即可得到高致密度、高热稳定性、高导热的复合陶瓷基板，应用潜力巨大。
Description
技术领域
本发明涉及碳化硅陶瓷制备技术领域，尤其涉及一种中间相炭微球增强的碳化硅基陶瓷电路板基板材料及其制备方法。
背景技术
随着电子元器件功率和密度的增大，致使单位体积发热量也随之增加，对电路基板的综合性能要求越来越高，其中陶瓷基板具备良好的综合性能，在绝缘性、导热性以及热膨胀性、化学稳定性等方面表现突出，逐渐被广泛的应用于基板材料中，其中沿用较久的主要是以氧化铝、氧化铍作为基板原料，然而氧化铝陶瓷片存在热导率低、热膨胀系数与Si不相匹配等缺点，氧化铍陶瓷虽然综合性能较为优良，但是其生产成本较高、有毒，氮化铝陶瓷虽然综合性能较为优良，但生产成本较高，应用也受到限制，反之以碳化硅作为基板材料在使用性能上则具有较为明显的优势。
虽然碳化硅陶瓷基板的应用前景广阔，然而在实际生产过程中存在烧结致密度低、原料利用率低、绝缘性有待提高等等问题，制约着这类材料的大规模使用，急需从原料配制及生产工艺上做进一步的改进。
发明内容
本发明目的就是为了弥补已有技术的缺陷，提供一种中间相炭微球增强的碳化硅基陶瓷电路板基板材料及其制备方法。
本发明是通过以下技术方案实现的：
一种中间相炭微球增强的碳化硅基陶瓷电路板基板材料，该材料由以下重量份的原料制成：碳化硅80-90、氧化镁10-12、钼酸钡1-2、中间相炭微球2-3、磷酸锆4-5、硅烷偶联剂kh550
1-2、甘油8-10、乙二醇5-6、聚乙二醇1-2、纳米陶瓷粉透明液体10-12、去离子水50-60。
所述的一种中间相炭微球增强的碳化硅基陶瓷电路板基板材料的制备方法为：
（1）先将碳化硅球磨分散12-15h，随后加入氧化镁、钼酸钡、中间相炭微球、磷酸锆、硅烷偶联剂kh550继续混合球磨分散3-4h后，加入其它剩余物料，密闭混合球磨分散4-5h，将所得浆料完全干燥后过200-300目筛；
（2）将上述过筛粉体投入模具中压制成型，所得坯体在400-500℃下进行排胶处理，处理结束后将坯体送入真空电阻炉中，其中氮气和氢气的流量比为1:0.5-0.6，并在氮气和氢气混合气体氛围下以1450-1550℃的温度保温烧结4-5h，烧结结束后自然冷却至室温，即得所述复合陶瓷基板材料。
本发明制备的碳化硅基陶瓷基板以微米级的碳化硅、氧化镁混合烧结，制备的坯体内部结构致密，烧结温度和烧结密度均获得提升，生产成本得到控制，而含有纳米陶瓷粉透明液体的聚乙二醇复合溶剂对粉体间的浸润性和粘结能力强，可使得各物料间均匀分散包覆，制成混合均匀紧致的坯体，加入的中间相炭微球有良好的粘结能力，可进一步提升坯体的烧结致密度，减少气孔率，同时提高材料的导热性，坯体在相对较低的烧结温度下即可得到高致密度、高热稳定性、高导热的复合陶瓷基板，应用潜力巨大。
具体实施方式
该陶瓷基板材料由以下重量份的原料制成：碳化硅80、氧化镁10、钼酸钡1、中间相炭微球2、磷酸锆4、硅烷偶联剂kh550 1、甘油8、乙二醇5、聚乙二醇1、纳米陶瓷粉透明液体10、去离子水50。
其制备方法为：
（1）先将碳化硅球磨分散12h，随后加入氧化镁、钼酸钡、中间相炭微球、磷酸锆、硅烷偶联剂kh550继续混合球磨分散3h后，加入其它剩余物料，密闭混合球磨分散4h，将所得浆料完全干燥后过200目筛；
（2）将上述过筛粉体投入模具中压制成型，所得坯体在400℃下进行排胶处理，处理结束后将坯体送入真空电阻炉中，其中氮气和氢气的流量比为1:0.5，并在氮气和氢气混合气体氛围下以1450℃的温度保温烧结4h，烧结结束后自然冷却至室温，即得所述复合陶瓷基板材料。
该实施例制得的基板的性能测试结构为：
体积密度：3.44g/cm3；弯曲强度：556.2MPa；热导率：162.4（W/m.k）。
Claims (2)
1.一种中间相炭微球增强的碳化硅基陶瓷电路板基板材料，其特征在于，该材料由以下重量份的原料制成：碳化硅80-90、氧化镁10-12、钼酸钡1-2、中间相炭微球2-3、磷酸锆4-5、硅烷偶联剂kh550 1-2、甘油8-10、乙二醇5-6、聚乙二醇1-2、纳米陶瓷粉透明液体10-12、去离子水50-60。
2.如权利要求1所述的一种中间相炭微球增强的碳化硅基陶瓷电路板基板材料及其制备方法，其特征在于，所述的制备方法为：
（1）先将碳化硅球磨分散12-15h，随后加入氧化镁、钼酸钡、中间相炭微球、磷酸锆、硅烷偶联剂kh550继续混合球磨分散3-4h后，加入其它剩余物料，密闭混合球磨分散4-5h，将所得浆料完全干燥后过200-300目筛；
（2）将上述过筛粉体投入模具中压制成型，所得坯体在400-500℃下进行排胶处理，处理结束后将坯体送入真空电阻炉中，其中氮气和氢气的流量比为1:0.5-0.6，并在氮气和氢气混合气体氛围下以1450-1550℃的温度保温烧结4-5h，烧结结束后自然冷却至室温，即得所述复合陶瓷基板材料。
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