CN105826435A - 红光微发光二极管的形成方法、制造方法、背板及电子设备 - Google Patents
红光微发光二极管的形成方法、制造方法、背板及电子设备 Download PDFInfo
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- CN105826435A CN105826435A CN201610280001.5A CN201610280001A CN105826435A CN 105826435 A CN105826435 A CN 105826435A CN 201610280001 A CN201610280001 A CN 201610280001A CN 105826435 A CN105826435 A CN 105826435A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
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- 239000003292 glue Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
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- 230000000694 effects Effects 0.000 description 2
- 241000951490 Hylocharis chrysura Species 0.000 description 1
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- 238000002910 structure generation Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
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Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610280001.5A CN105826435B (zh) | 2016-04-28 | 2016-04-28 | 红光微发光二极管的形成方法、制造方法、背板及电子设备 |
Applications Claiming Priority (1)
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CN201610280001.5A CN105826435B (zh) | 2016-04-28 | 2016-04-28 | 红光微发光二极管的形成方法、制造方法、背板及电子设备 |
Publications (2)
Publication Number | Publication Date |
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CN105826435A true CN105826435A (zh) | 2016-08-03 |
CN105826435B CN105826435B (zh) | 2018-05-01 |
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CN201610280001.5A Active CN105826435B (zh) | 2016-04-28 | 2016-04-28 | 红光微发光二极管的形成方法、制造方法、背板及电子设备 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018214199A1 (zh) * | 2017-05-23 | 2018-11-29 | 深圳市华星光电技术有限公司 | 微发光二极管显示面板及其制作方法 |
CN109192821A (zh) * | 2018-08-31 | 2019-01-11 | 华灿光电(浙江)有限公司 | 发光二极管芯片的转移方法、转移基板及发光二极管阵列 |
WO2019114173A1 (zh) * | 2017-12-11 | 2019-06-20 | 厦门市三安光电科技有限公司 | 微发光二极管及其转移方法 |
CN110797449A (zh) * | 2019-11-05 | 2020-02-14 | 鸿利智汇集团股份有限公司 | 一种led封装及其封装方法 |
WO2020233242A1 (zh) * | 2019-05-20 | 2020-11-26 | 京东方科技集团股份有限公司 | 发光二极管模组及其制造方法、显示装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102341740A (zh) * | 2009-06-22 | 2012-02-01 | 财团法人工业技术研究院 | 发光单元阵列、其制造方法和投影设备 |
US20140027709A1 (en) * | 2012-07-30 | 2014-01-30 | John A. Higginson | Method and structure for receiving a micro device |
CN104106149A (zh) * | 2011-11-18 | 2014-10-15 | 勒克斯维科技公司 | 形成微led结构和具有电绝缘层的微led结构阵列的方法 |
CN105932297A (zh) * | 2016-06-12 | 2016-09-07 | 华南理工大学 | 一种碳纳米管导电涂层集流体及其制备工艺 |
-
2016
- 2016-04-28 CN CN201610280001.5A patent/CN105826435B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102341740A (zh) * | 2009-06-22 | 2012-02-01 | 财团法人工业技术研究院 | 发光单元阵列、其制造方法和投影设备 |
CN104106149A (zh) * | 2011-11-18 | 2014-10-15 | 勒克斯维科技公司 | 形成微led结构和具有电绝缘层的微led结构阵列的方法 |
US20140027709A1 (en) * | 2012-07-30 | 2014-01-30 | John A. Higginson | Method and structure for receiving a micro device |
CN105932297A (zh) * | 2016-06-12 | 2016-09-07 | 华南理工大学 | 一种碳纳米管导电涂层集流体及其制备工艺 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018214199A1 (zh) * | 2017-05-23 | 2018-11-29 | 深圳市华星光电技术有限公司 | 微发光二极管显示面板及其制作方法 |
US10269779B2 (en) | 2017-05-23 | 2019-04-23 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Micro light-emitting-diode display panel and manufacturing method thereof |
WO2019114173A1 (zh) * | 2017-12-11 | 2019-06-20 | 厦门市三安光电科技有限公司 | 微发光二极管及其转移方法 |
US11456400B2 (en) | 2017-12-11 | 2022-09-27 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light-emitting diode and method for transferring the same |
CN109192821A (zh) * | 2018-08-31 | 2019-01-11 | 华灿光电(浙江)有限公司 | 发光二极管芯片的转移方法、转移基板及发光二极管阵列 |
WO2020233242A1 (zh) * | 2019-05-20 | 2020-11-26 | 京东方科技集团股份有限公司 | 发光二极管模组及其制造方法、显示装置 |
CN110797449A (zh) * | 2019-11-05 | 2020-02-14 | 鸿利智汇集团股份有限公司 | 一种led封装及其封装方法 |
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CN105826435B (zh) | 2018-05-01 |
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Address after: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Applicant after: GOERTEK Inc. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Applicant before: Goertek Inc. |
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Effective date of registration: 20221122 Address after: 261031 workshop 1, phase III, Geer Photoelectric Industrial Park, 3999 Huixian Road, Yongchun community, Qingchi street, high tech Zone, Weifang City, Shandong Province Patentee after: GoerTek Optical Technology Co.,Ltd. Address before: 261031 No. 268 Dongfang Road, Weifang hi tech Development Zone, Shandong, China Patentee before: GOERTEK Inc. |
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