CN105786074B - A kind of SOI CMOS radio-frequency switch circuit structures - Google Patents
A kind of SOI CMOS radio-frequency switch circuit structures Download PDFInfo
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- CN105786074B CN105786074B CN201610246200.4A CN201610246200A CN105786074B CN 105786074 B CN105786074 B CN 105786074B CN 201610246200 A CN201610246200 A CN 201610246200A CN 105786074 B CN105786074 B CN 105786074B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
Abstract
The present invention discloses a kind of SOI CMOS radio-frequency switch circuit structures, and the input terminal of the decoder is connected to including band-gap reference circuit, low pressure difference linear voltage regulator, decoder, level shifting circuit and opposite voltage bias switch nuclear power road, logic level；The output terminal of the band-gap reference circuit is connected to the input terminal of the low pressure difference linear voltage regulator；The output terminal of the low pressure difference linear voltage regulator is respectively connected to the input terminal of the decoder and the level shifting circuit；The output terminal of the decoder is connected to the input terminal of the level shifting circuit；The output terminal of the level shifting circuit is connected to the input terminal on the opposite voltage bias switch nuclear power road.It not comprising negative voltage generator or booster circuit in this patent circuit, therefore reduces the chip area of switch and manufactures cost, it is made to realize good radio-frequency performance in low throw during number switch is applied with low control voltage.
Description
Technical field
The present invention relates to a kind of radio-frequency switch circuits.
Background technology
With the development of mobile communication, intelligent terminal is integrated with 2G/2.5G/3G/3.9G/4G multimode multi-frequencies at present
Communication standard, working frequency range increase 14 to 16.The pass of such multiband and operating mode is supported in mini-plant
One of key elements are radio frequencies（RF）Switch.RF switch configuration categories in intelligent terminal are very extensive, from relatively easy
Single-pole double throw（SPDT）Configuration is thrown until increasingly complex hilted broadsword 16（SP16T）Configuration or even multitool throw configuration more, classify
Including primary antenna switch, diversity switch and band mode switch etc..Past GaAs pHEMT techniques are good due to being capable of providing
Power and linearity performance, be widely used in RF switch design in.But SOI CMOS technologies can be less than+1.8 V
Operating at voltages, and can be neatly on piece integrated CMOS logic circuit, this makes SOI CMOS technologies become current
The RF switch technique of mainstream.
Realize the common circuit structure of SOI CMOS RF switches as shown in Figure 1, including band-gap reference circuit, low pressure at present
Difference linear constant voltage regulator, decoder, level conversion and the switch nuclear power road of generating positive and negative voltage biasing.Particularly, this structure also collects
Into negative voltage generator, it is made of oscillator, non-overlapping clock generation circuit and charge pump, for generating negative voltage（It is logical
It is often -2.0 to -2.5V）.It is thrown with the hilted broadsword two of series and parallel structure（SPDT）Exemplified by switching nuclear power road, generating positive and negative voltage biasing is opened
It is as shown in Figure 2 to close nuclear power road.Control signal VG1 and VG2 synchronization keep one of them for high level (be usually 2.0 to
2.5V), another is low level（Usually -2.0 to -2.5V）.When control signal VG1 is high level, VG2 is low level
When, the first N classes field-effect tube 102 turns on, and the 2nd N classes field-effect tube 112 is ended；When control signal VG1 be low level, VG2
For high level when, the first N classes field-effect tube 102 is ended, and the 2nd N classes field-effect tube 112 turns on.It can be promoted using this structure
Cell voltage is formed the field-effect transistor of switch to control, and so as to reduce the demand to bigger field-effect tube, is improved switch and is inserted
Enter loss and isolation performance, the robustness of enhancing switch compression point.
Second of common circuit structure of SOI CMOS RF switches is realized as shown in figure 3, comprising band-gap reference circuit, low
Pressure difference linear voltage regulator, decoder, level conversion and opposite voltage bias switch nuclear power road.Although this structure no longer collects
Into negative voltage generator, but additional booster circuit is integrated with, for generating high positive pressure voltage（Usually 4.5 to 5.0
V）.It is thrown with the hilted broadsword two of series and parallel structure（SPDT）Exemplified by switching nuclear power road, nuclear power road such as Fig. 4 institutes are switched with respect to voltage bias
Show.Control signal VG1 and VG2 keeps one of them as high level (being usually 4.5 to 5.0 V) in synchronization, another
For low level（Ground connection）.Control signal VD connects fixed positive level（2.0 to 2.5 V）.When VG1 is high level, VG2 is low level
When, the first N classes field-effect tube 202 turns on, and the 2nd N classes field-effect tube 212 is ended；When control signal VG1 be low level, VG2
For high level when, the first N classes field-effect tube 202 is ended, and the 2nd N classes field-effect tube 212 turns on.Using this structure due to simultaneously
Negative voltage generator is not integrated, the complexity of switch designs can be reduced.
The content of the invention
In order to solve the shortcomings of the prior art, the object of the present invention is to provide one kind do not include negative voltage generator or
The SOI CMOS radio-frequency switch circuit structures of person's booster circuit reduce the chip area of switch and manufacture cost, it are made to be thrown low
Number switch（Band mode switching switch and reception diversity switch）Good radio-frequency performance is realized in low control voltage application.
To achieve the above object, the technical solution adopted in the present invention is：
A kind of SOI CMOS radio-frequency switch circuit structures, including band-gap reference circuit, low pressure difference linear voltage regulator, decoding
Device, level shifting circuit and opposite voltage bias switch nuclear power road, logic level are connected to the input terminal of the decoder；For
Electric supply voltage VDD is connected to the input terminal of the band-gap reference circuit；The output terminal of the band-gap reference circuit is connected to institute
The input terminal of low pressure difference linear voltage regulator is stated, operating voltage is provided for low pressure difference linear voltage regulator；The low pressure difference linearity voltage stabilizing
The output terminal of device is respectively connected to the input terminal of the decoder and the level shifting circuit；The output terminal of the decoder connects
It is connected to the input terminal of the level shifting circuit；The output terminal of the level shifting circuit is connected to the opposite voltage bias and opens
Close the input terminal on nuclear power road.The band-gap reference provides a reference voltage, the low pressure for the low pressure difference linear voltage regulator
Difference linear constant voltage regulator then provides power supply for the decoder and the level shifting circuit, and the level shifting circuit is the phase
Bias level is provided to voltage bias switch nuclear power road.
Further, opposite voltage bias switch nuclear power road, including capacitance and N class field-effect tube, utilizes capacitance
DC voltage is obstructed, and direct current biasing is carried out at the same time in the grid and source electrode of N class field-effect tube, when N class field-effect tube is opened
When closing in opening, grid is in high potential, and drain electrode and source electrode are in low potential；At N class fet switches
When off state, grid is in low potential, and drain electrode and source electrode are in high potential.
Further, opposite voltage bias switch nuclear power road, including the first N class field-effect tube, the 2nd N classes field effect
Ying Guan, first resistor, second resistance, 3rd resistor, the 4th resistance, the 5th resistance, the 6th resistance, the first capacitance, the second capacitance,
3rd capacitance, the 4th capacitance, first resistor one end are connected to the grid of the first N class field-effect tube, and the other end is connected to control letter
Number VG1；Second resistance one end is connected to the drain electrode of the first N class field-effect tube, and the other end is connected to the source of the first N class field-effect tube
Pole；3rd resistor one end is connected to the source electrode of the first N class field-effect tube, and the other end is connected to control signal VG2；First capacitance one
End is connected to input terminal In1, and the other end is connected to the drain electrode of the first N class field-effect tube；Second capacitance one end is connected to the first N classes
The source electrode of field-effect tube, the other end are connected to output terminal Out1；4th resistance one end is connected to the grid of the 2nd N class field-effect tube
Pole, the other end are connected to control signal VG2；5th resistance one end is connected to the drain electrode of the 2nd N class field-effect tube, other end connection
To the source electrode of the 2nd N class field-effect tube；6th resistance one end is connected to the source electrode of the 2nd N class field-effect tube, and the other end is connected to
Control signal VG1；3rd capacitance one end is connected to input terminal In1, and the other end is connected to the drain electrode of the 2nd N class field-effect tube；The
Four capacitance one end are connected to the source electrode of the 2nd N class field-effect tube, and the other end is connected to output terminal Out2.
Further, the first N classes field-effect tube and at least one field-effect tube in the 2nd N class field-effect tube
Source electrode and drain electrode can exchange.
Further, opposite voltage bias switch nuclear power road, including the first N class field-effect tube, the 2nd N classes field effect
Ying Guan, the 3rd N class field-effect tube, the 4th N class field-effect tube, first resistor, second resistance, 3rd resistor, the 4th resistance, the 5th
Resistance, the 6th resistance, the 7th resistance, the 8th resistance, the 9th resistance, the tenth resistance, the 11st resistance, the 12nd resistance, first
Capacitance, the second capacitance, the 3rd capacitance, the 4th capacitance, the 5th capacitance, the 6th capacitance, the 7th capacitance, the 8th capacitance, first resistor
One end is connected to the grid of the first N class field-effect tube, and the other end is connected to control signal VG1；Second resistance one end is connected to
The drain electrode of one N class field-effect tube, the other end are connected to the source electrode of the first N class field-effect tube；3rd resistor one end is connected to the first N
The source electrode of class field-effect tube, the other end are connected to control signal VG2；First capacitance one end is connected to input terminal In1, and the other end connects
It is connected to the drain electrode of the first N class field-effect tube；Second capacitance one end is connected to the source electrode of the first N class field-effect tube, other end connection
To output terminal Out1；4th resistance one end is connected to the grid of the 2nd N class field-effect tube, and the other end is connected to control signal
VG2；5th resistance one end is connected to the drain electrode of the 2nd N class field-effect tube, and the other end is connected to the source of the 2nd N class field-effect tube
Pole；6th resistance one end is connected to the source electrode of the 2nd N class field-effect tube, and the other end is connected to control signal VG1；3rd capacitance one
End is connected to input terminal In1, and the other end is connected to the drain electrode of the 2nd N class field-effect tube；4th capacitance one end is connected to the 2nd N classes
The source electrode of field-effect tube, the other end are connected to output terminal Out2；7th resistance one end is connected to the grid of the 3rd N class field-effect tube
Pole, the other end are connected to control signal VG2；8th resistance one end is connected to the drain electrode of the 3rd N class field-effect tube, other end connection
To the source electrode of the 3rd N class field-effect tube；9th resistance one end is connected to the source electrode of the 3rd N class field-effect tube, and the other end is connected to
Control signal VG1；5th capacitance one end is connected to output terminal Out1, and the other end is connected to the drain electrode of the 3rd N class field-effect tube；The
Six capacitance one end are connected to the source electrode of the 3rd N class field-effect tube, and the other end is connected to ground；Tenth resistance one end is connected to the 4th N
The grid of class field-effect tube, the other end are connected to control signal VG1；11st resistance one end is connected to the 4th N class field-effect tube
Drain electrode, the other end is connected to the source electrode of the 4th N class field-effect tube；12nd resistance one end is connected to the 4th N class field-effect tube
Source electrode, the other end is connected to control signal VG2；7th capacitance one end is connected to output terminal Out2, and the other end is connected to the 4th N
The drain electrode of class field-effect tube；8th capacitance one end is connected to the source electrode of the 4th N class field-effect tube, and the other end is connected to ground, works as control
Signal VG1 processed is high level, when VG2 is low level, the first N classes field-effect tube and the conducting of the 4th N classes field-effect tube, and the 2nd N classes
Field-effect tube and the cut-off of the 3rd N classes field-effect tube；When VG1 is low level, and VG2 is high level, the first N classes field-effect tube and the
Four N classes field-effect tube are ended, the 2nd N classes field-effect tube and the conducting of the 3rd N classes field-effect tube.
Further, the first N class field-effect tube, the 2nd N class field-effect tube, the 3rd N class field-effect tube, the 4th N
The source electrode of at least one field-effect tube in class field-effect tube and drain electrode can exchange.
Further, in the control signal VG1 and VG2, one of them is high level, opened switching or
The control of closing, another is low level（Ground connection）.
Further, the high level refers to that voltage is 2.0 to 2.5V.
Beneficial effects of the present invention：
Compared with Fig. 1 prior arts, the present invention enormously simplifies the structure of radio-frequency switch circuit, it is no longer necessary to which negative electricity is pressed into
Row switch control, therefore no longer it is integrated with negative voltage generator（It is by oscillator, non-overlapping clock generation circuit and charge pump structure
Into）, several switches are thrown low（Band mode switching switch and reception diversity switch）Construction of switch will be greatly simplified in, will be reduced
Power consumption and chip area.
Compared with Fig. 2 prior arts, although Fig. 2 prior arts as the present invention, and need not integrate negative voltage generation
Device, any moment only exist that a positive level (another ground connection) is split to put row control into, but Fig. 2 prior arts need it is relatively high
Level (be usually 4.0 to 4.5V), this usually requires additional integrated boost circuit and is realized, and the present invention only needs one
The relatively low positive level of 2.0-2.5V, without integrated boost circuit, so as to reduce power consumption, in the city of current low control voltage
It is with a wide range of applications under the trend of field.
Description of the drawings
The present invention is described in further detail with reference to the accompanying drawings and detailed description：
Fig. 1 is a kind of SOI CMOS RF switch structures of existing integrated negative voltage generator；
Fig. 2 is a kind of generating positive and negative voltage biased witch nuclear power of the SOI CMOS RF switches of existing integrated negative voltage generator
Road；
Fig. 3 is a kind of existing SOI CMOS RF switch structures using booster circuit；
Fig. 4 is that a kind of opposite voltage bias of existing SOI CMOS RF switches using booster circuit switchs nuclear power road；
Fig. 5 is the structure diagram that the present invention is applied to SOI CMOS RF switch structures；
Fig. 6 switchs nuclear power road first embodiment for the opposite voltage bias of the present invention；
Fig. 7 switchs nuclear power road second embodiment for the opposite voltage bias of the present invention.
Specific embodiment
As shown in figure 5, it is steady including band-gap reference, low pressure difference linearity to be applied to SOI CMOS RF switch structures for the present invention
Depressor, decoder, level conversion and opposite voltage bias switch nuclear power road.
Logic level（VC1, VC2..., VCN, N>1）It is connected to the input terminal of the decoder；Power supply voltage VDD connects
It is connected to the input terminal of the band-gap reference；The output terminal of the band-gap reference is connected to the input of the low pressure difference linear voltage regulator
End, operating voltage is provided for it；The output terminal of the low pressure difference linear voltage regulator is respectively connected to the decoder and the electricity
The input terminal of flat conversion circuit；The output terminal of the decoder is connected to the input terminal of the level shifting circuit；The level
The output terminal of conversion circuit is connected to the input terminal on the opposite voltage bias switch nuclear power road.
Wherein, the band-gap reference provides a reference voltage, the low voltage difference line for the low pressure difference linear voltage regulator
Property voltage-stablizer then provide power supply for the decoder and the level shifting circuit, the level shifting circuit is described relatively electric
Biased witch nuclear power road is pressed to provide bias level.
As shown in fig. 6, the opposite voltage bias switch nuclear power road is described further, including the first N class field-effects
Pipe 302, the 2nd N classes field-effect tube 312, first resistor 301, second resistance 303,3rd resistor 305, the 4th resistance 311, the
Five resistance 313, the 6th resistance 315, the first capacitance 304, the second capacitance 306, the 3rd capacitance 314, the 4th capacitance 316.Above-mentioned member
The connection relation of device is as follows：301 one end of first resistor is connected to the grid of the first N classes field-effect tube 302, other end connection
To control signal VG1；303 one end of second resistance is connected to the drain electrode of the first N classes field-effect tube 302, and the other end is connected to the first N
The source electrode of class field-effect tube 302；305 one end of 3rd resistor is connected to the source electrode of the first N classes field-effect tube 302, and the other end connects
It is connected to control signal VG2；First capacitance, 304 one end is connected to input terminal In1, and the other end is connected to the first N class field-effect tube
302 drain electrode；Second capacitance, 306 one end is connected to the source electrode of the first N classes field-effect tube 302, and the other end is connected to output terminal
Out1；4th resistance, 311 one end is connected to the grid of the 2nd N classes field-effect tube 312, and the other end is connected to control signal VG2；
5th resistance, 313 one end is connected to the drain electrode of the 2nd N classes field-effect tube 312, and the other end is connected to the 2nd N class field-effect tube
312 source electrode；6th resistance, 315 one end is connected to the source electrode of the 2nd N classes field-effect tube 312, and the other end is connected to control signal
VG1；3rd capacitance, 314 one end is connected to input terminal In1, and the other end is connected to the drain electrode of the 2nd N classes field-effect tube 312；4th
316 one end of capacitance is connected to the source electrode of the 2nd N classes field-effect tube 312, and the other end is connected to output terminal Out2.Control signal VG1
It is high level (being usually 2.0 to 2.5V) to keep one of them in synchronization with VG2, another is low level（Ground connection）.
When control signal VG1 is high level, and VG2 is low level, the first N classes field-effect tube 302 turns on, the 2nd N class field-effect tube
312 cut-offs；When VG1 is low level, and VG2 is high level, the first N classes field-effect tube 302 is ended, the 2nd N class field-effect tube
312 conductings.
Fig. 7 is the opposite voltage bias switch nuclear power road second embodiment that the present invention is applied to SOI CMOS RF switches,
Including the first N classes field-effect tube 402, the 2nd N classes field-effect tube 412, the 3rd N classes field-effect tube 408, the 4th N class field-effects
Pipe 418, first resistor 401, second resistance 403,3rd resistor 405, the 4th resistance 411, the 5th resistance 413, the 6th resistance
415, the 7th resistance 407, the 8th resistance 409, the 9th resistance 40A, the tenth resistance 417, the 11st resistance 419, the 12nd resistance
41A, the first capacitance 404, the second capacitance 406, the 3rd capacitance 414, the 4th capacitance 416, the 5th capacitance 40C, the 6th capacitance 40E,
7th capacitance 41C, the 8th capacitance 41E.The connection relation of above-mentioned component is as follows：401 one end of first resistor is connected to the first N classes
The grid of field-effect tube 402, the other end are connected to control signal VG1；403 one end of second resistance is connected to the first N class field-effects
The drain electrode of pipe 402, the other end are connected to the source electrode of the first N classes field-effect tube 402；405 one end of 3rd resistor is connected to the first N
The source electrode of class field-effect tube 402, the other end are connected to control signal VG2；First capacitance, 404 one end is connected to input terminal In1,
The other end is connected to the drain electrode of the first N classes field-effect tube 402；Second capacitance, 406 one end is connected to the first N class field-effect tube
402 source electrode, the other end are connected to output terminal Out1；4th resistance, 411 one end is connected to the 2nd N classes field-effect tube 412
Grid, the other end are connected to control signal VG2；5th resistance, 413 one end is connected to the drain electrode of the 2nd N classes field-effect tube 412,
The other end is connected to the source electrode of the 2nd N classes field-effect tube 412；6th resistance, 415 one end is connected to the 2nd N class field-effect tube
412 source electrode, the other end are connected to control signal VG1；3rd capacitance, 414 one end is connected to input terminal In1, and the other end is connected to
The drain electrode of 2nd N classes field-effect tube 412；4th capacitance, 416 one end is connected to the source electrode of the 2nd N classes field-effect tube 412, another
End is connected to output terminal Out2；7th resistance, 407 one end is connected to the grid of the 3rd N classes field-effect tube 408, other end connection
To control signal VG2；8th resistance, 409 one end is connected to the drain electrode of the 3rd N classes field-effect tube 408, and the other end is connected to the 3rd N
The source electrode of class field-effect tube 408；9th resistance 40A one end is connected to the source electrode of the 3rd N classes field-effect tube 408, and the other end connects
It is connected to control signal VG1；5th capacitance 40C one end is connected to output terminal Out1, and the other end is connected to the 3rd N class field-effect tube
408 drain electrode；6th capacitance 40E one end is connected to the source electrode of the 3rd N classes field-effect tube 408, and the other end is connected to ground；Tenth
417 one end of resistance is connected to the grid of the 4th N classes field-effect tube 418, and the other end is connected to control signal VG1；11st resistance
419 one end are connected to the drain electrode of the 4th N classes field-effect tube 418, and the other end is connected to the source electrode of the 4th N classes field-effect tube 418；
12nd resistance 41A one end is connected to the source electrode of the 4th N classes field-effect tube 418, and the other end is connected to control signal VG2；7th
Capacitance 41C one end is connected to output terminal Out2, and the other end is connected to the drain electrode of the 4th N classes field-effect tube 418；8th capacitance 41E
One end is connected to the source electrode of the 4th N classes field-effect tube 418, and the other end is connected to ground.Control signal VG1 and VG2 is in synchronization
Keeping one of them, another is low level for high level (being usually 2.0 to 2.5V)（Ground connection）.When control signal VG1 is
High level, when VG2 is low level, the first N classes field-effect tube 402 and the 4th N classes field-effect tube 418 turn on, the 2nd N classes field effect
Should 412 and the 3rd N classes field-effect tube 408 of pipe end；When VG1 is low level, and VG2 is high level, the first N class field-effect tube
402 and the 4th N classes field-effect tube 418 end, the 2nd N classes field-effect tube 412 and the 3rd N classes field-effect tube 408 turn on.
Operation principle：The main operational principle of technical solution of the present invention is DC isolation Voltage Technique, capacitance 304,306,
314,316 pairs of DC voltages obstruct.When control signal VG1 is high level, and VG2 is low level, the first N class field-effects
The grid of pipe 302 is in high potential, and drain electrode and source electrode are in low potential（Ground state）, the first N classes field-effect tube 302 leads
It is logical, and the grid of the 2nd N classes field-effect tube 312 is in low potential（Ground state）, drain electrode and source electrode are in high potential, the 2nd N
Class field-effect tube 312 is ended；When VG1 is low level, and VG2 is high level, the grid of the first N classes field-effect tube 302 is in
Low potential（Ground state）, drain and source electrode be in high potential, the first N classes field-effect tube 302 is ended, and the 2nd N class field-effects
The grid of pipe 312 is in high potential, and drain electrode and source electrode are in low potential（Ground state）, the 2nd N classes field-effect tube 312 leads
It is logical.
In the description of the present invention, the source electrode of all N classes field-effect tube and drain electrode can exchange, this is for this field
It is understandable for technical staff.
The component value of the value of control signal VG1 and VG2 mentioned in the present invention, all resistance and all capacitances and
The size value of all N classes field-effect tube according to the concrete condition of RF switch, it is necessary to design, this is for those skilled in the art
For be understandable.
In addition, the size of the radio-frequency power born according to required for RF switch, the ruler except adjusting single field-effect tube
It is very little outer, it is also necessary to which that the method for multiple field-effect tube of being connected using lamination is specifically needed how many of lamination, also needed according to specific
The radio-frequency power that bears required in determines.This is equally understandable for those skilled in the art.
Technical solution proposed by the present invention can be easy to expand to the application of single pole multiple throw（As single-pole three throw is opened
Pass, four throw switch of hilted broadsword etc.）With the application of multi-pole, multi-throw switch（Such as five throw switch of double-pole, three knives, four throw switch etc.）.
The technical principle of the present invention is described above in association with specific embodiment.These descriptions are intended merely to explain the present invention's
Principle, and limiting the scope of the invention cannot be construed in any way.Based on explanation herein, the technology of this field
Personnel would not require any inventive effort the other specific embodiments that can associate the present invention, these modes are fallen within
Within protection scope of the present invention.
Claims (1)
1. a kind of SOI CMOS radio-frequency switch circuit structures, it is characterised in that：Including band-gap reference circuit, low pressure difference linearity voltage stabilizing
Device, decoder, level shifting circuit and opposite voltage bias switch nuclear power road, logic level are connected to the defeated of the decoder
Enter end；Power supply voltage VDD is connected to the input terminal of the band-gap reference circuit；The output terminal of the band-gap reference circuit connects
The input terminal of the low pressure difference linear voltage regulator is connected to, operating voltage is provided for low pressure difference linear voltage regulator；The low voltage difference line
The output terminal of property voltage-stablizer is respectively connected to the input terminal of the decoder and the level shifting circuit；The decoder it is defeated
Outlet is connected to the input terminal of the level shifting circuit；The output terminal of the level shifting circuit is connected to the opposite voltage
The input terminal on biased witch nuclear power road；The band-gap reference provides a reference voltage, institute for the low pressure difference linear voltage regulator
It states low pressure difference linear voltage regulator and then provides power supply for the decoder and the level shifting circuit, the level shifting circuit is
The opposite voltage bias switch nuclear power road provides bias level；The opposite voltage bias switch nuclear power road, including capacitance
With N class field-effect tube, DC voltage is obstructed using capacitance, and is carried out at the same time directly in the grid and source electrode of N class field-effect tube
Stream biasing, when N classes fet switch is in opening, grid is in high potential, and drain electrode and source electrode are in low potential；
When N class fet switches are off state, grid is in low potential, and drain electrode and source electrode are in high potential；It is described
Opposite voltage bias switch nuclear power road, including the first N class field-effect tube（302）, the 2nd N class field-effect tube（312）, first
Resistance（301）, second resistance（303）, 3rd resistor（305）, the 4th resistance（311）, the 5th resistance（313）, the 6th resistance
（315）, the first capacitance（304）, the second capacitance（306）, the 3rd capacitance（314）, the 4th capacitance（316）, first resistor（301）One
End is connected to the first N class field-effect tube（302）Grid, the other end is connected to control signal VG1；Second resistance（303）One end
It is connected to the first N class field-effect tube pipes（302）Drain electrode, the other end is connected to the first N class field-effect tube（302）Source electrode；The
Three resistance（305）One end is connected to the first N class field-effect tube（302）Source electrode, the other end is connected to control signal VG2；First
Capacitance（304）One end is connected to input terminal In1, and the other end is connected to the first N class field-effect tube（302）Drain electrode；Second capacitance
（306）One end is connected to the first N class field-effect tube（302）Source electrode, the other end is connected to output terminal Out1；4th resistance
（311）One end is connected to the 2nd N class field-effect tube（312）Grid, the other end is connected to control signal VG2；5th resistance
（313）One end is connected to the 2nd N class field-effect tube（312）Drain electrode, the other end is connected to the 2nd N class field-effect tube（312）'s
Source electrode；6th resistance（315）One end is connected to the 2nd N class field-effect tube（312）Source electrode, the other end is connected to control signal
VG1；3rd capacitance（314）One end is connected to input terminal In1, and the other end is connected to the 2nd N class field-effect tube（312）Drain electrode；
4th capacitance（316）One end is connected to the 2nd N class field-effect tube（312）Source electrode, the other end is connected to output terminal Out2, institute
The first N class field-effect tube stated（302）With the 2nd N class field-effect tube（312）In at least one field-effect tube source electrode and leakage
It can extremely exchange；
Alternatively, the opposite voltage bias switch nuclear power road, including the first N class field-effect tube（402）, the 2nd N class field-effects
Pipe（412）, the 3rd N class field-effect tube（408）, the 4th N class field-effect tube（418）, first resistor（401）, second resistance
（403）, 3rd resistor（405）, the 4th resistance（411）, the 5th resistance（413）, the 6th resistance（415）, the 7th resistance（407）,
8th resistance（409）, the 9th resistance（40A）, the tenth resistance（417）, the 11st resistance（419）, the 12nd resistance（41A）, the
One capacitance（404）, the second capacitance（406）, the 3rd capacitance（414）, the 4th capacitance（416）, the 5th capacitance（40C）, the 6th capacitance
（40E）, the 7th capacitance（41C）, the 8th capacitance（41E）, first resistor（401）One end is connected to the first N class field-effect tube（402）
Grid, the other end is connected to control signal VG1；Second resistance（403）One end is connected to the first N class field-effect tube（402）'s
Drain electrode, the other end are connected to the first N class field-effect tube（402）Source electrode；3rd resistor（405）One end is connected to the first N classes field
Effect pipe（402）Source electrode, the other end is connected to control signal VG2；First capacitance（404）One end is connected to input terminal In1,
The other end is connected to the first N class field-effect tube（402）Drain electrode；Second capacitance（406）One end is connected to the first N class field-effect tube
（402）Source electrode, the other end is connected to output terminal Out1；4th resistance（411）One end is connected to the 2nd N class field-effect tube
（412）Grid, the other end is connected to control signal VG2；5th resistance（413）One end is connected to the 2nd N class field-effect tube
（412）Drain electrode, the other end is connected to the 2nd N class field-effect tube（412）Source electrode；6th resistance（415）One end is connected to
Two N class field-effect tube（412）Source electrode, the other end is connected to control signal VG1；3rd capacitance（414）One end is connected to input
In1 is held, the other end is connected to the 2nd N class field-effect tube（412）Drain electrode；4th capacitance（416）One end is connected to the 2nd N classes
Field-effect tube（412）Source electrode, the other end is connected to output terminal Out2；7th resistance（407）One end is connected to the 3rd N classes field effect
Ying Guan（408）Grid, the other end is connected to control signal VG2；8th resistance（409）One end is connected to the 3rd N class field-effects
Pipe（408）Drain electrode, the other end is connected to the 3rd N class field-effect tube（408）Source electrode；9th resistance（40A）One end is connected to
3rd N class field-effect tube（408）Source electrode, the other end is connected to control signal VG1；5th capacitance（40C）One end is connected to defeated
Outlet Out1, the other end are connected to the 3rd N class field-effect tube（408）Drain electrode；6th capacitance（40E）One end is connected to the 3rd N
Class field-effect tube（408）Source electrode, the other end is connected to ground；Tenth resistance（417）One end is connected to the 4th N class field-effect tube
（418）Grid, the other end is connected to control signal VG1；11st resistance（419）One end is connected to the 4th N class field-effect tube
（418）Drain electrode, the other end is connected to the 4th N class field-effect tube（418）Source electrode；12nd resistance（41A）One end is connected to
4th N class field-effect tube（418）Source electrode, the other end is connected to control signal VG2；7th capacitance（41C）One end is connected to defeated
Outlet Out2, the other end are connected to the 4th N class field-effect tube（418）Drain electrode；8th capacitance（41E）One end is connected to the 4th N
Class field-effect tube（418）Source electrode, the other end be connected to ground, when control signal VG1 be high level, VG2 be low level when, first
N class field-effect tube（402）With the 4th N class field-effect tube（418）Conducting, the 2nd N class field-effect tube（412）It is imitated with the 3rd N classes field
Ying Guan（408）Cut-off；When VG1 is low level, and VG2 is high level, the first N class field-effect tube（402）It is imitated with the 4th N classes field
Ying Guan（418）Cut-off, the 2nd N class field-effect tube（412）With the 3rd N class field-effect tube（408）Conducting, the first N classes
Field-effect tube（402）, the 2nd N class field-effect tube（412）, the 3rd N class field-effect tube（408）, the 4th N class field-effect tube（418）
In at least one field-effect tube source electrode and drain electrode can exchange；In the control signal VG1 and VG2, one of them is
High level, to switch the control being turned on and off, another is low level；The high level refers to that voltage is 2.0
To 2.5V.
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| TWI621006B (en) * | 2017-01-20 | 2018-04-11 | 璟德電子工業股份有限公司 | Regulator circuit having switching function |
| CN106923840A (en) * | 2017-04-10 | 2017-07-07 | 桂林电子科技大学 | Sitting posture detection device for vital signs and system |
| CN106889992A (en) * | 2017-04-10 | 2017-06-27 | 桂林电子科技大学 | Supra-aural detection device for vital signs and system |
| CN111490763B (en) * | 2020-06-24 | 2021-03-02 | 浙江铖昌科技股份有限公司 | Power-resistant field-effect tube switch, switch amplitude limiting chip and radio frequency front-end system |
| CN111884642B (en) * | 2020-08-04 | 2021-10-26 | 西安博瑞集信电子科技有限公司 | Single-chip absorption type single-pole single-throw switch chip |
| CN113765507A (en) * | 2021-09-06 | 2021-12-07 | 芯灵通(天津)科技有限公司 | Radio frequency switch circuit |
| CN216387888U (en) * | 2021-11-03 | 2022-04-26 | 深圳飞骧科技股份有限公司 | Low dropout regulator circuit and radio frequency switch |
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