CN110086456B - SOI CMOS radio frequency switch circuit structure only needing positive voltage bias - Google Patents
SOI CMOS radio frequency switch circuit structure only needing positive voltage bias Download PDFInfo
- Publication number
- CN110086456B CN110086456B CN201910340081.2A CN201910340081A CN110086456B CN 110086456 B CN110086456 B CN 110086456B CN 201910340081 A CN201910340081 A CN 201910340081A CN 110086456 B CN110086456 B CN 110086456B
- Authority
- CN
- China
- Prior art keywords
- transistor
- switch
- resistor
- positive voltage
- radio frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Abstract
The invention discloses an SOICMOS radio frequency switch circuit structure only needing positive voltage bias, which comprises a single-pole X throw switch and a plurality of switch branches; x can take different positive integer values; the switch branch circuit mainly comprises N stacked transistor chains connected in series and N stacked transistor chains connected in parallel; each stacked transistor chain mainly comprises N switching transistors and two auxiliary transistors, wherein N can take different positive integer values; the drain end and the source end of each switching transistor are respectively connected with a resistor in parallel; the drain end and the source end of each auxiliary transistor are respectively connected with a capacitor in parallel; the grid electrode of each switch transistor is respectively connected with a resistor in series and the grid electrode of each auxiliary transistor is respectively connected with a resistor in series and then is connected to a common control signal VG; the source end of the switch transistor at the tail end is connected with a resistor RS and then connected to a public control signal VS; the invention does not need a negative voltage control signal, and only adopts positive voltage to bias the radio frequency switch.
Description
Technical Field
The invention relates to the technical field of radio frequency switches, in particular to an SOICMOS radio frequency switch circuit structure only needing positive voltage bias.
Background
With the continuous development of mobile communication, modern smart phones and tablets typically integrate multiple wireless services using different frequency bands (from FM radio to LTE). Meanwhile, multiple antenna designs are becoming more popular in order to improve sensitivity and avoid crosstalk. These two trends make the micro rf solid-state switch play an increasingly important role in the rf front-end design of smart mobile devices. The soi cmos process has become the most popular process technology for implementing rf switches in recent years due to its important features of high speed, reliability, high degree of integration, and low voltage operation.
The conventional single-pole X-throw SOI CMOS rf switch has a common circuit structure as shown in fig. 1, wherein a stacked transistor technology is usually adopted for improving the voltage endurance capability of the rf switch implemented based on the SOI CMOS process. Depending on the application, X can take different values, such as single pole double throw, single pole eight throw, and single pole fourteen throw switches. Each switch leg is made up of a series stacked transistor path and a parallel stacked transistor path. N represents the number of stacked transistors, and N may take different integer values, e.g., N =2,6,12, etc., depending on the input power requirements to be carried. As shown in fig. 2, each chain of stacked transistors is composed of N switching transistors (M1, M2, \8230;, MN). The drain and source terminals of each switch transistor (M1, M2, \8230;, MN) are respectively connected in parallel with a large resistor (RDS 1, RDS2, \8230;, RDSN), and the gate of each switch transistor is connected with a large resistor (RG 1, RG2, \8230;, RGN) and then connected to a common control signal VG. The prior art typically uses both positive and negative voltages (e.g., 2.5V and-2.5V) for controlling power simultaneously. When VG is positive voltage 2.5V, the transistor is conducted, and the switch is in a closed state; when VG is a negative voltage of-2.5V, the transistor will be turned off and the switch is in an off state. The prior art needs to integrate a charge pump in the rf switch due to the need to provide a control signal of negative voltage, which not only results in increased power consumption and area, but also causes a serious problem of stray transmission signals caused by the charge pump due to the antenna switch being connected to the antenna. In addition, due to the switching characteristics of the charge pump circuit, the on-voltage applied to the switching transistor may fluctuate accordingly, which directly causes noise to be generated in the radio frequency signal.
Disclosure of Invention
The invention aims to provide an SOICMOS radio frequency switch circuit structure which only adopts positive voltage to bias a radio frequency switch and does not need a negative voltage control signal.
The invention is realized by the following technical scheme:
an soi cmos radio frequency switch circuit architecture requiring only positive voltage bias, comprising a single pole X throw switch and a plurality of switch legs; x can take different positive integer values; the switch branch circuit mainly comprises N stacked transistor chains connected in series and N stacked transistor chains connected in parallel; each chain of stacked transistors is mainly composed of N switching transistors (M1, M2, \8230;, MN) and two auxiliary transistors (M11 and M22), N of which may take different positive integer values; the drain end and the source end of each switching transistor are respectively connected with a resistor (RDS 1, RDS2, \8230; RDSN) in parallel; the drain terminal and the source terminal of each auxiliary transistor are respectively connected with a capacitor (CDS 11, CDS 22) in parallel; the grid of each switch transistor is respectively connected with a resistor (RG 1, RG2, \8230;, RGN) in series and the grid of each auxiliary transistor is respectively connected with a resistor (RG 11, RG 22) in series and then connected to a common control signal VG; the source terminal of the switching transistor (MN) at the end is connected to the resistor RS and then to the common control signal VS.
Further, the control signals VG and VS keep one of them at a positive high voltage level (2.5V) and the other at 0V at the same time.
Further, when VG is positive voltage 2.5v and vs is 0V, the switching transistor (M1, M2, \8230;, MN) and the auxiliary transistor (M11 and M22) will be turned on at the same time, equivalent to a small resistance model, with the switch in a closed state.
Further, when VG is 0V and VS is a positive voltage of 2.5V, the switch transistor (M1, M2, \8230; MN) and the auxiliary transistor (M11 and M22) will be turned off at the same time, the switch transistor (M1, M2, \8230; MN) is equivalent to a capacitor connected in parallel with the resistor (RDS 1, RDS2, \8230; RDSN), and the equivalent impedance is very large; the auxiliary transistors (M11 and M22) are equivalent to capacitors connected in parallel with the resistors (RDS 1, RDS2, \ 8230; RDSN), and are equivalent to the effect of DC isolation capacitors, so that the drain end and the source end of each transistor can suspend 2.5V voltage.
Further, the switching transistors (M1, M2, \8230;, MN) are connected in sequence; the auxiliary transistors (M11 and M22) are respectively arranged at two ends of the stacked transistor chain.
The invention has the beneficial effects that:
compared with the conventional single-pole X-throw SOICMOS radio frequency switch, the auxiliary transistor and the grid electrodes of the auxiliary transistor are respectively connected with the resistor RG11 and the resistor RG22 in series, and the drain end and the source end of the auxiliary transistor are respectively connected with the capacitor CDS11 and the capacitor CDS22 in parallel; the SOICMOS radio frequency switch circuit structure without the negative voltage control signal only adopts positive voltage to bias the radio frequency switch. On the one hand, the use of only positive voltage bias can reduce the complexity of the bias wiring and the control circuit. On the other hand, an integrated negative voltage generator is avoided, so that not only can the overall power consumption of the switch be reduced, but also stray transmission signals and RF noise can be obviously reduced. In addition, chip size and manufacturing costs can also be reduced in low throw switch applications.
Drawings
FIG. 1 is a schematic diagram of the overall structure of an embodiment of the present invention;
FIG. 2 is a schematic diagram of a conventional single-pole X-throw SOICMOS RF switch.
Detailed Description
The invention will be described in detail with reference to the drawings and specific embodiments, which are illustrative of the invention and are not to be construed as limiting the invention.
As shown in fig. 1, an soi cmos radio frequency switch circuit architecture requiring only a positive voltage bias includes a single pole X-throw switch and a plurality of switch legs; x can take different positive integer values; the switch branch circuit mainly comprises N stacked transistor chains connected in series and N stacked transistor chains connected in parallel; each chain of stacked transistors is mainly composed of N switching transistors (M1, M2, \8230;, MN) and two auxiliary transistors (M11 and M22), where N may take different positive integer values; the drain end and the source end of each switching transistor are respectively connected with a resistor (RDS 1, RDS2, \8230;, RDSN) in parallel; the drain terminal and the source terminal of each auxiliary transistor are respectively connected with a capacitor (CDS 11, CDS 22) in parallel; the grid of each switch transistor is respectively connected with a resistor (RG 1, RG2, \8230;, RGN) in series and the grid of each auxiliary transistor is respectively connected with a resistor (RG 11, RG 22) in series and then connected to a common control signal VG; the source terminal of the switching transistor (MN) at the end is connected to the resistor RS and then to the common control signal VS.
Specifically, in this embodiment, the control signals VG and VS keep one of them at a positive voltage high level (2.5V) and the other at 0V at the same time.
Specifically, in the embodiment, when VG is a positive voltage of 2.5v and vs is 0V, the switching transistor (M1, M2, \8230;, MN) and the auxiliary transistor (M11 and M22) will be turned on at the same time, which is equivalent to a small resistance model, and the switch is in a closed state.
Specifically, in the scheme of this embodiment, when VG is 0V and vs is a positive voltage of 2.5V, the switching transistor (M1, M2, \8230;, MN) and the auxiliary transistor (M11 and M22) will be turned off at the same time, and the switching transistor (M1, M2, \8230;, MN) is equivalent to a capacitor connected in parallel with the resistor (RDS 1, RDS2, \8230;, RDSN), so that the equivalent impedance is very large; the auxiliary transistors (M11 and M22) are equivalent to capacitors connected in parallel with the resistors (RDS 1, RDS2, \ 8230; RDSN), and are equivalent to the effect of DC isolation capacitors, so that the drain end and the source end of each transistor can suspend 2.5V voltage. Only a positive voltage (2.5V) needs to be used to control the switch on and off.
Specifically, in the scheme of the embodiment, the switching transistors (M1, M2, \ 8230;, MN) are connected in sequence; the auxiliary transistors (M11 and M22) are respectively arranged at two ends of the stacked transistor chain.
In the description of the present invention, the sources and drains of all the switching transistors and the auxiliary transistors are interchangeable.
The values of the control signals VG and VS, the component values of all resistors and all capacitors, and the size values of all switch transistors and auxiliary transistors mentioned in the present invention need to be designed according to the specific situation of the rf switch.
The technical scheme provided by the invention can be easily expanded to the application of a multi-pole multi-throw switch; such as a double pole, five throw switch, a triple pole, four throw switch, etc.
Compared with the conventional single-pole X-throw SOICMOS radio frequency switch, the auxiliary transistor and the grid electrodes of the auxiliary transistor are respectively connected with the resistor RG11 and the resistor RG22 in series, and the drain end and the source end of the auxiliary transistor are respectively connected with the capacitor CDS11 and the capacitor CDS22 in parallel; the SOICMOS radio frequency switch circuit structure does not need a negative voltage control signal, and only adopts positive voltage to bias the radio frequency switch. On the one hand, the use of only positive voltage bias can reduce the complexity of the bias wiring and the control circuit. On the other hand, an integrated negative voltage generator is avoided, so that not only can the overall power consumption of the switch be reduced, but also stray transmission signals and RF noise can be obviously reduced. In addition, chip size and manufacturing costs can also be reduced in low throw switch applications.
The technical solutions provided by the embodiments of the present invention are described in detail above, and the principles and embodiments of the present invention are explained herein by using specific examples, and the descriptions of the embodiments are only used to help understanding the principles of the embodiments of the present invention; meanwhile, for a person skilled in the art, according to the embodiments of the present invention, there may be variations in the specific implementation manners and application ranges, and in summary, the content of the present description should not be construed as a limitation to the present invention.
Claims (5)
1. An soi cmos radio frequency switch circuit configuration requiring only positive voltage bias, comprising: the circuit comprises a single-pole X-throw switch and a plurality of switch branches; x can take different positive integer values; each switch branch consists of a series-connected stacked transistor chain and a parallel-connected stacked transistor chain; each switch branch is connected in series; each chain of stacked transistors is mainly composed of N switching transistors (M1, M2, \8230;, MN) and two auxiliary transistors (M11 and M22), N of which may take different positive integer values; the drain end and the source end of each switching transistor are respectively connected with a resistor (RDS 1, RDS2, \8230;, RDSN) in parallel; the drain terminal and the source terminal of each auxiliary transistor are respectively connected with a capacitor (CDS 11, CDS 22) in parallel; the grid of each switch transistor is respectively connected with a resistor (RG 1, RG2, \8230;, RGN) in series and the grid of each auxiliary transistor is respectively connected with a resistor (RG 11, RG 22) in series and then connected to a common control signal VG; the source terminal of the switching transistor (MN) at the end is connected to the resistor RS and then to the common control signal VS.
2. The soi cmos radio frequency switch circuit configuration requiring only positive voltage bias of claim 1, wherein: the control signals VG and VS keep one of them at a positive high voltage level and the other at 0V at the same time.
3. The soi cmos radio frequency switch circuit configuration requiring only positive voltage bias of claim 2, wherein: when the VG is a positive voltage of 2.5V and the VS is 0V, the switch transistor (M1, M2, \8230;, MN) and the auxiliary transistor (M11 and M22) are simultaneously conducted, which is equivalent to a small resistance model, and the switch is in a closed state.
4. The soi cmos radio frequency switch circuit configuration requiring only positive voltage bias of claim 3, wherein: when VG is 0V and VS is a positive voltage of 2.5V, the switch transistor (M1, M2, \8230; MN) and the auxiliary transistor (M11 and M22) are turned off at the same time, the switch transistor (M1, M2, \8230; MN) is equivalent to a capacitor connected with the resistor (RDS 1, RDS2, \8230; RDSN) in parallel, and the equivalent impedance is very large; the auxiliary transistors (M11 and M22) are equivalent to capacitors connected in parallel with the resistors (RDS 1, RDS2, \ 8230; RDSN), and are equivalent to the effect of DC isolation capacitors, so that the drain end and the source end of each transistor can suspend 2.5V voltage.
5. The soi cmos radio frequency switch circuit configuration requiring only positive voltage bias of claim 1, wherein: the switching transistors (M1, M2, \ 8230;, MN) are connected in sequence; the auxiliary transistors (M11 and M22) are respectively arranged at two ends of the stacked transistor chain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910340081.2A CN110086456B (en) | 2019-04-25 | 2019-04-25 | SOI CMOS radio frequency switch circuit structure only needing positive voltage bias |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910340081.2A CN110086456B (en) | 2019-04-25 | 2019-04-25 | SOI CMOS radio frequency switch circuit structure only needing positive voltage bias |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110086456A CN110086456A (en) | 2019-08-02 |
| CN110086456B true CN110086456B (en) | 2023-03-24 |
Family
ID=67416815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910340081.2A Active CN110086456B (en) | 2019-04-25 | 2019-04-25 | SOI CMOS radio frequency switch circuit structure only needing positive voltage bias |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110086456B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110929420B (en) * | 2019-12-04 | 2023-07-11 | 上海华虹宏力半导体制造有限公司 | Simulation method and device of CMOS radio frequency switch and communication terminal |
| CN113472329A (en) * | 2021-08-24 | 2021-10-01 | 上海迦美信芯通讯技术有限公司 | Radio frequency switch circuit for optimizing voltage withstanding uniformity of stacked switch tubes |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104682936A (en) * | 2015-02-04 | 2015-06-03 | 广东工业大学 | CMOS SOI (Complementary Metal-Oxide-Semiconductor Transistor Silicon On Insulator) radio frequency switch structure with body region self-adapted bias function |
| CN105322933A (en) * | 2014-06-03 | 2016-02-10 | 英飞凌科技股份有限公司 | System and Method for a Radio Frequency Switch |
| CN106230419A (en) * | 2016-07-27 | 2016-12-14 | 上海华虹宏力半导体制造有限公司 | SOI RF switch structure and integrated circuit |
| CN106972845A (en) * | 2017-04-07 | 2017-07-21 | 广东工业大学 | A kind of radio-frequency switch circuit |
| CN109088626A (en) * | 2018-07-21 | 2018-12-25 | 安徽矽磊电子科技有限公司 | A kind of RF switch of super low-power consumption biasing |
| CN109274358A (en) * | 2017-07-18 | 2019-01-25 | 锐迪科微电子科技（上海）有限公司 | A kind of SOI CMOS RF switch and radio frequency receiving and transmitting front end, mobile terminal |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150171860A1 (en) * | 2013-11-13 | 2015-06-18 | Skyworks Solutions, Inc. | Circuits and methods for improved quality factor in a stack of transistors |
-
2019
- 2019-04-25 CN CN201910340081.2A patent/CN110086456B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322933A (en) * | 2014-06-03 | 2016-02-10 | 英飞凌科技股份有限公司 | System and Method for a Radio Frequency Switch |
| CN104682936A (en) * | 2015-02-04 | 2015-06-03 | 广东工业大学 | CMOS SOI (Complementary Metal-Oxide-Semiconductor Transistor Silicon On Insulator) radio frequency switch structure with body region self-adapted bias function |
| CN106230419A (en) * | 2016-07-27 | 2016-12-14 | 上海华虹宏力半导体制造有限公司 | SOI RF switch structure and integrated circuit |
| CN106972845A (en) * | 2017-04-07 | 2017-07-21 | 广东工业大学 | A kind of radio-frequency switch circuit |
| CN109274358A (en) * | 2017-07-18 | 2019-01-25 | 锐迪科微电子科技（上海）有限公司 | A kind of SOI CMOS RF switch and radio frequency receiving and transmitting front end, mobile terminal |
| CN109088626A (en) * | 2018-07-21 | 2018-12-25 | 安徽矽磊电子科技有限公司 | A kind of RF switch of super low-power consumption biasing |
Non-Patent Citations (1)
| Title |
|---|
| 基于RF SOI CMOS工艺高线性低功耗LNA设计;何全等;《电子设计工程》;20170905(第17期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110086456A (en) | 2019-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109088626B (en) | Ultralow-power-consumption biased radio frequency switch | |
| CN102185594B (en) | Single pole multi throw switch | |
| KR101409122B1 (en) | High-frequency switching device with reduced harmonics | |
| US20060119451A1 (en) | Switching circuits | |
| US9293797B2 (en) | RF switch with transformer and switching method thereof | |
| KR101301209B1 (en) | CMOS switch for use in radio frequency switching and isolation enhancement method | |
| WO2017092682A1 (en) | Multipath switch circuit, chip and communication terminal | |
| US6774701B1 (en) | Method and apparatus for electronic switching with low insertion loss and high isolation | |
| KR20150114910A (en) | System and method for driving a radio frequency switch | |
| CN110086456B (en) | SOI CMOS radio frequency switch circuit structure only needing positive voltage bias | |
| JP5997624B2 (en) | High frequency semiconductor switch and radio equipment | |
| KR101301213B1 (en) | SPDT switch for use in radio frequency switching and isolation enhancement method | |
| JP2011055129A (en) | Semiconductor switch | |
| TWI536738B (en) | Rf switch with complementary switching devices | |
| CN105049016B (en) | The single-pole double throw RF switch and hilted broadsword of single-pole single-throw(SPST RF switch and its composition throw RF switch more | |
| CN113472329A (en) | Radio frequency switch circuit for optimizing voltage withstanding uniformity of stacked switch tubes | |
| CN110719092A (en) | Radio frequency switch circuit structure | |
| CN109194291A (en) | A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality | |
| CN113572467A (en) | Radio frequency switch circuit for improving harmonic wave | |
| CN111342829B (en) | Broadband radio frequency switch and switching method thereof, switch module and circuit module | |
| US10340704B2 (en) | Switch device with a wide bandwidth | |
| CN116979942A (en) | Antenna tuning switch circuit | |
| CN112511116A (en) | Wideband CMOS power amplifier capable of reconstructing interstage matching | |
| TWI430315B (en) | Double pole double throw swith device | |
| CN215773068U (en) | Radio frequency switch circuit for optimizing voltage withstanding uniformity of stacked switch tubes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |