CN110086456A - A kind of SOI CMOS radio-frequency switch circuit structure only needing positive voltage bias - Google Patents
A kind of SOI CMOS radio-frequency switch circuit structure only needing positive voltage bias Download PDFInfo
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- CN110086456A CN110086456A CN201910340081.2A CN201910340081A CN110086456A CN 110086456 A CN110086456 A CN 110086456A CN 201910340081 A CN201910340081 A CN 201910340081A CN 110086456 A CN110086456 A CN 110086456A
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- switching transistor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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Abstract
The invention discloses the SOICMOS radio-frequency switch circuit structures that one kind only needs positive voltage bias, including hilted broadsword X throw switch and multiple switch branch；Its X can take different positive integer values；The switching branches are mainly made of the stacked transistors chain of N number of concatenated stacked transistors chain and N number of parallel connection；Each stacked transistors chain is mainly made of N number of switching transistor and two auxiliary transistors, and N can take different positive integer values；The drain terminal and source of each switching transistor are connected in parallel a resistance respectively；The drain terminal and source of each auxiliary transistor are connected in parallel a capacitor respectively；The grid that resistance and each auxiliary transistor is connected in series in the grid of each switching transistor respectively is connected at public control signal VG after resistance is connected in series respectively；It is connected at public control signal VS after the source connection resistance RS of the switching transistor of end；The present invention does not need negative voltage control signal, is biased only with positive voltage to RF switch.
Description
Technical field
The present invention relates to RF switch technical fields, and one kind only needs the SOICMOS radio frequency of positive voltage bias in particular
Switching circuit structure.
Background technique
With the continuous development of mobile communication, modern smart phone and plate computer expert are often integrated with using different frequency bands
The multinomial wireless service of (from FM radio to LTE).Meanwhile in order to improve sensibility and avoid cross-talk, multiple antenna design is more next
It is more popular.It is increasingly heavier that both trend play the part of miniature radio-frequency solid-state switch in the radio-frequency front-end design of Intelligent mobile equipment
The role wanted.SOICMOS technique due to have high speed, it is reliable, can the important features such as highly integrated and low voltage operating, in recent years
Have become for realizing the technology of RF switch most mainstream.
The RF switch realized based on SOI CMOS technology generallys use stacked transistors technology to improve voltage endurance capability,
It is as shown in Figure 1 that existing hilted broadsword X throws SOICMOS RF switch common circuit structure.According to the difference of application, X can be taken
Different values, such as single-pole double throw, hilted broadsword eight are thrown with 14 throw switch of hilted broadsword etc..Each switching branches are by concatenated stacking crystal
Pipe access and stacked transistors access in parallel composition.N represents the transistor number of stacking, the input power carried as needed
Requirement, N can take different integer values, such as N=2,6,12 etc..As shown in Fig. 2, each stacked transistors chain is opened by N number of
Close transistor (M1, M2 ..., MN) composition.The leakage of each switching transistor (M1, M2 ..., MN) and source one in parallel respectively
Big resistance (RDS1, RDS2 ..., RDSN), the grid of each switching transistor respectively connected one big resistance (RG1,
RG2 ..., RGN) after be connected at public control signal VG.Existing technology generally use positive voltage and negative voltage (such as
2.5V and -2.5V) control power supply is carried out simultaneously.When VG is positive voltage 2.5V, transistor will be connected, and switch is in closed form
State；When VG is negative voltage -2.5V, transistor will end, and switch in an off state.Existing technology is negative due to needing to provide
The control signal of voltage, it is necessary to which integrated charge pumps in RF switch, this not only results in the increase of power consumption and area, Er Qieyou
It is connected to antenna in duplexer, spurious emissions signal caused by charge pump can become a serious problem.Further, since electric
Therefore the switching characteristic of lotus pump circuit, the conducting voltage for being applied to switching transistor can fluctuate, this can directly result in radiofrequency signal
Generate noise.
Summary of the invention
The purpose of the present invention is to provide one kind to be biased RF switch only with positive voltage, and it is voltage-controlled not need negative electricity
The SOICMOS radio-frequency switch circuit structure of signal processed.
What the invention is realized by the following technical scheme:
A kind of SOICMOS radio-frequency switch circuit structure only needing positive voltage bias, including hilted broadsword X throw switch and multiple open
Close branch；Its X can take different positive integer values；The switching branches are mainly by N concatenated stacked transistors chains and N number of
Stacked transistors chain composition in parallel；Each stacked transistors chain is mainly by N number of switching transistor (M1, M2 ..., MN) and two
Auxiliary transistor (M11 and M22) composition, N can take different positive integer values；The drain terminal and source of each switching transistor
It is connected in parallel a resistance (RDS1, RDS2 ..., RDSN) respectively；The drain terminal and source of each auxiliary transistor are in parallel respectively to be connected
Connect a capacitor (CDS11, CDS22)；Resistance (RG1, RG2 ..., RGN) is connected in series in the grid of each switching transistor respectively
It is connected in series respectively with the grid of each auxiliary transistor and is connected to public control signal VG after resistance (RG11, RG22)
Place；It is connected at public control signal VS after the source connection resistance RS of the switching transistor (MN) of end.
Further, the control signal VG and VS keeps one of them for positive voltage high level in synchronization
(2.5V), another is 0V.
Further, the VG is positive voltage 2.5V, when VS is 0V, the switching transistor (M1, M2 ..., MN) and institute
Stating auxiliary transistor (M11 and M22) will simultaneously turn on, and be equivalent to small Resistance model for prediction, and switch is in closed state.
Further, the VG is 0V, when VS is positive voltage 2.5V, the switching transistor (M1, M2 ..., MN) and institute
Stating auxiliary transistor (M11 and M22) will end simultaneously, the switching transistor (M1, M2 ..., MN) be equivalent to capacitor with it is described
Resistance (RDS1, RDS2 ..., RDSN) is in parallel, and equivalent impedance is very big；The auxiliary transistor (M11 and M22) is equivalent to capacitor
With the resistance (RDS1, RDS2 ... RDSN) parallel connection, it is equivalent to the effect of DC isolation capacitance, so that each transistor
Drain terminal and source can suspend the voltage of 2.5V.
Further, the switching transistor (M1, M2 ..., MN) is sequentially connected；The auxiliary transistor (M11 and M22)
It is respectively arranged at stacked transistors chain both ends.
Beneficial effects of the present invention:
The present invention is brilliant by setting auxiliary transistor and auxiliary compared with existing hilted broadsword X throws SOICMOS RF switch
Resistance RG11, resistance RG22 is connected in series in the grid of body pipe respectively, and the drain terminal and source of auxiliary transistor are connected in parallel one respectively
A capacitor CDS11, capacitor CDS22；The SOICMOS radio-frequency switch circuit structure for not needing negative voltage control signal, only with just
Voltage is biased RF switch.On the one hand, biasing line and control electricity be can reduce in this way only with positive voltage bias
The complexity on road.On the other hand, integrated negative voltage generator is avoided, can not only reduce switch overall power, but also spuious
Emitting signal and RF noise will significantly reduce.In addition, it is low throw can also be reduced in several switch applications chip size and manufacture at
This.
Detailed description of the invention
Fig. 1 is overall structure diagram of the embodiment of the present invention；
Fig. 2 is that existing hilted broadsword X throws SOICMOS RF switch structure schematic diagram.
Specific embodiment
Below in conjunction with attached drawing and specific embodiment, the present invention will be described in detail, below will herein with signal of the invention
In conjunction with attached drawing and specific embodiment, the present invention will be described in detail, is used to solve with illustrative examples and explanation of the invention herein
The present invention is released, but not as a limitation of the invention.
As shown in Figure 1, a kind of SOICMOS radio-frequency switch circuit structure for only needing positive voltage bias, including hilted broadsword X are thrown out
It closes and multiple switch branch；Its X can take different positive integer values；The switching branches are mainly by N number of concatenated stacking crystal
Pipe chain and the stacked transistors chain of N number of parallel connection composition；Each stacked transistors chain mainly by N number of switching transistor (M1, M2 ...,
MN) and two auxiliary transistor (M11 and M22) compositions, N can take different positive integer values；The leakage of each switching transistor
End and source are connected in parallel a resistance (RDS1, RDS2 ..., RDSN) respectively；The drain terminal and source of each auxiliary transistor point
It is not connected in parallel a capacitor (CDS11, CDS22)；The grid of each switching transistor be connected in series respectively resistance (RG1,
RG2 ..., RGN) and each auxiliary transistor grid be connected in series after resistance (RG11, RG22) respectively be connected to it is public
It controls at signal VG；Public control signal VS is connected to after the source connection resistance RS of the switching transistor (MN) of end
Place.
Specifically, the control signal VG and VS keeps one of them for positive electricity in synchronization in this embodiment scheme
It presses high level (2.5V), another is 0V.
Specifically, in this embodiment scheme, the VG is positive voltage 2.5V, when VS is 0V, the switching transistor (M1,
M2 ..., MN) and the auxiliary transistor (M11 and M22) will simultaneously turn on, be equivalent to small Resistance model for prediction, switch is in closed form
State.
Specifically, in this embodiment scheme, the VG is 0V, when VS is positive voltage 2.5V, the switching transistor (M1,
M2 ..., MN) and the auxiliary transistor (M11 and M22) will end simultaneously, the switching transistor (M1, M2 ..., MN) is equivalent
In parallel for capacitor and the resistance (RDS1, RDS2 ..., RDSN), equivalent impedance is very big；The auxiliary transistor (M11 and
M22 it) is equivalent to capacitor and the resistance (RDS1, RDS2 ... RDSN) is in parallel, the effect of DC isolation capacitance is equivalent to, to make
Each transistor drain terminal and source can suspend the voltage of 2.5V.It only needs using positive voltage (2.5V) control switch
Closure and shutdown.
Specifically, the switching transistor (M1, M2 ..., MN) is sequentially connected in this embodiment scheme；The auxiliary is brilliant
Body pipe (M11 and M22) is respectively arranged at stacked transistors chain both ends.
In description of the invention, the source electrode and drain electrode of all switching transistors and auxiliary transistor be can be interchanged.
The value of control signal VG and VS mentioned in the present invention, the component value of all resistance and all capacitors, Yi Jisuo
There is the size value of switching transistor and auxiliary transistor, needs to be designed according to the concrete condition of RF switch.
Technical solution proposed by the present invention can be easy to expand to the application of multi-pole, multi-throw switch；As double-pole five is thrown out
It closes, three knives, four throw switch etc..
The present invention is brilliant by setting auxiliary transistor and auxiliary compared with existing hilted broadsword X throws SOICMOS RF switch
Resistance RG11, resistance RG22 is connected in series in the grid of body pipe respectively, and the drain terminal and source of auxiliary transistor are connected in parallel one respectively
A capacitor CDS11, capacitor CDS22；The SOICMOS radio-frequency switch circuit structure for not needing negative voltage control signal, only with just
Voltage is biased RF switch.On the one hand, biasing line and control electricity be can reduce in this way only with positive voltage bias
The complexity on road.On the other hand, integrated negative voltage generator is avoided, can not only reduce switch overall power, but also spuious
Emitting signal and RF noise will significantly reduce.In addition, it is low throw can also be reduced in several switch applications chip size and manufacture at
This.
It is provided for the embodiments of the invention technical solution above to be described in detail, specific case used herein
The principle and embodiment of the embodiment of the present invention are expounded, the explanation of above embodiments is only applicable to help to understand this
The principle of inventive embodiments；At the same time, for those skilled in the art, according to an embodiment of the present invention, in specific embodiment party
There will be changes in formula and application range, in conclusion the contents of this specification are not to be construed as limiting the invention.
Claims (5)
1. the SOICMOS radio-frequency switch circuit structure that one kind only needs positive voltage bias, it is characterised in that: thrown out including hilted broadsword X
It closes and multiple switch branch；Its X can take different positive integer values；The switching branches are mainly by N number of concatenated stacking crystal
Pipe chain and the stacked transistors chain of N number of parallel connection composition；Each stacked transistors chain mainly by N number of switching transistor (M1, M2 ...,
MN) and two auxiliary transistor (M11 and M22) compositions, N can take different positive integer values；The leakage of each switching transistor
End and source are connected in parallel a resistance (RDS1, RDS2 ..., RDSN) respectively；The drain terminal and source of each auxiliary transistor point
It is not connected in parallel a capacitor (CDS11, CDS22)；The grid of each switching transistor be connected in series respectively resistance (RG1,
RG2 ..., RGN) and each auxiliary transistor grid be connected in series after resistance (RG11, RG22) respectively be connected to it is public
It controls at signal VG；Public control signal VS is connected to after the source connection resistance RS of the switching transistor (MN) of end
Place.
2. one kind according to claim 1 only needs the SOICMOS radio-frequency switch circuit structure of positive voltage bias, feature
Be: the control signal VG and VS keeps one of them for positive voltage high level in synchronization, another is 0V.
3. one kind according to claim 2 only needs the SOICMOS radio-frequency switch circuit structure of positive voltage bias, feature
Be: the VG is positive voltage 2.5V, when VS is 0V, the switching transistor (M1, M2 ..., MN) and the auxiliary transistor
(M11 and M22) will be simultaneously turned on, and be equivalent to small Resistance model for prediction, and switch is in closed state.
4. one kind according to claim 3 only needs the SOICMOS radio-frequency switch circuit structure of positive voltage bias, feature
Be: the VG is 0V, when VS is positive voltage 2.5V, the switching transistor (M1, M2 ..., MN) and the auxiliary transistor
(M11 and M22) will end simultaneously, the switching transistor (M1, M2 ..., MN) be equivalent to capacitor and the resistance (RDS1,
RDS2 ..., RDSN) it is in parallel, equivalent impedance is very big；The auxiliary transistor (M11 and M22) is equivalent to capacitor and the resistance
(RDS1, RDS2 ... RDSN) is in parallel, the effect of DC isolation capacitance is equivalent to, so that the drain terminal and source of each transistor
Can suspend the voltage of 2.5V.
5. one kind according to claim 1 only needs the SOICMOS radio-frequency switch circuit structure of positive voltage bias, feature
Be: the switching transistor (M1, M2 ..., MN) is sequentially connected；The auxiliary transistor (M11 and M22) is respectively arranged at institute
State stacked transistors chain both ends.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910340081.2A CN110086456B (en) | 2019-04-25 | 2019-04-25 | SOI CMOS radio frequency switch circuit structure only needing positive voltage bias |
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| CN201910340081.2A CN110086456B (en) | 2019-04-25 | 2019-04-25 | SOI CMOS radio frequency switch circuit structure only needing positive voltage bias |
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| CN110086456B CN110086456B (en) | 2023-03-24 |
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Cited By (2)
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| CN110929420A (en) * | 2019-12-04 | 2020-03-27 | 上海华虹宏力半导体制造有限公司 | Simulation method and device of CMOS radio frequency switch and communication terminal |
| CN113472329A (en) * | 2021-08-24 | 2021-10-01 | 上海迦美信芯通讯技术有限公司 | Radio frequency switch circuit for optimizing voltage withstanding uniformity of stacked switch tubes |
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| CN113472329A (en) * | 2021-08-24 | 2021-10-01 | 上海迦美信芯通讯技术有限公司 | Radio frequency switch circuit for optimizing voltage withstanding uniformity of stacked switch tubes |
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