CN106972845A - A kind of radio-frequency switch circuit - Google Patents
A kind of radio-frequency switch circuit Download PDFInfo
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- CN106972845A CN106972845A CN201710225103.1A CN201710225103A CN106972845A CN 106972845 A CN106972845 A CN 106972845A CN 201710225103 A CN201710225103 A CN 201710225103A CN 106972845 A CN106972845 A CN 106972845A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Abstract
The invention discloses a kind of radio-frequency switch circuit, including multiple radio-frequency signal paths, each radio-frequency signal path includes series arm and parallel branch, and each parallel branch includes the MOS transistor of N number of stacking；Each parallel branch also includes：The N number of gate connected in parallel resistance being connected respectively with N number of MOS transistor grid；One end is connected with least one gate connected in parallel resistance, the M biasing resistor that the other end is connected with shunt control signal；It can be seen that, each gate connected in parallel resistance in parallel branch is further same after being connected with biasing resistor to be connected to control signal port, uneven distribution of the big voltage swing on the MOS transistor that each is stacked can effectively be improved, each pipe is allowed to bear than more uniform voltage swing, so as to prevent the pipe on stacked transistors chain top from taking the lead in breakdown, and the deterioration of the switch harmonic on pipe caused by big voltage swing is prevented, further increase the power handling capability and the linearity of RF switch.
Description
Technical field
The present invention relates to technical field of radio frequency integrated circuits, more specifically to a kind of radio-frequency switch circuit.
Background technology
With the continuous evolution of mobile terminal version and adopting for WCDMA and 3GPP LTE standards, current cellular communication work
14 or 16 are had been added to as frequency range, such multiband and mode of operation, radio frequency (RF) are supported in mobile mini-plant
Switch plays more and more important effect, particularly primary antenna and switched.But primary antenna switch generally comprises GSM and 3G./4G etc.
Frequency range path, size is maximum, complexity highest, and power handling capability also requires that it will at least possess+36dBm GSM Tx most by force
Power capacity, if it is considered that circuit loss and antenna mismatch, power handling capability should reach+40dBm (10W).Consider in addition
The wave-shape amplitude excursion that these complicated modulation schemes such as OFDM (OFDMA) are produced is very big, therefore signal
With very high peak-to-average force ratio (PAPR), this requires that handling their RF switch has the outstanding linearity, so as to greatest extent
Distortion in ground reduction RF signal path.Due to the advantage of the highly integrated high reliability of low-power consumption, the radio frequency based on silicon substrate is opened
Guan Gao, which is thrown, has some superiority in several switch applications.The drain-source breakdown voltage of transistor in view of being made by silicon materials only has
3.0~4.0V, SOI (SOI) the CMOS RF switches of current main-stream generally use stacked transistors (stacked-FETs) skill
Art improves the power handling capability of switch.
As shown in figure 1, each path in radio-frequency switch circuit is generally by a series arm and a parallel connection at present
Branch road is constituted, and each series arm and parallel branch are stacked by one or more N-type MOS transistors and constituted, wherein each crystal
The grid of pipe is all connected with a resistance Rg respectively.However, because there is many places parasitic capacitance effect and grid electricity in MOS transistor
Resistance Rg can not block radiofrequency signal completely, and total radio-frequency voltage amplitude of oscillation will be unevenly distributed on each MOS transistor.
The effect of this voltage swing uneven distribution is also relevant with pipe sizing, and pipe sizing is smaller, voltage swing uneven distribution
Phenomenon it is more serious.For RF switch, in order to obtain relatively low insertion loss, the pipe sizing of usual series arm compared with
Greatly, the uneven Distribution Phenomena of the voltage swing of the transistor chains of series arm is not serious；But in parallel branch pipe chi
Very little generally smaller, 1st/1st to seven/5th of pipe sizing generally in series arm, when parallel branch is in OFF state
When, the top pipe of stacked transistors chain bears the voltage swing of maximum, and bottom pipe bears the voltage swing of minimum, is distributed in
Voltage swing on each transistor is sequentially reduced from the top of stacked transistors chain to bottom.On the one hand, top transistor will
Breakdown voltage is reached first, limits the maximal input that RF switch can be handled；On the other hand, with larger voltage swing
The MOS transistor of width will contribute bigger higher hamonic wave, so as to reduce the overall linearity of RF switch.Traditional solution party
Method is the quantity of increase series connection and parallel branch stacked transistors, and its cost is to produce bigger insertion loss and take bigger
Chip area.
Therefore, how to make the radio-frequency voltage amplitude of oscillation try one's best to be evenly distributed on each MOS transistor, improve the power of switch
Disposal ability and the linearity, while prevent that the MOS transistor on stacked transistors chain top is breakdown first under big voltage swing,
The higher RF switch of reliability is realized, is the problem of those skilled in the art need solution.
The content of the invention
It is an object of the invention to provide a kind of radio-frequency switch circuit, to realize the power handling capability and line that improve switch
Property degree, while preventing that the MOS transistor on stacked transistors chain top is breakdown first under big voltage swing, realizes reliability more
High RF switch.
To achieve the above object, the embodiments of the invention provide following technical scheme：
A kind of radio-frequency switch circuit, including multiple radio-frequency signal paths, each radio-frequency signal path include series arm and
Parallel branch, each parallel branch includes the MOS transistor of N number of stacking；Wherein, N is the positive integer more than 1；Each branch in parallel
Road also includes：
The N number of gate connected in parallel resistance being connected respectively with N number of MOS transistor grid；
One end is connected with least one gate connected in parallel resistance, the M biasing resistor that the other end is connected with shunt control signal；
Wherein, M is the positive integer more than 1 and less than N.
Wherein, when M is 2, each parallel branch includes：
The N number of gate connected in parallel resistance being connected respectively with N number of MOS transistor grid；
One end is connected with preceding K gate connected in parallel resistance, the first biasing resistor that the other end is connected with shunt control signal；Its
In, K is the positive integer more than 1 and less than N；
One end is connected with rear N-K gate connected in parallel resistance, the second biasing resistor that the other end is connected with shunt control signal.
Wherein, one end of the series arm in each radio-frequency signal path is connected with antenna port, and the other end is believed with radio frequency
Number port is connected；Parallel branch one end in each radio-frequency signal path is connected with radiofrequency signal port, the other end and earth terminal
It is connected.
Wherein, the series arm in each radio-frequency signal path includes：
The MOS transistor of N number of stacking；
One end is connected with the grid of N number of MOS transistor, N number of gate series that the other end is connected with series connection control signal
Resistance.
Wherein, the MOS transistor in each parallel branch is N-type transistor.
Wherein, the MOS transistor in each series arm is N-type transistor.
Wherein, in each radio-frequency signal path, shunt control signal and series connection control signal are only kept in synchronization
One of be high level.
Wherein, when target radio frequency signal path is opened, the series connection control signal of the target radio frequency signal path is height
Level, the shunt control signal of the target radio frequency signal path is low level；In addition to the target radio frequency signal path
In other radio-frequency signal paths, series connection control signal is low level, and shunt control signal is high level.
By above scheme, a kind of radio-frequency switch circuit provided in an embodiment of the present invention, including multiple radiofrequency signals
Path, each radio-frequency signal path includes series arm and parallel branch, and each parallel branch includes the MOS crystal of N number of stacking
Pipe；Wherein, N is the positive integer more than 1；Each parallel branch also includes：The N number of grid being connected respectively with N number of MOS transistor grid
Pole parallel resistance；One end is connected with least one gate connected in parallel resistance, the M biased electrical that the other end is connected with shunt control signal
Resistance；Wherein, M is the positive integer more than 1 and less than N.It can be seen that, in this programme, each gate connected in parallel resistance in parallel branch
It is another with control signal port is connected to after being connected with biasing resistor, it can effectively improve big voltage swing at each
Uneven distribution on the MOS transistor of stacking, allows each pipe to bear than more uniform voltage swing, so as to prevent from stacking
The pipe on transistor chains top takes the lead in breakdown, and prevents the deterioration of the switch harmonic on pipe caused by big voltage swing,
Further increase the power handling capability and the linearity of RF switch.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is RF switch structure circuit diagram in the prior art；
Fig. 2 is the voltage swing simulation curve schematic diagram that each transistor of RF switch structure is born in the prior art；
Fig. 3 is the circuit diagram of RF switch embodiment disclosed in the embodiment of the present invention；
Fig. 4 is that the voltage swing simulation curve that each transistor of a RF switch structure disclosed in the embodiment of the present invention is born shows
It is intended to；
Fig. 5 is a RF switch structure disclosed in the embodiment of the present invention and each transistor of RF switch structure in the prior art
The maximum voltage amplitude simulation comparison curve synoptic diagram born；
Fig. 6 is a RF switch structure disclosed in the embodiment of the present invention and RF switch structure insertion loss in the prior art
The simulation comparison curve synoptic diagram of vs input powers；
Fig. 7 is a RF switch structure disclosed in the embodiment of the present invention and RF switch structure second harmonic in the prior art
The simulation comparison curve synoptic diagram of vs input powers；
Fig. 8 is a RF switch structure disclosed in the embodiment of the present invention and RF switch structure triple-frequency harmonics in the prior art
The simulation comparison curve synoptic diagram of vs input powers.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
The embodiment of the invention discloses a kind of radio-frequency switch circuit, the power handling capability of switch is improved and linear to realize
Degree, while preventing that the MOS transistor on stacked transistors chain top is breakdown first under big voltage swing, realizes that reliability is higher
RF switch.
A kind of radio-frequency switch circuit provided in an embodiment of the present invention, including multiple radio-frequency signal paths, each radiofrequency signal
Path includes series arm and parallel branch, and each parallel branch includes the MOS transistor of N number of stacking；Wherein, N is more than 1
Positive integer；Each parallel branch also includes：
The N number of gate connected in parallel resistance being connected respectively with N number of MOS transistor grid；
One end is connected with least one gate connected in parallel resistance, the M biasing resistor that the other end is connected with shunt control signal；
Wherein, M is the positive integer more than 1 and less than N.
Wherein, one end of the series arm in each radio-frequency signal path is connected with antenna port, and the other end is believed with radio frequency
Number port is connected；Parallel branch one end in each radio-frequency signal path is connected with radiofrequency signal port, the other end and earth terminal
It is connected.
Wherein, the series arm in each radio-frequency signal path includes：
The MOS transistor of N number of stacking；
One end is connected with the grid of N number of MOS transistor, N number of gate series that the other end is connected with series connection control signal
Resistance.
Specifically, referring to Fig. 1, the existing RF switch structure circuit diagram provided for the present embodiment, it can be seen that radio frequency is opened
Radio-frequency signal path in powered-down road is made up of a series arm and a parallel branch；For example：The one end of series arm 1 with
RF1 radiofrequency signals port is connected, and the other end is connected with antenna port ANT；The one end of parallel branch 1 and RF1 radiofrequency signals port phase
Even, the other end is connected to the ground；The connection of other radio frequency paths (RF2, RF3 ..., RFN) is identical with RF1 paths.Also, according to not
With the demand of application different capacity capacity, series arm and parallel branch are stacked by one or more N-type MOS transistors and constituted,
The grid of wherein each transistor is connected with a resistance Rg respectively.
The grid of the N number of N-type MOS transistor (M1, M2 ..., MN) stacked in series arm 1 is all connected with a grid respectively
Resistance Rg is connected, and the other end of the grid series resistance Rg in all series arms 1 is all connected with control signal VGser1；It is in parallel
The grid of the N number of N-type MOS transistor (M01, M02 ..., M0N) stacked in branch road 1 all respectively with a grid series resistance Rg phase
Even, the other end of the grid series resistance Rg in all parallel branches 1 is all connected with control signal VGsht1.Other radio frequency paths
The attachment structure of series arm (series arm 2,3 ..., N) in (RF2, RF3 ..., RFN) and the series arm in RF1 paths
1 is identical, the attachment structure of the parallel branch (parallel branch 2,3 ..., N) in other radio frequency paths (RF2, RF3 ..., RFN) with
Parallel branch 1 in RF1 paths is identical.
Control signal is to (VGser1 and VGsht1, VGser2 and VGsht2 ..., VGserN and VGshtN) in synchronization
It is high level (being usually 2.0 to 2.5V) to keep one of them, and another is low level (being usually -2.0 to -2.5V).When
When first radio-frequency signal path RF1 is opened, control signal VGser1 is that the series arm 1 under high level, RF1 paths enters ON
The state of (opening), control signal VGsht1 is low level, and the parallel branch 1 under RF1 paths enters OFF (pass) state；It is remaining
Series arm 2 in other paths (RF2, RF3 ..., RFN), 3 ..., N control signal (VGser2, VGser3 ...,
VGserN) be low level, series arm 2,3 ..., N enter OFF (pass) state, parallel branch 2,3 ..., N control signal
(VGsht2, VGsht3 ..., VGshtN) be high level, parallel branch 2,3 ..., N enter ON (opening) state.
In the ideal situation, each transistor stacked of OFF branch roads averagely can assign to the identical radio-frequency voltage amplitude of oscillation,
At this moment the maximal input that RF switch can be handled is：
Wherein, if branch route N number of transistor stack composition, and the source and drain breakdown voltage of single transistor is Vbdds, load
Impedance is Zo.
However, radio frequency can not be blocked completely because MOS transistor has many places parasitic capacitance effect and gate resistance Rg
Signal, total radio-frequency voltage amplitude of oscillation will be unevenly distributed on each MOS transistor.Meanwhile, this voltage swing is uneven
The effect of even distribution is also relevant with pipe sizing, and pipe sizing is smaller, and the phenomenon of voltage swing uneven distribution is more serious.It is right
In RF switch, in order to obtain relatively low insertion loss, the pipe sizing of usual series arm is larger, the transistor of series arm
The uneven Distribution Phenomena of the voltage swing of chain is not serious；But the size of pipe is generally smaller in parallel branch, generally goes here and there
Join 1/1st to seven/5th of pipe sizing in branch road.
Fig. 2 is to use a single-pole double throw (SPDT) switch of the prior art when input power is 36dBm, is in
The voltage swing simulation curve that each transistor that the parallel branch of OFF state is stacked is born.As shown in Figure 2, parallel branch is worked as
During in OFF state, the top pipe of stacked transistors chain bears the voltage swing of maximum, and bottom pipe bears the voltage of minimum
The amplitude of oscillation, the voltage swing being distributed on each transistor is sequentially reduced from the top of stacked transistors chain to bottom.On the one hand, push up
End transistor will reach breakdown voltage first, and at this moment formula (1) will be replaced by：
Obvious Pmax2＜ Pmax1, so as to limit the maximal input that RF switch can be handled.On the other hand, have
The MOS transistor of larger voltage swing will contribute bigger higher hamonic wave, so as to reduce the overall linearity of RF switch.Pass
The solution of system is the quantity for being further added by series connection and parallel branch stacked transistors, and its cost is to produce bigger insertion loss
The bigger chip area with occupancy.
Therefore, in the present embodiment, parallel branch is divided into the grid of the MOS transistor in some, each part
Be connected by gate connected in parallel resistance with a biasing resistor, the other end of biasing resistor be connected with shunt control signal, it is necessary to
Illustrate, if parallel branch includes M biasing resistor, be divided into M part equivalent to by all MOS transistors；So
It is connected again with shunt control signal by biasing resistor, can effectively improves the MOS transistor that big voltage swing is stacked at each
On uneven distribution, allow each pipe to bear than more uniform voltage swing, so as to prevent stacked transistors chain top
Pipe is breakdown and reduction pipe on voltage swing harmonic wave generation so that the power handling capability of switch is closer to formula
(1)。
It should be noted that this programme be applied to symmetrical structure hilted broadsword more throw duplexer chip, can also be easy to
Expanding to band selection switches, the application of switch chip thrown diversity antenna switch and non-symmetrical switch structure and multitool more
In.
Referring to Fig. 3, in the present embodiment, M is 2, and each parallel branch includes：
The N number of gate connected in parallel resistance being connected respectively with N number of MOS transistor grid；
One end is connected with preceding K gate connected in parallel resistance, the first biasing resistor that the other end is connected with shunt control signal；Its
In, K is the positive integer more than 1 and less than N；
One end is connected with rear N-K gate connected in parallel resistance, the second biasing resistor that the other end is connected with shunt control signal.
Wherein, the MOS transistor in each parallel branch is N-type transistor；Each the MOS transistor in series arm is
N-type transistor；In each radio-frequency signal path, in synchronization only keeps shunt control signal and series connection control signal
One is high level；When target radio frequency signal path is opened, the series connection control signal of the target radio frequency signal path is height
Level, the shunt control signal of the target radio frequency signal path is low level；In addition to the target radio frequency signal path
In other radio-frequency signal paths, series connection control signal is low level, and shunt control signal is high level.
Specifically, M=2 in the present embodiment, i.e. biasing resistor quantity be two, the respectively first bigoted resistance and
Second bigoted resistance；Due to there are two bigoted resistance in this programme, it is divided into equivalent to by N number of MOS transistor in parallel branch
Two parts；A part is preceding K (1<K<N) the transistor of individual stacking, another part be below N-K stacking transistor, it is necessary to
Illustrate, because the MOS transistor in this programme uses stacked transistors technology, therefore it is brilliant to MOS in the present embodiment
Body pipe can be understood as from front to back according to being described from front to back：One end that parallel branch is connected with radiofrequency signal port
To be preceding, it is understood that be：It is not specific herein to limit before one end that parallel branch is connected with earth terminal is, as long as energy will be N number of
MOS transistor is divided into two parts.
Specifically, as shown in figure 3, the RF switch that provides of the present invention contain N number of radio-frequency signal path (RF1, RF2,
RF3 ..., RFN), each path is made up of a series arm and a parallel branch.The one end of series arm 1 and RF1 radio frequencies
Signal port is connected, and the other end is connected with antenna port ANT；The one end of parallel branch 1 is connected with RF1 radiofrequency signals port, another
End is connected to the ground.The connection of other radio frequency paths (RF2, RF3 ..., RFN) is identical with RF1 paths.According to the different work(of different application
The demand of rate capacity, series arm and parallel branch are stacked by one or more N-type MOS transistors and constituted, wherein each crystal
The grid of pipe is all connected with a resistance Rg respectively.
The grid of the N number of N-type MOS transistor (M1, M2 ..., MN) stacked in series arm 1 is all connected with a grid respectively
Resistance Rg is connected, and the other end of all grid series resistance Rg in series arm 1 is all connected with control signal VGser1；It is in parallel
The grid of the N number of N-type MOS transistor (M01, M02 ..., M0N) stacked in branch road 1 all respectively with a grid series resistance Rg phase
Connect, then preceding K (1 in parallel branch 1<K<N) the grid series resistance that the transistor (M01, M02 ..., M0K) of individual stacking is connected
Rg other end is all connected with a biasing resistor Rbias1, and the transistor (M0 of N-K stacking below in parallel branch 1
(K+1), M0 (K+2) ..., M0N) the grid series resistance Rg other end that is connected all with a biasing resistor Rbias2 phase
Even, biasing resistor Rbias1 and Rbias2 other end are all connected with control signal VGsht1.Other radio frequency paths (RF2,
RF3 ..., RFN) in series arm (series arm 2,3 ..., N) attachment structure and the phase of series arm 1 in RF1 paths
Together, the attachment structure and RF1 of the parallel branch (parallel branch 2,3 ..., N) in other radio frequency paths (RF2, RF3 ..., RFN)
Parallel branch 1 in path is identical.
It should be noted that VGser1 and VGsht1, VGser2 and VGsht2 ... in the present embodiment, VGserN with
VGshtN is control signal pair, keeps one of them to be high level (being usually 2.0 to 2.5V) in synchronization, in addition one
Individual is low level (being usually -2.0 to -2.5V).When RF1 paths are opened, control signal VGser1 is high level, RF1 paths
Under series arm 1 enter ON (opening) state, control signal VGsht1 is low level, and the parallel branch 1 under RF1 paths enters
OFF (pass) state；Series arm 2 in other remaining paths (RF2, RF3 ..., RFN), 3 ..., N control signal
(VGser2, VGser3 ..., VGserN) be low level, series arm 2,3 ..., N enter OFF (pass) state, parallel branch
2nd, 3 ..., N control signal (VGsht2, VGsht3 ..., VGshtN) is high level, parallel branch 2,3 ..., N enter ON
The state of (opening).
It should be noted that the value of all control signals pair mentioned by this programme, the component value of all resistance, Yi Jisuo
There is the size value of N class MOS transistors, it is necessary to be designed according to the concrete condition of RF switch, this is for those skilled in the art
For be understandable.
Fig. 4 is to use single-pole double throw (SPDT) Switching embodiments of the invention when input power is 36dBm, is in
The voltage swing simulation curve that each transistor that the parallel branch of OFF state is stacked is born；Fig. 5 be using it is of the invention with it is existing
One single-pole double throw (SPDT) Switching embodiments of technology are when input power is 36dBm, the parallel branch heap in OFF state
The maximum voltage amplitude simulation comparison curve that each folded transistor is born.Emulation with test result indicates that, existing typical case opens
Powered-down line structure can make the radio-frequency voltage amplitude of oscillation from top to bottom, be unevenly distributed on the MOS transistor of each stacking, and use
The switched radio frequency voltage swing of the present invention is distributed relatively uniformly among on the MOS transistor of each stacking, so as to improve switch
Robustness.
Fig. 6 is inputted using single-pole double throw (SPDT) the Switching embodiments insertion loss vs of the present invention and prior art
The simulation comparison curve of power.As a result show, be higher than using the 0.1dB power compressions point of the on-off circuit of present invention and adopted
With the switch of prior art, the present invention serves the effect for providing switch power disposal ability.Fig. 7 and Fig. 8 are using this respectively
Invention and single-pole double throw (SPDT) the Switching embodiments second harmonic vs input power and triple-frequency harmonics vs of prior art are defeated
Enter the simulation comparison curve of power.As a result show, under the conditions of big signal power, using the two of the on-off circuit of present invention
Secondary and triple-frequency harmonics is significantly better than the switch using prior art.Emulation and test result indicates that, using proposed by the invention
The problem of RF switch structure can be effectively improved stacked tubes subchain voltage swing uneven distribution, so as to improve the power of switch
Disposal ability and the linearity.
The embodiment of each in this specification is described by the way of progressive, and what each embodiment was stressed is and other
Between the difference of embodiment, each embodiment identical similar portion mutually referring to.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (8)
1. a kind of radio-frequency switch circuit, including multiple radio-frequency signal paths, each radio-frequency signal path is including series arm and simultaneously
Join branch road, each parallel branch includes the MOS transistor of N number of stacking；Wherein, N is the positive integer more than 1；Characterized in that, every
Individual parallel branch also includes：
The N number of gate connected in parallel resistance being connected respectively with N number of MOS transistor grid；
One end is connected with least one gate connected in parallel resistance, the M biasing resistor that the other end is connected with shunt control signal；Its
In, M is the positive integer more than 1 and less than N.
2. radio-frequency switch circuit according to claim 1, it is characterised in that when M is 2, each parallel branch includes：
The N number of gate connected in parallel resistance being connected respectively with N number of MOS transistor grid；
One end is connected with preceding K gate connected in parallel resistance, the first biasing resistor that the other end is connected with shunt control signal；Wherein, K
For the positive integer more than 1 and less than N；
One end is connected with rear N-K gate connected in parallel resistance, the second biasing resistor that the other end is connected with shunt control signal.
3. radio-frequency switch circuit according to claim 2, it is characterised in that the series arm in each radio-frequency signal path
One end be connected with antenna port, the other end is connected with radiofrequency signal port；Parallel branch one in each radio-frequency signal path
End is connected with radiofrequency signal port, and the other end is connected with earth terminal.
4. radio-frequency switch circuit according to claim 3, it is characterised in that the series arm in each radio-frequency signal path
Including：
The MOS transistor of N number of stacking；
One end is connected with the grid of N number of MOS transistor, N number of gate series resistance that the other end is connected with series connection control signal.
5. radio-frequency switch circuit according to claim 4, it is characterised in that the MOS transistor in each parallel branch is N
Transistor npn npn.
6. radio-frequency switch circuit according to claim 5, it is characterised in that the MOS transistor in each series arm is N
Transistor npn npn.
7. radio-frequency switch circuit according to claim 6, it is characterised in that in each radio-frequency signal path, same
Moment only keeps one of shunt control signal and series connection control signal to be high level.
8. radio-frequency switch circuit according to claim 7, it is characterised in that
When target radio frequency signal path is opened, the series connection control signal of the target radio frequency signal path is high level, described
The shunt control signal of target radio frequency signal path is low level；Other radio frequencies letter in addition to the target radio frequency signal path
In number path, series connection control signal is low level, and shunt control signal is high level.
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| CN201710225103.1A CN106972845A (en) | 2017-04-07 | 2017-04-07 | A kind of radio-frequency switch circuit |
| PCT/CN2017/117627 WO2018184406A1 (en) | 2017-04-07 | 2017-12-21 | Radio-frequency switch circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710225103.1A CN106972845A (en) | 2017-04-07 | 2017-04-07 | A kind of radio-frequency switch circuit |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108039585A (en) * | 2017-12-19 | 2018-05-15 | 无锡中普微电子有限公司 | A kind of antenna tuning circuit |
| WO2018184406A1 (en) * | 2017-04-07 | 2018-10-11 | 广东工业大学 | Radio-frequency switch circuit |
| CN109088626A (en) * | 2018-07-21 | 2018-12-25 | 安徽矽磊电子科技有限公司 | A kind of RF switch of super low-power consumption biasing |
| CN110086456A (en) * | 2019-04-25 | 2019-08-02 | 河源广工大协同创新研究院 | A kind of SOI CMOS radio-frequency switch circuit structure only needing positive voltage bias |
| CN110611499A (en) * | 2018-06-15 | 2019-12-24 | 锐迪科微电子（上海）有限公司 | ESD protection circuit of radio frequency switch based on D-pHEMT device |
| CN113472329A (en) * | 2021-08-24 | 2021-10-01 | 上海迦美信芯通讯技术有限公司 | Radio frequency switch circuit for optimizing voltage withstanding uniformity of stacked switch tubes |
| CN113572467A (en) * | 2021-08-24 | 2021-10-29 | 上海迦美信芯通讯技术有限公司 | Radio frequency switch circuit for improving harmonic wave |
| CN113824466A (en) * | 2021-08-30 | 2021-12-21 | 电子科技大学 | Ultra-wideband radio frequency transceiving switch adopting novel clamping resistor |
| CN114564902A (en) * | 2022-01-25 | 2022-05-31 | 南京元络芯科技有限公司 | MOS tube stacking structure for increasing low-frequency radio-frequency signal bearing capacity |
| CN115865122A (en) * | 2022-11-18 | 2023-03-28 | 优镓科技(苏州)有限公司 | Gallium nitride radio frequency switch structure and communication base station |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018184406A1 (en) * | 2017-04-07 | 2018-10-11 | 广东工业大学 | Radio-frequency switch circuit |
| CN108039585A (en) * | 2017-12-19 | 2018-05-15 | 无锡中普微电子有限公司 | A kind of antenna tuning circuit |
| CN110611499A (en) * | 2018-06-15 | 2019-12-24 | 锐迪科微电子（上海）有限公司 | ESD protection circuit of radio frequency switch based on D-pHEMT device |
| CN110611499B (en) * | 2018-06-15 | 2024-01-12 | 锐迪科微电子（上海）有限公司 | ESD protection circuit of radio frequency switch based on D-pHEMT device |
| CN109088626B (en) * | 2018-07-21 | 2022-05-24 | 安徽矽磊电子科技有限公司 | Ultralow-power-consumption biased radio frequency switch |
| CN109088626A (en) * | 2018-07-21 | 2018-12-25 | 安徽矽磊电子科技有限公司 | A kind of RF switch of super low-power consumption biasing |
| CN110086456A (en) * | 2019-04-25 | 2019-08-02 | 河源广工大协同创新研究院 | A kind of SOI CMOS radio-frequency switch circuit structure only needing positive voltage bias |
| CN110086456B (en) * | 2019-04-25 | 2023-03-24 | 河源广工大协同创新研究院 | SOI CMOS radio frequency switch circuit structure only needing positive voltage bias |
| CN113572467A (en) * | 2021-08-24 | 2021-10-29 | 上海迦美信芯通讯技术有限公司 | Radio frequency switch circuit for improving harmonic wave |
| CN113472329A (en) * | 2021-08-24 | 2021-10-01 | 上海迦美信芯通讯技术有限公司 | Radio frequency switch circuit for optimizing voltage withstanding uniformity of stacked switch tubes |
| CN113824466A (en) * | 2021-08-30 | 2021-12-21 | 电子科技大学 | Ultra-wideband radio frequency transceiving switch adopting novel clamping resistor |
| CN114564902A (en) * | 2022-01-25 | 2022-05-31 | 南京元络芯科技有限公司 | MOS tube stacking structure for increasing low-frequency radio-frequency signal bearing capacity |
| CN114564902B (en) * | 2022-01-25 | 2023-03-21 | 南京元络芯科技有限公司 | MOS tube stacking structure for increasing low-frequency radio-frequency signal bearing capacity |
| CN115865122A (en) * | 2022-11-18 | 2023-03-28 | 优镓科技(苏州)有限公司 | Gallium nitride radio frequency switch structure and communication base station |
| CN115865122B (en) * | 2022-11-18 | 2023-08-29 | 优镓科技(苏州)有限公司 | Gallium nitride radio frequency switch structure and communication base station |
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