CN101394174A - Single-pole single-throw switch based on enhanced PHEMT - Google Patents
Single-pole single-throw switch based on enhanced PHEMT Download PDFInfo
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- CN101394174A CN101394174A CNA2007101219779A CN200710121977A CN101394174A CN 101394174 A CN101394174 A CN 101394174A CN A2007101219779 A CNA2007101219779 A CN A2007101219779A CN 200710121977 A CN200710121977 A CN 200710121977A CN 101394174 A CN101394174 A CN 101394174A
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- 230000005669 field effect Effects 0.000 claims abstract description 20
- 230000005404 monopole Effects 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims 1
- 238000003780 insertion Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
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Abstract
The invention relates to the technical field of microwave circuits, and discloses a single-pole single-throw microwave switch based on an enhanced PHEMT (pseudo-field effect transistor), which comprises three enhanced pseudomorphic high electron mobility field effect transistors E PHEMT, three current-limiting resistors R, two blocking capacitors C and two voltage control ends. By using the invention, only 0-0.2V and positive voltage (1V) are needed to be used as the control level for switching off and switching on, so that the microwave switch, the control circuit adopting forward voltage for power supply and other microwave circuits can better realize monolithic integration, the integration level and the realizability are improved, and the design complexity and the cost are reduced.
Description
Technical field
The present invention relates to technical field of microwave circuits, relate in particular to a kind of based on the counterfeit monopole single throw microwave switch of joining high electron mobility field-effect transistor (enhancement-mode PHEMT, i.e. E PHEMT) of enhancement mode.
Background technology
Field-effect transistor (FET) has two kinds of different mode of operations: a kind of is active mode, and another kind is a passive mode.In active mode, FET is as three end active devices; In passive mode, FET is as passive two-terminal device.Radio frequency and microwave signal are connected on drain electrode end and source terminal, and grid is only as control port, and gate terminal is considered as open circuit (high impedance) to radiofrequency signal, and the direct-current control voltage that is applied on the gate terminal is depended in the RF impedance between drain electrode end and the source terminal.For switch application, grid voltage is greater than pinch-off voltage, and FET is in low impedance state; Grid voltage is less than pinch-off voltage, and FET is in high impedance status.
The effect of single-pole single-throw switch (SPST) is whether the signal of control input can be transferred to output; And the effect of single-pole double-throw switch (SPDT) is to control the signal of importing to be transferred to which output.
The conventional monopole single throw microwave switch based on PHEMT all utilizes depletion type PHEMT as switching device, exports from which with control input signals.As shown in Figure 1, Fig. 1 is the circuit diagram of conventional monopole single throw microwave switch based on depletion type PHEMT.When depletion type PHEMT was 0V at grid voltage, the raceway groove conducting was in low impedance state; When the grid voltage negative sense increased to pinch-off voltage, raceway groove was closed, and was in high impedance status, thereby needed two control voltages to be respectively 0V and negative voltage.Fig. 2 shows the IV curve of depletion type PHEMT.
When control circuit and other microwave circuit adopt forward voltage power supply, since different based on the power supply of the microwave switch of depletion type and these circuit, be unfavorable for that monolithic is integrated, thereby bring many difficulties to the design and the realization of circuit.
And enhancement-mode PHEMT (being E PHEMT) is when grid voltage is 0V, and raceway groove is closed, and is in high impedance status; Have only that (0～0.2V) time, raceway groove is opened, and is in low impedance state when the grid voltage forward increases to threshold voltage.Therefore, based on the microwave switch of enhancement-mode PHEMT design, only need 0～0.2V and positive voltage (1V) as control level.Like this, can avoid the conversion of the positive negative sense of power supply, help realizing that with the control circuit and the microwave circuit of positive supply power supply monolithic is integrated, and and then improve integrated level, reduce cost.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of monopole single throw microwave switch based on enhancement-mode PHEMT, make microwave switch and adopt control circuit and other microwave circuit of forward voltage power supply to realize that better monolithic is integrated, improve integrated level and realizability, reduce the complexity and the cost of design.
(2) technical scheme
For achieving the above object, the invention provides a kind of monopole single throw microwave switch based on enhancement-mode PHEMT, this microwave switch comprises three counterfeit high electron mobility field-effect transistor (EPHEMT), three current-limiting resistance R, two capacitance C and two voltage controling ends of joining of enhancement mode
Wherein, the positive pole of the described first voltage controling end V1 is connected with the counterfeit grid of joining high electron mobility field-effect transistor E PHEMT1 of first enhancement mode by the first current-limiting resistance R1;
The positive pole of the described second voltage controling end V2 is connected with the counterfeit grid of joining high electron mobility field-effect transistor E PHEMT2 of second enhancement mode by the second current-limiting resistance R2, is connected with the counterfeit grid of joining high electron mobility field-effect transistor E PHEMT3 of the 3rd enhancement mode by the 3rd current-limiting resistance R3;
The drain electrode of the drain electrode of described E PHEMT1, E PHEMT2 is connected another termination input RFIN of the first capacitance C1 simultaneously with the end of the first capacitance C1;
The drain electrode of the source electrode of described E PHEMT1, E PHEMT3 is connected another termination output RF OUT of the second capacitance C2 simultaneously with the end of the second capacitance C2.
In the such scheme, the source grounding of the source electrode of described E PHEMT2 and E PHEMT3.
In the such scheme, the equal ground connection of negative pole of the negative pole of the described first voltage controling end V1 and the second voltage controling end V2.
In the such scheme, when the grid voltage of E PHEMTT was 1V, this E PHEMT was in conducting state; When the grid voltage of E PHEMT was the threshold voltage of 0～0.2V, this E PHEMT was in closed condition.
In the such scheme, E PHEMT1 is in opening when series connection, E PHEMT2 in parallel, when EPHEMT3 is in closed condition, and microwave switch is in conducting state, and it is low to insert loss, and unlimited radio frequency rf signal is transferred to output RF OUT from input RF IN; E PHEMT1 is in closed condition when series connection, E PHEMT2 in parallel, when E PHEMT3 is in conducting state, and microwave switch is in closed condition, the isolation height, the RF signal can not be transferred to output RFOUT from input RF IN.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
Monopole single throw microwave switch based on enhancement-mode PHEMT provided by the invention, only need 0～0.2V and positive voltage (1V) control level as turn-on and turn-off, make microwave switch and adopt control circuit and other microwave circuit of forward voltage power supply to realize that better monolithic is integrated, improve integrated level and realizability, reduced the complexity and the cost of design.
Description of drawings
Fig. 1 is the circuit diagram of conventional monopole single throw microwave switch based on depletion type PHEMT;
Fig. 2 is the IV curve of depletion type PHEMT;
Fig. 3 is the IV curve of enhancement-mode PHEMT;
Fig. 4 is the circuit diagram of the monopole single throw microwave switch based on enhancement-mode PHEMT provided by the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 4, Fig. 4 is the circuit diagram of the monopole single throw microwave switch based on enhancement-mode PHEMT provided by the invention, and this microwave switch comprises three counterfeit high electron mobility field-effect transistor E PHEMT, three current-limiting resistance R, two capacitance C and two voltage controling ends of joining of enhancement mode.
Wherein, the positive pole of the described first voltage controling end V1 is connected with the counterfeit grid of joining high electron mobility field-effect transistor E PHEMT1 of first enhancement mode by the first current-limiting resistance R1.
The positive pole of the described second voltage controling end V2 is connected with the counterfeit grid of joining high electron mobility field-effect transistor E PHEMT2 of second enhancement mode by the second current-limiting resistance R2, is connected with the counterfeit grid of joining high electron mobility field-effect transistor E PHEMT3 of the 3rd enhancement mode by the 3rd current-limiting resistance R3.
The drain electrode of the drain electrode of described E PHEMT1, E PHEMT2 is connected another termination input RF IN of the first capacitance C1 simultaneously with the end of the first capacitance C1.
The drain electrode of the source electrode of described E PHEMT1, E PHEMT3 is connected another termination output RFOUT of the second capacitance C2 simultaneously with the end of the second capacitance C2.
The source grounding of the source electrode of described E PHEMT2 and E PHEMT3; The equal ground connection of the negative pole of the negative pole of the described first voltage controling end V1 and the second voltage controling end V2.
When the grid voltage of E PHEMTT was 1V, this E PHEMT was in conducting state; When the grid voltage of E PHEMT is that (for enhancement-mode PHEMT, when threshold voltage was generally 0～0.2V), this E PHEMT was in closed condition to threshold voltage.
This monopole single throw microwave switch based on enhancement-mode PHEMT provided by the invention adopts the connection in series-parallel form, structurally is symmetrical, and its operation principle is as follows:
When the grid voltage of series connection E PHEMT1 was 1V, E PHEMT1 was in opening; The grid voltage of E PHEMT2 in parallel, E PHEMT3 is that threshold voltage is (for enhancement-mode PHEMT, when threshold voltage is generally 0～0.2V), E PHEMT2, E PHEMT3 are in closed condition, at this moment, microwave switch is in conducting state, it is extremely low to insert loss, and unlimited radio frequency rf signal is transferred to output RF OUT from input RF IN.When the grid voltage of series connection E PHEMT1 was threshold voltage, E PHEMT1 was in closed condition; When the grid voltage of E PHEMT2 in parallel, E PHEMT3 was 1V, E PHEMT2, E PHEMT3 were in conducting state, and at this moment, microwave switch is in closed condition, and isolation is high, and the RF signal can not be transferred to output RFOUT from input RFIN.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1, a kind of based on the counterfeit monopole single throw microwave switch of joining high electron mobility field-effect transistor of enhancement mode, it is characterized in that, this microwave switch comprises three counterfeit high electron mobility field-effect transistor E PHEMT, three current-limiting resistance R, two capacitance C and two voltage controling ends of joining of enhancement mode
Wherein, the positive pole of the described first voltage controling end V1 is connected with the counterfeit grid of joining high electron mobility field-effect transistor E PHEMT1 of first enhancement mode by the first current-limiting resistance R1;
The positive pole of the described second voltage controling end V2 is connected with the counterfeit grid of joining high electron mobility field-effect transistor E PHEMT2 of second enhancement mode by the second current-limiting resistance R2, is connected with the counterfeit grid of joining high electron mobility field-effect transistor E PHEMT3 of the 3rd enhancement mode by the 3rd current-limiting resistance R3;
The drain electrode of the drain electrode of described E PHEMT1, E PHEMT2 is connected another termination input RF IN of the first capacitance C1 simultaneously with the end of the first capacitance C1;
The drain electrode of the source electrode of described E PHEMT1, E PHEMT3 is connected another termination output RF OUT of the second capacitance C2 simultaneously with the end of the second capacitance C2.
2, according to claim 1ly it is characterized in that the source electrode of described E PHEMT2 and the source grounding of EPHEMT3 based on the counterfeit monopole single throw microwave switch of joining high electron mobility field-effect transistor of enhancement mode.
3, according to claim 1ly it is characterized in that the equal ground connection of negative pole of the negative pole of the described first voltage controling end V1 and the second voltage controling end V2 based on the counterfeit monopole single throw microwave switch of joining high electron mobility field-effect transistor of enhancement mode.
4, according to claim 1ly it is characterized in that based on the counterfeit monopole single throw microwave switch of joining high electron mobility field-effect transistor of enhancement mode,
When the grid voltage of E PHEMTT was 1V, this E PHEMT was in conducting state;
When the grid voltage of E PHEMT was the threshold voltage of 0～0.2V, this E PHEMT was in closed condition.
5, according to claim 1 based on the counterfeit monopole single throw microwave switch of joining high electron mobility field-effect transistor of enhancement mode, it is characterized in that, when series connection E PHEMT1 is in opening, E PHEMT2 in parallel, when E PHEMT3 is in closed condition, microwave switch is in conducting state, the insertion loss is low, and unlimited radio frequency rf signal is transferred to output RF OUT from input RF IN; E PHEMT1 is in closed condition when series connection, E PHEMT2 in parallel, when E PHEMT3 is in conducting state, and microwave switch is in closed condition, the isolation height, the RF signal can not be transferred to output RF OUT from input RF IN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101219779A CN101394174A (en) | 2007-09-19 | 2007-09-19 | Single-pole single-throw switch based on enhanced PHEMT |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101219779A CN101394174A (en) | 2007-09-19 | 2007-09-19 | Single-pole single-throw switch based on enhanced PHEMT |
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| CN101394174A true CN101394174A (en) | 2009-03-25 |
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| CNA2007101219779A Pending CN101394174A (en) | 2007-09-19 | 2007-09-19 | Single-pole single-throw switch based on enhanced PHEMT |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953996A (en) * | 2015-06-29 | 2015-09-30 | 中国电子科技集团公司第二十四研究所 | High-isolation RF (radio frequency) switch circuit |
| CN107124142A (en) * | 2017-03-22 | 2017-09-01 | 电子科技大学 | Adjustable predistortion device based on nonlinear device |
| CN108599752A (en) * | 2018-06-26 | 2018-09-28 | 康希通信科技（上海）有限公司 | Single-pole single-throw(SPST RF switch |
| CN112373307A (en) * | 2020-11-18 | 2021-02-19 | 北京现代汽车有限公司 | Charging protection method and system and vehicle |
| CN116545425A (en) * | 2023-07-06 | 2023-08-04 | 合肥芯谷微电子股份有限公司 | Millimeter wave single-pole single-throw switch |
-
2007
- 2007-09-19 CN CNA2007101219779A patent/CN101394174A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953996A (en) * | 2015-06-29 | 2015-09-30 | 中国电子科技集团公司第二十四研究所 | High-isolation RF (radio frequency) switch circuit |
| CN104953996B (en) * | 2015-06-29 | 2018-01-09 | 中国电子科技集团公司第二十四研究所 | A kind of high-isolation radio-frequency switch circuit |
| CN107124142A (en) * | 2017-03-22 | 2017-09-01 | 电子科技大学 | Adjustable predistortion device based on nonlinear device |
| CN108599752A (en) * | 2018-06-26 | 2018-09-28 | 康希通信科技（上海）有限公司 | Single-pole single-throw(SPST RF switch |
| CN112373307A (en) * | 2020-11-18 | 2021-02-19 | 北京现代汽车有限公司 | Charging protection method and system and vehicle |
| CN116545425A (en) * | 2023-07-06 | 2023-08-04 | 合肥芯谷微电子股份有限公司 | Millimeter wave single-pole single-throw switch |
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Open date: 20090325 |