CN104868894A - Radio frequency switch circuit and opening and closing method thereof - Google Patents
Radio frequency switch circuit and opening and closing method thereof Download PDFInfo
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- CN104868894A CN104868894A CN201510128623.1A CN201510128623A CN104868894A CN 104868894 A CN104868894 A CN 104868894A CN 201510128623 A CN201510128623 A CN 201510128623A CN 104868894 A CN104868894 A CN 104868894A
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Abstract
The radio frequency switch circuit without negative voltage control and the starting and stopping method are characterized in that: the transistor comprises a MOSFET transistor, wherein the drain electrode of the transistor is connected with a radio frequency signal input end RFin, the source electrode of the transistor is connected with a radio frequency signal output end RFout, a first capacitor is connected between the radio frequency signal input end and the drain electrode, a second capacitor is connected between the radio frequency signal output end and the source electrode, the drain electrode voltage input end is connected between the drain electrode and the first capacitor, and the source electrode voltage input end is connected between the source electrode and the second capacitor. The on-off voltage of the MOSFET is changed by increasing the capacitance, a negative voltage circuit on a chip is omitted, the same radio frequency performance can be realized in a simpler circuit design and a smaller chip area, and therefore a radio frequency switch chip with higher cost performance is realized.
Description
Technical field
Patent of the present invention belongs to semiconductor integrated circuit design field, particularly relate to a kind of do not need negative voltage to control radio-frequency switch circuit and starting method.
Background technology
Integrated RF switch chip based on silicon substrate is widely used in wireless telecommunication system, and it should have low cost and excellent radio-frequency performance, such as low insertion loss, high-isolation, and high linearity.Existing switching circuit structure is made up of a series circuit and a parallel circuits, and each circuit is a mosfet transistor, by controlling opening (ON) and closing the function that (OFF) realizes radio-frequency (RF) switch of mosfet transistor.In mosfet transistor, when Vgs is greater than threshold voltage (Vth), meeting On current between drain electrode and source electrode, current value increases along with the magnitude of voltage (Vds) between drain electrode and source electrode and increases, now mosfet transistor is in conducting state, be equivalent to a resistance, when Vgs is less than threshold voltage, or grid voltage is when being less than source voltage, On current is not had between drain electrode and source electrode, now mosfet transistor is in closed condition, is equivalent to an electric capacity, as shown in Figure 1.In traditional circuit design, usually make grid voltage be negative value, and source electrode and drain voltage are 0 to close mosfet transistor, and make grid voltage be on the occasion of, and source electrode and drain voltage are 0 to open mosfet transistor.Visible, the radio-frequency (RF) switch chip based on this control principle must use a circuit for generating negative voltage.
Above it should be noted that, just conveniently to the technical scheme of the application, clear, complete explanation is carried out to the introduction of technical background, and facilitate the understanding of those skilled in the art to set forth.Only can not think that technique scheme is conventionally known to one of skill in the art because these schemes have carried out setting forth in the background technology part of the application.
Summary of the invention
Applicant finds, above-mentioned negative voltage circuit brings more complicated design and larger chip area.In order to the control circuit of facilitating chip, save circuit for generating negative voltage, present applicant proposes a kind of do not need negative voltage to control radio-frequency switch circuit and starting method.Technical problems to be solved in this application are, provide a kind of do not need negative voltage to control radio-frequency switch circuit and starting method.
In order to solve above technical problem, according to an aspect of the embodiment of the present application, a kind of radio-frequency switch circuit not needing negative voltage to control is provided, comprise a mosfet transistor, the drain electrode of this transistor is connected with radio-frequency (RF) signal input end RFin, the source electrode of this transistor is connected with RF signal output RFout, one first electric capacity is connected with between described radio-frequency (RF) signal input end and described drain electrode, one second electric capacity is connected with between RF signal output and described source electrode, drain voltage input is connected between described drain electrode and the first electric capacity, source voltage input is connected between described source electrode and is connected between described source electrode and the second electric capacity.
The application also provides a kind of method for opening and closing of above-mentioned radio-frequency switch circuit, wherein (1) applies positive voltage value V_gate on grid, when described source electrode and the upper voltage applied of drain electrode are 0, when between grid and source electrode, voltage Vgs is greater than the threshold voltage vt h of transistor, described mosfet transistor is unlocked; (2) when the magnitude of voltage V_gate on grid is 0, described source electrode and drain electrode apply positive magnitude of voltage, and voltage Vgs<0 between grid and source electrode, described mosfet transistor is closed.
According to the another one embodiment of the application, there is provided a kind of do not need negative voltage to control radio-frequency switch circuit, comprise multiple mosfet transistor be connected in series, the grid of described multiple mosfet transistor is electrically connected to each other, form public grid, wherein the drain electrode of the first mosfet transistor is connected with radio-frequency (RF) signal input end RFin, the source electrode of last mosfet transistor is connected with RF signal output RFout, one first electric capacity is connected with between described radio-frequency (RF) signal input end and described drain electrode, one second electric capacity is connected with between RF signal output and described source electrode, drain voltage input is connected between described drain electrode and the first electric capacity, source voltage input is connected between described source electrode and is connected between described source electrode and the second electric capacity.
According to another aspect of the embodiment of the present application, the source electrode of each transistor of multiple mosfet transistor be connected in series and drain electrode are electrically connected to each other and are electrically connected with draining with the source electrode of other transistor.
The beneficial effect of the application is: traditional method realizes opening of mosfet transistor by designing extra negative voltage circuit and manage, its cost is complicated circuit design and larger chip area, the technique scheme that the application proposes changes by increasing electric capacity the voltage that mosfet transistor opens and close, eliminate the negative voltage circuit on sheet, same radio-frequency performance can be realized in simpler circuit design and less chip area, thus realize the radio-frequency (RF) switch chip more having cost performance.
With reference to explanation hereinafter and accompanying drawing, disclose in detail the particular implementation of the application, the principle specifying the application can adopted mode.Should be appreciated that, thus the execution mode of the application is not restricted in scope.In the spirit of claims and the scope of clause, the execution mode of the application comprises many changes, amendment and is equal to.
The feature described for a kind of execution mode and/or illustrate can use in one or more other execution mode in same or similar mode, combined with the feature in other execution mode, or substitutes the feature in other execution mode.
Should emphasize, term " comprises/comprises " existence referring to feature, one integral piece, step or assembly when using herein, but does not get rid of the existence or additional of one or more further feature, one integral piece, step or assembly.
Accompanying drawing explanation
Included accompanying drawing is used to provide the further understanding to the embodiment of the present application, which constitutes a part for specification, for illustrating the execution mode of the application, and comes together to explain the principle of the application with text description.Apparently, the accompanying drawing in the following describes is only some embodiments of the application, for those of ordinary skill in the art, under the prerequisite not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.In the accompanying drawings:
Fig. 1 is single mosfet transistor switch opens and closedown schematic diagram in prior art;
Fig. 2 is that the application does not need the single mosfet transistor switch opens of negative voltage and closes schematic diagram;
Fig. 3 is that the application has the switch opens of multiple mosfet transistor and closes schematic diagram.
Embodiment
With reference to accompanying drawing, by specification below, the aforementioned and further feature of the application will become obvious.In the specification and illustrated in the drawings, specifically disclose the particular implementation of the application, which show the some embodiments of the principle that wherein can adopt the application, will be appreciated that, the application is not limited to described execution mode, on the contrary, the application comprises the whole amendments fallen in the scope of claims, modification and equivalent.
As shown in Figure 2, the radio-frequency switch circuit not needing negative voltage to control of the application, comprise a mosfet transistor, the drain electrode of this transistor is connected with radio-frequency (RF) signal input end RFin, the source electrode of this transistor is connected with RF signal output RFout, one first electric capacity is connected with between described radio-frequency (RF) signal input end and described drain electrode, one second electric capacity is connected with between RF signal output and described source electrode, drain voltage input is connected between described drain electrode and the first electric capacity, source voltage input is connected between described source electrode and is connected between described source electrode and the second electric capacity.
The method for opening and closing of above-mentioned radio-frequency switch circuit is as follows, grid applies positive voltage value V_gate, when described source electrode and the upper voltage applied of drain electrode are 0, when between grid and source electrode, voltage Vgs is greater than the threshold voltage vt h of transistor, described mosfet transistor is opened; When the magnitude of voltage V_gate on grid is 0, described source electrode and drain electrode apply positive magnitude of voltage, and voltage Vgs<0 between grid and source electrode, described mosfet transistor is closed.Under two states of Kai Heguan, all do not need negative voltage, but mosfet transistor still can be opened and close, and ensure that the performance of radio-frequency (RF) switch normally.
In this application, the effect of the first electric capacity and the second electric capacity can be that the radiofrequency signal intercepting source voltage V_s radio frequency signal input part RFin that the drain voltage V_d of drain voltage input input and source voltage input input and RF signal output RFout has an impact.
In the prior art, the power control circuit of usual chip comprises several part: bandgap (band-gap reference circuit), LDO (low pressure difference linear voltage regulator), and logical circuit.Bandgap and LDO can be stabilized to the supply voltage of outside the positive voltage value of needs, but can not realize negative voltage output.If need negative voltage on sheet, usually can use charge pump (charge pump), that certainly will increase circuit complexity and area on the basis of original power control circuit.
And in the present embodiment, only bandgap need be retained, LDO and logical circuit etc. produce positive voltage, and without the need to producing the charge pump of negative voltage, therefore, compared with the existing radio-frequency switch circuit needing negative voltage to control, complexity and the area of the radio-frequency switch circuit of the application are all minimized.
Be illustrated in figure 3 the another one embodiment of the application, a kind of comprise two or more mosfet transistor radio-frequency switch circuit, comprise the mosfet transistor that two or more is connected in series, the grid of described two or more mosfet transistor is electrically connected to each other, form public grid, wherein the drain electrode of the first mosfet transistor is connected with radio-frequency (RF) signal input end RFin, the source electrode of last mosfet transistor is connected with RF signal output RFout, one first electric capacity is connected with between described radio-frequency (RF) signal input end and described drain electrode, one second electric capacity is connected with between RF signal output and described source electrode, drain voltage input is connected between described drain electrode and the first electric capacity, source voltage input is connected between described source electrode and is connected between described source electrode and the second electric capacity.
The above-mentioned method for opening and closing with the radio-frequency (RF) switch of multiple mosfet transistor is similar with the method for opening and closing of the radio-frequency (RF) switch of single mosfet transistor, because multiple mosfet transistor is connected in series, the radio-frequency (RF) switch of described multiple mosfet transistor can be applied in powerful radio circuit.
The technique scheme that the application proposes changes by increasing electric capacity the voltage that mosfet transistor opens and close, eliminate the negative voltage circuit on sheet, only need positive voltage can complete the switching manipulation of mosfet transistor, thus can realize same radio-frequency performance in simpler circuit design and less chip area, thus realize the radio-frequency (RF) switch chip more having cost performance.
More than in conjunction with concrete execution mode to present application has been description, but it will be apparent to those skilled in the art that these descriptions are all exemplary, is not the restriction to the application's protection range.Those skilled in the art can make various variants and modifications according to the spirit of the application and principle to the application, and these variants and modifications are also in the scope of the application.
Claims (4)
1. a radio-frequency switch circuit, it is characterized in that: comprise a mosfet transistor, the drain electrode of this transistor is connected with radio-frequency (RF) signal input end RFin, the source electrode of this transistor is connected with RF signal output RFout, one first electric capacity is connected with between described radio-frequency (RF) signal input end and described drain electrode, one second electric capacity is connected with between RF signal output and described source electrode, drain voltage input is connected between described drain electrode and the first electric capacity, and source voltage input is connected between described source electrode and is connected between described source electrode and the second electric capacity.
2. a radio-frequency switch circuit, it is characterized in that: comprise at least two mosfet transistors be connected in series, the grid of described at least two mosfet transistors is electrically connected to each other, form public grid, wherein the drain electrode of the first mosfet transistor is connected with radio-frequency (RF) signal input end RFin, the source electrode of last mosfet transistor is connected with RF signal output RFout, one first electric capacity is connected with between described radio-frequency (RF) signal input end and described drain electrode, one second electric capacity is connected with between RF signal output and described source electrode, drain voltage input is connected between described drain electrode and the first electric capacity, source voltage input is connected between described source electrode and is connected between described source electrode and the second electric capacity.
3. radio-frequency switch circuit according to claim 2, is characterized in that, the source electrode of each transistor of at least two mosfet transistors be connected in series and drain electrode are electrically connected to each other and are electrically connected with draining with the source electrode of other transistor.
4. a method for opening and closing for radio-frequency switch circuit as claimed in claim 1, is characterized in that:
(1) on grid, apply positive voltage value V_gate, when described source electrode and the upper voltage applied of drain electrode are 0, when between grid and source electrode, voltage Vgs is greater than the threshold voltage vt h of transistor, described mosfet transistor is unlocked;
(2) when the magnitude of voltage V_gate on grid is 0, described source electrode and drain electrode apply positive magnitude of voltage, and voltage Vgs<0 between grid and source electrode, described mosfet transistor is closed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510128623.1A CN104868894A (en) | 2015-03-23 | 2015-03-23 | Radio frequency switch circuit and opening and closing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510128623.1A CN104868894A (en) | 2015-03-23 | 2015-03-23 | Radio frequency switch circuit and opening and closing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106100320A (en) * | 2016-06-30 | 2016-11-09 | 唯捷创芯(天津)电子技术股份有限公司 | The charge pump unit of a kind of frequency-adjustable, chip and communication terminal |
| CN106911326A (en) * | 2015-12-18 | 2017-06-30 | 上海新微技术研发中心有限公司 | Radio frequency switch capable of reducing bias control signal |
| CN111030716A (en) * | 2019-12-30 | 2020-04-17 | 深圳市大富科技股份有限公司 | 5G mobile communication system and radio frequency coupling circuit thereof |
| CN111064456A (en) * | 2019-12-04 | 2020-04-24 | 维沃移动通信有限公司 | Radio frequency switch and electronic equipment |
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| CN103795432A (en) * | 2014-03-10 | 2014-05-14 | 锐迪科创微电子（北京）有限公司 | High-linearity multimode radio frequency antenna switch circuit |
| CN104079275A (en) * | 2014-06-25 | 2014-10-01 | 北京七星华创电子股份有限公司 | Radio frequency switch assembly |
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| US20060261912A1 (en) * | 2005-05-23 | 2006-11-23 | Matsushita Electric Industrial Co., Ltd. | Radio frequency switching circuit and semiconductor device including the same |
| CN101102103A (en) * | 2006-05-31 | 2008-01-09 | 松下电器产业株式会社 | Radio frequency switching circuit, radio frequency switching device, and transmitter module device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106911326A (en) * | 2015-12-18 | 2017-06-30 | 上海新微技术研发中心有限公司 | Radio frequency switch capable of reducing bias control signal |
| CN106100320A (en) * | 2016-06-30 | 2016-11-09 | 唯捷创芯(天津)电子技术股份有限公司 | The charge pump unit of a kind of frequency-adjustable, chip and communication terminal |
| CN111064456A (en) * | 2019-12-04 | 2020-04-24 | 维沃移动通信有限公司 | Radio frequency switch and electronic equipment |
| CN111064456B (en) * | 2019-12-04 | 2023-08-29 | 维沃移动通信有限公司 | Radio frequency switch and electronic equipment |
| CN111030716A (en) * | 2019-12-30 | 2020-04-17 | 深圳市大富科技股份有限公司 | 5G mobile communication system and radio frequency coupling circuit thereof |
| CN111030716B (en) * | 2019-12-30 | 2021-09-10 | 深圳市大富科技股份有限公司 | 5G mobile communication system and radio frequency coupling circuit thereof |
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Application publication date: 20150826 |