CN105702656A - 在引线互连点上具有镀层的集成电路器件及其形成方法 - Google Patents

在引线互连点上具有镀层的集成电路器件及其形成方法 Download PDF

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CN105702656A
CN105702656A CN201510624966.7A CN201510624966A CN105702656A CN 105702656 A CN105702656 A CN 105702656A CN 201510624966 A CN201510624966 A CN 201510624966A CN 105702656 A CN105702656 A CN 105702656A
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coated
lead
wire
bonding line
line part
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CN105702656B (zh
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黄志洋
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STMicroelectronics Sdn Bhd
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STMicroelectronics Sdn Bhd
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Abstract

本发明涉及在引线互连点上具有镀层的集成电路器件及其形成方法。一种集成电路(IC)器件包括IC裸片和多个引线。每个引线包括：包含第一材料的未镀制的近端和包含该第一材料的未镀制的远端。镀制的键合线部分在近端和远端之间延伸并且包含第一材料和在第一材料上的第二材料的镀层。多个键合线在IC裸片和引线的镀制的键合线部分之间延伸。包封材料包围IC裸片和键合线，使得每个引线的未镀制的近端和镀制的键合线部分被该包封材料覆盖。

Description

在引线互连点上具有镀层的集成电路器件及其形成方法
技术领域
本发明涉及集成电路器件的领域，并且更特别地涉及具有从封装的侧面延伸的引线的集成电路封装并且涉及无引线封装。
背景技术
诸如方形扁平封装(QFP)、小外形集成电路(SOC)封装和塑料单小外形(PSSO)封装的集成电路封装包括裸片焊垫(pad)以及支撑在裸片焊垫表面上的集成电路(或裸片)。包封材料包围集成电路。经常被叫做引线(诸如“鸥翼”引线)的多个引脚通常从形成封装的包封材料的侧面延伸。引线通过键合线被连接到包封的集成电路。这些类型的集成电路器件经常被形成为表面贴装器件。封装形式可以是扁平矩形体，并且经常是具有沿着所有四个侧面延伸的引线的正方体。存在许多设计变化，这些变化通常区别于引线的数量、它们的节距、封装尺寸以及用于构建封装的材料。经常挑选材料以改进或改变封装的热特性。
包封材料由诸如环氧树脂或其他塑料材料的模制化合物形成，模制化合物有时可能不能与引线很好地粘附，在这种情况下，形成包封材料的模制化合物将与引线中的一个或多个引线分离。该分离可以由温度改变引起并且被称为分层。它通常在靠近键合线所附接的裸片的引线末端处的内部应力的点处发生。对于许多封装来说，键合线是由金形成，并且引线末端已经涂覆有银以提升接线键合。用于包封材料的模制化合物通常与铜很好地键合，但是不与银很好地键合，并且在模制化合物和任何银涂层之间发生分层并且由该分层引起接线键合失效。一些封装为了节省成本利用铜线替换金线，但是这产生引线末端分层的更大可能性，并且引起更严重的接线键合失效。
发明内容
一种集成电路(IC)器件包括IC裸片和多个引线，该多个引线中的每个引线均包括包含第一材料的未镀制的近端和包含该第一材料的未镀制的远端。镀制的键合线部分在近端和远端之间延伸并且包含第一材料和在第一材料上的第二材料的镀层。多个键合线被包括并且在IC裸片和相应的引线的镀制的键合线部分之间延伸。包封材料包围IC裸片和该多个键合线，使得每个引线的未镀制的近端和镀制的键合线部分被该包封材料覆盖。
IC器件可以包括在镀制的键合线部分和未镀制的远端之间的未镀制的中间部分。在这些实施例中，包封材料也可以覆盖每个引线的未镀制的中间部分。
例如，第一材料可以包括铜，并且第二材料可以包括银。例如，多个键合线中的每个键合线可以包括该第一材料。键合线可以包括铜。未镀制的远端可以在100到300微米的范围中延伸，并且涂层的键合线部分可以在350到550微米的范围中延伸。例如，每个引线可以具有无开口的连续的形状。
一种制作集成电路(IC)器件的方法包括形成多个引线，其中每个引线包括包含第一材料的未镀制的近端和包含该第一材料的未镀制的远端。镀制的键合线部分在近端和远端之间并且可以包含第一材料以及在第一材料上的第二材料的镀层。该方法可以进一步包括将多个键合线耦合到IC裸片和多个引线，使得每个键合线在IC裸片和相应的引线的镀制的键合线部分之间延伸。可以形成包封材料以包围IC裸片和键合线，使得每个引线的未镀制的近端和镀制的键合线部分被该包封材料覆盖。
附图说明
图1是形成为具有“鸥翼”型引线的表面贴装集成电路封装的现有技术集成电路器件的透视图。
图2是作为诸如在图1中示出的另一现有技术集成电路器件的X射线图像的平面图并且示出了引线末端分层的示例。
图3是示出诸如在图2中的现有技术封装内的引线上的由分层产生颈部断裂的示例的显微照片。
图4是与在图2中所示的相似的现有技术封装的一部分的放大图并且示出每个引线的引线末端上的全部银镀层。
图5是与在图4中所示的相似的另一放大图并且示出如在现有技术中的未镀制的铜引线。
图6是包括用于将键合线机械锁定到引线上的开口的现有技术引线的示例。
图7是具有形成在引线上的包封锁的现有技术集成电路封装的平面图。
图8是根据非限制性示例的集成电路器件的一部分的放大图，并且示出了在引线的未镀制的近端和远端之间的镀制的键合线。
图9是根据非限制性示例的与在图8中所示的相似的另一集成电路器件的示意平面图并且示出了沿着引线施加的未切割的银带。
图10是根据非限制性示例的在铜引线上具有银镀层区域的塑料单小外形(PSSO)封装的示例并且示出了银和铜之间的相对尺寸。
图11是根据非限制性示例的示出引线以及作为镀制的键合线部分的多个带和作为镀制的接线部分的单个带和圆形涂覆的点的示例的集成电路器件的一部分的示意平面图。
图12是根据非限制性示例的作为倒装芯片的另一集成电路器件的不完整的侧面截面图。
图13是根据非限制性示例的与在图12中所示的相似的、但示出了使用铜柱的倒装芯片的另一不完整的侧面截面图。
图14是根据非限制性示例的在图12中所示的器件的俯视平面图。
具体实施方式
现在将参考示出本发明的优选实施例的附图在下文中更完整地描述本发明。然而，该发明可以以许多不同的形式实施并且不应当被解释成受限于本文阐述的实施例。相反地，提供这些实施例使得该公开将是全面和完整的，并且将向本领域技术人员完全传达本发明的范围。相似的号码自始至终指示相同的元件，并且在备选的实施例中使用加撇符号指示相似元件。
图1是现有技术集成电路器件10的透视图，在该示例中集成电路器件10形成为表面贴装集成电路(IC)封装和方形扁平封装(QFP)，包括通常由作为包围IC(未示出)的模制化合物的塑料材料形成的包封材料12。多个“鸥翼”引线14被耦合到包封的IC并且从封装的四个侧面向外延伸。引线14被焊接到电路板16。在图1的示例中，方形扁平封装包括从封装的每个侧面延伸的多个引脚或引线14，该封装在该示例中是矩形的，被配置成方形主体或封装设计。方形扁平封装的商业版的范围从经常具有32个的引线的封装到超过300个引线的封装，该引线具有从0.4mm到1.0mm的范围的节距。它们经常作为低轮廓方形扁平封装(LQFP)或薄方形扁平封装(TQFP)被制造和销售。尽管大部分主题将关于示例方形扁平封装描述，但是根据非限制性示例的集成电路器件可以被形成为许多不同器件配置，包括方形扁平封装或其他表面贴装或集成电路封装和小外形集成电路(SOIC)和塑料单小外形(PSSO)封装。
图2是具有从封装引出的引线的使用x-射线图像的与图1中的相似的封装10的、并且示出了在18处引线末端分层的示例并且在封装中产生了键合线20失效的平面图。IC裸片22被支撑在具有连接IC22和引线14的图示的键合线18的裸片焊垫24上。
图3是在诸如在图2中所示的现有技术引线末端处的示例失效的放大的显微照片，该失效来自通过低处拉伸产生的分层，低处拉伸发生并且当引线末端分层时被助长，尤其是在该示例中使用铜线时。
图4到图7是施加到引线的末端并且用于将引线末端分层最小化的不同技术的现有技术示例。这些示例都存在导致如下文中所描述的分层的一些技术缺点。
图4是具有IC32和引线34的现有技术封装30的一部分的示例，每个引线34具有用于银、金或铜键合线(未示出)的接线键合的兼容性表面的镀银的引线末端36。图4中所示的镀银的引线末端的缺点在于，倾向于引线末端36分层，尤其是当使用短引线时，并且需要更多的银消耗，这对于大的封装可以变得惊人地昂贵。
图5是示出具有未涂覆的引线末端46的整个未涂覆的铜引线44的现有技术封装40和IC42的一部分的另一示例，这经由氧化铜给予铜对于诸如塑料模制材料的包封化合物的附着力。由于没有银镀层，这种类型的引线44节省了银。它的缺点是接线键合的挑战，由于通常只有在接线键合工艺期间所使用的机器设计和阶段控制和精确的步骤控制的情况下控制引线框架氧化时，键合线能够键合至铜线。这增加了最终产品的成本。
图6是具有IC52的封装50的另一示例并且示出了在引线末端56中具有用于模制化合物形成更强的机械键合的开口或孔55的引线54。这种类型的系统是有利的，因为它形成了到引线54的键合线的强机械锁，但是具有需要更大引线尺寸的确定并且使用更多引线面积，诸如需要增加的引线宽度以在引线末端56中容纳开口。在制造期间，它还需要额外的冲压步骤，再次增加了成本。
在图7中示出了另一现有技术封装，该封装在引线中使用凹槽以形成包封锁来锁定键合线。示例描述在美国专利公开号2008/0067698中。
该IC封装100包括在诸如裸片附接焊盘(paddle)的焊盘104之上的集成电路裸片102。IC裸片102在诸如引线的外部互连106的一部分和分流条(tiebar)108之上延伸。分流条108连接到焊盘104的边角。
外部互连106中的每个具有凹槽110，诸如相交的凹槽段。凹槽110朝向IC封装100的边缘定位。凹槽110具有第一凹槽段112和第二凹槽段114。第一凹槽段112沿着外部互连106的纵向维度116。第二凹槽段114与第一凹槽段112垂直。凹槽110具有第一凹槽段112以及第二凹槽段114的三个实例。
诸如环氧树脂模制化合物的包封118覆盖IC裸片102、焊盘104、分流条108和外部互连106。包封118填充在形成模制锁(moldlock)的外部互连106中的凹槽110。分流条108和焊盘104也提供了模制锁。该模制锁形成了保持包封118在原位的结构增强。模制锁帮助抵抗包封的分层，尤其是对一些键合线可能位于的区域。
尽管凹槽110形成紧密的包封键合并且抵抗分层，但是它包括特别的制造序列以形成凹槽，这会增加成本。
图8是根据非限制性示例的作为IC器件200的一部分的多个引线的示例，IC器件200作为与在图1和图2中所示的封装以及图5的引线相似的封装但是具有镀制的键合线。IC器件200以不完整的、平面图示出并且包括IC裸片202和多个引线204和在IC裸片202和引线204之间延伸的键合线206。在该示例中，键合线206在IC裸片202和如在下文中详细解释的相应引线204的镀制的键合线部分208之间延伸。每个引线204包括由第一材料形成的未镀制的近端210和由第一材料形成的未镀制的远端212，诸如在一个示例中由铜形成。未镀制的近端210和远端212之间的镀制的键合线部分208均包括第一材料和第一材料上的第二材料的镀层，如由在铜引线204上的银镀层214示出的。如图8中的包封材料的剖视图中所示，包封材料216包围IC裸片202和键合线206，使得每个引线204的未镀制的近端210和镀制的键合线部分208被包封材料覆盖，该包封材料通常由诸如环氧树脂的塑料模制化合物或其他材料形成。
每个引线204进一步包括与镀制的键合线部分208和未镀制的远端212相邻的未镀制的中间部分218。包封材料216覆盖每个引线204的未镀制的中间部分218。第一材料可以由铜形成并且如前文中指明地形成镀层的第二材料可以是银。键合线206中的每个可以由诸如铜的第一材料形成。也可以使用其他材料并且利用无铅封装。
图9示出了作为部分地制造的封装250的IC器件的示例并且示出两个IC252、254以及具有形成在其上的引线262的引线框架260。
在制造期间，横跨引线262施加银带镀层266。然后切掉引线框架260，并且发生接线键合。因此形成具有银镀层的键合线部分。
图10是如在图8中的引线204的一部分的放大图并且示出延伸大约100微米到300微米并且在该示例中是200微米的未镀制的近端210以及延伸大约350微米到500微米并且在该示例中是450微米的每个镀制的键合线部分208，其中朝向包封终止的区域的总长度大约1200微米。
每个引线204由无开口的连续的形状形成，使得该引线与在图6中所示的具有用于模制化合物的孔以增加机械锁定的引线相比可以利用更小的宽度形成。镀制的键合线部分的使用与镀制的带之间的良好附着力表面组合，并且提供了鲁棒的键合表面。对于铜键合线，可能有比金线更硬的更长的线，但是这并不被视为关键问题。
图11是集成电路器件的另一实施例的不完整的平面图，该平面图示出镀制的键合线部分的不同示例并且示出引线300以及在示例中的左侧的形成镀制键合线部分的多个带310。如在多个带310的右方所示的，单个带320可以形成镀制的键合线部分。作为镀制点的圆标记可以形成镀制的键合线部分并且在该示例中，在左侧图示了三个标记或点并且在右侧上图示了单个标记或点。在带310中间的区域可以给予模制化合物附着力用于封装鲁棒性，并且在不增加成本情况下，该带给予了对诸如键合线的另一材料粘附的额外的保证的可能性。
图12是形成为焊球倒装芯片器件的集成电路器件400的不完整的侧面截面图，集成电路器件400包括包封410以及连接到镀制键合线部分430的焊球420，镀制键合线部分430形成为带并且是焊料润湿性友好的。引线450包括铜表面/模制化合物粘附友好的表面440。
图13是在包封410'和引线450'之间包括铜柱420'的另一倒装芯片器件400'。镀制的键合线部分430'可以与在图12中所示的相似地形成并且也包括铜表面/模制化合物粘附友好的表面440'。
图14是与在图12中所示的相似的倒装芯片器件的平面图，该平面图示出在任一侧上具有一对引线450的该非限制性示例中的整体布局。
制作集成电路(IC)器件的方法包括形成多个引线，其中每个引线包括包含第一材料的未镀制的近端和包含该第一材料的未镀制的远端。镀制的键合线在近端和远端之间并且包含该第一材料和在第一材料上的第二材料的镀层。该方法进一步包括将多个键合线耦合到IC裸片和多个引线，使得每个键合线在IC裸片和相应引线的镀制的键合线部分之间延伸。形成包封材料以包围IC裸片和多个键合线，使得每个引线的未镀制的近端和镀制的键合线部分被包封材料覆盖。
每个引线可以在镀制的键合线部分和未镀制的远端之间包括未镀制的中间部分。包封材料也可以覆盖每个引线的未镀制的中间部分。第一材料可以包括铜而第二材料可以包括银。
受益于在前文描述和关联的附图中所呈现的教导，本领域技术人员可以设想本发明的很多修改和其他实施例。因此，应当理解本发明不受所公开的特定实施例限制，并且修改和实施例旨在被包括在所附的权利要求的范围内。

Claims (20)

1.一种集成电路IC器件，包括：
IC裸片；
多个引线，每个引线包括：
未镀制的近端，包括第一材料，
未镀制的远端，包括所述第一材料，以及
镀制的键合线部分，在所述近端和所述远端之间并且包括所述第一材料和所述第一材料上的第二材料的镀层；
多个键合线，每个键合线在所述IC裸片和相应的引线的所述镀制的键合线部分之间延伸；
包封材料，包围所述IC裸片和多个键合线，使得每个引线的所述未镀制的近端和所述镀制的键合线部分被所述包封材料覆盖。
2.根据权利要求1所述的IC器件，其中每个引线进一步包括在所述镀制的键合线部分和所述未镀制的远端之间的未镀制的中间部分；并且其中所述包封材料还覆盖每个引线的所述未镀制的中间部分。
3.根据权利要求1所述的IC器件，其中所述第一材料包括铜。
4.根据权利要求1所述的IC器件，其中所述第二材料包括银。
5.根据权利要求1所述的IC器件，其中所述多个键合线中的每个键合线包括所述第一材料。
6.根据权利要求1所述的IC器件，其中所述多个键合线中的每个键合线包括铜。
7.根据权利要求1所述的IC器件，其中每个未镀制的远端在100微米到300微米的范围中延伸。
8.根据权利要求1所述的IC器件，其中每个镀制的键合线部分端在350微米到550微米的范围中延伸。
9.根据权利要求1所述的IC器件，其中每个引线具有无开口的连续形状。
10.一种集成电路IC器件，包括：
IC裸片；
多个引线，每个引线包括：
未镀制的近端，包括铜，
未镀制的远端，包括铜，以及
镀制的键合线部分，在所述近端和所述远端之间并且包括铜和铜上的银镀层；
多个键合线，每个键合线在所述IC裸片和相应的引线的所述镀制的键合线部分之间延伸；
包封材料，包围所述IC裸片和多个键合线使得每个引线的所述未镀制的近端和所述镀制的键合线部分被所述包封材料覆盖。
11.根据权利要求10所述的IC器件，其中每个引线进一步包括在所述镀制的键合线部分和所述未镀制的远端之间的未镀制的中间部分；并且其中所述包封材料还覆盖每个引线的所述未镀制的中间部分。
12.根据权利要求10所述的IC器件，其中所述多个键合线中的每个键合线包括铜。
13.根据权利要求10所述的IC器件，其中每个未镀制的远端在100微米到300微米的范围中延伸。
14.根据权利要求10所述的IC器件，其中每个镀制的键合线部分端在350微米到550微米的范围中延伸。
15.根据权利要求10所述的IC器件，其中每个引线具有无开口的连续形状。
16.一种用于制作集成电路IC器件的方法，包括：
形成多个引线，每个引线包括：
未镀制的近端，包括第一材料，
未镀制的远端，包括所述第一材料，以及
镀制的键合线部分，在所述近端和所述远端之间并且包括所述第一材料和所述第一材料上的第二材料的镀层；
将多个键合线耦合到IC裸片和所述多个引线，使得每个键合线在所述IC裸片和相应引线的所述镀制的键合线部分之间延伸；
形成包封材料以包围所述IC裸片和所述多个键合线，使得每个引线的所述未镀制的近端和所述镀制的键合线部分被所述包封材料覆盖。
17.根据权利要求16所述的方法，其中每个引线被形成为具有在所述镀制的键合线部分和所述未镀制的远端之间的未镀制的中间部分；并且其中所述包封材料被形成为覆盖每个引线的所述未镀制的中间部分。
18.根据权利要求16所述的方法，其中所述第一材料包括铜。
19.根据权利要求16所述的方法，其中所述第二材料包括银。
20.根据权利要求16所述的方法，其中所述多个键合线中的每个键合线包括所述第一材料。
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