CN105679845A - Method for reducing cost of crystalline silicon solar cell and improving efficiency - Google Patents
Method for reducing cost of crystalline silicon solar cell and improving efficiency Download PDFInfo
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- CN105679845A CN105679845A CN201510439391.1A CN201510439391A CN105679845A CN 105679845 A CN105679845 A CN 105679845A CN 201510439391 A CN201510439391 A CN 201510439391A CN 105679845 A CN105679845 A CN 105679845A
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- 238000007747 plating Methods 0.000 claims abstract description 41
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052802 copper Inorganic materials 0.000 claims abstract description 39
- 239000010949 copper Substances 0.000 claims abstract description 39
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 239000004332 silver Substances 0.000 claims abstract description 16
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 74
- 239000007788 liquid Substances 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 32
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 32
- 230000008021 deposition Effects 0.000 claims description 27
- 239000011241 protective layer Substances 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 25
- 230000004913 activation Effects 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 230000005611 electricity Effects 0.000 claims description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 230000003667 anti-reflective effect Effects 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 claims description 8
- 239000012188 paraffin wax Substances 0.000 claims description 8
- 239000001117 sulphuric acid Substances 0.000 claims description 8
- 235000011149 sulphuric acid Nutrition 0.000 claims description 8
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000007751 thermal spraying Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000007650 screen-printing Methods 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910000510 noble metal Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 18
- 239000000047 product Substances 0.000 description 6
- 238000007639 printing Methods 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000013083 solar photovoltaic technology Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a method for reducing the cost of a crystalline silicon solar cell and improving the efficiency. The method is a technology for preparing a front grid line electrode by a copper plating method and replacing a noble metal silver of a traditional grid line with a metal copper, so that the target of reducing the cost is achieved. Meanwhile, fabrication of a fine grid line is not restricted by a screen printing technique, so that the width of the fine grid line can be reduced; the light shading area of the front surface is reduced; the current is improved; and the efficiency of the cell is improved.
Description
Technical field
The present invention relates to a kind of crystal silicon solar batteries cost that reduces and put forward high efficiency method, belong to solar-photovoltaic technology field.
Background technology
In the face of global energy crisis, solar photovoltaic technology has become as the new hot-spot for development of semicon industry. Crystal silicon solar batteries manufacture is divided into the operations such as making herbs into wool/cleaning, diffusion, etching/rear cleaning, PECVD plated film, silk screen printing, sintering, testing, sorting. And traditional silk-screened technique needs expensive silver slurry as the conductive material in front, need high-temperature process to make slurry burn the antireflective silicon nitride film in front after printing simultaneously.
Screen printing technique is the technology that in current crystal silicon solar batteries industry, most popular a kind of collected current forms battery. Its principle is adopt silver slurry as the conductive material in front, and high-temperature process makes silver slurry be burnt by the silicon nitride antireflection layer in front, allows silver paste contact with silicon substrate, forms Ohmic contact, collected current. But, due to technical reason, thin grid line printing to the width of collected current can only be about 40um by screen printing technique at present. Consider to need abundant collected current, thin grid line number more (about 100), so can cause bigger shading-area; Meanwhile, the thermal coefficient of expansion of silicon substrate and back surface field (being mainly composed of aluminum) differs, and can cause the warpage of battery when high temperature sintering, easily causes the broken of cell piece and splits with the hidden of matrix, reduces properties of product, improve production cost. Still further aspect, needs when collecting front-side current to use expensive argent, causes that the production cost of crystal-silicon battery slice remains high (half that silver slurry cost accounts for crystal silicon battery production cost) always.
Summary of the invention
It is an object of the invention to provide a kind of crystal silicon solar batteries cost that reduces and put forward high efficiency method, the method is the surface heat covering layer protecting film at reflectance coating, film is prepared grid line figure to replace screen printing technique, front gate line electrode is prepared in electricity consumption copper coating again, the technology of the metallic copper of, earth rich reserves cheap by a kind of use cost tradition grid line noble silver as an alternative, reduces the purpose of cost; Meanwhile, prepare grid line figure not by the restriction of screen printing technique, thin grid line width can be reduced, reduce the shading-area in front, improve electric current, and then improve the efficiency of battery.
A kind of crystal silicon solar batteries cost that reduces puies forward high efficiency method, comprises the following steps:
At the silicon nitride film needing crystal silicon solar batteries front to be processed deposition to have antireflective effect, back up has aluminum back surface field and back electrode;
(1) covered with protective film:
The surface heat having silicon nitride anti-reflecting film in deposition covers layer protecting film, the requirement according to front gate line figure, obtains front gate line figure on protecting film;
(2) on protecting film, grid line figure is prepared:
The region of unprotect film protection is corroded, the silicon nitride anti-reflecting film in this region is removed, the Si matrix making this region is exposed out, obtain front gate line circuitous pattern, wherein, protecting film has corrosion resistant component, can stop corrosive liquid in the process of corroding silicon nitride, protects the silicon nitride film under protected film overlay area not to be corroded;
(3) preparation conduction grid line:
The Palladous chloride. activation solution of the front face room temperature of product that will obtain in back, a series of activation point is formed at exposed Si matrix surface, hydrochloric acid and Fluohydric acid. is used to control 2 ~ 3 by the pH value of activation solution, activationary time is 20 ~ 60s, front face nickel-plating liquid under room temperature, on one layer of nickel barrier layer of substrate deposit, hydrochloric acid is used to control 3.5 ~ 4.5 by the pH value of nickel-plating liquid, time is 120 ~ 180s, thickness is 2 ~ 4um, under the guiding of electricity, front face copper plating bath under room temperature, form conductive copper layer over the barrier layer, sulphuric acid is used to control 3 ~ 4 by the pH value of copper plating bath, time is 20 ~ 30min, thickness is 20 ~ 30um,
(4) protecting film is removed:
Striping liquid is used to be removed by protecting film;
(5) deposition oxidation resistant protective layer:
Front face nickel-plating liquid under room temperature, deposits one layer of oxide protective layer on conductive copper layer surface, and the time is 60 ~ 100s, and thickness is 1 ~ 2um or deposits one layer of silver layer as protective layer under light with the guiding of electricity, and the time is 50 ~ 80s, and thickness is 0.5 ~ 1.5um.
A kind of crystal silicon solar batteries cost that reduces puies forward high efficiency method, comprises the following steps:
At the silicon nitride film needing crystal silicon solar batteries front to be processed deposition to have antireflective effect, back up has aluminum back surface field and back electrode;
(1) covered with protective film:
By the thermal spraying mode black paraffin silicon nitride film surface spraying 70 DEG C, using HF laser to slot in paraffin surface, Grooving patterns is the front gate line figure of needs, and the width of fluting can be regulated by the diameter of laser beam;
(2) on protecting film, grid line figure is prepared:
Battery front side contacting volume concentration is the Fluohydric acid. corrosive liquid of 10 ~ 30%, is removed by the silicon nitride film at fluting place, exposes the silicon substrate under film, obtains front gate line figure, and technique is taken out after completing and cleaned;
(3) preparation conduction grid line:
The Palladous chloride. activation solution of the front face room temperature of product that will obtain in back, a series of activation point is formed on exposed silicon substrate surface, hydrochloric acid and Fluohydric acid. is used to control 2 ~ 3 by the pH value of activation solution, activationary time is 20 ~ 60s, front face nickel-plating liquid under room temperature, on one layer of nickel barrier layer of substrate deposit, hydrochloric acid is used to control 3.5 ~ 4.5 by the pH value of nickel-plating liquid, time is 120 ~ 180s, thickness is 2 ~ 4um, under the guiding of electricity, front face copper plating bath under room temperature, form conductive copper layer over the barrier layer, sulphuric acid is used to control 3 ~ 4 by the pH value of copper plating bath, time is 20 ~ 30min, thickness is 20 ~ 30um, technique is taken out after completing and is cleaned,
(4) protecting film is removed:
Using chloroform to be removed by protecting film, technique is taken out after completing and is cleaned;
(5) deposition oxidation resistant protective layer:
Battery front side contact nickel-plating liquid under room temperature, deposits one layer of oxide protective layer on conductive copper layer surface, and the time is 60 ~ 100s; thickness is 1 ~ 2um or deposits one layer of silver layer as protective layer under light with the guiding of electricity; time is 50 ~ 80s, and thickness is 0.5 ~ 1.5um, and technique takes out cleaning, drying after completing.
A kind of crystal silicon solar batteries cost that reduces puies forward high efficiency method, comprises the following steps:
At the silicon nitride film needing crystal silicon solar batteries front to be processed deposition to have antireflective effect, back up has aluminum back surface field and back electrode;
(1) covered with protective film:
The surface of silicon nitride anti-reflecting film is had to use roller bearing press mold technique to attach one layer of dry film in deposition, press mold temperature is 120 DEG C, speed is 3.5 ~ 4m/min, put in ultraviolet or shorter wavelengths of exposure machine, pattern on the film making front gate line figure just to light source, is transferred on dry film by press mold face by Graphic transitions technology;
Wherein dry film is the AP3810 dry film bought in Changxing, Guangzhou dry film company limited;
(2) on protecting film, grid line figure is prepared:
During development, using 30 DEG C, mass fraction is the Na of 0.5 ~ 2%2CO3Spray solution battery surface after exposure, after washing, battery surface is the formation of the dry film with grid line circuitous pattern structure clearly, and technique is taken out after completing and cleaned;
(3) preparation conduction grid line:
The Palladous chloride. activation solution of the front face room temperature of product that will obtain in back, a series of activation point is formed on exposed silicon substrate surface, hydrochloric acid and Fluohydric acid. is used to control 2 ~ 3 by the pH value of activation solution, activationary time is 20 ~ 60s, front face nickel-plating liquid under room temperature, on one layer of nickel barrier layer of substrate deposit, hydrochloric acid is used to control 3.5 ~ 4.5 by the pH value of nickel-plating liquid, time is 120 ~ 180s, thickness is 2 ~ 4um, under the guiding of electricity, front face copper plating bath under room temperature, form conductive copper layer over the barrier layer, sulphuric acid is used to control 3 ~ 4 by the pH value of copper plating bath, time is 20 ~ 30min, thickness is 20 ~ 30um, technique is taken out after completing and is cleaned,
(4) protecting film is removed:
Using striping liquid to be removed by protecting film, technique is taken out after completing and is cleaned;
Wherein striping liquid is the AP38 series striping liquid bought in Changxing, Guangzhou dry film company limited;
(5) deposition oxidation resistant protective layer:
Front face nickel-plating liquid under room temperature, deposits one layer of oxide protective layer on conductive copper layer surface, and the time is 60 ~ 100s; thickness is 1 ~ 2um or deposits one layer of silver layer as protective layer under light with the guiding of electricity; time is 50 ~ 80s, and thickness is 0.5 ~ 1.5um, and technique takes out cleaning, drying after completing.
It is an advantage of the current invention that:
1, the surface of silicon nitride anti-reflecting film is had to cover lid layer paraffin or dry film in deposition, grid line figure is formed at paraffin surface fluting with HF laser, or by Graphic transitions technology, the pattern on the film making front gate line figure is transferred on dry film, the grid line width that both approaches prepares can reach 20 microns, well below the grid line width of 40 microns that screen printing technique prepares, present invention reduces thin grid line width, reduce the shading-area in front, improve electric current, and then improve the efficiency of battery.
2, the technology of the metallic copper of, earth rich reserves cheap by a kind of use cost tradition grid line noble silver as an alternative, reduces the purpose of cost.
Accompanying drawing explanation
In conjunction with accompanying drawing, the present invention is described further with specific embodiments.
Fig. 1 is the semi-finished product generalized section that deposition has silicon nitride anti-reflecting film;
Fig. 2 is the sample cross-section schematic diagram covering protecting film;
Fig. 3 is the generalized section after being shown on protecting film by front gate line figure;
Fig. 4 is the generalized section of the front gate line figure obtained after removing non-protection area silicon nitride film;
Fig. 5 is the generalized section after substrate deposit activates point;
Fig. 6 is the generalized section after deposition nickel;
Fig. 7 is the generalized section after deposition copper;
Fig. 8 is the generalized section after removing protecting film;
Fig. 9 is the generalized section after deposition oxidation resistant protective layer.
Accompanying drawing labelling: A is silicon nitride anti-reflecting film; B is silicon substrate; C is aluminum back surface field; D is backplate; E is protecting film; F is the grid line on protecting film; G is the grid line of silicon nitride film after corrosion; H is that palladium activates point; J is nickel protection layer; K is conductive copper layer; L is oxidation resistant protective layer.
Detailed description of the invention
In order to be that those skilled in the art are better understood from patent formula of the present invention, and make the above-mentioned purpose of the present invention, feature, and advantage to become apparent, be described in further details below in conjunction with embodiment.
Embodiment 1:
A kind of crystal silicon solar batteries cost that reduces puies forward high efficiency method, comprises the following steps:
As it is shown in figure 1, at the silicon nitride film needing crystal silicon solar batteries front to be processed deposition to have antireflective effect, back up has aluminum back surface field and back electrode;
(1) covered with protective film:
By the thermal spraying mode black paraffin silicon nitride film surface spraying 70 DEG C, form Fig. 2 structure, HF laser is used to slot in paraffin surface, form the structure graph shown in Fig. 3, in the present embodiment, the diameter of laser beam is 20um, and Grooving patterns is the front gate line figure of needs, and the width of fluting can be regulated by the diameter of laser beam;
(2) on protecting film, grid line figure is prepared:
Battery front side contacting volume concentration is the Fluohydric acid. corrosive liquid of 10 ~ 30%, is removed by the silicon nitride film at fluting place, exposes the silicon substrate under film, obtains front gate line figure, and technique is taken out after completing and cleaned, and forms the structure graph shown in Fig. 4;
(3) preparation conduction grid line:
The Palladous chloride. activation solution of the front face room temperature of product that will obtain in back, a series of activation point is formed on exposed silicon substrate surface, hydrochloric acid and Fluohydric acid. is used to control 2 ~ 3 by the pH value of activation solution, activationary time is 20 ~ 60s, form Fig. 5, front face nickel-plating liquid under room temperature, on one layer of nickel barrier layer of substrate deposit, hydrochloric acid is used to control 3.5 ~ 4.5 by the pH value of nickel-plating liquid, time is 120 ~ 180s, thickness is 2 ~ 4um, form Fig. 6, under the guiding of electricity, front face copper plating bath under room temperature, form conductive copper layer over the barrier layer, sulphuric acid is used to control 3 ~ 4 by the pH value of copper plating bath, time is 20 ~ 30min, thickness is 20 ~ 30um, technique is taken out after completing and is cleaned, form Fig. 7,
(4) protecting film is removed:
Using chloroform to be removed by protecting film, technique is taken out after completing and is cleaned, and forms Fig. 8;
(5) deposition oxidation resistant protective layer:
Battery front side contact nickel-plating liquid under room temperature; one layer of oxide protective layer is deposited on conductive copper layer surface; time is 60 ~ 100s; thickness is 1 ~ 2um or deposits one layer of silver layer as protective layer under light with the guiding of electricity; time is 50 ~ 80s; thickness is 0.5 ~ 1.5um, and technique takes out cleaning, drying after completing, and forms Fig. 9.
Embodiment 2:
A kind of crystal silicon solar batteries cost that reduces puies forward high efficiency method, comprises the following steps:
As it is shown in figure 1, at the silicon nitride film needing crystal silicon solar batteries front to be processed deposition to have antireflective effect, back up has aluminum back surface field and back electrode;
(1) covered with protective film:
The surface of silicon nitride anti-reflecting film is had to use roller bearing press mold technique to attach one layer of dry film in deposition, press mold temperature is 120 DEG C, speed is 3.5 ~ 4m/min, form Fig. 2, put in ultraviolet or shorter wavelengths of exposure machine, pattern on the film making front gate line figure just to light source, is transferred on dry film by press mold face by Graphic transitions technology, forms Fig. 3;
Wherein dry film is the AP3810 dry film bought in Changxing, Guangzhou dry film company limited;
(2) on protecting film, grid line figure is prepared:
During development, using 30 DEG C, mass fraction is the Na of 0.5 ~ 2%2CO3Spray solution battery surface after exposure, after washing, battery surface is the formation of the dry film with grid line circuitous pattern structure clearly, and thin grid line width is 23um, and technique is taken out after completing and cleaned, and forms Fig. 4;
(3) preparation conduction grid line:
The Palladous chloride. activation solution of the front face room temperature of product that will obtain in back, a series of activation point is formed on exposed silicon substrate surface, hydrochloric acid and Fluohydric acid. is used to control 2 ~ 3 by the pH value of activation solution, activationary time is 20 ~ 60s, form Fig. 5, front face nickel-plating liquid under room temperature, on one layer of nickel barrier layer of substrate deposit, hydrochloric acid is used to control 3.5 ~ 4.5 by the pH value of nickel-plating liquid, time is 120 ~ 180s, thickness is 2 ~ 4um, form Fig. 6, under the guiding of electricity, front face copper plating bath under room temperature, form conductive copper layer over the barrier layer, sulphuric acid is used to control 3 ~ 4 by the pH value of copper plating bath, time is 20 ~ 30min, thickness is 20 ~ 30um, technique is taken out after completing and is cleaned, form Fig. 7,
(4) protecting film is removed:
Using striping liquid to be removed by protecting film, technique is taken out after completing and is cleaned, and forms Fig. 8;
Wherein striping liquid is the AP38 series striping liquid bought in Changxing, Guangzhou dry film company limited;
(5) deposition oxidation resistant protective layer:
Front face nickel-plating liquid under room temperature; one layer of oxide protective layer is deposited on conductive copper layer surface; time is 60 ~ 100s; thickness is 1 ~ 2um or deposits one layer of silver layer as protective layer under light with the guiding of electricity; time is 50 ~ 80s; thickness is 0.5 ~ 1.5um, and technique takes out cleaning, drying after completing, and forms Fig. 9.
Comparative example:
Traditional silk-screened fabrication techniques crystal silicon solar batteries method:
Making herbs into wool/cleaning → diffusion → etching/rear cleaning → PECVD plated film → back electrode printing → back of the body electric field printing → front electrode printing → high temperature sintering → testing, sorting.
Comparative result:
From upper table result it can be seen that a kind of crystal silicon solar batteries cost that reduces of the present invention carries the prepared solaode of high efficiency method compared with general traditional silk-screened technology, not only reducing production cost, battery efficiency also has a certain upgrade.
Claims (4)
1. a reduction crystal silicon solar batteries cost puies forward high efficiency method, it is characterised in that: comprise the following steps:
(1) covered with protective film; (2) on protecting film, grid line figure is prepared; (3) preparation conduction grid line; (4) protecting film is removed; (5) deposition oxidation resistant protective layer.
2. a reduction crystal silicon solar batteries cost puies forward high efficiency method, it is characterised in that: comprise the following steps:
At the silicon nitride film needing crystal silicon solar batteries front to be processed deposition to have antireflective effect, back up has aluminum back surface field and back electrode;
(1) covered with protective film:
The surface heat having silicon nitride anti-reflecting film in deposition covers layer protecting film, the requirement according to front gate line figure, obtains front gate line figure on protecting film;
(2) on protecting film, grid line figure is prepared:
The region of unprotect film protection is corroded, the silicon nitride anti-reflecting film in this region is removed, the Si matrix making this region is exposed out, obtain front gate line circuitous pattern, wherein, protecting film has corrosion resistant component, can stop corrosive liquid in the process of corroding silicon nitride, protects the silicon nitride film under protected film overlay area not to be corroded;
(3) preparation conduction grid line:
The Palladous chloride. activation solution of the front face room temperature of product that will obtain in back, a series of activation point is formed at exposed Si matrix surface, hydrochloric acid and Fluohydric acid. is used to control 2 ~ 3 by the pH value of activation solution, activationary time is 20 ~ 60s, front face nickel-plating liquid under room temperature, on one layer of nickel barrier layer of substrate deposit, hydrochloric acid is used to control 3.5 ~ 4.5 by the pH value of nickel-plating liquid, time is 120 ~ 180s, thickness is 2 ~ 4um, under the guiding of electricity, front face copper plating bath under room temperature, form conductive copper layer over the barrier layer, sulphuric acid is used to control 3 ~ 4 by the pH value of copper plating bath, time is 20 ~ 30min, thickness is 20 ~ 30um,
(4) protecting film is removed:
Striping liquid is used to be removed by protecting film;
(5) deposition oxidation resistant protective layer:
Front face nickel-plating liquid under room temperature, deposits one layer of oxide protective layer on conductive copper layer surface, and the time is 60 ~ 100s, and thickness is 1 ~ 2um or deposits one layer of silver layer as protective layer under light with the guiding of electricity, and the time is 50 ~ 80s, and thickness is 0.5 ~ 1.5um.
3. a kind of crystal silicon solar batteries cost that reduces as claimed in claim 1 puies forward high efficiency method, it is characterised in that: comprise the following steps:
At the silicon nitride film needing crystal silicon solar batteries front to be processed deposition to have antireflective effect, back up has aluminum back surface field and back electrode;
(1) covered with protective film:
By the thermal spraying mode black paraffin silicon nitride film surface spraying 70 DEG C, using HF laser to slot in paraffin surface, Grooving patterns is the front gate line figure of needs, and the width of fluting can be regulated by the diameter of laser beam;
(2) on protecting film, grid line figure is prepared:
Battery front side contacting volume concentration is the Fluohydric acid. corrosive liquid of 10 ~ 30%, is removed by the silicon nitride film at fluting place, exposes the silicon substrate under film, obtains front gate line figure, and technique is taken out after completing and cleaned;
(3) preparation conduction grid line:
The Palladous chloride. activation solution of the front face room temperature of product that will obtain in back, a series of activation point is formed on exposed silicon substrate surface, hydrochloric acid and Fluohydric acid. is used to control 2 ~ 3 by the pH value of activation solution, activationary time is 20 ~ 60s, front face nickel-plating liquid under room temperature, on one layer of nickel barrier layer of substrate deposit, hydrochloric acid is used to control 3.5 ~ 4.5 by the pH value of nickel-plating liquid, time is 120 ~ 180s, thickness is 2 ~ 4um, under the guiding of electricity, front face copper plating bath under room temperature, form conductive copper layer over the barrier layer, sulphuric acid is used to control 3 ~ 4 by the pH value of copper plating bath, time is 20 ~ 30min, thickness is 20 ~ 30um, technique is taken out after completing and is cleaned,
(4) protecting film is removed:
Using chloroform to be removed by protecting film, technique is taken out after completing and is cleaned;
(5) deposition oxidation resistant protective layer:
Battery front side contact nickel-plating liquid under room temperature, deposits one layer of oxide protective layer on conductive copper layer surface, and the time is 60 ~ 100s; thickness is 1 ~ 2um or deposits one layer of silver layer as protective layer under light with the guiding of electricity; time is 50 ~ 80s, and thickness is 0.5 ~ 1.5um, and technique takes out cleaning, drying after completing.
4. a kind of crystal silicon solar batteries cost that reduces as claimed in claim 1 puies forward high efficiency method, it is characterised in that: comprise the following steps:
At the silicon nitride film needing crystal silicon solar batteries front to be processed deposition to have antireflective effect, back up has aluminum back surface field and back electrode;
(1) covered with protective film:
The surface of silicon nitride anti-reflecting film is had to use roller bearing press mold technique to attach one layer of dry film in deposition, press mold temperature is 120 DEG C, speed is 3.5 ~ 4m/min, put in ultraviolet or shorter wavelengths of exposure machine, pattern on the film making front gate line figure just to light source, is transferred on dry film by press mold face by Graphic transitions technology;
Wherein dry film is the AP3810 dry film bought in Changxing, Guangzhou dry film company limited;
(2) on protecting film, grid line figure is prepared:
During development, using 30 DEG C, mass fraction is the Na of 0.5 ~ 2%2CO3Spray solution battery surface after exposure, after washing, battery surface is the formation of the dry film with grid line circuitous pattern structure clearly, and technique is taken out after completing and cleaned;
(3) preparation conduction grid line:
The Palladous chloride. activation solution of the front face room temperature of product that will obtain in back, a series of activation point is formed on exposed silicon substrate surface, hydrochloric acid and Fluohydric acid. is used to control 2 ~ 3 by the pH value of activation solution, activationary time is 20 ~ 60s, front face nickel-plating liquid under room temperature, on one layer of nickel barrier layer of substrate deposit, hydrochloric acid is used to control 3.5 ~ 4.5 by the pH value of nickel-plating liquid, time is 120 ~ 180s, thickness is 2 ~ 4um, under the guiding of electricity, front face copper plating bath under room temperature, form conductive copper layer over the barrier layer, sulphuric acid is used to control 3 ~ 4 by the pH value of copper plating bath, time is 20 ~ 30min, thickness is 20 ~ 30um, technique is taken out after completing and is cleaned,
(4) protecting film is removed:
Using striping liquid to be removed by protecting film, technique is taken out after completing and is cleaned;
Wherein striping liquid is the AP38 series striping liquid bought in Changxing, Guangzhou dry film company limited;
(5) deposition oxidation resistant protective layer:
Front face nickel-plating liquid under room temperature, deposits one layer of oxide protective layer on conductive copper layer surface, and the time is 60 ~ 100s; thickness is 1 ~ 2um or deposits one layer of silver layer as protective layer under light with the guiding of electricity; time is 50 ~ 80s, and thickness is 0.5 ~ 1.5um, and technique takes out cleaning, drying after completing.
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| CN111584654A (en) * | 2020-03-31 | 2020-08-25 | 天津爱旭太阳能科技有限公司 | Method for preparing crystalline silicon solar cell electrode |
| CN112086525A (en) * | 2020-09-07 | 2020-12-15 | 隆基绿能科技股份有限公司 | Solar cell and manufacturing method thereof |
| CN115020525A (en) * | 2022-07-12 | 2022-09-06 | 晶澳（扬州）太阳能科技有限公司 | Back junction solar cell and preparation method thereof |
| CN115207161A (en) * | 2022-07-14 | 2022-10-18 | 通威太阳能（安徽）有限公司 | Backwashing equipment |
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| CN111584654A (en) * | 2020-03-31 | 2020-08-25 | 天津爱旭太阳能科技有限公司 | Method for preparing crystalline silicon solar cell electrode |
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