CN103726088A - Improved copper electroplating method of crystal silicon solar battery - Google Patents
Improved copper electroplating method of crystal silicon solar battery Download PDFInfo
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Abstract
The invention relates to an improved copper electroplating method of a crystal silicon solar battery. The silicon nitride layer on the surface of the conventional battery has many pin holes, and in the process of preparing copper (Cu) electrodes by an electroplating process, the Cu electrodes are easy to be adsorbed to the pin holes of the silicon nitride layer to lead to blur in appearance of the solar battery. Meanwhile, the copper electrodes are easy to seep into the silicon nitride layer and a silicon-based interface through the pin holes, and Cu as a deep energy level impurity with very fast diffusion rate entering into a pn junction affects the service life and generating efficiency of the battery, so that the reliability of the battery is reduced. A protective film covers the surface of the silicon nitride layer before Cu electroplating to prevent Cu from being adsorbed and seeped in the electroplating process, so that the reliability of the battery is guaranteed while the blur in appearance of the solar battery is avoided. The protective film can be removed after Cu electrode electroplating. According to the technological requirements of the crystal silicon batteries, the protective film can be still remained if parameters of the battery such as optical and electrical properties and reliability are not affected.
Description
Technical field
The present invention relates to a kind of manufacture craft of crystal silicon solar batteries, particularly relate to a kind of improved crystal silicon solar batteries copper electro-plating method.
Background technology
Along with the day of global resources is becoming tight, sun power with pollution-free, mechanical rotating part, easy maintenance, can unmanned, the extensive attention of exclusive advantage the is subject to countries in the world such as the construction period is short, scale is random, can combine with buildings easily, the market space is large, during existing numerous major companies put into the research and development of solar cell and produce in the world.With technical development in recent ten years, though the application cost of silicon solar cell declines to a great extent, for meeting the needs of widespread use in real life, be necessary further to reduce manufacturing cost, further improve the turnover ratio of silicon solar simultaneously.
Affecting one of silicon solar cell cost principal element is that electrode fabrication material is mainly Ag, and Ag price is more expensive.Electroconductibility and the Ag of Cu are close, and earth mineral products margin is 2000 times of Ag, and price is only 1% of Ag, therefore select Cu will greatly reduce battery manufacture cost as electrode of solar battery; The conventional silicon nitride layer in crystal silicon battery surface, as antireflection layer, improves photoelectric transformation efficiency, and provides protection and passivation to silicon chip.Yet, in traditional crystal silicon battery, use board-like PECVD(plasma enhanced chemical vapor deposition method) and after plating silicon nitride layer, more easily cause surface detail while carrying out Cu electrode plating technique; Though and as used tubular type PECVD silicon nitride layer that more board-like PECVD plates more fine and close, but in industrial production process, easily make silicon nitride layer contain more hole (pin holes), when carrying out Cu electrode plating thereafter, Cu is very easily adsorbed in silicon nitride layer hole and infiltrates to silicon nitride layer and Si base interface, affects life-span and the generating efficiency of battery.Cu is deep-level impurity, and velocity of diffusion is very fast, enters and plays deathnium effect after semiconductor material, thereby promote the compound reduction of semiconductor carriers minority carrier lifetime; Cu scattering current carrier, declines carrier mobility simultaneously, reduces conductivity.In addition, under the traditional technology in the protection of unprotect film, use laser straight to be connected on silicon nitride layer surface and carry out high temperature etching, at battery, carve edge, grid line position and be prone to non-crystalline state impurity, affect battery reliability.
Summary of the invention
In order to solve above-mentioned the deficiencies in the prior art part, the object of the present invention is to provide a kind of improved crystal silicon battery copper electro-plating method, the method is based on protective membrane technique, utilization is coating protective film on the surfaces nitrided silicon layer of crystal silicon battery, silicon nitride layer for different process processing, both can prevent after board-like pecvd process, Cu electroplates and causes cell piece surface to be grown dim; Also can prevent after tubular type pecvd process, when Cu electroplates, Cu enters hole and infiltrates the reduction that causes battery performance and reliability in pn knot; Adopt wet chemical engraving method etching, while also having avoided laser burn there is the problem of non-crystalline state impurity in grid line edge.
The invention provides a kind of improved crystal silicon battery copper electro-plating method, technical scheme is as follows:
(1) covered with protective film: form mask at the Si primary surface that deposits silicon nitride layer, described mask is as protective membrane of the present invention; Described protective membrane is with windowing; According to crystal silicon solar batteries upper strata, make the requirement of gate line electrode, set grid line circuitous pattern, described in window position corresponding to grid line position to be etched; Described protective membrane presents grid line circuitous pattern;
Etching: use wet etching to remove the window silicon nitride layer of position of protective membrane, form grid line district at described Si primary surface;
Covering barrier layer: cover the non-Cu metal of one deck in described grid line district, as the blocking layer of Cu;
Electroplate Cu: carry out Cu plating, on blocking layer, form Cu electrode.
Wherein, described protective membrane contains composition against corrosion, and in described etching process, protective membrane can stop etching liquid, and the silicon nitride layer under its covering can retain in etching.
(2) according to (1) described technical scheme, described protective membrane is used photochromics, first at silicon nitride layer surface integral, cover this photochromics, then on its surface according to grid line circuit pattern exposure, development removes the photochromics formation of grid line to be etched position and windows, and now protective membrane presents grid line circuitous pattern; Preferably, described protective membrane is dry film, uses pressed film method to cover, further preferred, and described dry film is the mixing photoresists that protective membrane polyethylene, photoresist film and carrier polyester film form; Preferred as another, described protective membrane is ink type photoresists, uses silk screen print method to cover.
(3), according to (1) described technical scheme, use the ink-jet technology grid line position to be etched on described silicon nitride layer surface with exterior domain direct spraying protective membrane; In this scheme, described protective membrane can be selected non-photosensitive materials.
(4) according to (1) to (3) described technical scheme, wherein said protective membrane is acid resistance, and described etching liquid is used the hydrofluoric acid of 10%-35%.
(5), according to (1) to (4) described technical scheme, it is one of following that wherein said blocking layer comprises: Ni, Cr, W, Ti, NiCr, NiW, TiW, NiMo and Co; Preferably, described plating barrier metal adopts and electroplates or electroless plating.
(6) according to (1) to (5) described technical scheme, described Cu electrode height is 5-45 μ m, and width is 10-200 μ m.
(7) according to (1) to (6) described technical scheme, at the anti oxidation layer of the surface coverage Cu of described Cu electrode contact air; Preferably, forming described anti oxidation layer method comprises one of following: electroplate Sn, electroless plating Sn, electroplate Ag, spraying and apply OSP.
(8), according to (7) described technical scheme, when wherein said anti oxidation layer adopts OSP or electroless plating Sn, Cu electrode surface carries out microetch pre-treatment; Preferably, described OSP anti oxidation layer, Cu electrode microetch thickness is 0.5-2.5 μ m, the OSP anti oxidation layer thickness of formation is 0.1-1 μ m.
(9) according to (7) described technical scheme, when wherein said plating or electroless plating anti oxidation layer, described Si base is treated surfacing maintenance level, one side contact plating solution.
(10), according to (1) to (9) described technical scheme, wherein said when covering blocking layer and/or electroplating Cu, described Si base is treated surfacing maintenance level, one side contact plating solution.
(11), according to (1) to (10) described technical scheme, wherein said plating blocking layer and/or plating Cu carry out under visible light catalytic.
(12), according to (1) to (11) described technical scheme, after wherein Cu electrode plating completes, remove protective membrane.
(13) according to (12) described technical scheme, wherein said removal protective membrane is used following one or more combined method: striping liquid, Virahol, acetone, ultrasonic wave, heating, water clean and oxygen plasma bombardment.
In sum; use crystal silicon battery copper electro-plating method provided by the invention, covered with protective film on the surfaces nitrided silicon layer of crystal silicon battery plays effective isolation action of silicon nitride layer and Cu in Cu electroplating process; improve crystal silicon battery manufacture craft level, guaranteed battery performance and reliability.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Fig. 1 is the sample cross-section structural representation to be processed that deposits silicon nitride film;
Fig. 2 is the sample cross-section structural representation that the present invention covers whole layer protective membrane material;
Fig. 3 is that the present invention is with the sample cross-section structural representation of the protective membrane of windowing;
Fig. 4 is sample cross-section structural representation after etching of the present invention;
Fig. 5 is battery cross-sectional view behind plating of the present invention blocking layer;
Fig. 6 is that the present invention electroplates battery cross-sectional view after Cu;
Fig. 7 is that the present invention electroplates the battery cross-sectional view of removing protective membrane after Cu;
Fig. 8 is that the present invention forms battery cross-sectional view after anti oxidation layer.
In figure: 1.Si base; 2. carry on the back electric field; 3. back electrode; 4. silicon nitride layer; 5. protective membrane; 5a. windows; 6. grid line district; 7. blocking layer; 8.Cu layer; 9. anti oxidation layer.
Embodiment
Below provide the embodiment of the inventive method:
As shown in Figure 1, crystalline silicon sample main body to be processed is Si base, and front deposits silicon nitride layer, and the back side is the sample of Al aluminum back surface field.
1. in the surface coverage of silicon nitride layer, there is the mask of windowing as protective membrane, the corresponding grid line to be etched position, position of windowing.Method is as follows:
(1) as shown in Figure 2, first at the photosensitive protective membrane material of the whole layer of described sample silicon nitride layer surface coverage, then sample is put into exposure machine and expose, by development, remove grid line guarded by location mould material, form described with the protective membrane of windowing; The protective membrane using in this scheme is dry film or other photochromics, and covered with protective film adopts pressed film method, coating process or silk screen print method.
Use the technique of pressed film method: will put into film laminator and carry out positive mask; Preferably, protective membrane is used the acid resistance dry film being comprised of protective membrane polyethylene, photoresist film and carrier polyester film, and wherein carrier polyester film act as the oxidation that prevents photoresist film, after dry film exposure, removes; Dry film passes through heating and Wafer bonding in film laminator.
Use the technique of silk screen printing: use and melt shape colloid, as ink type photoresists, use traditional method for printing screen at sample silicon nitride layer surface coverage photoresists.
Also can use direct coating process to cover photochromics.
Exposure and developing process: with protective membrane, use the situation of dry film to be illustrated.After dry film has covered, sample is placed in to exposure machine to expose, this process is used figure transfer techniques, at exposure machine middle-ultraviolet lamp (or less wavelength), pass through the film of pre-rendered good grid line figure, on film film, there is graphics field ultraviolet ray not pass through, do not have the region ultraviolet ray of figure to pass through, ultraviolet ray is radiated on dry film by the film, causes dry film reaction.Dry film can be divided into positive glue and negative glue, and positive glue is that solidify in territory, non-exposed area, and wash with developing solution exposure area; Negative glue is that solidify exposure area, and wash with developing solution in territory, non-exposed area; The negative glue dry film that dry film use cost of the present invention is comparatively cheap.During development, use the Na of 0.3-4%
2cO
3or the sample surfaces of NaOH spray solution after exposure, after clear water washing, sample surfaces has formed has the protective membrane of grid line circuitous pattern structure clearly.
(2) during covered with protective film, according to default grid line figure, use ink-jet technology in default grid line position with exterior domain direct spraying protective membrane material, because not needing to expose and developing process, described protective membrane can be non-photosensitive materials.
Described ink-jet technology can be selected as thermal-induction type ink-jet technology.Using described protective membrane material as ink, utilize a thin film resistor, in ink ejection district, by the ink heating that is less than 0.5%, form bubble.This bubble (is less than 10 μ m) at a terrific speed, and expansion is come, and forces drops out from nozzles ejection.Bubble continues into long number microsecond again and just disappears and get back on resistor, and when bubble disappears, the ink of nozzle is just retracted, and then surface tension can produce suction, and the new ink replenishing of drawing is in ink ejection district.
As shown in Figure 3, on silicon nitride layer, covered with the protective membrane of windowing.
2. according to protective membrane grid line pattern etch.The sample surfaces that has covered described protective membrane is immersed in etching liquid, by default grid line circuitous pattern, carries out wet etching, remove grid line position silicon nitride layer, form grid line district, as shown in Figure 4; Etching reaction in technical solution of the present invention carries out in acid solution, preferred, uses the hydrofluoric acid of 10%-35% as etching liquid; protective membrane is used acid resistance material; as use aforementioned acid resistance dry film, in etching liquid, non-grid line district silicon nitride layer is retained because of the protection of dry film.
3. plating blocking layer, grid line district.As shown in Figure 5, at the metal of the non-Cu of sample grid line district plating one deck.This metal level can stop the contact of Cu YuSiJi grid line district when electroplating Cu.Blocking layer metal used should have good electroconductibility, reduces contact resistance, and optional barrier material is Ni, Cr, W, Ti, NiCr, NiW, TiW, NiMo or Co.Solution and coating method can be used to be electroplated or electroless plating, take and uses the situation of Ni as example is illustrated, and when plating or electroless plating, all can be chosen under photochemical catalysis and carry out, and visible light source is used in photochemical catalysis, and light source can be white light, can be also monochromatic visible light; Sample can adopt traditional vertical modes of emplacement, is immersed in plating solution completely; Also can adopt horizontal positioned mode, only sample protection face contact plating liquid.
Table 1: blocking layer process combination
| Array mode | Cushioning layer material | Plating method | Sample modes of emplacement | Photochemical catalysis |
| 1 | Ni | Electroplate | Vertically | Nothing |
| 2 | Ni | Electroplate | Vertically | Have |
| 3 | Ni | Electroplate | Level | Nothing |
| 4 | Ni | Electroplate | Level | Have |
| 5 | Ni | Electroless plating | Vertically | Nothing |
| 6 | Ni | Electroless plating | Vertically | Have |
| 7 | Ni | Electroless plating | Level | Nothing |
| 8 | Ni | Electroless plating | Level | Have |
For simplifying, express, table 1 has provided the situation of using Ni blocking layer.The concrete steps of above-mentioned electroplating technology are:
(1) place sample, wherein, vertical modes of emplacement is: sample is placed in hanger, and tightens contact and fix; Bath temperature reaches after design temperature, and hanger is vertically put into plating tank, makes sample immerse plating solution completely, after plating finishes, needs to clean sample; Horizontal positioned mode is: sample is placed on fixture, opens vacuum suck; Sample levels is placed in to plating solution top, and the sample back side is connected with fixture, adjusts fixture feeler and changes sample apart from the height of liquid level, makes the front of sample band protective membrane touch plating solution, then turns down position by the sample 1mm left and right that declines, and its front is fully contacted with plating solution;
(2) take conductive fixture as electroplating cathode, by wire, be connected with direct supply;
(3) anode bath being immersed in plating solution is connected with direct supply by wire;
(4) power-on is implemented to electroplate, as makes photoactivation, opens light source simultaneously;
(5) reach after the process time, powered-down, takes out hanger.
The concrete steps of above-mentioned chemical plating technology are:
(1) place sample, with above-mentioned plating, place sample process;
(2), as made photoactivation, open light source simultaneously;
(3) reach after the process time, take out hanger.
4. electroplate Cu electrode.Use Cu anodic bonding positive source, with the sample on blocking layer, as negative electrode, be connected with power cathode, electroplate the grid line position formation Cu electrode after etching; Whether blocking layer is similar with electroplating, electroplate Cu and can select under photochemical catalysis, to carry out; Sample can adopt traditional vertical modes of emplacement or horizontal positioned mode.Sample after plating Cu is as Fig. 6.General Cu electrode height of electroplating can be 10-40 μ m, and width can be 10-200 μ m.Under the prerequisite that guarantees Cu electrode difficult drop-off, add large electrode depth-width ratio value, can reduce shading-area, strengthen light energy conversion efficiency.Therefore, in improved embodiment, Cu electrode height is limited in to the m into 15-30 μ, width is limited in 40-100 μ m.
5. remove protective membrane.After plating Cu electrode completes, remove the residue protective membrane on sample; Remove protective membrane method and comprise that use striping liquid, Virahol, acetone, ultrasonic wave, heating, water clean, O
2any one in plasma bombardment or multiple combination.Traditional technology removes protective membrane after etching, and technical solution of the present invention is removed protective membrane after Cu electroplates, and protective membrane plays the effect of isolation Cu in Cu electroplating process.
In the methods of the invention, as protective membrane material characteristic does not affect the parameters such as optics, electricity, reliability of battery, residue protective membrane also can retain after Cu electrode fabrication completes.
6. on Cu electrode, form anti oxidation layer to prevent anodizing, anti oxidation layer material can be used Sn, Ag or OSP.
(1) Sn anti oxidation layer adopts and electroplates or electroless plating method; Ag anti oxidation layer adopts electrochemical plating; While using above-mentioned plating or electroless plating method, sample all can be selected horizontal or vertical modes of emplacement; Before adopting electroless plating Sn anti oxidation layer, need to carry out pre-treatment, use superoxide to carry out microetch to Cu electrode surface, on Cu surface, form some uniform small holes; Then with dilute sulphuric acid, remove the CuO producing in described microetch process.
(2) OSP anti oxidation layer is used spraying method or cladding process.OSP method is on the naked Cu surface of cleaning, and growth one deck organic coating, can protect Cu surface not oxidized in normal environment.Its technical process is that oil removing, secondary washing, microetch, secondary washing, deionized water washing, film forming are air-dry, deionized water washing, dry; In above-mentioned technique, the object of microetch is to form coarse Cu face to be convenient to film forming, and general microetch thickness can be at 0.5-2.5 μ m, and under higher processing requirement, gauge control is at 1.0-1.5 μ m; In film process, adopt deionized water in case film forming liquid is polluted; PH value should be controlled between 4.0-7.0, in case rete is polluted and destroys; Its anti oxidation layer film forming thickness is generally 0.1-1 μ m, is controlled at 0.2-0.5 μ m better.
Embodiment 1: the present embodiment is a kind of improved crystal silicon battery copper electro-plating method, carries out following steps:
(1) pressed film method covered with protective film.Protective membrane is used the negative glue dry film of acid resistance, protective membrane polyethylene, photoresist film and carrier polyester film, consists of;
(2) exposure and development.Developing solution is the NaOH solution of 0.3-4%; Complete the sample state of this step as shown in Figure 3;
(3) etching.Etching liquid is the hydrofluoric acid of 10%-35%, and the time is at 2-60min; Complete the sample state of this step as shown in Figure 4;
(4) plating blocking layer.Material is Ni, adopts electrochemical plating, adds photochemical catalysis, and sample adopts horizontal positioned mode; Galvanic anode is nickel bar, electroplating temperature 35-65 ℃, electroplating time 0-500sec; Complete the sample state of this step as shown in Figure 5;
(5) electroplate Cu electrode.Add photochemical catalysis, sample adopts horizontal positioned mode; Galvanic anode is phosphor-copper bar, and electroplate liquid is sulfuric acid, copper sulfate system; Electroplating temperature 20-40 ℃, electroplating time 10-60min; Complete the sample state of this step as shown in Figure 6;
(6) remove protective membrane.Use striping liquid method, the NaOH solution that striping liquid is 0.1%-8%.Complete the sample state of this step as shown in Figure 7;
(7) form anti oxidation layer.Material is Sn, adopts electroless plating method, and Cu electrode sample is carried out to surface micro etching pre-treatment, and sample adopts horizontal positioned mode; Chemical plating fluid temperature 30-80 ℃, time 2-60min; Complete the sample state of this step as shown in Figure 8;
Embodiment 2: the present embodiment is a kind of improved crystal silicon battery copper electro-plating method, with embodiment 1 difference step are:
(1) plating blocking layer.Material is Ni, adopts electroless plating method, adds photochemical catalysis, and sample adopts horizontal positioned mode; Chemical plating fluid is ortho phosphorous acid sodium solution; Temperature 30-95 ℃, time 0.5-30min;
(2) increase anti oxidation layer.Material is Sn, adopts electrochemical plating, and sample adopts horizontal positioned mode; Electroplate liquid is metilsulfate;
All the other steps are all identical with embodiment 1.
Embodiment 3: the present embodiment is a kind of improved crystal silicon battery copper electro-plating method, with embodiment 1 difference are:
In plating blocking layer and plating Cu electrode step, all do not use and add photochemical catalysis;
All the other processes and parameter all do not change.
Embodiment 4: the present embodiment is a kind of improved crystal silicon battery copper electro-plating method, with embodiment 1 difference are:
In all plating and electroless plating step, sample all adopts vertical modes of emplacement, the two-sided plating solution that all contacts of sample;
All the other processes and parameter all do not change.
Embodiment 5: the present embodiment is a kind of improved crystal silicon battery copper electro-plating method, with embodiment 1 difference step are:
Form anti oxidation layer.Anti oxidation layer material is Ag, adopts electrochemical plating, and sample adopts horizontal positioned mode; Galvanic anode is silver plate, and electroplate liquid is commercialization silver plating liquid, electroplates pH value and is controlled at 8-11, electroplating temperature 30-50 ℃;
All the other steps are all identical with embodiment 1.
Embodiment 6: the present embodiment is a kind of improved crystal silicon battery copper electro-plating method, with embodiment 1 difference step are:
Form anti oxidation layer.Anti oxidation layer material is OSP, adopts spraying method to cover; Cu electrode sample is carried out to surface micro etching pre-treatment, microetch thickness 1.0-1.5 μ m; PH value is between 4.0-7.0; Anti oxidation layer film forming thickness is 0.2-0.5 μ m.
Above-described embodiment is not the exhaustive of embodiment; also can there is other embodiment; above-described embodiment object is to illustrate the present invention, but not limits the scope of the invention, and all application that come by simple change of the present invention all drop in protection scope of the present invention.
This patent specification use-case goes to show the present invention, comprising optimal mode, and those of ordinary skill in the art is manufactured and use the present invention.This invents delegatable scope and comprises the content of claims and the content of the embodiment in specification sheets and other embodiment.These other examples also should belong to the scope that patent right of the present invention requires, as long as they contain the described technical characterictic of the identical written language of claim, or they include and the similar literal language described technical characterictic of claim without essence difference.
All patents, the full content of patent application and other reference should be incorporated to present specification by reference.But if a term in the application conflicts mutually with the term of including reference in, preferential with the application's term.
All scopes disclosed herein all comprise end points, and between end points, are to combine independently of one another.
It should be noted that " first ", " second " or similar vocabulary do not represent any order, and quality or importance are just used for distinguishing different technical characterictics.The implication that the qualifier " approximately " using in conjunction with quantity comprises described value and content context appointment (for example: it includes the error while measuring specific quantity).
Claims (19)
1. an improved crystal silicon solar batteries copper electro-plating method, is characterized in that: step comprises:
Covered with protective film: at the Si primary surface that deposits silicon nitride layer, cover with the mask of windowing as protective membrane, described in window position corresponding to grid line position to be etched, described protective membrane presents grid line circuitous pattern;
Etching: the silicon nitride layer of the position of windowing described in use etching liquid etching removal, forms grid line district at described Si primary surface;
Covering barrier layer: cover the non-Cu metal of one deck in described grid line district, described non-Cu metal is as the blocking layer of Cu;
Electroplate Cu: carry out Cu plating, on blocking layer, form Cu electrode;
Wherein, described protective membrane contains composition against corrosion, and in described etching process, protective membrane can stop etching liquid.
2. method according to claim 1; it is characterized in that: described formation windowing method comprises: protective membrane is used photochromics; first at the whole layer in silicon nitride layer surface, cover described photochromics; then according to grid line circuitous pattern, protective membrane is exposed, by development, remove described in grid line position photochromics and form and window.
3. method according to claim 2, is characterized in that: described protective membrane is dry film, uses pressed film method to cover.
4. method according to claim 3, is characterized in that: described dry film is the mixing photoresists that protective membrane polyethylene, photoresist film and carrier polyester film form.
5. method according to claim 2, is characterized in that: described protective membrane is ink type photoresists, uses silk screen print method to cover.
6. method according to claim 1, is characterized in that: the method that described formation protective membrane is windowed comprises: use the ink-jet technology grid line position to be etched on described silicon nitride layer surface with exterior domain direct spraying.
7. method according to claim 1, is characterized in that: described protective membrane is acid resistance, and described etching liquid is used the hydrofluoric acid (aqueous hydrogen fluoride solution) of 10%-35%, and the time is 2-60min.
8. method according to claim 1, is characterized in that: described barrier metal comprises one of following: nickel (Ni), chromium (Cr), titanium (Ti), tungsten (W), nickel chromium triangle (NiCr), nickel tungsten (NiW), titanium tungsten (TiW), nickel molybdenum (NiMo) and cobalt (Co).
9. method according to claim 8, is characterized in that: described plating blocking layer adopts electroplates or electroless plating.
10. method according to claim 1, is characterized in that: described Cu electrode height is 10-40 μ m, and width is 10-200 μ m.
11. according to the method described in 1 to 10 arbitrary claim, it is characterized in that: at the anti oxidation layer of the surface coverage Cu of described Cu electrode contact air.
12. methods according to claim 11, is characterized in that: described covering anti oxidation layer method comprises one of following: eleetrotinplate (Sn), electroless plating Sn, electrosilvering (Ag), spraying and apply Organic Solderability protective membrane (OSP).
13. methods according to claim 12, is characterized in that: when described anti oxidation layer is used OSP or electroless plating Sn, at described Cu electrode surface, carry out microetch pre-treatment.
14. methods according to claim 13, is characterized in that: the anti oxidation layer of described use OSP, and Cu electrode microetch thickness is 0.5-2.5 μ m, anti oxidation layer thickness is 0.1-1 μ m.
15. methods according to claim 14, is characterized in that: when described plating or electroless plating anti oxidation layer, described Si base is treated surfacing maintenance level, one side contact plating solution.
16. according to the method described in 1 to 10 arbitrary claim, it is characterized in that: when described plating blocking layer and/or plating Cu, Si base horizontal positioned, treats surfacing one side contact plating solution.
17. according to the method described in 1 to 10 arbitrary claim, it is characterized in that: described plating blocking layer and/or plating Cu carry out under visible light catalytic.
18. according to the method described in 1 to 10 arbitrary claim, it is characterized in that: described step also comprises: after Cu electrode plating completes, remove protective membrane.
19. according to method described in claim 18, it is characterized in that: remove protective membrane and use following one or more combined method: striping liquid, Virahol, acetone, ultrasonic wave, heating, water clean and oxygen plasma bombardment.
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| CN110634971A (en) * | 2018-05-31 | 2019-12-31 | 福建金石能源有限公司 | Back contact heterojunction solar cell and manufacturing method thereof |
| CN112086525A (en) * | 2020-09-07 | 2020-12-15 | 隆基绿能科技股份有限公司 | Solar cell and manufacturing method thereof |
| CN112086525B (en) * | 2020-09-07 | 2022-11-04 | 隆基绿能科技股份有限公司 | Solar cell and manufacturing method thereof |
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| CN113862770B (en) * | 2021-09-28 | 2023-12-26 | 北京航空航天大学杭州创新研究院 | Method for preparing patterned electrode by adopting deplating process |
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Address after: 102209 No. 245 Shunsha Road, Xiaotangshan Town, Changping District, Beijing (Future Science and Technology City) Co-patentee after: GD Solar Co., Ltd. Patentee after: Guodian New Energy Technology Research Institute Co., Ltd. Address before: 102209 Beijing Changping District city Beiqijia town north two street, the future of science and technology Co-patentee before: GD Solar Co., Ltd. Patentee before: Guodian New Energy Technology Institute |