CN105679688B - 在多模式脉冲处理中检测处理点的系统和方法 - Google Patents

在多模式脉冲处理中检测处理点的系统和方法 Download PDF

Info

Publication number
CN105679688B
CN105679688B CN201510683129.1A CN201510683129A CN105679688B CN 105679688 B CN105679688 B CN 105679688B CN 201510683129 A CN201510683129 A CN 201510683129A CN 105679688 B CN105679688 B CN 105679688B
Authority
CN
China
Prior art keywords
processing
output variable
point
mode pulse
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510683129.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN105679688A (zh
Inventor
亚辛·卡布兹
豪尔赫·卢克
安德鲁·D·贝利三世
穆罕默德·德里亚·特蒂克
拉姆库马尔·苏布拉马尼安
山口阳子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to CN201910203268.8A priority Critical patent/CN110246743B/zh
Publication of CN105679688A publication Critical patent/CN105679688A/zh
Application granted granted Critical
Publication of CN105679688B publication Critical patent/CN105679688B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
CN201510683129.1A 2014-10-20 2015-10-20 在多模式脉冲处理中检测处理点的系统和方法 Active CN105679688B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910203268.8A CN110246743B (zh) 2014-10-20 2015-10-20 在多模式脉冲处理中检测处理点的系统和方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462066330P 2014-10-20 2014-10-20
US62/066,330 2014-10-20
US14/523,770 2014-10-24
US14/523,770 US9640371B2 (en) 2014-10-20 2014-10-24 System and method for detecting a process point in multi-mode pulse processes

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201910203268.8A Division CN110246743B (zh) 2014-10-20 2015-10-20 在多模式脉冲处理中检测处理点的系统和方法

Publications (2)

Publication Number Publication Date
CN105679688A CN105679688A (zh) 2016-06-15
CN105679688B true CN105679688B (zh) 2019-04-16

Family

ID=54337130

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201510683129.1A Active CN105679688B (zh) 2014-10-20 2015-10-20 在多模式脉冲处理中检测处理点的系统和方法
CN201910203268.8A Active CN110246743B (zh) 2014-10-20 2015-10-20 在多模式脉冲处理中检测处理点的系统和方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201910203268.8A Active CN110246743B (zh) 2014-10-20 2015-10-20 在多模式脉冲处理中检测处理点的系统和方法

Country Status (7)

Country Link
US (2) US9640371B2 (cg-RX-API-DMAC7.html)
EP (1) EP3012855B1 (cg-RX-API-DMAC7.html)
JP (1) JP2016082233A (cg-RX-API-DMAC7.html)
KR (1) KR102623688B1 (cg-RX-API-DMAC7.html)
CN (2) CN105679688B (cg-RX-API-DMAC7.html)
SG (1) SG10201508634SA (cg-RX-API-DMAC7.html)
TW (1) TWI679671B (cg-RX-API-DMAC7.html)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9640371B2 (en) * 2014-10-20 2017-05-02 Lam Research Corporation System and method for detecting a process point in multi-mode pulse processes
JP6356615B2 (ja) * 2015-02-06 2018-07-11 東芝メモリ株式会社 半導体製造装置および半導体製造方法
US10522429B2 (en) * 2015-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
US20170330764A1 (en) * 2016-05-12 2017-11-16 Lam Research Corporation Methods and apparatuses for controlling transitions between continuous wave and pulsing plasmas
CN107644811B (zh) * 2016-07-20 2020-05-22 中微半导体设备(上海)股份有限公司 博世工艺的刻蚀终点监测方法以及博世刻蚀方法
US10546748B2 (en) 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US11355353B2 (en) 2018-01-30 2022-06-07 Lam Research Corporation Tin oxide mandrels in patterning
KR102841279B1 (ko) 2018-03-19 2025-07-31 램 리써치 코포레이션 챔퍼리스 (chamferless) 비아 통합 스킴 (scheme)
US11209478B2 (en) * 2018-04-03 2021-12-28 Applied Materials, Inc. Pulse system verification
CN110648888B (zh) * 2018-06-27 2020-10-13 北京北方华创微电子装备有限公司 射频脉冲匹配方法及其装置、脉冲等离子体产生系统
US10748823B2 (en) 2018-09-27 2020-08-18 International Business Machines Corporation Embedded etch rate reference layer for enhanced etch time precision
WO2020106297A1 (en) * 2018-11-21 2020-05-28 Lam Research Corporation Method for determining cleaning endpoint
CN111238669B (zh) * 2018-11-29 2022-05-13 拓荆科技股份有限公司 用于半导体射频处理装置的温度测量方法
JP7320085B2 (ja) * 2019-06-27 2023-08-02 ラム リサーチ コーポレーション 交互のエッチングプロセスおよび不動態化プロセス
JP7454971B2 (ja) * 2020-03-17 2024-03-25 東京エレクトロン株式会社 検出方法及びプラズマ処理装置
WO2022020507A1 (en) 2020-07-23 2022-01-27 Lam Research Corporation Advanced self aligned multiple patterning using tin oxide
US12584216B2 (en) 2021-04-21 2026-03-24 Lam Research Corporation Minimizing tin oxide chamber clean time
WO2022234831A1 (ja) * 2021-05-06 2022-11-10 東京エレクトロン株式会社 プラズマ処理装置及び終点検出方法
KR20240026068A (ko) * 2021-06-29 2024-02-27 램 리써치 코포레이션 고 종횡비 에칭을 위한 다중 상태 펄싱
GB202109722D0 (en) 2021-07-06 2021-08-18 Oxford Instruments Nanotechnology Tools Ltd Method of etching or depositing a thin film
JP2024527822A (ja) * 2021-07-22 2024-07-26 ラム リサーチ コーポレーション プラズマプロセスの監視および制御
WO2024054380A1 (en) * 2022-09-08 2024-03-14 Lam Research Corporation Multi-sensor determination of a state of semiconductor equipment
US20240339309A1 (en) * 2023-04-10 2024-10-10 Tokyo Electron Limited Advanced OES Characterization

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060006139A1 (en) * 2003-05-09 2006-01-12 David Johnson Selection of wavelengths for end point in a time division multiplexed process
CN1784778A (zh) * 2003-05-09 2006-06-07 优利讯美国有限公司 时分复用处理中的包络跟随器终点检测
US20060175010A1 (en) * 2004-12-31 2006-08-10 Alcatel Apparatus and a method for controlling the depth of etching during alternating plasma etching of semiconductor substrates

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3630931B2 (ja) * 1996-08-29 2005-03-23 富士通株式会社 プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法
JPH11243078A (ja) 1997-02-10 1999-09-07 Hitachi Ltd プラズマ終点判定方法
JP2003524753A (ja) * 1998-04-23 2003-08-19 サンディア コーポレーション プラズマ処理操作を監視する方法及び装置
US6566272B2 (en) * 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
JP2001044171A (ja) 1999-07-28 2001-02-16 Matsushita Electric Ind Co Ltd エッチング終点検出方法および装置
JP2004134540A (ja) * 2002-10-10 2004-04-30 Dainippon Screen Mfg Co Ltd ドライエッチング装置および終点検出方法
US8257546B2 (en) * 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
US6905624B2 (en) * 2003-07-07 2005-06-14 Applied Materials, Inc. Interferometric endpoint detection in a substrate etching process
US20050211668A1 (en) * 2004-03-26 2005-09-29 Lam Research Corporation Methods of processing a substrate with minimal scalloping
CN101517713B (zh) * 2006-09-19 2011-02-09 东京毅力科创株式会社 等离子体清洁方法和等离子体cvd方法
US8092695B2 (en) * 2006-10-30 2012-01-10 Applied Materials, Inc. Endpoint detection for photomask etching
JP2008218898A (ja) * 2007-03-07 2008-09-18 Hitachi High-Technologies Corp プラズマ処理装置
JP4483907B2 (ja) * 2007-08-21 2010-06-16 トヨタ自動車株式会社 車両制御方法および車両制御装置
JP5037303B2 (ja) * 2007-11-08 2012-09-26 株式会社日立ハイテクノロジーズ ｈｉｇｈ−ｋ／メタル構造を備えた半導体素子のプラズマ処理方法
US8009938B2 (en) * 2008-02-29 2011-08-30 Applied Materials, Inc. Advanced process sensing and control using near infrared spectral reflectometry
CN102301458B (zh) * 2009-01-31 2016-01-20 应用材料公司 用于蚀刻的方法和设备
JP5170216B2 (ja) * 2010-11-16 2013-03-27 株式会社デンソー プラズマ発生装置
JP2014038875A (ja) * 2010-12-08 2014-02-27 Shimadzu Corp エッチングモニタリング装置
US8501499B2 (en) * 2011-03-28 2013-08-06 Tokyo Electron Limited Adaptive recipe selector
US20130048082A1 (en) * 2011-08-22 2013-02-28 Mirzafer Abatchev System, method and apparatus for real time control of rapid alternating processes (rap)
US9887071B2 (en) * 2011-12-16 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-zone EPD detectors
US8592328B2 (en) * 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
JP5967710B2 (ja) * 2012-09-28 2016-08-10 サムコ株式会社 プラズマエッチングの終点検出方法
CN104736744B (zh) * 2012-10-17 2017-06-06 东京毅力科创株式会社 使用多变量分析的等离子体蚀刻终点检测
CN102931045B (zh) * 2012-10-18 2015-08-26 中微半导体设备(上海)有限公司 刻蚀工艺监控信号的处理方法和刻蚀终点控制方法
JP5384758B2 (ja) * 2013-01-31 2014-01-08 株式会社日立ハイテクノロジーズ プラズマエッチング装置
CN103117202B (zh) 2013-02-19 2015-09-09 中微半导体设备(上海)有限公司 等离子体处理工艺的终点检测装置及方法
CN103954903B (zh) * 2014-05-21 2016-08-17 北京航天控制仪器研究所 一种可实时解算的多模式输出电路测试系统
US9640371B2 (en) * 2014-10-20 2017-05-02 Lam Research Corporation System and method for detecting a process point in multi-mode pulse processes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060006139A1 (en) * 2003-05-09 2006-01-12 David Johnson Selection of wavelengths for end point in a time division multiplexed process
CN1784778A (zh) * 2003-05-09 2006-06-07 优利讯美国有限公司 时分复用处理中的包络跟随器终点检测
US20060175010A1 (en) * 2004-12-31 2006-08-10 Alcatel Apparatus and a method for controlling the depth of etching during alternating plasma etching of semiconductor substrates

Also Published As

Publication number Publication date
CN105679688A (zh) 2016-06-15
SG10201508634SA (en) 2016-05-30
JP2016082233A (ja) 2016-05-16
TWI679671B (zh) 2019-12-11
CN110246743B (zh) 2022-12-20
KR20160046309A (ko) 2016-04-28
KR102623688B1 (ko) 2024-01-10
EP3012855B1 (en) 2018-07-18
US20170207070A1 (en) 2017-07-20
TW201630028A (zh) 2016-08-16
CN110246743A (zh) 2019-09-17
US20160111261A1 (en) 2016-04-21
US10242849B2 (en) 2019-03-26
US9640371B2 (en) 2017-05-02
EP3012855A1 (en) 2016-04-27

Similar Documents

Publication Publication Date Title
TWI679671B (zh) 多模式脈衝程序中程序點偵測用之控制器、方法及電腦可讀取媒體
KR101313912B1 (ko) 이상 검출 시스템, 이상 검출 방법 및 기억 매체
US10847430B2 (en) Method of feature exaction from time-series of spectra to control endpoint of process
TWI706432B (zh) 使用光學資料以監視射頻產生器操作的系統、方法及設備
TW469554B (en) Method and apparatus for monitoring a process by employing principal component analysis
JP4724795B2 (ja) 時分割多重化エッチプロセスにおける終点検出方法
TWI517246B (zh) Analytical methods, analytical devices and etching processing systems
TWI396224B (zh) 用於測量及偵測光學發射以及決定氣體原子相對濃度之方法及裝置
JP2001210625A5 (cg-RX-API-DMAC7.html)
JP4620786B2 (ja) 蛍光検出方法、蛍光検出装置及びプログラム
JP2019033165A5 (ja) プラズマ処理装置及び半導体装置製造システム
TW201604955A (zh) 蝕刻裝置之資料解析方法以及蝕刻方法及其裝置
KR101495621B1 (ko) 플라즈마 장치 및 분석 장치
Nahvi et al. Electrical impedance spectroscopy sensing for industrial processes
KR980012213A (ko) 반도체 웨이퍼의 에칭 균일도 측정 장치 및 방법
JP2021523385A (ja) 化学分析装置及び方法
US6894786B1 (en) Process monitor
JP2003264179A5 (cg-RX-API-DMAC7.html)
US20240203712A1 (en) Plasma processing apparatus, data analysis apparatus, and semiconductor device manufacturing system
Ma Unsupervised feature extraction techniques for plasma semiconductor etch processes
TW200401885A (en) Method and device for determining the thickness of a layer applied to a carrier, and monitoring system
WO2019227291A1 (zh) 基于拉曼光谱和libs的物质检测方法、装置及电子设备

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant