CN105679683B - A kind of copper and tin copper bonding technology and structure based on copper nanometer rods - Google Patents
A kind of copper and tin copper bonding technology and structure based on copper nanometer rods Download PDFInfo
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- CN105679683B CN105679683B CN201610024230.0A CN201610024230A CN105679683B CN 105679683 B CN105679683 B CN 105679683B CN 201610024230 A CN201610024230 A CN 201610024230A CN 105679683 B CN105679683 B CN 105679683B
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
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- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8134—Bonding interfaces of the bump connector
- H01L2224/81359—Material
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- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/81895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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- H01L2924/0105—Tin [Sn]
Abstract
The invention discloses a kind of copper and tin copper bonding technology and structure based on copper nanometer rods, which includes: to be sequentially depositing insulating layer, adhesion layer and seed layer in substrate surface；One layer photoresist of spin coating on the seed layer, and circular hole is made on a photoresist；Electro-coppering obtains copper bump in circular hole；Photoresist is removed, and removes exposed seed layer and adhesion layer；In copper bump surface and surrounding spin coating photoresist, copper bump upper surface is then exposed；Two groups of substrate units, electrotinning salient point on the copper bump of one group of substrate unit are obtained using above-mentioned steps, and removes photoresist；Copper nanometer rods are deposited on the copper bump of another group of substrate unit, and remove photoresist；Two groups of substrate units will be bonded by hot pressing mode.The copper and tin copper bonding structure is obtained by above-mentioned bonding technology.Copper nanometer rods are bonded by the present invention applied to copper and tin copper, and bonding temperature can be effectively reduced and obtain close bonding face, and preparation process is simply controllable, at low cost, have great application value.
Description
Technical field
The invention belongs to technical field of micro-nano manufacture, are bonded more particularly, to a kind of copper and tin copper based on copper nanometer rods
Technique and structure.
Background technique
Growing continuously and fast for integrated circuit (IC) constantly causes the change of each field product and creates social new demand,
The key areas such as national security, high-end manufacture, network communication play crucial supporting role.As characteristic size enters 20/
14nm technology node, it is clear that IC manufactures technology path of the preceding road technique based on extreme ultraviolet photolithographic, occurs a large amount of intensive
Interconnecting microchannel, trigger comprehensive change in post-channel interconnection mode and encapsulation technology, three-dimensionally integrated become promotes device
It can be with the inevitable choice of cost performance.
Three-dimensionally integrated is to pass through intensive microchannel reality between chip by the integrated chip of different function into a system
Existing three-dimensional space perpendicular interconnection, wherein micro convex point interconnection is three-dimensionally integrated key technology.With packaging density increase and
Characteristic size further decreases, and dimpling spot size is constantly reduced, and bonded interface thickness is also required to further decrease, low temperature key
Conjunction technology meets the needs of temperature sensor, it is new will to become three-dimensionally integrated interconnection due to that can reduce bonding temperature and pressure
Development trend.
Copper and tin copper eutectic bonding is a kind of mode of low temperature interconnection, utilizes refractory metal (copper) and low-melting-point metal
(tin) is being alloy lower than fusion under eutectic temperature and is solidifying that the device that needs are connected is bonded together.Above-mentioned connection type
Due to the quality requirement on para-linkage surface when the presence of low-melting-point metal reduces bonding, while not needing high vacuum environment and moving back
Fiery process, therefore be used widely in three-dimensionally integrated.However, the bonding temperature of the technology is generally 260~320 at present
DEG C, how the slightly above fusing point of tin improves the technology to further decrease the requirement of interconnection temperature and para-linkage environment and be still
One challenge.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the present invention provides a kind of copper and tin copper based on copper nanometer rods
Bonding technology and structure obtain copper nanometer rods wherein depositing by oblique sputtering on copper bump surface, and the copper nanometer rods are direct
It is bonded applied to copper and tin copper, using the surface high activity of the low melting point and copper nanometer rods of copper nanometer rods and tin, to reduce bonding
Temperature, and the requirement of para-linkage environment is reduced, the technique and structure preparation process are simply controllable, and favorable repeatability is not necessarily to
Complicated equipment, it is at low cost, there is great application value.
To achieve the above object, according to one aspect of the present invention, a kind of copper and tin copper key based on copper nanometer rods is proposed
Technique is closed, which includes the following steps:
1) insulating layer, adhesion layer and seed layer are sequentially depositing in substrate surface；
2) one layer photoresist of spin coating in the seed layer, and circular hole is made on the photoresist；
3) electro-coppering in the circular hole, obtains copper bump；
4) photoresist is removed, the seed layer and adhesion layer of exposure are removed using wet process or dry corrosion process；
5) in one layer photoresist of copper bump surface and surrounding spin coating, the upper surface of photoetching process exposure copper bump is utilized；
6) step 1)~5 are utilized) the identical substrate unit of two groups of structures is obtained, in the copper bump of wherein one group of substrate unit
Upper surface electrotinning salient point, and remove photoresist；It is heavy using oblique sputtering method in the copper bump upper surface of another group of substrate unit
Product copper nanometer rods, and remove photoresist；
7) the tin salient point is bonded with the copper nanometer rods by hot pressing mode；By this method, two groups of substrate lists are realized
The bonding of member.
As it is further preferred that the circular hole is one or more, the diameter of single circular hole is 5 μm~200 μm.
As it is further preferred that the height of copper bump is not more than photoresist thickness in the step 3).
As it is further preferred that photoresist thickness is greater than copper bump height in the step 5).
As it is further preferred that when depositing copper nanometer rods, the angle of substrate and target is 85 °, is splashed in the step 6)
Penetrating the time is 20min~40min；The diameter of the copper nanometer rods be 100nm~200nm, vertical direction height be 300nm~
600nm。
As it is further preferred that in the step 7), the temperature of bonding is 60 DEG C~400 DEG C, pressure be 0.1MPa~
20MPa, time are 1min~60min, and bonding environment is vacuum, inert gas or air environment.
It is another aspect of this invention to provide that providing a kind of copper and tin copper bonding structure based on copper nanometer rods, the bonding
Structure includes the identical substrate unit of two groups of structures, and the substrate unit includes substrate and is sequentially deposited at the substrate surface
Insulating layer, adhesion layer and seed layer, be electroplate with copper bump in the seed layer；The wherein copper bump of one group of substrate unit
On be electroplate with tin salient point, be deposited with copper nanometer rods using oblique sputtering method on the copper bump of another group of substrate unit, it is described
Tin salient point and copper nanometer rods are bonded by hot pressing mode.
As it is further preferred that the copper bump obtains in the following way: one layer of light of spin coating in the seed layer
Photoresist, and circular hole is made on the photoresist；The electro-coppering in the circular hole obtains the copper bump.
As it is further preferred that the electrotinning salient point on the copper bump in the following way: firstly, removing the light
Photoresist removes the seed layer and adhesion layer of exposure using wet process or dry corrosion process；Then, on the copper bump surface and four
All one layer photoresists of spin coating utilize the upper surface of photoetching process exposure copper bump；Finally, being electroplated in the upper surface of the copper bump
Tin salient point, and remove photoresist.
As it is further preferred that copper nanometer rods are deposited on the copper bump in the following way: firstly, described in removal
Photoresist removes the seed layer and adhesion layer of exposure using wet process or dry corrosion process；Then, on the copper bump surface and
One layer photoresist of surrounding spin coating utilizes the upper surface of photoetching process exposure copper bump；It is received finally, depositing copper on the copper bump
Rice stick, and remove photoresist.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, by copper nanometer rods application
In the copper and tin copper bonding towards three-dimensional micro- interconnection, bonding temperature and the requirement for being bonded environment are significantly reduced, is had following
The utility model has the advantages that
1. prepare copper/tin salient point using electroplating technology, salient point pitch, diameter and highly controllable, process window mouth width is conducive to
Realize the micro convex point interconnection of the ultra-fine spacing of three-dimensional high-density.
2. copper nanometer rods are prepared in the way of oblique sputtering by magnetron sputtering method, compared to traditional preparation nanostructure work
Skill (such as chemical vapor deposition, femto-second laser pulse deposition, hydro-thermal method), technique is simpler controllable, reproducible.
3. copper nanometer rods are applied to copper using the special nature such as low melting point, high surface etc. of nano material performance
Tin copper bonding technology, compared with traditional copper and tin copper eutectic bonding technique, the temperature that can significantly reduce bonding (is down to the fusing point of tin
Still available close bonded interface below, minimum to be down to 60 DEG C), and the requirement for being bonded environment is also become more to widen
Loose (being down to air environment from traditional vacuum or inert gas) thus reduces thermal deformation and thermal stress that bonding process generates,
Be conducive to protect device.
4. copper nanorod surfaces prepared by the present invention have more small copper nanostructure (diameter about 10nm-20nm),
Small size nanostructure helps to further decrease the fusing point of copper nanometer rods, improves surface-active, promotes copper in bonding process former
The diffusion of son and tin atom is conducive to obtain even closer bonded interface, improves bonding quality.
Detailed description of the invention
Fig. 1 (a) be be deposited with insulating layer, adhesion layer, seed layer substrate on spin coating photoresist and make on a photoresist
Make borehole structure schematic diagram；
Fig. 1 (b) is electro-coppering micro convex point and to remove extra adhesion layer and seed layer structure schematic diagram in borehole structure；
Fig. 1 (c) is to utilize photoetching process exposure copper bump schematic diagram in one layer photoresist of copper bump surface spin coating；
Fig. 1 (d) is in one group of copper bump electroplating surface tin salient point and the schematic diagram that removes photoresist；
Fig. 1 (e) is in another group of copper bump surface sputtering copper nanometer rods and the schematic diagram that removes photoresist；
Fig. 1 (f) is the schematic diagram that two groups of substrates are carried out with thermocompression bonding；
Fig. 2 (a) and (b) are the SEM figures for the copper nanometer rods that magnetron sputtering obtains.
Fig. 3 is the SEM figure that bonding temperature is the bonded interface obtained at 60 DEG C.
Fig. 4 is the SEM figure that bonding temperature is the bonded interface obtained at 200 DEG C.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
As shown in Fig. 1 (a)~(f), the copper and tin copper bonding technology based on copper nanometer rods of the embodiment of the present invention, including it is as follows
Step:
(1) insulating layer 2, adhesion layer 3 and seed layer 4 are sequentially depositing on the surface of substrate 1.
Wherein, the material of insulating layer 2 be selected from silica, silicon nitride, aluminum oxide, polyimides, Parylene,
The mixture or complex of polybenzocyclobutene or photoresist and above-mentioned material, and preferably formed sediment using thermal oxide, physical vapor
Product (PVD) or the mode of chemical vapor deposition (CVD) are formed；The material of adhesion layer 3 is titanium, titanium-tungsten (Ti-W), titanium-titanium nitride
(Ti-TiN) or tantalum-tantalum nitride (Ta-TaN), and preferably using atomic layer deposition (ALD), physical vapor deposition (PVD) or chemistry
The modes such as vapor deposition (CVD) are formed；Seed layer 4 is that the materials such as copper (Cu) or golden (Au) are constituted, and preferably use chemical plating, electricity
Chemical grafting, atomic layer deposition (ALD), physical vapor deposition (PVD) or chemical vapor deposition (CVD) mode formed.
(2) one layer photoresist 5 of spin coating in seed layer 4, and circular hole is made on photoresist 5.
Wherein, circular hole can be one or more, and the arrangement on photoresist 5 can be face formation, surrounding type, daisy chain
Type or any arrangement.Preferably, the diameter of circular hole is 5 μm~200 μm, and photoresist height is 5 μm~100 μm.
(3) electro-coppering in circular hole, obtains copper bump 6, and the height of copper bump 6 is not more than the thickness of photoresist 4.It is preferred that
Ground, the height of copper bump 6 are 5 μm~50 μm.
(4) the remaining photoresist of removal and the seed layer and adhesion layer of exposure.
Wherein, the mode of glue or acetone soak is preferably gone in the removal of photoresist；The removal of seed layer and adhesion layer is preferred
The mode of wet etching or dry etching, the seed layer and adhesion layer of so-called exposure refer to seed layer and adhesion layer not by copper bump
After the part of covering, exposed seed layer and adhesion layer removal, the level cross-sectionn of remaining seed layer and adhesion layer part
Product is identical as the horizontal cross-sectional area of copper bump.
(5) in one layer photoresist of copper bump surface and surrounding spin coating, using the upper surface of photoetching process exposure copper bump, together
When protect remaining region, i.e., only remove the photoresist of copper bump upper surface, the photoresist at other positions does not remove；Wherein, photoetching
Glue thickness is greater than copper bump height.
Preferably, photoresist 5 with a thickness of 7 μm~100 μm.
(6) the identical substrate unit of two groups of structures is obtained using above-mentioned steps (1)~(5), the copper of one group of substrate unit is convex
Point electroplating surface tin salient point simultaneously removes remaining photoresist；Another group of substrate unit is using magnetron sputtering method with the side of oblique sputtering
Formula removes remaining photoresist in copper bump copper-depositing on surface nanometer rods.
Preferably, the height of tin salient point 7 is 2 μm~20 μm；Sputter substrate and cathode targets folder to be sputtered when copper nanometer rods
Angle (i.e. the angle of the upper surface of copper bump 6 and target) be 85 °, be different from conventional magnetron sputtering in substrate it is parallel with target,
Sputtering time 20min~40min, obtained nanorod diameter 100nm~200nm, vertical direction height 300nm~600nm.
(7) two groups of substrate units are bonded by hot pressing mode.
Preferably, bonding technology is as follows: bonding temperature is 60 DEG C~400 DEG C, and pressure is 0.1MPa~20MPa, and the time is
1min~60min, bonding environment are vacuum environment, inert gas environment or air environment.
Such as Fig. 1 (f), a kind of copper and tin copper bonding structure based on copper nanometer rods of the embodiment of the present invention comprising two groups of knots
The identical substrate unit of structure, the substrate unit include substrate 1 and are sequentially deposited at the insulating layer 2 on 1 surface of substrate, adhesion layer 3
With seed layer 4, copper bump 6 is electroplate in seed layer 4；It wherein is electroplate with tin salient point 7 on the copper bump 6 of one group of substrate unit, separately
Copper nanometer rods 8 are deposited with using oblique sputtering method on the copper bump 6 of one group of substrate unit, tin salient point 7 and copper nanometer rods 8 pass through heat
Pressure mode is bonded.
Preferably, copper bump 6 obtains in the following way:
One layer photoresist 5 of spin coating in seed layer 4, and circular hole is made on photoresist 5；The electro-coppering in circular hole, obtains
Copper bump 6.
Preferably, the electrotinning salient point 7 on copper bump 6 in the following way:
Firstly, removal photoresist, the seed layer 4 and adhesion layer 3 of exposure are removed using wet process or dry corrosion process；So
Afterwards, in one layer photoresist of 6 surface of copper bump and surrounding spin coating, the upper surface of photoetching process exposure copper bump 6 is utilized；Finally,
The upper surface electrotinning salient point 7 of copper bump 6, and remove photoresist.
Preferably, copper nanometer rods 8 are deposited on copper bump 6 in the following way:
Firstly, removal photoresist, the seed layer 4 and adhesion layer 3 of exposure are removed using wet process or dry corrosion process；So
Afterwards, in one layer photoresist of 6 surface of copper bump and surrounding spin coating, the upper surface of photoetching process exposure copper bump 6 is utilized；Finally,
Copper nanometer rods 8 are deposited on copper bump 6, and remove photoresist.
The following are specific embodiments:
Embodiment 1
Copper and tin copper bonding technology based on copper nanometer rods includes the following steps:
(1) a layer insulating SiO is deposited using thermal oxide in clean substrate surface2, with a thickness of 50nm；Followed by magnetic
Control sputtering is sequentially depositing adhesion layer Ti and seed layer Cu, and thickness is respectively 20nm and 50nm.
(2) in the spin coating of seed layer surface with a thickness of 5 μm of PR1-4000A positive photoresist, using containing face formation circular hole
Pattern mask, the light transmission of circular hole region, the diameter of circular hole is 5 μm, and center of circular hole is away from being 10 μm, using MA6 contact photoetching machine
Photoetching is carried out, and is rinsed after being developed using RD6 developer solution with deionized water and is dried up with nitrogen gun.
(3) figure being lithographically derived is put into plating solution for copper-plating used and is electroplated, plating solution for copper-plating used selects Xin Yang company
SYSB2210 salient point plating solution for copper-plating used, electroplating current density 10ASD obtain the copper bump that height is 5 μm.
(4) substrate of electro-coppering is put into and removes remaining photoresist in acetone, spent after photoresist completely removes from
Sub- water is rinsed and is dried up with nitrogen gun；The seed layer (Cu) and adhesion layer (Ti) of exposure are removed using wet etching method, including
By obtained substrate in Ti corrosive liquid (HF:H2O2: H2O=1:1:20 20s is stopped in), then is rinsed with deionized water；Then by it
It is put into (H in Cu etching liquid2O2: HCl:H2O=1:3:6 40s) is stopped, then is rinsed with deionized water and is dried up with nitrogen gun.
(5) it is contacted with a thickness of 7 μm of PR1-4000A positive photoresist using MA6 in the surface spin coating for being electroplate with copper bump
Formula litho machine carries out alignment, and is rinsed after being developed using RD6 developer solution with deionized water and dried up with nitrogen gun.
(6) substrate unit obtained using above-mentioned steps is divided into two groups, wherein one group of substrate unit is put into tin plating plating
It is electroplated in liquid, Tin plating electrolyte selection Xin Yang company SYSB2250 salient point Tin plating electrolyte, electroplating current density 3ASD,
The tin salient point that height is 2 μm is obtained, is put it into acetone later and removes remaining photoresist, used after photoresist completely removes
Deionized water is rinsed and is dried up with nitrogen gun；Another group of substrate unit is heavy in copper bump upper surface oblique sputtering using magnetron sputtering
Product copper nanometer rods, print and target angle are 85 ° when sputtering copper nanometer rods, sputtering time 40min.Fig. 2 (a) and (b) are respectively
Sputter surface and the cross section SEM figure of obtained copper nanometer rods, it can be seen that nanometer rods are at certain angle of inclination with substrate, nanometer
Stick diameter about 200nm, vertical direction height about 600nm, while nanorod surfaces are covered with the small Cu of diameter 10nm~20nm and receive
Rice structure.
(7) two groups of substrate units being bonded by hot pressing mode, the temperature of bonding is 60 DEG C, pressure 20MPa, when
Between be 60min, bonding environment be vacuum.Bonded interface is as shown in figure 3, as seen from the figure, upper and lower two substrates, which realize, closely to be connected
It connects, bonded interface does not have the defects of apparent hole or crackle.Since bonding temperature is lower, only part Sn and Cu reacts
Generate intermetallic compound Cu6Sn5, therefore the structure of bonded interface is Cu/Cu6Sn5/Sn/Cu6Sn5/Cu。
Embodiment 2
Copper and tin copper bonding technology based on copper nanometer rods includes the following steps:
(1) a layer insulating SiO is deposited using thermal oxide in clean substrate surface2, with a thickness of 50nm；Followed by magnetic
Control sputtering is sequentially depositing adhesion layer TiW and seed layer Cu, and thickness is respectively 50nm and 100nm.
(2) justify with a thickness of 20 μm of PR1-12000A positive photoresist using containing face formation in the spin coating of seed layer surface
The pattern mask in hole, the light transmission of circular hole region, the diameter of circular hole are 50 μm, and center of circular hole is away from being 100 μm, using MA6 contact light
Quarter machine carries out photoetching, and is rinsed after being developed using RD6 developer solution with deionized water and dried up with nitrogen gun.
(3) figure being lithographically derived is put into plating solution for copper-plating used and is electroplated, plating solution for copper-plating used selects Xin Yang company
SYSB2210 salient point plating solution for copper-plating used, electroplating current density 10ASD obtain the copper bump that height is 15 μm.
(4) substrate of electro-coppering is put into and removes remaining photoresist in acetone, spent after photoresist completely removes from
Sub- water is rinsed and is dried up with nitrogen gun；The seed layer (Cu) and adhesion layer (TiW) of exposure are removed using wet etching method, including
By obtained substrate in TiW corrosive liquid (HF:HNO3: H2O=1:1:50 30s is stopped in), then is rinsed with deionized water；Then will
It is put into (H in Cu etching liquid2O2: HCl:H2O=1:3:6 40s) is stopped, then is rinsed with deionized water and is dried up with nitrogen gun.
(5) it is connect with a thickness of 20 μm of PR1-12000A positive photoresist using MA6 in the surface spin coating for being electroplate with copper bump
Touch litho machine carries out alignment, and is rinsed after being developed using RD6 developer solution with deionized water and dried up with nitrogen gun.
(6) two groups of substrate units are obtained using above-mentioned steps, wherein one group of substrate unit is put into Tin plating electrolyte and carries out
Plating, Tin plating electrolyte select Xin Yang company SYSB2250 salient point Tin plating electrolyte, and electroplating current density 3ASD obtains height
For 5 μm of tin salient point, is put it into acetone later and remove remaining photoresist, use deionized water after photoresist completely removes
It rinses and is dried up with nitrogen gun；Another group of substrate unit, in copper bump surface inclined deposition copper nanometer rods, is splashed using magnetron sputtering
Print and target angle are 85 ° when penetrating copper nanometer rods, sputtering time 30min, obtained nanorod diameter about 150nm, Vertical Square
It is 500nm to height.
(7) two groups of substrates are bonded by hot pressing mode, the temperature of bonding is 200 DEG C, pressure 10MPa, the time
For 30min, bonding environment is nitrogen atmosphere.Bonded interface is as shown in figure 4, upper and lower two substrates realize close connection, bonding
Interface does not have the defects of hole or crackle.Sn is sufficiently reacted with Cu at this temperature generates intermetallic compound Cu3Sn, therefore be bonded
Interfacial structure is Cu/Cu3Sn/Cu。
Embodiment 3
Copper and tin copper bonding technology based on copper nanometer rods includes the following steps:
(1) a layer insulating Si is deposited using chemical vapor deposition (CVD) in clean substrate surface3N4, with a thickness of
100nm；It is sequentially depositing adhesion layer Ti and seed layer Cu followed by magnetron sputtering, thickness is respectively 50nm and 200nm.
(2) justify with a thickness of 50 μm of NR26-25000P negative photoresist using containing surrounding type in the spin coating of seed layer surface
The pattern mask in hole, circular hole region is opaque, and the diameter of circular hole is 100 μm, and center of circular hole is away from being 400 μm, using MA6 contact
Litho machine carries out photoetching, and is rinsed after being developed using RD6 developer solution with deionized water and dried up with nitrogen gun.
(3) figure being lithographically derived is put into plating solution for copper-plating used and is electroplated, plating solution for copper-plating used selects Xin Yang company
SYSB2210 salient point plating solution for copper-plating used, electroplating current density 10ASD obtain the copper bump that height is 30 μm.
(4) substrate of electro-coppering is put into and removes remaining photoresist in acetone, spent after photoresist completely removes from
Sub- water is rinsed and is dried up with nitrogen gun；The seed layer (Cu) and adhesion layer (Ti) of exposure are removed using wet etching method, including
By obtained substrate in Ti corrosive liquid (HF:H2O2: H2O=1:1:20 40s is stopped in), then is rinsed with deionized water；Then by it
It is put into (H in Cu etching liquid2O2: HCl:H2O=1:3:6 60s) is stopped, then is rinsed with deionized water and is dried up with nitrogen gun.
(5) in the surface spin coating for being electroplate with copper bump with a thickness of 50 μm of NR26-25000P negative photoresist, using MA6
Contact photoetching machine carries out alignment, and is rinsed after being developed using RD6 developer solution with deionized water and dried up with nitrogen gun.
(6) substrate obtained using above-mentioned steps is divided into two groups, wherein one group of substrate is put into Tin plating electrolyte and carries out
Plating, Tin plating electrolyte select Xin Yang company SYSB2250 salient point Tin plating electrolyte, and electroplating current density 3ASD obtains height
For 10 μm of tin salient point, is put it into acetone later and remove remaining photoresist, use deionization after photoresist completely removes
Water is rinsed and is dried up with nitrogen gun；Another group of substrate deposits copper nanometer rods using magnetron sputtering, when sputtering copper nanometer rods print and
Target angle is 85 °, sputtering time 30min, obtained nanorod diameter about 150nm, and vertical direction height is 500nm.
(7) two groups of substrates are bonded by hot pressing mode, the temperature of bonding is 300 DEG C, pressure 0.1MPa, the time
For 10min, bonding environment is nitrogen protection.
Embodiment 4
Copper and tin copper bonding technology based on copper nanometer rods includes the following steps:
(1) a layer insulating Si is deposited using chemical vapor deposition (CVD) in clean substrate surface3N4, with a thickness of
100nm；It is sequentially depositing adhesion layer Ti and seed layer Cu followed by magnetron sputtering, thickness is respectively 50nm and 200nm.
(2) in the spin coating of seed layer surface with a thickness of 100 μm of NR26-25000P negative photoresist, using containing surrounding type
The pattern mask of circular hole, circular hole region is opaque, and the diameter of circular hole is 200 μm, and center of circular hole is contacted away from being 600 μm using MA6
Formula litho machine carries out photoetching, and is rinsed after being developed using RD6 developer solution with deionized water and dried up with nitrogen gun.
(3) figure being lithographically derived is put into plating solution for copper-plating used and is electroplated, plating solution for copper-plating used selects Xin Yang company
SYSB2210 salient point plating solution for copper-plating used, electroplating current density 10ASD obtain the copper bump that height is 50 μm.
(4) substrate of electro-coppering is put into and removes remaining photoresist in acetone, spent after photoresist completely removes from
Sub- water is rinsed and is dried up with nitrogen gun；The seed layer (Cu) and adhesion layer (Ti) of exposure are removed using the method for dry etching.
(5) in the surface spin coating for being electroplate with copper bump with a thickness of 100 μm of NR26-25000P negative photoresist, using MA6
Contact photoetching machine carries out alignment, and is rinsed after being developed using RD6 developer solution with deionized water and dried up with nitrogen gun.
(6) substrate obtained using above-mentioned steps is divided into two groups, wherein one group of substrate is put into Tin plating electrolyte and carries out
Plating, Tin plating electrolyte select Xin Yang company SYSB2250 salient point Tin plating electrolyte, and electroplating current density 3ASD obtains height
For 20 μm of tin salient point, is put it into acetone later and remove remaining photoresist, use deionization after photoresist completely removes
Water is rinsed and is dried up with nitrogen gun；Another group of substrate utilizes magnetron sputtering inclined sputter deposition copper nanometer rods, sputters copper nanometer rods
When print and target angle be 85 °, sputtering time 20min, obtained nanorod diameter about 100nm, vertical direction height is
300nm。
(7) two groups of substrates are bonded by hot pressing mode, the temperature of bonding is 400 DEG C, pressure 1MPa, and the time is
1min, bonding environment are air.
In conclusion special nature such as low melting point, high surface etc. of the present invention using nano material performance, micro- in copper
Bump surface deposits copper nanometer rods using oblique sputtering method, then coplanar based on copper nanometer rods reduction interconnecting parts fusing point and para-linkage
Property requirement, realize the low temperature copper and tin copper bonding towards three-dimensional micro- interconnection.It, can be with compared with traditional copper and tin copper eutectic bonding technique
The temperature (being down to the still available close bonded interface of the fusing point of tin or less, minimum to be down to 60 DEG C) of bonding is significantly reduced, and
And more loose (being down to air environment from traditional vacuum or inert gas) is also become for the requirement for being bonded environment.Thus subtract
The thermal deformation and thermal stress that few bonding process generates are conducive to protect device.Simultaneously as copper nanometer rods and its surface size are more
Small nanostructure has bigger surface-active, is conducive to the expansion for further promoting copper atom and tin atom in bonding process
It dissipates, therefore even if at relatively low temperatures and pressures, can also realize the bonding effect of high quality, towards the low of three-dimensional micro- interconnection
Warm bonding field has great application value.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (9)
1. a kind of copper and tin copper bonding technology based on copper nanometer rods, which is characterized in that the copper and tin copper bonding technology is in copper bump table
Face deposits copper nanometer rods using oblique sputtering method, then reduces wanting for interconnecting parts fusing point and para-linkage coplanarity based on copper nanometer rods
It asks, realizes the low temperature copper and tin copper bonding towards three-dimensional micro- interconnection, bonding temperature is down to tin fusing point or less and remains to obtain closely
Bonded interface, bonding temperature is minimum to be down to 60 DEG C, which can also reduce the requirement of para-linkage environment, from vacuum or inert gas
It is down to air environment, to reduce the thermal deformation and thermal stress of bonding process generation, which includes the following steps:
1) insulating layer, adhesion layer and seed layer are sequentially depositing in substrate surface；
2) one layer photoresist of spin coating in the seed layer, and circular hole is made on the photoresist；
3) electro-coppering in the circular hole, obtains copper bump；
4) photoresist is removed, the seed layer and adhesion layer of exposure are removed using wet process or dry corrosion process；
5) in one layer photoresist of copper bump surface and surrounding spin coating, the upper surface of photoetching process exposure copper bump is utilized；
6) step 1)~5 are utilized) obtain the identical substrate unit of two groups of structures, the table on the wherein copper bump of one group of substrate unit
Face electrotinning salient point, and remove photoresist；Copper is deposited using oblique sputtering method in the copper bump upper surface of another group of substrate unit
Nanometer rods, and remove photoresist；The depositing operation of copper nanometer rods are as follows: 85 ° of angle of substrate and target, sputtering time 20min~
40min, acquisition diameter are 100nm~200nm, and vertical direction height is the copper nanometer rods of the tilt distribution of 300nm~600nm,
And it is the small copper nanostructure of 10nm-20nm that copper nanorod surfaces, which have diameter,；
7) the tin salient point is bonded by hot pressing mode with the copper nanometer rods, by this method, realizes two groups of substrate units
Bonding.
2. the copper and tin copper bonding technology based on copper nanometer rods as described in claim 1, which is characterized in that the circular hole is one
Or it is multiple, the diameter of single circular hole is 5 μm~200 μm.
3. the copper and tin copper bonding technology based on copper nanometer rods as claimed in claim 1 or 2, which is characterized in that the step 3)
In, the height of copper bump is not more than photoresist thickness.
4. the copper and tin copper bonding technology based on copper nanometer rods as described in claim 1, which is characterized in that in the step 5),
Photoresist thickness is greater than copper bump height.
5. the copper and tin copper bonding technology based on copper nanometer rods as claimed in claim 4, which is characterized in that in the step 7),
The temperature of bonding be 60 DEG C~400 DEG C, pressure be 0.1MPa~20MPa, the time be 1min~60min, bonding environment be vacuum,
Inert gas or air environment.
6. a kind of copper and tin copper bonding structure based on copper nanometer rods, which is characterized in that the copper and tin copper bonding structure is in copper bump table
Face deposits copper nanometer rods using oblique sputtering method, then reduces wanting for interconnecting parts fusing point and para-linkage coplanarity based on copper nanometer rods
It asks, realizes the low temperature copper and tin copper bonding towards three-dimensional micro- interconnection, bonding temperature is down to tin fusing point or less and remains to obtain closely
Bonded interface, bonding temperature is minimum to be down to 60 DEG C, and the bonding structure includes the identical substrate unit of two groups of structures, the substrate
Unit includes substrate (1) and the insulating layer (2), adhesion layer (3) and seed layer (4) for being sequentially deposited at the substrate (1) surface,
Copper bump (6) are electroplate on the seed layer (4)；Wherein tin salient point is electroplate on the copper bump (6) of one group of substrate unit
(7), it is deposited with copper nanometer rods (8) on the copper bump (6) of another group of substrate unit using oblique sputtering method, the copper nanometer
The depositing operation of stick are as follows: 85 ° of angle of substrate and target, sputtering time 20min~40min, acquisition diameter be 100nm~
200nm, vertical direction height is the copper nanometer rods of the tilt distribution of 300nm~600nm, and copper nanorod surfaces are with diameter
The small copper nanostructure of 10nm-20nm, the tin salient point (7) and copper nanometer rods (8) are bonded by hot pressing mode.
7. the copper and tin copper bonding structure based on copper nanometer rods as claimed in claim 6, which is characterized in that the copper bump (6)
It obtains in the following way: one layer photoresist of spin coating (5) on the seed layer (4), and circle is made on the photoresist (5)
Hole；The electro-coppering in the circular hole obtains the copper bump (6).
8. the copper and tin copper bonding structure based on copper nanometer rods as claimed in claim 7, which is characterized in that exist in the following way
Electrotinning salient point (7) on the copper bump (6): it firstly, removing the photoresist, is removed using wet process or dry corrosion process sudden and violent
The seed layer (4) and adhesion layer (3) of dew；Then, in one layer photoresist of the copper bump (6) surface and surrounding spin coating, light is utilized
The upper surface of carving technology exposure copper bump (6)；Finally, in the upper surface electrotinning salient point (7) of the copper bump (6), and remove
Photoresist.
9. the copper and tin copper bonding structure based on copper nanometer rods as claimed in claim 7, which is characterized in that exist in the following way
Copper nanometer rods (8) are deposited on the copper bump (6): firstly, removing the photoresist, being removed using wet process or dry corrosion process
Exposed seed layer (4) and adhesion layer (3)；Then, it in one layer photoresist of the copper bump (6) surface and surrounding spin coating, utilizes
The upper surface of photoetching process exposure copper bump (6)；Finally, depositing copper nanometer rods (8) on the copper bump (6), and remove light
Photoresist.
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| CN105280509B (en) * | 2015-09-10 | 2018-04-27 | 武汉新芯集成电路制造有限公司 | A kind of hybrid bonded method of wafer based on low melting-point coper eutectic metal |
| CN111115556A (en) * | 2019-12-30 | 2020-05-08 | 青岛歌尔智能传感器有限公司 | Packaging method and packaging structure of micro-electro-mechanical system sensor |
| CN112479153B (en) * | 2020-10-21 | 2024-03-26 | 武汉鲲鹏微纳光电有限公司 | Etching method of seed layer, wafer-level packaging bonding ring and manufacturing method thereof |
| KR102535483B1 (en) * | 2021-07-02 | 2023-05-26 | 한양대학교 에리카산학협력단 | Cu-to-Cu DIRECT BONDING METHOD USING METAL ELECTROPLATING FILM, WAFER LEVEL PACKAGING METHOD USING THE SAME AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME |
| CN114582744B (en) * | 2022-02-18 | 2022-11-22 | 广东省科学院半导体研究所 | Method for bonding and interconnecting high-density copper pillar bumps |
| CN116741723B (en) * | 2023-08-14 | 2023-11-03 | 合肥阿基米德电子科技有限公司 | IGBT module and manufacturing process thereof |
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| CN102610537A (en) * | 2012-03-28 | 2012-07-25 | 上海交通大学 | Method for low-temperature solid bonding of semiconductor device |
| CN103510048A (en) * | 2013-08-19 | 2014-01-15 | 南京清航新材料科技有限公司 | Preparation method of copper nanowire arrays with porous structure and film conductivity measuring method thereof |
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