CN116741723B - IGBT module and manufacturing process thereof - Google Patents

IGBT module and manufacturing process thereof Download PDF

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Publication number
CN116741723B
CN116741723B CN202311013017.6A CN202311013017A CN116741723B CN 116741723 B CN116741723 B CN 116741723B CN 202311013017 A CN202311013017 A CN 202311013017A CN 116741723 B CN116741723 B CN 116741723B
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copper
nano
heat sink
layer
igbt module
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CN116741723A (en
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周洋
袁雄
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Hefei Archimedes Electronic Technology Co ltd
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Hefei Archimedes Electronic Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings

Abstract

The invention discloses an IGBT module and a manufacturing process thereof, which belong to the technical field of power electronic manufacturing and sealing and testing, and comprise a copper heat sink, a copper substrate, a BPSG insulating layer, a copper layer and a chip which are sequentially connected, wherein a first copper nanometer burr is arranged on a connecting surface of the copper heat sink facing the copper substrate, a second copper nanometer burr is arranged on a connecting surface of the copper substrate facing the copper heat sink, the first copper nanometer burr is directly inserted and connected with the second copper nanometer burr, a first cooling runner which is vertically distributed is arranged in the copper heat sink, a second cooling runner which is transversely distributed is arranged in the copper substrate, the first cooling runner and the second cooling runner are communicated after the copper substrate is connected with the copper heat sink, and a cooling medium is circulated in the first cooling runner and the second cooling runner. According to the invention, the connection compactness of the copper heat sink and the copper substrate can be improved by utilizing the first copper nano burrs and the second copper nano burrs, the thermal resistance is reduced, the heat transfer effect is improved, and the heat dissipation close to the heat source can be realized by utilizing the first cooling flow passage and the second cooling flow passage, so that the heat dissipation effect is further improved.

Description

IGBT module and manufacturing process thereof
Technical Field
The invention relates to the technical field of power electronic manufacturing and sealing, in particular to an IGBT module and a manufacturing process thereof.
Background
With the advent of the latter molar age, packaging technology for electronic components has evolved from conventional two-dimensional packaging to 2.5-dimensional (2.5D) or higher-level three-dimensional (3D) packaging. Although the 3D packaging technology improves the operation speed of electronic components and realizes miniaturization and multifunction of electronic equipment, the heat generated by the devices is further concentrated, and the conventional heat conduction technology cannot realize effective heat conduction. In modern electronic components, a significant portion of the power is converted to a form of heat, and the heat generated by the dissipation is severely threatening the operational reliability of the electronic device.
Thermal management is a more critical aspect in power package design due to the high thermal dissipation of power devices. The problem of "thermal management" has become one of the primary problems impeding the development of modern electronic components. Thermal management of power electronics refers to achieving high heat dissipation performance of the device through efficient heat dissipation techniques and rational structural design. With the continuous improvement of the integration level of the IGBT module and the continuous increase of the heat flux density, how to realize efficient heat dissipation restricts the wide application of the high-power IGBT module.
The Chinese patent with the grant publication number of CN 114334869B discloses an IGBT module packaging structure with automatic temperature control, which comprises a heat sink, a TIM, a copper substrate, a solder layer and a copper-clad ceramic substrate which are sequentially arranged from bottom to top; the copper-clad ceramic substrate is also provided with a diode and an IGBT chip; micro-channels penetrate through the heat sink, the TIM, the copper substrate, the solder layer and the copper-clad ceramic substrate; the copper-clad ceramic substrate, the copper substrate, the heat sink and the micro-channel form a solid-liquid-gas three-phase heat dissipation system. According to the scheme, multiple layers of supporting materials are arranged between the heat sink and the chip, and heat resistance with different degrees exists to influence heat dissipation.
For another example, chinese patent with the grant publication number CN 114334872B discloses a power electronic device IGBT module with a heat dissipation structure and a method for manufacturing the same, including a bonding wire, an IGBT chip, an FRD chip, a solder layer, a DBC substrate, a thermally conductive grease layer, a heat dissipation structure, and a micropump; the heat dissipation structure comprises a micro-channel copper substrate with AlSiC dielectric layers processed on two sides. The scheme still has multi-layer obstruction between the heat radiation structure and the chip, and has different degrees of thermal resistance to influence heat radiation.
Therefore, in order to achieve better heat dissipation effect, it is necessary to improve the existing heat dissipation technology to solve the deficiencies of the prior art.
Disclosure of Invention
The invention aims to provide an IGBT module and a manufacturing process thereof, which are used for solving the problems in the prior art, and the connection of a copper heat sink and a copper substrate is realized by utilizing the connection of a first copper nano burr and a second copper nano burr, so that the connection compactness of the copper heat sink and the copper substrate can be improved, the thermal resistance is reduced, the heat transfer effect is improved, and on the basis, the heat dissipation close to a heat source is realized by utilizing the communication of a first cooling flow channel and a second cooling flow channel, and the heat dissipation effect is further improved.
In order to achieve the above object, the present invention provides the following solutions:
the invention provides an IGBT module, which comprises a copper heat sink, a copper substrate, a BPSG insulating layer, a copper layer and a chip which are sequentially connected, wherein a first copper nano burr is arranged on a connecting surface of the copper heat sink, which faces the copper substrate, a second copper nano burr is arranged on a connecting surface of the copper substrate, which faces the copper heat sink, the first copper nano burr is directly inserted and connected with the second copper nano burr, a first cooling runner which is vertically distributed is arranged in the copper heat sink, a second cooling runner which is transversely distributed is arranged in the copper substrate, the first cooling runner and the second cooling runner are communicated after the copper substrate is connected with the copper heat sink, and a cooling medium flows in the first cooling runner and the second cooling runner.
Preferably, the first copper nano burrs are arranged at intervals in a segmented mode, the area ratio of the first copper nano burrs to the connecting surface is 1:4-1:2, the second copper nano burrs are arranged at intervals in a segmented mode, the area ratio of the second copper nano burrs to the connecting surface is 1:4-1:2, and the first copper nano burrs and the second copper nano burrs are fixed together in a low-temperature direct insertion or pressure direct insertion mode.
Preferably, the number of the first copper nano burrs and the second copper nano burrs in each section is not less than 50, and the length is not less than 1/2 of the thickness of the copper substrate.
Preferably, the chip comprises an IGBT chip and an FRD chip, the IGBT chip is connected with the FRD chip through bonding wires, and the IGBT chip and the FRD chip are connected on the copper layer through a solder layer.
Preferably, the copper substrate is preset with nano-bumps, and the nano-bumps are spheres, tetrahedrons or hexahedrons.
Preferably, the bottoms of the first cooling flow channels are connected with the same inlet channel, and the inlet channel gradually tapers from the proximal end to the distal end.
The invention also provides a manufacturing process of the IGBT module, which comprises the following steps:
step 1, presetting a first cooling flow channel in a copper heat sink, presetting a second cooling flow channel in a copper substrate, and processing a first copper nano burr on the copper heat sink and a second copper nano burr on the copper substrate by micro-nano processing the copper heat sink and the copper substrate;
step 2, sequentially arranging a BPSG insulating layer, a copper layer and a chip on the copper substrate;
and 3, connecting the first copper nano burrs with the second copper nano burrs in an in-line manner, and communicating the first cooling flow passage with the second cooling flow passage to realize the integration of the whole IGBT module.
Preferably, step 2 includes:
step 2.1, depositing BPSG (binary phase shift keying) on a copper substrate with preset nano bumps at 750-850 ℃ by TEOS (TEOS), TEB (TEPO) to form a BPSG insulating layer;
and 2.2, performing laser annealing at 750-950 ℃ to soften the BPSG insulating layer at high temperature, and filling gaps formed by a deposition process.
Preferably, step 2 includes:
step 2.3, preparing a copper seed crystal layer on the surface of the BPSG insulating layer by sputtering;
and 2.4, depositing the copper layer on the copper seed crystal layer at a high temperature.
Preferably, step 2 includes:
step 2.5, patterning the copper layer by adopting wet etching, and etching out the required layout;
and 2.6, attaching the chip and the solder layer to the surface of the copper layer, and realizing electrical connection through high-temperature reflow and bonding to form the whole packaging structure.
Compared with the prior art, the invention has the following technical effects:
(1) According to the invention, the connection of the copper heat sink and the copper substrate is realized by utilizing the connection of the first copper nano burrs and the second copper nano burrs, so that the connection compactness of the copper heat sink and the copper substrate can be improved, the thermal resistance is reduced, and the heat transfer effect is improved;
(2) In addition, when the BPSG insulating layer is manufactured, BPSG is deposited on a copper substrate with preset nano bumps at 750-850 ℃ by using TEOS, TEB and TEPO to form the BPSG insulating layer, and then laser annealing is carried out at 750-950 ℃, so that the BPSG insulating layer is softened at high temperature, reflows and fills gaps formed by the deposition process, and the preset nano bumps are covered on the copper substrate at high temperature, so that strong binding force between the BPSG insulating layer and the copper substrate is realized, and the reliability of the whole module under severe environment can be enhanced by adopting the binding force of a solder layer scheme;
(3) In the traditional IGBT module, a chip is attached to a DBC printed with a solder layer in a manufacturing process, and then the attached whole is attached to a copper substrate, and the bonding is realized through a reflow process; then the combined whole is put on a heat sink through heat conduction silicone grease, and the traditional process is a combined process from top to bottom as a whole; compared with the original structure, the IGBT module reduces the ceramic layer, the lower copper layer, the solder layer and the heat conduction silicone grease, replaces the DBC layer and the solder layer with the BPSG layer, and combines the semiconductor chip integration process with the packaging structure in a vertical view from bottom to top in the manufacturing process, thereby realizing stronger integration level.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a split state structure of a copper heat sink and a copper substrate of an IGBT module;
fig. 2 is a schematic diagram of a structure of the IGBT module of the present invention after the copper heat sink and the copper substrate are directly connected;
FIG. 3 is a schematic diagram of a copper heat sink and copper substrate in a perspective view according to the present invention;
FIG. 4 is a side view of FIG. 3;
FIG. 5 is a schematic view of the internal structure of FIG. 3;
FIG. 6 is an enlarged view of a structure of a BPSG insulating layer and a copper seed layer on a copper substrate according to the present invention;
FIG. 7 is an enlarged view of the copper layer of FIG. 6;
fig. 8 is a diagram showing a heat dissipation simulation effect of a conventional IGBT module;
fig. 9 is a diagram of a heat dissipation simulation effect of an IGBT module according to the present invention;
wherein, 1, bonding wire; 2. an IGBT chip; 3. an FRD chip; 4. a solder layer; 5. a copper layer; 6. a BPSG insulating layer; 7. a copper substrate; 71. a second cooling flow path; 72. a second copper nanoburr; 8. a copper heat sink; 81. a first cooling flow passage; 82. a first copper nanoburr; 9. an inlet passage; 10. and a copper seed layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide an IGBT module and a manufacturing process thereof, which are used for solving the problems in the prior art, and realizing the connection of a copper heat sink and a copper substrate by utilizing the connection of a first copper nano burr and a second copper nano burr, so that the connection compactness of the copper heat sink and the copper substrate can be improved, the thermal resistance is reduced, the heat transfer effect is improved, and on the basis, the heat dissipation close to a heat source is realized by utilizing the communication of a first cooling flow channel and a second cooling flow channel, and the heat dissipation effect is further improved.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
As shown in fig. 1 to 7, the present invention provides an IGBT module, which includes a copper heat sink 8, a copper substrate 7, a BPSG insulating layer 6, a copper layer 5, and a chip connected in sequence, wherein, except for the connection mode between the copper heat sink 8 and the copper substrate 7, the connection modes of other layers can be conventional, such as bonding or welding. For the copper heat sink 8 and the copper substrate 7, specifically, the connection surface of the copper heat sink 8 facing the copper substrate 7 is provided with the first copper nano burr 82, the connection surface of the copper substrate 7 facing the copper heat sink 8 is provided with the second copper nano burr 72, the first copper nano burr 82 and the second copper nano burr 72 are nano-scale burr structures manufactured on the copper heat sink 8 and the copper substrate 7, the first copper nano burr 82 and the second copper nano burr 72 are connected in a staggered and penetrated manner after being directly connected, and the first copper nano burr 82 and the second copper nano burr 72 are contacted by friction force to form a tight connection force, so that an approximately integrated connection structure is formed between the copper heat sink 8 and the copper substrate 7, heat can be mutually transferred between the copper heat sink 8 and the copper substrate 7 through the copper nano burr, and the thermal resistance between layers is effectively reduced in a surface-to-surface direct contact connection mode relative to the copper heat sink 8 and the copper substrate 7.
The copper heat sink 8 is internally provided with the first cooling flow channels 81 which are vertically distributed, so that the copper heat sink 8 forms a vertically penetrating structure, the copper substrate 7 is internally provided with the second cooling flow channels 71 which are transversely distributed, a cooling medium can directly reach the vicinity of a heat source (chip), the first cooling flow channels 81 and the second cooling flow channels 71 are microporous heat dissipation flow channels, the cross-section structure can be in the shape of a circle, a rectangle, a diamond and the like, the first cooling flow channels 81 and the second cooling flow channels 71 are communicated after the copper substrate 7 is connected with the copper heat sink 8, the cooling medium flows through the first cooling flow channels 81 and the second cooling flow channels 71, the heat dissipation path is less, and the heat generated by the chip is taken away better to dissipate heat. The radius of the first cooling flow channel 81 in the copper heat sink 8 may be 0.5 to 1.5mm, preferably 1mm, and the number may be 50 to 150, preferably 100.
In summary, the connection of the copper heat sink 8 and the copper substrate 7 is realized by using the connection of the first copper nanoburr 82 and the second copper nanoburr 72, so that the connection compactness of the copper heat sink 8 and the copper substrate 7 can be improved, the thermal resistance is reduced, the heat transfer effect is improved, and on the basis, the heat dissipation close to a heat source (chip) can be realized by using the communication of the first cooling flow passage 81 and the second cooling flow passage 71, and the heat dissipation effect is further improved. The invention solves the problems of heavy weight, long path, weak heat dissipation performance, poor insulating capability and poor reliability in harsh environment of the existing IGBT module heat dissipation system, thereby effectively improving the reliability and the service life of the IGBT module.
As shown in fig. 1 and 2, when the first copper nanoburr 82 and the second copper nanoburr 72 are provided, a manner of arranging the first cooling flow passage 81 and the second cooling flow passage 71 at intervals may be adopted, and passages communicating with each other are provided in the intervals. Specifically, the first copper nanofillers 82 are arranged on the copper heat sink 8 at intervals in a segmented manner, and may occupy an area ratio of 1:4-1:2, preferably 1:3, of the connecting surface. The second copper nanoburrs 72 are arranged on the copper substrate 7 at intervals in a segmented manner, and can occupy an area ratio of 1:4-1:2, preferably 1:3, of the connecting surface. The positions of the first copper nanoburrs 82 and the second copper nanoburrs 72 which are respectively arranged in a segmented manner are corresponding, the first copper nanoburrs 82 and the second copper nanoburrs 72 are fixed together in a low-temperature direct insertion or pressure direct insertion mode, and then connection of the copper heat sink 8 and the copper substrate 7 and communication of the first cooling flow channel 81 and the second cooling flow channel 71 are achieved (shown in reference to fig. 2).
The dimensions of the first copper nanoburr 82 and the second copper nanoburr 72 may be kept consistent, for example, each having a diameter of 1 to 10 μm, and the distance between adjacent copper nanoburrs is 1 to 10 μm. Meanwhile, in order to ensure the connection tightness and stability between the first copper nanoburr 82 and the second copper nanoburr 72, the number of the first copper nanoburr 82 and the second copper nanoburr 72 in each section is not less than 50, and the length is not less than 1/2 of the thickness of the copper substrate 7.
As shown in fig. 1 and 2, the chip includes an IGBT chip 2 and an FRD chip 3, the IGBT chip 2 and the FRD chip 3 are connected by a bonding wire 1, and the IGBT chip 2 and the FRD chip 3 are connected on a copper layer 5 by a solder layer 4.
The surface of the copper substrate 7, which is far away from the copper heat sink 8, is preset with nano-bumps, and the nano-bumps can be in the shape of spheres, tetrahedrons or hexahedrons. By providing the nanobumps, the bonding force between the BPSG insulating layer 6 and the copper substrate 7 can be enhanced, and the BPSG insulating layer 6 can be processed to the surface of the copper substrate 7 by a manufacturing process of deposition CVD. The thickness of the BPSG insulating layer 6 can be controlled to be between 0.5 and 5mm, and the insulation breakdown capability of the whole module can be enhanced by insulating with the BPSG insulating layer 6. The BPSG insulating layer 6 has high reliability, high thermal conductivity and ultra-high insulating ability, and can improve the reliability, heat dissipation and insulating ability of the module.
As shown in fig. 4 and 5, the bottoms of the plurality of first cooling passages 81 are connected to the same inlet passage 9, and the inlet passage 9 gradually tapers from the proximal end to the distal end, and may be formed in a trapezoidal structure or a wedge structure. In this way, the pressing and guiding action of the flow direction of the cooling medium can be formed by the trapezoidal structure or the wedge structure when the cooling medium is introduced into the inlet channel 9, so that the cooling medium can be better introduced from the inlet channel 9 into the first cooling flow passage 81.
The invention also provides a manufacturing process of the IGBT module, which is described in the specification, with reference to figures 1-7, and comprises the following steps:
step 1, a first cooling flow channel 81 is preset in a copper heat sink 8, the first cooling flow channel 81 penetrates through the copper heat sink 8 from top to bottom, a second cooling flow channel 71 is preset in a copper substrate 7, and the second cooling flow channel 71 penetrates transversely and is closer to the chip position. By micro-nano processing of the copper heat sink 8 and the copper substrate 7, the first copper nanoburr 82 is processed on the copper heat sink 8, the second copper nanoburr 72 is processed on the copper substrate 7, the positions of the first copper nanoburr 82 and the second copper nanoburr 72 correspond, and the first cooling flow passage 81 and the second cooling flow passage 71 are avoided when the first copper nanoburr 82 and the second copper nanoburr 72 are arranged.
Step 2, a BPSG insulating layer 6, a copper layer 5 and a chip are sequentially disposed on a copper substrate 7 in a conventional manner or a manner described later.
And 3, directly inserting and connecting the first copper nano burrs 82 and the second copper nano burrs 72, wherein a low-temperature direct inserting or pressure direct inserting mode can be adopted, and after direct inserting and connecting, the first cooling flow passage 81 and the second cooling flow passage 71 are communicated, so that the integration of the whole IGBT module is realized.
Further, in step 2, when the copper substrate 7 and the BPSG insulating layer 6 are connected, the following is included:
step 2.1, TEOS, TEB and TEPO deposit BPSG on the copper substrate 7 with preset nano-bumps at 750-850 ℃ to form a BPSG insulating layer 6.
And 2.2, performing laser annealing at 750-950 ℃ to soften the BPSG insulating layer 6 at high temperature, and filling gaps formed by the deposition process.
By covering the copper substrate 7 at high temperature and presetting the nano bumps, strong bonding force between the BPSG insulating layer 6 and the copper substrate 7 can be realized, bonding force of a solder layer scheme is far exceeded, and reliability of the whole module in a severe environment can be enhanced.
As shown in fig. 6 and 7, when the BPSG layer 6 and the copper layer 5 are connected in step 2, the following is included:
and 2.3, preparing a copper seed crystal layer 10 on the surface of the BPSG insulating layer 6 by sputtering.
Step 2.4, depositing a copper layer 5 on the copper seed layer 10 at high temperature.
In addition, when the chip is connected to the copper layer 5 in the step 2, the following is included:
and 2.5, patterning the copper layer 5 by adopting wet etching, and etching to obtain the required layout. And 2.6, attaching the chip and the solder layer 4 to the surface of the copper layer 5, and realizing electrical connection through high-temperature reflow and bonding to form the whole packaging structure.
As shown in fig. 8, a heat dissipation simulation effect diagram of a conventional IGBT module is shown, where the conventional IGBT module structure includes a heat sink, a heat conductive silicone grease, a copper substrate, solder, DBC (upper copper layer+ceramic layer+lower copper layer), solder and a chip, which are sequentially arranged from bottom to top. The manufacturing process is as follows: the chip is stuck to the DBC printed with the solder layer, and then the stuck whole is stuck to the copper substrate, and the bonding is realized through a reflow process; and then putting the combined whole on a heat sink through heat-conducting silicone grease. The conventional process is a top-down bonding process as a whole. Fig. 9 shows a heat dissipation simulation effect diagram of an IGBT module according to the present invention, in which a ceramic layer, a lower copper layer, a solder layer, and a heat conductive silicone grease are reduced, and a BPSG layer is used instead of a DBC layer and a solder layer, compared with the original structure. In the manufacturing process (see the foregoing), the integrated process is a bottom-up integrated process in view of the fact that the semiconductor chip integrated process and the packaging structure are combined together, so that a stronger integration level is achieved. As can be seen by comparing fig. 8 and fig. 9, the temperature is lower than that of the conventional structure as a whole after the structure of the invention is adopted, and the heat dissipation effect is obvious. In practice, the IGBT module solves the problems of heavy weight, long path, weak heat dissipation performance, poor insulating capability and poor reliability in a severe environment of the traditional IGBT module heat dissipation system, improves the reliability and the service life of the module, and improves the heat dissipation effect by 17%.
The principles and embodiments of the present invention have been described in detail with reference to specific examples, which are provided to facilitate understanding of the method and core ideas of the present invention; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.

Claims (10)

1. An IGBT module, characterized by: including copper heat sink, copper base plate, BPSG insulating layer, copper layer and the chip that connect in order, copper heat sink orientation copper base plate's joint surface is provided with first copper nanometer burr, copper base plate orientation copper heat sink's joint surface is provided with second copper nanometer burr, first copper nanometer burr with second copper nanometer burr is connected directly, be provided with the first cooling runner of vertical distribution in the copper heat sink, be provided with the second cooling runner of horizontal distribution in the copper base plate, first cooling runner with the second cooling runner is in the copper base plate with copper heat sink connects the back and communicates with each other, and the coolant medium is in first cooling runner with in the second cooling runner circulation.
2. The IGBT module of claim 1 wherein: the first copper nano burrs are arranged at intervals in a segmented mode, the area ratio of the first copper nano burrs to the connecting surface is 1:4-1:2, the second copper nano burrs are arranged at intervals in a segmented mode, the area ratio of the second copper nano burrs to the connecting surface is 1:4-1:2, and the first copper nano burrs and the second copper nano burrs are fixed together in a low-temperature direct inserting or pressure direct inserting mode.
3. The IGBT module of claim 2 wherein: the number of the first copper nano burrs and the second copper nano burrs in each section is not less than 50, and the length is not less than 1/2 of the thickness of the copper substrate.
4. The IGBT module of claim 1 wherein: the chip comprises an IGBT chip and an FRD chip, wherein the IGBT chip is connected with the FRD chip through a bonding wire, and the IGBT chip is connected with the FRD chip through a solder layer on the copper layer.
5. The IGBT module of claim 1 wherein: the copper substrate is preset with nano-bumps, and the nano-bumps are spheres, tetrahedrons or hexahedrons.
6. The IGBT module of claim 1 wherein: the bottoms of the first cooling flow passages are connected with the same inlet passage, and the inlet passage gradually contracts from the near end to the far end.
7. A process for manufacturing an IGBT module according to any one of claims 1 to 6, comprising the following:
step 1, presetting a first cooling flow channel in a copper heat sink, presetting a second cooling flow channel in a copper substrate, and processing a first copper nano burr on the copper heat sink and a second copper nano burr on the copper substrate by micro-nano processing the copper heat sink and the copper substrate;
step 2, sequentially arranging a BPSG insulating layer, a copper layer and a chip on the copper substrate;
and 3, connecting the first copper nano burrs with the second copper nano burrs in an in-line manner, and communicating the first cooling flow passage with the second cooling flow passage to realize the integration of the whole IGBT module.
8. The IGBT module manufacturing process according to claim 7, wherein step 2 includes:
step 2.1, depositing BPSG (binary phase shift keying) on a copper substrate with preset nano bumps at 750-850 ℃ by TEOS (TEOS), TEB (TEPO) to form a BPSG insulating layer;
and 2.2, performing laser annealing at 750-950 ℃ to soften the BPSG insulating layer at high temperature, and filling gaps formed by a deposition process.
9. The IGBT module manufacturing process according to claim 8, wherein step 2 includes:
step 2.3, preparing a copper seed crystal layer on the surface of the BPSG insulating layer by sputtering;
and 2.4, depositing the copper layer on the copper seed crystal layer at a high temperature.
10. The IGBT module manufacturing process according to claim 9, wherein step 2 includes:
step 2.5, patterning the copper layer by adopting wet etching, and etching out the required layout;
and 2.6, attaching the chip and the solder layer to the surface of the copper layer, and realizing electrical connection through high-temperature reflow and bonding to form the whole packaging structure.
CN202311013017.6A 2023-08-14 2023-08-14 IGBT module and manufacturing process thereof Active CN116741723B (en)

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CN105679683A (en) * 2016-01-15 2016-06-15 华中科技大学 Copper nanorod based copper-tin-copper bonding process and structure
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