CN210403710U - IGBT packaging structure of middle liquid phase cooling double-sided welding chip - Google Patents
IGBT packaging structure of middle liquid phase cooling double-sided welding chip Download PDFInfo
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- CN210403710U CN210403710U CN201921595031.0U CN201921595031U CN210403710U CN 210403710 U CN210403710 U CN 210403710U CN 201921595031 U CN201921595031 U CN 201921595031U CN 210403710 U CN210403710 U CN 210403710U
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Abstract
The utility model relates to an IGBT packaging structure of two-sided welding chip of intermediate liquid phase cooling, packaging structure cover copper ceramic substrate DBC001 from top to bottom, heat sink material casing 002, heat dissipation cylinder 003, water inlet 004 and delivery port 005, the welding has the IGBT chip on covering copper ceramic substrate DBC001 from top to bottom, heat sink material casing 002 is that welding forms after two upper and lower panel processing, cover and link to each other through nanometer silver soldering paste 006 between copper ceramic substrate DBC001 and the heat sink material casing 002 from top to bottom, heat dissipation cylinder 003 obtains with heat sink material casing 002 as an organic whole processing, heat sink material casing 002 is inside to be gone out to flow by the water inlet outlet and has the cooling liquid. The IGBT packaging structure has super-strong heat dissipation capacity while ensuring double-sided welding of the chip, can meet the requirement of higher packaging power density, and reduces water cooling cost.
Description
Technical Field
The utility model relates to a high-power module class encapsulation field particularly, indicates a IGBT packaging structure of middle liquid phase cooling double-sided welding chip.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device consisting of a BJT bipolar transistor (BJT) and a Metal Oxide Semiconductor (MOS) insulated gate Field Effect Transistor (FET), and has the advantages of both high input impedance of the MOSFET and low conduction voltage drop of the GTR. The IGBT is a core device for energy conversion and transmission, commonly known as the "CPU" of a power electronic device, and is used as a strategic emerging industry in the country, and has a wide application in the fields of rail transit, smart grid, aerospace, electric vehicles, new energy equipment, and the like.
With the rapid development of the trend of miniaturization and higher power density of the IGBT device, the current carried in the circuit is larger, and the heat generated thereby is more, so that better heat dissipation capability is required. In the industry, most IGBT packaging structures are directly welded with chips on a substrate and then integrally assembled on a water-cooling base made of silicon-aluminum materials to dissipate heat, and the structure cannot meet the requirements of double-side welding chips appearing nowadays. Therefore, it is urgently needed to develop an IGBT package structure with low cost, simple structure and better heat dissipation performance.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an IGBT packaging structure of middle liquid phase cooling double-sided welding chip.
To achieve the purpose, the utility model adopts the following technical proposal:
provides an IGBT packaging structure of a middle liquid phase cooling double-sided welding chip, which comprises an upper copper-clad ceramic substrate DBC001, a heat sink material shell 002, a heat dissipation cylinder 003, a water inlet 004 and a water outlet 005, the upper copper-clad ceramic substrate DBC001 and the lower copper-clad ceramic substrate DBC001 are welded with IGBT chips, the heat sink material shell 002 is formed by welding an upper plate and a lower plate after being processed, the upper copper-clad ceramic substrate DBC001 and the heat sink material shell 002 are connected through nano silver soldering paste 006, the heat dissipation column 003 and the heat sink material shell 002 are integrally formed, the heat sink material shell 002 is respectively provided with a water inlet 004 and a water outlet 005, the heat sink material shell 002 is internally provided with cooling liquid, the cooling liquid enters the heat sink material shell 002 from the water inlet 004, the cooling liquid flows out of the heat sink material shell 002 through the water outlet 005, and the cooling liquid in the heat sink material shell 002 is in a circulating flowing state.
Further, the upper and lower copper clad ceramic substrates DBC001 are aluminum nitride substrate copper clad substrates.
Further, the heat sink material shell 002 and the heat dissipation cylinder 003 are made of molybdenum copper, tungsten copper, and silicon aluminum.
Further, the heat dissipation cylinder 003 is in the shape of a rectangular parallelepiped, a cylinder or a cone.
Further, the cooling liquid is made of deionized water and an antifreeze medium. Can play a cooling role.
The utility model has the advantages that: the heat sink material shell is made of materials such as molybdenum copper, tungsten copper and silicon aluminum, has excellent heat dissipation capacity, has a low thermal expansion coefficient, is matched with the thermal expansion coefficient of the DBC substrate of aluminum nitride, and prevents thermal stress cracking. And a heat dissipation cylinder is arranged in the shell, so that the contact area of the shell and cooling liquid is increased, and the heat dissipation performance is improved. The utility model discloses when having guaranteed high-efficient heat-sinking capability, simple structure easily encapsulates, has increased market competition.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments of the present invention will be briefly described below. It is obvious that the drawings described below are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be obtained from these drawings without inventive effort.
Fig. 1 is a schematic structural view of the present invention;
in the drawing, 001 is upper and lower copper-clad ceramic substrates (DBC), 002 is a heat sink material shell, 003 is a heat dissipation cylinder, 004 is a water inlet, 005 is a water outlet, and 006 is nano-silver soldering paste.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments with reference to the accompanying drawings.
Wherein the showings are for the purpose of illustration only and are shown by way of illustration only and not in actual form, and are not to be construed as limiting the present patent; for a better understanding of the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if the terms "upper", "lower", "left", "right", "inner", "outer", etc. are used to indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, it is only for convenience of description and simplification of description, but it is not indicated or implied that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are used only for illustrative purposes and are not to be construed as limiting the present patent, and the specific meaning of the terms will be understood by those skilled in the art according to the specific circumstances.
In the description of the present invention, unless otherwise explicitly specified or limited, the term "connected" or the like, if appearing to indicate a connection relationship between the components, is to be understood broadly, for example, as being either a fixed connection, a detachable connection, or an integral part; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or may be connected through one or more other components or may be in an interactive relationship with one another. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1, the intermediate liquid phase cooling double-sided welding chip IGBT package structure includes an upper copper clad ceramic substrate DBC001 and a lower copper clad ceramic substrate DBC001, and an aluminum nitride substrate copper clad substrate is selected, and a chip is welded on the substrate because the thermal expansion coefficient of the substrate copper clad substrate is matched with the chip and the heat dissipation capability is good; the heat sink material shell 002 is formed by processing and welding an upper plate and a lower plate by using tungsten copper as a metal, and a rectangular heat dissipation cylinder 003 is processed on the heat sink material shell 002 because a rectangular body is easy to process; then the upper and lower copper-clad ceramic substrates DBC001 and the heat sink material shell 002 are connected through the nano-silver soldering paste 006; deionized water is introduced from the water inlet 004 and flows out from the water outlet 005, so that the circulating flow state is maintained. Finally putting into use. The use effect shows that the heat dissipation capability is good, and the heat dissipation requirement of a double-side welding chip can be met.
It should be understood that the above-described embodiments are merely illustrative of the preferred embodiments of the present invention and the technical principles thereof. It will be understood by those skilled in the art that various modifications, equivalents, changes, and the like can be made to the present invention. However, these modifications are within the scope of the present invention as long as they do not depart from the spirit of the present invention. In addition, certain terms used in the specification and claims of the present application are not limiting, but are used merely for convenience of description.
Claims (5)
1. The utility model provides a middle liquid phase cooling double-sided welding chip's IGBT packaging structure which characterized in that: comprises an upper copper-clad ceramic substrate and a lower copper-clad ceramic substrate (001), a heat sink material shell (002), a heat dissipation column body (003), a water inlet (004) and a water outlet (005), the upper copper-clad ceramic substrate (001) and the lower copper-clad ceramic substrate (001) are welded with IGBT chips, the heat sink material shell (002) is formed by welding an upper plate and a lower plate after processing, nano-silver soldering paste (006) is arranged between the upper copper-clad ceramic substrate (001) and the lower copper-clad ceramic substrate (002) and is connected with the heat sink material shell (002) through the nano-silver soldering paste (006), the heat dissipation column (003) and the heat sink material shell (002) are integrally processed and formed, the heat sink material shell (002) is respectively provided with a water inlet (004) and a water outlet (005), the heat sink material shell (002) is internally provided with cooling liquid, the cooling liquid enters the heat sink material shell (002) from the water inlet (004), the cooling liquid flows out of the heat sink material shell (002) from the water outlet (005).
2. The IGBT packaging structure of the middle liquid phase cooling double-sided welding chip according to claim 1, is characterized in that: the upper copper-clad ceramic substrate and the lower copper-clad ceramic substrate (001) are made of aluminum nitride matrix copper-clad substrates.
3. The IGBT packaging structure of the middle liquid phase cooling double-sided welding chip according to claim 1, is characterized in that: the heat sink material shell (002) and the heat dissipation column (003) are made of molybdenum copper, tungsten copper and silicon aluminum materials.
4. The IGBT packaging structure of the middle liquid phase cooling double-sided welding chip according to claim 1, is characterized in that: the heat dissipation cylinder (003) is cuboid or cylinder or pyramid.
5. The IGBT packaging structure of the middle liquid phase cooling double-sided welding chip according to claim 1, is characterized in that: the cooling liquid is made of deionized water and an antifreeze medium.
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CN201921595031.0U CN210403710U (en) | 2019-09-24 | 2019-09-24 | IGBT packaging structure of middle liquid phase cooling double-sided welding chip |
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CN201921595031.0U CN210403710U (en) | 2019-09-24 | 2019-09-24 | IGBT packaging structure of middle liquid phase cooling double-sided welding chip |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111540717A (en) * | 2020-05-06 | 2020-08-14 | 晏新海 | Power module |
CN116741723A (en) * | 2023-08-14 | 2023-09-12 | 合肥阿基米德电子科技有限公司 | IGBT module and manufacturing process thereof |
-
2019
- 2019-09-24 CN CN201921595031.0U patent/CN210403710U/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111540717A (en) * | 2020-05-06 | 2020-08-14 | 晏新海 | Power module |
CN116741723A (en) * | 2023-08-14 | 2023-09-12 | 合肥阿基米德电子科技有限公司 | IGBT module and manufacturing process thereof |
CN116741723B (en) * | 2023-08-14 | 2023-11-03 | 合肥阿基米德电子科技有限公司 | IGBT module and manufacturing process thereof |
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