CN102683309B - Wafer scale plants adapter plate structure of ball indentation brush filling through hole and preparation method thereof - Google Patents
Wafer scale plants adapter plate structure of ball indentation brush filling through hole and preparation method thereof Download PDFInfo
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- CN102683309B CN102683309B CN201110061446.1A CN201110061446A CN102683309B CN 102683309 B CN102683309 B CN 102683309B CN 201110061446 A CN201110061446 A CN 201110061446A CN 102683309 B CN102683309 B CN 102683309B
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Abstract
Adapter plate structure of ball indentation brush filling through hole and preparation method thereof is planted the present invention relates to wafer scale.The invention discloses a kind of adapter plate structure, including：Perpendicular to the through hole of the switching plate surface；It is covered at least one layer of insulating barrier and layer of metal layer of the side wall of the through hole；It is embedded in a metal ball or metal segment in the through hole；The solder on the through hole vertical direction side metal ball or metal segment surface is covered in, and the solder is higher by switching plate surface；And it is formed at the intermetallic compound between the pinboard interior metal segment surface and solder and between solder and pinboard side-wall metallic layer；Wherein, the metal flat of the pinboard through hole vertical direction opposite side and the pinboard plane are in same level, and pass through rewiring and salient point and external connection.The present invention discloses a kind of method for preparing adapter plate structure.The method that metal ball or fine pellet are filled using the method for stencil printing and make salient point by the present invention, it is to avoid conventional method fills out copper and there are problems that bubble, and also eliminates grinding and polishing and need that the techniques such as salient point are fabricated separately.
Description
Technical field
The present invention relates to microelectronic packaging technology field, more particularly to one kind realizes silicon hole or glass using ball indentation brush is planted
Adapter plate structure of glass through hole filling and preparation method thereof, TSV skills are used to efficiently accomplish in three-dimension packaging or MEMS package
The interconnection structure of art.
Background technology
As requirement of the people to electronic product is to the development in the directions such as miniaturization, multi-functional, environment-friendly type, people make great efforts to seek
Ask and electronic system is more done to smaller, integrated level more and more higher, function is done more and more, more and more by force, thereby produces many new skills
Art, new material and new design, wherein Stacked Die Packaging technology and system in package (System-in-Package, SiP) skill
Art is exactly the Typical Representative of these technologies.
Three-dimensional packaging technology, refers on the premise of package body sizes are not changed, in Vertical Square in same packaging body
To the encapsulation technology for stacking two or more chip, its stacked package originating from flash memory (NOR/NAND) and SDRAM.And
Silicon perforation (Through Silicon Via, TSV) is to realize one of key technology in three-dimension packaging.It is relative that this is attributed to TSV
In traditional mutual contact mode, can be achieved total silicon encapsulation, it is mutually compatible with semiconductor CMOS process, and can equal proportion increase component it is close
Degree, reduces interconnection delay problem, realizes and interconnects at a high speed.
Silicon chip TSV has its unique distinction：1) silicon chip through-hole aperture is much smaller than printed circuit board through-hole aperture；2) silicon substrate
The depth-to-width ratio of piece through hole is much larger than the depth-to-width ratio of printed circuit board through-hole；3) density of silicon chip through hole is much larger than printed circuit board (PCB)
The density of through hole.Based on above feature, the processing of silicon chip micro through-hole is different from traditional processing method of through holes, therefore it grinds
Study carefully the development to MEMS and semiconductor technology to play an important role.
Traditional TSV manufacture craft is：1) deep hole is etched on silicon chip or silicon pinboard using the method for deep etching；
2) SiO is formed on the surface of silicon deep hole by the method for thermal oxide or deposition2Or SiN insulating barriers, for electric isolation；3) exist
The surface redeposition of insulating barrier is used for the barrier layer adhered to and barrier metal spreads, such as TiN, Ti, Ta；4) in the table on barrier layer
Face re-forms one layer of thin metal copper layer, for electroplating Seed Layer when filling out copper；5) metal is filled in deep hole, for conduction
Connection, general this metal is metallic copper, and fill method is plating；6) the excessive metal grinding of plating is polished, planarizing；7)
Silicon chip back side is thinned and exposes TSV to form through hole；8) metal redistribution layer and salient point are made.
But, because the technique of use is much all difficult to control to, on the yield rate of final product there is also influence, very
Problems are still had to many techniques, it is a crucial problem that wherein the through hole copper seed layer of high-aspect-ratio, which makes,.If
Deposited seed layer is poor in bottom hole portion coverage rate, can cause cavity occur during electro-coppering, not become through hole or have a strong impact on reliable
Property.It is difficult to the Seed Layer for the step coverage to have been formed using PECVD methods, ALD is extremely difficult industry slowly there is also deposition velocity
The shortcoming of change.There are Alchimer companies to research and develop a kind of brand-new eG methods to form the measured Seed Layer of matter in addition, mainly pass through
The method of electrochemistry completes processing procedure, and principle is complicated.And conventional method is all to fill out copper using plating in terms of copper is filled out, but due to needing
Copper is filled out in deep hole, on the one hand there is very high requirement to Seed Layer, is on the other hand also had to the control such as electroplating solution and electric current
Pole strict requirements, and big filling small hole is difficult to simultaneously while forming the copper core without hole bubble-free on same plate.
In addition, for the through hole of large aperture, electroplating time is very long, cost is high, and efficiency is low.
Because this traditional method is complicated, there are many difficulties, the yield rate and reliability to product are caused greatly
Influence.Various new techniques, material and fill method are also progressively suggested and discussed, for example with tungsten, conducting resinl comes
TSV holes are filled, Seed Layer and filling metal are formed using the method for chemical plating or electrochemical plating, is exactly and this hair in addition
It is bright it is related complete to fill a vacancy using the method for metal fibre material or metal ball is directly filled in hole, this method is in large aperture
In the case of can have good application.Such as patent US6589594B1 is mentioned, and is entered using deposition of solder or other conductor materials
Silicon hole, forms interconnection after backflow；And US 2006/0009029A1 are also mentioned, conductor ball is inserted in silicon hole, applies pressure
Form interconnection；US2010/0144137A1 utilizes capillarity, and interconnection up-down structure completes filling perforation simultaneously.But these methods are equal
In complex process, preparation time length and the high shortcoming of cost of manufacture.
The content of the invention
(1) technical problem to be solved
In view of this, it is a primary object of the present invention to provide one kind to realize that silicon hole or glass are logical using ball indentation brush is planted
Adapter plate structure of hole filling and preparation method thereof, to efficiently accomplish in three-dimension packaging or MEMS package using TSV technology
Interconnection structure.
(2) technical scheme
To reach above-mentioned purpose, the technical solution adopted by the present invention is as follows：
A kind of adapter plate structure, including：Perpendicular to the through hole of the switching plate surface；It is covered in the side wall of the through hole at least
One layer insulating and layer of metal layer；It is embedded in a metal ball or metal segment in the through hole；The through hole is covered in hang down
Nogata is to side metal ball or the solder on metal segment surface, and the solder is higher by switching plate surface；And it is formed at this turn
Intermetallic compound between fishplate bar interior metal segment surface and solder and between solder and pinboard side-wall metallic layer；Its
In, the metal flat and the pinboard plane of the pinboard through hole vertical direction opposite side pass through in same level
Rewiring and salient point and external connection.
A kind of method for preparing adapter plate structure, including：Blind hole is formed by etching in silicon chip upper surface；In the blind hole
Insulating barrier is made on hole wall, or further in the surface making diffusion impervious layer and wetting layer of the blind hole；Metal ball is passed through into print
Brush is implanted directly into the blind hole；One layer of scaling powder is coated in the top of metal ball；Solder ball is placed on the metal ball；High temperature
Metal ball is soaked after backflow, brazing filler metal melts, the space filled up between metal ball and through hole, while forming salient point on surface；By silicon
Piece is overturn, and salient point side is bonded temporarily with support substrate；Silicon chip back side is thinned until exposing part metals ball in silicon hole；System
Make redistribution layer and salient point；And the support substrate of dismantling obtains the silicon chip with filling hole with metal.
A kind of method for preparing adapter plate structure, including：Surface forms blind hole by etching on the glass sheet；In the blind hole
Hole wall on make diffusion impervious layer and wetting layer；Metal ball is implanted directly into the blind hole by printing；In the upper of metal ball
One layer of scaling powder of side's coating；Solder ball is placed on the metal ball；Metal ball is soaked after high temperature reflux, brazing filler metal melts, is filled up
Space between metal ball and through hole, while forming salient point on surface；Sheet glass is overturn, salient point side is faced with support substrate
Shi Jianhe；To sheet glass thinning back side until exposing part metals ball in silicon hole；Make redistribution layer and salient point；And dismantle
The support substrate obtains the sheet glass with filling hole with metal.
(3) beneficial effect
It is of the invention to be had the advantage that compared with copper method is filled out in common plating and other fill out copper method：
First, the present invention has broken away from traditional plating and has filled out in copper the difficulty that needs first to make Seed Layer, directly completes filling
Step, makes specific implementation more facilitate.
Second, can using the method for stencil printing by metal ball or fine pellet come the method filled and make salient point
There are problems that bubble to avoid conventional method from filling out copper, and also eliminate grinding and polishing and need that salient point is fabricated separately
Etc. technique.
3rd, the method cost that whole technique is used is low, it is easy to controls, is easy to scale of mass production.
4th, this switching that silicon hole or the filling of glass through hole are realized using ball indentation brush is planted that the present invention is provided is hardened
Structure and preparation method thereof, using the key technology for solving making TSV in three-dimension packaging, i.e., directly plants ball formation metal copper ball and fibre
Pellet, and inserted using the method for printing filling for conductive metal ball in TSV holes, so as to complete disposable filling perforation.
Brief description of the drawings
Fig. 1 a to Fig. 1 g are to be completed to plant ball printing process filling silicon hole according to the present invention, so as to complete the flow of TSV making
Schematic diagram.Wherein：
Wafer scale silicon slide glasses of the 101- using silicon as matrix, or pinboard, are in the present invention making TSV silicon substrate version；
102- is in the insulating barrier of TSV side wall formation, the surface-treated layer such as adhesion layer and wetting layer；
Copper balls of the 103- to fill TSV；
104- is used to the scaling powder that fine pellet is combined very well with copper ball and pad；
105- draws TSV to be connected with copper ball and makes the fine pellet of salient point；
The temporary support piece that 106- silicon slide glasses reverse side is bonded when being thinned；
107- redistributes layer；
108- dielectric adhesion layers.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
In order to efficiently accomplish the interconnection structure that TSV technology is used in three-dimension packaging or MEMS package, what the present invention was provided
This adapter plate structure, including：Perpendicular to the through hole of the switching plate surface；It is covered at least one layer of insulation of the side wall of the through hole
Layer and layer of metal layer；It is embedded in a metal ball or metal segment in the through hole；It is covered in the through hole vertical direction one
Side metal ball or the solder on metal segment surface, and the solder is higher by switching plate surface；And be formed inside the pinboard
Intermetallic compound between metal segment surface and solder and between solder and pinboard side-wall metallic layer；Wherein, it is described
The metal flat and the pinboard plane of the pinboard through hole vertical direction opposite side pass through rewiring in same level
With salient point and external connection.
Wherein, the pinboard is made using silicon or glass, and the through hole is vertical through hole or conical through-hole.When the switching
When plate is made using silicon, the side wall deposition insulating barrier of the through hole, the material that the insulating barrier is used at least includes SiYOXOr SiYNXIn
One kind, X, Y be natural number.The material that the metal level of the side wall for being covered in the through hole is used for Ni, Au, Ta, Ti, Pt,
One or more in Pd or TiN.The material that the metal segment is used is Cu, W or Ni.The pricker for being covered in segment surface
Material uses Sn, In or binary solder SnAg, SnCu, SnBi, SnIn or InAg, or ternary and polynary solder SnAgCu,
SnBiIn, Sn-1.8Ag-0.05Ni, Sn-0.7Cu-0.01Ni-Ge, 98.5Sn1Ag0.5Cu0.05Mn or
98.5Sn1Ag0.5Cu0.02Ce.The material that re-wiring layer is used during the rewiring is Cu or Al.Change between the metal
Compound is the combination of one or more of compounds, and the composition of the intermetallic compound includes one kind or several of side-wall metallic material
Kind, the one or more in solder composition, and metal ball material.
The present invention is completed simultaneously by the way that copper ball or solder ball printing process to be carried out to the quick filling perforation to large aperture TSV
It is prepared by salient point.Different from other methods, the present invention is that directly TSV blind holes are filled a vacancy, and will directly be made using ball-establishing method
Copper ball is inserted in TSV holes, then plants solder ball above copper ball, is filled up blind hole by flowing back, be this method eliminates conventional work
The technique of grinding and polishing is needed in skill after copper is filled out, the step of also filling out copper deposited seed layer without Common platings, Ke Yitong
When complete salient point prepare, and overleaf be thinned after can expose metallic copper and solder material, can further make again wiring layer and
It is prepared by salient point.A kind of convenient and efficient filling perforation method of final realization of the invention, is mainly used in the TSV of aperture large-size,
Particularly taper TSV.
Similarly, this method is also applied for glass through hole (through glass interposer) preparation.Due to glass
For insulator, therefore eliminate the preparation on insulating barrier and barrier layer.Other technological processes and the filling of above-mentioned silicon hole are completely the same.
Fig. 1 a to Fig. 1 g are to be completed to plant ball printing process filling silicon hole according to the present invention, so as to complete the flow of TSV making
Schematic diagram.
Step 1, by as shown in Figure 1a in the wafer scale silicon slide glass using silicon as matrix, or taper is formed on pinboard 101
After blind hole, the silicon substrate plate thickness can be 300-500 microns, and the depth of blind hole can be 30-150 microns, and a diameter of 50-150 is micro-
Rice.Then in hole wall one layer insulating 102 of formation, insulating barrier can be that thermal oxide or depositing operation are formed, and can be silica
Or silicon nitride.
Step 2, wetting metal level, such as Ni/Au, Ti/Au are prepared on the insulating layer.The metal levels such as wherein Ni or Ti are used for increasing
The cohesive force of strong and insulating barrier, Au, Pt, Pd is wetting layer, increases solder wetting.The method for forming adhesive wetting layer can be to splash
Penetrate, be deposited, a variety of method for manufacturing thin film such as chemical meteorology deposition, principal security forms wetting layer in side wall upper part point.
Step 3, the copper ball 103 planted is brushed in blind hole by printing technology, the diameter of ball depends on the diameter of blind hole,
Also it is corresponding between 50-150 microns, and need to make corresponding leakage according to silicon hole domain before using during type metal ball
Plate.
Step 4, as shown in Figure 1 b, 103 top brush of copper ball, one layer of scaling powder 104 in TSV holes.Changing scaling powder can be divided into admittedly
Body, liquids and gases.Auxiliary heat transfer is primarily served, oxide is removed, reduction is soldered material surface tension, removes and is soldered
Material surface greasy dirt, increase bonding area and preventing such as reoxidizes at the function of several aspects.Its dosage, which is depended primarily on, helps weldering
The type of agent, and the size and copper ball in aperture and the size of the fine pellet 106 of connection etc..
Step 5, as illustrated in figure 1 c, above the copper ball in TSV holes, after scaling powder brush is complete, using printing process by solder
Ball is planted on copper ball, and the composition of solder ball can be unitary or the bianry alloys such as Sn, SnAg, SnCu, and alloy element includes Ag,
Cu, Ni, Fe, Co, Mn, RE etc., such as Sn-1.8Ag-0.05Ni；Sn-0.7Cu-0.01Ni-Ge；
98.5Sn1Ag0.5Cu0.05Mn；98.5Sn1Ag0.5Cu0.02Ce etc..The size of the solder ball is fully filled with TSV holes with volume
And formation is defined higher than the salient point of silicon chip.
Step 6, as shown in Figure 1 d, after high temperature reflux, solder is coated on the surface of copper ball completely, and is fully filled with TSV
Hole, and form a solder bump on TSV surface.The temperature and time of backflow depends on the fine material composition used.
Step 7, as shown in fig. le, silicon slide glass is inverted, passes through dielectric adhesion layer 108 and one layer of temporary support matrix 106
It is linked.It can be glass or other resistant to elevated temperatures ceramics or semiconductor print to change supporting layer.
Step 8, as shown in Figure 1 f, the upper surface of silicon slide glass is thinned, until exposed portion copper ball.Thinned mode is change
Learn mechanical lapping, and polished surface.
Step 9, as shown in Figure 1 g, redistribution layer and salient point are made on silicon slide glass by technologies such as photolitographic depositions, most
After remove temporary support bonded layer 106.
By in addition, the center of metal copper ball can be also made up of polymer of other high temperature high voltage resistants etc., or other are conductive
Good metal material or semi-conducting material composition, are not limited to the metal ball of simply fine copper.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail it is bright, should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., should be included in the guarantor of the present invention
Within the scope of shield.
Claims (16)
1. a kind of adapter plate structure, it is characterised in that including：
Perpendicular to the through hole of the switching plate surface；
It is covered at least one layer of insulating barrier and layer of metal layer of the side wall of the through hole；
It is embedded in a metal ball or metal segment in the through hole；The metal ball or metal segment are directly put by printing
Enter in the through hole；
The solder on the through hole vertical direction side metal ball or metal segment surface is covered in, and the solder is higher by pinboard table
Face；And
Be formed between the pinboard interior metal segment surface and solder and solder and pinboard side-wall metallic layer between
Intermetallic compound；
Wherein, the metal flat of the pinboard through hole vertical direction opposite side and the pinboard plane be in same level,
And pass through rewiring and salient point and external connection；
The pinboard is made using silicon or glass, and the through hole is vertical through hole or conical through-hole；
When the pinboard is made using silicon, the side wall deposition insulating barrier of the through hole, the material that the insulating barrier is used at least includes
SiYOXOr SiYNXIn one kind, X, Y be natural number；
The material that the metal level of the side wall for being covered in the through hole is used is one kind in Ni, Au, Ta, Ti, Pt, Pd or TiN
Or it is several.
2. adapter plate structure according to claim 1, it is characterised in that the material that the metal segment is used for Cu, W or
Ni。
3. adapter plate structure according to claim 1, it is characterised in that the solder for being covered in segment surface using Sn,
In or binary solder SnAg, SnCu, SnBi, SnIn or InAg, or ternary and polynary solder SnAgCu, SnBiIn, Sn-
1.8Ag-0.05Ni, Sn-0.7Cu-0.01Ni-Ge, 98.5Sn1Ag0.5Cu0.05Mn or 98.5Sn1Ag0.5Cu0.02Ce.
4. adapter plate structure according to claim 1, it is characterised in that the material that re-wiring layer is used during the rewiring
Expect for Cu or Al.
5. adapter plate structure according to claim 1, it is characterised in that the intermetallic compound is one or more of chemical combination
The combination of thing, the composition of the intermetallic compound include one kind in the one or more of side-wall metallic material, solder composition or
It is several, and metal ball material.
6. a kind of method for preparing adapter plate structure described in claim 1, it is characterised in that including：
Blind hole is formed by etching in silicon chip upper surface；
Insulating barrier is made on the hole wall of the blind hole, or further in the surface making diffusion impervious layer and wetting layer of the blind hole；
Metal ball is implanted directly into the blind hole by printing；
One layer of scaling powder is coated in the top of metal ball；
Solder ball is placed on the metal ball；
Metal ball is soaked after high temperature reflux, brazing filler metal melts, the space filled up between metal ball and through hole, while forming convex on surface
Point；
By silicon wafer turnover, salient point side is set to be bonded temporarily with support substrate；
Silicon chip back side is thinned until exposing part metals ball in silicon hole；
Make redistribution layer and salient point；And
The support substrate of dismantling obtains the silicon chip with filling hole with metal；
The metal bulb diameter is close with the blind hole central diameter size；
The material that the diffusion impervious layer that the surface in the blind hole makes is used is described in the blind hole for Ni, Ti, TiN or Ta
The material that uses of wetting layer that makes of surface for Au, Pt or Pd；
It is described to be implanted directly into metal ball in the blind hole by printing, by directly printing or stencil printing mode is completed；
In the step of top in metal ball coats one layer of scaling powder, scaling powder is by stencil printing to metal ball
's.
7. the method for adapter plate structure is prepared according to claim 6, it is characterised in that the blind hole is taper or rectangle.
8. the method for adapter plate structure is prepared according to claim 6, it is characterised in that the material that the insulating barrier is used is extremely
Include Si lessYOXOr SiYNXIn one kind, X, Y be natural number.
9. the method for adapter plate structure is prepared according to claim 6, it is characterised in that described that solder ball is placed in the metal
In the step of on ball, solder ball is by stencil printing to metal ball.
10. preparing the method for adapter plate structure according to claim 6, it is characterised in that after high temperature reflux, solder is complete
The surface of metal ball is coated on, and is fully filled with TSV holes, and solder bump is formed on TSV surface.
11. the method for adapter plate structure is prepared according to claim 6, it is characterised in that the support substrate is glass, pottery
Porcelain or semiconductor chip, are bonded together by HTHP and ephemeral key rubber alloy or light-sensitive emulsion with front side of silicon wafer.
12. the method for adapter plate structure is prepared according to claim 6, it is characterised in that described silicon chip back side is thinned is adopted
With the method for cmp, it is ground to and is defined by exposed portion metal ball.
13. the method for adapter plate structure is prepared according to claim 12, it is characterised in that the silicon chip is thinned to 300
Micron is following.
14. prepare the method for adapter plate structure according to claim 6, it is characterised in that the making redistribution layer and
Salient point, using photoetching, deposition and electroplating technology.
15. the method for adapter plate structure is prepared according to claim 6, it is characterised in that described support substrate of dismantling is adopted
With HTHP, chemical mordant or illumination.
16. a kind of method for preparing adapter plate structure described in claim 1, it is characterised in that including：
Surface forms blind hole by etching on the glass sheet；
Diffusion impervious layer and wetting layer are made on the hole wall of the blind hole；
Metal ball is implanted directly into the blind hole by printing；
One layer of scaling powder is coated in the top of metal ball；
Solder ball is placed on the metal ball；
Metal ball is soaked after high temperature reflux, brazing filler metal melts, the space filled up between metal ball and blind hole, while forming convex on surface
Point；
Sheet glass is overturn, salient point side is bonded temporarily with support substrate；
To sheet glass thinning back side until exposing part metals ball in blind hole；
Make redistribution layer and salient point；And
The support substrate of dismantling obtains the sheet glass with filling hole with metal.
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| CN102937695B (en) * | 2012-10-19 | 2015-01-07 | 北京大学 | Silicon through-hole ultrathin wafer testing structure and testing method |
| CN104465504A (en) * | 2014-12-10 | 2015-03-25 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing process for interposer made of intermetallic compound filling material |
| CN105261602A (en) | 2015-09-16 | 2016-01-20 | 京东方科技集团股份有限公司 | Package structure of display panel, adapter plate, package method and display device |
| CN109888456B (en) * | 2019-02-27 | 2020-09-25 | 中国科学院微电子研究所 | Silicon-based horn packaging antenna system integrated structure and preparation method thereof |
| CN111106013B (en) * | 2019-10-31 | 2022-03-15 | 广东芯华微电子技术有限公司 | Preparation method of TMV structure, large-board fan-out heterogeneous integrated packaging structure and preparation method thereof |
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| CN101208798A (en) * | 2005-06-30 | 2008-06-25 | 英特尔公司 | Integrated circuit die containing metal- and particle-filled through-silicon vias |
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| JP3397689B2 (en) * | 1998-06-01 | 2003-04-21 | 株式会社東芝 | Multi-chip semiconductor device and method of manufacturing the same |
| JP2004228135A (en) * | 2003-01-20 | 2004-08-12 | Mitsubishi Electric Corp | Embedding method of metal into pore |
| JP2005259845A (en) * | 2004-03-10 | 2005-09-22 | Sharp Corp | Method for filling via with conductive paste |
| US20110042803A1 (en) * | 2009-08-24 | 2011-02-24 | Chen-Fu Chu | Method For Fabricating A Through Interconnect On A Semiconductor Substrate |
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