CN102683309A - Adapter plate structure for filling through hole by wafer-level ball planting printing and manufacturing method thereof - Google Patents
Adapter plate structure for filling through hole by wafer-level ball planting printing and manufacturing method thereof Download PDFInfo
- Publication number
- CN102683309A CN102683309A CN2011100614461A CN201110061446A CN102683309A CN 102683309 A CN102683309 A CN 102683309A CN 2011100614461 A CN2011100614461 A CN 2011100614461A CN 201110061446 A CN201110061446 A CN 201110061446A CN 102683309 A CN102683309 A CN 102683309A
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- Prior art keywords
- hole
- keyset
- metal
- solder
- ball
- Prior art date
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- 238000011049 filling Methods 0.000 title claims abstract description 22
- 238000007639 printing Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 93
- 239000002184 metal Substances 0.000 claims abstract description 93
- 238000000034 method Methods 0.000 claims abstract description 58
- 229910052802 copper Inorganic materials 0.000 claims abstract description 36
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims description 50
- 229910052710 silicon Inorganic materials 0.000 claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910000679 solder Inorganic materials 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 21
- 238000005516 engineering process Methods 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 16
- 238000009736 wetting Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 238000010992 reflux Methods 0.000 claims description 9
- 239000005357 flat glass Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000007943 implant Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910007637 SnAg Inorganic materials 0.000 claims description 3
- 229910008433 SnCU Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 239000003518 caustics Substances 0.000 claims 1
- 238000010017 direct printing Methods 0.000 claims 1
- 239000000839 emulsion Substances 0.000 claims 1
- 238000005286 illumination Methods 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 239000010949 copper Substances 0.000 abstract description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 32
- 230000008569 process Effects 0.000 abstract description 10
- 238000000227 grinding Methods 0.000 abstract description 4
- 238000005498 polishing Methods 0.000 abstract description 4
- 239000000835 fiber Substances 0.000 abstract description 2
- 238000005219 brazing Methods 0.000 abstract 4
- 239000000945 filler Substances 0.000 abstract 4
- 238000002360 preparation method Methods 0.000 description 11
- 238000005538 encapsulation Methods 0.000 description 6
- 238000007373 indentation Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- 239000008188 pellet Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000012356 Product development Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (23)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110061446.1A CN102683309B (en) | 2011-03-15 | 2011-03-15 | Wafer scale plants adapter plate structure of ball indentation brush filling through hole and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110061446.1A CN102683309B (en) | 2011-03-15 | 2011-03-15 | Wafer scale plants adapter plate structure of ball indentation brush filling through hole and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102683309A true CN102683309A (en) | 2012-09-19 |
CN102683309B CN102683309B (en) | 2017-09-29 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201110061446.1A Active CN102683309B (en) | 2011-03-15 | 2011-03-15 | Wafer scale plants adapter plate structure of ball indentation brush filling through hole and preparation method thereof |
Country Status (1)
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CN (1) | CN102683309B (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102937695A (en) * | 2012-10-19 | 2013-02-20 | 北京大学 | Silicon through-hole ultrathin wafer testing structure and testing method |
CN104465504A (en) * | 2014-12-10 | 2015-03-25 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing process for interposer made of intermetallic compound filling material |
CN105261602A (en) * | 2015-09-16 | 2016-01-20 | 京东方科技集团股份有限公司 | Package structure of display panel, adapter plate, package method and display device |
CN109888456A (en) * | 2019-02-27 | 2019-06-14 | 中国科学院微电子研究所 | Silicon substrate loudspeaker encapsulating antenna system integration structure and preparation method thereof |
CN111106013A (en) * | 2019-10-31 | 2020-05-05 | 广东芯华微电子技术有限公司 | Preparation method of TMV structure, large-board fan-out heterogeneous integrated packaging structure and preparation method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11345933A (en) * | 1998-06-01 | 1999-12-14 | Toshiba Corp | Multichip semiconductor device and its manufacture |
JP2004228135A (en) * | 2003-01-20 | 2004-08-12 | Mitsubishi Electric Corp | Embedding method of metal into pore |
JP2005259845A (en) * | 2004-03-10 | 2005-09-22 | Sharp Corp | Method for filling via with conductive paste |
CN101208798A (en) * | 2005-06-30 | 2008-06-25 | 英特尔公司 | Integrated circuit die containing metal- and particle-filled through-silicon vias |
US20110042803A1 (en) * | 2009-08-24 | 2011-02-24 | Chen-Fu Chu | Method For Fabricating A Through Interconnect On A Semiconductor Substrate |
-
2011
- 2011-03-15 CN CN201110061446.1A patent/CN102683309B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11345933A (en) * | 1998-06-01 | 1999-12-14 | Toshiba Corp | Multichip semiconductor device and its manufacture |
JP2004228135A (en) * | 2003-01-20 | 2004-08-12 | Mitsubishi Electric Corp | Embedding method of metal into pore |
JP2005259845A (en) * | 2004-03-10 | 2005-09-22 | Sharp Corp | Method for filling via with conductive paste |
CN101208798A (en) * | 2005-06-30 | 2008-06-25 | 英特尔公司 | Integrated circuit die containing metal- and particle-filled through-silicon vias |
US20110042803A1 (en) * | 2009-08-24 | 2011-02-24 | Chen-Fu Chu | Method For Fabricating A Through Interconnect On A Semiconductor Substrate |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102937695A (en) * | 2012-10-19 | 2013-02-20 | 北京大学 | Silicon through-hole ultrathin wafer testing structure and testing method |
CN102937695B (en) * | 2012-10-19 | 2015-01-07 | 北京大学 | Silicon through-hole ultrathin wafer testing structure and testing method |
CN104465504A (en) * | 2014-12-10 | 2015-03-25 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing process for interposer made of intermetallic compound filling material |
CN105261602A (en) * | 2015-09-16 | 2016-01-20 | 京东方科技集团股份有限公司 | Package structure of display panel, adapter plate, package method and display device |
US10614988B2 (en) | 2015-09-16 | 2020-04-07 | Boe Technology Group Co., Ltd. | Package structure of display panel, connecting board, package method and display device |
CN109888456A (en) * | 2019-02-27 | 2019-06-14 | 中国科学院微电子研究所 | Silicon substrate loudspeaker encapsulating antenna system integration structure and preparation method thereof |
CN111106013A (en) * | 2019-10-31 | 2020-05-05 | 广东芯华微电子技术有限公司 | Preparation method of TMV structure, large-board fan-out heterogeneous integrated packaging structure and preparation method thereof |
CN111106013B (en) * | 2019-10-31 | 2022-03-15 | 广东芯华微电子技术有限公司 | Preparation method of TMV structure, large-board fan-out heterogeneous integrated packaging structure and preparation method thereof |
Also Published As
Publication number | Publication date |
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CN102683309B (en) | 2017-09-29 |
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Effective date of registration: 20140108 Address after: 214135 Jiangsu province Wuxi City Linghu Road No. 200 Chinese Sensor Network International Innovation Park building D1 Applicant after: National Center for Advanced Packaging Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Applicant before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Effective date of registration: 20170816 Address after: 200331 room 155-2, ginkgo Road, Shanghai, Putuo District, China, 4 Applicant after: Shanghai State Intellectual Property Services Co.,Ltd. Address before: 214135 Jiangsu province Wuxi City Linghu Road No. 200 Chinese Sensor Network International Innovation Park building D1 Applicant before: National Center for Advanced Packaging Co.,Ltd. |
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Effective date of registration: 20191029 Address after: 214028 Jiangsu New District of Wuxi City Linghu Road No. 200 Chinese Sensor Network International Innovation Park building D1 Patentee after: National Center for Advanced Packaging Co.,Ltd. Address before: 200331 room 155-2, ginkgo Road, Shanghai, Putuo District, China, 4 Patentee before: Shanghai State Intellectual Property Services Co.,Ltd. |