CN102683309A - Adapter plate for filling through holes by wafer-level re-balling printing and manufacturing method thereof - Google Patents
Adapter plate for filling through holes by wafer-level re-balling printing and manufacturing method thereof Download PDFInfo
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- CN102683309A CN102683309A CN2011100614461A CN201110061446A CN102683309A CN 102683309 A CN102683309 A CN 102683309A CN 2011100614461 A CN2011100614461 A CN 2011100614461A CN 201110061446 A CN201110061446 A CN 201110061446A CN 102683309 A CN102683309 A CN 102683309A
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- solder
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910000679 solder Inorganic materials 0.000 claims description 42
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Images
Abstract
The invention relates to an adapter plate for filling through holes by wafer-level re-balling printing and a manufacturing method of the adapter plate. The invention discloses an adapter plate structure comprising through holes, at least one insulation layer and at least one metal layer, a metal ball or a metal segment, brazing filer, inter-metallic compound, wherein the through holes are vertical to the surface of the an adapter plate; the at least one insulation layer and the at least one metal layer are covered in the lateral walls of the through holes; the metal ball or the metal segment is inserted in the through hole; the brazing filler metal is covered on the surface of the metal ball or the metal segment at one side of the direction vertical to the through hole and higher than the surface of the adapter plate; and the inter-metallic compound is arranged between the surface of the metal segment arranged in the adapter plate and the brazing filler metal and between the brazing filler metal and the metal layer of the lateral wall of the adapter plate, wherein the metal plane at the other side of the vertical direction of the through hole of the adapter plate and the adapter plate plane are located in a same horizontal plane, and connected with external part through re-wiring and convex points. The invention further discloses a method for manufacturing the adapter plate structure. The invention adopts the leakage plate printing method, the method for filling with the metal ball or brazing filler metal balls, and the method for manufacturing convex point to avoid the bubble and hole problems caused by using traditional methods to fill coppers, and solves the problems of grinding, polishing and singly manufacturing convex points.
Description
Technical field
The present invention relates to the microelectronic packaging technology field, particularly a kind of utilization is planted ball indentation and is brushed keyset structure that realizes silicon through hole or the filling of glass through hole and preparation method thereof, to adopt the interconnection structure of TSV technology in effective completion three-dimension packaging or the MEMS encapsulation.
Background technology
Along with people's is to the requirement of the electronic product development to directions such as miniaturization, multi-functional, environment-friendly types; People make great efforts to seek to do electronic system more little, and integrated level is increasingly high, and function is done many more more; More and more stronger; Produced many new technologies, new material and new design thus, wherein (System-in-Package, SiP) technology is exactly these technological typical case representatives for laminated chips encapsulation technology and system in package.
Three-dimensional packaging technology is meant under the prerequisite that does not change package body sizes, in same packaging body, stacks the encapsulation technology of two above chips in vertical direction, and it originates from the stacked package of flash memory (NOR/NAND) and SDRAM.(Through Silicon Via is to realize one of key technology in the three-dimension packaging TSV) and silicon is bored a hole.This with respect to traditional mutual contact mode, can realize the total silicon encapsulation owing to TSV, and is compatible mutually with semiconductor CMOS technology, but and equal proportion increase density of components, reduce the interconnect delay problem, realize that high speed is interconnected.
Silicon chip TSV has its unique distinction: 1) the silicon chip through-hole aperture is much smaller than the printed circuit board through-hole aperture; 2) depth-to-width ratio of silicon chip through hole is much larger than the depth-to-width ratio of printed circuit board through-hole; 3) density of silicon chip through hole is much larger than the density of printed circuit board through-hole.Based on above characteristics, the processing of silicon chip micro through-hole is different from traditional processing method of through holes, so its development of studying MEMS and semiconductor technology plays an important role.
The manufacture craft of tradition TSV is: the method etching deep hole on silicon chip or silicon keyset that 1) adopts deep erosion; 2) method through thermal oxidation or deposition forms SiO on the surface of silicon deep hole
2Or the SiN insulating barrier, be used for electric isolation; 3) deposit again on the surface of insulating barrier be used to adhere to the barrier metal diffusion the barrier layer, like TiN, Ti, Ta; 4) form the thin metal copper layer of one deck again on the surface on barrier layer, be used to electroplate the Seed Layer when filling out copper; 5) in deep hole, fill metal, be used for conduction and connect, general this metal is a metallic copper, and fill method is for electroplating; 6) to electroplating excessive metal grinding polishing, leveling; 7) the silicon chip thinning back side is exposed TSV to form through hole; 8) make metal redistribution layer and salient point.
But, because the technology that adopts much all is to be difficult to control, also there is influence in the rate of finished products of final product, even still there are problems in a lot of technology, wherein to make be a crucial difficult problem to the through hole copper seed layer of high-aspect-ratio.If the deposition Seed Layer covers rate variance in the bottom, hole, the cavity appears in the time of can causing electro-coppering, and form not through hole or had a strong impact on reliability.The Seed Layer of the step coverage that employing PECVD method is difficult to form, ALD also exists deposition velocity to be difficult for the shortcoming of industrialization extremely slowly.Have Alchimer company to research and develop a kind of brand-new eG method in addition and form the measured Seed Layer of matter, mainly accomplish processing procedure through electrochemical method, principle is complicated.Conventional method all is to adopt to electroplate to fill out copper aspect the copper and filling out; But owing to need in deep hole, fill out copper; On the one hand Seed Layer there is very high requirement; Also controls such as electroplating solution and electric current there is extremely strict requirement on the other hand, and on same block of plate, simultaneously big aperture filling is difficult to form simultaneously the bubble-free copper core of no hole.In addition, for wide-aperture through hole, electroplating time is very long, and cost is high, and efficient is low.
Because this traditional method is complicated, there are a lot of difficulties, the rate of finished products and the reliability of product caused great influence.Various new technologies; Material and fill method also progressively are suggested and discuss; For example adopt tungsten, conducting resinl is filled the TSV hole, adopts the method for chemical plating or electrochemistry plating to form Seed Layer and fill metal; Be exactly the employing relevant with the present invention in addition and directly in the hole, fill the method for fine material of metal or metal ball and accomplish and fill a vacancy, this method can have good application under wide-aperture situation.US6589594B1 mentions like patent, adopts deposition of solder or other conductor materials to get into the silicon through hole, and the back of refluxing forms interconnection; And US 2006/0009029A1 also mentions, and in the silicon hole, inserts conductor ball, exerts pressure to form interconnection; US2010/0144137A1 utilizes capillarity, and the interconnection up-down structure is accomplished filling perforation simultaneously.But these methods are all in complex process, and preparation time is grown and the high shortcoming of cost of manufacture.
Summary of the invention
The technical problem that (one) will solve
In view of this, main purpose of the present invention is to provide a kind of utilization to plant ball indentation and brushes keyset structure that realizes silicon through hole or the filling of glass through hole and preparation method thereof, to adopt the interconnection structure of TSV technology in effective completion three-dimension packaging or the MEMS encapsulation.
(2) technical scheme
For achieving the above object, the technical scheme that the present invention adopts is following:
A kind of keyset structure comprises: perpendicular to the through hole on this keyset surface; Be covered at least one layer insulating and the layer of metal layer of the sidewall of this through hole; Be embedded in metal ball or metal segment in this through hole; Be covered in the solder on this through hole vertical direction one side metal ball or metal segment surface, and this solder exceeds the keyset surface; And be formed between this keyset interior metal segment surface and the solder and the intermetallic compound between solder and the keyset side-wall metallic layer; Wherein, the metal flat of said this keyset through hole vertical direction opposite side and this keyset plane be at same horizontal plane, and be connected with outside with salient point through rewiring.
A kind of method for preparing the keyset structure comprises: form blind hole at the silicon chip upper surface through etching; On the hole wall of this blind hole, make insulating barrier, or further make diffusion impervious layer and wetting layer on the surface of this blind hole; Directly implant in this blind hole through printing metal ball; Above metal ball, apply one deck scaling powder; Solder ball is placed on this metal ball; High temperature reflux, the wetting metal ball in solder fusing back is filled up the space between metal ball and the through hole, forms salient point simultaneously on the surface; With the silicon chip upset, make salient point one side and the interim bonding of support substrate; To silicon chip thinning back side part metals ball in exposing the silicon hole; Make redistribution layer and salient point; And this support substrate of dismantling obtains to have the silicon chip of filling hole with metal.
A kind of method for preparing the keyset structure comprises: form blind hole at the sheet glass upper surface through etching; On the hole wall of this blind hole, make diffusion impervious layer and wetting layer; Directly implant in this blind hole through printing metal ball; Above metal ball, apply one deck scaling powder; Solder ball is placed on this metal ball; High temperature reflux, the wetting metal ball in solder fusing back is filled up the space between metal ball and the through hole, forms salient point simultaneously on the surface; With the sheet glass upset, make salient point one side and the interim bonding of support substrate; To sheet glass thinning back side part metals ball in exposing the silicon hole; Make redistribution layer and salient point; And this support substrate of dismantling obtains to have the sheet glass of filling hole with metal.
(3) beneficial effect
The present invention and common plating are filled out copper method and other and are filled out copper method and compared following advantage:
At first, the present invention has broken away from traditional plating is filled out needs to make earlier Seed Layer in the copper difficulty, directly accomplishes filling step, makes practical implementation convenient.
The second, the method for employing stencil printing is with metal ball or fine pellet is filled and the method for bump making process, can avoid conventional method to fill out copper and have problems such as bubble cavity, and eliminate technologies such as grinding and polishing and the independent bump making process of needs.
The 3rd, the method cost of whole process using is low, is easy to control, is convenient to scale of mass production.
The 4th; This utilization provided by the invention is planted ball indentation and is brushed keyset structure that realizes silicon through hole or the filling of glass through hole and preparation method thereof; Adopt and solve the key technology of making TSV in the three-dimension packaging; Promptly directly plant ball and form metal copper ball and fine pellet, and the metal ball that the method that adopts printing to fill is used to conduct electricity inserts in the TSV hole, thereby accomplish disposable filling perforation.
Description of drawings
Fig. 1 a to Fig. 1 g accomplishes according to the present invention to plant ball indentation brush method filling silicon hole, thereby accomplishes the schematic flow sheet that TSV makes.Wherein:
101-is the wafer scale silicon slide glass of matrix with silicon, and perhaps keyset is the silica-based version of making TSV in the present invention;
102-is at the insulating barrier of the sidewall formation of TSV, surface-treated layers such as adhesion layer and wetting layer;
103-is in order to fill the copper ball of TSV;
104-is in order to the scaling powder of fine pellet and copper ball and pad combine well;
105-draws the fine pellet of TSV and bump making process in order to link to each other with copper ball;
The interim support chip of bonding during 106-silicon slide glass reverse side attenuate;
107-redistributes layer;
108-dielectric adhesion layer.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
In order effectively to accomplish the interconnection structure that adopts the TSV technology in three-dimension packaging or the MEMS encapsulation, this keyset structure provided by the invention comprises: perpendicular to the through hole on this keyset surface; Be covered at least one layer insulating and the layer of metal layer of the sidewall of this through hole; Be embedded in metal ball or metal segment in this through hole; Be covered in the solder on this through hole vertical direction one side metal ball or metal segment surface, and this solder exceeds the keyset surface; And be formed between this keyset interior metal segment surface and the solder and the intermetallic compound between solder and the keyset side-wall metallic layer; Wherein, the metal flat of said this keyset through hole vertical direction opposite side and this keyset plane be at same horizontal plane, and be connected with outside with salient point through rewiring.
Wherein, this keyset adopts silicon or glass to be made, and this through hole is vertical through hole or conical through-hole.When this keyset adopts silicon to make, the side wall deposition insulating barrier of this through hole, the material that this insulating barrier adopts comprises Si at least
YO
XOr Si
YN
XIn a kind of, X, Y are natural number.The material that the said metal level that is covered in the sidewall of this through hole adopts is one or more among Ni, Au, Ta, Ti, Pt, Pd or the TiN.The material that said metal segment adopts is Cu, W or Ni.The said solder that is covered in the segment surface adopts Sn, In or binary solder SnAg, SnCu, SnBi, SnIn or InAg, or ternary and polynary solder SnAgCu, SnBiIn, Sn-1.8Ag-0.05Ni, Sn-0.7Cu-0.01Ni-Ge, 98.5Sn1Ag0.5Cu0.05Mn or 98.5Sn1Ag0.5Cu0.02Ce.The material that re-wiring layer adopts during said rewiring is Cu or Al.Said intermetallic compound is one or more combination of compounds, and the composition of this intermetallic compound comprises one or more of side-wall metallic material, one or more in the solder composition, and metal ball material.
The present invention accomplishes the salient point preparation simultaneously through copper ball or solder ball printing process are carried out the quick filling perforation to large aperture TSV.The method that is different from other; The present invention directly fills a vacancy to the TSV blind hole, directly utilizes ball-establishing method that the copper ball that makes is inserted in the TSV hole, is planting solder ball above the copper ball again; Through refluxing blind hole is filled up; This method has been eliminated the technology that after filling out copper, needs grinding and polishing in the common process, has not also had common plating to fill out the step of copper deposition Seed Layer, can accomplish the salient point preparation simultaneously; And can expose metallic copper and solder material overleaf behind the attenuate, can further make again the preparation of wiring layer and salient point.The present invention finally realizes a kind of convenience and filling perforation method efficiently, is mainly used in the TSV, particularly taper TSV of aperture large-size.
Likewise, this method also is applicable to glass through hole (through glass interposer) preparation.Because glass is insulator, therefore saved the preparation on insulating barrier and barrier layer.Other technological processes and above-mentioned silicon through hole are filled in full accord.
Fig. 1 a to Fig. 1 g accomplishes according to the present invention to plant ball indentation brush method filling silicon hole, thereby accomplishes the schematic flow sheet that TSV makes.
Step 1, will be shown in silicon like Fig. 1 a is the wafer scale silicon slide glass of matrix, perhaps form tapered blind hole on the keyset 101 after, this silicon substrate thickness can be the 300-500 micron, the degree of depth of blind hole can be the 30-150 micron, diameter is the 50-150 micron.Form a layer insulating 102 at hole wall then, insulating barrier can be thermal oxidation or depositing operation forms, and can be silicon dioxide or silicon nitride.
Step 2, the wetting metal level of preparation on insulating barrier, like Ni/Au, Ti/Au.Wherein metal level such as Ni or Ti is used for strengthening the cohesive force with insulating barrier, Au, and Pt, Pd are wetting layer, increase solder wetting property.The method that forms the adhesive wetting layer can be sputter, vapor deposition, and multiple method for manufacturing thin film such as chemical meteorology deposition, principal security divides the formation wetting layer to get final product in side wall upper part.
Step 3 will be planted good copper ball 103 brushes through printing technology and gone in the blind hole, and the diameter of ball depends on the diameter of blind hole, and is also corresponding between the 50-150 micron, and make corresponding bushing according to silicon through hole domain before need using during the type metal ball.
Step 4, shown in Fig. 1 b, brush one deck scaling powder 104 above the copper ball 103 in the TSV hole.Change scaling powder and can be divided into solid, liquids and gases.Mainly play the auxiliary heat conduction, remove oxide, reduce being soldered material surface tension force, remove and be soldered the material surface greasy dirt, the function that increases bonding area and prevent several aspects such as reoxidizing.Its dosage depends primarily on the type of scaling powder, and the size in aperture and copper ball and the size that is connected fine pellet 106 etc.
Step 5 is shown in Fig. 1 c, above the copper ball in TSV hole; After treating that scaling powder has been brushed, adopt printing process that solder ball is planted on copper ball, the composition of solder ball can be monobasic or bianry alloys such as Sn, SnAg, SnCu; Alloy element comprises Ag; Cu, Ni, Fe, Co, Mn, RE etc., for example Sn-1.8Ag-0.05Ni; Sn-0.7Cu-0.01Ni-Ge; 98.5Sn1Ag0.5Cu0.05Mn; 98.5Sn1Ag0.5Cu0.02Ce etc.The size of this solder ball is filled up the TSV hole fully and is formed the salient point that is higher than silicon chip with volume and is as the criterion.
Step 6, shown in Fig. 1 d, behind high temperature reflux, solder is coated on the surface of copper ball fully, and fills up the TSV hole fully, and forms a solder bump on the surface of TSV.The temperature and time that refluxes depends on the fibre material composition of employing.
Step 7 shown in Fig. 1 e, is inverted the silicon slide glass, is linked through dielectric adhesion layer 108 and the interim support substrate 106 of one deck.Change supporting layer and can be glass or other resistant to elevated temperatures potteries or semiconductor print.
Step 8 is shown in Fig. 1 f, with the upper surface attenuate of silicon slide glass, until the exposed portions serve copper ball.The mode of attenuate is a cmp, and polished surface.
Step 9 shown in Fig. 1 g, is made redistribution layer and salient point through technology such as photoetching depositions on the silicon slide glass, remove interim support bonded layer 106 at last.
Will be in addition, the center of metal copper ball also can be made up of the polymer of other high temperature high voltage resistants etc., and perhaps other conduction good metal materials or semi-conducting material are formed, and are not limited to the just metal ball of fine copper.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (23)
1. a keyset structure is characterized in that, comprising:
Through hole perpendicular to this keyset surface;
Be covered at least one layer insulating and the layer of metal layer of the sidewall of this through hole;
Be embedded in metal ball or metal segment in this through hole;
Be covered in the solder on this through hole vertical direction one side metal ball or metal segment surface, and this solder exceeds the keyset surface; And
Be formed between this keyset interior metal segment surface and the solder and the intermetallic compound between solder and the keyset side-wall metallic layer;
Wherein, the metal flat of said this keyset through hole vertical direction opposite side and this keyset plane be at same horizontal plane, and be connected with outside with salient point through rewiring.
2. according to the said keyset structure of claim 1, it is characterized in that this keyset adopts silicon or glass to be made, this through hole is vertical through hole or conical through-hole.
3. according to the said keyset structure of claim 2, it is characterized in that, when this keyset adopts silicon to make, the side wall deposition insulating barrier of this through hole, the material that this insulating barrier adopts comprises Si at least
YO
XOr Si
YN
XIn a kind of, X, Y are natural number.
4. according to the said keyset structure of claim 1, it is characterized in that the material that the said metal level that is covered in the sidewall of this through hole adopts is one or more among Ni, Au, Ta, Ti, Pt, Pd or the TiN.
5. according to the said keyset structure of claim 1, it is characterized in that the material that said metal segment adopts is Cu, W or Ni.
6. according to the said keyset structure of claim 1; It is characterized in that; The said solder that is covered in the segment surface adopts Sn, In or binary solder SnAg, SnCu, SnBi, SnIn or InAg, or ternary and polynary solder SnAgCu, SnBiIn, Sn-1.8Ag-0.05Ni, Sn-0.7Cu-0.01Ni-Ge, 98.5Sn1Ag0.5Cu0.05Mn or 98.5Sn1Ag0.5Cu0.02Ce.
7. according to the said keyset structure of claim 1, it is characterized in that the material that re-wiring layer adopts during said rewiring is Cu or Al.
8. according to the said keyset structure of claim 1; It is characterized in that said intermetallic compound is one or more combination of compounds, the composition of this intermetallic compound comprises one or more of side-wall metallic material; In the solder composition one or more, and metal ball material.
9. a method for preparing the said keyset structure of claim 1 is characterized in that, comprising:
Form blind hole at the silicon chip upper surface through etching;
On the hole wall of this blind hole, make insulating barrier, or further make diffusion impervious layer and wetting layer on the surface of this blind hole;
Directly implant in this blind hole through printing metal ball;
Above metal ball, apply one deck scaling powder;
Solder ball is placed on this metal ball;
High temperature reflux, the wetting metal ball in solder fusing back is filled up the space between metal ball and the through hole, forms salient point simultaneously on the surface;
With the silicon chip upset, make salient point one side and the interim bonding of support substrate;
To silicon chip thinning back side part metals ball in exposing the silicon hole;
Make redistribution layer and salient point; And
This support substrate of dismantling obtains to have the silicon chip of filling hole with metal.
10. according to the said method for preparing the keyset structure of claim 9, it is characterized in that said blind hole is taper or rectangle.
11., it is characterized in that said metal ball diameter is close with said blind hole central diameter size according to the said method for preparing the keyset structure of claim 9.
12., it is characterized in that the material that said insulating barrier adopts comprises Si at least according to the said method for preparing the keyset structure of claim 9
YO
XOr Si
YN
XIn a kind of, X, Y are natural number.
13. according to the said method for preparing the keyset structure of claim 9; It is characterized in that; The material that the said diffusion impervious layer of making on the surface of this blind hole adopts is Ni, Ti, TiN or Ta, and the material that the said wetting layer of making on the surface of this blind hole adopts is Au, Pt or Pd.
14. according to the said method for preparing the keyset structure of claim 9, it is characterized in that, said with metal ball through the printing directly the implantation this blind hole in, accomplish through direct printing or stencil printing mode.
15. according to the said method for preparing the keyset structure of claim 9, it is characterized in that, in the said step that above metal ball, applies one deck scaling powder, scaling powder through stencil printing on metal ball.
16., it is characterized in that according to the said method for preparing the keyset structure of claim 9, said solder ball is placed the step on this metal ball, solder ball through stencil printing on metal ball.
17., it is characterized in that behind high temperature reflux, solder is coated on the surface of metal ball fully according to the said method for preparing the keyset structure of claim 9, and fill up the TSV hole fully, and form solder bump on the surface of TSV.
18., it is characterized in that said support substrate is glass, pottery or semiconductor chip according to the said method for preparing the keyset structure of claim 9, be bonded together through HTHP and special ephemeral key rubber alloy or light-sensitive emulsion and silicon chip front.
19., it is characterized in that according to the said method for preparing the keyset structure of claim 9, said the silicon chip thinning back side is adopted the method for cmp, be ground to the exposed portions serve metal ball and be as the criterion.
20., it is characterized in that said silicon chip is thinned to below 300 microns according to the said method for preparing the keyset structure of claim 19.
21., it is characterized in that said making redistribution layer and salient point adopt photoetching, deposition and electroplating technology according to the said method for preparing the keyset structure of claim 9.
22., it is characterized in that said this support substrate of dismantling adopts HTHP, particular chemical corrosive agent or illumination according to the said method for preparing the keyset structure of claim 9.
23. a method for preparing the said keyset structure of claim 1 is characterized in that, comprising:
Form blind hole at the sheet glass upper surface through etching;
On the hole wall of this blind hole, make diffusion impervious layer and wetting layer;
Directly implant in this blind hole through printing metal ball;
Above metal ball, apply one deck scaling powder;
Solder ball is placed on this metal ball;
High temperature reflux, the wetting metal ball in solder fusing back is filled up the space between metal ball and the through hole, forms salient point simultaneously on the surface;
With the sheet glass upset, make salient point one side and the interim bonding of support substrate;
To sheet glass thinning back side part metals ball in exposing the silicon hole;
Make redistribution layer and salient point; And
This support substrate of dismantling obtains to have the sheet glass of filling hole with metal.
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