CN105633050A - Multi-chip and multi-lap stack sandwich package structure and technique therefor - Google Patents
Multi-chip and multi-lap stack sandwich package structure and technique therefor Download PDFInfo
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- CN105633050A CN105633050A CN201510995805.9A CN201510995805A CN105633050A CN 105633050 A CN105633050 A CN 105633050A CN 201510995805 A CN201510995805 A CN 201510995805A CN 105633050 A CN105633050 A CN 105633050A
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
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Abstract
The invention relates to a multi-chip and multi-lap stack sandwich package structure and a technique therefor. The technique comprises the following steps: (1) providing a first lead frame; (2) coating the first lead frame with a solder paste; (3) embedding a first chip into the solder paste of the first lead frame; (4) providing a second lead frame and coating the second lead frame with the solder paste; (5) laminating the second lead frame on the first chip; (6) carrying out reflow soldering; (7) coating the second lead frame with the solder paste; (8) embedding a second chip into the second lead frame; (9) providing a third lead frame and coating the third lead frame with the solder paste; (10) laminating the third lead frame on the second chip; (11) carrying out reflow soldering; (12) carrying out plastic packaging by a molding compound; and (13) carrying out cutting or punching operation. The multi-chip and multi-lap stack sandwich package structure has the beneficial effects that the heat dissipation ability of a product is improved; the packaging resistance of the product is reduced; the whole product can be integrally molded; and the production efficiency is high.
Description
Technical field
The present invention relates to a kind of multi-chip and take stacking sandwich encapsulation structure and processing method thereof more, belong to technical field of semiconductor encapsulation.
Background technology
In recent years, along with power density is constantly pursued by electronic product, no matter be Diode(diode) or Transistor(triode) encapsulation, especially the MOS product in Transistor is just towards more high-power, smaller szie, more fast, better trend of dispelling the heat is in development. The also slowly even more disposable encapsulation technology spurt of the highly difficult low cost of the high-density of large regions and the challenge towards zonule by single encapsulation technology of the disposable manufacture of encapsulation.
Therefore, also the structure of the various electrical properties being encapsulated in parasitic resistance, electric capacity, inductance etc. of MOS product, encapsulation, the heat dissipation sexuality of encapsulation, the trust aspect of encapsulation and highly difficult disposable encapsulation technology aspect there is more requirement.
Traditional Diode(diode) and Transistor(triode) or the encapsulation of MOS product is general according to product performance, the difference of power and the Consideration of cost, the bonding wire mode of gold thread, silver alloy wire, copper cash, aluminum steel and aluminium band that make use of is as the main interconnection technique of chip and interior pin, thus realizes electrical connection. But the performance of product is present in restriction and the defect of the following aspects by the technical approach of bonding wire:
One, encapsulation and the restriction of manufacture view and defect:
1), Weldability (Bondability) aspect: the puzzlement that the first solder joint that usually can cause because of the change of the parameter sheet change of the change of Metal wire material, metal pins material and equipment and instrument, performance and precision and maintenance and correction management and the void of the 2nd solder joint bonding surface are welded, come off, breakpoint, neck crack, collapse line and short circuit etc. are all, result in and encapsulate that good rate cannot promote, cost cannot decline, the instability of reliability;
2), disposable high-density encapsulation technology aspect: traditional mutual contact mode is nearly all adopt single welding process that chips one chips repeats load, high temperature ultrasonic single line single line adopted by wire on matrix shaped metal lead frame. And in situation be like this load machine of specialty, ball bonding wire bonder, bonding aluminum steel/machinery equipment such as aluminium band machine or copper sheet overlapping machine palikinesia more at a high speed all cannot promote production efficiency, unit cost cannot be reduced, also because equipment constantly promotes the same unstable also improving manufacture of production rate.
Two, the restriction of the characteristic energy aspect of encapsulating products and defect:
1), heat dissipation aspect: traditional Diode(diode) and Transistor(triode) or the encapsulating products of MOS, general is all coated by plastic cement, outside only staying external pin to be exposed to plastic packaging body, owing to plastic cement itself is not the material of a kind of thermal conductance, so traditional Diode(diode) and Transistor(triode) or the heat that operationally produces of MOS product is difficult to dissipate by plastic cement the package of plastic cement material, fine wire can only be relied on to be interconnected at the dissipation that heat energy helped by metal pins material, but the dissipation capability of heat is very limited by the approach of this kind of heat dissipation, form the resistance of heat dissipation on the contrary,
2), resistivity (Resistivity) aspect: everybody knows that resistivity (resistivity) is used to represent the physical quantity of various material resistance characteristic. When temperature is certain, having formula R=�� l/s �� to be wherein exactly resistivity, l is the length of material, and s is area. It may be seen that the resistance sizes direct ratio of material is in the length of material, and it is inversely proportional to its area. By the definition of the known resistivity of upper formula: ��=Rs/l. Traditional Diode(diode) and Transistor(triode) or the encapsulating products of MOS, bonding wire is adopted to be formed interconnected, thus can clearly know the wire for performing power supply or signal can because, the length of conductor material and the change of sectional area and have influence on the size of resistivity and the loss of contact resistance, the product impact being especially applied in power aspect is obvious especially.
For solving the problem, industry is to traditional Diode(diode) and Transistor(triode) or the encapsulating products of MOS has improved, replace bonding wire with metal strip, metal clamping plate, reduce the ability that packaged resistance, inductance and expectation improve heat dissipation.
As shown in Figure 1, being the existing MOS stack package structure of one, in this structure, lead frame 11 comprises pipe core welding disc and pin, implants the first chip 12 on the pipe core welding disc of lead frame 11. The source electrode of the first chip 12 is electrically coupled to pin by the first metal clamping plate 14, and the grid of the first chip 12 is electrically coupled to pin by the first metal wire 16. Then the source electrode implanting the 2nd chip the 13, two chip 13 on the first metal clamping plate 14 is electrically coupled to pin by the 2nd metal clamping plate 15, and the grid of the 2nd chip 13 is electrically coupled to pin by the 2nd metal wire 17. Carry out encapsulating again, cut, the subsequent handling such as test. This MOS encapsulates structure metal clamping plate and instead of the bonding wire in conventional MOS encapsulation, reduce part packaged resistance, but still there is following defect: first, this MOS encapsulates the drain electrode of structure chips, source electrode and grid and is formed from lead frame and interconnected to be used different equipment respectively, processing procedure is complicated, and the acquisition cost of equipment is higher; Secondly, this MOS encapsulates structure when metal clamping plate and metal wire being coupled on chip and pin, can only carry out by a chips, cannot whole bar one-body molded, manufacture efficiency is lower.
Summary of the invention
More technical problem to be solved by this invention provides a kind of multi-chip to take stacking sandwich encapsulation structure and processing method thereof for above-mentioned prior art, whole bar product can be one-body molded, production efficiency height, technique is simple, can reduce costs, and there is good thermal diffusivity and lower packaged resistance and inductance.
The present invention's technical scheme adopted that solves the problem is: a kind of multi-chip takes stacking sandwich encapsulation structure more, it comprises the first lead frame, 2nd lead frame, 3rd lead frame, first chip and the 2nd chip, described 2nd lead frame and the 3rd lead frame are Z-shaped, described the 2nd Z-shaped lead frame comprises horizontal section on first, section and first time horizontal section is connected in the middle of first, described the 3rd Z-shaped lead frame comprises horizontal section on the 2nd, section and the 2nd time horizontal section is connected in the middle of 2nd, described first chip is folded on the first lead frame and first between horizontal section, the front and back of described first chip is electrically connected by horizontal section on tin cream and first and the first lead frame respectively, described 2nd chip be folded on first horizontal section and the 2nd between horizontal section, the front and back of described 2nd chip is electrically connected by horizontal section on horizontal section and first on tin cream and the 2nd respectively, described first lead frame, 2nd lead frame and the 3rd lead frame outer encapsulating have plastic cement, outside described first lead frame lower surface is exposed to plastic cement, described first time horizontal section lower surface and the 2nd time horizontal section lower surface are set up respectively on the first lead frame upper surface.
Described first lead frame, the 2nd lead frame and the 3rd lead frame are overall framework.
Multi-chip takes a processing method for stacking sandwich encapsulation structure more, and described method comprises the steps:
Step one, provide the first lead frame;
Step 2, the mode tin coating cream passing through screen printing in the first lead frame Ji Dao region;
The first chip implanted by the tin cream of step 3, the first lead frame Ji Dao region coating in step 2;
Step 4, offer the 2nd lead frame, described 2nd lead frame is Z-shaped, described the 2nd Z-shaped lead frame comprises and connects section and first time horizontal section in the middle of horizontal section on first, first, and on the first of the 2nd lead frame, horizontal section lower surface and first time horizontal section lower surface are by the mode tin coating cream of screen printing;
Step 5, horizontal section on the first of the 2nd lead frame is pressed together on the first chip of the first lead frame upper surface, and the 2nd first time horizontal section lower surface of lead frame set up on the first lead frame upper surface, after pressing, the first lead frame and the 2nd lead frame form overall framework;
Step 6, by step 5 formed overall framework upper and lower surface pressing plate push down, carry out Reflow Soldering;
Step 7, complete Reflow Soldering after, on the first of the 2nd lead frame, the upper surface of horizontal section is by the mode tin coating cream of screen printing;
Step 8, in step 7 the 2nd lead frame first on horizontal section upper surface coating tin cream on implant the 2nd chip;
Step 9, offer the 3rd lead frame, described 3rd lead frame is Z-shaped, described the 3rd Z-shaped lead frame comprises and connects section and the 2nd time horizontal section in the middle of horizontal section on the 2nd, the 2nd, and on the 2nd of the 3rd lead frame the, horizontal section lower surface and the 2nd time horizontal section lower surface are by the mode tin coating cream of screen printing;
Step 10, horizontal section on the 2nd of the 3rd lead frame the is pressed together on the 2nd chip of horizontal section upper surface on the first of the 2nd lead frame, and the 3rd the 2nd time horizontal section lower surface of lead frame set up on the first lead frame upper surface, after pressing, the first lead frame, the 2nd lead frame and the 3rd lead frame form overall framework;
Step 11, by step 10 formed overall framework upper and lower surface pressing plate push down, carry out Reflow Soldering;
Step 12, the overall framework of step 11 after Reflow Soldering adopt plastic cement carry out plastic packaging;
Step 13, the work in-process that step 12 completes plastic packaging carry out cutting or die-cut operation, make originally array plastic packaging body, cutting or die-cut independent, and obtained multi-chip takes stacking sandwich encapsulation structure more.
Described first lead frame pressing the 2nd lead frame forms overall framework, it is possible to implement after the 2nd lead frame implants the 2nd chip.
The material of described first lead frame, the 2nd lead frame and the 3rd lead frame can be alloyed copper material, fine copper material, aluminium copper facing material, zinc copper facing material, Rhometal material, it is possible to thinks that other CTE scope is the conductive material of 8*10^-6/ DEG C ~ 25*10^-6/ DEG C.
Described first chip and the 2nd chip are two pole chips, three pole chips or the multipole chip that can be combined with metallic tin.
The thermal expansivity CTE of the thermal expansivity CTE of described pressing plate material and the first lead frame, the 2nd lead frame and the 3rd lead frame material is close, and its CTE scope is 8*10^-6/ DEG C ~ 25*10^-6/ DEG C.
Described step 2, step 4 and step 9 carry out by different platform simultaneously.
Compared with prior art, it is an advantage of the current invention that:
1, the 2nd lead frame and the 3rd lead frame that a kind of multi-chip of the present invention takes stacking sandwich encapsulation structure more directly with source electrode and the grid formation electric connection of MOS chip, instead of and conventional MOS Chip Packaging utilizes metal wire form interconnected technique, substantially reducing packaged resistance, the technology of the present invention can reduce more than at least 30% than the packaged resistance of conventional package design;
2, the 2nd lead frame and the 3rd lead frame that a kind of multi-chip of the present invention takes stacking sandwich encapsulation structure more is directly by the source electrode of tin cream and MOS chip and grid formation electric connection, reduce or remit the interconnected operation of metal wire completely, save the costs such as the equipment purchasing of the interconnected operation of metal wire, operation material completely. And the 2nd lead frame of the present invention and the 3rd lead frame be all whole article integrated, forming electric connection with chip is also that whole bar one step completes, compared with forming interconnected technique with conventional metals bonding wire, the interconnected chip one by one of tinsel, technique is comparatively simple, and production efficiency is significantly improved;
3, a kind of multi-chip of the present invention is taken stacking sandwich encapsulation structure more and is all directly contacted with lead frame due to upper and lower two surfaces of chip, the heat produced during chip operation falls apart by lead frame, and outside the first lead frame lower surface of the present invention is directly exposed to plastic cement, the multi-chip of the present invention is taken stacking sandwich encapsulation structure more and is had good heat dispersion; And the present invention can again according to product power, heat conduction or the difference of heat radiation additional scatterer on lead frame freely, in order to increase the ability of product heat dissipation further;
4, a kind of multi-chip of the present invention is taken stacking sandwich encapsulation structure more and is used upper press table to push down overall framework to carry out Reflow Soldering, framework is not easily heated the cohesion institute jack-up of process of cooling after melting by tin cream when Reflow Soldering, ensure the total height of skeleton construction, prevent movement or the rotation of chip, and can guarantee that framework exposes the coplanarity of outer pin.
Accompanying drawing explanation
Fig. 1 is a kind of known MOS stack package structure schematic diagram.
Fig. 2 is the side elevational view that a kind of multi-chip that the present invention manufactures takes stacking sandwich encapsulation structure more.
Fig. 3 is the vertical view that a kind of multi-chip that the present invention manufactures takes stacking sandwich encapsulation structure more.
Fig. 4 is the three-dimensional view of the first lead frame in the present invention.
Fig. 5 is the three-dimensional view of the 2nd lead frame in the present invention.
Fig. 6 is the three-dimensional view of the 3rd lead frame in the present invention.
Fig. 7 (a) to Fig. 7 (m) for a kind of multi-chip of the present invention take more stacking sandwich encapsulation structural manufacturing process method schema.
Wherein:
Lead frame 11
First chip 12
2nd chip 13
First metal clamping plate 14
2nd metal clamping plate 15
First metal wire 16
2nd metal wire 17
First lead frame 21
2nd lead frame 22
Horizontal section 221 on first
Section 222 is connected in the middle of first
First time horizontal section 223
3rd lead frame 23
Horizontal section 231 on 2nd
Section 232 is connected in the middle of 2nd
2nd time horizontal section 233
First chip 24
2nd chip 25
Tin cream 26
Plastic cement 27.
Embodiment
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
As shown in Fig. 7 (a) ~ Fig. 7 (m), a kind of multi-chip in the present embodiment takes the processing method of stacking sandwich encapsulation structure more, and its concrete processing step is as follows:
Step one, see Fig. 7 (a), it is provided that the first lead frame, the material of the first lead frame is alloy copper material, fine copper material, aluminium copper facing material, zinc copper facing material, Rhometal material, it is possible to think that other CTE scope is the conductive material of 8*10^-6/ DEG C ~ 25*10^-6/ DEG C;
Step 2, see Fig. 7 (b), in the first lead frame Ji Dao region by the mode tin coating cream of screen printing, object engages for realizing follow-up first implanted chip Hou Yuji island, can control the thickness of tin cream, area and position accurately by adjusting the area of the thickness of web plate and opening;
Step 3, see Fig. 7 (c), in step 2 first lead frame Ji Dao region coating tin cream on implant the first chip;
Step 4, see Fig. 7 (d), 2nd lead frame is provided, described 2nd lead frame is Z-shaped, described the 2nd Z-shaped lead frame comprises and connects section and first time horizontal section in the middle of horizontal section on first, first, the material of the 2nd lead frame is alloy copper material, fine copper material, aluminium copper facing material, zinc copper facing material, Rhometal material, it is possible to think that other CTE scope is the conductive material of 8*10^-6/ DEG C ~ 25*10^-6/ DEG C. On the first of the 2nd lead frame, horizontal section lower surface and first time horizontal section lower surface are by the mode tin coating cream of screen printing, can control the thickness of tin cream, area and position accurately by the area of the thickness and opening that adjust web plate;
Step 5, see Fig. 7 (e), horizontal section on the first of 2nd lead frame is pressed together on the first chip of the first lead frame upper surface, first chip and the 2nd lead frame are formed by the tin cream of horizontal section lower surface on first be electrically connected, and the 2nd first time horizontal section lower surface of lead frame set up on the first lead frame upper surface, after pressing, the first lead frame and the 2nd lead frame form overall framework;
Step 6, participation Fig. 7 (f), push down the overall framework upper and lower surface pressing plate that step 5 is formed, carry out Reflow Soldering. The material of pressing plate requires deformation to be less likely to occur and has good heat-conductive characteristic, and the thermal expansivity CTE of its thermal expansivity CTE and the first lead frame and the 2nd lead frame material is close, and its CTE scope is 8*10^-6/ DEG C ~ 25*10^-6/ DEG C;
Step 7, participation Fig. 7 (g), after completing Reflow Soldering, on the first of the 2nd lead frame, the upper surface of horizontal section is by the mode tin coating cream of screen printing;
Step 8, see Fig. 7 (h), in step 7, the 2nd chip implanted by the tin cream of horizontal section upper surface coating on the first of the 2nd lead frame;
Step 9, see Fig. 7 (i), 3rd lead frame is provided, described 3rd lead frame is Z-shaped, described the 3rd Z-shaped lead frame comprises and connects section and the 2nd time horizontal section in the middle of horizontal section on the 2nd, the 2nd, the material of the 3rd lead frame is alloy copper material, fine copper material, aluminium copper facing material, zinc copper facing material, Rhometal material, it is possible to think that other CTE scope is the conductive material of 8*10^-6/ DEG C ~ 25*10^-6/ DEG C. On the 2nd of the 3rd lead frame the, horizontal section lower surface and the 2nd time horizontal section lower surface are by the mode tin coating cream of screen printing, object is for realizing on follow-up 3rd lead frame the 2nd between horizontal section and the 2nd chip front side and the 3rd lead frame is formed between horizontal section and the first lead frame upper surface for the 2nd time and is electrically connected, and can control the thickness of tin cream, area and position accurately by the area of the thickness and opening that adjust web plate;
Step 10, see Fig. 7 (j), horizontal section on the 2nd of 3rd lead frame is pressed together on the 2nd chip of horizontal section upper surface on the first of the 2nd lead frame, 2nd chip and the 3rd lead frame are formed by the tin cream of horizontal section lower surface on the 2nd be electrically connected, and the 3rd the 2nd time horizontal section lower surface of lead frame set up on the first lead frame upper surface, after pressing, the first lead frame, the 2nd lead frame and the 3rd lead frame form overall framework;
Step 11, see Fig. 7 (k), by step 10 formed overall framework upper and lower surface pressing plate push down, carry out Reflow Soldering. The material of pressing plate requires deformation to be less likely to occur and has good heat-conductive characteristic, the thermal expansivity CTE of its thermal expansivity CTE and the first lead frame, the 2nd lead frame and the 3rd lead frame material is close, and its CTE scope is 8*10^-6/ DEG C ~ 25*10^-6/ DEG C;
Step 12, see Fig. 7 (l), plastic cement is adopted to carry out plastic packaging the overall framework of step 11 after Reflow Soldering;
Step 13, see Fig. 7 (m), the work in-process that step 12 completes plastic packaging carry out cutting or die-cut operation, make array plastic packaging body originally, cutting or die-cut independent, and obtained multi-chip takes stacking sandwich encapsulation structure more.
In above-mentioned steps, step 5 and step 6 first lead frame pressing the 2nd lead frame form overall framework and use pressing plate to carry out Reflow Soldering, it is possible to implement after step 8 the 2nd lead frame implants the 2nd chip.
In above-mentioned steps, step 2, step 4 and step 9 carry out by different platform simultaneously.
See Fig. 2 ~ Fig. 6, a kind of multi-chip of the present invention takes stacking sandwich encapsulation structure more, it comprises the first lead frame 21, 2nd lead frame 22, 3rd lead frame 23, first chip 24 and the 2nd chip 25, described 2nd lead frame 22 and the 3rd lead frame 23 are in Z-shaped, described the 2nd Z-shaped lead frame 22 comprises horizontal section 221 on first, section 222 and first time horizontal section 223 is connected in the middle of first, described the 3rd Z-shaped lead frame 23 comprises horizontal section 231 on the 2nd, section 232 and the 2nd time horizontal section 233 is connected in the middle of 2nd, described first chip 24 is folded on the first lead frame 21 and first between horizontal section 221, the front and back of described first chip 24 is electrically connected by horizontal section 221 and the first lead frame 21 on tin cream 26 and first respectively, described 2nd chip 25 be folded on first horizontal section 221 and the 2nd between horizontal section 231, the front and back of described 2nd chip 25 is electrically connected by horizontal section 221 on horizontal section on tin cream 26 and the 2nd 231 and first respectively, described first lead frame 21, 2nd lead frame 22 and the 3rd lead frame 23 outer encapsulating have plastic cement 27, outside described first lead frame 21 lower surface is exposed to plastic cement 27, described first time horizontal section 223 lower surface and the 2nd time horizontal section 233 lower surface are set up respectively on the first lead frame 21 upper surface.
Described first lead frame 21, the 2nd lead frame 22 and the 3rd lead frame 23 are overall framework, its material can be alloyed copper material, fine copper material, aluminium copper facing material, zinc copper facing material, Rhometal material, it is possible to thinks that other CTE scope is the conductive material of 8*10^-6/ DEG C ~ 25*10^-6/ DEG C.
Described first chip 24 and the 2nd chip 25 are two pole chips, three pole chips or the multipole chip that can be combined with metallic tin.
In addition to the implementation, the present invention also includes other enforcement modes, the technical scheme that all employing equivalents or equivalence replacement mode are formed, and all should fall within the protection domain of the claims in the present invention.
Claims (8)
1. a multi-chip takes stacking sandwich encapsulation structure more, it is characterized in that: it comprises the first lead frame (21), 2nd lead frame (22), 3rd lead frame (23), first chip (24) and the 2nd chip (25), described 2nd lead frame (22) and the 3rd lead frame (23) are in Z-shaped, described the 2nd Z-shaped lead frame (22) comprises horizontal section on first (221), section (222) and first time horizontal section (223) is connected in the middle of first, described the 3rd Z-shaped lead frame (23) comprises horizontal section (231) on the 2nd, section (232) and the 2nd time horizontal section (233) is connected in the middle of 2nd, described first chip (24) is folded on the first lead frame (21) and first between horizontal section (221), the front and back of described first chip (24) is electrically connected by horizontal section (221) on tin cream (26) and first and the first lead frame (21) respectively, described 2nd chip (25) be folded on first horizontal section (221) and the 2nd between horizontal section (231), the front and back of described 2nd chip (25) is electrically connected by horizontal section (221) on horizontal section (231) and first on tin cream (26) and the 2nd respectively, described first lead frame (21), 2nd lead frame (22) and the 3rd lead frame (23) outer encapsulating have plastic cement (27), outside described first lead frame (21) lower surface is exposed to plastic cement (27), described first time horizontal section (223) lower surface and the 2nd time horizontal section (233) lower surface are set up respectively on the first lead frame (21) upper surface.
2. a kind of multi-chip according to claim 1 takes stacking sandwich encapsulation structure more, it is characterised in that: described first lead frame (21), the 2nd lead frame (22) and the 3rd lead frame (23) are overall framework.
3. a multi-chip takes the processing method that stacking sandwich encapsulates structure more, it is characterised in that described method comprises the steps:
Step one, provide the first lead frame;
Step 2, the mode tin coating cream passing through screen printing in the first lead frame Ji Dao region;
The first chip implanted by the tin cream of step 3, the first lead frame Ji Dao region coating in step 2;
Step 4, offer the 2nd lead frame, described 2nd lead frame is Z-shaped, described the 2nd Z-shaped lead frame comprises and connects section and first time horizontal section in the middle of horizontal section on first, first, and on the first of the 2nd lead frame, horizontal section lower surface and first time horizontal section lower surface are by the mode tin coating cream of screen printing;
Step 5, horizontal section on the first of the 2nd lead frame is pressed together on the first chip of the first lead frame upper surface, and the 2nd first time horizontal section lower surface of lead frame set up on the first lead frame upper surface, after pressing, the first lead frame and the 2nd lead frame form overall framework;
Step 6, by step 5 formed overall framework upper and lower surface pressing plate push down, carry out Reflow Soldering;
Step 7, complete Reflow Soldering after, on the first of the 2nd lead frame, the upper surface of horizontal section is by the mode tin coating cream of screen printing;
Step 8, in step 7 the 2nd lead frame first on horizontal section upper surface coating tin cream on implant the 2nd chip;
Step 9, offer the 3rd lead frame, described 3rd lead frame is Z-shaped, described the 3rd Z-shaped lead frame comprises and connects section and the 2nd time horizontal section in the middle of horizontal section on the 2nd, the 2nd, and on the 2nd of the 3rd lead frame the, horizontal section lower surface and the 2nd time horizontal section lower surface are by the mode tin coating cream of screen printing;
Step 10, horizontal section on the 2nd of the 3rd lead frame the is pressed together on the 2nd chip of horizontal section upper surface on the first of the 2nd lead frame, and the 3rd the 2nd time horizontal section lower surface of lead frame set up on the first lead frame upper surface, after pressing, the first lead frame, the 2nd lead frame and the 3rd lead frame form overall framework;
Step 11, by step 10 formed overall framework upper and lower surface pressing plate push down, carry out Reflow Soldering;
Step 12, the overall framework of step 11 after Reflow Soldering adopt plastic cement carry out plastic packaging;
Step 13, the work in-process that step 12 completes plastic packaging carry out cutting or die-cut operation, make originally array plastic packaging body, cutting or die-cut independent, and obtained multi-chip takes stacking sandwich encapsulation structure more.
4. a kind of multi-chip according to claim 3 takes the processing method of stacking sandwich encapsulation structure more, it is characterized in that: the material of described first lead frame, the 2nd lead frame and the 3rd lead frame can be alloyed copper material, fine copper material, aluminium copper facing material, zinc copper facing material, Rhometal material, it is possible to thinks that other CTE scope is the conductive material of 8*10^-6/ DEG C ~ 25*10^-6/ DEG C.
5. a kind of multi-chip according to claim 3 takes the processing method of stacking sandwich encapsulation structure more, it is characterised in that: described first chip and the 2nd chip are two pole chips, three pole chips or the multipole chip that can be combined with metallic tin.
6. a kind of multi-chip according to claim 3 takes the processing method of stacking sandwich encapsulation structure more, it is characterized in that: the thermal expansivity CTE of the thermal expansivity CTE of described pressing plate material and the first lead frame, the 2nd lead frame and the 3rd lead frame material is close, and its CTE scope is 8*10^-6/ DEG C ~ 25*10^-6/ DEG C.
7. a kind of multi-chip according to claim 3 takes the processing method of stacking sandwich encapsulation structure more, it is characterised in that: described step 2, step 4 and step 9 carry out by different platform simultaneously.
8. a kind of multi-chip according to claim 3 takes the processing method of stacking sandwich encapsulation structure more, it is characterized in that: step 5 and step 6 first lead frame pressing the 2nd lead frame form overall framework and use pressing plate to carry out Reflow Soldering, it is possible to implement after step 8 the 2nd lead frame implants the 2nd chip.
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Cited By (1)
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| WO2018215139A1 (en) * | 2017-05-23 | 2018-11-29 | Robert Bosch Gmbh | Method and apparatus for producing a printed circuit board sandwich and printed circuit board sandwich |
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