CN105609424A - Sandwich packaging technique with exposed frame - Google Patents
Sandwich packaging technique with exposed frame Download PDFInfo
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- CN105609424A CN105609424A CN201510988981.XA CN201510988981A CN105609424A CN 105609424 A CN105609424 A CN 105609424A CN 201510988981 A CN201510988981 A CN 201510988981A CN 105609424 A CN105609424 A CN 105609424A
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- Prior art keywords
- lead frame
- chip
- frame
- horizontal segment
- exposes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
- H01L2224/2732—Screen printing, i.e. using a stencil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention relates to a sandwich packaging technique with an exposed frame. The technique comprises the following steps: (1) providing a first lead frame; (2) coating a base island area of the first lead frame with a solder paste; (3) implanting a chip into the first lead frame; (4) providing a second lead frame; (5) coating the second lead frame with the solder paste; (6) laminating the second lead frame on the chip on the upper surface of the first lead frame to form an overall frame; (7) pressing the upper surface and the lower surface of the overall frame formed in the step (6) by pressure plates and carrying out reflow soldering; (8) carrying out plastic packaging by a molding compound, and exposing the upper surface of an upper horizontal section of the second mead frame outside the molding compound after plastic packaging; and (9) carrying out cutting or punching. The sandwich packaging technique with the exposed frame has the beneficial effect that the thickness, the area and the position of the solder paste can be easily controlled.
Description
Technical field
The present invention relates to the sandwich packaging process that a kind of framework exposes, belong to semiconductor packaging field.
Background technology
In recent years, along with electronic product is constantly pursued power density, no matter be Diode(diode) or Transistor(triode) encapsulation, especially Transistor in MOS product just towards more high-power, smaller szie, more fast, the better trend of dispelling the heat is in development. There has been more requirement various electrical properties to resistance parasitic in encapsulating structure, electric capacity, inductance etc., the dissipation of heat sexuality of encapsulating structure, the reliability aspect of encapsulation. The also slowly disposable encapsulation technology spurt of the highly difficult low cost of the high density in even larger region and challenge towards zonule by single encapsulation technology of the disposable manufacture of encapsulation.
Traditional Diode(diode) and Transistor(triode) or the encapsulation of MOS product generally according to the difference of product performance, power and the Consideration of cost, utilize the bonding wire mode of gold thread, silver alloy wire, copper cash, aluminum steel and aluminium strip as the main interconnection technique of chip and interior pin, thereby realized electrical connection. But there is restriction and the defect of the following aspects in the technical approach of bonding wire to the performance of product:
1, product is to be all generally coated, only to be stayed external pin to be exposed to outside plastic-sealed body by plastic packaging material, because plastic packaging material itself is not a kind of material of thermal conductance, so traditional Diode(diode) and Transistor(triode) or the heat that produces in when work of MOS product is difficult to by the plastic packaging material packaging body that dissipates, can only rely on fine wire to be interconnected at metal pins material to help the dissipation of heat energy, but the approach of this dissipation of heat is very limited to hot dissipation capability, forms on the contrary the resistance of the dissipation of heat;
2, owing to adopting bonding wire to form interconnected, can clearly know thus for carrying out power supply or the wire of signal and can have influence on the size of resistivity and the loss of contact resistance because of the length of conductor material and the variation of sectional area, the product impact that is especially applied in power aspect is obvious especially.
For addressing the above problem, industry is to traditional Diode(diode) encapsulating products improve, replace bonding wire with metal framework, reduce packaged resistance, inductance and expectation and improve the ability of the dissipation of heat.
The preparation method of known a kind of rectification diode encapsulation has utilized metal framework to replace bonding wire exactly, its rectification diode encapsulating structure comprises lead frame, lower lead frame and rectification diode chip, described upper lead frame and lower lead frame are equipped with salient point He Ji island, described rectification diode chip attach is between upper lead frame and lower lead frame, and its preparation method comprises following operation successively: use point gum machine to put and coat tin cream respectively on the salient point He Ji island of lower lead frame; Use die bond machine that anodal rectification diode chip upwards in rectification diode chip is placed on to lower lead frame Ji Dao upper, negative pole rectification diode chip is upwards placed on lower lead frame salient point; While die bond under two kinds of rectification diode chip normal temperature; Utilize point gum machine to coat tin cream on admittedly good brilliant rectification chip; Upper lead frame is aimed to lower lead frame and place, the overall lead frame being up and down combined is put into soldering furnace welding; Finally take out the rear as a whole upper and lower lead frame with rectification diode chip of welding, pour into a mould rectifier bridge epoxy resin by moulding press, form the encapsulation of rectification diode.
Although this rectification diode encapsulating structure has reduced packaged resistance, has improved heat dissipating ability, but there is the defect such as free, the rotation of chip level and the short circuit of upper and lower tin cream of chip position. And chip is free, chip rotates and the reason of upper and lower tin cream short circuit has following situation to cause:
1, tin cream amount cannot effectively be grasped
The preparation method of this rectification diode encapsulation uses point gum machine to put and coat tin cream respectively at salient point and the platform of underframe, and the method for spot printing adopts injection tube shoot mode, the structural design of injection tube is that the large injection needle of bobbin is little, the slight pressure injection of bobbin piston in the time of injection, syringe needle is extruded how many very difficult controls of tin cream amount, especially tin cream, because the factors such as storage temperature, resting period, operating temperature are in the variation all causing tin cream viscosity, is difficult to control the extrusion capacity of tin cream especially. If tin cream amount too much can make the tin cream of underframe upper surface and the tin cream of upper frame lower surface form bridging and cause short circuit (referring to Fig. 1 a);
2, chip and tin cream position cannot be grasped
This rectification diode is on the some coating preparation method of tin cream, be that the traditional point gum machine of use is respectively that single point is coated tin cream at salient point and the platform of lower lead frame, and shortcoming in the mode design maximum of this spot printing tin cream is exactly single spot printing, easily cause the position of every spot printing all different, even cause serious position cumulative limit. If the tin cream of spot printing is offset to some extent, because tin cream has very strong cohesive force, can the chip on tin cream be produced and be pullled, thereby cause chip to be subjected to displacement or rotate;
3, all metal pins coplanarities cannot be grasped
If in the uncontrollable situation of tin cream amount of each pin, in the time carrying out Reflow Soldering, in cooled and solidified process after the dissolving of being heated due to tin cream, tin cream can produce under stronger cohesive action, can be upper and lower lead frame difference both direction jack-up up and down, again because the difference of tin cream amount causes poly-shrink not of uniform size in tin cream, cause the outer pin of lower lead frame and the outer pin of upper lead frame not at grade, cause between metal pins and die surface and produced gap, caused the excessive quality problems of plastic packaging material (referring to Fig. 1 b);
4, the height of plastic-sealed body must be increased thickening
Because tin cream amount and positional precision cannot effectively be controlled, force on the contrary the apparent size of plastic-sealed body to widen and increase, cause the waste of cost and the pollution of environment.
If above-mentioned diode chip is changed into three utmost points or multi-electrode tube chip, due to three utmost points or multi-electrode tube chip has two or more adjacent electrodes on the same face, the error of the rotating lead frame contraposition of the slight movement of chip, chip, tend causes the short circuit between chip electrode. So above-mentioned technique is to three utmost points or the chip of multi-electrode tube is inapplicable.
Summary of the invention
Technical problem to be solved by this invention is the sandwich packaging process that provides a kind of framework to expose for above-mentioned prior art, in improving electrical property, having improved heat dissipating ability, can make easily thickness, area and the position of tin cream controlled.
The sandwich packaging process that provides a kind of framework to expose is provided, and chip is difficult for being moved or being offset, and is applicable to the sandwich encapsulation of secondary, three utmost points or multipole chip.
The sandwich packaging process that provides a kind of framework to expose is provided another object of the present invention, a kind of three utmost points that it produces or multipole chip sandwich encapsulating structure have lower packaged resistance and package inductance, its whole height can be effectively controlled, thereby guarantees the coplanarity of its external pin.
The present invention addresses the above problem adopted technical scheme: the sandwich packaging process that a kind of framework exposes, described method comprises the steps:
Step 1, provide the first lead frame;
Step 2, apply tin cream in the first lead frame Ji Dao region by the mode of screen printing;
Step 3, in step 2, the first lead frame applies on the region of tin cream and implants chip;
Step 4, provide the second lead frame, described the second lead frame is Z-shaped, and described the second Z-shaped lead frame comprises horizontal segment, middle linkage section and lower horizontal segment;
Step 5, on the second lead frame, the lower surface of horizontal segment applies tin cream by the mode of screen printing;
Step 6, the upper horizontal segment of the second lead frame is pressed together on the chip of the first lead frame upper surface, after pressing, the first lead frame and the second lead frame form general frame, and the first lead frame lower surface flushes with horizontal segment lower surface under the second lead frame;
Step 7, the general frame upper and lower surface that step 6 is formed are pushed down with pressing plate, carry out Reflow Soldering;
Step 8, general frame by step 7 after Reflow Soldering adopt plastic packaging material to carry out plastic packaging, and after plastic packaging, the upper surface of the upper horizontal segment of the second lead frame is exposed to outside plastic packaging material;
Step 9, the semi-finished product that step 8 is completed to plastic packaging cut or die-cut operation, make array plastic-sealed body originally, and cutting or die-cut independent, makes the sandwich encapsulating structure that framework exposes.
The material of described the first lead frame and the second lead frame can be alloyed copper material, fine copper material, aluminium copper facing material, zinc copper facing material, dilval material, can be also the conductive material of 8*10^-6/ DEG C ~ 25*10^-6/ DEG C for other CTE scope.
Described chip is two pole piece sheets, three pole piece sheets or the multipole chip that can be combined with metallic tin.
The thermal coefficient of expansion CTE of the thermal coefficient of expansion CTE of described pressing plate material and the first lead frame and the second lead frame material approaches, and its CTE scope is 8*10^-6/ DEG C ~ 25*10^-6/ DEG C.
Described step 5 and step 2 can be carried out simultaneously.
Compared with prior art, the invention has the advantages that:
1, the sandwich packaging process that a kind of framework of the present invention exposes, tin cream on its upper and lower framework all applies by screen printing, thickness, area and the position that can control accurately by adjusting the thickness of web plate and the area of opening tin cream, make process of the present invention applicable equally to ultra-thin chip;
2, the upper lower platen of sandwich packaging process use that a kind of framework of the present invention exposes is pushed down general frame and is carried out Reflow Soldering, make framework in the time of Reflow Soldering, be difficult for the cohesion institute jack-up of cooling procedure of being heated after melting by tin cream, ensure the total height of frame structure, prevent movement or the rotation of chip, and can guarantee that framework exposes the coplanarity of outer pin;
3, in the sandwich packaging process that a kind of framework of the present invention exposes, chip is difficult for being moved and rotating, two utmost points, three utmost points or multipole chip can complete sandwich encapsulation by technique of the present invention equally, make two utmost points, three utmost points or multipole chip-packaging structure have lower packaged resistance and good heat dissipating ability.
Brief description of the drawings
Fig. 1 (a) causes short circuit schematic diagram for the tin cream of underframe upper surface in conventional art and the tin cream of upper frame lower surface form bridging.
Fig. 1 (b) in conventional art because the outer pin of underframe and the outer pin of upper frame do not cause the excessive schematic diagram of plastic packaging material at grade.
Fig. 2 is the side view of the sandwich encapsulating structure that exposes of a kind of framework that the present invention manufactures.
Fig. 3 is the top view of the sandwich encapsulating structure that exposes of a kind of framework that the present invention manufactures.
Fig. 4 is the three-dimensional view that the present invention has completed the first lead frame of load.
Fig. 5 is the three-dimensional view of the second lead frame in the present invention.
Fig. 6 is the schematic perspective view of the first lead frame in the present invention, chip and the second lead frame combination.
Fig. 7 is the solid assembling perspective diagram of the sandwich encapsulating structure that exposes of a kind of framework that the present invention manufactures.
The flow chart of the sandwich packaging process that Fig. 8 (a) (i) exposes for a kind of framework of the present invention to Fig. 8.
Wherein:
Lower lead frame 11
Upper lead frame 12
Diode chip for backlight unit 13
Tin cream 14
The first lead frame 21
The second lead frame 22
Upper horizontal segment 221
Middle linkage section 222
Lower horizontal segment 223
Chip 23
Tin cream 24
Plastic packaging material 25.
Detailed description of the invention
Below in conjunction with accompanying drawing, embodiment is described in further detail the present invention.
As Fig. 8 (a) ~ Fig. 8 (i) as shown in, the sandwich packaging process that a kind of framework in the present embodiment exposes, its concrete technology step is as follows:
Step 1, referring to Fig. 8 (a), the first lead frame is provided, the material of the first lead frame is alloy copper material, fine copper material, aluminium copper facing material, zinc copper facing material, dilval material, can be also the conductive material of 8*10^-6/ DEG C ~ 25*10^-6/ DEG C for other CTE scope;
Step 2, referring to Fig. 8 (b), apply tin cream in the first region, lead frame Ji island by the mode of screen printing, object is to engage for realizing follow-up implanted chip Hou Yuji island, can control accurately thickness, area and the position of tin cream by adjusting the thickness of web plate and the area of opening;
Step 3, referring to Fig. 8 (c), in step 2, the first lead frame applies on the region of tin cream and implants chip;
Step 4, referring to Fig. 8 (d), the second lead frame is provided, described the second lead frame is Z-shaped, described the second Z-shaped lead frame comprises horizontal segment, middle linkage section and lower horizontal segment, the material of the second lead frame is alloy copper material, fine copper material, aluminium copper facing material, zinc copper facing material, dilval material, can be also the conductive material of 8*10^-6/ DEG C ~ 25*10^-6/ DEG C for other CTE scope;
Step 5, referring to Fig. 8 (e), on the second lead frame, the lower surface of horizontal segment applies tin cream by the mode of screen printing, object is that pin and the chip front side for realizing follow-up the second lead frame forms electric connection, can control accurately thickness, area and the position of tin cream by adjusting the thickness of web plate and the area of opening;
Step 6, referring to Fig. 8 (f), the upper horizontal segment of the second lead frame is pressed together on the chip of the first lead frame upper surface, chip and the second lead frame are formed and are electrically connected by the tin cream of upper horizontal segment lower surface, after pressing, the first lead frame and the second lead frame form general frame, and the first lead frame lower surface flushes with horizontal segment lower surface under the second lead frame;
Step 7, referring to Fig. 8 (g), by step 6 form general frame upper and lower surface push down with pressing plate, carry out Reflow Soldering. The material of pressing plate requires to be not easy that deformation occurs and to have good heat-conductive characteristic, and the thermal coefficient of expansion CTE of its thermal coefficient of expansion CTE and the first lead frame and the second lead frame material approaches, and its CTE scope is 8*10^-6/ DEG C ~ 25*10^-6/ DEG C;
Step 8, referring to Fig. 8 (h), general frame by step 7 after Reflow Soldering adopts plastic packaging material to carry out plastic packaging, after plastic packaging, the upper surface of the upper horizontal segment of the second lead frame is exposed to outside plastic packaging material;
Step 9, referring to Fig. 8 (i), the semi-finished product that step 8 completed to plastic packaging cut or die-cut operation, make array plastic-sealed body originally, and cutting or die-cut independent, makes the sandwich encapsulating structure that framework exposes.
In above-mentioned steps, step 5 and step 2 can be carried out by different platform simultaneously.
Referring to Fig. 2 ~ Fig. 7, the encapsulating structure that the sandwich packaging process that a kind of framework of the present invention exposes is manufactured, it comprises the first lead frame 21, the second lead frame 22 and chip 23, described the second lead frame 22 is Z-shaped, described the second Z-shaped lead frame 22 comprises horizontal segment 221, middle linkage section 222 and lower horizontal segment 223, described chip 23 is folded between the first lead frame 21 and upper horizontal segment 221, the front and back surface of described chip 23 is electrically connected by tin cream 24 and upper horizontal segment 221 and the first lead frame 21 respectively, described the first lead frame 21 and the second lead frame 22 outer encapsulatings have plastic packaging material 25, described the first lead frame 21 lower surfaces flush with lower horizontal segment 223 lower surfaces, described the first lead frame 21 is all exposed to outside plastic packaging material with the lower surface of lower horizontal segment 223 and the upper surface of upper horizontal segment 221.
Described the first lead frame 21 and the second lead frame 22 are general frame, and its material can be alloyed copper material, fine copper material, aluminium copper facing material, zinc copper facing material, dilval material, can be also the conductive material of 8*10^-6/ DEG C ~ 25*10^-6/ DEG C for other CTE scope.
Described chip 23 is two pole piece sheets, three pole piece sheets or the multipole chip that can be combined with metallic tin.
In addition to the implementation, the present invention also includes other embodiments, and the technical scheme that all employing equivalents or equivalent substitute mode form, within all should falling into the protection domain of the claims in the present invention.
Claims (5)
1. the sandwich packaging process that framework exposes, is characterized in that described method comprises the steps: step 1, the first lead frame is provided;
Step 2, apply tin cream in the first lead frame Ji Dao region by the mode of screen printing;
Step 3, in step 2, the first lead frame applies on the region of tin cream and implants chip;
Step 4, provide the second lead frame, described the second lead frame is Z-shaped, and described the second Z-shaped lead frame comprises horizontal segment, middle linkage section and lower horizontal segment;
Step 5, on the second lead frame, the lower surface of horizontal segment applies tin cream by the mode of screen printing;
Step 6, the upper horizontal segment of the second lead frame is pressed together on the chip of the first lead frame upper surface, after pressing, the first lead frame and the second lead frame form general frame, and the first lead frame lower surface flushes with horizontal segment lower surface under the second lead frame;
Step 7, the general frame upper and lower surface that step 6 is formed are pushed down with pressing plate, carry out Reflow Soldering;
Step 8, general frame by step 7 after Reflow Soldering adopt plastic packaging material to carry out plastic packaging, and after plastic packaging, the upper surface of the upper horizontal segment of the second lead frame is exposed to outside plastic packaging material;
Step 9, the semi-finished product that step 8 is completed to plastic packaging cut or die-cut operation, make array plastic-sealed body originally, and cutting or die-cut independent, makes the sandwich encapsulating structure that framework exposes.
2. the sandwich packaging process that a kind of framework according to claim 1 exposes, it is characterized in that: the material of described the first lead frame and the second lead frame can be alloyed copper material, fine copper material, aluminium copper facing material, zinc copper facing material, dilval material, can be also the conductive material of 8*10^-6/ DEG C ~ 25*10^-6/ DEG C for other CTE scope.
3. the sandwich packaging process that a kind of framework according to claim 1 exposes, is characterized in that: described chip is two pole piece sheets, three pole piece sheets or the multipole chip that can be combined with metallic tin.
4. the sandwich packaging process that a kind of framework according to claim 1 exposes, it is characterized in that: the thermal coefficient of expansion CTE of the thermal coefficient of expansion CTE of described pressing plate material and the first lead frame, the second lead frame and the 3rd lead frame material approaches, and its CTE scope is 8*10^-6/ DEG C ~ 25*10^-6/ DEG C.
5. the sandwich packaging process that a kind of framework according to claim 1 exposes, is characterized in that: described step 5 and step 2 can be carried out simultaneously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510988981.XA CN105609424A (en) | 2015-12-24 | 2015-12-24 | Sandwich packaging technique with exposed frame |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510988981.XA CN105609424A (en) | 2015-12-24 | 2015-12-24 | Sandwich packaging technique with exposed frame |
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| CN105609424A true CN105609424A (en) | 2016-05-25 |
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| CN201510988981.XA Pending CN105609424A (en) | 2015-12-24 | 2015-12-24 | Sandwich packaging technique with exposed frame |
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Cited By (4)
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| CN111211096A (en) * | 2020-01-10 | 2020-05-29 | 珠海格力电器股份有限公司 | Chip module packaging structure and packaging method |
| CN111403366A (en) * | 2020-03-19 | 2020-07-10 | 常州星海电子股份有限公司 | Transient diode and packaging process thereof |
| CN113257683A (en) * | 2021-04-14 | 2021-08-13 | 深圳基本半导体有限公司 | Bonding method of silicon carbide power device chip and lead frame |
| CN113345861A (en) * | 2020-02-18 | 2021-09-03 | 朋程科技股份有限公司 | Semi-finished product of power assembly, manufacturing method of semi-finished product and manufacturing method of power assembly |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111211096A (en) * | 2020-01-10 | 2020-05-29 | 珠海格力电器股份有限公司 | Chip module packaging structure and packaging method |
| CN113345861A (en) * | 2020-02-18 | 2021-09-03 | 朋程科技股份有限公司 | Semi-finished product of power assembly, manufacturing method of semi-finished product and manufacturing method of power assembly |
| CN111403366A (en) * | 2020-03-19 | 2020-07-10 | 常州星海电子股份有限公司 | Transient diode and packaging process thereof |
| CN113257683A (en) * | 2021-04-14 | 2021-08-13 | 深圳基本半导体有限公司 | Bonding method of silicon carbide power device chip and lead frame |
| CN113257683B (en) * | 2021-04-14 | 2023-02-28 | 深圳基本半导体有限公司 | Bonding method of silicon carbide power device chip and lead frame |
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Application publication date: 20160525 |