CN105590838B - 强磁性TiO2半导体材料、制备方法、自旋电子器件 - Google Patents
强磁性TiO2半导体材料、制备方法、自旋电子器件 Download PDFInfo
- Publication number
- CN105590838B CN105590838B CN201510984282.8A CN201510984282A CN105590838B CN 105590838 B CN105590838 B CN 105590838B CN 201510984282 A CN201510984282 A CN 201510984282A CN 105590838 B CN105590838 B CN 105590838B
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- Prior art keywords
- tio
- ferromagnetism
- conducting material
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- nano
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- 230000005307 ferromagnetism Effects 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000004020 conductor Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 41
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000004793 Polystyrene Substances 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 18
- 229920002223 polystyrene Polymers 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000002243 precursor Substances 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000084 colloidal system Substances 0.000 claims abstract description 8
- 239000002356 single layer Substances 0.000 claims abstract description 8
- 230000001413 cellular effect Effects 0.000 claims abstract description 7
- 239000002105 nanoparticle Substances 0.000 claims abstract description 5
- 241001466460 Alveolata Species 0.000 claims abstract description 4
- 238000009825 accumulation Methods 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 42
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 29
- 239000008367 deionised water Substances 0.000 claims description 25
- 229910021641 deionized water Inorganic materials 0.000 claims description 25
- 239000011521 glass Substances 0.000 claims description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 10
- 230000005415 magnetization Effects 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 239000005357 flat glass Substances 0.000 claims description 6
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 claims description 6
- 239000004005 microsphere Substances 0.000 claims description 5
- 238000001338 self-assembly Methods 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 239000006193 liquid solution Substances 0.000 claims 1
- 238000004506 ultrasonic cleaning Methods 0.000 claims 1
- 230000005291 magnetic effect Effects 0.000 abstract description 14
- 239000002086 nanomaterial Substances 0.000 abstract description 8
- 230000000737 periodic effect Effects 0.000 abstract description 4
- 238000001802 infusion Methods 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Medicinal Preparation (AREA)
- Hard Magnetic Materials (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510984282.8A CN105590838B (zh) | 2015-12-25 | 2015-12-25 | 强磁性TiO2半导体材料、制备方法、自旋电子器件 |
Applications Claiming Priority (1)
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CN201510984282.8A CN105590838B (zh) | 2015-12-25 | 2015-12-25 | 强磁性TiO2半导体材料、制备方法、自旋电子器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105590838A CN105590838A (zh) | 2016-05-18 |
CN105590838B true CN105590838B (zh) | 2018-01-26 |
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CN201510984282.8A Expired - Fee Related CN105590838B (zh) | 2015-12-25 | 2015-12-25 | 强磁性TiO2半导体材料、制备方法、自旋电子器件 |
Country Status (1)
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CN (1) | CN105590838B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102418133A (zh) * | 2011-12-12 | 2012-04-18 | 天津大学 | 表面粗糙的二氧化钛纳米蜂窝结构薄膜及制备方法 |
CN102943256A (zh) * | 2012-10-24 | 2013-02-27 | 中国科学院化学研究所 | 蜂窝状多孔结构二氧化钛涂层种植体材料及其制备方法 |
CN103224215A (zh) * | 2013-04-09 | 2013-07-31 | 中国科学院合肥物质科学研究院 | 六边形纳米片阵列及其制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000215436A (ja) * | 1999-01-27 | 2000-08-04 | Hitachi Ltd | 磁気記録媒体およびそれを用いた磁気ディスク装置 |
-
2015
- 2015-12-25 CN CN201510984282.8A patent/CN105590838B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102418133A (zh) * | 2011-12-12 | 2012-04-18 | 天津大学 | 表面粗糙的二氧化钛纳米蜂窝结构薄膜及制备方法 |
CN102943256A (zh) * | 2012-10-24 | 2013-02-27 | 中国科学院化学研究所 | 蜂窝状多孔结构二氧化钛涂层种植体材料及其制备方法 |
CN103224215A (zh) * | 2013-04-09 | 2013-07-31 | 中国科学院合肥物质科学研究院 | 六边形纳米片阵列及其制备方法 |
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CN105590838A (zh) | 2016-05-18 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20171205 Address after: No. 1139 Taizhou City, Zhejiang province Jiaojiang City Road 318000 Applicant after: Liu Yanping Applicant after: Zhan Baishao, Taizhou University Applicant after: Zhan Baishao Address before: Taizhou City, Zhejiang province 318000 City Road No. 1139 Applicant before: Taizhou University Applicant before: Liu Yanping Applicant before: Zhan Baishao |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180126 Termination date: 20181225 |