CN105576082A - 一种提高多晶硅电池pecvd工序产能的方法 - Google Patents
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Abstract
本发明公开了一种提高多晶硅电池PECVD工序产能的方法，通过优化镀膜的工艺参数，增加氮化硅膜沉积速率，提高了PECVD工序的产能。
Description
技术领域
本发明涉及一种提高多晶硅电池PECVD工序产能的方法，属于太阳能光伏技术领域。
背景技术
面对全球能源危机，太阳能光伏发电技术已经成为半导体行业的新的发展热点。晶硅太阳能电池制造分为制绒/清洗、扩散、刻蚀/后清洗、PECVD镀膜、丝网印刷、烧结、测试分选等工序。
对于晶体硅太阳能电池管式PECVD（等离子增强化学气相沉积技术）氮化硅薄膜沉积技术，采用氨气和硅烷作为等离子反应气体源，采用石墨舟片做为硅片的承载板和射频电极，常规的PECVD工艺运行一舟需要31min左右，产量较低，随着前道工序产能的提升，PECVD工序成为产能瓶颈，必须通过增加PECVD 机台数来提高产量，由此使得电池制造成本大幅度上升。
发明内容
本发明的目的是提供一种提高多晶硅电池PECVD工序产能的方法，通过优化镀膜的工艺参数，增加氮化硅膜沉积速率，提高了PECVD工序的产能。
一种提高多晶硅电池PECVD工序产能的方法，包括沉积在硅基衬底上包含两层氮化硅膜。
一种提高多晶硅电池PECVD工序产能的方法，硅基衬底上沉积的两层氮化硅膜的第一层厚度为10~20 nm，折射率为2.2~2.3；第二层厚度为60~70 nm，折射率为2.0~2.1。
一种提高多晶硅电池PECVD工序产能的方法，所述硅基衬底为多晶硅衬底。
一种提高多晶硅电池PECVD工序产能的方法，制备方法包括如下步骤：
1）将156×156硅片进行制绒；
2）将制绒后的硅片进行扩散制备PN结，刻蚀去除磷硅玻璃并刻边，即为硅基衬底；
3）将清洗后的硅基衬底插入石墨舟后，置于管式PECVD镀膜设备的沉积腔内抽真空，并升温至300~500 ℃；
4）当PECVD设备真空室真空达到1600~1700 mtor，在炉管内通入气体流量为4200 sccm的氨气、1000 sccm的硅烷，在6500~7200W的射频功率，占空比为4/48~5/50下电离160~190 sec，在硅基衬底上沉积第一层厚度为10~20 nm，折射率为2.3~2.4的氮化硅膜；
5）将镀有第一层氮化硅膜的硅片继续进行沉积，沉积温度为300~500℃，在炉管内通入气体流量为7200 sccm的氨气、800 sccm的硅烷，在6500~7200W的射频功率，占空比5/35~5/32下电离350~500 sec，在第一层氮化硅膜上沉积厚度为60~70 nm，折射率为2.0~2.1的第二层氮化硅膜。
本发明的优点为通过对工艺参数进行优化，无需改进设备，提高了PE工序产能。
具体实施方式
实施例1：
一种提高多晶硅电池PECVD工序产能的方法，包括如下步骤：
1）取电阻率为0.5~3 Ω▪cm的156mm×156mm规格的P型多晶硅片500片，将硅片进行制绒；
2）将制绒后的硅片进行扩散制备PN结，刻蚀去除磷硅玻璃并刻边，即为硅基衬底；
3）将清洗后的硅基衬底插入石墨舟后，置于管式PECVD镀膜设备的沉积腔内抽真空，并升温至400 ℃；
4）当PECVD设备真空室真空达到1600 mtor，在炉管内通入气体流量为4200 sccm的氨气、1000 sccm的硅烷，在6500 W的射频功率，占空比为4/48下电离190 sec，在硅基衬底上沉积第一层厚度为20 nm，折射率为2.3的氮化硅膜；
5）将镀有第一层氮化硅膜的硅片继续进行沉积，沉积温度为400~480℃，在炉管内通入气体流量为7200 sccm的氨气、680 sccm的硅烷，在6500 W的射频功率，占空比为5/35下电离420 sec，在第一层氮化硅膜上沉积厚度为65 nm，折射率为2.04的第二层氮化硅膜。
实施例2：
一种提高多晶硅电池PECVD工序产能的方法，包括如下步骤：
1）取电阻率为0.5~3 Ω▪cm的156mm×156mm规格的P型多晶硅片500片，将硅片进行制绒；
2）将制绒后的硅片进行扩散制备PN结，刻蚀去除磷硅玻璃并刻边，即为硅基衬底；
3）将清洗后的硅基衬底插入石墨舟后，置于管式PECVD镀膜设备的沉积腔内抽真空，并升温至400 ℃；
4）当PECVD设备真空室真空达到1700 mtor，在炉管内通入气体流量为4200 sccm的氨气、1000 sccm的硅烷，在6500 W的射频功率，占空比为5/50下电离160 sec，在硅基衬底上沉积第一层厚度为20 nm，折射率为2.3的氮化硅膜；
5）将镀有第一层氮化硅膜的硅片继续进行沉积，沉积温度为400~480℃，在炉管内通入气体流量为7200 sccm的氨气、680 sccm的硅烷，在6500 W的射频功率，占空比为5/32下电离390 sec，在第一层氮化硅膜上沉积厚度为65 nm，折射率为2.04的第二层氮化硅膜。
对比例：
常规的PECVD工艺，包括如下步骤：
1）取电阻率为0.5~3 Ω▪cm的156mm×156mm规格的P型多晶硅片500片，将硅片进行制绒；
2）将制绒后的硅片进行扩散制备PN结，刻蚀去除磷硅玻璃并刻边，即为硅基衬底；
3）将清洗后的硅基衬底插入石墨舟后，置于管式PECVD镀膜设备的沉积腔内抽真空，并升温至400 ℃；
4）当PECVD设备真空室真空达到1600 mtor，在炉管内通入气体流量为4200 sccm的氨气、1000 sccm的硅烷，在6500 W的射频功率，占空比为4/48下电离190 sec，在硅基衬底上沉积第一层厚度为20 nm，折射率为2.3的氮化硅膜；
5）将镀有第一层氮化硅膜的硅片继续进行沉积，沉积温度为400~480℃，在炉管内通入气体流量为7200 sccm的氨气、680 sccm的硅烷，在6500 W的射频功率，占空比为4/40下电离510 sec，在第一层氮化硅膜上沉积厚度为65 nm，折射率为2.04的第二层氮化硅膜。
结果对比：
从上表的数据可以看出，本发明的实施例1和2与对比例比较，产能有较大幅度提升，同时效率也有明显提高。
Claims (4)
1.一种提高多晶硅电池PECVD工序产能的方法，其特征为：包括沉积在硅基衬底上包含两层氮化硅膜。
2.如权利要求1所述的一种提高多晶硅电池PECVD工序产能的方法，其特征为：硅基衬底上沉积的两层氮化硅膜的第一层厚度为10~20 nm，折射率为2.2~2.3；第二层厚度为60~70 nm，折射率为2.0~2.1。
3.如权利要求1所述的一种提高多晶硅电池PECVD工序产能的方法，其特征为：所述硅基衬底为多晶硅衬底。
4.一种提高多晶硅电池PECVD工序产能的方法，其特征为：制备方法包括如下步骤：
1）将156×156硅片进行制绒；
2）将制绒后的硅片进行扩散制备PN结，刻蚀去除磷硅玻璃并刻边，即为硅基衬底；
3）将清洗后的硅基衬底插入石墨舟后，置于管式PECVD镀膜设备的沉积腔内抽真空，并升温至300~500 ℃；
4）当PECVD设备真空室真空达到1600~1700
mtor，在炉管内通入气体流量为4200 sccm的氨气、1000 sccm的硅烷，在6500~7200W的射频功率，占空比为4/48~5/50下电离160~190 sec，在硅基衬底上沉积第一层厚度为10~20 nm，折射率为2.3~2.4的氮化硅膜；
5）将镀有第一层氮化硅膜的硅片继续进行沉积，沉积温度为300~500℃，在炉管内通入气体流量为7200 sccm的氨气、800 sccm的硅烷，在6500~7200W的射频功率，占空比5/35~5/32下电离350~500 sec，在第一层氮化硅膜上沉积厚度为60~70 nm，折射率为2.0~2.1的第二层氮化硅膜。
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| CN108048821A (zh) * | 2017-12-14 | 2018-05-18 | 尚德太阳能电力有限公司 | 提升管式pecvd工艺产能的方法及其应用 |
| CN109037358A (zh) * | 2018-08-01 | 2018-12-18 | 通威太阳能（成都）有限公司 | 一种提升双面perc电池板式pecvd镀膜产能的方法 |
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| CN103545197A (zh) * | 2013-10-24 | 2014-01-29 | 英利能源（中国）有限公司 | 一种管式pecvd双层氮化硅膜的制备工艺 |
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| US5932286A (en) * | 1993-03-16 | 1999-08-03 | Applied Materials, Inc. | Deposition of silicon nitride thin films |
| CN101707225A (zh) * | 2009-07-29 | 2010-05-12 | 湖南红太阳新能源科技有限公司 | 改善单晶硅太阳能电池减反射膜特性的方法 |
| CN103545197A (zh) * | 2013-10-24 | 2014-01-29 | 英利能源（中国）有限公司 | 一种管式pecvd双层氮化硅膜的制备工艺 |
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| CN108048821A (zh) * | 2017-12-14 | 2018-05-18 | 尚德太阳能电力有限公司 | 提升管式pecvd工艺产能的方法及其应用 |
| CN109037358A (zh) * | 2018-08-01 | 2018-12-18 | 通威太阳能（成都）有限公司 | 一种提升双面perc电池板式pecvd镀膜产能的方法 |
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