CN103545197A - 一种管式pecvd双层氮化硅膜的制备工艺 - Google Patents
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Abstract
本发明公开了一种管式PECVD双层氮化硅膜的制备工艺,属于多晶硅的制备领域。本发明的具体步骤为:首先,石英炉管升温;接着,镀第一层氮化硅膜、镀第二层氮化硅膜,最后出舟。本发明的制备工艺与现有的制备工艺相比省去了镀膜前钝化工艺,节约了整个工艺的持续时间,提高了管式PECVD的产量,降低了制备成本,同时避免了氮化硅膜沉积之前的高频操作对硅片表面的损伤;本发明还升高了氮化硅双层膜的制备温度,两种改进相结合最终使得制备的太阳能电池的短路电流和开路电压得到了提高,将太阳能电池的转换效率提高了约0.1%,使得转换效率得到了实质性的提高。
Description
技术领域
本发明属于多晶硅制备领域。
背景技术
多晶硅电池的生产主要流程为:制绒、扩散、湿法刻蚀、PECVD(等离子增强型化学气相沉积,Plasma Enhanced Chemical Vapor Deposition)氮化硅薄膜、丝网印刷和烧结。在多晶硅太阳电池的生产过程中,需要对扩散后的硅表面沉积一层减反射膜层以减少太阳光在表面发生反射。氮化硅薄膜具有高的化学稳定性、高电阻率、绝缘性好、硬度高、光学性能良好等特性,在太阳能电池上得到广泛的应用。作为减反射膜,氮化硅薄膜具有良好的光学性能(其折射率在2.0左右,比传统的二氧化硅减反射膜具有更好的减反射效果)。同时,氮化硅薄膜还具有良好的钝化效果,对质量较差的硅片能起到表面和体内的钝化作用。目前,平板式PECVD和管式PECVD在工业生产中得到了广泛应用。相对平板式PECVD,管式PECVD有着更好的钝化效果对太阳电池转换效率有着更好的作用。如何优化PECVD工艺参数获得更好的太阳电池转换效率成了工艺人员追求的目标。
目前,工业生产中多采用双层氮化硅膜工艺,分别采用不同厚度和折射率的氮化硅膜组合成太阳电池的钝化、减反射膜。其中第一层膜厚度一般在10-20nm,折射率在2.2-2.3,主要起到钝化的作用,而第二层膜厚度一般在60-80nm,折射率在2.05-2.15,主要起到减反射的作用。
通常双层氮化硅膜的制备工艺过程及参数如下:
1、在N2的保护下,将石英炉管升温至氮化硅膜沉积的温度400-460℃。
2、在压强为1400-1700mTorr,NH3流量为2.0-3.0L,射频功率为4500-5500W,进行预沉积200-300s。(镀膜前钝化步骤)
3、在同一温度下(400-460℃),在压强为1400-1600mTorr,SiH4:NH3流量比为1:3-1:5,射频功率为6100-6800W,沉积时间为120-200s,进行第一层氮化硅膜的沉积。
4、在同一温度下(400-460℃),在压强为1400-1600mTorr,SiH4:NH3流量比为1:6-1:14,射频功率为6100-6800W,沉积时间为600-800s,进行第二层氮化硅膜的沉积。
5、完成氮化硅膜的沉积工艺,在400-460℃下出舟。
由上述可知,双层氮化硅膜的两层膜一般在相同的工艺参数下沉积,只是沉积时间上略有不同,不同的工艺过程对沉积的氮化硅膜有着重要的影响,进而影响太阳电池的电学参数,如何优化工艺过程及工艺参数,对提高这两层氮化硅膜的质量起到更好的钝化和减反射效果对太阳电池的转换效率有着重要的影响。
发明内容
本发明要解决的技术问题是提供一种管式PECVD双层氮化硅膜的制备工艺,该工艺略去了现有工艺中的前钝化步骤,简化了工艺步骤,同时调整了氮化硅双层膜的制备温度,使得制备的太阳能电池的转化效率得到了实质性的提高。
为解决上述技术问题,本发明采用的技术方案为:一种管式PECVD双层氮化硅膜的制备工艺,包括如下步骤:
S1、在N2的保护下,将石英炉管升温至氮化硅膜沉积的温度405-470℃;
S2、在温度为405-470℃时,进行第一层氮化硅膜的沉积,沉积时间为120-200s;
S3、在温度为405-470℃时,进行第二层氮化硅膜的沉积,沉积时间为700-900s;
S4、完成氮化硅膜的沉积工艺,在405-440℃下出舟。
所述步骤S2中具体参数为:压强为1400-1600mTorr,SiH4:NH3的流量比为1:3-1:5,射频功率为6100-6500W,氮化硅膜层的沉积厚度约为15nm,折射率为2.2。
所述步骤S3中具体参数为:压强为1400-1600mTorr,SiH4:NH3的流量比为1:6-1:14,射频功率为5300-6000W,氮化硅膜层的沉积厚度为60nm,折射率约为2.04。
采用上述技术方案取得的技术进步为:本发明的制备工艺与现有的制备工艺相比省去了镀膜前钝化工艺,节约了整个工艺的持续时间,提高了管式PECVD的产量,降低了制备成本,同时避免了氮化硅膜沉积之前的高频操作对硅片表面的损伤;本发明还升高了氮化硅双层膜的制备温度,两种改进相结合最终使得制备的太阳能电池的短路电流和开路电压得到了提高,将太阳能电池的转换效率提高了约0.1%,使得转换效率得到了实质性的提高。
具体实施方式
实施例1
一种管式PECVD双层氮化硅膜的制备工艺,包括如下步骤:
S1、在N2的保护下,将石英炉管升温至氮化硅膜沉积的温度405℃;
S2、在温度为405℃,进行第一层氮化硅膜的沉积,沉积时间为120s;
S3、在温度为405℃,进行第二层氮化硅膜的沉积,沉积时间为700s;
S4、完成氮化硅膜的沉积工艺,在405℃下出舟。
所述步骤S2中具体参数为:压强为1400mTorr,SiH4:NH3流量比为1:3,射频功率为6100W,氮化硅膜层的沉积厚度约为15nm,折射率为2.2。
所述步骤S3中具体参数为:压强为1400mTorr,SiH4:NH3流量比为1:6,射频功率为5300W,氮化硅膜层的沉积厚度为60nm,折射率约为2.04。
本发明的制备方法与现有的制备工艺相比,最明显的区别在于略去了制备氮化硅双层膜之前的前钝化步骤并提高了两次镀膜时所需的温度。
在现有工艺中,在沉积氮化硅膜之前都会有一个钝化的过程,工艺开始5-10min,只通NH3在高频下放电从而得到H原子,从而对硅片中的缺陷以及晶界等进行钝化处理。前钝化工艺时间较长,占氮化硅膜沉积工艺所用时间的1/3-1/2,严重影响着管式PECVD的产量;另外前钝化过程中需要开启高频,这会对硅片表面引起一定的损伤。前钝化的最终结果会降低太阳能电池的短路电流和开路电压,从而降低太阳能电池的转换效率。
但是本发明略去了前钝化的步骤,这样既节省了钝化步骤所需的NH3,又节省了前钝化所需的时间,大大缩短了整个工艺所用的时间,提高了PECVD的产出率。与此同时,本发明还将氮化硅膜的沉积温度相应的提升了5-15℃。这样做的目的是有效降低管式PECVD在硅片四周氮化硅不均匀引起的色差,从而提高PECVD工序的成品率。
实施例2
一种管式PECVD双层氮化硅膜的制备工艺,包括如下步骤:
S1、在N2的保护下,将石英炉管升温至氮化硅膜沉积的温度461℃;
S2、在温度为430℃,进行第一层氮化硅膜的沉积,沉积时间为150s;
S3、在温度为461℃,进行第二层氮化硅膜的沉积,沉积时间为650s;
S4、完成氮化硅膜的沉积工艺,在430℃下出舟。
所述步骤S2中具体参数为:压强为1500mTorr,SiH4:NH3流量比为1:4,射频功率为6300W,沉积厚度约为18nm,折射率为2.3的氮化硅膜层,从而起到更好的钝化作用;
所述步骤S3中具体参数为:压强为1500mTorr,SiH4:NH3流量比为1:10,射频功率为5500W,沉积厚度为65nm,折射率约为2.06的氮化硅膜主要起到减反射的作用。
与实施例1相比,本实施例中,沉积氮化硅膜的温度、持续时间、步骤S2和S3中的压强、SiH4:NH3流量比以及射频功率等参数有了些许变化。
实施例3
一种管式PECVD双层氮化硅膜的制备工艺,包括如下步骤:
S1、在N2的保护下,将石英炉管升温至氮化硅膜沉积的温度470℃;
S2、在温度为470℃,进行第一层氮化硅膜的沉积,沉积时间为200s;
S3、在温度为465℃,进行第二层氮化硅膜的沉积,沉积时间为800s;
S4、完成氮化硅膜的沉积工艺,在440℃下出舟。
所述步骤S2中具体参数为:压强为1600mTorr,SiH4:NH3流量比为1:5,射频功率为6800W,沉积厚度约为20nm,折射率为2.4的氮化硅膜层,从而起到更好的钝化作用。
所述步骤S3中具体参数为:压强为1500mTorr,SiH4:NH3流量比为1:14,射频功率为6000W,沉积厚度为70nm,折射率约为2.08的氮化硅膜主要起到减反射的作用。
表1所示为含有前钝化过程和略去前钝化过程两种制备工艺制成的太阳能电池的各种参数比较。
表1
过程1和过程2、过程3和过程4、过程5和过程6在工艺上区别仅仅是前钝化步骤和沉积温度,其他参数都相同。以开路电压Uoc为例,过程1的Uoc为0.624V,过程2的却为0.625V,两者相差了0.001V,过程3和过程4、过程5和过程6的差值也都为0.001V;在短路电流Isc上,两种不同过程的差值约为0.14-0.026A;而填充FF在两种不同过程的差值约为0.05-0.24%。从上述结果中,可以很明显的发现,通过去除“前钝化”步骤更加有利于提高太阳电池的电学参数。
本发明在节省原料和时间的同时,还将开路电压Uoc提高了1%,提高了太阳电池转换效率,同时太阳电池转换效率的提高对电池的成本的下降起到了推动作用,一举两得,这就是本发明最大的创造性所在。
Claims (3)
1.一种管式PECVD双层氮化硅膜的制备工艺,其特征在于包括如下步骤:
S1、在N2的保护下,将石英炉管升温至氮化硅膜沉积的温度405-470℃;
S2、在温度为405-470℃时,进行第一层氮化硅膜的沉积,沉积时间为120-200s;
S3、在温度为405-470℃时,进行第二层氮化硅膜的沉积,沉积时间为700-900s;
S4、完成氮化硅膜的沉积工艺,在405-440℃下出舟。
2.根据权利要求1所述的一种管式PECVD双层氮化硅膜的制备工艺,其特征在于所述步骤S2中具体参数为:压强为1400-1600mTorr,SiH4:NH3的流量比为1:3-1:5,射频功率为6100-6500W,氮化硅膜层的沉积厚度约为15-20nm,折射率为2.2-2.4。
3.根据权利要求1或2所述的一种管式PECVD双层氮化硅膜的制备工艺,其特征在于所述步骤S3中具体参数为:压强为1400-1600mTorr,SiH4:NH3的流量比为1:6-1:14,射频功率为5300-6000W,氮化硅膜层的沉积厚度为60-70nm,折射率为2.04-2.08。
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