CN105517790A - 使用具有嵌段共聚物涂层的导电颗粒的固定阵列各向异性导电膜 - Google Patents
使用具有嵌段共聚物涂层的导电颗粒的固定阵列各向异性导电膜 Download PDFInfo
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- CN105517790A CN105517790A CN201480049526.7A CN201480049526A CN105517790A CN 105517790 A CN105517790 A CN 105517790A CN 201480049526 A CN201480049526 A CN 201480049526A CN 105517790 A CN105517790 A CN 105517790A
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29455—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/2946—Iron [Fe] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29463—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29469—Platinum [Pt] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
- H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
- H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0221—Insulating particles having an electrically conductive coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
- Y10T428/24372—Particulate matter
- Y10T428/2438—Coated
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Non-Insulated Conductors (AREA)
- Conductive Materials (AREA)
- Laminated Bodies (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/022,791 | 2013-09-10 | ||
| US14/022,791 US20150072109A1 (en) | 2013-09-10 | 2013-09-10 | Fixed-array anisotropic conductive film using conductive particles with block copolymer coating |
| PCT/US2014/053609 WO2015038363A1 (en) | 2013-09-10 | 2014-08-30 | Fixed-array anisotropic conductive film using conductive particles with block copolymer coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105517790A true CN105517790A (zh) | 2016-04-20 |
Family
ID=52625899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480049526.7A Pending CN105517790A (zh) | 2013-09-10 | 2014-08-30 | 使用具有嵌段共聚物涂层的导电颗粒的固定阵列各向异性导电膜 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20150072109A1 (enExample) |
| JP (1) | JP2016536763A (enExample) |
| KR (1) | KR20160054588A (enExample) |
| CN (1) | CN105517790A (enExample) |
| TW (1) | TWI600032B (enExample) |
| WO (1) | WO2015038363A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110544554A (zh) * | 2019-08-15 | 2019-12-06 | 深圳市华科创智技术有限公司 | 一种无序共叠透明导电膜及其制备方法 |
| CN110564337A (zh) * | 2019-09-12 | 2019-12-13 | 天津伟景诺兰达科技有限公司 | 一种acf导电胶带及其制备工艺和应用 |
| CN115815092A (zh) * | 2022-11-24 | 2023-03-21 | 电子科技大学 | 一种具有双层导电网络的超疏水导电无纺布的制备方法和应用 |
| WO2023083202A1 (zh) * | 2021-11-15 | 2023-05-19 | 华为技术有限公司 | 颗粒的排列方法、各向异性功能胶膜的制造方法、功能性颗粒及其制造方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118325319A (zh) * | 2016-05-05 | 2024-07-12 | 迪睿合株式会社 | 填充剂配置膜 |
| CN108445397B (zh) * | 2018-02-01 | 2020-08-18 | 宁德时代新能源科技股份有限公司 | 绝缘检测电路的参数选取方法和装置、存储介质 |
| WO2022019075A1 (ja) * | 2020-07-21 | 2022-01-27 | 京セラ株式会社 | 熱伝導性接着用シート、及び半導体装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1115485A (zh) * | 1994-05-10 | 1996-01-24 | 日立化成工业株式会社 | 各向异性的导电树脂膜 |
| US6699941B1 (en) * | 2002-11-07 | 2004-03-02 | Kraton Polymers U.S. Llc | Block copolymer |
| US20060199887A1 (en) * | 2004-03-17 | 2006-09-07 | Dow Global Technologies Inc. | Filled polymer compositions made from interpolymers of ethylene/a-olefins and uses thereof |
| US20070059503A1 (en) * | 2004-05-12 | 2007-03-15 | Park Jin G | Insulated conductive particles and anisotropic conductive adhesive film containing the particles |
| US20120295098A1 (en) * | 2011-05-19 | 2012-11-22 | Trillion Science, Inc. | Fixed-array anisotropic conductive film using surface modified conductive particles |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3678547B2 (ja) * | 1997-07-24 | 2005-08-03 | ソニーケミカル株式会社 | 多層異方導電性接着剤およびその製造方法 |
| JP2000198880A (ja) * | 1998-10-27 | 2000-07-18 | Sekisui Chem Co Ltd | 微粒子の被覆方法、被覆微粒子、異方性導電接着剤及び導電接続構造体 |
| JP3624818B2 (ja) * | 1999-10-12 | 2005-03-02 | ソニーケミカル株式会社 | 異方性導電接続材料、接続体、およびその製造方法 |
| WO2002035555A1 (fr) * | 2000-10-23 | 2002-05-02 | Sekisui Chemical Co., Ltd. | Particule enrobee |
| TW557237B (en) * | 2001-09-14 | 2003-10-11 | Sekisui Chemical Co Ltd | Coated conductive particle, coated conductive particle manufacturing method, anisotropic conductive material, and conductive connection structure |
| US8802214B2 (en) * | 2005-06-13 | 2014-08-12 | Trillion Science, Inc. | Non-random array anisotropic conductive film (ACF) and manufacturing processes |
| JP2007217503A (ja) * | 2006-02-15 | 2007-08-30 | Asahi Kasei Electronics Co Ltd | 異方導電性接着フィルム |
-
2013
- 2013-09-10 US US14/022,791 patent/US20150072109A1/en not_active Abandoned
-
2014
- 2014-08-30 WO PCT/US2014/053609 patent/WO2015038363A1/en not_active Ceased
- 2014-08-30 KR KR1020167009445A patent/KR20160054588A/ko not_active Withdrawn
- 2014-08-30 CN CN201480049526.7A patent/CN105517790A/zh active Pending
- 2014-08-30 JP JP2016542006A patent/JP2016536763A/ja active Pending
- 2014-09-05 TW TW103130696A patent/TWI600032B/zh not_active IP Right Cessation
-
2016
- 2016-07-15 US US15/211,042 patent/US20170004901A1/en not_active Abandoned
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1115485A (zh) * | 1994-05-10 | 1996-01-24 | 日立化成工业株式会社 | 各向异性的导电树脂膜 |
| US6699941B1 (en) * | 2002-11-07 | 2004-03-02 | Kraton Polymers U.S. Llc | Block copolymer |
| US20060199887A1 (en) * | 2004-03-17 | 2006-09-07 | Dow Global Technologies Inc. | Filled polymer compositions made from interpolymers of ethylene/a-olefins and uses thereof |
| US20070059503A1 (en) * | 2004-05-12 | 2007-03-15 | Park Jin G | Insulated conductive particles and anisotropic conductive adhesive film containing the particles |
| CN1954393A (zh) * | 2004-05-12 | 2007-04-25 | 第一毛织株式会社 | 绝缘导电颗粒以及包含该颗粒的各向异性导电胶膜 |
| US20120295098A1 (en) * | 2011-05-19 | 2012-11-22 | Trillion Science, Inc. | Fixed-array anisotropic conductive film using surface modified conductive particles |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110544554A (zh) * | 2019-08-15 | 2019-12-06 | 深圳市华科创智技术有限公司 | 一种无序共叠透明导电膜及其制备方法 |
| CN110564337A (zh) * | 2019-09-12 | 2019-12-13 | 天津伟景诺兰达科技有限公司 | 一种acf导电胶带及其制备工艺和应用 |
| WO2023083202A1 (zh) * | 2021-11-15 | 2023-05-19 | 华为技术有限公司 | 颗粒的排列方法、各向异性功能胶膜的制造方法、功能性颗粒及其制造方法 |
| CN115815092A (zh) * | 2022-11-24 | 2023-03-21 | 电子科技大学 | 一种具有双层导电网络的超疏水导电无纺布的制备方法和应用 |
| CN115815092B (zh) * | 2022-11-24 | 2023-06-30 | 电子科技大学 | 一种具有双层导电网络的超疏水导电无纺布的制备方法和应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20170004901A1 (en) | 2017-01-05 |
| TW201526031A (zh) | 2015-07-01 |
| US20150072109A1 (en) | 2015-03-12 |
| TWI600032B (zh) | 2017-09-21 |
| KR20160054588A (ko) | 2016-05-16 |
| JP2016536763A (ja) | 2016-11-24 |
| WO2015038363A1 (en) | 2015-03-19 |
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