CN105514177B - 一种铝面低压平面式mos肖特基二极管 - Google Patents
一种铝面低压平面式mos肖特基二极管 Download PDFInfo
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- CN105514177B CN105514177B CN201610075444.0A CN201610075444A CN105514177B CN 105514177 B CN105514177 B CN 105514177B CN 201610075444 A CN201610075444 A CN 201610075444A CN 105514177 B CN105514177 B CN 105514177B
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- 239000004411 aluminium Substances 0.000 title claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000005452 bending Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 241000790917 Dioxys <bee> Species 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610075444.0A CN105514177B (zh) | 2016-02-03 | 2016-02-03 | 一种铝面低压平面式mos肖特基二极管 |
Applications Claiming Priority (1)
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CN201610075444.0A CN105514177B (zh) | 2016-02-03 | 2016-02-03 | 一种铝面低压平面式mos肖特基二极管 |
Publications (2)
Publication Number | Publication Date |
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CN105514177A CN105514177A (zh) | 2016-04-20 |
CN105514177B true CN105514177B (zh) | 2018-07-24 |
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CN201610075444.0A Expired - Fee Related CN105514177B (zh) | 2016-02-03 | 2016-02-03 | 一种铝面低压平面式mos肖特基二极管 |
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CN (1) | CN105514177B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN204102882U (zh) * | 2014-08-19 | 2015-01-14 | 无锡中微高科电子有限公司 | 高密度陶瓷封装用弹性引脚 |
CN104362133A (zh) * | 2014-10-16 | 2015-02-18 | 东莞市柏尔电子科技有限公司 | 一种三极管的固定装置 |
CN204315577U (zh) * | 2014-12-31 | 2015-05-06 | 杭州士兰集成电路有限公司 | 一种二极管结构 |
CN104810410A (zh) * | 2015-05-08 | 2015-07-29 | 西安西奈电子科技有限公司 | 一种肖特基二极管器件及制造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3146681B2 (ja) * | 1992-09-17 | 2001-03-19 | 日本電気株式会社 | ペレット突き上げ用ピン |
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- 2016-02-03 CN CN201610075444.0A patent/CN105514177B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN204102882U (zh) * | 2014-08-19 | 2015-01-14 | 无锡中微高科电子有限公司 | 高密度陶瓷封装用弹性引脚 |
CN104362133A (zh) * | 2014-10-16 | 2015-02-18 | 东莞市柏尔电子科技有限公司 | 一种三极管的固定装置 |
CN204315577U (zh) * | 2014-12-31 | 2015-05-06 | 杭州士兰集成电路有限公司 | 一种二极管结构 |
CN104810410A (zh) * | 2015-05-08 | 2015-07-29 | 西安西奈电子科技有限公司 | 一种肖特基二极管器件及制造方法 |
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CN105514177A (zh) | 2016-04-20 |
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Effective date of registration: 20180516 Address after: 225500 No. 997, South Ring Road, rotong street, Jiangyan District, Taizhou, Jiangsu Applicant after: TAIZHOU MENGZHIGU TECHNOLOGY DEVELOPMENT CO.,LTD. Address before: 225500 Yangzhou Road, Jiangyan Economic Development Zone, Taizhou, Jiangsu 99 Applicant before: TAIZHOU YOUBIN WAFER TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20210907 Address after: 251800 north of West first road, industrial Second Road, Yangxin County Economic Development Zone, Binzhou City, Shandong Province Patentee after: SHANDONG YANGXIN MINGTAI ELECTRIC Co.,Ltd. Address before: No. 997, Nanhuan West Road, Luotang street, Jiangyan District Patentee before: TAIZHOU MENGZHIGU TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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Granted publication date: 20180724 |