CN105511222A - Photomask defect repairing method and photomask - Google Patents
Photomask defect repairing method and photomask Download PDFInfo
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- CN105511222A CN105511222A CN201410542511.6A CN201410542511A CN105511222A CN 105511222 A CN105511222 A CN 105511222A CN 201410542511 A CN201410542511 A CN 201410542511A CN 105511222 A CN105511222 A CN 105511222A
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Abstract
The invention discloses photomask defect repairing method and a photomask. The photomask defect repairing method comprises the following steps: opening the original data file of a photomask to obtain the original pattern of the photomask, obtaining the referential pattern of the photomask by correcting the original pattern; scanning partial photomask by a scanning machine to obtaining an SEM pattern of photomask defect; comparing the referential pattern and the SEM pattern so as to determine the positions of defects on the photomask, and repairing the defects of the photomask. According to the method, the referential pattern of a photomask can be obtained from the original data file of the photomask, thus the method can obtain the referential pattern of any photomask, and the problem that the referential pattern of a photomask is difficult to obtain is solved.
Description
Technical field
The application relates to the technical field of SIC (semiconductor integrated circuit), in particular to a kind of defect-restoration method therefor and light shield of light shield.
Background technology
In the manufacturing process of SIC (semiconductor integrated circuit), need the position adopting light shield definition circuit figure, then by litho machine, photoengraving is carried out to projected circuitous pattern, to form required device on a semiconductor substrate.The method forming light shield comprises: first, and quartz glass plates layer of metal chromium and photoresists successively along the direction away from quartz glass; Then, the circuitous pattern designed is exposed on photoresists by electronic laser equipment; Finally, along the pattern etch crome metal in photoresists to form circuitous pattern.The method can introduce defect usually in formed light shield, and such as, when etching crome metal, on the uneven or crome metal of exposure energy, the particulate etc. be infected with in a little environment all can introduce defect in formed light shield, thus makes figure in light shield produce error.
Usually the defect on light shield is repaired in prior art, to reduce pattern error in light shield, and obtain the light shield conforming with designing requirement.At present, the general graphic correlation method that adopts is repaired the defect in light shield to be repaired.This restorative procedure comprises the following steps: first, obtains the SEM figure of other normal regions in normal light shield (not containing the light shield of defect) or light shield to be repaired, and using this SEM figure as reference figure; Then, scanning machine is adopted to scan light shield to be repaired, to obtain the SEM figure of light shield to be repaired; Next, the SEM figure with reference to figure and light shield to be repaired contrasts, and to determine the defective locations in light shield to be repaired, and then confirms the position needing reparation; Finally, the defect in light shield to be repaired is repaired.
But, for the light shield of some uniquenesses, particularly there is the light shield of less characteristic dimension, less defect standard, may exist and cannot obtain a normal light shield (not containing the light shield of defect).In the method for repair this type of light shield to be repaired, be difficult to find suitable reference pattern, the restorative procedure of light shield to be repaired cannot be realized.Meanwhile, in existing restorative procedure normally by visual inspection to contrast the raw data file of light shield and the SEM figure of light shield to be repaired, the position of the defect therefore in obtained light shield is often not accurate enough, have impact on the accuracy of reparation.For the problems referred to above, also there is no effective solution at present.
Summary of the invention
The application aims to provide a kind of defect-restoration method therefor and light shield of light shield, to be difficult to find the problem of reference pattern in the defect-restoration method therefor solving light shield.
To achieve these goals, this application provides a kind of defect-restoration method therefor and light shield of light shield, this defect-restoration method therefor comprises: open the raw data file of light shield to obtain the original figure of light shield, and by revising original figure to obtain the reference pattern of light shield; Scanning machine is adopted to scan part light shield, to obtain the SEM figure of light shield; Contrast with reference to figure and SEM figure, to locate the position of the defect in light shield; Repair the defect in light shield.
Further, in above-mentioned defect-restoration method therefor, the step revising original figure comprises: correspond to the part of SEM figure in intercepting original figure as initial reference figure; The round and smooth process in corner and profile are carried out to initial reference figure and takes out limit process, to obtain middle reference figure; Amplification process is carried out, to obtain the reference pattern mated with described SEM dimension of picture to middle reference pattern.
Further, in above-mentioned defect-restoration method therefor, obtain in the step of original figure, open and deposit in raw data file in worktable window system to obtain original figure.
Further, in above-mentioned defect-restoration method therefor, obtain in the step of initial reference figure, intercepting the length of side is that the original figure of 2 ~ 4 μm is as initial reference figure.
Further, in above-mentioned defect-restoration method therefor, obtain in the step of middle reference figure, employing worktable window system automatically carries out the round and smooth process in corner to initial reference figure and profile takes out limit process, to obtain middle reference figure.
Further, in above-mentioned defect-restoration method therefor, the step obtaining middle reference figure comprises: adopt worktable window system to carry out the round and smooth process in corner to reference pattern, become fillet to make the vertical edges dihedral of initial reference figure; Adopt worktable window system to carry out profile to the initial reference figure after the round and smooth process in corner and take out limit process, to obtain the graph outline of the initial reference figure after the round and smooth process in corner, and using graph outline as middle reference figure.
Further, in above-mentioned defect-restoration method therefor, location light shield in defect position step in, by SEM graph copying to worktable window system to contrast with reference to figure and SEM figure.
Further, in above-mentioned defect-restoration method therefor, the step of the position of the defect in the light shield of location comprises: superpose with reference to figure and SEM figure; Contrast reference pattern and SEM figure are to find out the defect in light shield; Obtain the position coordinates of the defect in light shield, to locate the position of the defect in light shield.
Further, in above-mentioned defect-restoration method therefor, the method for repairing the defect in light shield is focused ion beam bombardment or ionic reaction deposition.
Further, in above-mentioned defect-restoration method therefor, raw data file is GDS file.
Present invention also provides a kind of light shield, the above-mentioned defect-restoration method therefor reparation of this light shield the application forms.
The technical scheme of application the application, by opening the raw data file of light shield to obtain the original figure of light shield, and by revising original figure to obtain the reference pattern of light shield, then the SEM figure with reference to figure and light shield carries out the position contrasting the defect of locating in light shield, thus achieves the object of the defect of repairing in light shield.The method obtains the reference pattern of light shield from the raw data file of light shield, and thus the method can obtain the reference pattern of any light shield, thus solves the problem being difficult to find reference pattern in the defect-restoration method therefor of light shield.Meanwhile, the application also passes through by SEM graph copying in worktable window system, and is contrasted by automatic reference pattern and described SEM figure, thus obtains the defective locations in light shield more accurately, and then improves the accuracy of the defect repair in light shield.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide further understanding of the present application, and the schematic description and description of the application, for explaining the application, does not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 shows the schematic flow sheet of the defect-restoration method therefor of the light shield that the application's embodiment provides;
Fig. 2 shows in the defect-restoration method therefor of the light shield that the application's embodiment provides, and opens the raw data file of light shield to obtain the original figure of light shield, and by revising the reference pattern of the light shield that original figure obtains;
Fig. 3 show adopt scanning machine to part light shield carry out scanning obtain the SEM figure of light shield;
Fig. 4 shows the schematic diagram after being contrasted by the SEM figure shown in the reference pattern shown in Fig. 2 and Fig. 3; And
After Fig. 5 shows the defect of repairing in light shield form the cross-sectional view of light shield.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the application in detail in conjunction with the embodiments.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Such as, " in other devices or structure below " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
As what introduce in background technology, in the method for repair light shield, be difficult to find suitable reference pattern, the restorative procedure of light shield cannot be realized.Present inventor studies for the problems referred to above, proposes a kind of defect-restoration method therefor of light shield.As shown in Figure 1, this defect-restoration method therefor comprises: open the raw data file of light shield to obtain the original figure of light shield, and by revising original figure to obtain the reference pattern of light shield; Scanning machine is adopted to scan part light shield, to obtain the SEM figure of light shield; Contrast with reference to figure and SEM figure, to locate the position of the defect in light shield; Repair the defect in light shield.
Above-mentioned defect-restoration method therefor is by opening the raw data file of light shield to obtain the original figure of light shield, and by revising original figure to obtain the reference pattern of light shield, then the SEM figure with reference to figure and light shield carries out the position contrasting the defect of locating in light shield, thus achieves the object of the defect of repairing in light shield.The method obtains the reference pattern of light shield from the raw data file of light shield, and thus the method can obtain the reference pattern of any light shield, thus solves the problem being difficult to find reference pattern in the defect-restoration method therefor of light shield.Meanwhile, the application also passes through by SEM graph copying in worktable window system, and is contrasted by automatic reference pattern and described SEM figure, thus obtains the defective locations in light shield more accurately, and then improves the accuracy of the defect repair in light shield.
Illustrative embodiments according to the application will be described in more detail below.But these illustrative embodiments can be implemented by multiple different form, and should not be interpreted as being only limited to embodiment set forth herein.Should be understood that, there is provided these embodiments be in order to make the application open thorough and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expand the thickness in layer and region, and use the device that identical Reference numeral represents identical, thus will omit description of them.
Fig. 2 to Fig. 5 shows in the restorative procedure of the light shield that the application provides, the schematic diagram of the matrix obtained after each step.Below in conjunction with Fig. 2 to Fig. 5, further illustrate the restorative procedure of the light shield that the application provides.
First, open the raw data file of light shield to obtain the original figure of light shield, and by revising original figure to obtain the reference pattern of light shield, its structure as shown in Figure 2.Wherein, the form of raw data file can be data layout common in this area, and in a preferred embodiment, raw data file is GDS (graph data stream format) file.Certainly, the form that can also approve for OASIS (open architecture interactive standard format) or International Electrical and Electronic Engineering Association (IEEE) of the form of raw data file.It should be noted that exemplarily, the reference pattern of light shield shown in Fig. 2 is only schematic construction.
Meanwhile, those skilled in the art can set according to the instruction of the application the method revised above-mentioned original figure.In a preferred embodiment, the step revising original figure comprises: correspond to the part of SEM figure in intercepting original figure as initial reference figure; The round and smooth process in corner and profile are carried out to initial reference figure and takes out limit process, to obtain middle reference figure; Amplification process is carried out, to obtain the reference pattern mated with the size of SEM figure to middle reference pattern.It should be noted that the method revised original figure can also be additive method, and be only limitted to this preferred implementation.
In the above-mentioned preferred implementation revised original figure, raw data file can be deposited in worktable window system.Now, in the step obtaining original figure, can open and deposit in worktable window system raw data file to obtain original figure; In the step obtaining middle reference figure, worktable window system can be adopted automatically to carry out the round and smooth process in corner to initial reference figure and profile takes out limit process, to obtain middle reference figure.
In the step obtaining above-mentioned initial reference figure, part original figure can be intercepted as initial reference figure.Preferably, intercepting the length of side is that the original figure of 2 ~ 4 μm is as initial reference figure.When needs are repaired whole light shield, can the restorative procedure that provides of multiple exercise the application, and repeatedly in repair process intercept part original figure summation cover all original figures.
Obtain in the step of above-mentioned middle reference figure, the round and smooth process in corner and profile are taken out limit process and automatically can be completed by worktable window system.Preferably, the step obtaining middle reference figure comprises: adopt worktable window system to carry out the round and smooth process in corner to reference pattern, become fillet to make the vertical edges dihedral of initial reference figure; Adopt worktable window system to carry out profile to the initial reference figure after the round and smooth process in corner and take out limit process, to obtain the graph outline of the initial reference figure after the round and smooth process in corner, and using graph outline as middle reference figure.
It should be noted that those skilled in the art has the ability according to the instruction of the application, setting adopt worktable window system to carry out parameter that the round and smooth process in above-mentioned corner and profile take out limit process.Such as, the round and smooth degree in corner can define according to round and smooth degree (i.e. the size of fillet, the number of degrees are more large close to circle), and the degree that those skilled in the art can be round and smooth according to the size adjustment corner of setting fillet.
The object of above-mentioned middle reference figure being carried out amplifying to process obtains the reference pattern mated with the size of SEM figure, so that contrast with reference to figure and SEM figure, and is convenient to the position of the defect of locating in light shield.The multiple amplifying process can set according to the size between middle reference figure and reference pattern, and those skilled in the art has the ability to amplify according to the instruction setting of the application the multiple processed.
Complete open light shield raw data file to obtain the original figure of light shield, and by revising original figure with after the step obtaining the reference pattern of light shield, adopt scanning machine to scan part light shield, to obtain the SEM figure of light shield, its structure as shown in Figure 3.Wherein, scanning machine can be CDSEM, can also be other imaging devices certainly.Adopt the method for operating of scanning machine acquisition SEM figure and operating parameter (such as vacuum tightness, imaging multiplying power etc.) can set according to prior art.It should be noted that exemplarily, the SEM figure of light shield shown in Fig. 3 is only schematic construction.
Meanwhile, owing to containing defectiveness in light shield, the above-mentioned SEM figure therefore adopting scanning machine to obtain is also containing defective part (needing the part of reparation).In the subsequent step of the restorative procedure provided in the application, by the position by contrasting the defect of locating in light shield to reference pattern and SEM figure, and then repair the defect in light shield.
Complete and adopt scanning machine to scan part light shield, after the step of SEM figure obtaining light shield, contrast with reference to figure and SEM figure, to locate the position of the defect in light shield, its basal body structure as shown in Figure 4.In this step, can by SEM graph copying in worktable window system, so that contrast with reference to figure and SEM figure.
The method of the position of the defect in the light shield of above-mentioned location can set according to prior art.In a preferred embodiment, the step of locating the position of the defect in light shield comprises: superpose with reference to figure and SEM figure, so that contrast with reference to figure and SEM figure; Contrast reference pattern and SEM figure are to find out the defect in light shield; Obtain the position coordinates of the defect in light shield, to locate the position of the defect in light shield.The mode of contrast reference pattern and SEM figure can detect automatically for visual inspection or defect, or the combination of these two kinds of modes.
Complete and contrast with reference to figure and SEM figure, after the step of locating the position of the defect in light shield, repair the defect in light shield, and then obtain the light shield of structure as shown in Figure 5.Defect in light shield is generally the defect with depressed part or teat, therefore by filling the mode of depressed part or removal teat, can realize the object of the defect of repairing in light shield.
Preferably, the method for filling above-mentioned depressed part is ionic reaction deposition, and the mode removing above-mentioned teat is focused ion beam bombardment.The technological parameter of focused ion beam bombardment or ionic reaction deposition can set according to prior art, does not repeat them here.Certainly, the mode of filling depressed part or removal teat has a variety of, is not limited in this preferred implementation.
Meanwhile, present invention also provides a kind of light shield, this light shield forms through the defect-restoration method therefor reparation that the application is above-mentioned.Defect in this light shield is repaired, thus decreases the pattern error in light shield, and then improves the accuracy of the position adopting this light shield definition circuit figure, finally improves the performance of formed device.
As can be seen from the above description, the application's the above embodiments achieve following technique effect:
(1) by opening the raw data file of light shield to obtain the original figure of light shield, and by revising original figure to obtain the reference pattern of light shield, then the SEM figure with reference to figure and light shield carries out the position contrasting the defect of locating in light shield, thus achieves the object of the defect of repairing in light shield.
(2) the method obtains the reference pattern of light shield from the raw data file of light shield, and thus the method can obtain the reference pattern of any light shield, thus solves the problem being difficult to find reference pattern in the defect-restoration method therefor of light shield.
(3) the method is also passed through SEM graph copying in worktable window system, and contrasted by automatic reference pattern and described SEM figure, thus the defective locations obtained more accurately in light shield, and then improve the accuracy of the defect repair in light shield.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection domain that all should be included in the application.
Claims (11)
1. a defect-restoration method therefor for light shield, is characterized in that, described defect-restoration method therefor comprises:
Open the raw data file of light shield to obtain the original figure of described light shield, and by revising described original figure to obtain the reference pattern of described light shield;
Scanning machine is adopted to scan the described light shield of part, to obtain the SEM figure of described light shield;
Described reference pattern and described SEM figure are contrasted, to locate the position of the defect in described light shield;
Repair the defect in described light shield.
2. defect-restoration method therefor according to claim 1, is characterized in that, the step revising described original figure comprises:
Intercept in described original figure and correspond to the part of described SEM figure as initial reference figure;
The round and smooth process in corner and profile are carried out to described initial reference figure and takes out limit process, to obtain middle reference figure;
Amplification process is carried out, to obtain the described reference pattern mated with described SEM dimension of picture to described middle reference figure.
3. defect-restoration method therefor according to claim 2, is characterized in that, obtains in the step of described original figure, opens and deposits in described raw data file in worktable window system to obtain described original figure.
4. defect-restoration method therefor according to claim 2, is characterized in that, obtains in the step of described initial reference figure, and intercepting the length of side is that the described original figure of 2 ~ 4 μm is as described initial reference figure.
5. defect-restoration method therefor according to claim 3, it is characterized in that, obtain in the step of described middle reference figure, adopt described worktable window system automatically to carry out the round and smooth process in corner and profile to described initial reference figure and take out limit process, to obtain described middle reference figure.
6. defect-restoration method therefor according to claim 5, is characterized in that, the step obtaining described middle reference figure comprises:
Adopt described worktable window system to carry out the round and smooth process in corner to described reference pattern, become fillet to make the vertical edges dihedral of described initial reference figure;
Adopt described worktable window system to carry out profile to the described initial reference figure after the round and smooth process in described corner and take out limit process, to obtain the graph outline of the described initial reference figure after the round and smooth process in described corner, and using described graph outline as described middle reference figure.
7. defect-restoration method therefor according to claim 3, it is characterized in that, location described light shield in defect position step in, by described SEM graph copying to described worktable window system so that described reference pattern and described SEM figure are contrasted.
8. defect-restoration method therefor according to claim 7, is characterized in that, the step of locating the position of the defect in described light shield comprises:
Described reference pattern and described SEM figure are superposed;
Contrast described reference pattern and described SEM figure to find out the defect in described light shield;
Obtain the position coordinates of the defect in described light shield, to locate the position of the defect in described light shield.
9. defect-restoration method therefor according to any one of claim 1 to 8, is characterized in that, the method for repairing the defect in described light shield is focused ion beam bombardment or ionic reaction deposition.
10. defect-restoration method therefor according to any one of claim 1 to 8, is characterized in that, described raw data file is GDS file.
11. 1 kinds of light shields, is characterized in that, described light shield forms through the defect-restoration method therefor reparation according to any one of claim 1 to 10.
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| CN201410542511.6A CN105511222B (en) | 2014-10-14 | 2014-10-14 | The defect-restoration method therefor and light shield of light shield |
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| CN201410542511.6A CN105511222B (en) | 2014-10-14 | 2014-10-14 | The defect-restoration method therefor and light shield of light shield |
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| CN106371284A (en) * | 2016-11-30 | 2017-02-01 | 上海华力微电子有限公司 | Graphic photomask contact hole defect detection method |
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| CN108257166A (en) * | 2018-01-11 | 2018-07-06 | 上海华虹宏力半导体制造有限公司 | The emulating image of domain and the method for silicon chip SEM image Auto-matching |
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| CN110727170A (en) * | 2018-07-16 | 2020-01-24 | 中芯国际集成电路制造(上海)有限公司 | Photomask defect repairing method and photomask |
| CN111539955A (en) * | 2020-05-28 | 2020-08-14 | 上海华力集成电路制造有限公司 | Defect detection method |
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| CN116758073A (en) * | 2023-08-17 | 2023-09-15 | 粤芯半导体技术股份有限公司 | Mask plate data detection method and system |
| TWI826978B (en) * | 2021-03-26 | 2023-12-21 | 德商卡爾蔡司Ｓｍｔ有限公司 | Method, device and computer program for repairing a mask defect |
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| CN107703715A (en) * | 2016-08-08 | 2018-02-16 | 中芯国际集成电路制造(上海)有限公司 | A kind of restorative procedure of mask pattern defect |
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| CN110727170A (en) * | 2018-07-16 | 2020-01-24 | 中芯国际集成电路制造(上海)有限公司 | Photomask defect repairing method and photomask |
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| CN112764307A (en) * | 2019-11-06 | 2021-05-07 | 长鑫存储技术有限公司 | Optical proximity effect correction method |
| CN111539955A (en) * | 2020-05-28 | 2020-08-14 | 上海华力集成电路制造有限公司 | Defect detection method |
| TWI826978B (en) * | 2021-03-26 | 2023-12-21 | 德商卡爾蔡司Ｓｍｔ有限公司 | Method, device and computer program for repairing a mask defect |
| CN116758073A (en) * | 2023-08-17 | 2023-09-15 | 粤芯半导体技术股份有限公司 | Mask plate data detection method and system |
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