CN110488568B - Method for repairing defects of photomask and photomask - Google Patents
Method for repairing defects of photomask and photomask Download PDFInfo
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- CN110488568B CN110488568B CN201810457978.9A CN201810457978A CN110488568B CN 110488568 B CN110488568 B CN 110488568B CN 201810457978 A CN201810457978 A CN 201810457978A CN 110488568 B CN110488568 B CN 110488568B
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- 230000007547 defect Effects 0.000 title claims abstract description 135
- 238000000034 method Methods 0.000 title claims abstract description 69
- 230000008439 repair process Effects 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 14
- 238000003384 imaging method Methods 0.000 claims description 11
- RXCXTWLPFKKEMF-UHFFFAOYSA-H chromium(6+);hexahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Cr+6] RXCXTWLPFKKEMF-UHFFFAOYSA-H 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 7
- 230000002950 deficient Effects 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 6
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- 230000008569 process Effects 0.000 abstract description 7
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- 238000013461 design Methods 0.000 description 12
- 239000011651 chromium Substances 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000001795 light effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- JZDKETLGZNAINJ-UHFFFAOYSA-H [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mo+6] Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mo+6] JZDKETLGZNAINJ-UHFFFAOYSA-H 0.000 description 2
- SSLSOHVYTNAFRT-UHFFFAOYSA-H [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[W+6] Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[W+6] SSLSOHVYTNAFRT-UHFFFAOYSA-H 0.000 description 2
- -1 but not limited to Substances 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention provides a defect repairing method of a photomask and the photomask, wherein the method comprises the following steps: providing a photomask to be repaired, wherein the photomask to be repaired comprises a shading layer and a light-transmitting pattern formed in the shading layer, and the light-transmitting pattern comprises a pattern to be repaired with defects; and forming a scattering pattern on a portion of the light shielding layer adjacent to the defect. The method disclosed by the invention is easier to control the process, can remedy the challenging defect with small size, can not damage the normal pattern on the photomask, can improve the repair qualification rate, and reduces the repair cycle times.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a defect repairing method of a photomask and the photomask.
Background
In the fabrication of semiconductor integrated circuits, it is necessary to define the positions of circuit patterns using a Mask (Mask), and then to photolithography the projected circuit patterns by a photolithography machine to form desired devices on a semiconductor substrate. The method of forming a photomask generally includes the following steps: firstly, data preparation is performed, for example, size data of a circuit pattern to be formed is prepared, then, a shading layer (for example, metal chromium) and a photoresist are sequentially formed on a substrate (for example, quartz glass), the designed circuit pattern is exposed on the photoresist through an electronic laser device, the photoresist is used as a mask, the shading layer is etched to form the circuit pattern, and then, registration (registration), critical dimension Measurement (CD Measurement), defect detection (Defect Inspection), defect repair, cleaning and installation, particle inspection (Particle Inspection), a photomask protective film (Thr-Pellicle) is formed, final inspection and packaging, final shipment (Shipping) and the like are performed, and the preparation of the photomask is realized through the steps.
However, the mask making process is prone to introducing defects in the resulting mask that result in errors in the pattern in the mask, such as missize defects (mis-size defects), and therefore repair of defects on the mask is required to reduce the pattern errors in the mask and obtain a mask that is as desired for the design. At present, two repairing methods are generally adopted for repairing, one is to etch a part of opaque area (namely a shading layer) so as to enable the repaired graph to accord with the design; another method is to repair the pattern with larger size by depositing a light shielding layer on a part of the light transmission area so that the repaired pattern accords with the design. However, the above repair method sometimes cannot repair some defects of wrong size (particularly defects of smaller size than the normal size) by etching the opaque region, so that the current repair method has a high risk of repair failure.
In view of the above, there is a need for a new method for repairing defects of a photomask and a photomask.
Disclosure of Invention
In the summary, a series of concepts in a simplified form are introduced, which will be further described in detail in the detailed description. The summary of the invention is not intended to define the key features and essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
In view of the problems existing at present, an aspect of the present invention provides a method for repairing a defect of a photomask, including:
providing a photomask to be repaired, wherein the photomask to be repaired comprises a shading layer and a light-transmitting pattern formed in the shading layer, and the light-transmitting pattern comprises a pattern to be repaired with defects;
and forming a scattering pattern on a portion of the light shielding layer adjacent to the defect.
Illustratively, the scattering pattern is annular about the defect.
Illustratively, the pattern to be repaired is square, and the defect covers part of the pattern to be repaired, and then the scattering pattern is square ring-shaped around the defect.
Illustratively, the defining method of the pattern to be repaired with the defect comprises the following steps:
and performing simulation detection of wafer exposure on the photomask to be repaired by using a space image measurement system so as to expect the imaging degree of the photomask defect on the wafer, and defining the defective pattern with the imaging degree lower than a target value as the defective pattern to be repaired.
Illustratively, the photomask to be repaired comprises a light-transmitting substrate and a shading layer covering the light-transmitting substrate, and the defect is surface damage of part of the light-transmitting substrate in the pattern to be repaired.
Illustratively, the material of the scattering pattern comprises hexahydroxy chromium.
In yet another aspect, the present invention provides a photomask, comprising:
a light shielding layer and a light transmission pattern formed in the light shielding layer, the light transmission pattern including a pattern to be repaired having a defect;
a scattering pattern is formed on a portion of the light shielding layer adjacent to the defect.
Illustratively, the scattering pattern is annular about the defect.
Illustratively, the pattern to be repaired is square, and the defect covers part of the pattern to be repaired, and then the scattering pattern is square ring-shaped around the defect.
Illustratively, the material of the scattering pattern comprises hexahydroxy chromium.
According to the method for repairing the defects of the photomask and the photomask, disclosed by the embodiment of the invention, the light effect of a local area is changed by forming the scattering pattern on the part of the shading layer adjacent to the defects, so that the photomask with the defects is repaired, the photomask meeting the design requirements is obtained, the process of the method is easier to control, the small-size challenging defects can be remedied, the normal patterns on the photomask cannot be damaged, the repair qualification rate can be improved, and the repair cycle times can be reduced.
Drawings
The following drawings are included to provide an understanding of the invention and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and their description to explain the principles of the invention.
In the accompanying drawings:
FIG. 1 is a flow chart of a conventional photomask manufacturing process;
FIG. 2A is a schematic diagram showing repair of defects by etching in a conventional repair method;
FIG. 2B shows a schematic diagram of repairing defects by deposition in a conventional repair method;
FIG. 3 is a schematic diagram showing test results after repairing defects by etching in a conventional method;
FIG. 4 is a schematic diagram of a current mask pattern defect;
FIGS. 5A to 5B are schematic views showing a sequential execution of a defect repair method according to an embodiment of the present invention, wherein the left view is a schematic top view and the right view is a schematic cross-sectional view;
FIG. 6 is a graph showing comparison of test results before and after repair according to the defect repair method of the present invention;
FIG. 7 is a schematic diagram showing the results of a repeatability test after repairing a defect according to the defect repairing method of the present invention;
FIG. 8 is a flow chart of a method for repairing defects in a photomask according to one embodiment of the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced without one or more of these details. In other instances, well-known features have not been described in detail in order to avoid obscuring the invention.
It should be understood that the present invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size of layers and regions, as well as the relative sizes, may be exaggerated for clarity. Like numbers refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatially relative terms, such as "under," "below," "beneath," "under," "above," "over," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below" and "under" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention. In this way, variations from the illustrated shape due to, for example, manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present invention should not be limited to the particular shapes of the regions illustrated herein, but rather include deviations in shapes that result, for example, from manufacturing. For example, an implanted region shown as a rectangle typically has rounded or curved features and/or implant concentration gradients at its edges rather than a binary change from implanted to non-implanted regions. Also, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface over which the implantation is performed. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present invention.
In order to provide a thorough understanding of the present invention, detailed steps and structures will be presented in the following description in order to illustrate the technical solution presented by the present invention. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments in addition to these detailed descriptions.
At present, a pattern contrast method is generally adopted to repair defects in a photomask to be repaired. The repairing method comprises the following steps: firstly, obtaining SEM patterns of a normal photomask (a photomask without defects) or other normal areas in the photomask to be repaired, and taking the SEM patterns as reference patterns; then, scanning the photomask to be repaired by adopting a scanning machine to obtain an SEM image of the photomask to be repaired; next, comparing the reference pattern with an SEM pattern of the photomask to be repaired to determine the defect position in the photomask to be repaired, and further determining the position to be repaired; and finally, repairing the defects in the photomask to be repaired.
At present, two repairing methods are generally adopted to repair, one is to etch a part of opaque area (namely a shading layer) so that the repaired graph accords with the design, as shown in the right diagram in fig. 2A; another method is to repair the pattern with larger size by depositing a light shielding layer on a part of the light-transmitting area, so that the repaired pattern conforms to the design, as shown in fig. 2B. However, in some cases, the above repair method cannot repair some defects with wrong dimensions (particularly defects with dimensions smaller than the normal dimensions) by etching the opaque region, so that the risk of repair failure in the current repair method is high, as shown in fig. 3, a part of the transparent region of the pattern located in the center is covered by a contaminant (such as particles) before repair, the defect is repaired by etching it, and then, after the repaired photomask is detected by the aerial image measurement system AIMS (Aerial Image Measurement System), it is found that the test result after repair is lower than the standard value, and thus the repair fails. However, there are many defects that need to be repaired by etching process, such as an invasive defect (invasive defect), as shown in fig. 4, the invasive defect usually extends to the inside of the transparent region of the mask pattern, so that part of the transparent region is covered, thereby affecting the light transmittance, and making the mask pattern not meet the design requirements.
Therefore, in view of the foregoing technical problems, the present invention provides a method for repairing a defect of a photomask, as shown in fig. 8, which mainly includes the following steps:
step S1, providing a photomask to be repaired, wherein the photomask to be repaired comprises a shading layer and a light-transmitting pattern formed in the shading layer, and the light-transmitting pattern comprises a pattern to be repaired with defects;
and S2, forming a scattering pattern on a part of the shading layer adjacent to the defect.
According to the method for repairing the defects of the photomask and the photomask, disclosed by the embodiment of the invention, the light effect of a local area is changed by forming the scattering pattern on the part of the shading layer adjacent to the defects, so that the photomask with the defects is repaired, the photomask meeting the design requirements is obtained, the process of the method is easier to control, the small-size challenging defects can be remedied, the normal patterns on the photomask cannot be damaged, the repair qualification rate can be improved, and the repair cycle times can be reduced.
Next, a detailed description will be given of a defect repair method for a photomask according to the present invention with reference to fig. 5A to 5B, wherein fig. 5A to 5B illustrate schematic diagrams obtained by sequentially performing the defect repair method according to an embodiment of the present invention, and a left side view is a schematic top view and a right side view is a schematic cross-sectional view.
Illustratively, the method for repairing a defect of a photomask of the present invention comprises the steps of:
first, as shown in fig. 5A, a photomask 10 to be repaired is provided, where the photomask 10 to be repaired includes a light shielding layer 101 and a light-transmitting pattern formed in the light shielding layer 101, and the light-transmitting pattern includes a pattern 102 to be repaired having a defect 103.
In one example, the photomask to be repaired 10 includes a light-transmitting substrate 100, and a light-shielding layer 101 covering the light-transmitting substrate 100.
Wherein the light transmissive substrate 100 may be any suitable light transmissive substrate including, but not limited to, a quartz substrate. The light shielding layer 101 may be any suitable material having light shielding, such as a metal material including, but not limited to, chromium (Cr), and illustratively, an oxide (not shown), such as chromium oxide, may be selectively formed on the surface of the light shielding layer.
Specifically, the preparation of the resulting photomask may be accomplished by any suitable method known to those skilled in the art, and in one example, the method of preparing the photomask includes: providing a light-transmitting substrate 100, such as fused silica, forming a light-shielding layer 101, such as a chromium layer, on the surface of the light-transmitting substrate, and spin-coating an electron beam photoresist on the light-shielding layer 101; thereafter, the predetermined formed mask pattern is transferred to the e-beam photoresist layer using an e-beam (or laser) direct writing technique. The electron source generates a plurality of electrons, the electrons are accelerated and focused to form and project onto the electron beam photoresist, and the electrons are scanned to form a required pattern; exposing, developing, and wet or dry etching to remove part of the light shielding layer 101 to expose the transparent substrate 100 to form a transparent pattern; the electron beam photoresist is removed.
The mask making process is prone to introducing defects in the resulting mask that result in errors in the pattern in the mask, such as missize defects (mis-size defects), and therefore repair of defects on the mask is required to reduce the pattern errors in the mask and obtain a mask that is acceptable for design.
In the embodiment of the invention, before repairing the photomask, the photomask with defects can be detected by detecting the photomask, and the photomask with defects can be selected as the photomask to be repaired, and any detection method known by a person skilled in the art can be used for detecting the photomask.
In one example, a method for defining a pattern to be repaired having a defect includes: the method comprises the steps of performing simulation detection of wafer exposure on a photomask to be repaired by using a space image measuring system, so as to expect the imaging degree of the photomask defect on the wafer, defining a defective pattern with the imaging degree lower than a target value as the defective pattern to be repaired, namely, a pattern needing to be repaired by using the defect repairing method, wherein the target value can be any proper value meeting the regulations, the target value is set according to the technological requirements of users, for example, the target value is 90 percent at the minimum, and once the simulated imaging degree is lower than 90 percent, the defective pattern to be repaired needs to be repaired.
In one example, the location of the defect may be determined by testing the mask to be repaired, for example, first, an SEM image of a normal mask (a mask without defects) or other normal areas in the mask to be repaired is obtained, and this SEM image is taken as a reference image; then, scanning the photomask to be repaired by adopting a scanning machine to obtain an SEM image of the photomask to be repaired; next, the reference pattern is compared with the SEM pattern of the mask to be repaired to determine the location of the defect in the mask to be repaired.
In one example, as shown in fig. 5A, the defect 103 is a surface damage of a part of the transparent substrate in the pattern 102 to be repaired, such as Quartz damage (Quartz damage), which may cause a decrease in light transmittance of the transparent substrate, and the result of the AIMS test is that the energy intensity is lower than that of the normal part, thereby affecting the imaging quality of the photomask, and thus repair is required.
It should be noted that, in the present embodiment, the defect repairing method of the present invention is mainly explained and illustrated by taking the above defect as an example, but the defect repairing method of the present invention is applicable to not only the above defect but also other defects, such as an invasive defect, particularly an invasive defect below the 28nm node.
Next, as shown in fig. 5B, a scattering pattern 104 is formed on the portion of the light shielding layer 101 adjacent to the defect 103.
Specifically, the arrangement mode of the scattering pattern 104 may be set reasonably according to the actual pattern to be repaired and the position of the defect, but it is ensured that the scattering pattern 104 is disposed on the portion of the light shielding layer 101 adjacent to the defect 103 to optically compensate the pattern having the defect.
In one example, the scattering pattern 104 is annular around the defect 103, for example, the pattern to be repaired 102 is square, and the defect 103 covers a part of the pattern to be repaired 102, so that the scattering pattern 104 is square annular around the defect 103.
It should be noted that, for other irregular patterns, a scattering pattern such as a stripe shape or a semi-ring shape may be disposed adjacent to the defect according to the position of the defect, which is not particularly limited herein.
The material of the scattering pattern 104 may be any material capable of compensating light, for example, the material of the scattering pattern includes hexahydroxy chromium (Cr (OH) 6 ) Or hexahydroxymolybdenum, or hexahydroxytungsten, and the like. Preferably, the material of the scattering pattern 104 includes hexahydroxy chromium (Cr (OH) 6 )。
The scattering pattern may be formed using any deposition method, such as sputtering or evaporation.
It should be noted that the arrangement of the scattering pattern also meets the design rule, so as to avoid the influence on other adjacent normal patterns caused by the excessive coverage of the light shielding layer.
The defect is repaired by the repair method of the photomask of the invention, before the defect shown in fig. 5A is repaired, the detection result is found to be about 98.3% by using an AIMS simulation imaging test, as shown in the left graph of fig. 6, and is lower than the target value of 100%, while after the defect is repaired by using the method shown in fig. 5B, the detection result is found to be 103.8% by using an AIMS simulation imaging test, as shown in the right graph of fig. 6, so that the AIMS result of a light-transmitting pattern area (i.e. a clear pattern area) can be increased by depositing a scattering pattern on the light-shielding layer, which is generally called as "blocking light" (to indicate that the method successfully repairs the photomask defect, and the photomask pattern meets the design requirement. In addition, the repairing method has good repeatability through repeated tests, and the defect repairing success rate is high, as shown in fig. 7.
The description of the key steps of the method for repairing a defect of a photomask of the present invention is completed, and other steps may be included in the complete method, which is not described herein.
In summary, according to the method for repairing the defects of the photomask and the photomask provided by the embodiment of the invention, the scattering pattern is formed on the part of the shading layer adjacent to the defects, so that the light effect of a local area is changed, the light compensation of the pattern to be repaired is realized, the photomask with the defects is repaired, the photomask meeting the design requirement is obtained, the process of the method is easier to control, the small-size challenging defects can be remedied, the normal pattern on the photomask cannot be damaged, the repair qualification rate can be improved, and the repair cycle times can be reduced. The method adopts a deposition mode to replace etching repair, and avoids the problem of high repair failure risk caused by conventional etching method repair.
Example two
The invention also provides a photomask obtained by repairing the method in the first embodiment. The mask is explained and explained with reference to fig. 5B.
In one example, the mask includes a light shielding layer 101 and a light transmitting pattern formed in the light shielding layer 101, the light transmitting pattern including a pattern to be repaired 102 having a defect 103.
In one example, the mask includes a light-transmitting substrate 100, and a light-shielding layer 101 covering the light-transmitting substrate 100.
Wherein the light transmissive substrate 100 may be any suitable light transmissive substrate including, but not limited to, a quartz substrate. The light shielding layer 101 may be any suitable material having light shielding, such as a metal material including, but not limited to, chromium (Cr), and illustratively, an oxide (not shown), such as chromium oxide, may be selectively formed on the surface of the light shielding layer.
The light-transmitting pattern is a pattern penetrating the light-shielding layer 101 to expose a portion of the light-transmitting substrate.
In one example, the defect 103 is a surface damage of a portion of the transparent substrate in the pattern 102 to be repaired, such as Quartz damage (Quartz damage), which may cause the transmittance of the transparent substrate to be reduced, thereby affecting the imaging quality of the photomask, and thus requires repair.
It should be noted that, in the present embodiment, the defect repairing method of the present invention is mainly explained and illustrated by taking the above defect as an example, but the defect repairing method of the present invention is applicable to not only the above defect but also other defects, such as an invasive defect, particularly an invasive defect below the 28nm node.
In one example, a scattering pattern 104 is formed on a portion of the light shielding layer 101 adjacent to the defect 103.
In one example, the scattering pattern 104 is annular around the defect 103, for example, the pattern to be repaired 102 is square, and the defect 103 covers a part of the pattern to be repaired 102, so that the scattering pattern 104 is square annular around the defect 103.
It should be noted that, for other irregular patterns, a scattering pattern such as a stripe shape or a semi-ring shape may be disposed adjacent to the defect according to the position of the defect, which is not particularly limited herein.
The material of the scattering pattern 104 may be any material capable of compensating light, for example, the material of the scattering pattern includes hexahydroxy chromium (Cr (OH) 6 ) Or hexahydroxymolybdenum, or hexahydroxytungsten, and the like. Preferably, the material of the scattering pattern 104 includes hexahydroxy chromium (Cr (OH) 6 )。
Thus far, the description of the mask of the present invention has been completed, and other components or patterns may be included in the complete mask, which is not described in detail herein.
Since the photomask is repaired by the method of the first embodiment, the same advantages as those of the first embodiment are obtained.
The present invention has been illustrated by the above-described embodiments, but it should be understood that the above-described embodiments are for purposes of illustration and description only and are not intended to limit the invention to the embodiments described. In addition, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications are possible in light of the teachings of the invention, which variations and modifications are within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (7)
1. A method for repairing a defect in a photomask, comprising:
providing a photomask to be repaired, wherein the photomask to be repaired comprises a shading layer and a light transmission pattern formed in the shading layer, the light transmission pattern comprises a pattern to be repaired with defects, and the defining method of the pattern to be repaired with defects comprises the following steps:
performing simulation detection of wafer exposure on a photomask to be repaired by using a space image measurement system so as to expect the imaging degree of the photomask defect on the wafer, and defining a defective pattern with the imaging degree lower than a target value as the defective pattern to be repaired;
and forming a scattering pattern on a part of the light shielding layer adjacent to the defect, wherein the scattering pattern is annular around the defect.
2. The defect repair method of claim 1, wherein the pattern to be repaired is square, and the scattering pattern is square-shaped around the defect while the defect covers a portion of the pattern to be repaired.
3. The method of claim 1, wherein the mask to be repaired comprises a light-transmitting substrate and a light-shielding layer covering the light-transmitting substrate, and the defect is a surface damage of a portion of the light-transmitting substrate in the pattern to be repaired.
4. The defect repair method of claim 1 wherein the material of the scattering pattern comprises hexahydroxy chromium.
5. A photomask, the photomask comprising:
a light shielding layer and a light transmission pattern formed in the light shielding layer, the light transmission pattern including a pattern to be repaired having a defect;
a scattering pattern is formed on a portion of the light shielding layer adjacent to the defect, the scattering pattern being annular around the defect.
6. The photomask of claim 5 wherein the pattern to be repaired is square and the scattering pattern is square-shaped around the defect covering a portion of the pattern to be repaired.
7. The mask of claim 5 wherein the material of the scattering pattern comprises hexahydroxy chromium.
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| CN201810457978.9A CN110488568B (en) | 2018-05-14 | 2018-05-14 | Method for repairing defects of photomask and photomask |
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| CN201810457978.9A CN110488568B (en) | 2018-05-14 | 2018-05-14 | Method for repairing defects of photomask and photomask |
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| CN110488568B true CN110488568B (en) | 2023-12-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW472172B (en) * | 2001-05-23 | 2002-01-11 | Taiwan Semiconductor Mfg | Method to repair the attenuated phase shift mask by optical proximity effect correction technology |
| TW554413B (en) * | 2002-08-02 | 2003-09-21 | Taiwan Semiconductor Mfg | Method for repairing mask |
| US6660436B1 (en) * | 2001-09-17 | 2003-12-09 | Taiwan Semiconductor Manufacturing Company | OPC-like repair method for attenuated phase shift masks |
| TW587202B (en) * | 2003-01-15 | 2004-05-11 | Taiwan Semiconductor Mfg | Method of repairing attenuate phase shift mask |
| CN106569387A (en) * | 2015-10-09 | 2017-04-19 | 中芯国际集成电路制造(北京)有限公司 | Mask and repair method thereof |
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2018
- 2018-05-14 CN CN201810457978.9A patent/CN110488568B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW472172B (en) * | 2001-05-23 | 2002-01-11 | Taiwan Semiconductor Mfg | Method to repair the attenuated phase shift mask by optical proximity effect correction technology |
| US6660436B1 (en) * | 2001-09-17 | 2003-12-09 | Taiwan Semiconductor Manufacturing Company | OPC-like repair method for attenuated phase shift masks |
| TW554413B (en) * | 2002-08-02 | 2003-09-21 | Taiwan Semiconductor Mfg | Method for repairing mask |
| TW587202B (en) * | 2003-01-15 | 2004-05-11 | Taiwan Semiconductor Mfg | Method of repairing attenuate phase shift mask |
| CN106569387A (en) * | 2015-10-09 | 2017-04-19 | 中芯国际集成电路制造(北京)有限公司 | Mask and repair method thereof |
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| CN110488568A (en) | 2019-11-22 |
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