554413 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（) 發明領域： 本發明係有關於光罩修補方法，特別是有關於修補光 罩令不透光區以及散條（SeatteHng㈣圖案的光罩修補方 法0 發明背景： 一般而言，光罩的主體大多係由例如石英之平坦透光 的玻璃絕緣材質所構成的。而光罩之製造係在上述之基材 上彼覆沉積厚度約數百A，例如鉻（C0之不透光薄膜，接著 形成層光阻覆蓋此不透光薄膜，再例如以電子束之高解 析度的曝光技術曝光，並經顯影以在光阻上形成所需之積 體電路70件各層的圖案，然後以蝕刻方式將此圖案轉移到 不透光薄膜’而在光罩上形成透光區域與不透光區域，甚 至在鉻膜的表面再加上一層厚度約200A的二氧化鉻膜以 防止金屬鉻膜在曝光時的反射。請參照第1圖，第1圖所 繪示為一般光罩之示意圖。其中，光罩1〇具有透光區域與 不透光區域，代表透光區域之數個透光區18係由光罩主體 之透光玻璃絕緣材質所構成，另外，不透光區域之不透光 區12、不透光區14與不透光區16係由不透光材料（如鉻 膜），或者相移材料（如鉬矽氧氮化物）所構成。 然而，在光罩的製造過程時，無法形成完美無缺之光 罩，或者，使用時不小心而會造成光罩上圖案的受損，因 此在進行圖案複製之微影製程時，需先進行光罩缺陷修 補。光罩受損而造成的缺陷有兩種，例如由於鉻膜或相移 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ------- .............MW.........訂.........Φ (請先閲讀背面之注意事項再場寫本頁) 554413 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（） 層形成圖案之誤差’使原本應為不透光區的部分形成透光 區，而造成透光缺陷（Clear Defect);或者，由於塗佈過多 的鉻膜而使原本應為透光區的部分形成不透光區，而造成 不透光缺陷（Opaque Defect)。 一般所使用之光罩修補技術例如有雷射光束（Laser554413 Printed by A7 B7, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Field of the invention: The present invention relates to the method of repairing photomasks, in particular to repairing photomasks to prevent opaque areas and loose strips (SeatteHng㈣ pattern) Photomask repair method 0 Background of the invention: Generally speaking, the main body of a photomask is mostly composed of a flat and transparent glass insulating material such as quartz. The manufacture of the photomask is based on the thickness of the substrate About several hundred A, such as chromium (C0 opaque film, and then a layer of photoresist is formed to cover the opaque film, and then exposed by, for example, high-resolution electron beam exposure technology, and developed to form on the photoresist The pattern of 70 layers of the required integrated circuit, and then this pattern is transferred to the opaque film by etching to form a light-transmitting area and an opaque area on the photomask, and even add the surface of the chrome film A layer of chromium dioxide film with a thickness of about 200A to prevent reflection of the metal chromium film during exposure. Please refer to FIG. 1, which is a schematic diagram of a general photomask. Among them, the photomask 10 has a light transmitting area The areas and opaque areas, the light-transmitting areas 18 representing the light-transmitting areas are composed of the transparent glass insulation material of the mask body. In addition, the opaque areas 12 and 14 of the opaque areas The opaque area 16 is composed of an opaque material (such as a chromium film) or a phase shifting material (such as molybdenum silicon oxynitride). However, during the manufacturing process of the photomask, a perfect photomask cannot be formed. Or, careless use will cause damage to the pattern on the reticle. Therefore, during the photolithography process of pattern reproduction, reticle defect repair must be performed first. There are two types of defects caused by reticle damage, such as Due to the chrome film or phase shift, the size of this paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ------- ............. MW ... ... Order ......... Φ (Please read the notes on the back before writing this page) 554413 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The "error" causes the light-transmissive area to be formed in the part that should be the opaque area, which causes the light-transmitting defect (Clear Defect); or, due to excessive coating of chromium Film to form the opaque area of the part which should be the light-transmitting area, which will cause opaque defects. Generally used mask repair technology such as laser beam (Laser
Beam)、聚焦離子束（Focused Ion Beam ; FIB)、以及原子力 顯微鏡（AtomicForceMicroscopy)等。其中，由於雷射光之 解析度有限’且雷射燒蝕可能會移除與缺陷區域相鄰之不 透光薄膜，而傷害到光罩圖案。再加上，雷射光會傳遞大 量之熱能，不僅會溶解並蒸發不透光缺陷，亦會導致此不 透光缺陷之鄰近或下層的石英受到傷害而變粗糙，進而降 低石英之透光率及改變透射光之相位。因此，以雷射光束 進行光罩修補，會產生相當多的副作用，應用性不佳。另 外，由於聚焦離子光束之聚焦尺寸遠小於雷射光束，因此， 就修補準確度以及產量方面，聚焦離子束佔有極大優勢， 故聚焦離子束已成為廣為運用的一種光罩修補之技術。其 中’以聚焦離子束進行光罩修補時，可利用離子導入 (Beam-indued)之方式來沈積不透光的碳膜，例如聚苯乙烯 高分子，如此可修補透光缺陷。另外，可利用濺擊 (Sputtering Away)方式以去除多餘的鉻膜，如此可修補不透 光缺陷。 請參照第2圖，第2圖所繪示為一般光罩受損之示意 圖。其中，光罩10中係由於圖案形成誤差或鉻膜剝落的原 3 本紙張尺度適财國國家標準(CNS)^^(21Gx297公~—-- -」：:.......•裝.........訂.........· (請先閲讀背面之注意事項再場寫本頁) 經濟部智慧財產局員工消費合作社印製 554413 _ B7 --------------- 五、發明説明（） 因造成不透光區14與不透光區16的破損，而分別形成缺 陷20與缺陷22 °習知係利用光罩機台，在受損的缺陷μ 與缺陷2 2沈積不透光之有機膜，以進行透光缺陷的修補， 如第3圖所繪不。第3圖所繪示為利用習知修補方法修補 光罩之示意圖’其中’係在光罩1〇之不透光區14中形成 有機膜沈積之修補區域24,而在不透光區16中形成有機 膜沈積之修補區域2 6。 隨著電子元件之微小化趨勢，光罩的製作技術也越來 越進步’因此所製造出來的光罩圖案也越來越精細。其中， 光罩圖案中’用以修正單獨圖案及排列緻密圖案間之近接 效應（Proximity Effect)的散條，係位於所欲修正之側邊並 與之相隔一預設距離，且其尺寸通常小於所欲修正之圖 案，因此散條圖案同樣越來越細微。而且，由於散條圖案 相當細小，因此極易在光罩使用過程中產生缺損，而常需 予以修補。但是，隨著光罩圖案的日益縮小，光罩修補機 台卻沒有因此隨之升級，所以在修補細小圖案上的缺陷通 常會有沈積面積過大之有機膜的缺點。所以，通常在利用 沈積有機膜來修補光罩缺陷的步驟之後，必須再利用姓^ 製程將過多的有機膜去除，以製造與原來圖案相同之光罩 圖形。 發明目的及概述： 除了光罩製作技術越來越進步而使光罩圖案越來越精 細的情況外，習知利用再次蝕刻的修補方法，容易造成其 4 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) ......f........玎.......:# 6靖先閲讀背面之注意事項再填寫本頁) 554413 A7 、發明説明（） 他未受損的光罩區域因钱刻製 -修補材質係為有機膜與原先光罩“光= 卜’由於光罩 不相同，在經产咕 ™的金屬鉻膜並 (請先閲讀背面之注意事項再填寫本頁} 情形。 了此合易有修補區剝落的 蓉於上述之習知技術之缺點，因此，本發 的之一係提供一種朵置伖 之主要目 窖a 種光罩t補方法，可使用在圖宰杵穷沾上 罩修補製程中，更不合造“罢土…/圃案Ή的光 曰k成光罩未受知區受指·、士、l 韌落的情況。 又谓匕又禎或修補材料 本發明之另一目的係 方、、土 w 種非化學此積之光罩修補 為反摩氣I ί離子束並採㈣⑻2)或氣化氤（XeF2)等作 尤缺陷£域或掉落散條區的蝕因 有修補材料擴散以芬车丨^ t ± 除r不會 、 剝洛的情形產生外，更可獲得非透光 之修補圖案。 ％ 經濟部智慧財產局員工消費合作社印製 根據以上所述之目的，本發明更提供之一種光罩修補 法係用來修補具有第一不透光區與第一透光區之光 罩此光罩之第一透光區係由玻璃材質所構成，此光罩修 補方法包括·提供具有因第一不透光區受損而暴露出之第 透光區=光罩，其中上述之第一不透光區可例如為散條 圖案’且當第一不透光區為散條圖案時，散條圖案係位於 第一不透光區之一側，且散條圖案之尺寸小於第一不透光 區之尺寸，利用蝕刻步驟以去除一部分位於第二透光區之 玻璃材貝，藉以形成修補區域，並使第二透光區形成第二 '—--- 554413 A7 ---------B7^ 五、發明説明（） 不透光區。 上述本發明之光罩修補方法中，較佳的修補區域之寬 (請先閲讀背面之注意事項再填寫本頁) 度係為第二透光區之寬度的1/2至2/3，如此可使第二不透 光區之面積等於第二透光區之面積。另外，上述光罩之玻 璃材質可為石英，而光罩之不透光區可由鉻（Cr)或氧化絡 (CrO)所構成。上述所使用的蝕刻步驟，可利用一般用來修 補光罩中的聚焦離子束修補機台中所具有的钱刻步驟即 可此外，上述之蝕刻步驟的進行可採用例如溴或氟化氣 當作反應氣體，或者是利用非氣磨的方式來進行。 本發明之光罩修補方法，其特點在於使因不透光區受 損而暴露出的透光區之玻璃材質之光罩，利用非化學沉積 的方式之蝕刻步驟，來蝕刻位於透光區部分之破璃透光材 質，藉以形成修補區域，可使透光缺陷區形成另一不透光 區。 利用本發明之光罩修補方法，不僅製程控制度極佳， 而使關鍵尺寸獲得良好控制，更可防止習知再次蝕刻對光 罩造成的傷害，以及重複使用或清洗製程導致修補區域剝 落的缺點。 經濟部智慧財產局員工消費合作社印製 列 下 以 辅 中 字 ； 文 圖 明 ·，意 說 圖示 之 意之 後 示損 往 之受 於：罩罩 將中光光 例其般般 施，1 1 實述為為 佳闡示示 :較的繪繪 明的細所所 說明詳圖圖 單發更 1 2 簡本做第第 式形 圖 圖 本紙張尺度適用中國國木標準(CNS)A4規格(210X297公釐) 五、發明説明（ 第3圖所緣示為利用 意圖； 尤罩修補方法 第4 本發明 之圖案缺陷的示意圖；以及 /補方法修補光罩上 第5圖所繪示為利 上之缺落散條圖案的示意圖； I修補方法修補光罩 圖號對照說明： 修補光罩之示 經濟部智慧財產局員工消費合作社印製 光罩 不透光區 透光區 缺陷 修補區域 不透光區 不透光區 缺陷 修補區域 光罩 所需圖案 散條圖案 缺陷 修補區域 寬度 寬度 不透光區 不透光區 缺陷 修補區域 光罩 不透光區 透光區 缺陷 修補區域 透光區 散條圖案 缺陷 修補區域 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐)Beam), Focused Ion Beam (FIB), and atomic force microscope (AtomicForceMicroscopy). Among them, because the resolution of laser light is limited and laser ablation may remove the opaque film adjacent to the defect area, and damage the mask pattern. In addition, the laser light will transfer a large amount of thermal energy, which will not only dissolve and evaporate the opaque defects, but also cause the adjacent or underlying quartz of the opaque defects to be damaged and roughened, thereby reducing the transmittance and Change the phase of transmitted light. Therefore, repairing the mask with a laser beam has considerable side effects and is not applicable. In addition, since the focused ion beam has a much smaller focusing size than the laser beam, the focused ion beam has great advantages in terms of repair accuracy and yield. Therefore, the focused ion beam has become a widely used mask repair technique. Among them, when a mask repair is performed with a focused ion beam, a beam-indued method can be used to deposit a light-impermeable carbon film, such as a polystyrene polymer, so as to repair light-transmitting defects. In addition, Sputtering Away can be used to remove excess chromium film, which can repair opaque defects. Please refer to Figure 2. Figure 2 shows a schematic diagram of the damage of a general photomask. Among them, the photomask 10 is the original 3 paper size due to pattern formation errors or peeling of the chromium film (CNS) ^^ (21Gx297 public ~ -----":: ............ • Install ......... Order ......... (Please read the precautions on the back before writing this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 554413 _ B7- ------------- 5. Description of the invention () The defect 20 and defect 22 were formed respectively due to the damage of the opaque area 14 and the opaque area 16 ° The conventional system uses a photomask Machine, deposit opaque organic film on damaged defect μ and defect 22 to repair light-transmitting defects, as shown in Figure 3. Figure 3 shows repairing using conventional repair methods The schematic diagram of the photomask 'wherein' is an organic film deposition repair region 24 formed in the opaque region 14 of the photomask 10 and an organic film deposition repair region 26 is formed in the opaque region 16. With the electrons The miniaturization trend of components has made the manufacturing technology of photomasks more and more advanced, so the photomask patterns produced have become more and more sophisticated. Among them, the photomask patterns are used to correct individual patterns and alignment. Proximity Effect scatters between patterns are located on the side to be modified and separated from it by a preset distance, and their size is usually smaller than the pattern you want to modify, so the scatter pattern is also becoming more and more subtle . Moreover, because the scattered pattern is quite small, it is easy to produce defects during the use of the mask, and often needs to be repaired. However, with the shrinking of the mask pattern, the mask repair machine has not been upgraded accordingly. Therefore, when repairing defects on small patterns, there is usually the disadvantage of an organic film with an excessively large deposition area. Therefore, after the step of repairing a photomask defect by depositing an organic film, it is necessary to use the last name ^ process to remove excess organic films. In order to manufacture the same mask pattern as the original pattern. Purpose and summary of the invention: In addition to the situation that the mask making technology is getting more and more advanced and the mask pattern is getting more and more fine, it is easy to cause the repair method using re-etching. The 4 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) ... f ........ 玎 .......: # 6 Note (Please fill in this page again for the matters needing attention) 554413 A7, description of the invention () The area of his undamaged mask was engraved due to money-the repair material is organic film and the original mask "light = bu 'because the mask is not the same, Production of Gou ™ metal chrome film (Please read the precautions on the back before filling out this page} situation. In view of this, there are disadvantages of the above-mentioned conventional techniques in the repair of peeling off the repair area. Therefore, one of the issues of this issue is Provide a kind of mask repair method for the main cellars in the house, which can be used in the process of repairing the mask with the paint on the cover. It is even more unsuitable to "strike ..." The situation in the learned area was pointed, ·, and l. It is also called a dagger or a repairing material. Another object of the present invention is to repair the non-chemical masks of this product, which are anti-friction gas, I ion beams, and ㈣⑻2) or gasification X (XeF2). In particular, the erosion of the defect area or the scattered strip area is caused by the diffusion of the repairing material. In addition to the occurrence of r, the non-transparent repair pattern can be obtained. % Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs According to the above-mentioned purpose, the present invention further provides a mask repair method for repairing the light of the mask having the first opaque area and the first opaque area. The first light-transmitting area of the mask is made of glass material. This mask repair method includes: providing a first light-transmitting area = photomask that is exposed due to the first light-opaque area being damaged. The light-transmitting area may be, for example, a scatter pattern, and when the first opaque area is a scatter pattern, the scatter pattern is located on one side of the first opaque area, and the size of the scatter pattern is smaller than the first opacity. The size of the light area uses an etching step to remove a part of the glass material located in the second light-transmitting area, thereby forming a repair area and forming the second light-transmitting area to form a second '---- 554413 A7 ------ --- B7 ^ V. Description of the invention () Opaque area. In the above mask repair method of the present invention, the width of the preferred repair area (please read the precautions on the back before filling this page) is 1/2 to 2/3 of the width of the second light transmitting area, so The area of the second opaque region can be made equal to the area of the second opaque region. In addition, the glass material of the photomask may be quartz, and the opaque area of the photomask may be made of chromium (Cr) or oxide complex (CrO). The above-mentioned etching step can be performed by using the money engraving step commonly used in repairing a focused ion beam repairing machine in a photomask. In addition, the above-mentioned etching step can be performed using, for example, bromine or fluorinated gas as a reaction. Gas, or by non-air milling. The mask repair method of the present invention is characterized in that the mask made of glass material of the light-transmitting area exposed due to the damage of the light-opaque area is etched by a non-chemical deposition method to etch the portion located in the light-transmitting area. The broken glass transparent material is used to form a repaired area, so that the light-transmissive defect area can form another opaque area. By using the mask repair method of the present invention, not only the process control degree is excellent, but the key dimensions are well controlled, and the conventional mask can be prevented from damaging the mask again, and the defects of repeated repair or peeling caused by the repair process are peeled off. . Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, the following is supplemented by Chinese characters; Wen Tuming ·, which means that the meaning of the icon is shown to be affected by the following: the cover will be used as normal light, 1 1 real It is better to show: the more detailed detailed descriptions of the detailed descriptions are issued separately. 1 2 The simplified version is the first type drawing. The paper size is applicable to China National Wood Standard (CNS) A4 specifications (210X297). (5) Description of the invention (the margin in Figure 3 is shown as the intention to use; the mask repair method is a schematic diagram of the pattern defect of the present invention; and / the repair method is used to repair the defect shown in Figure 5 on the reticle. Schematic diagram of the scattered strip pattern; I Repair method for repairing the mask drawing No. Comparative description: The repair of the mask is shown in the Ministry of Economic Affairs Intellectual Property Bureau employee consumer cooperative printed mask opaque area transparent area defect repair area opaque area is not Transparency area defect repair area mask required pattern scatter pattern defect repair area width width opaque area opaque area defect repair area mask opaque area light transmission area defect repair area light transmission area scatter pattern This paper stuck repair area scale applicable Chinese National Standard (CNS) A4 size (210X 297 mm)
發明詳細說明 X3 寬度 經濟部智慧財產局員工消費合作社印製 隨著電子元件不斷朝 罩圖案也越顯細微，進而广小的趨勢發展’而使得光 密圖案間之近接效應的散條正單獨圖案及排列緻 案相當細小，;&易在光罩…。而且，由於散條圖 進行修補。習知係利用沈積有：程產生缺損’目此經常需 受損或散條圖轉落區，、’猶來修補光罩上不透光區 除過多的有機膜。習知這補機…刻步驟以去 易造成其他未受損的光罩區二=刻的修補方*’容 續微影製程I造成具有過 習知係利用有機膜來修補光罩上因不H的缺點。另外， 透光部分，此修補區域的材質”先=;損而暴露出 補區域容_，而用或清洗製程時’修 以修補光罩。 、 'u積有機瞑並再次蝕刻 補:二二發:::::種利來修 壬為了使本發明之敘述更知线+ t 並配合……照： ':與不透光區域’而透光區域則如數個透光區:8 所不。由於光罩的基材係由透光的玻璃絕緣材f，例如石 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐） .......·裝.........訂.........參 (請先閲讀背面之注意事項再填寫本頁) 554413 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 英所構成，且透光區48的主要功能係為透光，因此在材質 部/刀係利用光罩本身的基材材質即可。另外，光罩4〇之不 透光區域係利用塗佈不透光材料，例如鉻或氧化鉻，或者 相移層材料’例如鉬矽氧氮化物，於光罩之基材上，以形 成如第4圖中的不透光區42、不透光區44與不透光區46。 «月 > …、第4圖，在光罩40中的不透光區44與不透光區46 中分別具有缺陷50與缺陷52，此缺陷5〇與缺陷52係可 月b疋由於光罩不透光部分在形成時的對準誤差，或者係在 後續製程中因鉻膜剝落而造成不透光區44與不透光區Μ 的破彳貝’進而形成缺陷50與缺陷52的透光部分。 另外，請參照第5圖，第5圖所繪示為利用本發明之 光罩修補方法修補光罩上之缺落散條圖案的示意圖。光罩 80亦與一般光罩相同，同樣由透光區域與不透光區域所構 成。其中，透光區域由數個透光區82所組成，而不透光區 域則係由所需圖案84及其兩側之散條圖案86與散條圖案 8 8所、、且成。而且，光罩8 〇之基材同樣係由透光之玻璃絕 緣材質，例如石英，所構成，而光罩8 〇之不透光區域則同 樣係利用塗佈不透光材料，例如鉻或氧化鉻，或者相移層 材料’例如鉬矽氧氮化物，於光罩80之基材上，以形成所 需圖案84以及修正所需圖案84之近接效應的散條圖案86 與散條圖案8 8等不透光區。 由於，散條圖案8 6與散條圖案8 8係用以修正所需圖 案84之近接效應，所以散條圖案86與散條圖案88之尺寸 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) .......·裝.........訂.........Λ (請先閲讀背面之注意事項再填寫本頁) 554413 A7 B7 五 、發明説明（ 經 濟 部 智 慧 財 產 局 員 工 消 合 作 社 印 製 需小於所需圖案84之尺汁，，、，、抽々 ^ 88 II Bl ^ ^ ^， 、 避免散條圖案80與散條圖 案、，’曝先”，、員衫後而在光阻中產生圖安二 β。卩左芏接胁带 產生圖案’而影響元件之佈 局通者積體電路之關鍵尺寸 之圖案尺寸亦不斷缩減，而輔 微縮化，電路佈局中 斷縮減’而輔助用之散條的尺寸也因此而 減小。在政條圖案86與散條 …於光罩80之不透光…案88 “細微的情況下’ 不透先圖案在形成時的對準誤差，咬者 是由於在使用光罩8〇的、两和心 】平决產^ ^ 8〇的過私中因鉻膜掉落所造成不透光 之散條圖案88的缺指，而*血^ 仏风个边λ 缺知，而在散條圖案88中產生透光之缺 陷90與缺陷92，如篦$圖 _ 帛5圖所不。而散條圖案88的缺損， 會降低近接效應的修正教要， 果進而衫響所需圖案8 4的圖形 品質。 因此’請同時參昭第4阁命# c门 …、弟圖與第5圖，為修補第4圖之 缺陷5〇與缺陷52以及第5圖之缺陷90與缺陷92的不正 常透光。h纟毛明提供的修補方法係利用原有之光罩修 補機台，例如可提供聚焦離子束之光革修補機台，進行独 刻步驟來去除缺陷50、缺陷52、缺陷9〇、以及缺陷”之 表面部分的透光基材’ #以破壞透光基材之透光特性使缺 陷50、缺陷52、缺陷90、以及缺陷92部分之基材無法透 光。如此一來，可在缺陷5〇、缺陷52、缺陷9〇、以及缺 陷92等圖案缺落部分上分別形成修補區域6〇、修補區域 62、修補區域94、以及修補區域96，使缺陷5〇、缺陷52、 缺陷90、以及缺陷92中的不正常透光部分轉變為不透光 部分。 10 本紙張尺度適用中國國家標準(CNS)A4規格 (請先閱讀背面之注意事項再填寫本頁) 訂· 參 經濟部智慧財產局員工消費合作社印製 554413 、發明説明（） 程2發明之一特點即在利用原有光罩修補機台之姓刻製 、仃車父精密圖案的修補。由於控制 x 程軔批制a w u确機台之餘刻製 方便尤積製程來的容易，因此對修補精密圖案可較為 光罩ttr之較佳實施例中’係在能提供聚焦離子束之 ^ ? ’台巾’以聚焦離子束來蝕刻而破壞缺1¾ 5〇、缺 、：52、缺陷90、以及缺陷92之表面部分的透光基材，而 吏這二不正书透光之缺陷變成不透光的目的。在修補 之钱刻步驟中，可利用氣磨式，並採用例如漠或氧化氣當 作^應氣體，或者是以非氣磨式，來進行缺陷5〇、缺陷52: 缺陷90、以及缺陷92之表面部分的透光基材的蝕刻。此 外，進行蝕刻修補時，蝕刻之修補區域之寬度較佳是控制 在約為透光缺陷之寬度的1/2至2/3,如此一來，修補區域 所呈現的不透光面積，即可與缺陷造成的透光面積相等。 亦即，利用聚焦離子束來做為蝕刻修補時，第4圖之不透 光區44具有寬度Li，因此不透光區44之修補區域6〇應控 制在寬度Xl ’且此寬度Xl係等於寬度Li的1/2至2/3 ;而 不透光區46具有寬度L2 ,因此不透光區46之修補區域62 應控制在寬度X2,且此寬度Χ2係等於寬度L2的1/2至2/3。 同樣地’第5圖不透光之散條圖案88具有寬度L3，因此散 條圖案88之修補區域94的寬度與修補區域96的寬度皆應 控制在X3 ’且此寬度Xl係等於寬度L3的1/2至2/3。如此 一來，修補區域60所呈現的不透光區域即與缺陷50造成 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 、一t (請先閲讀背面之注意事項再填寫本頁} 554413Detailed description of the invention X3 Width Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. As electronic components continue to be more subtle, the pattern will become more and more subtle, and the trend of broader and smaller will develop. And the arrangement of the case is quite small; & easy to mask ... And, patching is performed due to the scatter chart. The conventional method is to use the deposition method to generate defects: “they often need to be damaged or the bar chart transition area,” and “the opaque area on the photomask to remove too much organic film. Knowing this repairing machine ... Carving steps to easily cause other undamaged photomask areas 2 = Carved repairing method * 'Continuous lithography process I caused a problem with the use of organic film to repair the photomask H disadvantages. In addition, in the light-transmitting part, the material of this repairing area is "first"; the repairing area is exposed, and the repairing mask is repaired when using or cleaning. Hair ::::: In order to make the description of the present invention more familiar with the line + t and cooperate ... Photo: ': and opaque area' and the light-transmitting area is like several light-transmitting areas: 8 As the base material of the photomask is made of transparent glass insulation material f, for example, the size of stone paper is applicable to China National Standard (CNS) A4 (210X297 mm). ... Order ......... (Please read the notes on the back before filling out this page) 554413 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention () And the main function of the light-transmitting area 48 is light-transmitting, so in the material part / knife system, it is sufficient to use the base material of the mask itself. In addition, the opaque area of the photo-mask 40 is coated with an opaque material. , Such as chromium or chromium oxide, or a material of the phase shift layer, such as molybdenum silicon oxynitride, on the substrate of the photomask to form the opaque area 42 and opaque as shown in FIG. 4 Light area 44 and opaque area 46. «Month > ..., Fig. 4, the light opaque area 44 and the opaque area 46 in the reticle 40 have a defect 50 and a defect 52, respectively, and this defect 50. The defect 52 may be caused by misalignment of the opaque part of the mask during the formation, or the opaque area 44 and the opaque area M caused by the peeling of the chromium film in the subsequent process. 'Furthermore, the light-transmitting portions of the defect 50 and the defect 52 are formed. In addition, please refer to FIG. 5, which is a schematic diagram of repairing the missing scattered strip pattern on the photomask using the photomask repair method of the present invention. The cover 80 is also the same as the general photomask, and is also composed of a light-transmitting area and an opaque area. Among them, the light-transmitting area is composed of a plurality of light-transmitting areas 82, and the non-light-transmitting area is composed of the required pattern 84 and The stripe pattern 86 on both sides is composed of the stripe pattern 88. Moreover, the substrate of the photomask 80 is also made of a transparent glass insulating material, such as quartz, and the photomask 80 is The opaque areas are also coated with an opaque material, such as chromium or chromium oxide, or a phase-shifting layer material such as Silicon oxynitride is formed on the substrate of the reticle 80 to form the desired pattern 84 and the opaque areas 86 and Scatter pattern 88 which modify the close effect of the desired pattern 84. The pattern 86 and the stripe pattern 88 are used to correct the close effect of the desired pattern 84. Therefore, the sizes of the stripe pattern 86 and the stripe pattern 88 are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). ....... · Install ......... Order ......... Λ (Please read the precautions on the back before filling this page) 554413 A7 B7 V. Description of the invention ( The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs should print less than the required pattern of 84,…, 88, and ^ ^ 88 II Bl ^ ^ ^, to avoid scattered patterns 80 and scattered patterns, 'exposed first' After the shirt, Tuan II β is generated in the photoresist.卩 Left 芏 is connected to the flank to produce a pattern ', which affects the layout of the component. The size of the pattern of the key circuit of the integrated circuit is also continuously reduced, and the auxiliary micro-miniaturization, the circuit layout is interrupted and reduced. While decreasing. In the rule pattern 86 and the scattered pattern ... the opacity of the reticle 80 ... case 88 "in small cases, the alignment error of the opaque pattern before it was formed was caused by the use of the reticle 80, Two harmony hearts] The lack of fingers of the opaque scattered strip pattern 88 caused by the falling of the chrome film in the overprivation of flat production ^ ^ 80, while the * blood ^ wind side λ is unknown, and the scattered strip The defect 90 and defect 92 in the pattern 88 generate light transmission, as shown in Figure _ 帛 帛 5. However, the defect of the scattered pattern 88 will reduce the correction instruction of the proximity effect. As a result, the desired pattern 8 4 Therefore, please refer to the 4th Pavilion #c gate ..., the figure and the 5th figure at the same time, in order to repair the defects 50 and 52 of the 4th figure and the defects 90 and 92 of the 5th figure. Normal light transmission. H 纟 Mao Ming's repair method uses the original mask repair machine, such as a light leather repair machine that can focus ion beam, and performs a single engraving step to remove defects 50, 52, and 9 〇, and the defect of the light-transmitting substrate of the surface portion '# In order to destroy the light-transmitting characteristics of the light-transmitting substrate, defect 50, defect 52, defect 90, and And the substrate of the defect 92 part cannot transmit light. In this way, the repair area 60, the repair area 62, the repair area 94, and the repair area 96 can be formed on the pattern missing portions such as the defect 50, the defect 52, the defect 90, and the defect 92, so that the defect 50 can be achieved. The abnormal light-transmitting portions among the defect 52, the defect 90, and the defect 92 are changed to the light-opaque portion. 10 This paper size applies to China National Standard (CNS) A4 specifications (please read the precautions on the back before filling out this page) The characteristic is to use the original photomask repair machine to carve the last name of the car to repair the precise pattern of the car. Since the control of the x-axis process can be easily performed and the integration process is easy, the repair process of the precision pattern can be better than the mask ttr in the preferred embodiment, which is capable of providing a focused ion beam ^? The 'scarf' uses a focused ion beam to etch and destroy the light-transmitting substrates on the surface portions of the defect 1¾ 50, defect 52, defect 90, and defect 92, and the defects of light transmission in these two untrue books become opaque. The purpose of light. In the repairing and money engraving step, an air-grinding method may be used, and for example, an inert gas or an oxidizing gas is used as a reactive gas, or a non-air-milling method is used to perform defects 50, defect 52: defect 90, and defect 92. Etching of the light-transmitting substrate on the surface portion. In addition, when performing etch repair, the width of the etched repair area is preferably controlled to about 1/2 to 2/3 of the width of the light transmission defect. In this way, the opaque area of the repair area It is equal to the light transmission area caused by the defect. That is, when a focused ion beam is used for etching repair, the opaque region 44 in FIG. 4 has a width Li, so the repair region 60 of the opaque region 44 should be controlled to a width X1 ′, and the width X1 is equal to The width Li is 1/2 to 2/3; the opaque area 46 has a width L2, so the repaired area 62 of the opaque area 46 should be controlled at the width X2, and this width X2 is equal to 1/2 to the width L2 2/3. Similarly, the opaque scattered strip pattern 88 in FIG. 5 has a width L3. Therefore, the width of the repaired region 94 and the repaired region 96 of the scattered pattern 88 should be controlled at X3 ', and the width X1 is equal to the width L3. 1/2 to 2/3. In this way, the opaque area presented by the repaired area 60 and the defect 50 cause the paper size to apply the Chinese National Standard (CNS) A4 specification (210X297 mm), one t (please read the precautions on the back before filling in this Page} 554413
五、發明説明（） 的透光面積相等，修補區域62所呈現的不透光區域即與缺 陷52造成的透光面積相等，修補區域94所呈現的不透光 區域即與缺陷90造成的透光面積相等，而修補區域96所 呈現的不透光區域則與缺陷92造成的透光面積相等。 本發明之光罩修補方法，可利用原有光罩修補機台中 的蝕刻製程，即達到修補精密光罩的目的，不僅簡單容易 且對關鍵尺寸具有極佳的控制能力。此外，運用本發明之 光罩修補方法，更可防止習知化學沈積有機膜後進行再次 ㈣步驟所造成光罩傷害的缺點，以及曰後重複使用或清 洗的過程，修補區域剝落而造成再次缺陷的缺點，進而可 提高‘製程可靠度與良率。 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已’並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾’均應包含在下述之申請專利範圍内。 (請先聞讀背面之注意事項再填寫本頁) 訂· Φ 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐)V. Description of the invention The transparent area of () is the same. The opaque area presented by the repair area 62 is equal to the light transmission area caused by the defect 52, and the opaque area presented by the repair area 94 is the same as the transmission area caused by defect 90. The light area is equal, and the opaque area presented by the repair area 96 is equal to the light transmission area caused by the defect 92. The photomask repair method of the present invention can use the etching process in the original photomask repair machine to achieve the purpose of repairing a precise photomask, which is not only simple and easy, but also has excellent control ability for key dimensions. In addition, by using the mask repair method of the present invention, it is possible to prevent the disadvantages of photomask damage caused by the conventional chemical deposition organic film and performing the re-step, and the process of repeated use or cleaning after the repair area peels off and causes another defect. The disadvantages can further improve the process reliability and yield. As understood by those familiar with this technology, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention, etc. "Effective changes or modifications" should be included in the scope of patent applications described below. (Please read the precautions on the back before filling out this page) Order · Φ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper size applies to China National Standard (CNS) A4 (210X297 mm)